CN101008080B - Film-forming device - Google Patents
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- CN101008080B CN101008080B CN2006100047592A CN200610004759A CN101008080B CN 101008080 B CN101008080 B CN 101008080B CN 2006100047592 A CN2006100047592 A CN 2006100047592A CN 200610004759 A CN200610004759 A CN 200610004759A CN 101008080 B CN101008080 B CN 101008080B
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Abstract
The invention provides a film forming device. The multiple raw material gas react on the surface of heated treating base plate (5) and form film. Said treating room (1) comprises heating room (1a) and reacting room (1b), located at position relative to treating base plate (5), a raw material gas discharge pipe (7) is equipped under condition of being connected to reacting room (1b), the surface of said treating base plate (5) is provided with supply port (11, 12) for raw material gas separately, and located outside of discharge pipe (7). The film forming device can prevent raw material gas from reacting before reaching treating plate, and makes influence from radiant heat transfer be minimized and the gas action in reacting room will be more favourable for crystallization and film forming.
Description
Technical field
The present invention relates to a kind of film deposition system,, carry out film forming on the surface of treatment substrate by the unstripped gas that constitutes by first unstripped gas and second unstripped gas at least.
Background technology
For example, the ZnO place that uses in the luminescence unit that the photodiode (LED) that forms white waits prolongs in the film deposition system of film, and making multiple unstripped gas is that O unstripped gas and Zn unstripped gas are reacted, and forms ZnO film on treatment substrate.
In above-mentioned film deposition system, to being installed in the treatment substrate in this device, be blown into unstripped gas from the supplying opening of gas.In this case, do not react before arriving above-mentioned supplying opening in order to make multiple unstripped gas (O unstripped gas and Zn unstripped gas etc.), through making the isolating stream of each unstripped gas and the supplying opening that leads.But, if the sealed state of above-mentioned stream is insufficient, just unstripped gas reacts before then arriving supplying opening, at the formation crystalline films (crystalline film of ZnO) such as internal surface of above-mentioned stream, worsened crystallinity, caused the decline of growth rate of film and the accumulation of particle treatment substrate.
In addition, even from supplying opening multiple unstripped gas is flowed out towards treatment substrate, arriving till the treatment substrate from supplying opening that unstripped gas takes place to send out should, so it is few to be used in the amount of the unstripped gas on the treatment substrate film forming, the use quantitative change of unstripped gas is big, and in addition, film formation time is also elongated.
Especially, utilizing O unstripped gas (O
2, H
2O, N
2O etc.) form under the situation of ZnO film, because easy and other gas reactions of O unstripped gas under the state of gas phase, so on treatment substrate, can not get the good crystalline film of quality.And, high even reaction chamber is in high vacuum state because of reactivity, so also be difficult to address the above problem.If moreover reaction chamber be in low vacuum state, then higher reactivity will occur and become more being difficult to address the above problem.
In addition, because above-mentioned supplying opening is configured in the photothermal place that is subjected to easily from treatment substrate,, become the reason that the crystallinity on the treatment substrate worsens so just the unstripped gas of coming out from supplying opening begins reaction immediately.
On the other hand, mixing multiple unstripped gas in reaction chamber flows and induce the phenomenon of the unstripped gas in above-mentioned the flowing in the exhaust action to treatment substrate.Therefore, because when not finishing into film formed effect, unstripped gas has generated resultant of reaction near treatment substrate, thus identical with above-mentioned situation, produced the crystallinity deterioration of treatment substrate, the reduction of film growth rate, the problems such as accumulation of particle.
Patent documentation 1: specially permit communique No. 3198956
Patent documentation 2: the spy opens flat 1-101623 communique
In order on treatment substrate, to form the good crystalline film of quality, make the sealed state of stream of the unstripped gas in film deposition system intact, multiple unstripped gas is not reacted in above-mentioned stream process.Before handling substrate, be necessary to make it that early response does not take place at supplying opening in addition from unstripped gas.And importantly, at the supplying opening that can make from the minimized local configuration unstripped gas of the photothermal influence of treatment substrate.And exhaust attracts not hinder the action of the unstripped gas of reaction chamber.
Summary of the invention
The invention that the present invention is In view of the foregoing to be made, purpose is to provide a kind of film deposition system, it can prevent that before finishing film forming formation effect on the treatment substrate multiple unstripped gas from reacting, photothermal influence from treatment substrate is minimized, and make the action of gas of reaction chamber more useful for crystalline film.
In order to reach above-mentioned purpose, the purport of film deposition system of the present invention is: a kind of film deposition system, on the surface of the treatment substrate that is in heated condition in being disposed at treatment chamber, at least the multiple unstripped gas that is made of first unstripped gas and second unstripped gas is reacted carry out film forming, wherein
Described treatment chamber is divided into heating chamber and reaction chamber by treatment substrate at least,
In the place relative with the treatment substrate that is exposed to described reaction chamber, with state that reaction chamber links to each other under the vapor pipe of unstripped gas is set,
Dispose each supplying opening of first unstripped gas and second unstripped gas, make it be positioned at the outside of described vapor pipe, described each supplying opening is to the surface of described treatment substrate, independently providing first unstripped gas and second unstripped gas under the state respectively, the spatial wall of the outer circumferential side that reduces reaction chamber is being set at the outer circumferential side of described each supplying opening.
Promptly, film deposition system of the present invention is configured to: described treatment chamber is divided into heating chamber and reaction chamber by treatment substrate at least, in the place relative with the treatment substrate that is exposed to described reaction chamber, with state that reaction chamber links to each other under the vapor pipe of unstripped gas is set, each supplying opening that disposes first unstripped gas and second unstripped gas makes it be positioned at the outside of described vapor pipe, described each supplying opening is independently providing first unstripped gas and second unstripped gas under the state respectively to the surface of described treatment substrate.
Therefore, at least distinguish described heating chamber and reaction chamber by treatment substrate, after the formation of first unstripped gas that arrives treatment substrate and the second unstripped gas crystalline film, do not flow into heating chamber or other place, so the unwanted place beyond treatment substrate can the attachment reaction resultant.In addition, after crystalline film forms because attract with evacuation circuit immediately from the vapor pipe relative with treatment substrate, thus unstripped gas flow without any confusion and cyclicity good.
And, because each supplying opening of first unstripped gas and second unstripped gas is positioned at the outside of described vapor pipe, so become the state that is difficult to involve each supplying opening from the radiant heat of treatment substrate.Thus, near the temperature step-down each supplying opening even the part of each unstripped gas becomes admixture, arrives before the treatment substrate, also can form the temperature condition that is difficult to react, and can increase the amount of the required unstripped gas of the formation that offers crystalline film.In other words configuration place of described each supplying opening, makes the stream space of vapor pipe towards the reaction chamber opening in the imaginary spatial outside that extends to the reaction chamber side.
Because described first unstripped gas and second unstripped gas flow out from described each supplying opening respectively, so even the blended amount also seldom arrives before the treatment substrate in the way of flowing, the amount that begins to react is few.And two unstripped gases that are blown to treatment substrate cause sinuous flow, begin reaction in the place near treatment substrate.The resultant of reaction of this reaction enlarges to the circumferential direction and the center position of treatment substrate, at the crystalline film of generation on the whole of treatment substrate.Thus, all be provided in the formation of crystalline film, afterwards, flow out near the direction to the vapor pipe central part of treatment substrate from the almost major part of the effusive unstripped gas of each supplying opening.
In film deposition system of the present invention, the substrate configuring area that disposes described treatment substrate is roughly circle with each shape in the cross section of the vapor pipe that is connected described reaction chamber, be configured at the center of described substrate configuring area under the situation on the medullary ray of vapor pipe, after film forming on the treatment substrate, can attract exhaust to the direction of vapor pipe from effusive first unstripped gas of described each supplying opening and second unstripped gas from the substantial middle portion of described substrate configuring area.
In film deposition system of the present invention, outer circumferential side at described each supplying opening is provided with minimizing reaction chamber outer circumferential side spatial wall, and can make the amount of two unstripped gases that do not work reduce effectively this moment in reaction chamber, improve the crystallinity of treatment substrate, accelerate the growth rate of film.In addition,, can play effect, obtain good air-flow for treatment substrate as the cowling panel of two unstripped gases by changing the direction of described wall.
In film deposition system of the present invention, dispose under the situation of described each supplying opening in a circumferential direction mutually, first unstripped gas and second unstripped gas arrive the book office of treatment substrate mutually, near each reaction place that is reflected at treatment substrate of two unstripped gases of generation treatment substrate is become evenly, effective to the homogenizing that becomes film quality.
In film deposition system of the present invention, under the situation that equally spaced disposes described each supplying opening, first unstripped gas and second unstripped gas are uniformly-spaced to arrive the book office of treatment substrate regularly, and is more effective to the homogenizing that becomes film quality.
In film deposition system of the present invention, described each supplying opening is set on the endless member, described endless member has constituted the part of reaction chamber, direction expansion towards treatment substrate is opened, and be connected with described vapor pipe, at this moment, each supplying opening can be configured in the photothermal place that is difficult to be subjected to from treatment substrate, reduced near the temperature of each supplying opening, even the part of each unstripped gas becomes admixture, arrive before the treatment substrate, also can form the temperature condition that is difficult to react, can increase the amount of the unstripped gas of the formation that offers crystalline film.
In film deposition system of the present invention, distribute described unstripped gas to be configured to the cyclic shape to the gas diffusion chamber of each supplying opening, at this moment, first unstripped gas and second unstripped gas can be delivered to each supplying opening through stream independently with unstripped gas from each gas diffusion chamber.Therefore, from each gas diffusion chamber up to each supplying opening, because the stream of two unstripped gases separates fully, so on the way can not react.And, because gas diffusion chamber forms the cyclic shape, so become good with the position correspondence of the described endless member that is provided with each supplying opening, make the simplification that becomes of pipe arrangement from gas diffusion chamber to each supplying opening, in addition, can make the length homogenizing of described each pipe arrangement, make easily from the gas stream output of each supplying opening also homogenizing.
In film deposition system of the present invention, be configured at described vapor pipe under the situation of inboard of described gas diffusion chamber, because,, can make the film deposition system compactness so the continuity of the structure of gas diffusion chamber and vapor pipe improves at the inboard of cyclic gas diffusion chamber configuration vapor pipe.
In film deposition system of the present invention, compare with the area of the substrate configuring area that has disposed the treatment substrate that exposes in reaction chamber, the section area of described vapor pipe is bigger, at this moment, after film forming on the treatment substrate, can attract exhaust to the direction of vapor pipe from effusive first unstripped gas of described each supplying opening and second unstripped gas from the substantial middle portion of described substrate configuring area.Especially, dispose a plurality of treatment substrates, manage throughout when carrying out film forming simultaneously on the substrate, after finishing film forming, can attract exhaust from the central part of substrate configuring area by unstripped gas at the substrate configuring area, effective for the raising of crystallinity or film growth rate etc.
In film deposition system of the present invention, the configuration process substrate makes the surface of treatment substrate become approximate vertical with respect to the outflow direction from the unstripped gas of described each supplying opening, at this moment, because each unstripped gas is from arriving treatment substrate for the most resultful direction of the formation of resultant of reaction, so that crystallinity significantly becomes is good.
Description of drawings
Fig. 1 is the sectional view of the film deposition system of expression one embodiment of the present of invention.
Fig. 2 is Fig. 1 [2]-[2] sectional view.
Fig. 3 is the sectional view of the part of expression cooling jacket.
Fig. 4 is stereographic map and a sectional view of representing gas diffusion chamber separately.
Fig. 5 is the sectional view of the film deposition system of expression second embodiment.
Fig. 6 is the sectional view of the film deposition system of expression the 3rd embodiment.
Fig. 7 is Fig. 6 [7]-[7] sectional view.
Fig. 8 is the sectional view that is provided with the spacer plate of a plurality of sapphire (sapphire) substrate.
Fig. 9 is a sectional view of representing the driving mechanism of the revolution of sapphire substrate and rotation briefly.
Figure 10 is the cross-sectional of the film deposition system of expression the 4th embodiment.
Among the figure:
The 1-treatment chamber, 1a-heating chamber, 1b-reaction chamber, 2-processing vessel, the 3-spacer plate, the conical spacer plate of 3a-, 4-opening, 5-treatment substrate, sapphire substrate, the 6-venting port, 7-vapor pipe, 7a-internal surface, 7b-support component, the H-well heater, 8-reverberator, 9-endless member, 10-wall member, the 10a-wall, 11-supplying opening (O unstripped gas is used), 12-supplying opening (Zn unstripped gas is used), 13-ring-type box, 13a-top annular plate, 13b-cylinder plate, 13c-bottom annular plate, the 14-substrate, 15-gas diffusion chamber, 15a-loop pipe, 16-gas diffusion chamber, 16a-loop pipe, 17-supply-pipe, the 18-supply-pipe, 19-supplying duct, 19a-two branch conduits, the 20-supplying duct, 20a-two branch conduits, 21-dividing plate, the 22-cooling jacket, 23-conduit, 24-cooling jacket, the 25-inflow pipe, 26-pipe connecting, 27-outlet pipe, the 28-gear, 29-sun-wheel, 30-sun and planet gear, the diameter of the exposed portions serve of D1-sapphire substrate, the internal diameter of D2-vapor pipe, O-O-medullary ray.
Embodiment
The following describes in order to implement optimal way of the present invention.
Embodiment one
Fig. 1～Fig. 4 represents an embodiment of film deposition system of the present invention.
Fig. 1 is the integrally-built sectional view that is expressed as film device.In addition, Fig. 2 is Fig. 1 [2]-[2] sectional view.This device is inner to be provided with spacer plate 3 in the processing vessel 2 as treatment chamber 1, with the tabular sapphire substrate 5 that assembles under the opening 4 corresponding to states of the circle of opening on the spacer plate 3 as treatment substrate.Above the back side of sapphire substrate 5, dispose heater H, under the state that is surrounded by the reverberator 8 of above-mentioned heater H, form heating chamber 1a.In addition, the treatment chamber 1 of the downside of spacer plate 3 or sapphire substrate 5 is used as provides the reaction chamber of various processing gases 1b.And, disposed treatment chamber 1 evacuated vacuum pump (not shown), make to become vacuum from the 1 interior exhaust of 6 pairs of treatment chambers of venting port.And, have at sapphire substrate 5 under the situation of big area, can only distinguish heating chamber 1a and reaction chamber 1b with this sapphire substrate 5.
For the connection that forms above-mentioned reaction chamber 1b or endless member described later, vapor pipe and cooling room etc., approaching the place configuration ring-type box 13 of spacer plate 3.Inboard at ring-type box 13 forms reaction chamber 1b.As shown in Figure 1, above-mentioned reaction chamber 1b is the space that is configured under the sapphire substrate 5, is connecting the vapor pipe 7 that is connected with venting port 6.That is, above-mentioned vapor pipe 7 extends downwards from the inboard peristome of ring-type box 13.As shown in Figure 2, the flowing path section of above-mentioned vapor pipe 7 forms circle, and symbol 7a represents the inner surface configuration of the circle of vapor pipe 7.The center of the sapphire substrate 5 of the circle of exposing at reaction chamber 1b through above-mentioned opening 4 is roughly consistent with the medullary ray O-O of vapor pipe 7.In addition, above-mentioned medullary ray O-O and flat sapphire substrate 5 are vertical position relation.
This embodiment is the example of the Center-to-Center line O-O unanimity of a slice sapphire substrate 5, and the place that has disposed sapphire substrate 5 is the substrate configuring area.In this example, because a slice sapphire substrate 5 is arranged, so the aforesaid substrate configuring area is single circle, the center of this circular portion is configured on the medullary ray O-O of vapor pipe 7.
As shown in Figures 1 and 2, represent to expose diameter with symbol D1 at the sapphire substrate 5 of the circle of reaction chamber 1b.In addition, the internal diameter of representing vapor pipe 7 with symbol D2.And the pass of setting the size of above-mentioned diameter and internal diameter is: D2＞D1.
The parts that form reaction chamber 1b mainly are endless member 9 and wall member 10.Above-mentioned endless member 9 is that an end links to each other with vapor pipe 7, tapered parts are opened to the direction expansion of sapphire substrate 5 in the other end.In addition, above-mentioned wall member 10 has reduced the space of the outer circumferential side of reaction chamber 1b, promptly is used to reduce the partition parts in the dead zone (dead space) of reaction chamber 1b, and its inboard wall 10a plays and reduces above-mentioned spatial effect.As shown in Figure 2, above-mentioned wall member 10 is parts of the short cylinder shape of formation and above-mentioned medullary ray O-O concentric shape, and in addition, above-mentioned endless member 9 also forms and the concentric shape of above-mentioned medullary ray O-O.Therefore, in reaction chamber 1b, the cross section of Fig. 1 is circular space, and medullary ray O-O runs through its central part.
The unstripped gas of present embodiment is O unstripped gas and Zn unstripped gas, uses O
2, H
2O, N
2O etc. are as O unstripped gas.In addition, use DEZn (zinc ethyl) as Zn unstripped gas.
Making O unstripped gas is that first unstripped gas is that second unstripped gas is towards sapphire substrate 5 effusive supplying openings 12, towards above-mentioned endless member 9 openings towards sapphire substrate 5 effusive supplying openings 11 with making Zn unstripped gas.Each supplying opening 11,12 is configured to be positioned at the foreign side of vapor pipe 7.That is, will prolong to reaction chamber 1b side, supplying opening 11,12 is arranged on the endless member 9 in this outside, imagination space with the imaginary space of the inside diameter D same diameter of vapor pipe 7.
As shown in Figure 2, on the diametric(al) of endless member 9, at gas supply place each and two supplying openings of row arrangement 11,12.And, on the circumference of endless member 9, dispose supplying opening 11 and supplying opening 12 mutually and equally spaced.Fig. 2 is for the ease of identification supplying opening 11 and 12, and is only that supplying opening 12 usefulness decorative pattern figure are full.And, the also supplying opening that can each supplying opening 11,12 be set to more than or three gas supply place.
Above-mentioned ring-type box 13 is by constituting with lower member: endless member 9, coupled flat top annular plate 13a, be connected cylinder plate 13b on the peripheral part of this above-mentioned annular plate 13a, be connected the flat bottom annular plate 13c on the peripheral part of this cylinder plate 13b and the part of vapor pipe 7.In addition, combine cyclic support component 7b in the bottom of vapor pipe 7, its underpart is fixed on the high cyclic substrate 14 of rigidity that wall thickness is set very greatly.Therefore, by vapor pipe 7 and support component 7b, the ring-type box 13 of being furnished with reaction chamber 1b, supplying opening 11,12 etc. has formed the structure of combining closely with substrate 14, so can obtain the high film deposition system of rigidity.And, because treatment substrate 2 also combines with aforesaid substrate 14, so can correctly set the spacer plate 3 of a part that forms processing vessel 2 or the relative position of opening 4 and reaction chamber 1b, the reactant gases for sapphire substrate 5 is correctly arrived, well film forming.
As Fig. 4 (A) and shown in Figure 1, loop pipe 15a, 16a with cyclic gas diffusion chamber 15,16 combine with bottom annular plate 13c.At inside and outside configuration two loop pipe 15a, 16a is big footpath and path, but also can up and down it be configured to same diameter.And vapor pipe 17 has run through the inboard of above-mentioned loop pipe 15a, 16a.The supply-pipe 17 that inserts inner first unstripped gas (O unstripped gas) outside installing is connected to gas diffusion chamber 15, and in addition, the supply-pipe 18 that similarly inserts inner second unstripped gas (Zn unstripped gas) outside installing is connected to gas diffusion chamber 16.Be divided into two from the inside of extended many supplying ducts 19 of loop pipe 15a by ring-type box 13, arrive above-mentioned supplying opening 11.Represent above-mentioned two branch conduits with symbol 19a.Similarly, be divided into two, arrive above-mentioned supplying opening 12 from the inside of extended many supplying ducts 20 of loop pipe 16a by ring-type box 13.Represent above-mentioned two branch conduits with symbol 20a.And gas diffusion chamber 15,16 shown in Fig. 4 (B), can constitute loop pipe 15a and 16a by cyclic cast component one, with inside and outside groove as gas diffusion chamber 15,16.
As Fig. 1 and shown in Figure 3, combine the dividing plate 21 roughly the same in the back of endless member 9 with the shape of endless member 9, between endless member 9 and dividing plate 21, formed the cooling jacket 22 that imports cooling fluid.Above-mentioned two branch conduit 19a, 20a and under sealed state the straight conduit 23 of cross-section cooling jacket 22 link together, the peristome by this conduit 23 has constituted above-mentioned supplying opening 11,12.By flowing out unstripped gas, form the directive property of the air-flow of reaction chamber 1b from this conduit 23.
Peripheral part at vapor pipe 7 has constituted cooling jacket 24.Inflow pipe 25 is connected on the cooling jacket 24 from the outside of device, connects above-mentioned cooling jacket 24 and cooling jacket 22 with pipe connecting 26, and the outlet pipe 27 that is connected on the cooling jacket 22 is outstanding outside device.Flow into cooling fluid by the gas in cooling jacket 24 cooled exhaust pipes 7 from inflow pipe 25, and flow into cooling jacket 22, cool off two branch conduit 19a, 20a or reaction chamber 1b.Afterwards, flow out to the outside from outlet pipe 27.
The foregoing description action effect is as described below.
From respectively independently supply- pipe 17,18 provide first unstripped gas and second unstripped gas separately to gas diffusion chamber 15,16, deliver to supplying opening 11,12 from each gas diffusion chamber 15,16 through discrete supplying ducts 19,20.Therefore, from supply- pipe 17,18 up to supplying opening 11,12, because the stream of two unstripped gases separates fully, so on the way can not react.
By above-mentioned conduit 23 on flow direction to paying directive property from above-mentioned supplying opening 11,12 effusive separately first unstripped gases and second unstripped gas.Therefore, up to arriving sapphire substrate 5, the amount that begins to react is few from supplying opening 11,12 effusive first unstripped gases and second unstripped gas.And preferably the outflow direction of two unstripped gases is at the outer circumferential side of sapphire substrate 5, and near two unstripped gases that are blown to the peripheral part of sapphire substrate 5 cause sinuous flow, begins reaction in the place near sapphire substrate 5.The resultant of reaction of this reaction enlarges to the circumferential direction and the center position of sapphire substrate 5, and the while is at the crystalline film of generation on the whole of sapphire substrate 5.Thus, all be provided in the formation of crystalline film, afterwards, flow out near the direction to vapor pipe 7 central part of sapphire substrate 5 from the almost major part of supplying opening 11,12 effusive unstripped gases.
And in the imaginary spatial outside of the reaction chamber 1b side that extends to vapor pipe 7, the supplying opening 11,12 of first unstripped gas and second unstripped gas is to reaction chamber 1b opening.Therefore, radiant heat from sapphire substrate 5 becomes the state that is difficult to involve supplying opening 11,12, near so temperature step-down the supplying opening 11,12, even the part of each unstripped gas becomes admixture, before arriving sapphire substrate 5, also the temperature condition that is difficult to react can be formed, the amount of the unstripped gas of the formation that offers crystalline film can be increased.
Because distinguish heating chamber 1a and reaction chamber 1b by spacer plate 3 and sapphire substrate 5, so after two unstripped gases that arrived sapphire substrate 5 form crystalline film, because do not flow into heating chamber 1a or other place, so the unwanted place beyond sapphire substrate 5 can the attachment reaction resultant.In addition, after crystalline film forms, because directly attract, so the cyclicity of unstripped gas is good with evacuation circuit.
Because by the space that wall 10a has reduced the outer circumferential side of reaction chamber 1b,, improve the crystallinity of sapphire substrate 5, accelerate the growth rate of film so in reaction chamber 1b, the amount of two unstripped gases that do not work is reduced.
In addition, because dispose each supplying opening 11,12 in a circumferential direction mutually and equally spaced, so first unstripped gas and second unstripped gas are regular and reciprocally arrive the book office of sapphire substrate 5, each reaction place that is reflected at sapphire substrate 5 of two unstripped gases of generation becomes evenly near sapphire substrate 5, and is effective to the homogenizing that becomes film quality.
Because being set at towards the direction of sapphire substrate 5, expands on the endless member 9 of the taper of opening supplying opening 11,12, so supplying opening 11,12 can be configured in the photothermal place that is difficult to be subjected to from sapphire substrate 5, reduced near the temperature the supplying opening 11,12, even the part of each unstripped gas becomes admixture, arrive before the sapphire substrate 5, also the temperature condition that is difficult to react can be formed, the amount of the unstripped gas of the formation that offers crystalline film can be increased.
First unstripped gas and second unstripped gas are delivered to each supplying opening 11,12 through supplying duct 19,20 independently with unstripped gas from each gas diffusion chamber 15,16.Therefore, from each gas diffusion chamber 15,16 up to each supplying opening 11,12 because the stream of two unstripped gases separates fully, thus its way in can not react.And, because what form gas diffusion chamber's 15,16 parts is shaped as loop pipe 15a, 16a, so become good with the position correspondence of the above-mentioned endless member 9 that is provided with each supplying opening 11,12, make the simplification that becomes of pipe arrangement from gas diffusion chamber 15,16 to each supplying opening 11,12, in addition, make the length homogenizing of above-mentioned each pipe arrangement, make easily from the gas stream output of each supplying opening 11,12 also homogenizing.
And, for example 10
-3～1Pa (10
-5～10
-2The mean free path of the Zn unstripped gas in the high vacuum Torr) (DEZn gas) molecule is about 50～100mm, so increase this mean free path, arrives sapphire substrate 5 from supplying opening 11,12, can suppress and O unstripped gas (O as far as possible
2, H
2O, N
2O etc.) reaction.Therefore, in the scope of above-mentioned vacuum pressure, preferably in not hindering reactive scope, as far as possible the mean free path of above-mentioned Zn unstripped gas is set in the big zone.Particularly, above-mentioned mean free path is preferably more than the 50mm, more preferably more than the 70mm, further preferably more than the 100mm.
On the other hand, because Zn unstripped gas decomposes in 200～300 ℃,, make the temperature of Zn unstripped gas 100 ℃ of front and back so carry out the cooling control of cooling jacket 22 grades if then can be condensing to its cooling.
In addition, because on ring-type box 13, the configuration of the configuration of endless member 9, supplying opening 11,12, the formation of cooling jacket 22, installation loop pipe 15a, 16a etc., structurally be with the structure of this ring-type box 13, so can be in the structure of concentrating the most important functions part that is formed into film device under the compact state as the core texture thing.
Embodiment two
Fig. 5 represents second embodiment of film deposition system of the present invention.
This embodiment is: the shape of the above-mentioned wall member 10 of cyclic forms the taper that sapphire substrate 5 sides become path.In addition, same as the previously described embodiments, same part is paid identical symbol.
By said structure, further reduced the space of the outer circumferential side of reaction chamber 1b, and come the air-flow of rectification from supplying opening 11,12 by the wall 10a of wall member 10, good air-flow is interfered the surface of sapphire substrate 5, can carry out high-quality film forming.In addition, produce action effect same as the previously described embodiments.
Embodiment three
Fig. 6 to Fig. 9 represents the 3rd embodiment of film deposition system of the present invention.
This embodiment is at eight sapphire substrates 5 of substrate configuring area configuration.Therefore, on spacer plate 3, eight openings 4 are set on circumference.The zone of configuration sapphire substrate 5 is a border circular areas, wherein feels being on the medullary ray O-O.And as shown in Figure 7, spacer plate 3 is circular, can be the center rotation with medullary ray O-O.These spacer plate 3 whole rotations, so-called revolution can be carried out with various driving mechanisms.For example, though do not express among the figure, in conjunction with axle, rotation drives this axle at the central part of spacer plate 3.And, compare with the substrate configuring area that has disposed the sapphire substrate 5 that exposes in reaction chamber 1b, set the section area of vapor pipe 7 bigger.
In addition, as Fig. 8, shown in Figure 9, also can be that sapphire substrate 5 oneself rotates, in above-mentioned revolution, append so-called rotation.Can adopt the driving mechanism of various mechanisms' conducts rotation at this moment, for example, as shown in Figure 9, gear 28 with revolution usefulness makes spacer plate 3 rotations, on the other hand, meshing planetary gear 30 on the sun-wheel 29 of central part configuration is provided with above-mentioned opening 4 on each sun and planet gear 30, dispose sapphire substrate 5 herein.If make gear 28 rotations, then make spacer plate 3 whole revolution, meanwhile, each sun and planet gear 30 rotation and sapphire substrate 5 rotation.In addition, identical with the various embodiments described above, same part is paid identical symbol.
By said structure, a plurality of sapphire substrate 5 revolution or revolution and rotation, unstripped gas is interfered equably to each sapphire substrate 5, does not have the good film forming of quality of deviation on each sapphire substrate 5.And, from above-mentioned each supplying opening 11,12 effusive first unstripped gas and second unstripped gas after film forming on the sapphire substrate 5, can attract exhaust to the direction of vapor pipe 7 from the substantial middle portion of aforesaid substrate configuring area, especially, dispose a plurality of sapphire substrates 5 at the substrate configuring area, when on each sapphire substrate 5, carrying out film forming simultaneously, after finishing film forming by unstripped gas, attract exhaust from the central part of substrate configuring area, effective for the raising of crystallinity or film growth rate etc.In addition, produce action effect same as the previously described embodiments.
Embodiment four
Figure 10 represents the 4th embodiment of film deposition system of the present invention.
This embodiment is: configuration sapphire substrate 5 makes the surface of sapphire substrate 5 relatively become approximate vertical from the outflow direction of the unstripped gas of above-mentioned each supplying opening 11,12.Therefore, the conical spacer plate 3a relative with the endless member 9 of taper is set, sapphire substrate 5 is installed on this taper shape spacer plate 3a, set the angle of inclination of above-mentioned spacer plate 3a, make the surface of this substrate 5 become approximate vertical from the raw material gas flow outgoing direction of each supplying opening 11,12 relatively.In addition, because the configuration posture of such sapphire substrate 5, so reaction chamber 1b also becomes the spatial form of taper.In addition, identical with the various embodiments described above, same part is paid identical symbol.
By said structure, each unstripped gas is from arriving sapphire substrate 5 for the most resultful direction of the formation of resultant of reaction, so that crystallinity significantly becomes is good.In addition, because sapphire substrate 5 is configured on the conical spacer plate 3a, and the direction of vapor pipe 7 tilts relatively, so the gas exhaust after the film forming successfully flows out to the direction of vapor pipe 7.
Industrial utilizability
Because at the supply port that is difficult to be subjected to arranging from the photothermal place for the treatment of substrate a plurality of unstrpped gases, the direction to blast pipe after crystalline film forms attracts exhaust, so significantly increased the amount of the unstrpped gas that is become membranization. Because crystallinity is good and to have shortened the one-tenth of film long-time, so can expect the high possibility of utilizing in this industrial circle.
Claims (9)
1. a film deposition system on the surface of the treatment substrate that is in heated condition in being disposed at treatment chamber, reacts the multiple unstripped gas that is made of first unstripped gas and second unstripped gas at least and carries out film forming, it is characterized in that,
Described treatment chamber is divided into heating chamber and reaction chamber by treatment substrate at least,
In the place relative with the treatment substrate that is exposed to described reaction chamber, with state that reaction chamber links to each other under the vapor pipe of unstripped gas is set,
Dispose each supplying opening of first unstripped gas and second unstripped gas, make it be positioned at the outside of described vapor pipe, described each supplying opening is independently providing first unstripped gas and second unstripped gas under the state respectively to the surface of described treatment substrate,
The spatial wall of the outer circumferential side that reduces reaction chamber is set at the outer circumferential side of described each supplying opening.
2. film deposition system according to claim 1 is characterized in that,
The substrate configuring area that disposes described treatment substrate is roughly circle with each shape in the cross section of the vapor pipe that is connected described reaction chamber, and the center of described substrate configuring area is configured on the medullary ray of vapor pipe.
3. film deposition system according to claim 1 and 2 is characterized in that,
Described each supplying opening of alternately configured in a circumferential direction.
4. film deposition system according to claim 3 is characterized in that,
Equally spaced dispose described each supplying opening.
5. film deposition system according to claim 1 and 2 is characterized in that,
Described each supplying opening is set on the endless member, and described endless member constitutes the part of reaction chamber, opens towards the direction expansion of treatment substrate, and is connected with described vapor pipe.
6. film deposition system according to claim 1 and 2 is characterized in that,
Distribute described unstripped gas to be configured to the cyclic shape to the gas diffusion chamber of each supplying opening.
7. film deposition system according to claim 6 is characterized in that,
Described vapor pipe is configured in the inboard of described gas diffusion chamber.
8. film deposition system according to claim 1 and 2 is characterized in that,
Compare with the area of the substrate configuring area that has disposed the treatment substrate that exposes in reaction chamber, the section area of described vapor pipe is bigger.
9. film deposition system according to claim 1 and 2 is characterized in that,
The configuration process substrate makes the surface of treatment substrate become approximate vertical with respect to the outflow direction from the unstripped gas of described each supplying opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100047592A CN101008080B (en) | 2006-01-27 | 2006-01-27 | Film-forming device |
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| CN2006100047592A CN101008080B (en) | 2006-01-27 | 2006-01-27 | Film-forming device |
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| JP5347294B2 (en) * | 2007-09-12 | 2013-11-20 | 東京エレクトロン株式会社 | Film forming apparatus, film forming method, and storage medium |
| CN103820769B (en) * | 2012-11-16 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of reaction chamber and MOCVD device |
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Non-Patent Citations (2)
| Title |
|---|
| JP平1-101623A 1989.04.19 |
| JP特开平5-275347A 1993.10.22 |
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Effective date of registration: 20170323 Address after: Japan Hokkaido Patentee after: Air Water Inc. Address before: Japan Hokkaido Patentee before: Air Water Inc. Patentee before: Stanley Electric Co., Ltd. |