JP4377296B2 - Deposition equipment - Google Patents

Description

  The present invention relates to a film forming apparatus for forming a film on a surface of a processing substrate by using a source gas composed of at least a first source gas and a second source gas.

  For example, in a film forming apparatus for forming a ZnO epitaxial film used for a light emitting element such as a white light emitting diode (LED), a plurality of source gases, that is, an O source gas and a Zn source gas are reacted to form ZnO on a processing substrate. A film is being formed.

  In the above-described film forming apparatus, the source gas is blown from the gas supply port to the processing substrate mounted in the apparatus. In this case, each source gas is guided to the supply port through the separated flow path so that a plurality of source gases (O source gas, Zn source gas, etc.) do not react until reaching the supply port. However, if the sealing state of the flow path is insufficient, the raw material gas reacts before reaching the supply port, and a crystal film (ZnO crystal film) is formed on the inner surface of the flow path. The crystallinity with respect to the substrate deteriorates, leading to a decrease in film growth rate and particle deposition.

  Even if a plurality of source gases flow out from the supply port toward the processing substrate, the source gas reacts before reaching the processing substrate from the supply port, so the amount of source gas consumed for film formation on the processing substrate is small. As a result, the amount of the source gas used is extremely large, and the film formation time is also long.

In particular, when a ZnO film is formed using an O source gas (O ₂ , H ₂ O, N ₂ O, etc.), the O source gas easily reacts with other gases in the gas phase. On top of that, a good quality crystal film cannot be obtained. Furthermore, since the reactivity is high even when the reaction chamber is in a high vacuum state, it is difficult to solve the above problem. Furthermore, if the reaction chamber is in a low vacuum state, higher reactivity will appear and the above problem will be more difficult to solve.

  Furthermore, since the supply port is disposed at a position that is susceptible to radiant heat from the processing substrate, the raw material gas that has just exited the supply port immediately starts a reaction, causing the crystallinity on the processing substrate to deteriorate. Yes.

On the other hand, in the reaction chamber, a plurality of source gases flow toward the processing substrate and a phenomenon of attracting the flowing source gases by the exhaust operation is mixed. Therefore, since the source gas generates a reaction product in the vicinity of the processing substrate while not performing the film formation function, the crystallinity deterioration in the processing substrate, the film growth rate decreases, the particle Deposition occurs.
Japanese Patent No. 3198956 JP-A-1-101623

  In order to form a good quality crystal film on the processing substrate, the sealing state of the flow path of the source gas in the film forming apparatus is made perfect, and a plurality of source gases do not react in the flow path process. Must do so. In addition, it is necessary to prevent early reaction from occurring from the source gas supply port to the processing substrate. Furthermore, it is important to dispose the source gas supply port at a location where the influence of radiant heat from the processing substrate can be minimized. Then, the behavior of the raw material gas in the reaction chamber must be prevented from being hindered by exhaust suction.

  The present invention has been made in view of the above circumstances, and prevents a plurality of source gases from reacting before performing a film forming function on a processing substrate, thereby minimizing the influence of radiant heat from the processing substrate. It is another object of the present invention to provide a film forming apparatus capable of making the gas behavior in the reaction chamber better for crystal film formation.

In order to achieve the above object, a first film forming apparatus of the present invention provides a plurality of source gases composed of at least a first source gas and a second source gas on the surface of a heated processing substrate disposed in a processing chamber. A film forming apparatus for forming a film by reacting, wherein the processing chamber is divided into a heating chamber and a reaction chamber by at least a processing substrate, and a source gas is disposed at a position facing the processing substrate exposed in the reaction chamber. Each supply of the 1st source gas and the 2nd source gas which are provided in the state where the exhaust pipe continued in the reaction room, and supplies the 1st source gas and the 2nd source gas to the surface of the above-mentioned processing substrate independently, respectively The gist of the invention is that the opening is disposed outside the exhaust pipe , and a wall for reducing the space on the outer peripheral side of the reaction chamber is provided on the outer peripheral side of each of the supply ports .
In order to achieve the above object, a second film forming apparatus of the present invention provides a plurality of source gases composed of at least a first source gas and a second source gas on the surface of a heated processing substrate disposed in a processing chamber. A film forming apparatus for forming a film by reacting, wherein the processing chamber is divided into a heating chamber and a reaction chamber by at least a processing substrate, and a source gas is disposed at a position facing the processing substrate exposed in the reaction chamber. Each supply of the 1st source gas and the 2nd source gas which are provided in the state where the exhaust pipe continued in the reaction room, and supplies the 1st source gas and the 2nd source gas to the surface of the above-mentioned processing substrate independently, respectively The outlet is arranged so as to be located outside of the exhaust pipe, and each of the supply ports constitutes a part of the reaction chamber and expands toward the processing substrate and continues to the exhaust pipe. The gist is that it is provided on the annular member That.
In order to achieve the above object, a third film forming apparatus of the present invention provides a plurality of source gases composed of at least a first source gas and a second source gas on the surface of a heated processing substrate disposed in a processing chamber. A film forming apparatus for forming a film by reacting, wherein the processing chamber is divided into a heating chamber and a reaction chamber by at least a processing substrate, and a source gas is disposed at a position facing the processing substrate exposed in the reaction chamber. Each supply of the 1st source gas and the 2nd source gas which are provided in the state where the exhaust pipe continued in the reaction room, and supplies the 1st source gas and the 2nd source gas to the surface of the above-mentioned processing substrate independently, respectively The gist of the invention is that a gas diffusion chamber is arranged in an annular shape so that the port is located outside the exhaust pipe and the source gas is distributed to the supply ports.
In order to achieve the above object, a fourth film forming apparatus of the present invention provides a plurality of source gases composed of at least a first source gas and a second source gas on the surface of a heated processing substrate disposed in a processing chamber. A film forming apparatus for forming a film by reacting, wherein the processing chamber is divided into a heating chamber and a reaction chamber by at least a processing substrate, and a source gas is disposed at a position facing the processing substrate exposed in the reaction chamber. Each supply of the 1st source gas and the 2nd source gas which are provided in the state where the exhaust pipe continued in the reaction room, and supplies the 1st source gas and the 2nd source gas to the surface of the above-mentioned processing substrate independently, respectively The processing substrate is disposed so that the port is located outside the exhaust pipe and the surface of the processing substrate is substantially perpendicular to the outflow direction of the source gas from each supply port. This is the gist.

  That is, in the film forming apparatus of the present invention, the processing chamber is divided into a heating chamber and a reaction chamber at least by the processing substrate, and the source gas exhaust pipe reacts with the processing substrate exposed to the reaction chamber. Each supply port of the first source gas and the second source gas, which is provided in a continuous state in the chamber and supplies the first source gas and the second source gas in an independent state to the surface of the processing substrate, It arrange | positions so that it may be located outside rather than an exhaust pipe.

  For this reason, the heating chamber and the reaction chamber are divided at least by the processing substrate, and the first source gas and the second source gas that have reached the processing substrate flow into the heating chamber and other places after the formation of the crystal film. Therefore, the reaction product does not adhere to unnecessary portions other than the processing substrate. Further, after the formation of the crystal film, since the exhaust gas is immediately sucked from the exhaust pipe facing the processing substrate, the flow of the source gas becomes orderly and the circulation property is improved.

  Further, since the supply ports of the first source gas and the second source gas are located outside the exhaust pipe, the radiant heat from the processing substrate hardly reaches the supply ports. As a result, the temperature in the vicinity of each supply port is lowered, and even if a part of each source gas is mixed, a temperature condition that is difficult to react until reaching the processing substrate is formed, which is used for forming a crystal film. The amount of raw material gas can be increased. In other words, the arrangement locations of the supply ports open to the reaction chamber outside the virtual space obtained by extending the flow path space of the exhaust pipe to the reaction chamber side.

  Since the first source gas and the second source gas separately flow out from the respective supply ports, the amount to be mixed is reduced even during the flow, and the reaction is started to be very small before reaching the processing substrate. The Then, both raw material gases sprayed on the processing substrate cause a turbulent flow and start a reaction at a location closest to the processing substrate. Crystal reaction films are generated over the entire area of the processing substrate while reaction products resulting from this reaction expand in the circumferential direction and the central direction of the processing substrate. Thus, almost all of the source gas flowing out from each supply port is used for forming a crystal film, and then flows out from the vicinity of the center of the processing substrate toward the exhaust pipe.

In the first film forming apparatus of the present invention, a wall for reducing the space on the outer peripheral side of the reaction chamber is provided on the outer peripheral side of each of the supply ports. The amount of the source gas can be reduced, the crystallinity of the processing substrate can be improved, and the film growth rate can be increased. Further, by changing the direction of the wall, it is possible to function as a current plate for both raw material gases, and a good gas flow with respect to the processing substrate can be obtained.

The second film forming apparatus of the present invention further includes an annular member in which each of the supply ports constitutes a part of the reaction chamber and expands toward the processing substrate and continues to the exhaust pipe. Therefore, each supply port can be placed in a place where it is difficult to receive radiant heat from the processing substrate, the temperature near each supply port becomes low, and even if a part of each source gas is mixed, Until the temperature reaches, a temperature condition that hardly reacts is formed, and the amount of source gas used for forming the crystal film can be increased.

In the third film forming apparatus of the present invention, since the gas diffusion chamber for distributing the source gas to the supply ports is provided in an annular shape, the first source gas and the second source gas are each gas. The raw material gas can be supplied to each supply port through a flow path independent from the diffusion chamber. Therefore, since the flow paths of both source gases are completely separated from each gas diffusion chamber to each supply port, there is no reaction on the way. Furthermore, since the gas diffusion chamber has an annular shape, positional correspondence with the annular member provided with each supply port is improved, piping from the gas diffusion chamber to the supply port is simplified, and The lengths of the pipes can be made uniform, and the amount of gas flowing out from the supply ports can be easily made uniform.

In the fourth film forming apparatus of the present invention, since the processing substrate is arranged so that the surface of the processing substrate is substantially perpendicular to the flow direction of the source gas from each supply port, each source gas Reaches the processing substrate from the direction most effective for the formation of the reaction product, so that the crystallinity becomes remarkably good.

In the film forming apparatus of the present invention, each shape of the substrate arrangement region where the processing substrate is arranged and the cross section of the exhaust pipe continuing to the reaction chamber is substantially circular, and the center of the substrate arrangement region is the exhaust gas. When arranged on the center line of the tube, after the first source gas and the second source gas flowing out from the respective supply ports form a film on the processing substrate, they are exhausted from a substantially central portion of the substrate arrangement region. Suction and exhaust can be performed toward the pipe.

In the film forming apparatus of the present invention, when each of the supply ports is alternately arranged on the circumference, the first source gas and the second source gas alternately reach a predetermined position on the processing substrate, and the processing is performed. The reaction of both source gases performed in the immediate vicinity of the substrate is made uniform for each reaction site of the processing substrate, which is effective for uniform film formation quality.

In the film forming apparatus of the present invention, when the supply ports are arranged at equal intervals, the first source gas and the second source gas regularly reach a predetermined position on the processing substrate at equal intervals, and the film is formed. It is more effective for quality uniformity.

  In the film forming apparatus of the present invention, when the cross-sectional area of the exhaust pipe is larger than the width of the substrate arrangement area where the processing substrate exposed in the reaction chamber is arranged, After the first raw material gas and the second raw material gas are formed on the processing substrate, suction and exhaust can be performed from the substantially central portion of the substrate arrangement region toward the exhaust pipe. In particular, even when a plurality of processing substrates are arranged in the substrate arrangement region and film formation is performed on each processing substrate at the same time, suction and exhaust can be performed from the center of the substrate arrangement region after the film formation with the source gas is completed. This is effective for improving the film growth rate.

In the film forming apparatus of the present invention, when the exhaust pipe is arranged inside the gas diffusion chamber, the exhaust pipe is arranged inside the annular gas diffusion chamber. And the structural unit is good, and the film forming apparatus can be made compact.

  Next, the best mode for carrying out the present invention will be described.

  1 to 4 show an embodiment of a film forming apparatus of the present invention.

  FIG. 1 is a cross-sectional view showing the overall structure of the film forming apparatus. 2 is a cross-sectional view of [2]-[2] in FIG. In this apparatus, a separation plate 3 is provided in a processing container 2 whose inside is a processing chamber 1, and a plate-like sapphire substrate 5 which is a processing substrate in a state of being matched with a circular opening 4 opened in the separation plate 3. Is placed. A heater H is disposed above the back surface of the sapphire substrate 5, and a heating chamber 1 a is formed in a state surrounded by the reflector 8 of the heater H. The processing chamber 1 below the separation plate 3 and the sapphire substrate 5 is a reaction chamber 1b to which various processing gases are supplied. A vacuum pump (not shown) for evacuating the processing chamber 1 is disposed so that the processing chamber 1 is evacuated from the exhaust port 6. In addition, when the sapphire substrate 5 has a large area, the heating chamber 1a and the reaction chamber 1b can be separated only by the sapphire substrate 5.

  In order to form the reaction chamber 1b, an annular member to be described later, connection of an exhaust pipe, a cooling chamber, and the like, an annular box 13 is disposed at a location close to the separation plate 3. A reaction chamber 1 b is formed inside the annular box 13. As shown in FIG. 1, the reaction chamber 1 b is a space arranged immediately below the sapphire substrate 5, and is connected to an exhaust pipe 7 communicating with the exhaust port 6. That is, the exhaust pipe 7 extends downward from the inner opening of the annular box 13. The cross section of the flow path of the exhaust pipe 7 is circular as shown in FIG. 2, and reference numeral 7 a indicates the circular inner surface shape of the exhaust pipe 7. The center of the circular sapphire substrate 5 exposed to the reaction chamber 1 b through the opening 4 substantially coincides with the center line OO of the exhaust pipe 7. Further, the center line OO is perpendicular to the flat sapphire substrate 5.

  In this embodiment, the center of one sapphire substrate 5 coincides with the center line OO, and the place where the sapphire substrate 5 is arranged is a substrate arrangement region. In this example, since there is one sapphire substrate 5, the substrate arrangement region is a single circle, and the center of this circular portion is arranged on the center line OO of the exhaust pipe 7.

  The diameter of the circular sapphire substrate 5 exposed in the reaction chamber 1b is indicated by reference numeral D1, as shown in FIGS. The inner diameter of the exhaust pipe 7 is indicated by reference sign D2. And the magnitude | size of the said diameter and an internal diameter is set to the relationship of D2> D1.

  The members that define the reaction chamber 1 b are mainly the annular member 9 and the wall plate member 10. The annular member 9 is a tapered member having one end continuous to the exhaust pipe 7 and the other end expanded toward the sapphire substrate 5. The wall plate member 10 is a partition member for reducing the space on the outer peripheral side of the reaction chamber 1b, that is, reducing the dead space of the reaction chamber 1b, and the inner wall 10a reduces the space. Is functioning. As shown in FIG. 2, the wall plate member 10 is a short cylindrical member concentric with the center line OO, and the annular member 9 is also concentric with the center line OO. Yes. Therefore, the reaction chamber 1b is a space having a circular cross section in FIG. 1, and the center line OO passes through the center of the reaction chamber 1b.

The raw material gases in this embodiment are an O raw material gas and a Zn raw material gas, and O ₂ , H ₂ O, N ₂ O, etc. are used as the O raw material gas. Further, DEZn (diethylzinc) is used as the Zn source gas.

  A supply port 11 through which the O source gas, that is, the first source gas flows out toward the sapphire substrate 5, and a supply port 12 through which the Zn source gas, that is, the second source gas flows out toward the sapphire substrate 5, are provided in the annular member 9. Opened. Each supply port 11, 12 is arranged so as to be located outside the exhaust pipe 7. That is, a virtual space having the same diameter as the inner diameter D2 of the exhaust pipe 7 is extended to the reaction chamber 1b side, and supply ports 11 and 12 are provided in the annular member 9 outside the virtual space.

  As shown in FIG. 2, each of the supply ports 11 and 12 is arranged side by side in the diameter direction of the annular member 9 for each gas supply. The supply port 11 and the supply port 12 are arranged alternately at equal intervals on the circumference of the annular member 9. In FIG. 2, only the supply port 12 is painted with a pear ground to facilitate the identification of the supply ports 11 and 12. In addition, each supply port 11 and 12 is good also considering one gas supply as one supply port or three or more supply ports.

  The annular box 13 is continuous with the annular member 9, a flat plate-like upper annular plate 13a continuous therewith, a cylindrical plate 13b continuous with the outer peripheral portion of the upper annular plate 13a, and an outer peripheral portion of the cylindrical plate 13b. The plate-like lower annular slope 13 c and a part of the exhaust pipe 7 are configured. An annular support member 7b is coupled to the lower portion of the exhaust pipe 7, and the lower portion is fixed to a highly rigid annular substrate 14 having a large thickness. Accordingly, a structure in which the annular box 13 having the reaction chamber 1b, the supply ports 11, 12 and the like is firmly coupled to the substrate 14 through the exhaust pipe 7 and the support member 7b is formed, so that a highly rigid film forming apparatus is formed. Is obtained. Since the processing container 2 is also coupled to the substrate 14, the relative position between the separation slope 3 and the opening 4 formed in a part of the processing container 2 and the reaction chamber 1b can be set accurately, and the sapphire substrate 5 The reaction gas with respect to correctly reaches, and good film formation is possible.

  As shown in FIGS. 4A and 1, annular tubes 15a and 16a having annular gas diffusion chambers 15 and 16 are coupled to the lower annular plate 13c. Both of the annular tubes 15a and 16a are arranged with a large diameter and a small diameter inside and outside, but they may be arranged vertically with the same diameter. And the exhaust pipe 7 has penetrated the inside of the said annular pipes 15a and 16a. A supply pipe 17 for a first source gas (O source gas) inserted from the outside to the inside of the apparatus is connected to the gas diffusion chamber 15, and similarly, a second source gas (Zn) inserted from the outside to the inside of the apparatus. A feed pipe 18 of the source gas) is connected to the gas diffusion chamber 16. A plurality of supply pipes 19 extending from the annular tube 15 a pass through the inside of the annular box 13 and are divided into two forks to reach the supply port 11. The bifurcated duct is indicated by reference numeral 19a. Similarly, a plurality of supply pipes 20 extending from the annular pipe 16 a pass through the inside of the annular box 13 and are divided into two forks to reach the supply port 12. The bifurcated conduit is indicated by reference numeral 20a. As shown in FIG. 4B, the gas diffusion chambers 15 and 16 are formed by integrally forming annular pipes 15a and 16a with annular casting parts, and the inner and outer grooves are used as the gas diffusion chambers 15 and 16, respectively. Can do.

  As shown in FIGS. 1 and 3, a partition plate 21 having substantially the same shape as that of the annular member 9 is coupled to the back of the annular member 9, and a cooling jacket 22 that introduces a coolant between the annular member 9 and the partition plate 21. Is formed. The bifurcated pipes 19a and 20a are connected to a straight conduit 23 that crosses the cooling jacket 22 in a sealed state, and the supply ports 11 and 12 are formed by openings of the conduit 23. As the raw material gas flows out from the conduit 23, the directivity of the gas flow in the reaction chamber 1b is formed.

  A cooling jacket 24 is formed on the outer periphery of the exhaust pipe 7. An inflow pipe 25 is connected to the cooling jacket 24 from the outside of the apparatus, the cooling jacket 24 and the cooling jacket 22 are connected by a connection pipe 26, and an outflow pipe 27 connected to the cooling jacket 22 protrudes outside the apparatus. The cooling liquid entering from the inflow pipe 25 cools the gas in the exhaust pipe 7 by the cooling jacket 24 and further flows into the cooling jacket 22 to cool the bifurcated pipe lines 19a and 20a and the reaction chamber 1b. Then, it flows out from the outflow pipe 27 to the outside.

  It is as follows when the effect of the said Example is listed.

  The first source gas and the second source gas are separately fed from the independent supply pipes 17 and 18 to the gas diffusion chambers 15 and 16 and supplied from the gas diffusion chambers 15 and 16 through individual supply pipes 19 and 20, respectively. It is sent to the mouths 11 and 12. Therefore, since the flow paths of both source gases are completely separated from the supply pipes 17 and 18 to the supply ports 11 and 12, there is no reaction in the process.

  The first source gas and the second source gas separately flowing out from the supply ports 11 and 12 are given directivity in the outflow direction by the conduit 23. For this reason, the first raw material gas and the second raw material gas that have flowed out of the supply ports 11 and 12 start to react very little before reaching the sapphire substrate 5. The outflow direction of both source gases is preferably the outer peripheral side of the sapphire substrate 5, and both source gases blown near the outer periphery of the sapphire substrate 5 cause a turbulent flow and start a reaction at a location closest to the sapphire substrate 5. To do. Crystalline film formation is generated over the entire area of the sapphire substrate 5 while reaction products resulting from this reaction expand in the circumferential direction and the center direction of the sapphire substrate 5. Thus, almost all of the source gas flowing out from the supply ports 11 and 12 is used for forming a crystal film, and then flows out from the vicinity of the center of the sapphire substrate 5 toward the exhaust pipe 7.

  Furthermore, the supply ports 11 and 12 for the first source gas and the second source gas open to the reaction chamber 1b outside the virtual space extended to the reaction chamber 1b side of the exhaust pipe 7. Therefore, since the radiant heat from the sapphire substrate 5 hardly reaches the supply ports 11 and 12, the temperature near the supply ports 11 and 12 is lowered, and even if a part of each source gas is mixed, the sapphire substrate 5 Until the temperature reaches, a temperature condition that is difficult to react is formed, and the amount of source gas used for the formation of the crystal film can be increased.

  Since the heating chamber 1a and the reaction chamber 1b are separated by the separation plate 3 and the sapphire substrate 5, both source gases that have reached the sapphire substrate 5 flow into the heating chamber 1a and other places after the crystal film is formed. Therefore, the reaction product does not adhere to unnecessary portions other than the sapphire substrate 5. In addition, since the crystalline film is immediately sucked by the exhaust flow, the circulation property of the source gas is improved.

  Since the space on the outer peripheral side of the reaction chamber 1b is reduced by the wall 10a, the amount of both source gases that do not function effectively in the reaction chamber 1b can be reduced, and the crystallinity of the sapphire substrate 5 is improved and the film is improved. Can increase the growth rate.

  Moreover, since each supply port 11 and 12 is arrange | positioned alternately at equal intervals in the circumferential direction, 1st source gas and 2nd source gas arrive at the predetermined location of the sapphire substrate 5 alternately regularly, and sapphire The reaction of both source gases performed in the immediate vicinity of the substrate 5 is made uniform for each reaction site of the sapphire substrate 5, which is effective for uniform film formation quality.

  Since the supply ports 11 and 12 are provided in the taper-shaped annular member 9 that expands toward the sapphire substrate 5, the supply ports 11 and 12 can be disposed at a place that is difficult to receive radiant heat from the sapphire substrate 5. Thus, the temperature conditions near the supply ports 11 and 12 are lowered, and even when a part of each source gas is mixed, a temperature condition that is difficult to react until reaching the sapphire substrate 5 is formed, thereby forming a crystal film. The amount of the raw material gas used for the process can be increased.

  The first source gas and the second source gas feed the source gas to the supply ports 11 and 12 through the supply pipes 19 and 20 independent of the gas diffusion chambers 15 and 16, respectively. Therefore, since the flow paths of both source gases are completely separated from the gas diffusion chambers 15 and 16 to the supply ports 11 and 12, there is no reaction on the way. Furthermore, since the shape of the member forming the gas diffusion chambers 15 and 16 is the annular pipes 15a and 16a, the positional correspondence with the annular member 9 provided with the supply ports 11 and 12 is good, The piping from the gas diffusion chambers 15 and 16 to the supply ports 11 and 12 is simplified, and the length of each of the pipings can be made uniform, so that the amount of gas flowing out from the supply ports 11 and 12 can be made uniform easily. Become.

For example, the average free path of Zn source gas (DEZn gas) molecules in a high vacuum of 10 ^{−3 to 1} Pa (10 ⁻⁵ to 10 ⁻² Torr) is about 50 to 100 mm. It is required to suppress the reaction with the O source gas (O ₂ , H ₂ O, N ₂ O, etc.) as much as possible before reaching the sapphire substrate 5 from the supply ports 11 and 12. For this reason, it is desirable to set the mean free path of the Zn source gas as large as possible within the range of the vacuum pressure as long as the reactivity is not hindered. Specifically, the mean free path is preferably 50 mm or more, more preferably 70 mm or more, and still more preferably 100 mm or more.

  On the other hand, the Zn source gas decomposes at 200 to 300 ° C. and condenses when cooled, so cooling control of the cooling jacket 22 and the like is performed so that the temperature of the Zn source gas is around 100 ° C.

  In addition, the annular box 13 is structured as a core structure on the structure, such as the arrangement of the annular member 9, the arrangement of the supply ports 11 and 12, the formation of the cooling jacket 22, and the attachment of the annular tubes 15a and 16a. Therefore, the structure of the most important functional part of the film forming apparatus can be formed in a compact and integrated state.

  FIG. 5 shows a second embodiment of the film forming apparatus of the present invention.

  In this embodiment, the shape of the annular wall plate member 10 is a tapered type in which the sapphire substrate 5 side has a small diameter. Other than that, it is the same as that of the said Example, and attaches | subjects the same code | symbol to the same part.

  With the above configuration, the space on the outer peripheral side of the reaction chamber 1 b is further reduced, and the gas flow from the supply ports 11 and 12 is rectified by the wall 10 a of the wall plate member 10, and a good gas flow is generated on the surface of the sapphire substrate 5. High quality film formation can be performed by interfering with. Other than that, there exists an effect similar to the said Example.

  6 to 9 show a third embodiment of the film forming apparatus of the present invention.

  In this embodiment, eight sapphire substrates 5 are arranged in the substrate arrangement region. For that purpose, eight openings 4 are provided on the circumference of the separating plate 3. The region where the sapphire substrate 5 is disposed is a circular region, and its center exists on the center line OO. As shown in FIG. 7, the separation plate 3 is circular and rotates around the center line OO. The so-called revolution in which the entire separation plate 3 rotates can be performed by various drive mechanisms. For example, although not shown, a shaft is coupled to the central portion of the separation plate 3 and the shaft is driven to rotate. Furthermore, the cross-sectional area of the exhaust pipe 7 is set larger than the area of the substrate arrangement region where the sapphire substrate 5 exposed in the reaction chamber 1b is arranged.

  Further, as shown in FIGS. 8 and 9, so-called rotation in which the sapphire substrate 5 itself rotates may be added to the revolution. Various rotation driving mechanisms can be employed in this case. For example, as shown in FIG. 9, the separation plate 3 is rotated by a revolving gear 28, while the sun gear 29 disposed in the center is used as a rotating gear mechanism. The planetary gears 30 are engaged with each other, and the opening 4 is provided in each planetary gear 30, and the sapphire substrate 5 is disposed here. When the gear 28 is rotated, the entire separation plate 3 is revolved, and each planetary gear 30 is rotated at the same time, so that the sapphire substrate 5 is rotated. Other than that, it is the same as that of each said Example, and attaches | subjects the same code | symbol to the same part.

  With the above-described configuration, the plurality of sapphire substrates 5 revolve or rotate and revolve so that the source gas uniformly interferes with each sapphire substrate 5, and the sapphire substrate 5 is formed with good quality without variation. Made. Further, after the first source gas and the second source gas flowing out from the supply ports 11 and 12 are formed on the sapphire substrate 5, the exhaust gas is sucked and exhausted from the substantially central portion of the substrate arrangement region toward the exhaust pipe 7. In particular, when a plurality of sapphire substrates 5 are arranged in the substrate arrangement region and the sapphire substrates 5 are simultaneously formed into a film, suction is performed from the center of the substrate arrangement region after the film formation with the source gas is completed. Exhaust is possible and effective for improving crystallinity and film growth rate. Other than that, there exists an effect similar to each said Example.

  FIG. 10 shows a fourth embodiment of the film forming apparatus of the present invention.

  In this embodiment, the sapphire substrate 5 is arranged so that the surface of the sapphire substrate 5 is substantially perpendicular to the flow direction of the source gas from the supply ports 11 and 12. For this purpose, a conical separation plate 3a facing the tapered annular member 9 is provided, and a sapphire substrate 5 is attached to the conical separation plate 3a, and the surface of the substrate 5 is a raw material from each of the supply ports 11 and 12. The inclination angle of the separation plate 3a is set so as to be substantially perpendicular to the gas outflow direction. Further, since the sapphire substrate 5 is arranged in such a manner, the reaction chamber 1b also has a tapered space shape. Other than that, it is the same as that of each said Example, and attaches | subjects the same code | symbol to the same part.

  With the above configuration, each source gas reaches the sapphire substrate 5 from the direction most effective for the formation of the reaction product, so that the crystallinity is remarkably good. Further, since the sapphire substrate 5 is disposed on the conical separation plate 3 a and is inclined with respect to the direction of the exhaust pipe 7, the gas exhaust after film formation flows out smoothly toward the exhaust pipe 7.

  Since a plurality of source gas supply ports are provided at locations where it is difficult to receive radiant heat from the processing substrate, and after the formation of a crystal film, suction and exhaust are performed toward the exhaust pipe, the amount of source gas to be formed is significantly increased. The Since the crystallinity is good and the film growth time is shortened in this way, it can be expected to be highly applicable in this type of industrial field.

It is sectional drawing of the film-forming apparatus which shows one Example of this invention. It is [2]-[2] sectional drawing of FIG. It is sectional drawing which shows a part of cooling jacket. It is the perspective view and sectional drawing which show a gas diffusion chamber independently. It is sectional drawing of the film-forming apparatus which shows a 2nd Example. It is sectional drawing of the film-forming apparatus which shows a 3rd Example. It is [7]-[7] sectional drawing of FIG. It is sectional drawing of the separator plate which set the some sapphire board | substrate. It is sectional drawing which shows simply the drive mechanism of revolution and rotation of a sapphire substrate. It is a simple sectional view of a film deposition system showing the 4th example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Processing chamber 1a Heating chamber 1b Reaction chamber 2 Processing container 3 Separation plate 3a Conical separation plate 4 Opening 5 Processing substrate, sapphire substrate 6 Exhaust port 7 Exhaust pipe 7a Inner surface 7b Support member H Heating heater 8 Reflector 9 Ring member 10 Wall plate Member 10a Wall 11 Supply port (for O source gas)
12 Supply port (for Zn source gas)
13 annular box 13a upper annular plate 13b cylindrical plate 13c lower annular plate 14 substrate 15 gas diffusion chamber 15a annular tube 16 gas diffusion chamber 16a annular tube 17 supply tube 18 supply tube 19 supply pipe 19a bifurcated conduit 20 supply pipe 20a bifurcated Pipe 21 Partition plate 22 Cooling jacket 23 Conduit 24 Cooling jacket 25 Inflow pipe 26 Connection pipe 27 Outflow pipe 28 Gear 29 Sun gear 30 Planetary gear D1 Diameter of exposed portion of sapphire substrate D2 Inner diameter OO of exhaust pipe Center line

Claims (9)

A film forming apparatus for forming a film by reacting a plurality of source gases composed of at least a first source gas and a second source gas on the surface of a heated processing substrate disposed in a processing chamber,
The processing chamber is divided into a heating chamber and a reaction chamber by at least a processing substrate,
A source gas exhaust pipe is provided in a continuous state in the reaction chamber at a position facing the processing substrate exposed in the reaction chamber,
Each supply port of the first source gas and the second source gas for supplying the first source gas and the second source gas in an independent state to the surface of the processing substrate is located outside the exhaust pipe. is arranged to,
A film forming apparatus, wherein a wall for reducing the space on the outer peripheral side of the reaction chamber is provided on the outer peripheral side of each of the supply ports . A film forming apparatus for forming a film by reacting a plurality of source gases composed of at least a first source gas and a second source gas on the surface of a heated processing substrate disposed in a processing chamber,
The processing chamber is divided into a heating chamber and a reaction chamber by at least a processing substrate,
A source gas exhaust pipe is provided in a continuous state in the reaction chamber at a position facing the processing substrate exposed in the reaction chamber,
Each supply port of the first source gas and the second source gas for supplying the first source gas and the second source gas in an independent state to the surface of the processing substrate is located outside the exhaust pipe. is arranged to,
Each of the supply ports is formed in an annular member that constitutes a part of the reaction chamber, expands toward the processing substrate, and is continuous with the exhaust pipe. . A film forming apparatus for forming a film by reacting a plurality of source gases composed of at least a first source gas and a second source gas on the surface of a heated processing substrate disposed in a processing chamber,
The processing chamber is divided into a heating chamber and a reaction chamber by at least a processing substrate,
A source gas exhaust pipe is provided in a continuous state in the reaction chamber at a position facing the processing substrate exposed in the reaction chamber,
Each supply port of the first source gas and the second source gas for supplying the first source gas and the second source gas in an independent state to the surface of the processing substrate is located outside the exhaust pipe. is arranged to,
A film forming apparatus characterized in that a gas diffusion chamber for distributing the source gas to each supply port is provided in an annular shape . A film forming apparatus for forming a film by reacting a plurality of source gases composed of at least a first source gas and a second source gas on the surface of a heated processing substrate disposed in a processing chamber,
The processing chamber is divided into a heating chamber and a reaction chamber by at least a processing substrate,
A source gas exhaust pipe is provided in a continuous state in the reaction chamber at a position facing the processing substrate exposed in the reaction chamber,
Each supply port of the first source gas and the second source gas for supplying the first source gas and the second source gas in an independent state to the surface of the processing substrate is located outside the exhaust pipe. is arranged to,
A film forming apparatus , wherein the processing substrate is arranged so that a surface of the processing substrate is substantially perpendicular to a flow direction of the source gas from each of the supply ports . Each shape of the substrate arrangement area where the processing substrate is arranged and the cross section of the exhaust pipe continuing to the reaction chamber is substantially circular, and the center of the substrate arrangement area is arranged on the center line of the exhaust pipe. The film-forming apparatus as described in any one of Claims 1-4 . Each supply ports, film forming apparatus according to any one of claim 1 to 5 are arranged alternately on the circumference. The film forming apparatus according to claim 6 , wherein the supply ports are arranged at equal intervals. The cross-sectional size of the exhaust pipe, film forming apparatus according to any one of claims 1 to 7 greater than the width of the board placement region where the substrate exposed in the reaction chamber is disposed. The film forming apparatus according to claim 3, wherein the exhaust pipe is disposed inside the gas diffusion chamber.

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