JP4414916B2 - Patrone type solid-state imaging device - Google Patents

Description

  The present invention relates to a cartridge type solid-state image pickup device that is attached to a silver salt film camera and picks up a digital image, and more particularly to a cartridge type solid-state image pickup device that can be attached to a silver salt film camera equipped with a focal plane shutter.

  FIG. 12 is a perspective view of a conventional cartridge type solid-state imaging device, which is disclosed in Patent Documents 1, 2, and 3 below. The cartridge type solid-state imaging device 1 includes a housing 2 having a shape in which a film having a predetermined length of about 10 cm is drawn out from a cartridge housing a silver salt film, and a conventional solid-state imaging is provided in a film corresponding portion 3 of the housing 2. The element 4 is attached, and an electronic circuit and a battery power source are housed in the cartridge corresponding part 5.

  Then, as shown in FIG. 13, the back cover 6 of the film camera 5 is opened, and the cartridge type solid-state imaging device 1 is mounted in the film camera 5 so that the solid-state imaging device 4 faces the lens 7. Close.

  When the release button 8 of the film camera 5 is pressed halfway and the S1 switch is turned on, the autofocus function and exposure function of the film camera 5 operate to determine the focus lens position, aperture opening amount, and shutter speed, and the release button. When the S2 switch is turned on by fully pressing 8, the shutter is released. As a result, the subject image picked up through the lens 7 is formed on the solid-state image sensor 4, and digital image data is taken from the solid-state image sensor 4 into a memory in the electronic circuit.

  FIG. 14 is a schematic cross-sectional view of a conventional solid-state imaging device mounted on a patrone type solid-state imaging device, and shows a cross-section corresponding to three pixels among the cross-section taken along the line aa in FIG.

  In the conventional solid-state imaging device 4, photodiodes 11R, 11G, and 11B are formed on the surface portion of the semiconductor substrate 10, and a charge transfer path 12 is formed between the photodiodes 11R, 11G, and 11B. A transfer electrode 13 is formed, and a light shielding film 14 having an opening above the light receiving surface of each of the photodiodes 11R, 11G, and 11B is laminated. A transparent insulating layer 15 is laminated on the light shielding film 14, a red (R) green (G) blue (B) color filter 16 is laminated thereon, and a microlens 17 is laminated thereon. .

  Further thereon, a protective cover glass 18, an optical low-pass filter 19, and an IR cut filter 20 are provided in an overlapping manner. The function of the cover glass 18 may be shared by the IR cut filter 20 and the optical low-pass filter 19.

  In the conventional solid-state imaging device 4, a photodiode 11R that detects red (R), a photodiode 11G that detects green (G), and a photodiode 11B that detects blue (B) are formed at different positions. Therefore, unless a spatial frequency component equal to or higher than the Nyquist frequency is cut, color moire or the like is noticeable in the captured image, so that the optical low-pass filter 19 is an essential component.

  The IR cut filter 20 cuts long-wavelength infrared region components from the light incident on the solid-state imaging device 4. The photodiodes 11R, 11G, and 11B that are provided on the semiconductor substrate 10 and constitute each pixel have higher sensitivity in the infrared region than the visible light of R, G, and B. Therefore, unnecessary visible light is cut by the color filter 16. However, since IR light cannot be cut, the IR cut filter 20 is an indispensable component for accurately detecting R, G, and B by color separation.

  In a normal digital camera, the IR cut filter 20 is provided in the lens system of the camera. However, since the cartridge type solid-state imaging device uses the lens system of the silver salt film camera not equipped with the IR cut filter as it is, It is necessary to provide an IR cut filter 20 on the front surface of the solid-state imaging device 4.

  The conventional solid-state imaging device 4 described above has been described by taking a CCD image sensor as an example. However, an optical low-pass filter and an IR cut filter are essential even in a CMOS image sensor.

JP-A-9-98326 JP 2000-184250 A JP 2003-234932 A

  An IR cut filter 20 and an optical low-pass filter 19 are indispensable for a conventional solid-state imaging device 4 mounted in a cartridge type solid-state imaging device. In addition, these thicknesses are considerably thick as 3 mm to 5 mm, which causes the thickness of the entire film portion 3 of the cartridge type solid-state imaging device to be increased.

  Some silver salt film cameras equipped with a patrone type solid-state imaging device are equipped with a focal plane shutter like a single-lens reflex camera. The focal plane shutter is disposed immediately before the film, and has a structure in which the front curtain and the rear curtain travel immediately before the film.

  Therefore, if the film-corresponding portion of the cartridge type solid-state image pickup device, that is, the film portion 3 on which the solid-state image pickup device is mounted is thick, the cartridge type solid-state image pickup device cannot even be mounted on a silver salt film camera equipped with a focal plane shutter. A digital image cannot be captured using a single-lens reflex type silver salt film camera.

  Further, in the case of a camera whose lens can be exchanged, such as a single-lens reflex camera, the exit pupil position changes for each lens to be exchanged, and the exit pupil distance is shortened particularly when the lens is exchanged for a short focal length lens. The microlens 17 shown in FIG. 14 stacked on the surface portion of the solid-state imaging device is appropriately designed for shading with respect to a limited exit pupil distance. Therefore, when the exit pupil position is changed by changing the lens, the shading is performed. There is also a problem that occurs.

  However, in the conventional solid-state imaging device, the light receiving surface area of the photodiodes 11R, 11G, and 11B is reduced because a signal readout circuit such as a charge transfer path and a MOS transistor circuit is provided on the surface of the semiconductor substrate. If 17 is not provided, there is a problem that the light utilization efficiency is lowered.

  An object of the present invention is to install a thin color solid-state image sensor that can be mounted on a film camera equipped with a focal plane shutter, and a cartridge type equipped with a color solid-state image sensor that suppresses the occurrence of shading even if the lens is replaced. The object is to provide a solid-state imaging device.

  The cartridge type solid-state image pickup device of the present invention includes a housing having a shape in which a film is drawn out from the cartridge for a predetermined length, and a solid-state image sensor is mounted at a position corresponding to the film, and the solid-state image pickup at a position corresponding to the cartridge. In a cartridge type solid-state imaging device configured to house an electronic circuit that drives an element and processes data read from the solid-state imaging element and a battery power source and shoots a digital image by mounting the film camera instead of a film, A photoelectric conversion film stacked color solid-state imaging device in which at least one photoelectric conversion film for photoelectrically converting green light is stacked on an upper layer of a semiconductor substrate is mounted at a position corresponding to the film.

  The photoelectric conversion film laminated color solid-state imaging device of the cartridge type solid-state imaging device of the present invention is configured such that a photoelectric conversion film for photoelectric conversion of red light and a photoelectric conversion film for photoelectric conversion of blue light are further stacked on the upper layer of the semiconductor substrate. It is characterized by being.

  A first photodiode that receives blue light and performs photoelectric conversion and a second photodiode that receives red light and performs photoelectric conversion are formed on the semiconductor substrate of the cartridge type solid-state imaging device of the present invention. It is characterized by.

  In the cartridge type solid-state imaging device of the present invention, the first photodiode and the second photodiode are stacked in the depth direction of the semiconductor substrate.

  In the cartridge type solid-state imaging device of the present invention, an infrared cut filter layer is integrally formed on the solid-state imaging device from the photoelectric conversion film laminated type.

  According to the present invention, since a plurality of color signals are detected by one pixel, an optical low-pass filter is not required, and the thickness can be reduced accordingly. In addition, since the light receiving area is widened because the photoelectric conversion film receives light, and it is not necessary to mount a microlens, the occurrence of shading is suppressed even if the lens of the film camera is replaced.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is an explanatory diagram of a silver salt film camera equipped with a cartridge type solid-state imaging device according to the first embodiment of the present invention. The cartridge type solid-state imaging device 30 according to the present embodiment is mounted with the back cover 32 opened in the film camera 31 as in FIG. 13, but in this embodiment, a release button 33 of the film camera 31 is further provided. A camera attachment 35 is provided that can be detachably fitted to the part. The camera attachment 35 is provided with a button 36 that covers the release button 33 and can be pressed together with the release button 33.

  FIG. 2 is a diagram illustrating an internal circuit of the camera attachment 35. The camera attachment 35 includes a touch sensor 37 that senses that the user's finger has touched the button 36, and an oscillation circuit (wireless) that oscillates at a predetermined frequency when the touch sensor 37 senses that the button 36 is touched. Transmission means) 38, an antenna 39 for outputting the output of the oscillation circuit 38 by radio, and a button battery 40 for supplying power to the oscillation circuit 38 and the touch sensor 37.

  FIG. 3 is a front perspective view of the cartridge type solid-state imaging device 30 according to the present embodiment. The film-corresponding portion 42 of the casing 41 of the cartridge-type solid-state imaging device 30 is attached with a photoelectric conversion film laminated color solid-state imaging device 43, which will be described in detail later, and the cartridge-corresponding portion 44 has a replaceable battery power source. 45 and an electronic circuit 46 are accommodated.

  4 is a rear perspective view of the cartridge type solid-state imaging device 30 shown in FIG. A push button 50 for turning on the power and an antenna 51 are provided at predetermined positions on the back surface of the cartridge type solid-state imaging device 30. When the film camera 31 is provided with a film confirmation window, the predetermined position is preferably a position facing the window. When the push button 50 is pressed and the push button 50 emits light, the predetermined position is removed from the window. It can be easily confirmed.

  FIG. 5 is a functional block diagram of the cartridge type solid-state imaging device 30 shown in FIGS. 3 and 4 (including the functional configuration of the electronic circuit 46 shown in FIG. 3). The cartridge type solid-state imaging device 30 of this embodiment includes a CPU 53 that controls the entire cartridge type solid-state imaging device 30 and an imaging element driving unit that controls the driving of the solid-state imaging element 43 according to instructions from the CPU (control unit) 53. 55, an analog signal processing unit 56 that takes in the output data of the solid-state imaging device 43 and performs signal processing according to an instruction from the CPU 53, and an A / D converter that converts image data output from the analog signal processing unit 56 into digital data 57.

  The electrical control system of the cartridge type solid-state imaging device 30 takes in digital image data output from the memory control unit 62 connected to the frame memory 61 and the A / D converter 57, and performs gamma correction, RGB / YC conversion, and the like. A digital signal processing unit 63 that performs the image processing, a compression / decompression processing unit 64 that compresses the captured image into a JPEG image or expands the compressed image, and integration that integrates the captured image data to adjust the gain of white balance. Unit 65, a recording medium 66 for storing captured image data such as JPEG image data, a memory control unit 67 for controlling the recording medium 66, and a wireless interface 68 connected to the antenna 51 for wireless communication with the outside. , A control bus 69 and a data bus 70 are provided for interconnecting them.

  The power supply circuit 71 of the cartridge type solid-state imaging device 30 uses the battery 45 shown in FIG. 3 as a power source, supplies power to the CPU 53 and the wireless interface 68 via the open / close switch 71a, and also uses the battery type solid-state image pickup via the open / close switch 71b. Power is supplied to each processing unit (excluding the CPU 53 and the wireless interface 68) constituting the apparatus 30.

  The switch 71a is closed when the push button switch 50 shown in FIG. 4 is pressed by the user, and power is supplied to the CPU 53 and the wireless interface 68. The switch 71b is controlled to open and close by a power-on command from the CPU 53.

  Next, the operation of the cartridge type solid-state imaging device 30 having the above-described configuration will be described with reference to the flowchart showing the power supply control processing procedure of FIG.

  When the user installs the cartridge type solid-state image pickup device 30 in the film camera 31 of FIG. 1 in order to use the cartridge type solid-state image pickup device 30, the user pushes the push button 50 and then attaches it. As a result, the open / close switch 71a of FIG. 5 is closed, and power is supplied only to the CPU 53 and the wireless interface 68. That is, the power supply control program of FIG. 6 is activated under the power saving mode. Then, the user fits and attaches the camera attachment 35 to the release button 33 portion of the film camera 31.

  When the user touches the button 36 to capture a digital image, the touch sensor 37 senses this, and a radio signal indicating “touched” is transmitted from the antenna 39 of the attachment 35. The CPU 53 in FIG. 5 waits for reception of a “touched” signal in step S1 of FIG. 6. When the CPU 53 receives a “touched” signal from the antenna 51 via the wireless interface 68, the process proceeds to step S2. Then, the switch 71b shown in FIG. 5 is closed. Thereby, all the functions of the cartridge type solid-state imaging device 30 become operable.

  Thereafter, the user performs a digital image capturing operation, and this image capturing operation is performed regardless of the processing in FIG. The imaging operation is performed in the same manner as with a normal film camera. That is, when the user half-presses the button 36, the S1 switch of the release button 33 below it is turned on. As a result, the autofocus function, exposure function, etc. of the film camera 11 are operated to adjust the focus lens position and control the aperture opening amount. The shutter speed is determined.

  When the user fully presses the button 36, the S2 switch of the release button 33 below it is turned on, and the shutter of the film camera 31 is cut at the above shutter speed. That is, if the camera has a focal plane shutter, the front and rear curtains of the focal plane shutter travel, and if the camera has a lens shutter, the lens shutter is opened and closed. Of course, it is also possible to manually operate control of shutter speed and aperture opening, focus adjustment, and the like.

  As a result, a subject image is formed on the light receiving surface of the solid-state image sensor 43, and the captured image data is read from the solid-state image sensor 43 in the same manner as a normal digital camera and stored in the recording medium 66.

  The power supply control program shown in FIG. 6 waits until the “touched” signal from the attachment 35 cannot be received even when the digital image is being captured (step S3), and the “touched” signal cannot be received. If YES in step S4, the flow advances to step S4 to open the switch 71b. As a result, the power saving mode is entered again, and power is supplied only to the CPU 53 and the wireless interface 68, and consumption of the battery 45 is suppressed.

  In the embodiment shown in FIG. 6, the switch 71b is opened immediately when the user releases the finger from the button 36, and the switch 71b is closed when the user contacts the finger. However, the contact and separation of the finger are detected. In order to avoid turning the power on and off each time, a soft timer or the like may be provided so that the power is kept on for a predetermined time, for example, one minute after the finger is released.

  Next, the thin-film photoelectric conversion film stacked type-solid-state imaging element 43 mounted on the cartridge type solid-state imaging device 30 of the present embodiment will be described. The color solid-state imaging device 43 used in this embodiment has a configuration that does not require the optical low-pass filter 19 shown in FIG. That is, it is configured to detect signals of three colors of R, G, and B with one pixel. Further, the IR cut filter is not provided separately from the solid-state image sensor 43 but is integrally formed in the solid-state image sensor 43 as one layer constituting the color solid-state image sensor 43. Hereinafter, the configuration of the solid-state imaging device 43 of the present embodiment will be described in detail.

  FIG. 7 is a schematic cross-sectional view of a unit cell of the photoelectric conversion film stacked color solid-state imaging device 43. One solid-state image sensor 43 is formed by two-dimensionally arranging the structure shown in FIG. 7 vertically and horizontally.

  An n-type semiconductor layer 102 is formed in a deep portion of the surface of the pixel portion position 101 of the p-type semiconductor substrate 100, and a p-type semiconductor layer 103 is formed thereon. As a result, the pn junction formed between the semiconductor layer 103 and the semiconductor layer 102 constitutes the first photodiode, and the pn junction formed between the semiconductor layer 102 and the semiconductor substrate 100 is the second photo diode. Configure a diode.

  In the present embodiment, the wavelength dependence of the light absorption coefficient of silicon is used, for example, as in the solid-state imaging device shown in FIG. 5 of Japanese Patent Application Laid-Open No. 2003-332551, and according to the amount of incident light of a short wavelength (blue light). The signal charge generated in this way is detected by the shallow first photodiode, and the signal charge generated in accordance with the incident light quantity of the long wavelength (red light) is detected by the deep second photodiode.

  A charge transfer path 104 is formed on the surface of the semiconductor substrate 100 adjacent to the pixel portion position 101, and a transfer electrode 105 is formed on the charge transfer path 104. When the readout pulse is applied to the transfer electrode 105, the signal charges accumulated in the first and second photodiodes are separately read out to the charge transfer path 104, and the transfer pulse is applied to the transfer electrode 105. When transferred separately along the charge transfer path 104.

  A signal charge storage region 106 for a green (G) signal is formed at an appropriate position slightly away from the pixel portion position 101 on the surface of the semiconductor substrate 100, and between the signal charge storage region 106 and the pixel portion position 101. A charge transfer path 107 is formed, and a transfer electrode 108 is formed on the charge transfer path 107.

  When a read pulse is applied to the transfer electrode 108, the signal charge stored in the signal charge storage region 106 is read to the charge transfer path 107, and when a transfer pulse is applied to the transfer electrode 108, the signal charge is stored in the charge transfer path 107. Transferred along.

  A light shielding film 109 is laminated on the surface of the semiconductor substrate 100. The light shielding film 109 has an opening 109 a provided above the light receiving surfaces of the first and second photodiodes and an opening 109 b provided above the signal charge storage region 106. The light shielding film 109 is embedded in a transparent insulating layer 110 such as a silicon oxide film, and a transparent pixel electrode film 111 is laminated on the insulating layer 110 separately from the pixel electrode film of an adjacent pixel. The pixel electrode film 111 is made of, for example, ITO or the like, and the pixel electrode film 111 and the signal charge storage region 106 are electrically connected through a vertical wiring 112 such as a tungsten plug through the opening 109b.

  On the pixel electrode film 111, a photoelectric conversion film 113 is stacked in a single configuration common to each pixel. The photoelectric conversion film 113 is made of a material that receives light in an intermediate wavelength range, that is, a green (G) wavelength range, and generates a photoelectric charge corresponding to the amount of incident green light. For example, an organic semiconductor is used, an Alq or quinacridone compound is used, or nanosilicon having an optimum particle size is laminated. FIGS. 8A and 8B show chemical formulas of Alq and a quinacridone compound, respectively.

  On the photoelectric conversion film 113, a transparent common electrode film 114 made of ITO or the like having a single structure common to each pixel is laminated, and a filter layer 115 is laminated thereon. Further, a protective layer may be provided thereon.

  In the present embodiment, the filter layer 115 is capable of absorbing or reflecting at least ultraviolet light having a wavelength of 400 nm or less, and preferably has an absorption factor of 50% or more in a wavelength region of 400 nm or less. Further, the filter layer 115 can absorb or reflect infrared rays of at least 700 nm or more, and preferably has an absorptance of 50% or more in a wavelength region of 700 nm or more.

  The filter layer 115 that performs ultraviolet absorption and infrared absorption can be formed by a conventionally known method. For example, a method for forming a colored layer by providing a mordant layer made of a hydrophilic polymer material such as gelatin, casein, mulled or polyvinyl alcohol on a substrate and adding or dyeing a dye having a desired absorption wavelength to the mordant layer It has been known. Furthermore, a method using a colored resin in which a certain kind of coloring material is dispersed in a transparent resin is known. For example, JP-A-58-46325, JP-A-60-78401, JP-A-60-184202, JP-A-60-184203, JP-A-60-184204, JP-A-60-184204 As shown in Japanese Patent Application Laid-Open No. 60-184205 and the like, a colored resin film obtained by mixing a colorant with a polyamino resin can be used. A colorant using a polyimide resin having photosensitivity is also possible.

  Dispersing a coloring material in an aromatic polyamide resin having a photosensitivity group described in Japanese Patent Publication No. 7-113685 in the molecule and capable of obtaining a cured film at 200 ° C. or lower; It is also possible to use the pigment described in JP-A-7-69486 for a dispersion colored resin.

  In the present embodiment, a dielectric multilayer film may be used as the filter layer 115. The dielectric multilayer film is preferable because the wavelength dependency of light transmission is sharp.

  In manufacturing, when the filter layer 115 and the photoelectric conversion film 113 are separated from each other by an insulating layer, the filter layer 115 and the photoelectric conversion film 113 are preferably separated from the insulating layer. The insulating layer can be formed using a transparent insulating material such as glass, polyethylene, polyethylene terephthalate, polyethersulfone, and polypropylene. Silicon nitride, silicon oxide and the like are also preferably used. Silicon nitride formed by plasma CVD is preferable because it has high density and good transparency.

  When a protective layer or a sealing layer is provided for the purpose of preventing contact with oxygen, moisture, etc., the protective layer includes a diamond thin film, an inorganic material film such as a metal oxide or metal nitride, a fluororesin, a polyparaffin. Examples thereof include polymer films such as xylene, polyethylene, silicon resin, and polystyrene resin, and photocurable resins. Alternatively, the element portion may be covered with glass, gas-impermeable plastic, metal, etc., and the element itself may be packaged with an appropriate sealing resin. In this case, a substance having high water absorption can be present in the packaging.

  When light from the subject enters the solid-state imaging device 43 having such a configuration, infrared rays and ultraviolet rays are cut by the filter layer 115, and visible light enters the inside. Green (G) light in the visible light is absorbed by the photoelectric conversion film 113, and a photoelectric charge corresponding to the amount of incident green (G) light is generated in the photoelectric conversion film 113. When a bias voltage is applied between the common electrode film 114 and the pixel electrode film 111, this photocharge quickly moves to the signal charge storage region 106 through the vertical wiring 112.

  Of the incident light, blue (B) light and red (R) light enter the opening 109 a of the light shielding film 109 and enter the semiconductor substrate 100. Blue light having a short wavelength is absorbed mainly in the shallow part of the semiconductor substrate 100 to generate a photocharge. This photoelectric charge is accumulated in the first photodiode. Red light having a long wavelength mainly reaches the deep part of the semiconductor substrate 100 and generates photocharges. This photoelectric charge is accumulated in the second photodiode.

  The signal charge corresponding to the green (G) light stored in the signal charge storage region 106, the signal charge corresponding to the blue (B) light stored in the first photodiode, and the red stored in the second photodiode. (R) The signal charges corresponding to the light are respectively read out to the charge transfer path, transferred, and output from the solid-state image sensor 43.

  As described above, in the solid-state imaging device 43 according to the present embodiment, signal charges of three colors of R, G, and b can be obtained from one pixel, so that color moire or the like occurs without using an optical low-pass filter. There is nothing to do. For this reason, the thickness can be reduced by an amount corresponding to the optical low-pass filter. Further, since the filter layer 115 and the protective film are integrally laminated, there is no need to provide an infrared cut filter and a protective cover glass, and the thickness is reduced accordingly.

  As a result, even if the solid-state imaging device 43 is mounted on the cartridge type solid-state imaging device, the film portion 42 is thin, so that it can be mounted on a silver film camera mounted with a focal plane shutter. Further, since the light receiving surface of the photoelectric conversion film 113 that receives green light used as a luminance signal is wide, a microlens is unnecessary, and even if the lens is replaced and the exit pupil position changes, the occurrence of shading is suppressed.

  In the embodiment shown in FIG. 7, the solid-state imaging device in which the signal readout circuit is configured by a charge transfer path has been described as an example. However, the signal readout circuit is not a charge transfer path but is a MOS transistor as in the CMOS image sensor. Needless to say, it may be configured.

(Second Embodiment)
FIG. 9 is a schematic cross-sectional view of a unit cell of a photoelectric conversion film stacked color solid-state imaging device according to the second embodiment of the present invention. Since the configuration is almost the same as that of the first embodiment, the same components are denoted by the same reference numerals, description thereof is omitted, and only different portions will be described.

  In the first embodiment, the filter layer 115 is provided on the upper layer portion of the solid-state imaging device to cut infrared rays. However, in this embodiment, the infrared rays are placed in the openings 109 a of the light shielding film 109 instead of the filter layer 115. The difference is that a cut filter layer 116 is provided. Unlike the filter layer 115, the infrared cut filter layer 116 cuts only infrared rays.

  Also in the present embodiment, as in the first embodiment, the optical low-pass filter and the infrared cut filter are not necessary, so that the thickness of the solid-state imaging device can be reduced.

(Third embodiment)
FIG. 10 is a schematic cross-sectional view of a unit cell of a photoelectric conversion film stacked color solid-state imaging device according to the third embodiment of the present invention. In the first and second embodiments, only one layer of the photoelectric conversion film is stacked on the semiconductor substrate 100, and two layers of photodiodes are provided on the semiconductor substrate to detect three colors in the same pixel. In this embodiment, a blue detection photoelectric conversion film 201, a green detection photoelectric conversion film 202, and a red detection photoelectric conversion film 203 are stacked on a semiconductor substrate 200. .

  In the solid-state imaging device of the present embodiment, a p-well layer 205 is formed on the surface portion of the n-type semiconductor substrate 200, and a red charge accumulation portion 206, a green charge accumulation portion 207, and a blue charge accumulation portion 208 are formed on the surface portion. Are formed, charge transfer paths 209 are formed between the charge storage portions 206, 207, and 208, transfer electrodes 210 are formed on the charge transfer paths 209, and light shielding is performed on the transfer electrodes 210. A film 211 is stacked.

  Each of the photoelectric conversion films 201, 202, and 203 includes transparent pixel electrode films 212, 213, and 214 that are divided for each pixel, and transparent common electrode films 215, 216, and 217 that are common to each pixel. These are sandwiched by transparent insulating layers 218, 219, and 220. The pixel electrode film 212 and the blue charge storage unit 208 are connected by the vertical wiring 221, the pixel electrode film 213 and the green charge storage unit 207 are connected by the vertical wiring 222, and the pixel electrode film 214 and the red charge storage unit 206 are connected. Are connected by a vertical wiring 223. Note that an ultraviolet cut filter layer is preferably provided on the uppermost common electrode film 215.

  When light is incident on the solid-state imaging device of the present embodiment, blue light in the incident light is absorbed by the photoelectric conversion film 201 to generate photocharge, and this photocharge is accumulated in the blue charge accumulation unit 208. Of the light transmitted through the photoelectric conversion film 201, green light is absorbed by the photoelectric conversion film 202 to generate photocharge, and this photocharge is accumulated in the green charge accumulation unit 207. Of the light transmitted through the photoelectric conversion film 202, red light is absorbed by the photoelectric conversion film 203 to generate a photocharge, and this photocharge is stored in the red charge storage unit 206. The signal charges stored in the charge storage units 206, 207, and 208 are read out to the adjacent charge transfer path 209, transferred, and output from the solid-state imaging device.

  Infrared light contained in the incident light is not absorbed by any of the photoelectric conversion films 201, 202, and 203 and reaches the surface of the semiconductor substrate 100, but is blocked by the light shielding film 211.

  The solid-state imaging device of the present embodiment has a thicker photoelectric conversion film than the solid-state imaging devices of the first and second embodiments, so the thickness is increased by that amount, but the order is about 1 μm. Since the semiconductor substrate 200 is thinner than the thickness of about 0.5 mm, the present embodiment can provide the same effects as those of the first and second embodiments.

  In the solid-state imaging device of this embodiment, the signal readout circuit using the charge transfer path is formed on the surface of the semiconductor substrate. However, it goes without saying that the signal readout circuit may be configured by a MOS transistor.

(Fourth embodiment)
FIG. 11 is a schematic cross-sectional view of 1.5 unit cells of a photoelectric conversion film stacked color solid-state imaging device according to the fourth embodiment of the present invention. In the unit cell of this embodiment, unit cells for detecting green (G) and blue (B) and unit cells for detecting green (G) and red (R) are alternately provided in the vertical direction and the horizontal direction. This is different from the first embodiment. Other components in FIG. 11 are the same as those in the first embodiment, and thus the same members are denoted by the same reference numerals and description thereof is omitted.

  In the first embodiment shown in FIG. 7 described above, two layers of photodiodes are provided on the semiconductor substrate to separate both blue (B) and red (R) using the wavelength dependence of the light absorption coefficient of silicon. In this embodiment, only one layer of the photodiode 301 is provided on the surface portion of the semiconductor substrate 300. In a certain unit cell, a blue color filter 302 is stacked on the photodiode 301 to detect a blue signal, A red color filter 303 is stacked on the photodiode 301 of the adjacent unit cell to detect a red signal.

  In the solid-state imaging device of the present embodiment, two colors are detected by one pixel, and signals detected by surrounding pixels are obtained for the remaining one color by interpolation calculation. Although it is configured to detect two colors with one pixel, the color moire can be reduced by performing an interpolation calculation so that the sample points of the pixels generated by the interpolation calculation are substantially the same as the sample points of the other two color pixels. Since no optical low-pass filter is required because it does not occur, the solid-state imaging device can be made thin, and the same effect as in the first to third embodiments can be obtained.

  Since the cartridge type solid-state imaging device 30 of each embodiment described above does not require any modification on the film camera 31 side, when the film camera 31 is used as a silver salt film camera, the cartridge type solid-state imaging device 30 is simply used. It can be used as a film camera simply by removing it from the camera 31 and mounting a silver salt film instead.

  That is, the patrone type solid-state imaging device according to each embodiment of the present invention can use an expensive and high-performance lens and a robust camera body of an existing film camera as they are, and the manufacturing technology of the solid-state imaging device has advanced. If the number of pixels in a solid-state image sensor further increases, users can enjoy the benefits of technological advances at low cost simply by replacing the patrone type solid-state image sensor equipped with the new solid-state image sensor with a film. It becomes possible.

  Since the patrone type solid-state imaging device according to the present invention can use the lens and the camera body without any modification of the existing film camera, it is useful as a camera to replace the existing digital camera with a lens.

1 is a rear perspective view of a film camera equipped with a cartridge type solid-state imaging device according to a first embodiment of the present invention. FIG. 2 is a configuration circuit diagram of the camera attachment shown in FIG. 1 is a front perspective view of a cartridge type solid-state imaging device according to a first embodiment of the present invention. FIG. 4 is a rear perspective view of the cartridge type solid-state imaging device shown in FIG. 3. It is a functional block diagram of a cartridge type solid-state imaging device concerning one embodiment of the present invention. It is a flowchart which shows the process sequence of the power supply control program which CPU shown in FIG. 5 performs. It is a cross-sectional schematic diagram of the unit cell of the solid-state imaging device mounted on the cartridge type solid-state imaging device according to the first embodiment of the present invention. It is a figure which illustrates the chemical formula of Alq (a) which is an example of the material which comprises the photoelectric converting film shown in FIG. 7, and a quinacridone compound (b). It is a cross-sectional schematic diagram of the unit cell of the solid-state image sensor which concerns on the 2nd Embodiment of this invention. It is a cross-sectional schematic diagram of the unit cell of the solid-state image sensor which concerns on the 3rd Embodiment of this invention. It is a cross-sectional schematic diagram for 1.5 unit cells of the solid-state imaging device according to the fourth embodiment of the present invention. It is a perspective view of a cartridge type solid-state imaging device. It is a perspective view of a film camera equipped with a cartridge type solid-state imaging device. It is a cross-sectional schematic diagram for three pixels of a conventional solid-state imaging device mounted on a conventional cartridge type solid-state imaging device.

Explanation of symbols

30 Patrone type solid-state imaging device 31 Film camera 36 Button 43 Solid-state imaging device 100, 200, 300 Semiconductor substrate 111, 212, 213, 214 Pixel electrode film 112, 221, 222, 223 Vertical wiring 113, 201, 202, 203 Photoelectric conversion Film 114, 215, 216, 217 Common electrode film

Claims (5)

  A housing having a shape in which a film is drawn out from the cartridge by a predetermined length is provided, a solid-state image sensor is mounted at a position corresponding to the film, the solid-state image sensor is driven to a position corresponding to the cartridge, and the solid-state image sensor is In a patrone type solid-state imaging device configured to house an electronic circuit for processing read data and a battery power source and mounted on a film camera instead of film to take a digital image, a photoelectric conversion film for photoelectrically converting green light A cartridge type solid-state imaging device, wherein a photoelectric conversion film laminated color solid-state imaging device laminated at least one layer on an upper layer of a semiconductor substrate is mounted at a location corresponding to the film.   The photoelectric conversion film stacked color solid-state imaging device is characterized in that a photoelectric conversion film for photoelectric conversion of red light and a photoelectric conversion film for photoelectric conversion of blue light are further stacked on an upper layer of the semiconductor substrate. Item 4. The cartridge type solid-state imaging device according to Item 1.   2. The semiconductor substrate according to claim 1, wherein a first photodiode that receives blue light and performs photoelectric conversion and a second photodiode that receives red light and performs photoelectric conversion are formed. Patrone type solid-state imaging device.   4. The cartridge type solid-state imaging device according to claim 3, wherein the first photodiode and the second photodiode are stacked in a depth direction of the semiconductor substrate. 5.   5. The cartridge type solid-state imaging device according to claim 1, wherein an infrared cut filter layer is formed integrally with the solid-state imaging device.

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