JP4326285B2 - Reaction chamber and processing equipment - Google Patents

Description

  The present invention relates to a reaction chamber, a hot trap, and a processing apparatus.

  The semiconductor manufacturing process generally includes processes such as oxidation to a wafer, formation of a thin film, ion implantation, and etching, and a semiconductor chip having a multilayer structure is formed by repeating this kind of operation. In order to form a thin film on a semiconductor wafer, a CVD apparatus, a sputtering apparatus or the like is generally used. A CVD apparatus places a semiconductor wafer in a reaction chamber of vacuum or atmospheric pressure, supplies one or several kinds of gas containing elements constituting a thin film at a predetermined temperature, and generates reaction products generated by a chemical reaction. It is a device for depositing on the surface.

In CVD equipment, various source gases are used depending on the substances to be deposited, but the following problems occur when exhaust gas (reactant gas) and reaction product gas are exhausted with an exhaust pump (dry pump). Occurs. That is, if exhaust gas consisting of raw material gas, reaction product gas, etc. is flowed to the exhaust pump as it is, reaction by-products (mainly in solid form) will stick to the exhaust pump and cause malfunctions and malfunctions. It causes problems such as contamination. Therefore, it has been proposed to provide an exhaust gas abatement device (trap) in the piping between the reaction chamber of the CVD device and the exhaust pump. Traps are classified into cold traps and hot traps according to the operating temperature. be able to. The cooling trap cools the exhaust gas and deposits and removes components in the exhaust gas. However, since the cooling trap deposits unreacted raw material gas and reaction product gas as they are without decomposition, if the precipitation is insufficient, the exhaust gas will still cause exhaust pump failure and operation failure. Will be included. In addition, since the cooling trap can be applied only to exhaust gas that is liable to be liquefied or solidified, its application range is narrow.

  Therefore, a high temperature trap for thermally decomposing exhaust gas has been proposed (see, for example, Patent Document 1). According to Patent Document 1, since the exhaust gas has a low molecular weight when passing through the high temperature trap, it does not cause trouble or malfunction of the exhaust pump. In general, the cooling trap attempts to remove all components at or above the temperature of the cooling trap in accordance with the vapor pressure characteristics of the exhaust gas. However, if the cooling trap is not kept at a set temperature at all times, it is re-released at a time, polluting the exhaust system more than if there is no cooling trap, and the excessive capacity of expensive exclusion equipment connected outside the exhaust system is exceeded. I need. Further, if regeneration or replacement work is performed at room temperature higher than the temperature of the cooling trap while confined in the cooling trap, an excessive pressure is generated in the cooling trap, resulting in an explosion risk. In the high temperature trap, components that react below the set temperature are thermally decomposed and below the temperature of the high temperature trap, only stable gas components are discharged through the exhaust system set below the temperature of the high temperature trap. There is no need to control the temperature of the exhaust system. Solid components generated by pyrolysis in the high temperature trap are physically adsorbed to the structure of the high temperature trap. The maintenance of the high temperature trap is possible at room temperature lower than that of the high temperature trap, and has an excellent advantage that no harmful gas is generated.

  Thus, if the high temperature trap is arranged between the exhaust system reaction chamber and the exhaust pump, the high temperature trap to the exhaust pump can be detoxified. Conventionally, the reaction chamber and the piping from the reaction chamber to the high temperature trap are used. Could not be removed. As a result, metal (for example, copper) and other residues adhere to the reaction chamber and the piping from the reaction chamber to the high-temperature trap, which makes maintenance difficult. In contrast, a CVD apparatus has been proposed in which a high temperature trap is provided in a reaction chamber to thermally decompose unreacted gas (see, for example, Patent Document 2).

Other conventional techniques related to the CVD apparatus include, for example, Patent Documents 3 and 4.
JP-A-9-296270, paragraph number 0015 JP-A-63-53918, page 4, lines 15 to 17, page 6, lines 11 to 13 JP-A-2-222722 JP-A-3-245526

  In Patent Document 2, a high-temperature trap is disposed below the reaction chamber, and the processing space where the semiconductor wafer, which is the object to be processed, reacts with the reaction gas, and the removal space where the high-temperature trap removes the exhaust gas are the same space. . Patent Document 2 explains that the high-temperature trap “has the ability to thermally decompose most of the unreacted gas, so that the influence of the rising air current can be reduced, and a uniform epitaxial growth layer is formed”.

  However, if the gaseous product generated when the trap reacts with the exhaust gas flows into the processing space, which is usually controlled at a substantially constant pressure, the partial pressure of the reactive gas for processing decreases and the film forming processing speed decreases. . In addition, depending on the reaction gas used, not only the processing speed decreases due to a mere decrease in partial pressure, but the gaseous product may actively inhibit the processing reaction. For example, consider the case where Cu (hfac) TMVS is used as a reaction gas (the same applies to Cu (hfac) ATMS).

Cu (hfac) TMVS → Cu (hfac) (adsorption) + TMVS 1)
2Cu (hfac) (adsorption) → Cu + Cu (hfac) ₂ 2)
Cu (hfac) ₂ + H ₂ → Cu + 2H (hfac) 3)
2H (hfac) → H ₂ + 2hfac Four)
Cu (hfac) (adsorption) + hfac → Cu (hfac) ₂ 5)
In a high-temperature trap at 300 ° C. or higher, three types of gases (ie, TMVS, Cu (hfac) ₂ and H (hfac)) are generated by the reactions 1) to 3). The reversely flowing TMVS suppresses the progress of the reaction 1) for Cu film formation on the wafer W. The backflowed H (hfac) advances the reactions 4) and 5) on the wafer and reduces the Cu film formation due to the reaction 2). Note that the reaction 3) does not proceed on a wafer set at 150 ° C. to 230 ° C. As described above, in the prior art, since a mechanism for preventing back diffusion is not applied to the product generated when pyrolyzing the unreacted gas, the object to be processed is processed when a high temperature trap is arranged in the reaction chamber. There was a problem that the reaction rate for the reduction was reduced.

  Further, in the apparatus disclosed in Patent Document 2, the wafer susceptor on which the object to be processed is placed and the high temperature trap are simultaneously provided by an RF coil provided outside the space in which the processing space and the abatement space are integrated. Induction heating. In such a conventional technique, it has been difficult to realize a temperature of a high temperature trap (for example, 300 ° C. or higher) that is set higher than the temperature of the object to be processed (for example, 150 ° C. to 230 ° C.).

  Further, in the prior art, depending on the moving speed of the exhaust gas, there is a possibility that a large amount of exhaust gas that is not sufficiently decomposed into the exhaust system connected to the reaction chamber in the subsequent stage may move.

Accordingly, the general object of the present invention to provide a novel and useful reaction Shitsu及 beauty treatment apparatus to solve such problems.

  The reaction chamber according to claim 1, wherein the reaction gas is reacted by reacting the reaction gas with a gas introduction part to which a reaction gas is supplied, a support part capable of supporting an object to be processed, a trap support part capable of supporting a high temperature trap. A backflow suppressing device capable of separating a processing space for processing the object to be processed and a trap space in which the high temperature trap is disposed, and preventing a backflow of gas from the trap space to the processing space;

The reaction chamber of claim 2, in a reaction chamber of claim 1, wherein the backflow inhibiting unit is shield ring hollow cylindrical plate shape having a plurality of exhaust holes.
The reaction chamber according to claim 3 is the reaction chamber according to claim 2, wherein the plurality of exhaust holes have a diameter of 0.5 to 1 mm.
A reaction chamber according to a fourth aspect of the present invention further includes a post trap space into which the exhaust gas discharged from the high temperature trap is introduced.

The reaction chamber according to claim 5 is the reaction chamber according to claim 1, wherein the trap support portion is in a reduced pressure environment and is disposed in the trap support portion, and the high temperature trap is heated independently of the object to be processed. further comprising a heater capable, and a power supply device for supplying electric power to the heater while maintaining the reduced pressure environment.

A reaction chamber according to a sixth aspect is the reaction chamber according to the first aspect, wherein the high temperature trap heats the exhaust gas and an introduction portion to which an exhaust gas containing a reaction gas that has passed through the workpiece is supplied. A conductive abatement part that can contact the exhaust gas and a discharge part that discharges the exhaust gas that has passed through the conductive abatement part.
The reaction chamber according to claim 7 is the reaction chamber according to claim 6, wherein the conductive abatement part is energized.
The reaction chamber according to claim 8 is the reaction chamber according to claim 6, wherein the conductive abatement part is mesh-shaped.

The processing apparatus according to claim 9 is the reaction chamber according to any one of claims 1 to 8, a reaction gas supply device that supplies a reaction gas to the gas introduction unit, and the reaction gas that has passed through the high temperature trap. And an exhaust device for exhausting the air.

A processing apparatus according to a tenth aspect is the processing apparatus according to the ninth aspect , wherein the reaction gas supply device includes first and second metal-based pipes that can carry the reaction gas, and the first and second pipes. A connecting device for connecting the two pipes, and an insulator provided on the joint surface of the first and second pipes.

Processing apparatus according to claim 11, wherein, in the processing apparatus according to claim 10, wherein the reaction is connected to a gas supply apparatus, the carrier gas supply device for supplying a carrier gas carrying the reactant gas supplied from the reaction gas supply device And a seal member that is connected to the first and second pipes and prevents the carrier gas from leaking from a joint portion of the first and second pipes.

A processing apparatus according to a twelfth aspect is the processing apparatus according to the eleventh aspect, wherein the joining surfaces of the first and second pipes are an inner portion where the insulator is provided and an outer portion where the insulator is provided The seal member is a metal seal member disposed between the outer portion of the joint surface of the first pipe and the outer portion of the joint surface of the second pipe.

The processing apparatus according to claim 13 is the processing apparatus according to claim 9 , wherein the first and second pipes that can carry the reaction gas, and the connection apparatus that connects the first and second pipes; A sealing member having an insulating surface, which is disposed between a joint surface of the first pipe and a joint surface of the second pipe.

According to the reaction chamber of the first to fourth aspects , the backflow suppression device can prevent the gas generated by the reaction in the high temperature trap from flowing back from the trap space to the processing space.

According to the reaction chamber of the fifth aspect , in addition to the effect of the first aspect, the power supply device can supply electric power to the heater without destroying the reduced pressure environment in the reaction chamber. Further, since the heater can directly heat the high temperature trap independently of the object to be processed, a temperature setting higher than that of the object to be processed can be realized easily and efficiently.

According to the reaction chamber described in claims 6 to 8 , in addition to the effect of claim 1, the conductive abatement part of the high temperature trap decomposes the exhaust gas by thermal decomposition by heating and gas from the conductivity. The rate of decomposition can be improved by promoting the electron transfer between them. Thereby, since the high temperature trap has a high decomposition rate, it is possible to prevent a large amount of exhaust gas that is not sufficiently decomposed into the exhaust system connected to the subsequent stage of the reaction chamber.

According to the processing apparatus of the ninth aspect , it is possible to provide a processing apparatus having a reaction chamber having the same effect as that of the first to eighth aspects .

According to Processing equipment according to claim 10 dependent on claim 9, in addition to the effect of claim 9, the insulation material provided on the joint surface of the metal pipe at the joint surface of the reaction gas piping To prevent the electron from moving through. Thereby, consumption of the reaction gas resulting from the reaction of the reaction gas at the joint surface of the pipe can be prevented, and a desired amount of the reaction gas can be supplied to the reaction chamber.

According to the processing apparatus according to claim 11 or claim 12 dependent on claim 10, in addition to the effect of claim 10, since the seal member can be prevented from concentration of the carrier gas is reduced, the reaction A desired amount of reaction gas can be supplied to the reaction chamber without changing the gas moving speed.

According to the processing apparatus according to claim 13 dependent on claim 9, in addition to the effect of claim 9, the consumption of the reaction gas due to the reaction gas reacts by the surface of the seal member is insulative The desired amount of reaction gas can be supplied to the reaction chamber.

  Hereinafter, an embodiment of a reaction chamber, a high temperature trap, and a processing apparatus according to the present invention will be described with reference to the accompanying drawings. In the drawings, the same reference numerals denote the same members. FIG. 1 is a block diagram of an exemplary film forming apparatus 100 as an embodiment of the processing apparatus of the present invention (excluding an exhaust device). FIG. 2 is a schematic sectional view of an exemplary reaction chamber 200 applicable to the film forming apparatus 100 shown in FIG. FIG. 3 is a partially enlarged sectional view of the reaction chamber 200 shown in FIG.

  Hereinafter, in this embodiment, the case where the film forming apparatus 100 uses Cu (hfac) TMVS as an example of the reaction gas will be described. However, the applicable reaction gas of the present invention is not limited to Cu (hfac) TMVS. Absent. For example, the present invention is applicable to metal (eg, copper) β-diketone complexes. For example, copper β-diketone complexes include Cu (hfac) ATMS, [trimethylvinylylsilyl] hexafluoroacetylacetonate copper, [3-hexyne] hexafluoroacetylacetonate copper, [2-butyne] hexa It contains copper fluoroacetylacetonate, [trimethylphosphine] hexafluoroacetylacetonate copper.

  As shown in FIG. 1, the film forming apparatus 100 includes a storage tank 108, a flow meter 110, a vaporizer 140, and a reaction chamber 200, and is Cu (hfac) TMVS (liquid at normal temperature and normal pressure). A gas obtained by vaporizing a certain organometallic compound) under reduced pressure is used.

The storage tank 108 stores a liquid state Cu (hfac) TMVS (liquid raw material) to which a symbol “L” is attached in FIG. 1. The storage tank 108 is connected to a nozzle 117 having a valve 118 and a nozzle 119 having a valve 120. The lower end of the nozzle 117 is disposed above the Cu (hfac) TMVS liquid surface, and the lower end of the nozzle 119 is disposed in the liquid. A He gas source 104 that supplies helium (He) gas as a pressurizing gas is connected to the base 115 disposed at the upper end of the nozzle 117 via a passage 105. For example, the pressure of the He gas is adjusted to about 0.5 kg / cm ² , and the liquid level of Cu (hfac) TMVS can be pressurized by being introduced into the storage tank 108. The passage 105 is provided with a valve 112 for controlling the supply and discharge of He gas.

  A base 121 disposed at the upper end of the nozzle 119 is connected by a vaporizer 140 (with a liquid inlet 140 </ b> A) passage 123. As shown in FIG. 1, valves 122 and 126 are attached to the passage 123 and are closed during maintenance of the film forming apparatus 100 and other necessary times.

  The flow meter 110 can detect the mass flow rate of Cu (hfac) TMVS supplied from the storage tank 108 to the vaporizer 140. In FIG. 1, the flow meter 110 is provided between the storage tank 108 and the vaporizer 140, but the flow meter 110 may be integrated with the vaporizer 140. Alternatively, the flow meter 110 may be replaced with a flow control device that can act as a flow control valve, and the vaporizer 140 may be replaced with a normal vaporizer that does not have such a function. The structure of the vaporizer 140 applicable to the film forming apparatus 100 of the present embodiment is not limited.

The vaporizer 140 includes a liquid inlet 140A that receives Cu (hfac) TMVS in a liquid state, a vapor outlet 140B that discharges Cu (hfac) TMVS that is normally in a vaporized state, and reduced-pressure vaporization of Cu (hfac) TMVS. And a gas introduction part 140C for receiving a carrier gas introduced for promotion. The vaporizer 140 includes a heating unit that can compensate for the endotherm generated when the flow-controlled Cu (hfac) TMVS is vaporized under reduced pressure. As described above, the liquid introduction part 140 </ b> A is connected to the storage tank 108 through the passage 123. The outlet 140B is connected to a reaction chamber 200 (shower head 210) described later via a passage (pipe) 135 (or selectively directly). The gas introduction part 140 </ b> C is connected to the carrier gas source 102 via the passage 103. In the present embodiment, the carrier gas is illustratively He or H ₂ gas having a temperature of 60 ° C. to 70 ° C. with a pressure controlled to about 0.5 kg / cm ² . The vaporizer 140 may be pressurized by the carrier gas source 102 or may be kept in a reduced pressure state. The passage 103 is provided with a valve 130 used to shut off the carrier gas at the time of maintenance or when necessary.

  The vaporizer 140 includes a flow rate control valve and a steam valve (not shown). The flow control valve is controlled by a controller (not shown) according to the detection result of the flow meter 110. For example, such a controller can control the flow rate control valve so that the mass flow rate of Cu (hfac) TMVS in a liquid state flowing through the valve hole is, for example, 0.1 to 1 ml per second. The steam valve is attached to the valve body so as to be movable up and down, and controls the flow rate of the carrier gas. Therefore, the liquid material flows toward the reaction chamber 200 by the carrier gas having a high flow rate by controlling the positions of the flow rate control valve and the vapor valve.

  The heater 155 heats the pipe 135 under appropriate temperature control so that the liquid material mixed with the carrier gas in the pipe 135 from the vaporizer 140 to the reaction chamber 200 does not become Cu (hfac) TMVS solid. Preferably, Cu (hfac) TMVS in a liquid state is higher than the vaporization temperature in the region until it reaches the reaction chamber 200 after being gasified by the vaporizer 140, but is decomposed up to the reaction chamber 200. Multi-stage temperature control is performed so that the reaction chamber 200 is stably transported at a temperature in a range where no reaction occurs. It should be noted that Cu (hfac) TMVS in a gaseous state reliquefies when the temperature is low, causing a decomposition reaction as described below and depositing a solid product.

2Cu (hfac) TMVS → Cu + Cu (hfac) ₂ + 2TMVS
It should be understood that when the vaporizer and the reaction chamber are directly connected, the distance in which the organometallic compound is transferred is short, so that the temperature within a predetermined range may change.

  The vaporized and temperature-controlled Cu (hfac) TMVS is efficiently transported to the shower head 210 of the reaction chamber 200 in a very short time. The reaction chamber 200 is a part that performs a film forming process on the object to be processed, and is configured as, for example, a CVD apparatus that performs a film forming process on the semiconductor wafer W. If the reaction chamber 200 is configured as a vacuum processing chamber, an evacuation system provided with a vacuum pump is connected thereto, and if configured as an atmospheric pressure processing chamber, a simple exhaust system is connected. The pipe 135 is provided with a valve 134 for isolating the vaporizer 140 at the time of maintenance described later or when discharging residual liquid.

  The inside of each pipe is preferably subjected to surface treatment (for example, having a coating layer) by, for example, fluorination treatment or fluororesin treatment. One purpose of the surface treatment is to prevent the movement of electrons through the inner surface of the pipe by making the inner surface of the pipe insulative. Generally, each pipe is a metal base and is made of a metal such as SUS (stainless steel). Therefore, a resin-based binder can be used to improve the bonding property between the pipe and the fluororesin.

  The conventional piping having no coating layer will be described in more detail. Cu (hfac) TMVS as a reaction gas causes the following reaction 1) when it contacts the pipe metal, and as a result, Cu (hfac) is adsorbed on the inner surface of the metal pipe.

Cu (hfac) TMVS → Cu (hfac) (adsorption) + TMVS 1)
This TMVS adversely affects the film forming process of the semiconductor wafer W, as will be described later. Further, the adsorbed Cu (hfac) generates the following reaction 2), and Cu is deposited in the piping, and in the reaction chamber 200, Cu (hfac) ₂ that is not used for the film forming process of the wafer W is generated. become. The piping is clogged by the deposition of Cu, and the cross-sectional area thereof becomes small. Therefore, it becomes difficult to supply the reaction gas to the reaction chamber 200 with good flow rate control. Further, since the reaction gas is consumed by the pipe, a sufficient amount of the reaction gas necessary for the intended film formation process cannot be supplied to the reaction chamber 200.

2Cu (hfac) (adsorption) → Cu + Cu (hfac) ₂ 2)
Since the decomposition reaction of 2) occurs when electrons move between two adsorbed Cu (hfac), it is preferable to perform a surface treatment for preventing the movement of electrons on the inner surface of the pipe.

Here, a method of coating the inner surface of the pipe with a metal fluoride or a metal oxide can be considered, but it is not preferable because it includes a metal. More specifically, for example, when metal fluoride or metal oxide is used, metal M (for example, Al, Fe, Ti, Cu, etc.) reacts with Cu (hfac) TMVS, and M (hfac) _x (x is 3 for Al, Fe, Ti, 2 for Cu, etc.). It will be understood that this forms M (hfac) ₂ − and etches and destroys the coating layer.

  Therefore, for example, it is preferable to use a resin fluoride (for example, PTFE, PCTFE, etc.). In addition, since fluororesin treatment permeates He, it should be noted that if the joint portion of the pipe is coated with fluororesin as described later, He may be lost as a carrier gas. This is because the movement speed of Cu (hfac) TMVS decreases due to the escape of the carrier gas, and the desired amount of Cu (hfac) TMVS cannot be supplied to the reaction chamber 200. This is because it is not preferable that the He gas flows out to the outside.

  Surface treatment is also important at the joint as indicated by reference numeral 131 in FIG. For example, FIG. 5 shows a clamp sealing method as a typical example in which two pipes 510 and 512 are sealed and joined. In FIG. 5, a pair of flanges 502 are moved together with the clamps 500 by pressurizing the pair of clamps 500 in a direction in contact with each other, and the metal gasket (or O-ring) 504 is crushed for sealing. However, even if the inner surface of each of the pipes 510 and 512 has a surface-treated liner (ie, an insulating coating layer) 520, the metal surfaces of the pipes 510 and 512 (and the flange 502) react at the joint surfaces 530 and 532. When exposed to gas, the above-mentioned problems occur. Further, the same problem occurs on the surface of the metal gasket 504 that has been subjected to surface treatment of aluminum, nickel, or plating.

  Therefore, the inventors have solved this problem by forming a liner 522 at the joint as shown schematically in FIG. 6 and using a sealing material 505 made of fluorine rubber instead of the metal gasket 504. I found that I can do it. A commercially available material such as DuPont Viton O-ring or Kalrez can be used as the sealing material 505 made of fluorine-based rubber. It will be understood that the (fluorinated rubber) sealing material 505 can be successfully collapsed to achieve a seal if its size is increased. Furthermore, as schematically shown in FIG. 7, a metal seal material 540 for preventing He leakage from the joint may be selectively provided. In addition, according to FIG. 7, the joint surface 530 of the pipe 510 and the joint surface 532 of the pipe 512 are positioned around the inner part covered with the liner 522 and the inner part thereof, and are covered with the liner 552. Has no outer part. The bonding surface 530 has an inner surface 550 covered by the liner 522 and an uncovered outer surface 570, and the bonding surface 532 has an inner surface 552 covered by the 522 and an uncovered outer surface. Surface 572. The inner sealing material 505 made of fluorine-based rubber is disposed between the joint surface 530 and the liner 522 that covers the joint surface 532, that is, between the surface 550 and the surface 552. Further, the metal outer sealing material 540 is disposed between the surface 570 and the surface 572. Therefore, when the clamp 500 is operated and the joint surface 530 and the joint surface 532 are brought close to each other, the inner seal member 505 and the outer seal member 540 sandwiched between the joint surface 530 and the joint surface 532 are crushed, and the pipe 510 and the pipe 512 is sealed. If a combination of a resin seal and a metal seal as shown in FIG. 7 is applied to the NW joint, it will be as shown in FIG. 8, and if applied to a VCR joint, it will be as shown in FIG. In FIGS. 8 and 9, the metal seal materials 540a and 540b and the inner seal materials 505a and 505b made of fluorine-based rubber are sealed in cooperation. At this time, in FIG. 8 and FIG. 9, reference numerals indicate members having functions similar to those corresponding to the reference numerals without alphabets, and thus will not be described in detail here. 8, the metal sealing material 540a has a structure that is sandwiched between a portion not covered with the liner 522a, that is, the surface 570a and the surface 572a. Therefore, the sealing material 540a is directly sandwiched between the metal surfaces of the pipe 510a and the pipe 512a for sealing. Note that FIG. 9 shows that the sealing material 540b is pressurized and sealed by the protrusions provided on the pipe 510b and the pipe 512b. Further, it will be understood that the liner 520b is not limited to fluororesins.

  Hereinafter, a specific configuration example of the reaction chamber 200 shown in FIG. 1 will be described with reference to FIGS. 4 is a plan view for explaining the relationship among the semiconductor wafer W, the susceptor 240, and the shield ring 250 in FIG. In FIGS. 2 and 3, arrows indicate gas (that is, reaction gas and exhaust gas) flow paths. The reaction chamber 200 has a shower head 210 and a housing 220.

  The shower head 210 is connected to the pipe 135 so that the reaction gas (that is, Cu (hfac) TMVS) is supplied from the pipe 135 and the supply section that supplies the reaction gas to the processing space S1 with a predetermined uniform density. 214 and an upper portion 216 to which the chamber heater 234 is attached. The shower head 210 is heated by the chamber heater 234 to such an extent that the gaseous state of the reaction gas is maintained.

  The housing 220 includes a head attachment portion 221 to which the shower head 210 is attached, a valve attachment portion 222 to which a pressure adjustment valve (conductance valve) 290 described later is attached, a lower portion 223 to which a feedthrough 280 described later is attached, a chamber heater 230, and It has side portions 224 and an upper portion 225 to which 232 is attached, and a ring support portion 226 that supports an end portion of a shield ring 250 described later. Although the ring support portion 226 is configured as a step having a substantially L-shaped cross section, it goes without saying that the support method is not limited. For example, a part of the shield ring 250 can be cut out.

  As the chamber heaters 230 to 234, any heater known in the art including a resistance heating type heater and a radiation heating type heater can be applied. For example, Sakaguchi E.I. H. VOC's silicon rubber heater SSH-16 or sheath heater can be used. Moreover, a far-infrared ceramic heater can be utilized as a radiation heating type heater.

  The interior of the reaction chamber 200 is divided into a processing space S1 and an exhaust space S2 by a shield ring 250 described later. The processing space S <b> 1 is a space for processing the semiconductor wafer W mainly by reacting the reaction gas introduced from the shower head 210. The exhaust space S2 is mainly a space where the reaction gas that has passed through the semiconductor wafer W in a reacted or unreacted state is exhausted. The exhaust space S2 includes a trap space S3 in which a later-described high temperature trap 260 for removing exhaust gas is disposed and a post trap space S4 in which the exhaust gas discharged from the high temperature trap 260 is introduced. As described below, the processing space S1 and the exhaust space S2 have different environments such as pressure and temperature. In the exhaust space S2, the environment of the trap space S3 and the post trap space S4 is the same, but may be different.

  The processing space S1 is defined by the supply unit 214 of the shower head 210, the upper portion 225 of the housing 220, the susceptor 240 that supports the wafer W and heats the wafer substrate to about 170 ° C., and the shield ring 250. The susceptor 240 has a wafer support portion 242 that supports the wafer W and a ring support portion 244 having an L-shaped cross section that supports the end portion of the shield ring 250. Since the conventional susceptor 240 can be used as it is except for having the ring support portion 244, detailed description of the structure and function is omitted here. Although the susceptor 240 supports the shield ring 250 in the ring support portion 244, it goes without saying that the support method is not limited. For example, a part of the shield ring 250 can be cut out.

As shown in FIGS. 2 and 4, the shield ring 250 has a thin hollow cylindrical plate shape having a plurality of exhaust holes 252. The shield ring 250 functions as a differential pressure plate (baffle plate) that separates the processing space S1 and the exhaust space S2 and takes a differential pressure between the processing space S1 and the exhaust space S2. Conventionally, the reaction chamber 200 is provided with a rectifying plate having a shape similar to the shield ring 250. However, the diameter of the hole in which the rectifying plate is provided is about 2 to 3 mm. In two spaces where pressures of 500 Torr (66.7 × 10 ³ Pa) and 400 Torr (53.3 × 10 ³ Pa) are close to each other, a differential pressure function (in this case, 400 Torr / 500 Torr = 4/5) However, when applied to the present embodiment, the gas heated in the trap space S3 flows back into the processing space S1 and diffuses. In the present embodiment, for example, if the pressure in the processing space S1 is 500 Torr (66.7 × 10 ³ Pa), the pressure in the processing space S2 is about 50 Torr (6.67 × 10 ³ Pa). 1/10) is required.

  As described above, the reaction chamber 200 according to the present embodiment is characterized in that the pressure P1 in the processing space S1 is significantly larger than the pressure P2 in the exhaust space S2 (for example, about 10 times) and the processing is performed from the exhaust space S2. Backflow to the space S1 is prevented.

  When a gaseous product generated when a high-temperature trap 260 (described later) reacts with exhaust gas flows into the processing space S1 that is normally controlled at a substantially constant pressure, the partial pressure of the reactive gas decreases, and the film forming processing speed decreases. In this example, TMVS and H (hfac) may inhibit the treatment reaction. More specifically, it is as follows.

Cu (hfac) TMVS → Cu (hfac) (adsorption) + TMVS 1)
2Cu (hfac) (adsorption) → Cu + Cu (hfac) ₂ 2)
Cu (hfac) ₂ + H ₂ → Cu + 2H (hfac) 3)
2H (hfac) → H ₂ + 2hfac Four)
Cu (hfac) (adsorption) + hfac → Cu (hfac) ₂ 5)
In the processing space S1, in order to deposit Cu (zero valence) on the wafer W, it is expected that the reactions 1) and 2) occur. Therefore, when Cu (hfac) TMVS (containing monovalent copper atoms) which is a reactive gas is introduced into the processing space S1, unreacted Cu (hfac) TMVS and Cu (hfac) are included in the exhaust gas. ₂ and TMVS. Of these, Cu (hfac) ₂ (containing a divalent copper atom) is solid at room temperature, the vapor pressure is 9 Torr (100 ° C.), and decomposes as shown in 3) and 4) at a temperature of 300 ° C. or higher. To do. On the other hand, TMVS is liquid at room temperature and has a boiling point of 55 ° C. (1 atm).

For example, as will be described later, when the temperature of the high temperature trap 260 is set to 300 ° C. or higher, the three types of gases (that is, TMVS, Cu (hfac) _2, and H) are generated from the high temperature trap 260 by the reactions 1) to 3). (Hfac)) is generated. If these gases flow back into the space S1, TMVS is a stabilizer for the reaction gas, but if it is too much, it causes the reverse reaction of 1) on the wafer W and suppresses the progress of the reaction of 1). Therefore, the wafer processing can be efficiently performed with less TMVS. H (hfac) advances the reactions 4) and 5) on the wafer W, and reduces Cu film formation due to the reaction 2). As described above, the reaction 3) does not proceed on a wafer set at 150 ° C. to 230 ° C.

  Therefore, in order to ensure the reaction of 1) and 2) and deposit an appropriate amount of Cu on the wafer W, it is necessary to prevent the backflow of gas from the exhaust space S2 to the processing space S1. Therefore, in this embodiment, the shield ring 250 can take the differential pressure (conductance) between the spaces S1 and S2 by a simple method by setting the diameter of the exhaust hole 252 to about 0.5 to 1 mm. . The material of the shield ring 250 can be made of a ceramic such as stainless steel (SUS), aluminum, or alumina. In addition, although the magnitude | size, shape, etc. of the exhaust hole 252 are changed by the magnitude | size of the required differential pressure, you may comprise so that the magnitude | size of the exhaust hole 252 can be varied instead.

  On the other hand, the shield ring 250 separates the temperature of the trap space S3 and the temperature of the processing space S1. The temperature of the wafer W arranged in the processing space S1 is heated to about 150 ° C. to 230 ° C., and the high temperature trap 260 described later is heated to about 300 ° C. to 350 ° C. This will be further described together with the high temperature trap 260.

  Although the shield ring 250 has a function as a differential pressure plate in this embodiment, the differential pressure function is not necessarily required because maintaining the differential pressure is only one means for preventing the backflow of gas. That is, in an alternative embodiment, the processing space S1 and the exhaust space S2 can be maintained at the same pressure. Even if there is no differential pressure function, the shield ring 250 has a function of preventing the backflow of gas if the spaces S1 and S2 are separated. In this case, the gas flow path is secured by the pressure adjusting valve 290 and the exhaust device 400 described later.

Next, the high temperature trap 260 will be described with reference to FIG. The high temperature trap 260 is supported in contact with the block heater 270 and disposed in the trap space S3 of the reaction chamber 200. More specifically, the high temperature trap 260 includes a shield ring 250.
The gas introduction part 262 that receives the exhaust gas from the exhaust hole 252 of the gas, the conductive abatement part 264 that removes the gas, the discharge part 266 that discharges the gas after the removal to the post trap space S4, and the heater block 270 And a connecting portion 267.

The conductive abatement part 264 is made of aluminum, for example, and has a substantially U-shaped cross section as shown in FIG. It will also be appreciated that the hot trap 260 has a cylindrical shape because it is disposed under the shield ring 250 shown in FIG. The conductive abatement part 264 is heated to about 300 ° C. to 350 ° C. by the heater block 270. The reason why the lower limit temperature is set to about 300 ° C. is to thermally decompose Cu (hfac) ₂ as described above. The upper limit temperature is set to about 350 ° C. because the durable temperature of aluminum is 400 ° C. or less. However, it goes without saying that the upper limit temperature can be changed if a material other than aluminum is used for the high temperature trap 260. It goes without saying that the lower limit temperature can be changed by changing the type of the reaction gas.

  In this embodiment, a highly conductive material (for example, aluminum) on the surface is used for the conductive abatement part 264 that contacts the exhaust gas. For this reason, the high temperature trap 260 has an effect of promoting a decomposition reaction by electron transfer between gases in addition to thermal decomposition by heating. Optionally, the hot trap 260 may be energized to further facilitate such electron transfer, if desired, under predetermined control. Further, the conductive abatement part 264 may be configured in a mesh shape. As described above, the high temperature trap 260 of this embodiment has a higher gas decomposition reaction rate than the conventional high temperature trap that decomposes the gas only from heating, so that the undecomposed gas is sent to the exhaust device 400 described later. Can be prevented.

  Further, the high temperature trap 260 of the present embodiment can be directly heated by the heater block 270 provided in the reaction chamber 200 efficiently and with good temperature control. Further, since the processing space S1 and the trap space S3 are separated by the shield ring 250, the high temperature trap 260 can be easily controlled to the above temperature. In this embodiment, the temperature environment of the processing space S1 and the trap space S3 is separated by the shield ring 250 and the high temperature trap 260 is directly heated by the heater block 270, so that the temperature of the wafer W is about 150 ° C. to 230 ° C. The temperature of the high temperature trap 260 can be heated to about 300 ° C. to 350 ° C. with good temperature control.

  The heater block 270 includes a trap support portion 272 and a heater 274 having a substantially L-shaped cross section, and the heater 274 is connected to the feedthrough 280. The main body of the heater block 270 including the trap support portion 272 is made of, for example, SUS. In FIG. 3, the heater 274 is exemplarily disposed inside the heater block 270, but the position thereof is not limited. For example, the heater 274 is configured as a heater wire wound around the trap support portion 272 or trap support. It may be configured as a heater plate screwed to the outer surface of the portion 272. The heater 274 may employ any structure known in the art, similar to the chamber heater 230, and may be integrated with the heater block 270, or may be configured separately from the heater block 270 as a cartridge heater. Good.

The feedthrough (vacuum current introduction terminal) 280 is attached to the lower part 223 of the housing 220 by an O-ring 281. It goes without saying that another mounting member such as a metal gasket may be used instead of the O-ring 281 . The feedthrough 280 includes an electric wire 282 connected to the heater 274, a ceramic member 283 that protects the electric wire 282, an arbitrary metal material 284, and a connection portion 286 that connects the external heater controller 300 and the electric wire 282. ing. The feedthrough 280 can supply electric power to the heater 274 disposed in the reaction chamber 200 without destroying the reduced pressure environment in the reaction chamber 200. In this embodiment, the feedthrough 280 and the heater controller 300 are configured as separate members, but they may be configured integrally.

By controlling the power supplied to the heater 274 by the heater controller 300, the temperature of the heater 274 (and consequently the heater block 270 and the high temperature trap 260) can be controlled. The heater controller 300 may receive and control the temperature of the heater block 270 and the high temperature trap 260 as feedback information. The temperature information can be generated by a temperature sensor known in the art such as a thermocouple (not shown), a PTC thermistor, or an infrared sensor attached to the heater block 270 or the high temperature trap 260, for example. Since the heater controller 300 can use a structure well known in the art, a detailed description thereof is omitted here.

  A pressure adjustment valve 290 is attached to the valve attachment portion of the housing 220 of the reaction chamber 200. The pressure regulating valve 290 is well known in the art under a name such as a conductance valve. The pressure adjustment valve 290 is connected to an exhaust device 400 that is an external exhaust system. The exhaust device 400 includes piping and a dry pump, but may include a turbo pump and the like together with the dry pump. The pressure adjustment valve 290 can be adjusted in its opening, and the pressure in the reaction chamber 200 can be adjusted by adjusting the opening of the pressure adjustment valve 290 when the exhaust device 400 exhausts the reaction chamber 200. Can be adjusted. The pressure adjustment valve 290 is connected to a pressure controller 204 connected to a pressure gauge 202 that measures the pressure in the reaction chamber 200. The pressure controller 204 adjusts the opening of the pressure adjustment valve 290 according to the measurement of the pressure gauge, whereby the pressure in the reaction chamber 200 is controlled to a substantially constant pressure (predetermined process pressure).

  In addition, the film forming apparatus 100 has an exhaust system for removing liquids and other residues accumulated in the pipes when the apparatus is not used and maintained. The exhaust system includes valves 124, 128, 132, 136, a discharge passage (pipe) 133, a cooling or high temperature trap 150, and a vacuum pump 152. Note that the exhaust system such as the exhaust device 400 connected to the reaction chamber 200 is not shown in FIG. Since these detailed structures are well known in the art, a detailed description is omitted here.

  The discharge passage 133 has valves 132, 128, and a pipe 135 between the vaporizer 140 and the valve 134, a pipe 123 between the flow meter 110 and the vaporizer 140, and a pipe 123 between the valves 122 and 126, respectively. 124 is connected. Further, a valve 136, a trap 150 for removing liquid in the exhaust, and a vacuum pump 152 are provided on the discharge side of the discharge passage 133.

  In consideration of the case where residues and the like cannot be sufficiently removed only by the suction and discharge from the discharge passage 133, the film forming apparatus 100 of this embodiment connects the pipe 107 and the cleaning liquid source 106 to the pipe 123. As the cleaning liquid, an alcohol such as ethanol or methanol, an organic solvent such as hexane, or a component contained in a raw material (for example, TMVS) can be used. The pipe 107 has valves 114 and 116 for supplying and discharging the cleaning liquid.

  Of the passages, the pipes 135 and 133 exiting from the vaporizer 140 and their connection passages are provided with a heater 155 made of, for example, a tape heater or the like for constantly heating and preventing reliquefaction of the vaporized gas. In order to prevent reliquefaction, the pipes 135 and 133 and the connection passage are desired to have a large diameter and a short passage in order to obtain a state close to the pressure of the reaction chamber 200.

  For the film forming apparatus 100, any pipe known in the art can be used. For example, a so-called 40 mm stainless steel pipe having an inner diameter of 39 mm and an outer diameter of 41 mm, and a NW40 pipe joint or gasket can be used. Alternatively, ICF70 pipe joints, ISO flange joints and gaskets may be used.

  The pipe length can be connected from the vaporizer 140 to the reaction chamber 200 by 200 mm to 500 mm when using a commercially available valve or joint.

  Next, the operation of the film forming apparatus 100 will be described. It should be noted that residues in the piping and the like are removed in advance to prevent them from being sent to the reaction chamber 200. Next, the semiconductor wafer W is set on the susceptor 164 of the reaction chamber 200, and the wafer W is maintained at a predetermined process temperature (for example, 150 to 230 ° C.) and at a predetermined process pressure (for example, 0.1 to several). The evacuation system is driven so as to maintain Torr (13.3 Pa to several hundred Pa.) In this state, the film forming process is performed.

  Valves 132 and 136 are opened to connect vaporizer 140 to passage 133. Immediately thereafter, the valves 112, 118, 120, 122, 126, and 130 are opened. Since the passage 133 is constantly evacuated by the vacuum pump 152, the residue in the vaporizer 140 is removed through the passage 133. The fluid control valve 142 of the vaporizer 140 is also opened. After a predetermined time (several seconds), the valves 132 and 136 are closed and the valve 134 is opened.

Thereby, the liquid material L in the storage tank 108 is pushed out by the pressurized He gas and flows through the pipe 123 little by little, and this flow rate is controlled by the flow meter 110 and the flow rate control valve 142. When the liquid material L is introduced into the decompressed space in the vaporizer 140, the liquid material L changes from liquid to gas while adiabatically expanding. At this time, since the temperature of the vaporized organometallic compound is reduced, a decompression space is formed in the vaporizer 140, and the decompression is performed in order to improve the heat exchange efficiency between the inner wall controlled to a predetermined temperature and the vaporized organometallic compound. He or H ₂ gas having good thermal conductivity is introduced from the passage 103 below.

Further, the He or H ₂ gas used here has a function of preventing the vaporized organometallic compound from being reliquefied. That is, He or H ₂ gas is disposed between the vaporized organometallic compounds, and the probability that the organometallic compounds collide directly is reduced, re-deposition is prevented, and re-liquefaction is prevented. Thus, He or H ₂ has a function as a carrier gas for transporting without replenishing the temperature lowered by the vaporization of the organometallic compound and re-liquefying. The carrier gas and the vaporized organometallic compound are introduced as they are into the reaction chamber 200 through the passage 135 and film formation is performed for a time T. At this time, the pressure of the vaporizer of the vaporizer 140 (that is, as described above, the internal space of the vaporizer 140 including the first heating unit 147 in which the organometallic compound is vaporized by being mixed with the carrier gas) is The pressure is preferably set to be close to 1.5 times to 5 times the pressure of the reaction chamber 200.

  As described above, in this embodiment, since the residue of each part of the film forming apparatus 100 can be eliminated before the film forming process, the film forming gas supply amount can be supplied stably and accurately. Therefore, it is possible to obtain a film having good quality and characteristics. Needless to say, it is sufficient to remove the residue after the previous film formation process and before the current film formation process.

In this embodiment, the reaction chamber 200 includes an introduction part 212 to which Cu (hfac) TMVS is supplied, a susceptor 240 capable of supporting the semiconductor wafer W, a heater block 270 capable of supporting the high temperature trap 260, the semiconductor wafer W, A shield ring 250 that separates the processing space S1 in which Cu (hfac) TMVS reacts and the trap space S3 in which the high-temperature trap 260 is disposed, and can prevent backflow of gas from the trap space S3 to the processing space S1. And have. Since such a configuration is adopted, the gas (TMVS, Cu (hfac) ₂ and H (hfac)) generated by the reaction of the shield ring 250 in the high temperature trap 260 is prevented from flowing back from the trap space S3 to the processing space S1. To do. For this reason, the partial pressure of Cu (hfac) TMVS, which is the reaction gas, is maintained in the processing space S1 controlled to a substantially constant pressure. Further, the reverse reaction of the film formation reaction can be prevented by TMVS and H (hfac). As a result, the desired film formation reaction rate of the semiconductor wafer W can be maintained in the processing space S1 of the reaction chamber 200.

  Further, in this embodiment, the reaction chamber 200 includes the introduction block 212 to which Cu (hfac) TMVS is supplied, the susceptor 240 that can support the semiconductor wafer W, and the heater block 270 that can support the high temperature trap 260 and is in a reduced pressure environment. And a heater 274 that is arranged in the heater block 270 and can heat the high temperature trap 260 independently of the semiconductor wafer W, and a feedthrough 280 that supplies power to the heater 274 while maintaining the reduced pressure environment. Since such a configuration is adopted, the feedthrough 280 can supply power to the heater 274 without destroying the reduced pressure environment in the reaction chamber 200. Further, since the heater 274 can directly heat the high temperature trap 260 independently of the semiconductor wafer W, a temperature setting higher than that of the semiconductor wafer W can be realized easily and efficiently.

  Further, in this embodiment, the high temperature trap 260 is connected to the reactive gas supply device (reference number 135 and all or a part of the upper portion thereof) and can support the semiconductor wafer W, and Cu (hfac) TMVS is supported. An introduction unit 262 that can be disposed in a reaction chamber 200 that can perform a film forming process on the semiconductor wafer W and is supplied with exhaust gas containing Cu (hfac) TMVS that has passed through the semiconductor wafer W; In order to heat and exhaust the exhaust gas, a conductive abatement part 264 that can contact the exhaust gas and a discharge part 266 that exhausts the exhaust gas that has passed through the conductive abatement part 264 are provided. Since such a configuration is adopted, the conductive abatement part 264 can decompose the exhaust gas by thermal decomposition by heating, and promote the electron transfer between the gases from the conductivity, thereby improving the decomposition rate. Thereby, since the high temperature trap 260 has a high decomposition speed, it is possible to prevent a large amount of exhaust gas that is not sufficiently decomposed by the exhaust device 400 from moving.

  In this embodiment, the processing apparatus 100 includes a reaction chamber 200 in which a high temperature trap 260 is disposed, and a reaction gas supply apparatus (reference number 135 and its reference number 135) connected to the reaction chamber 200 and supplying Cu (hfac) TMVS to the introduction section 212. All or part of the upper part) and an exhaust device 400 connected to the reaction chamber 200 and exhausting Cu (hfac) TMVS that has passed through the high temperature trap 260.

  In the present embodiment, the processing apparatus 100 includes metal-based first and second pipes 510 and 512 that can carry Cu (hfac) TMVS (and those having reference numerals with alphabets). The clamp 500 (and any or all of the flange 502 and the metal gasket 504) connecting the first and second pipes 510 and 512, and the joint surfaces 530 and 532 of the first and second pipes 510 and 512, respectively. And liners 520 and 522 (and their reference numerals with alphabets). Since such a configuration is adopted, the liners 520 and 522 provided on the joint surfaces 530 and 532 of the pipes 510 and 512 are made of the reaction gas Cu (hfac) TMVS between the pipes 510 and 512 at the joint surfaces 530 and 532. Preventing electron transfer through the metal. This prevents the consumption of Cu (hfac) TMVS due to the reaction of Cu (hfac) TMVS at the joint surfaces 530 and 532 of the pipes 510 and 512, and the desired amount of Cu (hfac) TMVS is removed from the reaction chamber 200. Can be supplied to. Further, it is possible to prevent generation of a gas (for example, TMVS) that hinders the film formation reaction on the bonding surfaces 530 and 532.

  In this embodiment, the processing apparatus 100 is connected to the reaction gas supply apparatus (reference number 135 and all or a part of the upper part thereof), and receives Cu (hfac) TMVS supplied from the reaction gas supply apparatus. It is connected to a carrier gas supply device (He gas source 102 or 104) for supplying He gas to be carried, and the first and second pipes 510 and 512 (specifically, the joint surface 530 of the first pipe 510) Carrier gas from between the joint surface 530 of the first pipe 510 and the joint surface 532 of the second pipe 512) between the outer part and the outer part of the joint surface 532 of the second pipe 512. And a metal sealing material 540 for preventing certain He gas from leaking. Since such a configuration is adopted, even if the liners 520 and 522 are made of a material that transmits He such as fluororesin, the metal seal material 540 prevents the concentration of He gas that is a carrier gas from decreasing. . As a result, a desired amount of Cu (hfac) TMVS can be supplied to the reaction chamber 200 without changing the moving speed of the Cu (hfac) TMVS.

    Further, in this embodiment, the processing apparatus 100 includes first and second pipes 510 and 512 (and those having reference numerals appended with alphabets) capable of carrying Cu (hfac) TMVS, Between the clamp 500 (and any or all of the flange 502 and the sealing material 505) connecting the second pipes 510 and 512, and the joint surface 530 of the first pipe 510 and the joint surface 532 of the second pipe 512 And a sealing material 505 (which is an insulator and has an insulating surface) made of fluorine-based rubber. Since such a configuration is adopted, Cu (hfac) TMVS is prevented from moving through the sealing member due to the insulating surface of the sealing material 505, so that the Cu is not formed on the surface of the sealing material 505. The consumption of Cu (hfac) TMVS due to the reaction of (hfac) TMVS can be prevented, and a desired amount of Cu (hfac) TMVS can be supplied to the reaction chamber 200.

  In the above embodiments, the semiconductor wafer has been described as an example. However, the object to be processed is not limited to a semiconductor wafer such as silicon and gallium arsenide, and other materials such as an LCD substrate and a glass substrate can also be used. Of course, the processing method in the reaction chamber can be applied to both single wafer processing and batch processing.

1 is a block diagram of a film forming apparatus as one embodiment of the present invention. It is a schematic sectional drawing of the exemplary reaction chamber applicable to the film-forming apparatus shown in FIG. FIG. 3 is a partially enlarged cross-sectional view of the reaction chamber shown in FIG. 2. FIG. 4 is a schematic plan view showing a relationship between a shield ring applicable to the reaction chamber shown in FIGS. 2 and 3, a semiconductor wafer, and a susceptor. It is a schematic fragmentary sectional view which shows the conventional joining method of piping applicable to the film-forming apparatus shown in FIG. FIG. 6 is a schematic partial cross-sectional view showing a more preferable joining method than FIG. 5 of piping applicable to the film forming apparatus shown in FIG. 1. It is a schematic fragmentary sectional view which shows the modification of piping joining shown in FIG. It is a general | schematic fragmentary sectional view of the NW joint using the piping joining method shown in FIG. FIG. 7 is a schematic partial sectional view of a VCR joint using the pipe joining method shown in FIG. 6.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Film-forming apparatus 135 Piping 140 Vaporizer 200 Reaction chamber 210 Shower head 220 Housing 230 Chamber heater 240 Susceptor 250 Shield ring 260 High temperature trap 270 Heater block 280 Feed-through 290 Pressure adjustment valve 300 Heater controller 400 Exhaust device

Claims (13)

A gas introduction part to which a reaction gas is supplied;
A support capable of supporting the object to be processed;
A trap support that can support a high temperature trap;
It is possible to separate a processing space for reacting the reaction gas to process the object to be processed and a trap space in which the high temperature trap is disposed, and to prevent a backflow of gas from the trap space to the processing space. A reaction chamber having a backflow suppression device.   The reaction chamber according to claim 1, wherein the backflow suppressing device is a hollow cylindrical plate-shaped shield ring having a plurality of exhaust holes.   The reaction chamber according to claim 2, wherein the plurality of exhaust holes have a diameter of 0.5 to 1 mm.   The reaction chamber according to claim 1, further comprising a post trap space into which exhaust gas discharged from the high temperature trap is introduced. The trap support is in a reduced pressure environment ;
A heater disposed on the trap support and capable of heating the high temperature trap independently of the object to be processed;
The reaction chamber according to claim 1 , further comprising a power supply device that supplies power to the heater while maintaining the reduced pressure environment. The hot trap is
An introduction unit to which exhaust gas containing reaction gas that has passed through the object to be processed is supplied;
A conductive abatement part capable of contacting the exhaust gas to heat and exhaust the exhaust gas;
The reaction chamber according to claim 1 , further comprising a discharge unit that discharges the exhaust gas that has passed through the conductive abatement unit. The reaction chamber according to claim 6 , wherein the conductive abatement part is energized. The reaction chamber according to claim 6 , wherein the conductive abatement part has a mesh shape. The reaction chamber according to any one of claims 1 to 8 ,
A reaction gas supply device for supplying a reaction gas to the gas introduction unit;
A processing apparatus comprising: an exhaust device that exhausts the reaction gas that has passed through the high temperature trap. The reactive gas supply device includes:
Metal-based first and second pipes capable of carrying the reaction gas;
A connection device for connecting the first and second pipes;
The processing apparatus according to claim 9, further comprising an insulator provided on a joint surface of each of the first and second pipes. The processor is
A carrier gas supply device connected to the reaction gas supply device to supply a carrier gas carrying the reaction gas supplied from the reaction gas supply device;
The processing apparatus according to claim 10 , further comprising a seal member connected to the first and second pipes to prevent the carrier gas from leaking from a joint portion of the first and second pipes. Each joint surface of the first and second pipes is
An inner part provided with the insulator;
An outer portion located around the inner portion and being a metal surface;
The process according to claim 11 , wherein the seal member is a metal seal member disposed between the outer portion of the joint surface of the first pipe and the outer portion of the joint surface of the second pipe. apparatus. First and second pipes capable of carrying the reaction gas;
A connection device for connecting the first and second pipes;
The processing apparatus according to claim 9 , further comprising: a sealing member having an insulating surface disposed between a joint surface of the first pipe and a joint surface of the second pipe.

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