JP4330464B2 - Power semiconductor device - Google Patents

Power semiconductor device Download PDF

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Publication number
JP4330464B2
JP4330464B2 JP2004039701A JP2004039701A JP4330464B2 JP 4330464 B2 JP4330464 B2 JP 4330464B2 JP 2004039701 A JP2004039701 A JP 2004039701A JP 2004039701 A JP2004039701 A JP 2004039701A JP 4330464 B2 JP4330464 B2 JP 4330464B2
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lid
power semiconductor
control system
semiconductor device
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JP2005235833A (en
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聖司 佐伯
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Description

本発明は電力用半導体装置に関し、特に、制御系基板の固定手段を備えた電力用半導体装置に関する。   The present invention relates to a power semiconductor device, and more particularly to a power semiconductor device provided with a control substrate fixing means.

電力用半導体装置では、ＩＧＢＴ等の電力用半導体素子と、かかる電力用半導体素子を制御する制御系基板とが筐体内に配置される構造（例えば、特許文献１）に加え、使用態様に応じて、筐体の外部にかかる制御系基板を配置して、筐体外部から筐体内の電力用半導体素子を制御することが行なわれている。
特開２００２−７６２５５号公報 In a power semiconductor device, in addition to a structure in which a power semiconductor element such as an IGBT and a control system substrate that controls the power semiconductor element are arranged in a housing (for example, Patent Document 1), depending on the usage mode A control system board is arranged outside the casing, and the power semiconductor element in the casing is controlled from the outside of the casing.
JP 2002-76255 A

しかしながら、電力用半導体装置の近傍に制御系基板を固定するためには、例えば、電力用半導体装置が固定されるフレーム等に、制御系基板を固定するための固定具等を別途設ける必要があった。また、設計変更等で電力用半導体装置の取り付け位置が変わった場合には、固定具等の取り付け位置も変更する必要があった。   However, in order to fix the control system board in the vicinity of the power semiconductor device, for example, it is necessary to separately provide a fixture or the like for fixing the control system board on a frame to which the power semiconductor device is fixed. It was. In addition, when the mounting position of the power semiconductor device is changed due to a design change or the like, it is also necessary to change the mounting position of the fixture or the like.

そこで、本発明は、制御系基板を筐体外部に固定する固定手段を備えた電力用半導体装置の提供を目的とする。   Accordingly, an object of the present invention is to provide a power semiconductor device provided with a fixing means for fixing a control system substrate to the outside of the housing.

本発明は、制御系基板で制御される電力用半導体装置であって、開口部を有するケース部と、ケース部の開口部を閉じる蓋部とからなる筐体と、筐体の内部に配置された電力用半導体素子とを含み、蓋部が、筐体の外部に制御系基板を固定する固定手段を有し、固定手段が、制御系基板を蓋部から間隔を置いて支持するスペーサと、スペーサを貫通し、制御系基板を蓋部に固定するねじ部とを含むことを特徴とする電力用半導体装置である。   The present invention is a power semiconductor device controlled by a control system board, and is disposed inside a casing including a case having an opening and a lid that closes the opening of the case. A power semiconductor element, and the lid portion has a fixing means for fixing the control system substrate to the outside of the housing, and the fixing means supports the control system substrate at a distance from the lid portion, A power semiconductor device including a screw portion that penetrates the spacer and fixes the control system substrate to the lid portion.

固定手段は、制御系基板を蓋部から間隔を置いて支持する蓋部に固定されたスペーサと、制御系基板をスペーサに固定するタッピングねじとを含むものであっても良く、または、制御系基板を蓋部から間隔を置いて支持するスペーサからなり、スペーサが、制御系基板を挿入して固定する切欠き部を有するものであっても良い。
The fixing means may include a spacer fixed to the lid portion that supports the control system substrate at a distance from the lid portion, and a tapping screw that fixes the control system substrate to the spacer. The spacer may be a spacer that supports the substrate at a distance from the lid, and the spacer may have a notch for inserting and fixing the control system substrate.

このように、本発明にかかる電力用半導体装置では、蓋部に固定手段が設けられているため、制御系基板の固定を容易に行なうことができる。   Thus, in the power semiconductor device according to the present invention, since the fixing means is provided in the lid, the control system substrate can be easily fixed.

実施の形態１．
図１は、全体が１００で表される、本発明の実施の形態１にかかる電力用半導体装置であり、図１（ａ）に上面図を、図１（ｂ）に、図１（ａ）のＩ−Ｉ方向に見た断面図をそれぞれ示す。 Embodiment 1 FIG.
FIG. 1 shows a power semiconductor device according to a first embodiment of the present invention, the whole being represented by 100. FIG. 1 (a) is a top view, and FIG. 1 (b) is FIG. 1 (a). Sectional drawing seen in II direction of each is shown.

電力用半導体装置１００は、ケース部１０と蓋部２０から形成されて筐体３０を含む。ケース部１０と蓋部２０は、例えばＰＰＳ（Polyphenylene Sulfide）から形成される。ケース部１０には、外部に設けられた制御用素子（図示せず）と接続するための端子５や、電力入出力用の端子１２が設けられている。   The power semiconductor device 100 includes a casing 30 formed from a case portion 10 and a lid portion 20. The case portion 10 and the lid portion 20 are made of, for example, PPS (Polyphenylene Sulfide). The case portion 10 is provided with a terminal 5 for connection to a control element (not shown) provided outside and a terminal 12 for power input / output.

ケース部１０の内部の底面には、絶縁基板１が固定されている。絶縁基板１の上にはＩＧＢＴやＦＷＤｉ等の電力用半導体素子２が設けられている。電力用半導体素子２は、金等のボンディングワイヤ３を介して電極４や端子５に接続されている。   The insulating substrate 1 is fixed to the bottom surface inside the case portion 10. A power semiconductor element 2 such as IGBT or FWDi is provided on the insulating substrate 1. The power semiconductor element 2 is connected to an electrode 4 and a terminal 5 via a bonding wire 3 such as gold.

ケース部１０の開口部は、蓋部２０により閉じられる。蓋部２０は、例えば４箇所に設けられたねじ２１によりケース部１０に固定される。また、蓋部２０には、４つのナット２２が固定されている。   The opening of the case unit 10 is closed by the lid unit 20. The lid portion 20 is fixed to the case portion 10 with screws 21 provided at, for example, four locations. In addition, four nuts 22 are fixed to the lid portion 20.

図２は電力用半導体装置１００の蓋部２０であり、図２（ａ）は上面図を、図２（ｂ）は図２（ａ）をII−II方向に見た断面図を示す。また、図２（ｃ）は、蓋部２０の上に制御系基板２５を固定した場合の断面図である。   2 shows the lid 20 of the power semiconductor device 100, FIG. 2 (a) is a top view, and FIG. 2 (b) is a cross-sectional view of FIG. 2 (a) in the II-II direction. FIG. 2C is a cross-sectional view when the control system board 25 is fixed on the lid 20.

図２（ｂ）に示すように、蓋部２０には４つのナット２２が設けられており、ナット２２は、ボルト２４と噛合うようになっている。かかるナット２２とボルト２４を用いることにより、制御用素子２６を搭載した制御系基板２５が、蓋部２０に固定できる。   As shown in FIG. 2 (b), the cover portion 20 is provided with four nuts 22, and the nuts 22 mesh with the bolts 24. By using the nut 22 and the bolt 24, the control system substrate 25 on which the control element 26 is mounted can be fixed to the lid portion 20.

図２（ｃ）は、制御系基板２５が蓋部２０に固定された状態の断面図である。蓋部２０の上には、円筒状のスペーサ２３が配置され、その上に制御系基板２５が載置されている。スペーサ２３は、例えば、蓋部２０と同じＰＰＳから形成される。制御系基板２５には孔部が設けられ、孔部を通ったボルト２４が、スペーサ２３を貫通してナット２２と噛合う。これにより、制御系基板２５が蓋部２０の表面と平行に、蓋部２０の表面から所定の間隔をおいて固定される。   FIG. 2C is a cross-sectional view of the state in which the control system substrate 25 is fixed to the lid portion 20. A cylindrical spacer 23 is disposed on the lid 20, and a control system substrate 25 is placed thereon. The spacer 23 is formed from, for example, the same PPS as the lid portion 20. A hole is provided in the control system substrate 25, and the bolt 24 passing through the hole penetrates the spacer 23 and meshes with the nut 22. As a result, the control system substrate 25 is fixed in parallel to the surface of the lid 20 at a predetermined interval from the surface of the lid 20.

なお、図２には記載していないが、蓋部２０はねじ２１によりケース部１０に固定される。これにより、電力用半導体装置１００の筐体３０の上に、電力用半導体装置１００の電力用半導体素子２を制御する制御系基板２５を固定した構造を提供できる。   Although not shown in FIG. 2, the lid portion 20 is fixed to the case portion 10 with screws 21. Thus, a structure in which the control system substrate 25 that controls the power semiconductor element 2 of the power semiconductor device 100 is fixed on the housing 30 of the power semiconductor device 100 can be provided.

かかる電力用半導体装置１００では、制御系基板２５を固定する手段を、電力用半導体装置１００の近傍に別途設ける必要がない。また、設計変更等により電力用半導体装置１００の位置が移動した場合でも、制御系基板２５の取り付け位置の変更は不要となる。   In the power semiconductor device 100, it is not necessary to separately provide a means for fixing the control system substrate 25 in the vicinity of the power semiconductor device 100. Even when the position of the power semiconductor device 100 is moved due to a design change or the like, it is not necessary to change the attachment position of the control system substrate 25.

なお、電力用半導体装置１００では、制御系基板２０を固定する必要の無い場合には、蓋部２０を裏返して取りつけることができる。これにより、筐体３０内にナット２２を収納し、蓋部２０の表面を平坦にすることができる。   In the power semiconductor device 100, when the control system substrate 20 does not need to be fixed, the lid portion 20 can be turned over and attached. Thereby, the nut 22 can be accommodated in the housing | casing 30, and the surface of the cover part 20 can be made flat.

なお、以下で述べる実施の形態２〜５においても、本実施の形態１にかかる電力用半導体装置１００と同様の効果を得ることができる。   In the second to fifth embodiments described below, the same effects as those of the power semiconductor device 100 according to the first embodiment can be obtained.

実施の形態２．
図３は電力用半導体装置１００に用いられる他の蓋部４０であり、図３（ａ）は上面図を、図３（ｂ）は図３（ａ）をIII−III方向に見た断面図を示す。また、図３（ｃ）は、蓋部４０の上に制御系基板２５を固定した場合の断面図である。 Embodiment 2. FIG.
3 shows another lid 40 used in the power semiconductor device 100. FIG. 3A is a top view, and FIG. 3B is a cross-sectional view of FIG. 3A in the III-III direction. Indicates. FIG. 3C is a cross-sectional view when the control system board 25 is fixed on the lid 40.

本実施の形態２では、図３（ｂ）に示すように、蓋部４０に４つのナット４２が設けられるとともに、スペーサ４３が蓋部４０に固定されている。スペーサ４３は、蓋部４０に接着しても良いが、好適には蓋部４０と一体成形される。他の構造は、上述の蓋部２０と同じである。   In the second embodiment, as shown in FIG. 3B, four nuts 42 are provided on the lid portion 40 and the spacer 43 is fixed to the lid portion 40. The spacer 43 may be bonded to the lid 40, but is preferably integrally formed with the lid 40. Other structures are the same as those of the lid 20 described above.

このように、スペーサ４３を蓋部４０に接着し、特に蓋部４０と一体成形することにより、部品点数が減少するとともに、ボルト止めの作業性が向上し、制御系基板２の脱着が容易になる。   As described above, the spacer 43 is bonded to the lid portion 40, and particularly formed integrally with the lid portion 40, so that the number of parts is reduced and the workability of the bolting is improved, and the control system board 2 can be easily attached and detached. Become.

実施の形態３．
図４は電力用半導体装置１００に用いられる他の蓋部５０であり、図４（ａ）は上面図を、図４（ｂ）は図４（ａ）をIＶ−IＶ方向に見た断面図を示す。また、図４（ｃ）は、蓋部５０の上に制御系基板２５を固定した場合の断面図である。 Embodiment 3 FIG.
4 shows another lid 50 used in the power semiconductor device 100. FIG. 4A is a top view, and FIG. 4B is a cross-sectional view of FIG. 4A in the IV-IV direction. Indicates. FIG. 4C is a cross-sectional view when the control system board 25 is fixed on the lid 50.

本実施の形態３では、図４（ｂ）に示すように、上述の蓋部４０のナット４３に換えて、ボルト５４を蓋部５０に設ける。他の構造は、上述の蓋部４０と同じであり、ボルト５４の下部はスペーサ５３に覆われている。   In the third embodiment, as shown in FIG. 4B, a bolt 54 is provided on the lid 50 instead of the nut 43 of the lid 40 described above. The other structure is the same as that of the lid 40 described above, and the lower part of the bolt 54 is covered with the spacer 53.

このように、ナットに換えてボルト５４を蓋部５０に設けることにより、更に、制御系基板２５を蓋部５０に固定する際の位置合わせが容易となる。   Thus, by providing the bolts 54 in the lid 50 instead of the nuts, the positioning when the control system substrate 25 is fixed to the lid 50 is further facilitated.

実施の形態４．
図５は電力用半導体装置１００に用いられる他の蓋部６０であり、図５（ａ）は上面図を、図（ｂ）は図５（ａ）をＶ−Ｖ方向に見た断面図を示す。また、図５（ｃ）は、蓋部６０の上に制御系基板２５を固定した場合の断面図である。 Embodiment 4 FIG.
5A and 5B show another lid 60 used in the power semiconductor device 100. FIG. 5A is a top view, and FIG. 5B is a cross-sectional view of FIG. 5A in the VV direction. Show. FIG. 5C is a cross-sectional view when the control system board 25 is fixed on the lid 60.

本実施の形態４では、図５（ｂ）に示すように、スペーサ６３が蓋部６０に固定されている。スペーサ６３は蓋部６０に接着されても良いが、一体成形されることが好ましい。スペーサ６３には、ねじ孔６４が設けられていることが好ましい。   In the fourth embodiment, the spacer 63 is fixed to the lid portion 60 as shown in FIG. The spacer 63 may be bonded to the lid 60, but is preferably integrally formed. The spacer 63 is preferably provided with a screw hole 64.

本実施の形態４では、図５（ｃ）に示すように、タッピングねじ６５を用いて制御系基板２５を蓋部６０に取り付ける。   In the fourth embodiment, as shown in FIG. 5C, the control system substrate 25 is attached to the lid 60 using a tapping screw 65.

このように、タッピングねじ６５を用いることにより、制御系基板２５の取り付け構造を簡略化でき、コストの削減を図ることができる。   Thus, by using the tapping screw 65, the mounting structure of the control system board 25 can be simplified, and the cost can be reduced.

実施の形態５．
図６は電力用半導体装置１００に用いられる他の蓋部７０であり、図６（ａ）は上面図を、図６（ｂ）は図６（ａ）をＶI−ＶI方向に見た断面図を示す。また、図６（ｃ）は、蓋部７０の上に制御系基板２５を固定した場合の断面図である。 Embodiment 5 FIG.
6A and 6B show another lid 70 used in the power semiconductor device 100. FIG. 6A is a top view, and FIG. 6B is a cross-sectional view of FIG. 6A in the VI-VI direction. Indicates. FIG. 6C is a cross-sectional view when the control system board 25 is fixed on the lid 70.

本実施の形態５では、図６（ｂ）に示すように、４つの、四角柱のスペーサ７３が、蓋部７０の上に形成されている。スペーサ７３は蓋部７０に接着されても良いが、一体成形されることが好ましい。また、スペーサ７３は、円柱等の他の形状としても良い。   In the fifth embodiment, as shown in FIG. 6B, four quadrangular prism spacers 73 are formed on the lid 70. The spacer 73 may be bonded to the lid 70, but is preferably integrally formed. The spacer 73 may have another shape such as a cylinder.

更に、各スペーサ７３は、制御系基板２５の角部が挿入される切欠き部７４を備える。例えば、図６（ａ）に破線で示すように、４つのスペーサ７３が切欠き部７４を備えることにより、制御系基板２５の４角を切欠き部７４に挿入して固定できる。   Furthermore, each spacer 73 includes a notch 74 into which a corner of the control system substrate 25 is inserted. For example, as shown by a broken line in FIG. 6A, the four spacers 73 include the notch portions 74, so that the four corners of the control system substrate 25 can be inserted into the notch portions 74 and fixed.

このように、切欠き部７４を備えたスペーサ７３を用いることにより、制御系基板２５を固定するための部品点数を減らすことができる。更に、かかる構造では、ねじを用いていないため、制御系基板２５の着脱を容易に行なうことができる。   Thus, by using the spacer 73 having the notch 74, the number of parts for fixing the control system board 25 can be reduced. Furthermore, since such a structure does not use screws, the control system board 25 can be easily attached and detached.

なお、実施の形態１〜５では、蓋部に設けられたスペーサが４つの場合について説明したが、これに限定されるものではない。   In addition, although Embodiment 1-5 demonstrated the case where the spacer provided in the cover part was four, it is not limited to this.

本発明の実施の形態１にかかる電力用半導体装置を示す。1 shows a power semiconductor device according to a first embodiment of the present invention. 本発明の実施の形態１にかかる電力用半導体装置の蓋部を示す。1 shows a lid of a power semiconductor device according to a first embodiment of the present invention. 本発明の実施の形態２にかかる電力用半導体装置の蓋部を示す。The cover part of the semiconductor device for electric power concerning Embodiment 2 of this invention is shown. 本発明の実施の形態３にかかる電力用半導体装置の蓋部を示す。7 shows a lid of a power semiconductor device according to a third embodiment of the present invention. 本発明の実施の形態４にかかる電力用半導体装置の蓋部を示す。10 shows a lid of a power semiconductor device according to a fourth embodiment of the present invention. 本発明の実施の形態５にかかる電力用半導体装置の蓋部を示す。10 shows a lid of a power semiconductor device according to a fifth embodiment of the present invention.

符号の説明Explanation of symbols

１ 絶縁基板、２ 電力用半導体素子、３ ボンディングワイヤ、４ 電極、５ 端子、１０ ケース部、１２ 端子、２０ 蓋部、２１ ねじ、２２ ナット、２３ スペーサ、２４ ボルト、２５ 制御系基板、２６ 制御用素子、３０ 筐体、１００ 電力用半導体装置。
DESCRIPTION OF SYMBOLS 1 Insulation board | substrate, 2 Power semiconductor element, 3 Bonding wire, 4 Electrode, 5 Terminal, 10 Case part, 12 terminal, 20 Lid part, 21 Screw, 22 Nut, 23 Spacer, 24 Volt, 25 Control system board, 26 Control Element, 30 housing, 100 power semiconductor device.

Claims (7)

制御系基板で制御される電力用半導体装置であって、
開口部を有するケース部と、該ケース部の該開口部を閉じる蓋部とからなる筐体と、
該筐体の内部に配置された電力用半導体素子とを含み、
該蓋部が、該筐体の外部に該制御系基板を固定する固定手段を有し、
該固定手段が、該制御系基板を該蓋部から間隔を置いて支持するスペーサと、該スペーサを貫通し、該制御系基板を該蓋部に固定するねじ部とを含むことを特徴とする電力用半導体装置。 A power semiconductor device controlled by a control system substrate,
A housing comprising a case having an opening and a lid for closing the opening of the case;
A power semiconductor element disposed inside the housing,
Lid portion, have a fixing means for fixing the control system board to the outside of the housing,
The fixing means includes a spacer that supports the control system substrate at a distance from the lid portion, and a screw portion that passes through the spacer and fixes the control system substrate to the lid portion. Power semiconductor devices. 上記ねじ部が、上記蓋部に固定されたボルトと、該ボルトと噛合うナットからなることを特徴とする請求項１に記載の電力用半導体装置。 The power semiconductor device according to claim 1 , wherein the screw portion includes a bolt fixed to the lid portion and a nut meshing with the bolt. 上記ねじ部が、上記蓋部に固定されたナットと、該ナットと噛合うボルトからなることを特徴とする請求項１に記載の電力用半導体装置。 The power semiconductor device according to claim 1 , wherein the screw portion includes a nut fixed to the lid portion and a bolt meshing with the nut. 上記スペーサが、上記蓋部に固定されたことを特徴とする請求項２または３に記載の電力用半導体装置。 The power semiconductor device according to claim 2 , wherein the spacer is fixed to the lid. 制御系基板で制御される電力用半導体装置であって、A power semiconductor device controlled by a control system substrate,
開口部を有するケース部と、該ケース部の該開口部を閉じる蓋部とからなる筐体と、A housing comprising a case having an opening and a lid for closing the opening of the case;
該筐体の内部に配置された電力用半導体素子とを含み、A power semiconductor element disposed inside the housing,
該蓋部が、該筐体の外部に該制御系基板を固定する固定手段を有し、The lid has a fixing means for fixing the control system board to the outside of the housing;
該固定手段が、該制御系基板を該蓋部から間隔を置いて支持する該蓋部に固定されたスペーサと、該制御系基板を該スペーサに固定するタッピングねじとを含むことを特徴とする電力用半導体装置。The fixing means includes a spacer fixed to the lid for supporting the control system board at a distance from the lid, and a tapping screw for fixing the control system board to the spacer. Power semiconductor device. 制御系基板で制御される電力用半導体装置であって、A power semiconductor device controlled by a control system substrate,
開口部を有するケース部と、該ケース部の該開口部を閉じる蓋部とからなる筐体と、A housing comprising a case having an opening and a lid for closing the opening of the case;
該筐体の内部に配置された電力用半導体素子とを含み、A power semiconductor element disposed inside the housing,
該蓋部が、該筐体の外部に該制御系基板を固定する固定手段を有し、The lid has a fixing means for fixing the control system board to the outside of the housing;
該固定手段が、該制御系基板を該蓋部から間隔を置いて支持するスペーサからなり、該スペーサが、該制御系基板を挿入して固定する切欠き部を有することを特徴とする電力用半導体装置。The fixing means comprises a spacer for supporting the control system board at a distance from the lid, and the spacer has a notch for inserting and fixing the control system board. Semiconductor device. 上記蓋部が、上記固定手段が設けられた第１面と、略平坦な第２面とを有し、該第２面が外になるように該蓋部で上記ケース部の上記開口部を閉じ、上記筐体内に該固定手段を収納したことを特徴とする請求項１〜６のいずれかに記載の電力用半導体装置。 The lid has a first surface provided with the fixing means and a substantially flat second surface, and the opening of the case portion is formed by the lid so that the second surface is outside. The power semiconductor device according to claim 1 , wherein the fixing means is closed and accommodated in the housing.
JP2004039701A 2004-02-17 2004-02-17 Power semiconductor device Expired - Fee Related JP4330464B2 (en)

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