JP4413828B2 - Photomask blank, photomask, and manufacturing method thereof - Google Patents

Photomask blank, photomask, and manufacturing method thereof Download PDF

Info

Publication number
JP4413828B2
JP4413828B2 JP2005220587A JP2005220587A JP4413828B2 JP 4413828 B2 JP4413828 B2 JP 4413828B2 JP 2005220587 A JP2005220587 A JP 2005220587A JP 2005220587 A JP2005220587 A JP 2005220587A JP 4413828 B2 JP4413828 B2 JP 4413828B2
Authority
JP
Japan
Prior art keywords
light
shielding film
film
photomask blank
nm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2005220587A
Other languages
Japanese (ja)
Other versions
JP2006146152A (en
Inventor
崇 原口
博樹 吉川
智 岡崎
政秀 岩片
良紀 木名瀬
祐一 福島
判臣 稲月
Original Assignee
信越化学工業株式会社
凸版印刷株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2004308430 priority Critical
Application filed by 信越化学工業株式会社, 凸版印刷株式会社 filed Critical 信越化学工業株式会社
Priority to JP2005220587A priority patent/JP4413828B2/en
Priority claimed from TW94131545A external-priority patent/TWI375114B/en
Publication of JP2006146152A publication Critical patent/JP2006146152A/en
Application granted granted Critical
Publication of JP4413828B2 publication Critical patent/JP4413828B2/en
Application status is Active legal-status Critical
Anticipated expiration legal-status Critical

Links

Description

  The present invention relates to a photomask technique used for microfabrication of semiconductor integrated circuits, CCDs (charge coupled devices), color filters for LCDs (liquid crystal display devices), and magnetic heads.

  In recent years, advanced semiconductor microfabrication technology has become an extremely important elemental technology in order to meet the demand for circuit pattern miniaturization accompanying the high integration of large-scale integrated circuits. For example, high integration of a large scale integrated circuit requires a thinning technique for a wiring pattern constituting a circuit and a miniaturization technique for a contact hole pattern for wiring between layers constituting a cell. The reason why pattern miniaturization of large-scale integrated circuits is accelerated is because of its high-speed operation and low power consumption, and the most effective method is that of pattern miniaturization.

  Since most of such advanced microfabrication is performed by a photolithography technique using a photomask, the photomask is a basic technique that supports the miniaturization technique together with the exposure apparatus and the resist material. For this reason, technological development for forming a finer and more accurate pattern on the photomask blank is underway for the purpose of realizing a photomask having the above-described thinned wiring pattern and miniaturized contact hole pattern. Has been.

  In order to form a highly accurate photomask pattern on a photomask substrate, it is premised that a resist pattern formed on a photomask blank is patterned with high accuracy. Since photolithography when microfabricating a semiconductor substrate is performed by a reduction projection method, the size of the pattern formed on the photomask is about four times the size of the pattern formed on the semiconductor substrate. This does not mean that the accuracy of the pattern formed on the photomask is relaxed, but rather it is required to form the photomask pattern with higher accuracy than the pattern accuracy obtained on the semiconductor substrate after exposure.

  At present, the size of a circuit pattern drawn on a semiconductor substrate by photolithography has become much smaller than the wavelength of exposure light, so a photomask pattern is formed by enlarging the circuit pattern four times as it is. When reduced exposure is performed using the photomask formed, the shape according to the photomask pattern cannot be transferred to the resist film due to the influence of exposure light interference or the like.

  Therefore, as a super-resolution mask, so-called optical proximity effect correction (OPC) is applied to the OPC mask, which uses optical proximity effect correction technology that degrades the transfer characteristics, and the phase of adjacent aperture patterns. Is normally used as a phase shift mask in which the light amplitude in the middle of adjacent aperture patterns is made zero by changing the angle 180 °. For example, it is necessary to form an OPC pattern (hammer head, assist bar, etc.) having a size of 1/2 or less of the circuit pattern on the OPC mask.

  Thus, not only photolithography for obtaining a circuit pattern on a semiconductor substrate but also photolithography for forming a pattern on a photomask blank requires a high-precision patterning technique. One of the indices of photolithography performance is “limit resolution”, but photolithography in the photomask patterning process has a high limit resolution equivalent to or higher than photolithography in the circuit patterning process on a semiconductor substrate. It will be required.

  By the way, in order to form a photomask pattern, usually, a photoresist film is formed on a photomask blank provided with a light-shielding layer on a transparent substrate, and this photoresist film is irradiated with an electron beam to draw a pattern. And developing the photoresist film to obtain a resist pattern. Then, using the resist pattern as an etching mask for the light shielding layer, the light shielding layer is patterned to obtain a photomask pattern. In order to obtain a fine photomask pattern by such a method, it is important to reduce the thickness of the photoresist film and select the material of the light shielding layer.

  The resist pattern will be miniaturized in response to the miniaturization of the photomask pattern to be formed. However, if only the resist pattern is miniaturized without reducing the thickness of the resist film, it functions as an etching mask for the light shielding layer. The aspect ratio (the ratio between the resist film thickness and the pattern width) of the resist portion to be increased.

  In general, when the aspect ratio of a resist pattern increases, the pattern shape tends to deteriorate, and the pattern transfer accuracy to a light shielding layer using this as an etching mask decreases. In extreme cases, a part of the resist pattern may fall down or peel off, resulting in pattern omission. Therefore, as the photomask pattern is miniaturized, it is necessary to reduce the thickness of the resist used as the etching mask for patterning the light shielding layer so that the aspect ratio does not become too large.

  On the other hand, many materials have already been proposed as light shielding film materials for patterning using a photoresist as an etching mask. Among these, the chromium compound film has a large amount of information for etching, and in practice, the chromium compound has always been used as a light shielding film material, and has been established as a practical standard processing step. For example, Patent Documents 1 to 3 disclose a configuration example of a photomask blank in which a light-shielding film having a light-shielding characteristic required for a photomask blank for ArF exposure is formed of a chromium compound.

  The light shielding film of chromium compound is generally patterned by chlorine-based dry etching containing oxygen, but this etching condition often has an etching effect that cannot be ignored for organic films such as photoresist. For this reason, if the light shielding film is etched using a relatively thin resist film as a mask, the resist is damaged during the etching, and the shape of the resist pattern changes, so that the original resist pattern is accurately formed on the light shielding film. It becomes difficult to transfer to

  However, it is technically difficult to achieve high resolution, high patterning accuracy, and etching resistance at the same time for photoresist, which is an organic film, and as long as the conventional patterning process is followed, high resolution is achieved. In order to obtain a photoresist film, the photoresist film must be thinned. On the other hand, in order to ensure the etching resistance in the patterning process, the thinning of the photoresist film is limited. This results in a trade-off relationship between them.

For this reason, in order to reduce the load on the photoresist and form a highly accurate photomask pattern, it is necessary to optimize the selection of the light shielding film material and propose a new structure of the photomask blank. .
JP 2003-195479 A JP 2003-195483 A Registered Utility Model No. 3093632 JP 2001-312043 A JP-A 63-85553 JP-A-7-140635

  For example, Patent Document 4 reports an example in which a tantalum metal film is used as a light shielding layer for ArF exposure. In this example, a tantalum metal film is used as the light shielding layer and a tantalum oxide film is used as the antireflection layer. In order to reduce the load on the photoresist when etching the two layers, the photoresist is relatively damaged. It is supposed that etching is performed with fluorine-based gas plasma which is difficult to provide. However, even if such an etching condition is selected, there is a limit to reducing the load on the photoresist as long as the light shielding layer and the antireflection layer are etched using only the photoresist as a mask. It is difficult to sufficiently satisfy the requirement for forming a photomask pattern with high accuracy.

On the other hand, a technique of reducing the burden on the photoresist during dry etching by using a hard mask is also known. For example, Patent Document 5 discloses a technique using a SiO 2 film formed on a metal silicide film as an etching mask. A method of performing dry etching of a silicide film is disclosed. However, since the SiO 2 film has poor conductivity, there is a problem that charge-up occurs during electron beam exposure. In addition, defect inspection of a photomask blank is generally performed based on reflectance, and light having a wavelength of 257 nm is used for defect inspection of an ArF exposure mask, but for accurate defect inspection. Therefore, a reflectance of about 10 to 20% is required for light of this wavelength. However, when the SiO 2 film is used as an etching mask, there is a problem that the reflectivity of the SiO 2 film is too high and hinders the defect inspection itself.

As described above, in the structure of the conventional photomask blank, it is difficult to sufficiently satisfy the demand for forming a fine photomask pattern with high accuracy, which means that the exposure light wavelength is short and high resolution is required to be 250 nm. This is a problem for photolithographic photomasks (KrF: 248 nm, ArF: 193 nm, F 2 : 157 nm) that use light of the following wavelengths as exposure light, particularly in photomasks for forming resist patterns having a size of 65 nm rule or less. Serious. Therefore, it is very important to select a material for the light-shielding film in order to reduce the load on the photoresist and form a highly accurate photomask pattern.

  The present invention has been made in view of such a problem, and an object of the present invention is to reduce a burden on a photoresist used as a mask when forming a photomask pattern, thereby reducing a fine photomask. It is an object of the present invention to provide a photomask blank provided with a light shielding film having a structure capable of forming a pattern with high accuracy, and a photomask manufactured using the photomask blank.

In order to solve such a problem, the present invention provides a light-shielding structure in which a first light-shielding film and a second light-shielding film are sequentially laminated on a substrate transparent to exposure light. The first light-shielding film comprises a layer having a film thickness of 3 nm or more and 15 nm or less mainly composed of chromium (Cr) that is not substantially etched by fluorine-based dry etching, in the second light-shielding film is Ri Do the layer mainly composed of a fluorine-based dry etching capable silicon-containing compound, the first light-shielding film and the sum of the optical density of the second light-shielding film 2.5 or higher It is characterized by that.

  The invention according to claim 2 is the photomask blank according to claim 1, wherein the silicon-containing compound is an oxide, nitride, or oxynitride of silicon, or an oxide or nitride of silicon and a transition metal Or oxynitride.

  The invention according to claim 3 is the photomask blank according to claim 2, wherein the transition metal is titanium (Ti), vanadium (V), cobalt (Co), nickel (Ni), zirconium (Zr), It is at least one metal element selected from niobium (Nb), molybdenum (Mo), hafnium (Hf), tantalum (Ta), and tungsten (W).

  According to a fourth aspect of the present invention, in the photomask blank according to the second or third aspect, the silicon-containing compound contains 10 to 95 at% silicon, 0 to 60 at% oxygen, 0 to 57 at% nitrogen, 0 to 57 at% transition metal, The composition is in the range of 35 at%.

  The invention according to claim 5 is the photomask blank according to any one of claims 1 to 4, wherein an optical density of the second light-shielding film with respect to exposure light is 0.2 to 3.0. It is characterized by that.

  The invention according to claim 6 is the photomask blank according to claim 5, wherein the optical density of the second light-shielding film with respect to exposure light is 0.5 to 2.5.

  According to a seventh aspect of the present invention, in the photomask blank according to any one of the first to sixth aspects, the film thickness of the second light-shielding film is from 10 nm to 55 nm.

  According to an eighth aspect of the present invention, in the photomask blank according to the seventh aspect, the film thickness of the second light-shielding film is 25 nm or more and 55 nm or less.

  The invention according to claim 9 is the photomask blank according to any one of claims 1 to 8, wherein the nitrogen content of the second light-shielding film is 5 at% or more and 20 at% or less. And

  The invention according to claim 10 is the photomask blank according to any one of claims 1 to 9, wherein the extinction coefficient k at the exposure wavelength of the second light-shielding film is from the substrate side to the surface side. It is characterized by having a profile that gradually decreases over time.

  An eleventh aspect of the present invention is the photomask blank according to any one of the first to tenth aspects, wherein the first light-shielding film is made of metal chromium, chromium oxide, chromium nitride, or chromium oxynitride. Further, the film is characterized by being a film mainly composed of chromium oxycarbide, chromium nitrided carbide, or chromium oxynitride carbide.

  A twelfth aspect of the present invention is the photomask blank according to the eleventh aspect, wherein the first light-shielding film comprises 30 to 95 at% chromium, 0 to 60 at% oxygen, 0 to 50 at% nitrogen, and 0 to 20 at carbon. %, The composition is in the range of%.

  According to a thirteenth aspect of the present invention, in the photomask blank according to any one of the first to twelfth aspects, an optical density of the first light-shielding film with respect to exposure light is 0.3 to 3.0. It is characterized by that.

  According to a fourteenth aspect of the present invention, in the photomask blank according to the thirteenth aspect, an optical density of the first light-shielding film with respect to exposure light is 0.5 to 2.0.

  (Delete)

  A fifteenth aspect of the present invention is the photomask blank according to any one of the first to fourteenth aspects, wherein the first light-shielding film has a thickness of 5 nm to 15 nm.

  According to a sixteenth aspect of the present invention, in the photomask blank according to any one of the first to fifteenth aspects, the exposure light of the light shielding film in which the first light shielding film and the second light shielding film are sequentially laminated. The optical density is 2.5 or more.

  The invention according to claim 17 is the photomask blank according to any one of claims 1 to 16, wherein at least one of the first light-shielding film and the second light-shielding film is formed by sequentially laminating a plurality of layers. It is characterized by having a multilayered structure.

  The invention according to claim 18 is the photomask blank according to any one of claims 1 to 17, wherein the second light-shielding film has an antireflection function.

The invention according to claim 19 is a photomask manufactured using the photomask blank according to any one of claims 1 to 18,
According to a twenty-second aspect of the present invention, there is provided a first light-shielding film comprising a layer having a film thickness of 3 nm or more and 15 nm or less mainly composed of chromium that is not substantially etched by fluorine-based dry etching on a transparent substrate; A light-shielding film in which a second light-shielding film composed of a silicon-containing compound that can be etched as a main component is sequentially laminated , and the total optical density of the first light-shielding film and the second light-shielding film A method of manufacturing a photomask using a photomask blank provided with a light-shielding film having a thickness of 2.5 or more , wherein the second light-shielding film is formed using a photoresist mask formed on the second light-shielding film. A first step of patterning the light-shielding film by fluorine-based dry etching; and using the patterned second light-shielding film or resist film as a mask, the first light-shielding film is formed into an oxygen-containing chlorine-based film. Characterized in that it comprises a second step of patterning by etching, a.

  According to the present invention, the film forming materials for the first light-shielding film and the second light-shielding film have different dry etching characteristics, and these are optimally selected and combined. It is possible to reduce the burden on the photoresist used as a mask when forming the film, and as a result, a fine photomask pattern can be formed with high accuracy.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  As a result of intensive studies to reduce the burden on the photoresist used as a mask when forming a photomask pattern, the present inventors have found that the problem of the conventional photomask blank is that of the light shielding film made of a chromium-based material. Since the antireflection film provided on the top is formed of the same chromium-based material as the light shielding film, the antireflection film and the light shielding film have similar (dry) etching characteristics. It came to the conclusion that the light shielding film had to be processed with a single photoresist mask. A light-shielding film having an anti-reflection function (substantially anti-reflection film: hereinafter sometimes referred to as “second light-shielding film”) and a light-shielding film functioning as a substantial light-shielding film (hereinafter referred to as “first”). In other words, it is possible to reduce the burden on the resist mask when forming a photomask pattern by optimally selecting and combining materials having different dry etching characteristics. I found it.

  Therefore, in the present invention, materials having different etching characteristics (heterogeneous material systems) are selected as materials for the second light-shielding film having an antireflection function and the first light-shielding film that functions as a substantial light-shielding film. Therefore, a novel structure that reduces the burden on the resist mask during photomask pattern formation by utilizing this etching selectivity is employed.

  Although details will be described later, if the etching selectivity of the material of the first light-shielding film and the second light-shielding film is used, a patterned mask is formed using a resist mask only as an etching mask for the second light-shielding film. It becomes possible to etch the first light-shielding film using the second light-shielding film as a hard mask. In particular, the material of the second light-shielding film that can be processed by fluorine-based dry etching with a relatively light load on the photoresist (for example, silicon compounds, metal silicon compounds, particularly metal silicon oxides, metal silicon nitrides) Or metal silicon oxynitride or the like), the load on the resist mask is greatly reduced, and the change in the shape of the resist pattern is remarkably reduced. Thus, the second light-shielding film having an antireflection function is obtained. The original resist pattern can be accurately transferred. Then, the patterned second light-shielding film is used as a hard mask, and the first light-shielding film (chromium-based light-shielding film) mainly composed of chromium is etched to function as a substantial light-shielding film. A predetermined photomask pattern is accurately transferred onto one light-shielding film. Note that it is possible to etch the first light-shielding film (chromium-based light-shielding film) containing chromium as a main component using the remaining resist mask.

  Further, in the configuration of the photomask blank of the present invention, since the etching time performed using the resist mask is also shortened, the resist film thickness can be reduced. The aspect ratio does not become too large, and it is possible to avoid inconveniences such as a decrease in pattern transfer accuracy due to the deterioration of the pattern shape and pattern omission due to partial peeling of the resist pattern.

  In this way, a material that can be subjected to fluorine-based dry etching with a relatively light load on the photoresist is selected as the material of the second light-shielding film having the antireflection function, and compared with the material on the second light-shielding film. Forming a photoresist mask having a very thin film thickness, patterning the second light-shielding film, and etching the first light-shielding film (chrome-based light-shielding film) using the second light-shielding film as a hard mask; Then, there is no restriction that the thinning of the photoresist film is limited in order to ensure the etching resistance of the photoresist in the patterning process of the photomask blank, and the thinning of the photoresist film to obtain high resolution is eliminated. It becomes possible. In other words, the problems of the conventional photomask blank structure (the trade-off relationship between high resolution and etching resistance) are eliminated, reducing the burden on the photoresist, and creating a fine photomask pattern. It can be formed with high accuracy.

  Hereinafter, the present invention will be described in more detail by way of examples.

(Basic structure of photomask blank)
FIG. 1 is a schematic cross-sectional view for explaining an example of the basic structure of a photomask blank of the present invention. The basic structure of the photomask blank is an optically transparent substrate as shown in FIG. A light-shielding film 12 is provided on one main surface 11, and the light-shielding film 12 is formed by sequentially laminating a first light-shielding film 13 and a second light-shielding film 14. As the substrate 11, a general transparent substrate such as quartz glass, CF 2 or aluminosilicate glass can be used. The first light-shielding film 13 is a film that is not substantially etched by fluorine-based dry etching (F-based dry etching), and its main component is chromium. Further, the second light-shielding film 14 is a film containing a silicon-containing compound as a main component capable of F-based dry etching.

  Here, the silicon-containing compound that is the main component of the second light-shielding film 14 may be, for example, an oxide, nitride, or oxynitride of silicon, or an oxide, nitride, or oxide of silicon and a transition metal. A nitride can be selected. Since such a light-shielding film can ensure conductivity, it has an excellent charge-up suppressing effect when drawing with an electron beam, and this feature can be expected especially when a transition metal is included. Moreover, it is excellent also in the wavelength dependence of a reflectance so that it may mention later.

  Examples of the transition metal contained in the silicon-containing compound include titanium (Ti), vanadium (V), cobalt (Co), nickel (Ni), zirconium (Zr), niobium (Nb), molybdenum (Mo), and hafnium. Although at least one metal element selected from (Hf), tantalum (Ta), and tungsten (W) can be used, molybdenum is most preferable from the viewpoints of dry etching processability, chemical resistance, and conductivity. Such a film containing a transition metal has a function as an antireflection film excellent in chemical resistance, conductivity, and optical characteristics.

  The composition (atomic ratio: at%) of the silicon-containing compound that is the material of the second light-shielding film 14 is 10 to 95 at% for silicon, 0 to 60 at% for oxygen, 0 to 57 at% for nitrogen, and 0 for transition metal. It is set to be in a range of ˜35 at%, and preferably contains at least 0.2 at% or more of a transition metal. If necessary, the silicon-containing compound may contain 30 at% or less of carbon.

  The optical density of the second light-shielding film with respect to the exposure light is such that the optical density with respect to the exposure light of the light-shielding film in which the first light-shielding film and the second light-shielding film are sequentially laminated is 2.5 or more. Further, the film is designed so as to be in the range of 0.2 to 3.0, and more preferably in the range of 0.5 to 2.5. In addition, the thickness of the second light-shielding film 14 is appropriately designed according to the wavelength of light used for inspection, but an antireflection effect is usually obtained by setting the thickness to 10 to 45 nm. In the case of a photomask blank used for manufacturing a photomask for ArF exposure, the thickness of the second light-shielding film 14 is preferably 15 to 30 nm.

  The profile of the extinction coefficient k at the exposure wavelength of the second light-shielding film 14 is preferably designed so as to gradually decrease from the substrate 11 side to the surface side. Such a profile can be realized by changing the transition metal concentration in the silicon-containing compound that is the material of the second light-shielding film 14. Specifically, when the transition metal concentration is increased, the extinction coefficient k increases, and conversely, the extinction coefficient k can be decreased by decreasing the transition metal concentration. That is, the composition may be designed so that the transition metal concentration in the film gradually decreases from the substrate 11 side to the surface side.

  The above-described profile of the attenuation coefficient k can also be realized by changing the concentration of light elements (oxygen, nitrogen, carbon) in the silicon-containing compound. Specifically, when the light element concentration is increased, the extinction coefficient k decreases, and conversely, the extinction coefficient k can be increased by decreasing the light element concentration. In other words, the composition may be designed so that the light element concentration in the film gradually increases from the substrate 11 side to the surface side.

  With such an extinction coefficient profile, the light shielding property of the second light shielding film 14 is enhanced, and the degree of freedom in designing the film thickness of the first light shielding film 13 can be increased. As a result, the side etch amount of the first light-shielding film 13 during patterning can be controlled, and the wavelength characteristic of the reflectance can be improved when functioning as an “antireflection film”. .

  In addition, when the composition of the second light-shielding film 14 is designed so that silicon is in an unsaturated state in the interface region with the first light-shielding film 13, the adhesion with the first light-shielding film 13 is improved. be able to. On the other hand, if the composition on the surface side is designed so that silicon is saturated (or supersaturated), it is possible to reduce the reflectance in the short wavelength region and improve the pattern transfer characteristics onto the semiconductor substrate. In addition, chemical resistance is improved.

  The first light-shielding film 13 is a film containing chromium as a main component. For example, metal chromium, chromium oxide, chromium nitride, chromium oxynitride, chromium oxide carbide, chromium nitride carbide, or chromium oxynitride carbide is used. The main component. The composition of the first light-shielding film 13 is set so that chromium is in the range of 30 to 95 at%, oxygen is 0 to 60 at%, nitrogen is 0 to 50 at%, and carbon is 0 to 20 at%.

  The optical density of the first light-shielding film 13 with respect to the exposure light is 2.5 for the exposure light of the light-shielding film 12 in which the first light-shielding film 13 and the second light-shielding film 14 are sequentially laminated. As described above, the film is preferably designed to be in the range of 0.3 to 3.0, and more preferably in the range of 0.5 to 2.0. The film thickness is preferably 5 nm to 50 nm, more preferably 5 nm to 25 nm. By adopting such a film thickness design, the conductivity can be suppressed sufficiently low, and the side etch in the patterning process can also be suppressed.

  Usually, the second light-shielding film 14 is used as a so-called “antireflection film”, and the first light-shielding film 13 is used as a so-called “light-shielding film”. In this specification, these two layers are laminated. Are collectively referred to as “light-shielding film”. These film configurations can be designed in various ways. For example, the composition of the second light-shielding film 14 on the substrate 11 side is designed so that the content of oxygen and nitrogen is extremely low, so that it is functionally part of the “light-shielding film”. The composition on the second light-shielding film 14 side of the light-shielding film 13 may be designed so that the content of oxygen or nitrogen is relatively high, so that it is functionally part of the “antireflection film”. it can. In the present specification, the case where the first light-shielding film 13 functions as a part of the “antireflection film” is also treated as a substantial “light-shielding film”, and the second light-shielding film 14 is the “light-shielding film”. Even when it functions as a part of, it is treated as a substantial “antireflection film”.

  The first light-shielding film 13 and the second light-shielding film 14 constituting the photomask blank of the present invention are each composed of a single layer, and both or both of these films are plural. A multilayer film in which these layers are laminated may be used. Even when adopting such a multilayer structure, it is preferable that the composition of at least one of the layers constituting the light-shielding film is in the above-described composition range. Further, instead of the multilayer structure, the film composition may be changed in an inclined manner (an inclined structure).

  When such an inclined structure is employed for the second light-shielding film (antireflection film), a wavelength region in which a preferable reflectance for light used for inspection can be obtained can be widened. Further, by increasing the light element content on the outermost surface of the light-shielding film (or providing a film having a high light element content), the chemical stability of the surface can be enhanced. Further, by increasing the light element content in the region of about 10 nm on the substrate side of the first light-shielding film (light-shielding film) and lowering the chromium content, in-plane variation in etching can be suppressed.

  Further, as illustrated in FIG. 1B, the light shielding film 12 is not directly provided on the main surface of the substrate 11, but between the substrate 11 and the light shielding film 12 (that is, the substrate 11 and the first film). A third optical film 15 may be provided between the light-shielding film 13. Such a third optical film 15 can be, for example, an etching stopper film, a translucent film, or a phase shift film. When the third optical film 15 is provided as described above, the sum of the optical densities of the third optical film 15, the first light-shielding film 13, and the second light-shielding film 14 with respect to the exposure light is calculated. The film is designed to be 2.5 or more. Needless to say, the fourth or fifth optical film may be provided.

  In some cases, the third optical film 15 may be a halftone phase shift layer (halftone phase shift layer). Like the second light-shielding film 14 described above, It is preferable to select silicon oxide, nitride, or oxynitride, or silicon and transition metal oxide, nitride, or oxynitride as a film forming material. Preferably, the clear time (etching removal time) when fluorine-based dry etching is performed under the same conditions as the second light-shielding film 14 is longer than the clear time of the second light-shielding film 14. The composition and the film thickness are designed so that

  The film formation in the case where the film forming material of the second light-shielding film 14 or the third optical film 15 is silicon or an oxide or nitride or oxynitride of silicon and transition metal is disclosed in, for example, Patent Document 6. It can be performed by a known method as described above. For example, the film is formed by appropriately combining targets of silicon and molybdenum or molybdenum silicide and performing reactive sputtering in a reactive gas atmosphere or in a mixed gas atmosphere of a reactive gas and an inert gas such as argon.

  Similarly, when the main component of the first light-shielding film 13 is chromium oxide, chromium nitride, chromium oxynitride, chromium oxide carbide, chromium nitride carbide, or chromium oxynitride carbide, the target is chromium. A known method such as reactive sputtering can be employed.

As these sputtering methods, a direct current (DC) power source or a high frequency (RF) power source may be used, and a magnetron method or other methods may be used. As the sputtering gas, an inert gas such as Ar or Ne can be used. The reactive gas is appropriately selected according to the target composition. For example, a gas containing oxygen such as O 2 is used when depositing CrO, and a gas containing nitrogen such as N 2 , NO 2 , N 2 O, and NO and O 2 , N 2 O, A gas containing oxygen such as NO and NO 2 is mixed and used to form a CrONC film, such as a gas containing carbon such as CO, CO 2 and CH 4 and nitrogen such as N 2 , NO 2 , N 2 O and NO. A gas containing oxygen and a gas containing oxygen such as O 2 , N 2 O, NO, NO 2 , CO 2 are mixed and used.

(Photomask blank manufacturing process)
In this example, a manufacturing process for obtaining the photomask blank of the present invention having the configuration described in Example 1 will be described.

[First light-shielding film (light-shielding film)]
FIG. 2 is a schematic cross-sectional view for explaining the configuration of a sputtering apparatus used for forming the first light-shielding film provided in the photomask blank of the present invention, in which 11 is a 6-inch square quartz substrate. A transparent substrate, 101 is a chamber, 102a is a first target, 102b is a second target, 103 is a sputter gas introduction port, 104 is a gas exhaust port, 105 is a substrate turntable, and 106a and 106b are first And a power source for applying a bias to the second target.

In this embodiment, a chromium target is used as the first target 102a, and the first light-shielding film of chromium is formed by sputtering only this target. Ar was used as the sputtering gas, Ar gas was introduced into the chamber 101 at a flow rate of 10 sccm and N 2 gas was set at 4 sccm, and the gas pressure in the chamber was set to 0.1 Pa. Then, a heating temperature before film formation is set to 120 ° C., a discharge power of 1000 W is applied to the Cr target, and a chromium nitride film having a film thickness of 40 nm is formed while rotating the substrate 11 at 30 rpm. A film (light-shielding film) was used. The composition of this chromium nitride film is a CrN (Cr: N = 9: 1) film having a composition ratio (atomic ratio) of chromium (Cr) and nitrogen (N) of 9: 1.

[Second light-shielding film (antireflection film)]
A second light-shielding film (antireflection film) is formed on the first light-shielding film (light-shielding film) using the sputtering apparatus having the configuration shown in FIG. 2, and the light-shielding property of the photomask blank of the present invention is determined. A membrane was obtained. Note that the target used here is a silicon (Si) single crystal as the first target 102a and a molybdenum silicide (MoSi 3 ) polycrystal as the second target 102b. The gas flow rate was set so that the gas pressure in the chamber during film formation was 0.1 Pa, and a molybdenum silicide compound film (MoSiN film) was formed while rotating the substrate at 30 rpm.

Specifically, Ar gas as a sputtering gas is introduced into the chamber 101 at a flow rate of 20 sccm and N 2 gas at a flow rate of 0 sccm, the gas pressure in the chamber is set to 0.1 Pa, 700 W is discharged to the MoSi 3 target, and 300 W is discharged to the Si target. Film formation was started while electric power was applied and the substrate 11 was rotated at 30 rpm. Gradually, Ar gas was introduced into the chamber 101 at a flow rate of 5 sccm and N 2 gas was introduced at 50 sccm, and the gas pressure in the chamber was reduced to 0. The film thickness was set to about 20 nm while continuously changing the film formation conditions so that the discharge power of the MoSi 3 target was 100 W and the discharge power of the Si target was 900 W. With such film formation conditions, a film having a “gradient structure” having a composition gradient in which the transition metal content and nitrogen content in the film gradually change can be obtained.

[Third optical film]
The third optical film is also formed using the sputtering apparatus having the configuration shown in FIG. 2 in the same manner as the first and second light-shielding films. As described above, when the third optical film is a halftone phase shift layer, silicon oxide, nitride, or oxynitride, or silicon and transition metal oxide, nitride, or It is preferable to form a film using oxynitride. Therefore, a sputtering target is appropriately selected according to which compound the halftone phase shift layer is formed from, and the film is formed under substantially the same conditions as the second light-shielding film.

  Note that the halftone phase shift layer may be a composite film in which films having different compositions are laminated. The film composition of such a halftone phase shift layer is designed so that the transmittance of a single layer film or multilayer film made of the materials listed above is 2 to 40% and the phase shift amount is about 180 °. Specific film formation examples are as follows.

First, a Si single crystal is used as the first target 102a, a MoZrSi 4 sintered body is used as the second target 102b, a discharge power of 560 W is applied to the MoZrSi 4 target and 1000 W is applied to the Si target, and the substrate 11 is moved at 30 rpm. Sputter film formation was performed while rotating at 10 to form an optical adjustment layer having a thickness of 10 nm on the substrate 11. The sputtering gas was a mixed gas of Ar with a flow rate of 8 sccm, N 2 with a flow rate of 20 sccm, and O 2 with a flow rate of 5 sccm. The gas pressure in the chamber during sputtering was set to 0.15 Pa.

Next, the discharge power is changed so that the MoZrSi 4 target is 430 W and the Si target is 1000 W, the sputtering gas is changed to a mixed gas of 15 sccm of Ar, 100 sccm of N 2 , and 1 sccm of O 2 , and the substrate 11 is changed. While rotating at 30 rpm, a low-stress layer having a thickness of 40 nm was formed at a gas pressure of 0.25 Pa.

Further, the discharge power was changed so that the MoZrSi 4 target was 100 W and the Si target was 1000 W, the sputtering gas was changed to a mixed gas of 5 sccm of Ar, 50 sccm of N 2 , and 5 sccm of O 2 , and the substrate 11 was changed to 30 rpm. Then, a surface layer having a thickness of 20 nm was formed at a gas pressure of 0.1 Pa.

  As described above, the halftone phase shift layer was configured as a laminated structure including three layers of the optical adjustment layer, the low stress layer, and the surface layer.

[Practicality of the second light-shielding film as a hard mask]
The practicality of the second light-shielding film as a hard mask was confirmed using a photomask blank provided with the first and second light-shielding films formed under the conditions described above. On the second light-shielding film, a chemically amplified photoresist (thickness: 100 nm) is applied and patterned by electron beam lithography to form a resist mask. Using this as a mask, the second light-shielding film (antireflection film) The film was subjected to fluorine dry etching (CF 4 flow rate 80 sccm, applied bias 60 W, chamber internal pressure 2 Pa) for patterning.

  As a result of observing the cross-section of the photomask blank after the patterning with a scanning electron microscope, the etching cross-sectional shape is good and the etching to the first light-shielding film (light-shielding film) is not substantially progressing. Was confirmed. From this result, it was confirmed that the second light-shielding film (antireflection film) can be sufficiently used as a hard mask for patterning the first light-shielding film (light-shielding film).

[Optical density]
A photomask blank provided with the first and second light-shielding films formed under the above-described conditions was used, and the optical density of the light-shielding film was measured with a spectrophotometer when light was incident on this from the substrate side. .

  FIG. 3 shows the second light-shielding property of MoSiN having a film thickness of 23.4 nm on the first light-shielding film (film thickness of 40 nm) of CrN (Cr: N = 9: 1) formed under the above-described conditions. It is a figure which shows the wavelength dependence of the optical density (OD) of the photomask blank provided with the film | membrane. As shown in this figure, a value of about 3.0 was obtained as the optical density in light having a wavelength of 193 nm, and it was confirmed that the optical density in ArF exposure could be 2.5 or more.

In the second light-shielding film of the photomask shown in FIG. 3, first, Ar gas as a sputtering gas is introduced into the chamber 101 at a flow rate of 20 sccm and N 2 gas is introduced into the chamber 101 at a flow rate of 0. 1 Pa, initial discharge power is set to MoSi 3 target 700 W and Si target 300 W to start film formation, and then gradually introduced into chamber 101 at a flow rate of Ar gas of 5 sccm and N 2 gas of 50 sccm. The film was formed while continuously changing the film formation conditions so that the inner gas pressure was 0.1 Pa and the final discharge power was MoSi 3 target 100 W and Si target 900 W.

[Wavelength dependence of reflectance]
Using a photomask blank provided with the first and second light-shielding films formed under the conditions described above, the intensity of the reflected light when light is incident on the light-shielding film side is measured with a spectrophotometer. The wavelength dependence of the reflectance was measured.

  FIG. 4 is a diagram showing the results of measuring the reflectance with respect to light in the wavelength range of 190 nm to 600 nm. The film formation conditions for each of the evaluation samples 1 to 4 were summarized. The evaluation sample No. 1-3 have a single-layer structure for the second light-shielding film. Reference numeral 4 denotes the second light-shielding film having a two-layer structure.

  As is apparent from the results shown in FIG. 4, in addition to being able to reduce the reflectance so that the reflectance in ArF exposure wavelength (λ = 193 nm) light is 10% or less, the inspection wavelength ( The reflectance in the light of (λ = 257 nm) can be in the range of 10 to 20%.

  Thus, if the thickness of the second light-shielding film (antireflection film) is in the range of 15 to 30 nm, the reflectance for light having a wavelength of 257 nm can be set to 10 to 20%. It was confirmed that inspection with a defect inspection device is possible.

  Here, the evaluation sample No. In No. 3, the sputtering power at the time of forming the second light-shielding film is constant, and the transition metal composition in the film has no gradient. In this case, the wavelength dependency of the reflectance becomes larger compared to a film formed under other film formation conditions (film formation conditions that give a gradient to the transition metal composition in the film), and the wavelength at the inspection wavelength is increased. Reflectivity control tends to be difficult. This is because the multiple reflection condition becomes sharp because the difference between the substrate side and the surface layer side of the extinction coefficient k is small compared to other conditions in which both the transition metal and the nitrogen content are inclined structures. . In addition, evaluation sample No. 3 has a low transition metal content (at%) in the film, but with such a composition, the extinction coefficient k in the long wavelength region is small, so the wavelength of the reflectance Shows a tendency to become more dependent.

[Chemical stability (chemical resistance)]
Chemical stability (chemical resistance) was confirmed using a photomask blank provided with the first and second light-shielding films formed under the conditions described above. Specifically, ammonia overwater (ammonia water: hydrogen peroxide water: water = 1: 1: 30 (volume ratio)) and sulfuric acid overwater (sulfuric acid: hydrogen peroxide water = 4: 1 (volume ratio)) The amount of change in reflectivity after immersion for 1 hour was measured with a spectrophotometer. As a result, the reflectance change at a wavelength of 365 nm was 2% or less under any of the above conditions, and it was confirmed that chemical stability (chemical resistance) sufficient for practical use was exhibited.

(Binary photomask manufacturing process)
In this example, a manufacturing process for obtaining a photomask using the photomask blank of the present invention will be described. Here, description will be made assuming that the photomask is a binary mask.

  FIG. 5 is a diagram for explaining the manufacturing process of the binary photomask. First, a photoresist film 16 is applied on the light-shielding film 12 provided on the substrate 11 (FIG. 5A). A resist pattern 17 for drawing a circuit pattern is formed on the resist 16 (FIG. 5B). Preferably, a surface treatment for reducing the surface energy of the substrate is performed before applying the photoresist film 16. This is a process for preventing the resist mask on which a fine pattern is formed from being peeled off or falling in the subsequent process.

  The most preferable method for this surface treatment is alkylsilylation of the substrate surface (actually the light-shielding film surface) with hexamethyldisilazane (HMDS) or other organic silicon-based surface treatment agents commonly used in semiconductor manufacturing processes. There are methods such as exposing the substrate surface to a gas containing these surface treatment agents, or directly applying the surface treatment agent to the substrate surface.

  As the photoresist to be used, an appropriate one is selected according to a drawing apparatus used for producing a photomask pattern. However, as an electron beam (EB) drawing resist generally used for fine patterning, a fragrance is usually used. A positive or negative resist having a group skeleton in the polymer is used. Note that a chemically amplified resist is preferably used for manufacturing a photomask on which a finer pattern is formed.

  The photoresist film 16 has a thickness within a range in which the pattern shape can be satisfactorily obtained and the function as an etching mask can be achieved. In particular, the photoresist film 16 in the case of producing a photomask for ArF exposure that requires fine pattern formation needs to be relatively thin so that the aspect ratio does not increase, and is preferably 350 nm or less, More preferably, it is 250 nm or less.

  On the other hand, the lower limit of the film thickness of the photoresist film 16 is determined by comprehensively considering conditions such as etching resistance of the resist material to be used. However, when a general resist material is used, it is preferably 75 nm or more. More preferably, it is 100 nm or more. In addition, "multilayer resist method" by combining resist using silicone resin and lower layer film using aromatic resin, "surface imaging method" combining aromatic chemical amplification resist and silicone surface treatment agent When is adopted, the total thickness of the photoresist film 16 can be made thinner than the above value. As a matter of course, an appropriate photoresist application condition and drying method are selected according to the resist to be used.

Drawing on the photoresist film 16 can be performed by a light irradiation method, but generally a method by EB irradiation, which is a preferable method for forming a fine pattern, is employed. For example, when a chemically amplified resist is used and is drawn by EB irradiation, drawing is usually performed with an electron beam in an energy density range of 3 to 30 μC / cm 2 , and after this drawing, heat treatment and The resist pattern 17 is obtained by developing.

Using the resist pattern 17 thus obtained as a mask, the second light-shielding film 14 having a function as an antireflection film is patterned (FIG. 5C). Since the second light-shielding film 14 is a film containing a silicon-containing compound as a main component, it can be patterned by fluorine-based (F-based) or oxygen-free chlorine-based (Cl-based) dry etching. Then, fluorine-based dry etching that has a relatively light load on the photoresist is selected. The gas used for such fluorine-based dry etching is a fluorine-containing gas such as CF 4 or C 2 F 6, but a gas such as oxygen may be added as necessary.

  In this etching step, the first light-shielding film 13 which is a film containing chromium as a main component is not substantially etched, so that the resist pattern 17 functions only as an etching mask for the second light-shielding film 14. . Therefore, the thickness of the resist pattern 17 can be reduced as long as it serves as an etching mask for the second light-shielding film 14, so that an increase in aspect ratio can be suppressed and patterning accuracy can be improved. It becomes possible.

Next, using the patterned photoresist 17 and the second light-shielding film 14 as an etching mask, the first light-shielding film 13 is patterned by oxygen-containing chlorine-based ((Cl + O) -based) dry etching (FIG. 5). (D)). Here, the oxygen-containing chlorine-based dry etching conditions are not particularly limited, and may be known ones conventionally used for dry etching of chromium compound films. For example, the mixing ratio of chlorine gas and oxygen gas (Cl 2 gas: O 2 gas) is 1: 2 to 20: 1 by volume flow ratio, and an inert gas such as helium is mixed as necessary. It has been confirmed that when oxygen gas is mixed at a volume flow ratio of 5% or more with respect to chlorine gas, substantial etching of the silicon-containing compound used as the second light-shielding film does not proceed.

  In this way, the patterning of the light shielding film is completed, and the resist pattern 17 remaining on the second light shielding film 14 is peeled off (FIG. 5E). Final cleaning with a cleaning solution such as a mixture of ammonia water and hydrogen peroxide solution completes a binary photomask.

(Phase shift mask manufacturing process)
In this embodiment, a manufacturing process for obtaining a phase shift mask using the photomask blank of the present invention will be described.

  FIG. 6 is a diagram for explaining the manufacturing process of the phase shift mask. First, a first photoresist film 18 is applied on the light shielding film 12 provided on the substrate 11 via the phase shift layer 15. Then, a first resist pattern 19 for drawing a circuit pattern is formed on the photoresist film 18 (FIG. 6B). As described above, it is preferable to perform surface treatment for lowering the surface energy of the substrate before applying the photoresist film 18. The preferable selection and film thickness of the photoresist used here are also as described above.

  Using the first resist pattern 19 thus obtained as a mask, patterning of the second light-shielding film 14 having a function as an antireflection film is performed by fluorine-based dry etching (FIG. 6C).

  In this state, the first resist pattern 19 is peeled off (FIG. 6D), and a second photoresist film is newly applied and patterned to form a second resist pattern 20 (FIG. 6E). )). The second resist pattern 20 is formed so that the light shielding film 12 is finally left in a desired region. In a general phase shift mask, the pattern fineness of the light-shielding film 12 to be finally obtained is lower than the pattern fineness of the phase shift layer 15. Therefore, in order not to cause a change in physical properties of the second light-shielding film in the portion covered with the resist until all the etching is completed, emphasis is placed on the etching resistance rather than the high resolution, and the first film as a protective film. The material of the second photoresist film is selected.

Next, using the patterned second resist pattern 20 and second light-shielding film 14 as an etching mask, the first light-shielding film 13 is subjected to oxygen-containing chlorine ((Cl + O)) dry etching and patterned. (FIG. 6 (f)). As already described for the conditions of this oxygen-containing chlorine-based dry etching, for example, the mixing ratio of chlorine gas and oxygen gas (Cl 2 gas: O 2 gas) is set to 1: 2 to 20: 1 by volume flow ratio, and is necessary. Depending on the situation, an inert gas such as helium is mixed. In this way, the patterning of the light shielding film 12 is completed.

  As already described, the material for forming the phase shift layer 15 is silicon, silicon and transition metal oxides, nitrides, oxynitrides or the like so that fluorine-based dry etching is possible, and the patterning thereof is fluorine. Performed by system dry etching. In this step, since the second light-shielding film 14 not covered with the second resist pattern 20 is etched, the first light-shielding property made of a chromium-based material functions as an effective etching mask. The film 13 is used as a mask and is pattern-transferred to the phase shift layer 15 (FIG. 6G).

  In the present embodiment, the clear time (etching removal time) of the phase shift layer 15 when the fluorine-based dry etching is performed under the same conditions as the second light-shielding film 14 is the same as that of the second light-shielding film 14. The composition and film thickness are designed to be longer than the clear time. When such a clear time is set, the second light-shielding film 14 is completely removed during the etching process of the phase shift layer 15, and the phase that is not protected by the second resist pattern 20 at the etching end stage. Only the first light-shielding film 13 made of a chromium-based material remains on the shift layer 15. The etching conditions for the phase shift layer 15 can be based on a known general technique.

  Then, the first light-shielding film 13 that is no longer necessary as a light-shielding film is removed under the general etching conditions of the chromium-based material (FIG. 6 (h)), and finally the second light-shielding film. The second resist pattern 20 remaining on the surface 14 is peeled off (FIG. 6 (i)), and finally cleaned with a cleaning solution such as a mixed solution of sulfuric acid and hydrogen peroxide solution or a mixed solution of ammonia water and hydrogen peroxide solution. Thus, the phase shift mask is completed.

  As shown in FIG. 7, the second resist pattern 20 may be provided after the etching of the first light shielding film 13. In this case, a first photoresist film 18 is applied on the light-shielding film 12 (FIG. 7A), and a first resist pattern 19 for drawing a circuit pattern is formed on the photoresist film 18. Then, the second light-shielding film 14 is patterned by fluorine-based dry etching using the first resist pattern 19 as a mask (FIG. 7C). Then, using the second light-shielding film 14 (and the first resist pattern 19) as an etching mask, the first light-shielding film 13 is patterned by oxygen-containing chlorine-based ((Cl + O) -based) dry etching (FIG. 7 (d)).

  In this state, the first resist pattern 19 is peeled off (FIG. 7E), and a second photoresist film is newly applied and patterned to form the second resist pattern 20 (FIG. 7F). )). Then, the phase shift layer 15 is patterned by fluorine-based dry etching, and the pattern is transferred to the phase shift layer 15 using the first light-shielding film 13 made of a chromium-based material as an effective etching mask (FIG. 7 ( g)). The first light-shielding film 13 that is no longer necessary as a light-shielding film is removed under the general etching conditions of a chromium-based material (FIG. 7 (h)), and finally, on the second light-shielding film 14. The remaining second resist pattern 20 is peeled off (FIG. 7 (i)), and is finally cleaned with a cleaning solution such as a mixed solution of sulfuric acid and hydrogen peroxide solution or a mixed solution of ammonia solution and hydrogen peroxide solution. A phase shift mask is completed.

(Binary photomask blank having a second light-shielding film of chromium compound)
In this comparative example, various characteristics of the binary photomask blank in the case where the second light-shielding film is a CrON film that is a chromium compound will be described. The first light-shielding film (light-shielding film) of this binary photomask blank is a CrN film (film thickness of about 40 nm) with a 9: 1 composition ratio (atomic ratio) of chromium and nitrogen. Since the conditions are the same as those already described in the second embodiment, repeated description is omitted.

A second light-shielding film of CrON was formed on the first light-shielding film of CrN using the sputtering apparatus shown in FIG. Specifically, Ar is used as the sputtering gas, Ar gas is introduced at a flow rate of 15 sccm, N 2 gas is introduced at 30 sccm, and O 2 gas is introduced into the chamber 101 at a flow rate of 15 sccm so that the gas pressure in the chamber becomes 0.1 Pa. Set to. Then, a heating temperature before film formation was set to 120 ° C., a discharge power of 1000 W was applied to the Cr target, and a chromium oxynitride film having a film thickness of about 20 nm was formed while rotating the substrate 11 at 30 rpm. It was. The chromium oxynitride film is a CrON film having a composition ratio (atomic ratio) of chromium (Cr) and nitrogen (N) of 4: 1: 5. Table 2 summarizes various characteristics of the binary photomask blank in which the first and second light-shielding films are laminated.

[Optical density]
FIG. 8 is a diagram showing the results of measuring the wavelength dependence of the optical density of the light-shielding film with a spectrophotometer when light is incident on the binary photomask blank of this comparative example from the substrate side. As shown, an optical density of about 3.0 was obtained for light having a wavelength of 193 nm, and it was confirmed that the optical density in ArF exposure could be 2.5 or more.

[Wavelength dependence of reflectance]
The intensity of the reflected light when light was incident on the photomask blank of this comparative example from the light-shielding film side was measured with a spectrophotometer to measure the wavelength dependence of the reflectance.

  FIG. 9 is a diagram showing the results of measuring the reflectivity for light in the wavelength range of 190 nm to 600 nm. The reflectivity for light with an ArF exposure wavelength (λ = 193 nm) exceeds 15%. It was confirmed that it was difficult to sufficiently reduce the reflectance of (10% or less). The light-shielding film of this comparative example has a reflectivity of 10 to 20% with respect to light having a wavelength of 257 nm, and is designed to be inspected with a general defect inspection apparatus.

  As described above, when the second light-shielding film is a chromium compound film, the reflectance of light with an ArF exposure wavelength is 10% or less when the reflectance of light with a wavelength of 257 nm is in the range of 10 to 20%. In contrast, in the photomask blank of the present invention provided with the second light-shielding film including a layer containing a silicon-containing compound as a main component, the reflectance of light having an ArF exposure wavelength is 10% or less. However, the reflectance of light having a wavelength of 257 nm can be in the range of 10 to 20%.

(Photomask blank manufacturing process: second example)
In this example, a second example of a manufacturing process for obtaining the photomask blank of the present invention having the configuration described in Example 1 will be described.

[First light-shielding film (light-shielding film)]
Also in this example, the configuration of the sputtering apparatus used for forming the first light-shielding film provided in the photomask blank of the present invention is as shown in FIG. 2, in which 11 is a 6-inch square. A transparent substrate which is a quartz substrate, 101 is a chamber, 102a is a first target, 102b is a second target, 103 is a sputter gas inlet, 104 is a gas exhaust port, 105 is a substrate turntable, and 106a and 106b are respectively A power supply for applying a bias to the first and second targets.

In this embodiment, a chromium target is used as the first target 102a, and the first light-shielding film of chromium is formed by sputtering only this target. Ar was used as the sputtering gas, Ar gas was introduced into the chamber 101 at a flow rate of 10 sccm and N 2 gas at a flow rate of 4 sccm, and the gas pressure in the chamber was set to 0.1 Pa. Then, a heating temperature before film formation is set to 120 ° C., a discharge power of 1000 W is applied to the Cr target, and a chromium nitride film having a film thickness of 10 nm is formed while rotating the substrate 11 at 30 rpm. A film (light-shielding film) was used. The composition of this chromium nitride film is a CrN (Cr: N = 9: 1) film having a composition ratio (atomic ratio) of chromium (Cr) and nitrogen (N) of 9: 1.

[Second light-shielding film]
A second light-shielding film (antireflection film) is formed on the first light-shielding film (light-shielding film) using the sputtering apparatus having the configuration shown in FIG. 2, and the light-shielding property of the photomask blank of the present invention is determined. A membrane was obtained. Note that the target used here is a silicon (Si) single crystal as the first target 102a and a molybdenum silicide (MoSi 2 ) polycrystal as the second target 102b. A gas flow rate was set so that the gas pressure in the chamber during film formation was 0.1 Pa, and a multilayer film of a molybdenum silicide compound film (MoSiN film) was formed while rotating the substrate at 30 rpm.

Specifically, Ar gas is introduced into the chamber 101 as a sputtering gas at a flow rate of 20 sccm and N 2 gas is introduced into the chamber 101 to have a gas pressure in the chamber of 0.1 Pa, and a discharge of 200 W for the MoSi 2 target and 800 W for the Si target. Film formation was started while applying power and rotating the substrate 11 at 30 rpm. When the film thickness reached 33 nm, Ar gas was gradually introduced into the chamber 101 at a flow rate of 5 sccm and N 2 gas at 50 sccm, the gas pressure in the chamber was set to 0.1 Pa, and the discharge power of the MoSi 2 target was 200 W. The film was formed so that the film thickness was about 18 nm while continuously changing the film formation conditions so that the discharge power of the Si target was 800 W. Under such film formation conditions, a light-shielding film (film thickness: 33 + 18 = 51 nm) having an “anti-gradation structure” antireflection functional layer having a composition gradient in which the transition metal content and nitrogen content in the film gradually change. ). In addition, it is preferable that the film thickness of a 2nd light-shielding film shall be 10 nm or more and 55 nm or less.

[Third optical film]
The third optical film is also formed using the sputtering apparatus having the configuration shown in FIG. 2 in the same manner as the first and second light-shielding films. As described above, when the third optical film is a halftone phase shift layer, silicon oxide, nitride, or oxynitride, or silicon and transition metal oxide, nitride, or It is preferable to form a film using oxynitride. Therefore, a sputtering target is appropriately selected according to which compound the halftone phase shift layer is formed from, and the film is formed under substantially the same conditions as the second light-shielding film.

  Note that the halftone phase shift layer may be a composite film in which films having different compositions are laminated. The film composition of such a halftone phase shift layer is designed so that the transmittance of a single layer film or multilayer film made of the materials listed above is 2 to 40% and the phase shift amount is about 180 °. Specific film formation examples are as follows.

First, a Si single crystal is used as the first target 102a, and a MoZrSi 4 sintered body is used as the second target 102b. A discharge power of 560 W is applied to the MoZrSi 4 target and 1000 W is applied to the Si target, and the substrate 11 is moved to 30 rpm. Sputter film formation was performed while rotating at 10 to form an optical adjustment layer having a thickness of 10 nm on the substrate 11. The sputtering gas was a mixed gas of Ar with a flow rate of 8 sccm, N 2 with a flow rate of 20 sccm, and O 2 with a flow rate of 5 sccm. The gas pressure in the chamber during sputtering was set to 0.15 Pa.

Next, the discharge power is changed so that the MoZrSi 4 target is 430 W and the Si target is 1000 W, the sputtering gas is changed to a mixed gas of 15 sccm of Ar, 100 sccm of N 2 , and 1 sccm of O 2 , and the substrate 11 is changed. While rotating at 30 rpm, a low-stress layer having a thickness of 40 nm was formed at a gas pressure of 0.25 Pa.

Further, the discharge power was changed so that the MoZrSi 4 target was 100 W and the Si target was 1000 W, the sputtering gas was changed to a mixed gas of 5 sccm of Ar, 50 sccm of N 2 , and 5 sccm of O 2 , and the substrate 11 was changed to 30 rpm. Then, a surface layer having a thickness of 20 nm was formed at a gas pressure of 0.1 Pa.

  As described above, the halftone phase shift layer was configured as a laminated structure including three layers of the optical adjustment layer, the low stress layer, and the surface layer.

[Evaluation of cross-sectional shape of light-shielding film by dry etching]
Using a photomask blank provided with the first and second light-shielding films formed under the conditions described above, the dry-etch cross-sectional shape of the light-shielding film was confirmed. First, a chemically amplified photoresist (thickness: 200 nm) is applied on the second light-shielding film and patterned by electron beam lithography to form a resist mask. Using this as a mask, the second light-shielding film ( Fluorine-based dry etching (SF 6 flow rate 18 sccm, O 2 flow rate 45 sccm, RIE voltage 200 V, ICP power 325 W, chamber internal pressure 5 mTorr) was applied to the antireflection film for patterning.

  At this stage, as a result of observing the cross section of the light-shielding film after patterning with a scanning electron microscope (SEM), the etching to the first light-shielding film (light-shielding film) does not substantially proceed. Was confirmed. From this result, it was confirmed that the second light-shielding film (antireflection film) can be sufficiently used as a hard mask for patterning the first light-shielding film (light-shielding film). It was also confirmed that the first light-shielding film can be sufficiently used as an etching stopper for fluorine-based dry etching.

Subsequently, chlorine-based dry etching (Cl 2 flow rate 18 sccm, O 2 flow rate 55 sccm, He flow rate 10 sccm, RIE voltage 600 V, ICP power 400 W, chamber internal pressure 6 mTorr) is performed on the first light-shielding film. Patterning of all films was completed. After performing such patterning, the cross-sectional shape (presence or absence of occurrence of side etching) was confirmed by SEM observation. The results are summarized in Table 3. In all of the light-shielding films summarized in this table, the thickness of the first light-shielding film (Cr film) is 10 nm, and the thickness of the second light-shielding film (MoSiN / MoSi (N) laminated film). 51 nm.

  FIG. 10 shows that the minimum nitrogen content in the second light-shielding film is 0 at% (FIG. 10A), 5 at% (FIG. 10B), and 10 at% (FIG. 10C), respectively. It is a SEM image for demonstrating the dry etching cross-sectional shape of the light shielding film in the case. As apparent from these SEM images, the state of the cross-sectional shape after dry etching of the light-shielding film (the presence or absence of side etching) depends on the nitrogen content in the second light-shielding film, and the nitrogen content is at least It can be seen that when it is 5 at% or more, the occurrence of side etching is suppressed and a good cross-sectional shape can be obtained. Considering the results so far, the nitrogen content in the second light-shielding film is preferably 5 at% or more and 20 at% or less.

  Table 4 summarizes the results of examining the film thickness dependence of the first light-shielding film and the second light-shielding film in the dry etching cross-sectional shape of the light-shielding film by the same method as described above.

  From the results shown in this table, it can be seen that if the thickness of the first light-shielding film is in the range of 3 to 15 nm, a good etching cross section without occurrence of side etching can be obtained. Considering the results so far, the film thickness of the second light-shielding film may be set to 25 nm or more and 55 nm or less, and the film thickness of the first light-shielding film may be set to 5 nm or more and 15 nm or less. preferable.

[Optical density]
A photomask blank having the first and second light-shielding films formed on the quartz substrate under the above-described conditions is used, and the optical density of the light-shielding film when light is incident on the photomask blank from the substrate side is spectrophotometer Measured with

  FIG. 11 shows a MoSiN second light-shielding film having a film thickness of 51 nm on the first light-shielding film (film thickness 10 nm) of CrN (Cr: N = 9: 1) formed under the above-described conditions. It is a figure which shows the relationship between the optical density (OD) of the provided photomask blank, and minimum nitrogen content. As shown in this figure, in the wide content range where the minimum nitrogen content in the second light-shielding film is 20 at% or less, a value of about 3.0 is obtained as the optical density in light with a wavelength of 193 nm. It can be confirmed that the optical density in ArF exposure can be 2.5 or more.

[Wavelength dependence of reflectance]
FIG. 12 shows the intensity of reflected light measured with a spectrophotometer when light is incident on the photomask blank having the first and second light-shielding films formed under the above-described conditions. It is a figure which shows the result of having measured the wavelength dependence of the reflectance. The measurement wavelength region is in the range of 193 to 600 nm.

  As is clear from the results shown in this figure, in addition to the fact that the reflectance in ArF exposure wavelength (λ = 193 nm) light can be reduced to 10% or less, the inspection wavelength ( The reflectance in the light of (λ = 257 nm) can be in the range of 10 to 20%.

  In this way, the second light-shielding film (antireflection film) is composed of multiple layers, and the nitrogen content is inclined from the layer having a low nitrogen content to the layer having a high nitrogen content. If the film thickness of a layer having a large amount (including an inclined region) is in the range of 15 to 30 nm, the reflectance for light having a wavelength of 257 nm can be set to 10 to 20%, and inspection with a general defect inspection apparatus is possible. Is confirmed to be possible.

[Chemical stability (chemical resistance)]
Chemical stability (chemical resistance) was confirmed using a photomask blank provided with the first and second light-shielding films formed under the conditions described above. Specifically, ammonia overwater (ammonia water: hydrogen peroxide water: water = 1: 1: 30 (volume ratio)) and sulfuric acid overwater (sulfuric acid: hydrogen peroxide water = 4: 1 (volume ratio)) The amount of change in reflectivity after immersion for 1 hour was measured with a spectrophotometer. As a result, the reflectance change at a wavelength of 365 nm was 2% or less under any of the above conditions, and it was confirmed that chemical stability (chemical resistance) sufficient for practical use was exhibited.

  As mentioned above, although the photomask blank of this invention and the photomask produced using this were demonstrated by the Example, the said Example is only an example for implementing this invention, This invention is limited to these. It is not a thing. It is obvious from the above description that various modifications of these embodiments are within the scope of the present invention, and that various other embodiments are possible within the scope of the present invention.

  The present invention provides a photomask in which a fine photomask pattern is formed with high accuracy, and a photomask blank for providing the photomask.

It is the cross-sectional schematic for demonstrating the basic structural example of the photomask blank of this invention. It is a schematic sectional drawing for demonstrating the structure of the sputtering device used for film-forming of the photomask blank of this invention. Wavelength dependence of optical density (OD) of a photomask blank having a second light-shielding film of MoSiN having a thickness of 23.4 nm on a first light-shielding film of CrN (Cr: N = 9: 1) It is a figure which shows sex. It is a figure which shows the result of having measured the reflectance with respect to the light of the wavelength range of 190 nm to 600 nm. It is a figure for demonstrating the manufacturing process of a binary photomask. It is a figure for demonstrating the 1st manufacturing process of a phase shift mask. It is a figure for demonstrating the 2nd manufacturing process of a phase shift mask. It is a figure which shows the result of having measured the wavelength dependence of the optical density of the light shielding film at the time of making light enter from the board | substrate side in the binary photomask blank provided with a chromium compound as a 2nd light shielding film. It is a figure which shows the result of having measured the reflectance with respect to the light of the range of wavelength 190nm to 600nm of the binary photomask blank provided with a chromium compound as a 2nd light shielding film. For explaining the dry etching cross-sectional shape of the light-shielding film when the minimum nitrogen content in the second light-shielding film is 0 at% (a), 5 at% (b), and 10 at% (c), respectively. It is a SEM image. A photomask blank having a second light-shielding film of MoSiN having a film thickness of 51 nm on a first light-shielding film (film thickness of 10 nm) of CrN (Cr: N = 9: 1) in Example 6. It is a figure which shows the relationship between optical density (OD) and minimum nitrogen content. In Example 6, the intensity of the reflected light is measured with a spectrophotometer when light is incident on the photomask blank having the first and second light-shielding films from the light-shielding film side. It is a figure which shows the result of having measured dependence.

11 Substrate 12 Light-shielding film 13 First light-shielding film 14 Second light-shielding film 15 Third optical film (phase shift film)
16 Photoresist film 17 Resist pattern 18 First photoresist film 19 First resist pattern 20 Second resist pattern 101 Chamber 102a First target 102b Second target 103 Sputter gas introduction port 104 Gas exhaust port 105 Substrate rotation Base 106a, 106b Power supply for bias application

Claims (20)

  1. A photomask blank comprising a light-shielding film in which a first light-shielding film and a second light-shielding film are sequentially laminated on a substrate transparent to exposure light,
    The first light-shielding film is composed of a layer having a film thickness of 3 nm to 15 nm mainly composed of chromium (Cr) that is not substantially etched by fluorine-based dry etching,
    It said second light-shielding film is Ri Do the layer mainly composed of a fluorine-based dry etching capable silicon-containing compound,
    A photomask blank , wherein a sum of optical densities of the first light-shielding film and the second light-shielding film is 2.5 or more .
  2.   2. The photo according to claim 1, wherein the silicon-containing compound is an oxide, nitride, or oxynitride of silicon, or an oxide, nitride, or oxynitride of silicon and a transition metal. Mask blank.
  3.   The transition metal includes titanium (Ti), vanadium (V), cobalt (Co), nickel (Ni), zirconium (Zr), niobium (Nb), molybdenum (Mo), hafnium (Hf), tantalum (Ta), The photomask blank according to claim 2, wherein the photomask blank is at least one metal element selected from tungsten (W).
  4.   4. The composition according to claim 2, wherein the silicon-containing compound has a composition in the range of 10 to 95 at% silicon, 0 to 60 at% oxygen, 0 to 57 at% nitrogen, and 0 to 35 at% transition metal. The described photomask blank.
  5.   5. The photomask blank according to claim 1, wherein an optical density of the second light-shielding film with respect to exposure light is 0.2 to 3.0.
  6.   6. The photomask blank according to claim 5, wherein an optical density of the second light-shielding film with respect to exposure light is 0.5 to 2.5.
  7.   7. The photomask blank according to claim 1, wherein a film thickness of the second light-shielding film is 10 nm or more and 55 nm or less.
  8.   8. The photomask blank according to claim 7, wherein the second light-shielding film has a thickness of 25 nm or more and 55 nm or less.
  9.   9. The photomask blank according to claim 1, wherein the nitrogen content of the second light-shielding film is 5 at% or more and 20 at% or less.
  10.   10. The photomask according to claim 1, wherein the extinction coefficient k at the exposure wavelength of the second light-shielding film has a profile that gradually decreases from the substrate side to the surface side. blank.
  11.   The first light-shielding film is a film mainly composed of metallic chromium, chromium oxide, chromium nitride, chromium oxynitride, chromium oxide carbide, chromium nitride carbide, or chromium oxynitride carbide. The photomask blank according to any one of claims 1 to 10.
  12.   The said 1st light-shielding film | membrane is set as the composition of the range of chromium 30-95at%, oxygen 0-60at%, nitrogen 0-50at%, carbon 0-20at%, The Claim 11 characterized by the above-mentioned. Photomask blank.
  13.   The photomask blank according to any one of claims 1 to 12, wherein an optical density of the first light-shielding film with respect to exposure light is 0.3 to 3.0.
  14.   The photomask blank according to claim 13, wherein an optical density of the first light-shielding film with respect to exposure light is 0.5 to 2.0.
  15.   The photomask blank according to claim 1, wherein the first light-shielding film has a thickness of 5 nm to 15 nm.
  16.   The optical density with respect to exposure light of the light-shielding film obtained by sequentially laminating the first light-shielding film and the second light-shielding film is 2.5 or more. Photomask blank.
  17.   17. The photomask blank according to claim 1, wherein at least one of the first light-shielding film and the second light-shielding film has a multilayer structure in which a plurality of layers are sequentially laminated. .
  18.   The photomask blank according to claim 1, wherein the second light-shielding film has an antireflection function.
  19.   The photomask manufactured using the photomask blank of any one of Claims 1 thru | or 18.
  20. A first light-shielding film composed of a layer having a thickness of 3 nm to 15 nm mainly composed of chromium that is not substantially etched by fluorine-based dry etching on a transparent substrate, and a silicon-containing compound capable of fluorine-based dry etching. A light-shielding film in which a second light-shielding film made of a component layer is sequentially laminated, and the light-shielding property has a total optical density of 2.5 or more of the first light-shielding film and the second light-shielding film A method of manufacturing a photomask using a photomask blank provided with a film ,
    A first step of patterning the second light-shielding film by fluorine-based dry etching using a photoresist mask formed on the second light-shielding film;
    A second step of patterning the first light-shielding film by oxygen-containing chlorine-based dry etching using the patterned second light-shielding film or resist film as a mask;
    A method for producing a photomask, comprising:
JP2005220587A 2004-10-22 2005-07-29 Photomask blank, photomask, and manufacturing method thereof Active JP4413828B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004308430 2004-10-22
JP2005220587A JP4413828B2 (en) 2004-10-22 2005-07-29 Photomask blank, photomask, and manufacturing method thereof

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2005220587A JP4413828B2 (en) 2004-10-22 2005-07-29 Photomask blank, photomask, and manufacturing method thereof
TW94131545A TWI375114B (en) 2004-10-22 2005-09-13 Photomask-blank, photomask and fabrication method thereof
CN2005101126192A CN1763632B (en) 2004-10-22 2005-10-11 Photomask blank, photomask and fabrication method thereof
EP20050022691 EP1650600B1 (en) 2004-10-22 2005-10-18 Photomask blank, photomask and fabrication method thereof
EP20080004173 EP1936437B1 (en) 2004-10-22 2005-10-18 Photomask blank, photomask and fabrication method thereof
DE200560017861 DE602005017861D1 (en) 2004-10-22 2005-10-18 Photomask blank, photomask and their method of preparation
KR1020050099108A KR101204632B1 (en) 2004-10-22 2005-10-20 Photomask-blank, photomask and fabrication method thereof
US11/255,135 US7625676B2 (en) 2004-10-22 2005-10-21 Photomask blank, photomask and fabrication method thereof
SG200506807-7A SG130985A1 (en) 2004-10-22 2005-12-15 Photomask blank, phtomask and fabrication method thereof
KR1020120079395A KR101374498B1 (en) 2004-10-22 2012-07-20 Photomask-blank, photomask and fabrication method thereof

Publications (2)

Publication Number Publication Date
JP2006146152A JP2006146152A (en) 2006-06-08
JP4413828B2 true JP4413828B2 (en) 2010-02-10

Family

ID=36625870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005220587A Active JP4413828B2 (en) 2004-10-22 2005-07-29 Photomask blank, photomask, and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP4413828B2 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4509050B2 (en) * 2006-03-10 2010-07-21 信越化学工業株式会社 Photomask blank and photomask
JP5294227B2 (en) 2006-09-15 2013-09-18 Hoya株式会社 Mask blank and transfer mask manufacturing method
JP4872737B2 (en) * 2007-03-20 2012-02-08 大日本印刷株式会社 Phase shift mask manufacturing method and phase shift mask
JP5217345B2 (en) * 2007-10-05 2013-06-19 大日本印刷株式会社 Photomask and photomask blanks
JP5393972B2 (en) * 2007-11-05 2014-01-22 Hoya株式会社 Mask blank and transfer mask manufacturing method
JP5581293B2 (en) * 2008-02-27 2014-08-27 Hoya株式会社 Photomask blank and manufacturing method thereof, and photomask and manufacturing method thereof
TWI572972B (en) * 2008-03-31 2017-03-01 Hoya股份有限公司 Photo mask blank, photo mask and manufacturing method for semiconductor integrated circuit
JP5323526B2 (en) * 2008-04-02 2013-10-23 Hoya株式会社 Phase shift mask blank and method of manufacturing phase shift mask
JP5281362B2 (en) * 2008-10-31 2013-09-04 Hoya株式会社 Photomask blank, photomask and manufacturing method thereof
JP4941684B2 (en) * 2009-03-27 2012-05-30 信越化学工業株式会社 Photomask blank and processing method thereof
WO2010113475A1 (en) * 2009-03-31 2010-10-07 Hoya株式会社 Mask blank and transfer mask
WO2010113787A1 (en) * 2009-03-31 2010-10-07 Hoya株式会社 Mask blank and method for manufacturing transfer mask
JP5201361B2 (en) * 2009-05-15 2013-06-05 信越化学工業株式会社 Photomask blank processing method
JP5257256B2 (en) 2009-06-11 2013-08-07 信越化学工業株式会社 Photomask manufacturing method
KR101751542B1 (en) * 2009-10-06 2017-06-27 호야 가부시키가이샤 Mask blank, transfer mask and transfer mask set
JP5666218B2 (en) * 2009-10-06 2015-02-12 Hoya株式会社 Mask blank, transfer mask, and transfer mask set
JP5704754B2 (en) 2010-01-16 2015-04-22 Hoya株式会社 Mask blank and transfer mask manufacturing method
WO2012043695A1 (en) 2010-09-30 2012-04-05 Hoya株式会社 Mask blank, method for producing same, and transfer mask
JP6028319B2 (en) * 2011-09-26 2016-11-16 凸版印刷株式会社 Photomask blank, method for producing the same, and method for producing photomask
JP4978748B2 (en) * 2011-12-20 2012-07-18 信越化学工業株式会社 Etching method
JP5701946B2 (en) * 2013-08-14 2015-04-15 Hoya株式会社 Method for manufacturing phase shift mask
JP5829302B2 (en) * 2014-04-18 2015-12-09 Hoya株式会社 Photomask blank manufacturing method and photomask manufacturing method
CN106200256A (en) * 2014-08-25 2016-12-07 株式会社S&Stech Phasing back blank mask and photomask
JP6544300B2 (en) * 2015-08-31 2019-07-17 信越化学工業株式会社 Halftone phase shift photomask blank, method of manufacturing the same, and halftone phase shift photomask
JP6451561B2 (en) * 2015-09-03 2019-01-16 信越化学工業株式会社 Photomask Blank
JP6341166B2 (en) * 2015-09-03 2018-06-13 信越化学工業株式会社 Photomask Blank

Also Published As

Publication number Publication date
JP2006146152A (en) 2006-06-08

Similar Documents

Publication Publication Date Title
JP5711830B2 (en) Phase shift mask blank, phase shift mask, and method of manufacturing phase shift mask blank
US9075314B2 (en) Photomask blank, photomask, and method for manufacturing photomask blank
KR101283960B1 (en) Photomask blank
CN104635415B (en) Half-tone phase shift photomask blank, half-tone phase shift photomask and pattern exposure method
US8323858B2 (en) Photomask blank, photomask, and methods of manufacturing the same
KR101936976B1 (en) Photomask blank, photomask, and making method
TWI559075B (en) Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask
US8048596B2 (en) Photomask producing method and photomask blank
TWI522728B (en) A mask substrate and its manufacturing method and transfer mask
EP1746460B1 (en) Photomask blank, photomask and fabrication method thereof
DE10165034B4 (en) Halftone phase shift mask and mask blank
US8293435B2 (en) Photomask blank, photomask, and methods of manufacturing the same
JP5175932B2 (en) Phase shift mask blank and phase shift mask
KR101681335B1 (en) Photomask blank, photomask, process for producing same, and process for producing semiconductor device
US7622227B2 (en) Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof
US7989124B2 (en) Photomask blank and photomask making method
KR100597655B1 (en) Half-tone type phase shift mask blank and half-tone type phase shift mask
EP1811335B1 (en) Method for producing a photomask
EP1321820B1 (en) Halftone phase shift photomask and blank for halftone phase shift photomask
US8283092B2 (en) Photomask blank, photomask, and photomask manufacturing method
KR101575759B1 (en) Mask blank Method of manufacturing an exposure mask and Method of manufacturing an imprint template
TWI390338B (en) Half-tone stacked film, photomask-blank, photomask and fabrication method thereof
TWI397766B (en) A manufacturing method of a mask blank and a mask, and a method of manufacturing the semiconductor device
US8980503B2 (en) Binary photomask blank and binary photomask making method
US8268515B2 (en) Mask blank and method of manufacturing a transfer mask

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060829

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090310

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090501

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090623

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090821

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20091006

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091110

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091118

R150 Certificate of patent or registration of utility model

Ref document number: 4413828

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121127

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121127

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121127

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121127

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131127

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250