JP4416448B2 - 化学的機械研磨およびパッドドレッシング方法 - Google Patents
化学的機械研磨およびパッドドレッシング方法 Download PDFInfo
- Publication number
- JP4416448B2 JP4416448B2 JP2003283956A JP2003283956A JP4416448B2 JP 4416448 B2 JP4416448 B2 JP 4416448B2 JP 2003283956 A JP2003283956 A JP 2003283956A JP 2003283956 A JP2003283956 A JP 2003283956A JP 4416448 B2 JP4416448 B2 JP 4416448B2
- Authority
- JP
- Japan
- Prior art keywords
- pad
- polishing
- dressing
- platen
- rpm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims description 100
- 238000000034 method Methods 0.000 title claims description 36
- 239000000126 substance Substances 0.000 title claims description 11
- 239000002002 slurry Substances 0.000 claims description 17
- 238000011066 ex-situ storage Methods 0.000 claims description 5
- 230000003750 conditioning effect Effects 0.000 description 14
- 238000011065 in-situ storage Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US40045702P | 2002-07-31 | 2002-07-31 | |
| US10/378,024 US7004822B2 (en) | 2002-07-31 | 2003-02-28 | Chemical mechanical polishing and pad dressing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004066450A JP2004066450A (ja) | 2004-03-04 |
| JP2004066450A5 JP2004066450A5 (enExample) | 2006-08-17 |
| JP4416448B2 true JP4416448B2 (ja) | 2010-02-17 |
Family
ID=31191050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003283956A Expired - Fee Related JP4416448B2 (ja) | 2002-07-31 | 2003-07-31 | 化学的機械研磨およびパッドドレッシング方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7004822B2 (enExample) |
| JP (1) | JP4416448B2 (enExample) |
| CN (1) | CN100526018C (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7105446B2 (en) * | 2003-09-04 | 2006-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for pre-conditioning CMP polishing pad |
| US7210988B2 (en) * | 2004-08-24 | 2007-05-01 | Applied Materials, Inc. | Method and apparatus for reduced wear polishing pad conditioning |
| JP2009500182A (ja) * | 2005-07-09 | 2009-01-08 | ティービーダブリュ インダストリーズ インク. | Cmpパッドコンディショニング用に改良されたエンドエフェクタアーム装置 |
| WO2007027486A2 (en) * | 2005-08-29 | 2007-03-08 | Applied Materials, Inc. | Method for conditioning a polishing pad |
| US20080020682A1 (en) * | 2006-07-21 | 2008-01-24 | Applied Materilas, Inc. | Method for conditioning a polishing pad |
| TW200720493A (en) * | 2005-10-31 | 2007-06-01 | Applied Materials Inc | Electrochemical method for ecmp polishing pad conditioning |
| US20070158207A1 (en) * | 2006-01-06 | 2007-07-12 | Applied Materials, Inc. | Methods for electrochemical processing with pre-biased cells |
| US20070227902A1 (en) * | 2006-03-29 | 2007-10-04 | Applied Materials, Inc. | Removal profile tuning by adjusting conditioning sweep profile on a conductive pad |
| US7846006B2 (en) * | 2006-06-30 | 2010-12-07 | Memc Electronic Materials, Inc. | Dressing a wafer polishing pad |
| US7846007B2 (en) * | 2006-06-30 | 2010-12-07 | Memc Electronic Materials, Inc. | System and method for dressing a wafer polishing pad |
| US8389099B1 (en) | 2007-06-01 | 2013-03-05 | Rubicon Technology, Inc. | Asymmetrical wafer configurations and method for creating the same |
| US8348720B1 (en) | 2007-06-19 | 2013-01-08 | Rubicon Technology, Inc. | Ultra-flat, high throughput wafer lapping process |
| CN101367200B (zh) * | 2007-08-14 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | 一种抛光垫修整头 |
| JP4577368B2 (ja) | 2008-01-30 | 2010-11-10 | ブラザー工業株式会社 | インクジェット記録装置 |
| KR101616595B1 (ko) * | 2009-06-04 | 2016-04-28 | 아사히 가라스 가부시키가이샤 | 판 형상체의 연마 방법 |
| JP5504901B2 (ja) * | 2010-01-13 | 2014-05-28 | 株式会社Sumco | 研磨パッドの形状修正方法 |
| CN102248486B (zh) * | 2011-07-25 | 2013-01-30 | 清华大学 | 抛光垫修整方法 |
| CN103381575A (zh) * | 2012-05-03 | 2013-11-06 | 旺宏电子股份有限公司 | 平坦化修正臂、应用其的平坦化系统及平坦化方法 |
| CN102909626B (zh) * | 2012-09-18 | 2015-02-25 | 陈政伟 | 平磨机 |
| US20140224766A1 (en) * | 2013-02-08 | 2014-08-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Groove Design for Retaining Ring |
| CN104416466A (zh) * | 2013-08-26 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 一种用于化学机械抛光工艺的抛光垫修整方法 |
| DE102015220090B4 (de) * | 2015-01-14 | 2021-02-18 | Siltronic Ag | Verfahren zum Abrichten von Poliertüchern |
| CN106141894A (zh) * | 2015-04-23 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | 研磨垫整理方法及研磨机台 |
| CN106312696A (zh) * | 2016-09-14 | 2017-01-11 | 天津华海清科机电科技有限公司 | 化学机械抛光方法和装置 |
| CN107914213B (zh) * | 2016-10-10 | 2020-06-05 | 中芯国际集成电路制造(上海)有限公司 | 一种化学机械研磨方法 |
| JP7023455B2 (ja) * | 2017-01-23 | 2022-02-22 | 不二越機械工業株式会社 | ワーク研磨方法およびワーク研磨装置 |
| US10857651B2 (en) * | 2017-11-20 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus of chemical mechanical polishing and operating method thereof |
| CN109015335A (zh) * | 2018-09-27 | 2018-12-18 | 德淮半导体有限公司 | 化学机械研磨装置及其工作方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5700180A (en) * | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
| US5782675A (en) * | 1996-10-21 | 1998-07-21 | Micron Technology, Inc. | Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers |
| TW383644U (en) * | 1999-03-23 | 2000-03-01 | Vanguard Int Semiconduct Corp | Dressing apparatus |
| US6306008B1 (en) * | 1999-08-31 | 2001-10-23 | Micron Technology, Inc. | Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization |
| JP2001191246A (ja) * | 2000-01-06 | 2001-07-17 | Nec Corp | 平面研磨装置および平面研磨方法 |
| US6632127B1 (en) * | 2001-03-07 | 2003-10-14 | Jerry W. Zimmer | Fixed abrasive planarization pad conditioner incorporating chemical vapor deposited polycrystalline diamond and method for making same |
-
2003
- 2003-02-28 US US10/378,024 patent/US7004822B2/en not_active Expired - Fee Related
- 2003-07-17 CN CNB031784534A patent/CN100526018C/zh not_active Expired - Fee Related
- 2003-07-31 JP JP2003283956A patent/JP4416448B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004066450A (ja) | 2004-03-04 |
| US7004822B2 (en) | 2006-02-28 |
| US20040023602A1 (en) | 2004-02-05 |
| CN100526018C (zh) | 2009-08-12 |
| CN1485180A (zh) | 2004-03-31 |
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