JP4351954B2 - Method for recovering and recycling resist waste liquid for thin film transistors - Google Patents
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- JP4351954B2 JP4351954B2 JP2004160108A JP2004160108A JP4351954B2 JP 4351954 B2 JP4351954 B2 JP 4351954B2 JP 2004160108 A JP2004160108 A JP 2004160108A JP 2004160108 A JP2004160108 A JP 2004160108A JP 4351954 B2 JP4351954 B2 JP 4351954B2
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- 239000007788 liquid Substances 0.000 title claims description 85
- 239000002699 waste material Substances 0.000 title claims description 76
- 238000000034 method Methods 0.000 title claims description 29
- 239000010409 thin film Substances 0.000 title claims description 15
- 238000004064 recycling Methods 0.000 title claims description 12
- 239000010408 film Substances 0.000 claims description 33
- 238000011084 recovery Methods 0.000 claims description 25
- 239000002904 solvent Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 239000003504 photosensitizing agent Substances 0.000 claims description 10
- 238000011069 regeneration method Methods 0.000 claims description 9
- 230000008929 regeneration Effects 0.000 claims description 8
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 6
- 239000012965 benzophenone Substances 0.000 claims description 6
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 37
- 239000010419 fine particle Substances 0.000 description 13
- 230000035945 sensitivity Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000010812 mixed waste Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000001172 regenerating effect Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
本発明は、レジスト廃液の回収再生方法に関し、さらに詳しくは薄膜トランジスタ用レジスト廃液の再生に適したレジスト廃液の回収再生方法に関する。 The present invention relates to a method for recovering and recycling a resist waste liquid, and more particularly, to a method for recovering and recovering a resist waste liquid suitable for recycling a resist waste liquid for thin film transistors.
薄膜トランジスタ（以下、「ＴＦＴ」という）型液晶素子を製造する際には、基板上にレジスト膜が形成される（レジスト膜形成工程）。かかるレジスト膜形成工程では、一般に、基板に一定量のレジスト液を滴下し、この基板を回転させることにより、ＴＦＴ用レジスト液を基板上にレジスト膜を形成する。このとき、基板に滴下したレジスト液の大半は、回転により基板から振り切られて飛散する。この飛散したレジスト液は、廃液受けに受け止められ、後に大量の溶剤で洗い流されてレジスト廃液として処理されることとなる。このようにして行なわれるレジスト膜形成工程では、レジスト膜の形成に使用されるレジスト液の液量よりも飛散するレジスト液の液量の方が多いため、レジスト液の使用効率が悪く、レジスト膜の生産コストの増加を招いている。さらに、上記レジスト廃液の処理は、焼却等により行なわれており、この廃液処理により二酸化炭素が発生し、環境に悪影響を与えていると考えられる。 When manufacturing a thin film transistor (hereinafter referred to as “TFT”) type liquid crystal element, a resist film is formed on a substrate (resist film forming step). In the resist film forming step, a resist film is generally formed on the substrate by dropping a certain amount of resist solution onto the substrate and rotating the substrate. At this time, most of the resist solution dropped onto the substrate is shaken off from the substrate by the rotation and scattered. The scattered resist liquid is received by a waste liquid receiver, and then washed away with a large amount of solvent and processed as a resist waste liquid. In the resist film forming process performed in this way, the resist solution is used less efficiently because the amount of resist solution that scatters is larger than the amount of resist solution used to form the resist film. Increase in production costs. Further, the resist waste liquid is treated by incineration or the like, and it is considered that carbon dioxide is generated by this waste liquid treatment, which adversely affects the environment.
これらの問題に対して、レジスト廃液を再利用しようとする提案がなされている（例えば、特許文献１および２参照）。これらの公報では、レジスト膜形成工程で生じたレジスト廃液を、回収、ろ過、粘度調整等を行なった後、レジスト組成物として再利用することが提案されている。 In order to solve these problems, proposals have been made to reuse the resist waste liquid (see, for example, Patent Documents 1 and 2). In these publications, it is proposed that the resist waste liquid generated in the resist film forming step is recovered, filtered, viscosity-adjusted, and then reused as a resist composition.
しかしながら、上記公報の方法で再生したレジスト組成物を用いてレジスト膜を形成した場合、レジスト膜の感度低下、レジスト膜の膜べり、および形成されたレジストパターンのがたつきを生じ、良好なレジストパターンが得られないという問題があった。 However, when a resist film is formed by using the resist composition regenerated by the method described in the above publication, the resist film sensitivity decreases, the resist film slips, and the formed resist pattern becomes unstable, resulting in a good resist. There was a problem that a pattern could not be obtained.
本発明者らは、上記課題を解決するために、まず、上記課題が生じる理由について検討を行なった。その結果、再生後のレジスト組成物において経時的に微粒子の発生や感度の低下が認められ、特にかかる微粒子の発生が、レジスト膜の微細な加工を妨げ、レジストパターンのがたつきを生じさせる原因となっているという知見を得た。 In order to solve the above-mentioned problems, the present inventors first examined the reason why the above-mentioned problems occur. As a result, generation of fine particles and a decrease in sensitivity are recognized over time in the regenerated resist composition. Particularly, the generation of such fine particles hinders fine processing of the resist film and causes rattling of the resist pattern. I got the knowledge that.
また、本発明者らは、再生レジスト組成物に微粒子が増加したり、感度が低下したりするという傾向は、特にベンゾフェノン系の感光剤と有機溶剤としてプロピレングリコールモノメチルエーテルアセテート（ＰＧＭＥＡ）を含む再生レジスト組成物において顕著であるという知見も得た。 Further, the present inventors have a tendency that fine particles are increased or sensitivity is lowered in the regenerated resist composition, in particular, a regenerated resist composition containing propylene glycol monomethyl ether acetate (PGMEA) as a benzophenone photosensitizer and an organic solvent. The knowledge that it is remarkable in a resist composition was also obtained.
そこで、本発明者らは、微粒子の発生原因および再生レジスト液の感度低下の原因を解析検討したところ、以下の知見を得るに至った。
（ｉ）一度発生した微粒子は、再溶解しにくい。また、発生した微粒子が核となって経時的な微粒子の増加を招く傾向がある。従って、回収初期での微粒子の発生を抑えることが特に必要である。
（ｉｉ）感光剤（例えば、ベンゾフェノン系）は、レジスト樹脂（例えば、ノボラック樹脂）と混合し加熱溶解することにより、加熱により広がったノボラック樹脂の樹脂骨格に包み込まれることで溶解した状態となっている。しかしながら、レジスト廃液が高温になるとノボラック樹脂の樹脂骨格が広がるため、レジスト樹脂の樹脂骨格に包み込まれていた感光剤が溶剤中に放り出される。その結果、一般にレジスト溶液（例えば、ＰＧＭＥＡ）に対する感光剤（例えば、ベンゾフェノン系感光剤）の溶解性は低いため、レジスト溶液中で感光剤が析出し微粒子となる。
（ｉｉｉ）レジスト廃液が高温になると熱エネルギーにより感光剤化合物の構造中のＮ2が感光時と同様な状態で離脱し、インデンケテン、インデンカルボン酸となる。その結果、アルカリ溶解性が増すこととなり、感度が劣化する。
（ｉｖ）レジスト廃液は、０℃以下となると感度の点では問題ないが、微粒子が発生する傾向がある。感光剤の溶解度が下がり、析出するためである。
Therefore, the present inventors analyzed and examined the cause of the generation of fine particles and the cause of the decrease in sensitivity of the regenerated resist solution, and the following knowledge was obtained.
(I) Fine particles once generated are difficult to be re-dissolved. Further, the generated fine particles tend to become nuclei and cause an increase in fine particles over time. Therefore, it is particularly necessary to suppress the generation of fine particles at the initial stage of recovery.
(Ii) A photosensitive agent (for example, benzophenone series) is mixed with a resist resin (for example, a novolac resin) and dissolved by heating, so that the photosensitive agent is dissolved by being encased in the resin skeleton of the novolac resin that is spread by heating. Yes. However, since the resin skeleton of the novolak resin spreads when the resist waste liquid reaches a high temperature, the photosensitive agent wrapped in the resin skeleton of the resist resin is released into the solvent. As a result, the solubility of the photosensitizer (eg, benzophenone photosensitizer) in the resist solution (eg, PGMEA) is generally low, so the photosensitizer is precipitated in the resist solution to form fine particles.
(Iii) When the resist waste liquid reaches a high temperature, N 2 in the structure of the photosensitizer compound is released in the same state as that at the time of photosensitivity by heat energy, and becomes indenketene and indenecarboxylic acid. As a result, alkali solubility increases and sensitivity deteriorates.
(Iv) When the resist waste liquid is 0 ° C. or lower, there is no problem in terms of sensitivity, but fine particles tend to be generated. This is because the solubility of the photosensitive agent decreases and precipitates.
上記（ｉ）〜（ｉｖ）の知見より、本発明者らは、上記レジスト廃液中の微粒子の発生および感度の低下にはレジスト廃液の温度（特に初期段階の温度）が関与しているとの考察を得た。そこで、本発明者らは、レジスト廃液の回収再生工程、特に初期の工程（廃液回収工程）についてさらなる検討を行なった。 From the findings of (i) to (iv) above, the present inventors indicate that the temperature of the resist waste liquid (particularly the initial stage temperature) is involved in the generation of fine particles in the resist waste liquid and the reduction in sensitivity. Got some thought. Accordingly, the present inventors have further studied the recovery and recovery process of the resist waste liquid, particularly the initial process (waste liquid recovery process).
廃液回収工程では、ＴＦＴ用レジスト膜を形成する際に基板上に保持されず廃液受けの側壁等に付着したレジスト液を、大量の溶剤で洗い流して回収する。このようにして得られるレジスト廃液の大部分は溶剤であるため、この溶剤の温度を制御することにより、上記課題を解決できるのではないかと考えた。ここで、付着したレジスト液を溶剤で洗い流すには溶剤の温度が高い方が溶解度の点から好ましい。しかしながら、上述したようにレジスト廃液を高温にするとレジスト廃液中に微粒子が発生してしまうという問題が生じる。かかる知見から、レジスト廃液の回収再生方法においては、主に溶剤温度を制御すれば上記課題が改善されることが理解された。 In the waste liquid recovery step, the resist liquid that is not held on the substrate and adhered to the sidewall of the waste liquid receiver or the like when forming the TFT resist film is washed away with a large amount of solvent and recovered. Since most of the resist waste liquid obtained in this way is a solvent, it was thought that the above problem could be solved by controlling the temperature of the solvent. Here, in order to wash away the adhering resist solution with a solvent, a higher solvent temperature is preferable from the viewpoint of solubility. However, as described above, when the resist waste liquid is heated to a high temperature, there arises a problem that fine particles are generated in the resist waste liquid. From this knowledge, it was understood that in the method for recovering and recycling the resist waste liquid, the above problem can be improved by mainly controlling the solvent temperature.
すなわち、本発明の薄膜トランジスタ用レジスト廃液の回収再生方法は、基板上に薄膜トランジスタ用レジスト膜を形成するレジスト膜形成工程から上記レジスト膜形成工程において生じたレジスト廃液を回収して貯蔵する廃液回収工程を経由して、上記廃液回収工程で回収したレジスト廃液を再生する再生工程に至る全工程を通して行なわれる薄膜トランジスタ用レジスト廃液回収再生方法であって、上記レジスト膜形成工程および上記廃液回収工程を１〜２６℃に管理することを特徴とする。また、少なくとも上記廃液回収工程において用いられる廃液受けに付着した廃液を洗い流すために用いられる溶剤を所定の温度範囲に維持することが好ましい。 That is, the thin film transistor resist waste liquid recovery and recycling method of the present invention includes a waste liquid recovery step of recovering and storing the resist waste liquid generated in the resist film formation step from the resist film formation step of forming the thin film transistor resist film on the substrate. A method for recovering and regenerating a resist waste liquid for a thin film transistor, which is performed through all steps up to a regeneration process for regenerating the resist waste liquid recovered in the waste liquid recovery process. It is characterized by being controlled at ℃. Moreover, it is preferable to maintain the solvent used for washing away the waste liquid adhering to the waste liquid receiver used in at least the waste liquid recovery step in a predetermined temperature range.
本発明にかかるＴＦＴ用レジスト廃液の回収再生方法は、回収したＴＦＴ用レジスト廃液を劣化させることなく、繰り返し再生可能とすることができる。そのため、レジスト膜形成工程におけるコスト、ひいてはＴＦＴ型液晶素子の製造コストを低減することが可能となる。さらに、廃棄されるＴＦＴ用レジスト液の量を削減することができるため、廃棄の際の焼却に伴う二酸化炭素等の発生を低減することができ、環境への悪影響を低減することが可能となる。 The method for recovering and recycling the TFT resist waste liquid according to the present invention can be repeatedly regenerated without deteriorating the collected TFT resist waste liquid. For this reason, it is possible to reduce the cost in the resist film forming process, and hence the manufacturing cost of the TFT type liquid crystal element. Furthermore, since the amount of TFT resist solution to be discarded can be reduced, generation of carbon dioxide and the like accompanying incineration at the time of disposal can be reduced, and adverse effects on the environment can be reduced. .
以下に、本発明の実施形態について説明する。
本発明の薄膜トランジスタ用レジスト廃液の回収再生方法は、基板上に薄膜トランジスタ用レジスト膜を形成するレジスト膜形成工程から上記レジスト膜形成工程において生じたレジスト廃液を回収して貯蔵する廃液回収工程を経由して、上記廃液回収工程で回収したレジスト廃液を再生する再生工程に至る全工程を通して行なわれる薄膜トランジスタ用レジスト廃液回収再生方法であって、上記レジスト膜形成工程および上記廃液回収工程を１〜２６℃に管理することを特徴とする。また、少なくとも上記廃液回収工程において用いられる廃液受けに付着した廃液を洗い流すために用いられる溶剤を所定の温度範囲に維持することが好ましい。
Hereinafter, embodiments of the present invention will be described.
The method for recovering and recycling the thin film transistor resist waste liquid of the present invention passes through the waste liquid recovery process for recovering and storing the resist waste liquid generated in the resist film forming process from the resist film forming process for forming the thin film transistor resist film on the substrate. A method for recovering and recycling a resist waste liquid for a thin film transistor, which is performed through all steps up to a regeneration process for regenerating the resist waste liquid recovered in the waste liquid recovery process, wherein the resist film forming process and the waste liquid recovery process are performed at 1 to 26 ° C. It is characterized by management. Moreover, it is preferable to maintain the solvent used for washing away the waste liquid adhering to the waste liquid receiver used in at least the waste liquid recovery step in a predetermined temperature range.
上記レジスト膜形成工程とは、基板にＴＦＴ用のレジスト液を塗布してレジスト膜を形成する工程をいう。上記塗布には、例えば回転塗布装置などが用いられる。回転塗布装置を一例に挙げて説明すると、回転塗布装置においては、支持した基板を回転させながら基板上に所定量のＴＦＴ用レジスト液を滴下してレジスト膜を基板上に形成する。上記基板に滴下したＴＦＴ用レジスト液は、基盤の回転の際に、基板上に塗布されるが、過剰量のＴＦＴ用レジスト液は基板から振り切られ、廃液受けに受け止められる（一次廃液）。なお、廃液受けは、レジスト膜の形成に使用されなかったレジスト液を受け止めることができればよく、回転塗布装置に用いられるものに限定されない。 The resist film forming step refers to a step of forming a resist film by applying a TFT resist solution to a substrate. For the application, for example, a spin coater is used. The spin coater will be described as an example. In the spin coater, a predetermined amount of TFT resist solution is dropped on the substrate while rotating the supported substrate to form a resist film on the substrate. The TFT resist solution dropped on the substrate is applied onto the substrate during the rotation of the substrate, but an excessive amount of the TFT resist solution is shaken off from the substrate and received by the waste liquid receiver (primary waste liquid). The waste liquid receiver is not limited to the one used in the spin coater as long as it can receive the resist liquid that has not been used for forming the resist film.
上記レジスト膜形成工程における室内温度範囲を１〜２６℃に制御するのが好ましく、９〜２１℃に制御するのがより好ましい。 The room temperature range in the resist film forming step is preferably controlled to 1 to 26 ° C, more preferably 9 to 21 ° C.
本発明の方法は、特に上記ＴＦＴ用のレジスト液として、ベンゾフェノン系の感光剤およびプロピレングリコールモノメチルエーテルアセテートを含有するレジスト液に対して好ましく用いることができる。上記レジスト液は、再生レジスト組成物に微粒子が増加したり、感度が低下したりするという傾向が高いためである。 The method of the present invention can be preferably used for a resist solution containing a benzophenone photosensitizer and propylene glycol monomethyl ether acetate, particularly as the resist solution for the TFT. This is because the resist solution has a high tendency for fine particles to increase or the sensitivity to decrease in the regenerated resist composition.
上記廃液回収工程とは、廃液受けの側壁等に付着した一次廃液をレジスト液に使用されている溶剤で溶解して回収（二次廃液）し、上記一次廃液と混合して混合廃液を得る工程をいう。ここで用いられる溶剤の温度は、１〜２６℃、好ましくは９〜２１℃である。１℃未満だと回収レジスト液の感度は問題ないが、レジスト液中にパーティクル発生しやすくなる。レジスト液に含まれる感光剤の溶解度が下がり、析出するためと考えられる。一方、２６℃を越えた場合、感光剤の析出が起こり、パーティクルが発生し、また、感度も劣化する。上記溶剤の温度を制御するとともに、上記混合廃液および室温も上記温度範囲に制御するのが好ましい。上記廃液回収工程で得られた混合廃液を貯蔵する場合も、上記温度範囲とするのが好ましい。 The above-mentioned waste liquid recovery process is a process in which the primary waste liquid adhering to the side wall of the waste liquid receiver etc. is dissolved and recovered (secondary waste liquid) with the solvent used in the resist liquid, and mixed with the primary waste liquid to obtain a mixed waste liquid Say. The temperature of the solvent used here is 1 to 26 ° C., preferably 9 to 21 ° C. When the temperature is lower than 1 ° C., the sensitivity of the recovered resist solution is not a problem, but particles are easily generated in the resist solution. This is presumably because the solubility of the photosensitizer contained in the resist solution decreases and precipitates. On the other hand, when the temperature exceeds 26 ° C., the photosensitizer is precipitated, particles are generated, and sensitivity is also deteriorated. While controlling the temperature of the said solvent, it is preferable to also control the said mixed waste liquid and room temperature to the said temperature range. Even when the mixed waste liquid obtained in the waste liquid recovery step is stored, it is preferable to set the temperature range.
上記レジスト液に含まれる溶剤は、例えば、ＰＧＭＥＡなどが挙げられる。 Examples of the solvent contained in the resist solution include PGMEA.
上記再生工程とは、上記混合廃液から、ろ過、加熱蒸留等により、溶剤を分離し、レジスト再生液を得る工程をいう。上記ろ過により、混合廃液中の汚染物質を除去することができる。 The regeneration step refers to a step of obtaining a resist regeneration solution by separating the solvent from the mixed waste solution by filtration, heat distillation or the like. By the above filtration, contaminants in the mixed waste liquid can be removed.
加熱蒸留して分離された溶剤は、上記廃液回収工程においてレジスト廃液受けに付着した一次廃液を溶解するために用いることができる。また、混合廃液の粘度、濃度等の調整に用いることができる。 The solvent separated by heating distillation can be used to dissolve the primary waste liquid adhering to the resist waste liquid receiver in the waste liquid recovery step. It can also be used to adjust the viscosity, concentration, etc. of the mixed waste liquid.
上記レジスト再生液は、溶剤または新品のＴＦＴ用レジスト原液で濃度調整することによりＴＦＴ用レジスト液とし、原液から新しく調製したＴＦＴ用レジスト溶液と同様に、レジスト膜形成工程に用いることができる。 The above-mentioned resist regeneration solution is adjusted to a concentration with a solvent or a new stock solution for TFT, and can be used in the resist film forming step in the same manner as a TFT resist solution newly prepared from the stock solution.
この再生工程においても上述したレジスト膜形成工程および廃液回収工程と同様の室内温度範囲に制御するのが好ましい。 Also in this regeneration step, it is preferable to control the room temperature range similar to the above-described resist film forming step and waste liquid recovery step.
各工程間においてもレジスト膜形成工程および廃液回収工程と同様の温度範囲に制御するのが好ましい。各工程および各工程間の温度を一定範囲に制御することにより、設備の設置地域、場所、また季節を問わず、回収したＴＦＴ用レジスト廃液を劣化しにくいものとし、繰り返し再生可能とすることができる。 It is preferable that the temperature is controlled within the same temperature range as in the resist film forming step and the waste liquid recovery step between the steps. By controlling each process and the temperature between each process within a certain range, the collected TFT resist waste liquid is not easily deteriorated regardless of the installation area, location, and season of the equipment, and can be regenerated repeatedly. it can.
以下、実施例に基づき、本発明についてさらに詳細に説明する。なお、本発明は下記実施例に限定されるものではない。 Hereinafter, the present invention will be described in more detail based on examples. In addition, this invention is not limited to the following Example.
〔実施例１〕
回転塗布装置を用い、ノボラック樹脂、ベンゾフェノン系の感光剤、および溶剤を含むレジスト液を、基板上にレジスト膜を形成した。この回転塗布装置は、２０℃に管理した雰囲気下に設置した。
[Example 1]
Using a spin coater, a resist film containing a novolac resin, a benzophenone photosensitizer, and a solvent containing a solvent was formed on the substrate. This spin coater was installed in an atmosphere controlled at 20 ° C.
この回転塗布の際に基板上から振り切られ、回転塗布装置の廃液受けの側壁等に付着したレジスト液を、大量の回収溶剤（レジスト液の溶剤）で洗い流して回収した。この回収溶剤は、２０℃に管理したものを用いた。そして、回収されたレジスト液は、２０℃に管理して貯蔵した。 The resist solution that was shaken off from the substrate during the spin coating and adhered to the side wall of the waste liquid receiver of the spin coater was washed away with a large amount of the recovery solvent (resist solution solvent) and recovered. The recovered solvent used was controlled at 20 ° C. The recovered resist solution was controlled and stored at 20 ° C.
続いて、回収されたレジスト液を、内温６０℃で６０分蒸留後、直ちに２０℃に冷却することにより再生した。
この再生したレジスト液を用い、レジストパターンを形成してレジスト液の劣化について検討した。
Subsequently, the recovered resist solution was regenerated by distilling at an internal temperature of 60 ° C. for 60 minutes and immediately cooling to 20 ° C.
Using this regenerated resist solution, a resist pattern was formed to examine the deterioration of the resist solution.
その結果、再生したレジスト液は、レジスト液としての劣化は認められず、レジスト液として十分に再利用可能であった。また、同回収再生方法を再度行なった場合にも、再生したレジスト液は、レジスト液としての劣化は認められず、レジスト液として十分に再利用可能であった。 As a result, the regenerated resist solution was not deteriorated as a resist solution and was sufficiently reusable as a resist solution. Further, when the recovery and regeneration method was performed again, the regenerated resist solution was not deteriorated as a resist solution and could be sufficiently reused as a resist solution.
以上のように、本発明の薄膜トランジスタ用レジスト廃液の回収再生方法は、ＴＦＴ用レジスト廃液を繰り返し再利用できるため、ＴＦＴ型液晶素子の製造において有用である。 As described above, the method for recovering and recycling a resist waste liquid for a thin film transistor of the present invention is useful in manufacturing a TFT type liquid crystal element because the resist waste liquid for TFT can be repeatedly reused.
Claims (3)
前記レジスト膜形成工程および／または廃液回収工程において前記レジスト廃液を９〜２１℃の温度範囲で取り扱うことを特徴とする薄膜トランジスタ用レジスト廃液の回収再生方法。 Recover the resist waste liquid collected in the waste liquid recovery process from the resist film formation process that forms the resist film for thin film transistors on the substrate through the waste liquid recovery process that recovers and stores the resist waste liquid generated in the resist film formation process. A method for recovering and recycling a resist waste liquid for a thin film transistor, which is performed through all the steps leading to a regeneration step,
A method for recovering and recycling a resist waste liquid for a thin film transistor , wherein the resist waste liquid is handled in a temperature range of 9 to 21 ° C. in the resist film forming step and / or the waste liquid recovery step .
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