JP4338325B2 - Bump bonding equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention relates to a bump bonding apparatus that forms bumps for electrical connection on electrode pads of a semiconductor integrated circuit chip by ultrasonic bonding.
[0002]
[Prior art]
  Conventionally, a flip chip method is known as one of techniques for mounting a bare chip type semiconductor integrated circuit chip (IC chip) on a substrate. In the flip chip method, bumps for electrical connection are formed on electrode pads of an IC chip, and the bumps and wiring electrodes formed on the substrate are directly joined without using lead wires. As a bump forming technique in the flip chip method, a stud bump bonding technique in which a normal wire bonding technique is applied and a bump is formed on an electrode pad of an IC chip by ultrasonic bonding is known.
[0003]
  FIG. 20 shows a conventional bump bonding apparatus using the stud bump bonding technique. The bump bonding apparatus includes an IC chip supply unit 2 that supplies an IC chip 1, a heat stage 3 that includes a suction hole 3b that is vacuum-sucked by the vacuum pump 3a, and is sucked and held on the heat stage 3 by a suction hole 3b. A bonding head 4 for forming bumps on the IC chip 1 by ultrasonic bonding and an IC chip storage unit 6 for storing the IC chip 1 on which the bumps have been formed are provided. The bonding head 4 includes a bonding arm 4b that can rotate in the direction of arrow A on an XY table 4a, and an ultrasonic horn 4c is fixed to the bonding arm 4b. A bonding wire 4f supplied from a wire supply mechanism 4e is inserted into the capillary 4d fixed to the tip of the ultrasonic horn 4c. On the other hand, a vibration generation source (not shown) is connected to the proximal end side of the ultrasonic horn 4c. The bonding head 4 includes a bonding recognition device 4g.
[0004]
  Further, the bump bonding apparatus has a transport head 7a that can move in the X and Y directions, holds the IC chip 1 and carries it into the heat stage 3 from the IC chip supply unit 2, and the IC chip 1 on which bumps have been formed. A transfer device 7 is provided that holds and carries out the heat stage 3 to the IC chip storage unit 6. The transport head 7a includes a carry-in nozzle 7d and a carry-out nozzle 7e that are vacuum-sucked by vacuum pumps 7b and 7c, respectively. Furthermore, the bump bonding apparatus has a setting claw 8 a that has a setting claw 8 a that can move in the XY directions, and that positions the IC chip 1 on the heat stage 3.
[0005]
  Next, the operation of this bump bonding apparatus will be described.
  First, a supply tray 9 containing a plurality of IC chips 1 is supplied to an IC chip supply unit 2 from a loader (not shown). Further, the transport head 7a of the transport device 7 moves above the supply tray 9, and the IC chip 1 is sucked and held by the carry-in nozzle 7d. Thereafter, the transport head 7 a moves above the heat stage 3, and the IC chip 1 sucked and held by the carry-in nozzle 7 d is placed at a predetermined position on the heat stage 3. The IC chip 1 placed on the heat stage 3 from the transport head 7 a is positioned by the setting claw 8 a of the setting device 8.
[0006]
  After the positioning of the IC chip 1 by the setting device 8, the bonding process is executed. First, by melting the bonding wire 4f, the ball 4h formed at the tip of the capillary 4d descends onto the electrode pad of the IC chip 1 together with the capillary 4d. Further, after pressing the ball 4h against the electrode pad with a predetermined pressure, high frequency vibration is applied from the ultrasonic horn 4c to the ball 4h via the capillary 4d. The ball 4h is joined to the electrode pad by this high frequency vibration. Finally, the capillary 4d is raised and the vicinity of the bonding portion of the bonding wire 4f with the ball 4h is torn, and the bump 4 (see FIG. 11) is formed by the ball 4h and the bonding wire 4f remaining on the electrode pad.
[0007]
  The bump-formed IC chip 1 is sucked and held by the carry-out nozzle 7e of the transport head 7a, and is carried out from the heat stage 3 to the storage tray 11 of the IC chip storage unit 6. The storage tray 11 is carried out to an unloader (not shown).
[0008]
[Problems to be solved by the invention]
  Conventionally, the thickness T of the IC chip to which the bump bonding technique is applied has been about 0.4 to 0.6 mm. Further, the diameter D1 (see FIG. 21) of the suction port 10 of the carry-in nozzle 7d and the carry-out nozzle 7e and the diameter D2 of the suction hole 3a provided in the heat stage 3 were about 0.5 to 1.5 mm. . However, in recent years, IC chips have been made thinner, and IC chips having a thickness T of 0.1 mm or less (thickness T is about 0.05 mm for thin ones) are provided.
[0009]
  When the thin IC chip having a thickness T of 0.1 mm or less is adsorbed by the carry-in nozzle 7d or the carry-out nozzle 7e having the suction port 10 having the diameter D1 of about 0.5 to 1.5 mm, it is shown in FIG. Thus, the IC chip 1 bends. This bending may cause chip destruction due to wiring cutting in the IC chip 1.
[0010]
  Further, when the thin IC chip is sucked and held on the heat stage 3 by the suction hole 3a having the diameter D2 of about 0.5 to 1.5 mm, the IC chip 1 is bent and warped as shown in FIG. If there is such bending or warping, the ultrasonic vibration is not properly applied from the bonding head 4 to the IC chip 1, which may cause a defective quality of the bump 5.
[0011]
  Therefore, an object of the present invention is to provide a bump bonding apparatus capable of sucking and holding a thin IC chip having a thickness of 0.1 mm or less with a suction nozzle of a transport head without causing bending. Another object of the present invention is to provide a bump bonding apparatus capable of attracting and holding the thin IC chip on a heat stage without causing bending or warping.
[0012]
[Means for Solving the Problems]
  The present invention is placed on a heat block, mounted on a heat block, and includes a first porous part, a non-porous part inside the first porous part in plan view, and the non-porous part in plan view. A heat stage provided with a suction hole filled with a porous material having a second porous portion on the inside, disposed between the heat block and the heat stage, and at a position corresponding to the suction hole Plural including a through hole having a contour along the contour of the first porous portion and a through hole having a contour along the non-porous portion at a position corresponding to the suction hole Exchangeable adjustment plate, vacuum suction mechanism for sucking and holding the IC chip on the heat stage by the suction hole through the through hole of the adjustment plate, and IC chip sucked and held on the heat stage To form bumps on And the bonding head of
A bump bonding apparatus is provided.
[0013]
  BookIn the bump bonding apparatus of the invention, since the suction hole of the heat stage is filled with a porous material, the thin IC chip with a thickness of 0.1 mm or less is sucked and held without causing bending or warping by the suction hole. Can do. Therefore, it is possible to prevent a bonding failure caused by wiring breakage and chip destruction in the IC chip caused by bending, or defective transmission of ultrasonic vibration from the bonding head to the IC chip caused by warpage.
[0014]
  Also,IC chipSize ofBy changing the adjustment plate according to the law, it is possible to easily cope with changes in the type of IC chip.
[0015]
  The holes provided in the first and second porous portions preferably have a diameter of 0.01 mm to 0.1 mm.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
  Next, the present inventionReference formWill be described.
  1 and 2 show the present invention.Reference form1 shows a bump bonding apparatus according to FIG. The bump bonding apparatus includes an IC chip supply unit 21 that supplies an IC chip 1, a heat stage 22 on which the IC chip 1 is mounted, and a bonding head that forms bumps on the IC chip 1 on the heat stage 22 by ultrasonic bonding. 23, and an IC chip storage portion 24 in which the IC chip 1 on which bumps have been formed is stored. In addition, the bump bonding apparatus holds the IC chip 1 and carries it into the heat stage 22 from the IC chip supply unit 21 and also carries the bump-formed IC chip 1 and carries it out to the IC chip storage unit 24. A device 26 is provided. Further, the bump bonding apparatus includes a setting claw 27 a that has a setting claw 27 a that can move in the XY directions, and that positions the IC chip 1 on the heat stage 3.
[0017]
  The IC chip supply unit 21 is supplied with a supply tray 29 containing a plurality of IC chips 1 from a loader 28 (shown only in FIG. 1). The supply tray 29 includes a plurality of housing recesses 29a, and the IC chip 1 is housed in each housing recess 29a.
[0018]
  The heat stage 22 is fixed on the heat block 31 in which the heater 31a is accommodated. Further, the heat stage 22 is provided with a suction hole 22 a at the mounting position of the IC chip 1, and this suction hole 22 a is connected to a vacuum pump (vacuum suction mechanism) 32 for sucking the IC chip 1. . Further, a vacuum degree sensor 33 is provided for measuring the degree of vacuum in the path connecting the suction hole 22a and the vacuum pump 32.
[0019]
  As shown in FIG. 3 and FIG.This reference formThen, the suction hole 22a of the heat stage 22 is a square having a side length B of about 1.0 mm to 10 mm, and the outline in plan view is smaller than that of the IC chip 1. The suction hole 22a is filled with a porous material 70.This reference formIn this case, the porous material 70 is a ceramic sintered body, and a large number of fine holes are formed, and these holes have air permeability in the thickness direction. The diameter of these holes is 0.1 mm or less, preferably about 0.01 to 0.1 mm. Usually, when the hole diameter is 5 times or more the thickness of the IC chip 1, the IC chip bends. Therefore, assuming that the thickness of the IC chip 1 is 0.02 mm, the hole diameter is preferably 0.1 mm or less. On the other hand, if the hole diameter is set to 0.001 mm or less, the strength is insufficient. Therefore, the diameter of the hole is preferably about 0.01 to 0.1 mm as described above.
[0020]
  The bonding head 23 includes a bonding work mechanism 41, a wire supply mechanism 42, and a bonding recognition device 43.
[0021]
  As shown in FIGS. 5 and 6, the bonding work mechanism 41 includes an XY table 41b driven by an XY drive mechanism 41a, a base 41c fixed to the XY table 41b, and a shaft 41d with respect to the base 41c. And a bonding arm 41e supported rotatably. One end of the bonding arm 41e is connected to a head driving mechanism 41f made of a linear motor. The head drive mechanism 41f raises and lowers one end of the bonding arm 41e, whereby the bonding arm 41e rotates about the axis 41d as indicated by an arrow A. A titanium ultrasonic horn 41g is attached to the bonding arm 41e. Further, a displacement sensor 41h is attached to the bonding arm 41e.
[0022]
  A vibration source 41i made of a piezoelectric element is connected to the base end side of the ultrasonic horn 41g. The vibration generation source 41i generates ultrasonic vibration when a high frequency voltage is supplied from the high frequency voltage generator 41j. On the other hand, a capillary 41k is held on the tip side of the ultrasonic horn 41g. A gold bonding wire 44 supplied from the wire supply mechanism 42 is inserted into the hole passing through the capillary 41k in the axial direction, and the tip of the bonding wire 44 protrudes from the tip of the capillary 41k. The capillary 41k moves in the XY direction by moving the XY table 41b, and moves in the vertical direction in the figure by being driven by the head driving mechanism 41f and rotating the bonding arm 41e. A discharge torch 41m (shown only in FIG. 6) is disposed near the tip of the capillary 41k. A spark generator 41n is electrically connected to the discharge torch 41m.
[0023]
  The wire supply mechanism 42 includes a reel 42 a that stores the bonding wire 44 in a wound state, an air tensioner 42 b that applies tension to the bonding wire 44 by blowing air, and a clamper 42 c that holds the bonding wire 44. ing. The clamper 42c is fixed to the bonding arm 41e and moves together with the ultrasonic horn 41g.
[0024]
  The bonding recognition device 43 is disposed above the bonding arm 41e. The bonding recognition device 43 includes a recognition camera 43a, a lens barrel 43b, and a prism 43c, and the recognition camera 43a can photograph the IC chip 1 on the heat stage 22.
[0025]
  The transport device 26 includes a transport head 46 for holding the IC chip 1, an X-direction drive mechanism 47 for linearly moving the transport head 46 in the X direction, and a Y for moving the transport head 46 linearly in the Y direction. A direction drive mechanism 48 is provided.
[0026]
  The transport head 46 includes a carry-in nozzle (suction nozzle) 51 for sucking and holding the IC chip 1 when the IC chip supply unit 21 carries it into the heat stage 22, and a carry-out head 46 from the heat stage 22 to the IC chip storage unit 24. An unloading nozzle (suction nozzle) 52 that holds the IC chip 1 by suction is provided.
[0027]
  As shown in FIGS.This reference formThen, the suction ports 55 of the carry-in nozzle 51 and the carry-out nozzle 52 are squares having a side length B2 of about 1.0 mm to 10 mm, and the outline in plan view is smaller than that of the IC chip 1. The suction port 55 is filled with a porous material 63.This reference formThen, the porous material 63 is a ceramic sintered body similar to that filled in the adsorption hole 22a of the heat stage 22. That is, the ceramic sintered body has a large number of fine holes of 0.1 mm or less, preferably about 0.01 to 0.1 mm, and these holes have air permeability in the thickness direction.
[0028]
  As schematically shown in FIG. 9, the carry-in nozzle 51 is connected to the lower end of a hollow shaft 53 movably attached in the vertical direction (Z direction) with respect to the main body 46 a of the transport head 46. An upper end of the hollow shaft 53 protruding from the main body 46 a is connected to a first port 57 a of a three-port two-position type electromagnetic valve 57 via a joint 54 and a tube 56. The second port 57b and the third port 57c of the electromagnetic valve 57 are connected to a vacuum pump (vacuum suction mechanism) 58 and a blower (injection mechanism) 59, respectively. The solenoid valve 57 at the time of non-power feeding is in the position (first position) shown in FIG. 9, and the first port 57a and the second port 57b are in communication. Therefore, when the electromagnetic valve 57 is not powered, the carry-in nozzle 51 is vacuumed by the vacuum pump 58, and the IC chip 1 can be sucked and held. On the other hand, when the solenoid valve 57 is powered, the position of the solenoid valve 57 is switched, and the first port 57a and the third port 57c are communicated (second position). Therefore, the air supplied from the blower 59 is injected from the carry-in nozzle 51 when the electromagnetic valve 57 is fed. The tube 56 is provided with a vacuum degree sensor 61 for measuring the vacuum degree of the loading nozzle 51.
[0029]
  Further, the transport head 46 includes a Z-direction drive mechanism 62 for moving the carry-in nozzle 51 in the Z-axis direction (the direction of the axis L of the carry-in nozzle 51). The Z-direction drive mechanism 62 includes a flange 62 a fixed to the upper end side of the hollow shaft 53. A roller 62c provided at the tip of the lever 62b is in contact with the lower surface side of the flange 62a. On the other hand, the base end side of the lever 62b is rotatably attached to a shaft 62e protruding from the main body 46a of the transport head 46. A rotatable roller 62d is attached near the center of the lever 62b, and this roller 62d is in contact with an eccentric cam 62f disposed in the main body 46a. Further, the upper end of the spring 62g is connected to the distal end side of the lever 62b, and the lower end of the spring 62g is connected to the main body 46a. The lever 62b is elastically biased clockwise in FIG. 9 about the shaft 62e by the spring 62g, whereby the roller 62d and the eccentric cam 62f maintain contact. When the eccentric cam 62f is rotated clockwise by the driving motor 62h, the lever 62b is rotated clockwise, and the tip of the lever 62b is lowered. As a result, the loading nozzle 51 moves down together with the hollow shaft 53. On the other hand, when the eccentric cam 62f rotates counterclockwise by the motor 62h, the carry-in nozzle 51 rises.
[0030]
  A spring receiver 64 is fixed to the lower end side of the hollow shaft 53, and a spring 65 is compressed between the spring receiver 64 and the main body 46 a of the transport head 46. The loading nozzle 51 is elastically urged downward by the spring 65 in the drawing. On the other hand, the lever 62b is in contact with the lower surface of the flange 62a as described above, and does not restrain the upward movement of the hollow shaft 53. Therefore, when the tip of the carry-in nozzle 51 is pressed upward, the carry-in nozzle 51 rises together with the hollow shaft 53, but when this pressure is released, the carry-in nozzle 51 descends due to the repellent force of the spring 65. Return to position. That is, the carry-in nozzle 51 can be elastically retracted upward (in the direction of the axis L direction) in the drawing.
[0031]
  The peripheral structure of the carry-out nozzle 52 is the same as the peripheral structure of the carry-in nozzle 51 shown in FIG.
[0032]
  The X-direction drive mechanism 47 includes a ball screw (not shown) for moving the transport head 46 and the Y-direction drive mechanism 48 in the X direction, and a servo motor 47a that rotationally drives the ball screw. Similarly, the Y-direction drive mechanism 48 includes a ball screw (not shown) for moving the transport head 46 in the Y direction, and a servo motor 48a that rotationally drives the ball screw.
[0033]
  2 is based on input signals from sensors including a displacement sensor 41h and a bonding recognition device 43, the XY drive mechanism 41a, the head drive mechanism 41f, the X-direction drive mechanism 47, Y The device including the direction driving mechanism 48 and the electromagnetic valve 57 is controlled.
[0034]
  Next, the operation of the bump bonding apparatus will be described.
  First, after the transfer head 46 of the transfer device 26 moves onto the supply tray 29 of the IC chip supply unit 21, the Z-axis drive mechanism 62 loading nozzle 51 descends and is stored in one of the receiving recesses 29 a of the supply tray 29. The held IC chip 1 is sucked and held. Next, after the carry-in nozzle 51 rises, the transport head 46 moves in the horizontal direction (in the −X direction) from the IC chip supply unit 21 toward the heat stage 22.
[0035]
  as mentioned aboveThis reference formThen, the suction port 55 of the carry-in nozzle 51 is filled with a porous material 63, and the IC chip 1 is adsorbed by a plurality of fine holes provided in the porous material 66. That is, in the conventional bump bonding apparatus, as shown in FIG. 21, the IC chip 1 is sucked by the suction hole 10 having a small area having a diameter D1 of about 0.5 to 1.5 mm.This reference formIn the bump bonding apparatus, the IC chip 1 is attracted to the carry-in nozzle 51 by the attracting force acting almost uniformly from the porous material 63 having a relatively large area. Therefore, as shown in FIG. 7, the IC chip 1 is sucked and held by the loading nozzle 51 in a state where there is almost no bending, and it is possible to prevent wiring breakage and chip destruction in the IC chip 1 due to the bending.
[0036]
  The conveyance head 46 that sucks and holds the IC chip 1 moves above the heat stage 22, and the carry-in nozzle 51 descends to place the IC chip 1 at a predetermined position on the heat stage 22. Further, the IC chip 1 placed on the heat stage 22 is sucked and held by the suction holes 22 a of the heat stage 22.
[0037]
  as mentioned aboveThis reference formThen, the suction hole 22 a is filled with a porous material 70, and the IC chip 1 is sucked by a plurality of fine holes provided in the porous material 70. That is, in the conventional bump bonding apparatus, as shown in FIG. 22, the IC chip 1 is sucked by the suction holes 3b having a small area having a diameter D2 of about 0.5 to 1.5 mm.This reference formIn the bump bonding apparatus, the IC chip 1 is adsorbed to the adsorbing holes 22a by the adsorbing force acting almost uniformly from the porous material 70 having a relatively large area. Therefore, as shown in FIG. 3, the IC chip 1 is sucked and held on the heat stage 22 without being bent and warped. Therefore,This reference formIn this banff bonding apparatus, it is possible to prevent wiring breakage and chip breakage in the IC chip due to bending when the heat stage 22 is sucked and held. Further, it is possible to prevent defective transmission of ultrasonic vibration from the bonding head to the IC chip at the time of bump bonding, which will be described later, caused by warpage, and to prevent bonding failure caused by this defective transmission.
[0038]
  Next, transfer of the IC chip 1 from the carry-in nozzle 51 to the heat stage 22 will be described in detail with reference to FIG. The carry-in nozzle 51 starts to descend by the Z-direction drive mechanism 62 at time t1, and reaches the lower limit position at time t2. At the time of the descent, the amount of descent by the Z-direction drive mechanism 62 is set larger than the distance from the origin position of the loading nozzle 51 to the lower limit position. As a result, the tip of the loading nozzle 51 that sucks and holds the IC chip 1 is pressed against the heat stage 22, and the loading nozzle 51 retreats upward with respect to the main body 46 a against the repellent force of the spring 65 together with the hollow shaft 53. . Therefore, if the amount of descent is set as described above, the IC chip 1 can be reliably brought into contact with the heat stage 22 even if the thickness of the IC chip 1 varies.
[0039]
  After the IC chip 1 comes into contact with the heat stage 22 at time t2, vacuum suction of the suction hole 22a by the vacuum pump 32 is started at time t3. After the vacuum degree sensor 33 detects that the suction pressure in the suction hole 22a has reached a predetermined vacuum degree at time t4, power supply to the electromagnetic valve 57 is started and switched to the second position at time t5. By this switching, the loading nozzle 51 is disconnected from the vacuum pump 58 and connected to the blower 59. As a result, the suction pressure of the suction hole 22a, which was negative before the switching, increases to a positive pressure, and air is ejected from the carry-in nozzle 51, and the IC chip 1 is ejected from the carry-in nozzle 51 by the jetted air. It is forcibly peeled off. Finally, at time t6, the carry-in nozzle 51 is raised to the origin position by the Z-direction drive mechanism 62, and the IC chip 1 adsorbed at a predetermined position by the adsorption hole 22a remains on the heat stage 22.
[0040]
  As described above, when the IC chip 1 is transferred from the carry-in nozzle 51 to the heat stage 22, the IC chip 1 is always sucked and held in one of the carry-in nozzle 51 and the suction hole 22 a of the heat stage 22. Further, after the suction by the suction hole 22a is started, the IC chip 1 is forcibly separated from the carry-in nozzle 51 by the air jetted from the blower 59. Therefore, the IC chip 1 can be transferred from the carry-in nozzle 51 to the heat stage 22 while more reliably preventing the bending and warping.
[0041]
  When the position of the IC chip 1 placed by the heat stage 22 from the loading nozzle 51 is out of the recognition range of the bonding recognition device 43, the position of the IC chip 1 is corrected by the restriction device 27. The IC chip 1 is sucked and held on the heat stage 22 by the suction holes 22a.
[0042]
  After the IC chip 1 is sucked and held on the heat stage 22 as described above, bump bonding is performed by the bonding head 23. First, as shown in FIG. 11A, the tip of the bonding wire 44 protruding from the capillary 41k is melted by a spark current generated between the discharge torch 41m and a ball 44a is formed. Next, the ball 44a (the tip of the capillary 41k) is pressed against the electrode pad 1a of the IC chip 1 with a predetermined pressure. The ultrasonic vibration generated by the vibration source 41i is transmitted as a longitudinal wave from the proximal end side to the distal end side of the ultrasonic horn 41g, and is applied to the ball 44a through the capillary 41k. As a result, as shown in FIG. 11B, the ball 44a is bonded to the electrode pad 1a. Thereafter, the clamper 42c that holds the bonding wire 44 rises, and as shown in FIG. 11C, the bonding wire 44 is torn near the joint portion with the ball 44a. A bump 66 is formed by the ball 44a bonded to the electrode pad 1a and the bonding wire 44 remaining on the ball 44a side. The above bump bonding is repeated for a plurality of necessary portions of the IC chip 1.
[0043]
  After the bump bonding is completed, the transport head 46 moves above the heat stage 22, and the IC chip 1 on which the bump is formed is sucked and held by the carry-out nozzle 52. As described above, the suction port 55 of the carry-out nozzle 52 is filled with the porous material 63, and the IC chip 1 is adsorbed by a plurality of fine holes provided in the porous material 66. Therefore, it is possible to prevent the IC chip 1 from being bent when it is sucked and held by the carry-out nozzle 52, and it is possible to prevent the cutting of the wiring in the IC chip 1 and the destruction of the chip due to this bending.
[0044]
  The transport head 46 moves to the IC chip storage section 24, and the IC chip 1 on which bumps have been formed is stored in the storage recess 67a of the storage tray 67 from the carry-out nozzle 52. The storage tray 67 is carried out to an unloader 68 (shown only in FIG. 1).
[0045]
  FIGS. 12A and 12B show a modification of the carry-in nozzle 51 and the carry-out nozzle 52. In the modification of FIG. 12A, the carry-in nozzle 51 and the carry-out nozzle 52 include one circular suction port 55, and the suction port 55 is filled with a porous material 63. On the other hand, in the modified example of FIG. 12B, the carry-in nozzle 51 and the carry-out nozzle 52 include four circular suction ports 55, and each suction port 55 is filled with a porous material 63. The shape, size, and number of the suction ports 55 of the carry-in nozzle 51 and the carry-out nozzle 52 are not limited to these examples, and may be set so that the suction force acts uniformly on the IC chip IC1.
[0046]
  13 to 15 show modified examples of the suction holes 22 a of the heat stage 22. In the modification of FIG. 13, the shape and dimensions of the suction hole 22 a in plan view are set so that the outline thereof substantially matches the outline of the IC chip 1. Further, in the modification of FIG. 14, the size and shape of the suction hole 22 a in plan view are set so that the contour is larger than the contour of the IC chip 1. Further, in the modification of FIG. 15A, the heat stage 22 is provided with one circular suction hole 22a, and the suction hole 22a is filled with the porous material 70. Furthermore, in the modification of FIG. 15B, the heat stage 22 is provided with four circular suction holes 22a, and each suction hole 22a is filled with a porous material 70. The shape, size, and number of the suction holes 22 a are not limited to these examples, and may be set so that the suction force acts uniformly on the IC chip 1.
[0047]
  The present invention shown in FIGS.The fruitIn the bump bonding apparatus of the embodiment, the adjustment plate 81 is placed on the heat block 31, and the heat stage 22 is placed on the adjustment plate 81. The heat block 31, the adjustment plate 81, and the heat stage 22 are provided with screw holes 31b, 81a, and 22b, respectively, and these can be fixed together by screws 82 inserted through the screw holes 31b, 81a, and 22b. It is like that.
[0048]
  The heat stage 22 is provided with a square suction hole 22a, and the suction hole 22a is filled with a porous material 83. As shown most clearly in FIG. 18, the porous material 83 includes a rectangular frame-shaped first porous portion 83a located on the outermost side in plan view, and an inner side of the first porous portion 83a. A non-porous portion 83b having a rectangular frame shape and a second porous portion 83c having a square shape inside the non-porous portion 83b are provided. Among these, the first and second porous portions 83a and 83c have a large number of fine pores of about 0.01 to 0.1 mm and have air permeability, but the non-porous portion 83b has such pores. Not breathable. The non-porous portion 83b may be formed by clogging the pores of the porous material 83, or may be formed of a non-porous material separate from the first and second porous portions 83a and 83c. Good.
[0049]
  The adjustment plate 81 is provided with a through hole 81 b corresponding to the suction hole 22 a of the heat stage 22. A plurality of types of adjustment plates 81 having different shapes, dimensions, and thicknesses T ′ of the through holes 81b are prepared. As described later, the adjustment plates 81 are exchanged according to the shapes, dimensions, and thicknesses T of the IC chip 1. Used.
[0050]
  The heat block 31 includes a heater 31 a and a path 31 c for communicating the suction hole 22 a of the heat stage 22 with the vacuum pump 32 through the through hole 81 b of the adjustment plate 81.
[0051]
  Next, replacement of the adjustment plate 81 will be described. First, as shown in FIG. 16, when the IC chip 1 whose outline in plan view substantially matches the outline of the porous material 83 is sucked and held, the outline in plan view of the through hole 81b is the suction hole 22a. An adjustment plate 81 that is substantially matched is used. In this case, when the suction hole 22a is vacuum sucked by the vacuum pump 32, the IC chip 1 is sucked by the first and second porous portions 83a and 83c. On the other hand, since the non-porous portion 83b does not have air permeability, the IC chip 1 is not sucked even when the vacuum pump 32 is operated. However, the area of the portion corresponding to the nonporous portion 83b in the entire area of the IC chip 1 is smaller than the areas corresponding to the first and second porous portions 83a and 83c, and the nonporous portion. Since 83b is formed between the first porous portion 83a and the second porous portion 83c, the IC chip 1 is adsorbed and held by the porous material 83 without causing bending or warping.
[0052]
  Next, as shown in FIG. 19A, the outline in plan view is the same as that of the IC chip 1 in FIG. 16, but the IC chip 1 having a large thickness T is sucked and held. Although the shape of 81b is the same as that of FIG. 16, the adjustment plate 81 with small thickness T 'should just be used. By using the adjustment plate 81 having a small thickness T ′, the vertical position of the upper surface of the IC chip 1 can be kept constant even when the IC chip 1 having a large thickness T is used. On the contrary, when an IC chip 1 having a thickness T smaller than that of the IC chip 1 of FIG. 16 is sucked and held, an adjustment plate 81 having a thickness T ′ larger than that of FIG. 16 may be used.
[0053]
  Further, as shown in FIG. 19B, when the IC chip 1 having a smaller outline in plan view than the IC chip 1 in FIG. 16 and along the non-porous portion 83b is sucked and held. The adjustment plate 81 having a relatively small through hole 81b whose contour in plan view is along the non-porous portion 83b may be used. In this case, when the vacuum pump 32 is operated, the IC chip 1 is adsorbed and held by the second porous portion 83c without causing bending or warping. In addition, since the first porous portion 83a located outside the IC chip 1 in plan view does not face the through hole 81b, there is no inflow of air from the first porous portion 83a to the path 31c. The loss of suction force can be prevented by the vacuum pump 32.
[0054]
  As aboveBookIn the embodiment, by changing the adjustment plate according to the size, shape, and thickness of the IC chip 1, it is possible to easily cope with a change in the type of the IC chip.BookOther configurations and operations of the embodiment are as described above.Reference formIt is the same.
[0055]
  The present invention is not limited to the above embodiment, and various modifications are possible.
  For example, in the above embodiment, the porous materials 70 and 63 filled in the suction holes 22a of the heat stage 22 and the suction ports 55 of the carry-in nozzle 51 and the carry-out nozzle 52 are made of a ceramic sintered body. A sintered body of metal powder may be used as long as it has fine holes of about 0.1 mm. Moreover, you may use the porous material comprised by laminating | stacking the board | plate material which provided many fine holes about 0.01-0.1 mm fine.
[0056]
【The invention's effect】
  As is clear from the above description, the bump bonding apparatus of the present inventionTheSince the suction hole of the gate stage is filled with a porous material, even a relatively thin IC chip having a thickness of 0.1 mm or less can prevent bending and warping during suction holding. Therefore, HiIt is possible to prevent bonding failure caused by wiring cutting or chip destruction in the IC chip due to bending of the IC chip in the hot stage and transmission failure of ultrasonic vibration due to warping of the IC chip in the heat stage.Further, by changing the adjustment plate according to the dimensions of the IC chip, it is possible to easily cope with changes in the type of IC chip.
[Brief description of the drawings]
FIG. 1 of the present inventionReference formIt is a perspective view which shows the bump bonding apparatus which concerns on this.
[Figure 2]Reference formIt is a principal part perspective view which shows the bump bonding apparatus which concerns on.
FIG. 3 is a schematic sectional view showing a heat stage.
FIG. 4 is a partial plan view showing a heat stage.
FIG. 5 is a side view showing a bonding head.
FIG. 6 is a front view showing a bonding head.
FIG. 7 is a partial cross-sectional view showing a carry-in nozzle and a carry-out nozzle.
FIG. 8 is a bottom view showing an IC chip and a carry-in nozzle.
FIG. 9 is a schematic diagram illustrating a transport head.
FIG. 10 is a diagram for explaining a suction operation when an IC chip is transferred from a carry-in head to a heat stage.
11A and 11B show bump bonding, where FIG. 11A is a cross-sectional view showing a ball forming step, FIG. 11B is a cross-sectional view showing a step of bonding a ball to an electrode pad, and FIG. 11C is a cross-sectional view showing a bonding wire cutting step; FIG.
FIGS. 12A and 12B are bottom views showing modifications of the carry-in nozzle and the carry-out nozzle.
13A and 13B show a modification of the suction hole, in which FIG. 13A is a sectional view of a heat stage, and FIG. 13B is a partial plan view of the heat stage.
14A and 14B show a modification of the suction hole, in which FIG. 14A is a sectional view of the heat stage, and FIG. 14B is a partial plan view of the heat stage.
FIGS. 15A and 15B are partial plan views of a heat stage showing a modification of the suction holes. FIGS.
FIG. 16 shows the present invention.The fruitIt is sectional drawing which shows the heat stage of the bump bonding apparatus which concerns on embodiment.
17 is an exploded perspective view of the heat stage of FIG. 16. FIG.
18 is a partial plan view of the heat stage in FIG. 16. FIG.
19A and 19B are cross-sectional views of the heat stage of FIG. 16 showing a state in which the adjustment plate has been replaced.
FIG. 20 is a perspective view showing a main part of a conventional bump bonding apparatus.
FIG. 21 is a cross-sectional view showing a suction nozzle in a conventional bump bonding apparatus.
FIG. 22 is a cross-sectional view showing a heat stage in a conventional bump bonding apparatus.
[Explanation of symbols]
  21 IC chip supply section
  22 Heat stage
  22a Suction hole
  23 Bonding head
  24 IC chip storage
  26 Conveyor
  27 Regulatory device
  27a Restriction claw
  28 Loader
  29 Supply tray
  29a receiving recess
  30 controller
  31 Heat block
  31a heater
  32 Vacuum pump
  33 Vacuum sensor
  41 Bonding work mechanism
  41a XY drive mechanism
  41b XY table
  41c base
  41d axis
  41e Bonding arm
  41f Head drive mechanism
  41g ultrasonic horn
  41h Displacement sensor
  41i Vibration source
  41j high frequency voltage generator
  41k capillary
  41m discharge torch
  41n Spark generator
  42 Wire supply mechanism
  42a reel
  42b Air tensioner
  42c Clamper
  43 Bonding recognition device
  43a Recognition camera
  43b Tube
  43c prism
  44 Bonding wire
  44a ball
  46 Transport head
  46a body
  47 X direction drive mechanism
  47a Servo motor
  48 Y direction drive mechanism
  48a Servo motor
  51 Nozzle for carrying in
  52 Nozzle for carrying out
  53 Hollow shaft
  54 Joint
  56 tubes
  57 Solenoid valve
  57a 1st port
  57b Second port
  57c 3rd port
  58 Vacuum pump
  59 Blower
  61 Vacuum degree sensor
  62 Z-direction drive mechanism
  62a flange
  62b lever
  62c, 62d roller
  62e shaft
  62f Eccentric cam
  62g spring
  62h motor
  63, 70, 83 Porous material
  64 Spring support
  65 Spring
  66 Bump
  67 Storage tray
  67a receiving recess
  81 Adjustment plate
  81a Through hole

Claims (2)

A first porous part, a non-porous part inside the first porous part in a plan view, and a second inside the non-porous part in a plan view. A heat stage provided with suction holes filled with a porous material comprising a porous part; and
The one provided between the heat block and the heat stage and provided with a through hole having a contour along the contour of the first porous portion at a position corresponding to the suction hole, and the suction hole A plurality of exchangeable adjustment plates including a through hole having a contour along the non-porous portion at a position;
A vacuum suction mechanism for sucking and holding the IC chip on the heat stage by the suction hole through the through hole of the adjustment plate;
A bonding head for forming bumps on the IC chip sucked and held on the heat stage;
A bump bonding apparatus comprising: The bump bonding apparatus according to claim 1, wherein the holes provided in the first and second porous portions have a diameter of 0.01 mm to 0.1 mm.

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