JP4317120B2 - Metal film production apparatus and metal film production method - Google Patents

Description

  The present invention relates to a metal film production apparatus and a metal film production method for producing a metal film on a surface of a substrate by a vapor deposition method.

  Conventionally, when producing a metal film, for example, a copper thin film by vapor deposition, a liquid organometallic complex such as copper, hexafluoroacetylacetonate, and trimethylvinylsilane is used as a raw material. The film is formed on the substrate by vaporizing using a simple reaction.

  In recent years, a new CVD method called a chlorinated metal reduction method has been developed, in which a chloride (precursor) is generated from a metal target material such as copper by chlorine radicals, and the generated chloride is reduced to form a film. Therefore, application to metal films has been studied (see Patent Document 1).

JP 2003-226773 A

  With the mass production and higher density of electronic devices to which metal films such as copper films are applied, the substrate on which the copper film is formed becomes larger and the conditions required for the formed copper film, etc. For example, it is desired to further improve the condition of film thickness uniformity.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a metal film manufacturing apparatus and a metal film manufacturing method that are excellent in uniformity of film thickness to be formed.

A metal film manufacturing apparatus according to the first invention for solving the above-mentioned problems is as follows.
A chamber;
A support provided at the bottom of the chamber and having a flow path formed therein;
A suction stand fixed on the support base, on which the substrate is sucked;
Refrigerant supply means connected to the flow path of the support base and supplying a refrigerant controlled to a predetermined temperature to the flow path;
A metal member provided above the chamber and facing the substrate;
A source gas supply means for supplying a source gas containing halogen in the vicinity of the metal member;
Plasma of the source gas supplied into the chamber is generated to generate the radicals of the halogen, and the metal member is etched to form a precursor composed of the metal component contained in the metal member and the halogen. Plasma generating means for generating,
The flow path of the support base is a plurality of first flow paths provided at the peripheral edge of the support base, one second flow path provided at the center of the support base, and a radial shape parallel to the upper surface of the support base. A plurality of third channels that communicate with the plurality of first channels and the one second channel,
The refrigerant supplied from the refrigerant supply means is circulated from the plurality of first flow paths to the one second flow path through the plurality of third flow paths.

A metal film manufacturing apparatus according to a second invention for solving the above-mentioned problems is as follows.
A chamber;
A support provided at the bottom of the chamber and having a flow path formed therein;
A suction stand fixed on the support base, on which the substrate is sucked;
Refrigerant supply means connected to the flow path of the support base and supplying a refrigerant controlled to a predetermined temperature to the flow path;
A metal member provided above the chamber and facing the substrate;
A source gas supply means for supplying a source gas containing halogen in the vicinity of the metal member;
Plasma of the source gas supplied into the chamber is generated to generate the radicals of the halogen, and the metal member is etched to form a precursor composed of the metal component contained in the metal member and the halogen. Plasma generating means for generating,
The flow path of the support base includes one or a plurality of first flow paths provided at a peripheral portion of the support base, one second flow path provided at the center of the support base, and an upper surface of the support base. One or more third flow paths that are formed in a spiral shape in parallel and communicate with the one or more first flow paths and the one second flow path;
The refrigerant supplied from the refrigerant supply means is circulated from the one or more first flow paths to the one second flow path through the one or more third flow paths. To do.

A metal film manufacturing method according to a third invention for solving the above-described problems is as follows.
Place the substrate in the chamber,
In the vicinity of the metal member disposed in the chamber, a source gas containing halogen is supplied, and plasma of the source gas is generated to generate radicals of the halogen,
Etching the metal member with the halogen radicals to produce a precursor comprising the metal component and the halogen contained in the metal member;
The substrate is controlled to a temperature lower than that of the metal member, and the refrigerant flowing through the inside of the support table to which the adsorption table for adsorbing the substrate is fixed is passed from the outer peripheral side of the support table in the vicinity of the upper surface of the support table. The temperature distribution in the surface of the substrate is made low at the peripheral part and high at the central part by circulating to the center of the support base ,
The precursor is adsorbed on the substrate, and the adsorbed precursor is reduced with a radical of the halogen to produce a metal film.

According to the first to third inventions, the substrate temperature at the central portion is increased, the reduction action at the central portion of the substrate is weakened, the progress of film formation is suppressed, and conversely, the substrate temperature at the peripheral portion is decreased. In addition, since the reduction action at the peripheral portion is strengthened and the progress of film formation at the peripheral portion is promoted, the film thickness at the central portion of the substrate where the conventional film thickness is large is reduced, and the substrate where the conventional film thickness is thin The film thickness at the peripheral edge can be increased to improve the film formation uniformity.

In the present invention, when forming a metal film such as copper by using a chlorinated metal reduction method, attention is paid to the temperature distribution in the surface of the substrate to be formed and the flow of reactive species used in the film forming reaction. By devising the configuration so that the film thickness can be appropriately controlled, the uniformity of the film formation is improved. In particular, a metal film formed using the chlorinated metal reduction method tends to have a thick film at the center of the substrate and a thin film at the peripheral edge of the substrate. This is because when the film is formed using the chlorinated metal reduction method, the reduction action acts more strongly than the etching action in the central part of the substrate, and the film formation is promoted. This is probably because the etching action is stronger than the reduction action and the film formation is suppressed. Accordingly, if the temperature distribution is in the plane of the substrate on which the film is formed, the substrate temperature at the central part is increased, the reducing action at the central part of the substrate is weakened, and the progress of the film formation is suppressed. The uniformity of film formation can be improved by lowering the substrate temperature of the portion, strengthening the reducing action at the peripheral edge of the substrate, and promoting the progress of film formation at the peripheral edge of the substrate. In addition, if the flow of reactive species used in the film formation reaction, the flow of reactive species flowing from the central portion of the substrate to the peripheral portion is strengthened, or the residence time of the reactive species flowing to the peripheral portion of the substrate is increased. In addition, by making the residence time of the reactive species equal on the entire surface of the substrate, the film formation reaction on the peripheral edge of the substrate is increased, the film thickness on the peripheral edge of the substrate is increased, or the film is formed on the entire surface of the substrate. The uniformity of film formation can be improved by equalizing the amount of reaction.
Therefore, an embodiment of a metal film manufacturing apparatus and a metal film manufacturing method according to the present invention will be described in detail with reference to the drawings shown below.

  As shown in FIG. 1, the metal film manufacturing apparatus of the present embodiment includes a chamber 1 made of an insulating material (for example, ceramics) formed in a cylindrical shape, and a columnar support base provided at the bottom of the chamber 1. 2 and an adsorption table 4 provided on the support table 2 for adsorbing the substrate 3. As the suction stand 4, for example, a so-called electrostatic chuck using electrostatic force is used. A flow path 5 through which a refrigerant flows is provided inside the support base 2, and the refrigerant is supplied from a refrigerant supply device 6 (refrigerant supply means). The support base 2 is controlled to a predetermined temperature (for example, a temperature at which the substrate 3 is maintained at 100 ° C. to 200 ° C.) by the refrigerant supplied from the refrigerant supply device 6, and further, the arrangement of the refrigerant flow paths is devised. Thus (see FIGS. 2 and 3 described later), the temperature distribution on the upper surface of the support base 2 and the temperature distribution in the surface of the substrate 3 are controlled to a desired state. The refrigerant used in the refrigerant supply device 6 may be any refrigerant as long as the above temperature range can be controlled. For example, the vapor pressure at a high temperature (the above temperature range) is low and the temperature is high. Perfluoropolyether etc. that can be used for temperature control in are used.

  Above the chamber 1, the upper surface of the chamber 1 is an opening, and the opening is closed by a disk-shaped ceiling plate 7 made of an insulating material (for example, ceramic). Above the ceiling plate 7, a plasma antenna 8 made of a spiral coil parallel to the upper surface of the ceiling plate 7 is provided. A matching unit 9 and a power source 10 are connected to the plasma antenna 8. The plasma antenna 8, the matching unit 9 and the power source 10 constitute a plasma generating means. By supplying high frequency (RF) from the matching unit 9 and the power source 10 to the plasma antenna 8, the gas inside the chamber 1 is turned into plasma. . Note that the interior of the chamber 1 closed by the ceiling plate 7 is maintained at a predetermined pressure by a vacuum device (not shown).

Further, above the chamber 1, in the vicinity of the metal member 11 inside the chamber 1, the concentration is ≦ 50%, preferably 10% by halogen-containing source gas (for example, helium (He), argon (Ar)). A plurality of nozzles 12 for supplying chlorine (Cl ₂ ) gas diluted to a certain degree are provided in the cylindrical portion of the chamber 1, above the nozzles 12, and below the ceiling plate 7, on the inner wall of the chamber 1. A metal member 11 having a plurality of bar members 11a extending from the metal member 11 is provided. A flow rate controller 13 is connected to each nozzle 12 to constitute a raw material gas supply means, and the flow rate of the raw material gas is controlled by a control command from the controller 14. The metal member 11 is composed of a plurality of rod-shaped metal (for example, copper) rod members 11a, and each rod member 11a is in contact with the tip portion of the adjacent rod member 11a. Rather, each base end is fixed to the inner wall of the chamber 1 so as to extend toward the center of the chamber 1. As a result, each bar member 11a has an electrically independent structure so that the electromagnetic field incident on the chamber 1 from the plasma antenna 8 is not shielded.

In the metal film manufacturing apparatus described above, the source gas is supplied from the nozzle 12 into the chamber 1 and the electromagnetic wave is incident from the plasma antenna 8 into the chamber 1, whereby the Cl ₂ gas is ionized and the Cl ₂ gas plasma ( Source gas plasma) 15 is generated. Although the metal member 11 which is a conductor exists below the plasma antenna 8, the metal member 11 is disposed in a discontinuous state with respect to the electric flow direction of the plasma antenna 8. A Cl ₂ gas plasma 15 is stably generated between the substrate 3 and the substrate 3, that is, below the metal member 11. Due to Cl radicals by the Cl ₂ gas plasma 15, an etching reaction occurs in the metal member 11, and a precursor (Cu _x Cl _y ) 16 is generated. At this time, the metal member 11 is maintained at a predetermined temperature (for example, 200 ° C. to 400 ° C.) higher than the temperature of the substrate 3 by the Cl ₂ gas plasma 15.

  The precursor 16 generated inside the chamber 1 is conveyed to the substrate 3 controlled to a temperature lower than that of the metal member 11. The precursor 16 transported to the substrate 3 is adsorbed on the substrate 3, and the adsorbed precursor 16 is made only Cu by a reduction reaction by Cl radicals supplied in the vicinity of the substrate 3, and Cu is formed on the surface of the substrate 3. A thin film 17 is produced. At this time, gases and etching products not involved in the reaction are exhausted from the exhaust port 18.

The main reaction at this time can be expressed by the following equation. In the following reaction formula, Cl ^* represents a chlorine radical, (s) represents a solid state, (g) represents a gas state, and (ad) represents an adsorption state. In addition, as the precursor 16, not only CuCl but also Cu _x Cl _y having a different composition ratio is generated. Here, only representative generation species are shown, and the reaction formula is simplified.
(1) Plasma dissociation reaction Cl ₂ → 2Cl ^*
(2) Etching reaction Cu (s) + Cl ^* → CuCl (g)
(3) Adsorption reaction to substrate CuCl (g) → CuCl (ad)
(4) Film formation reaction CuCl (ad) + Cl ^* → Cu (s) + Cl ₂ ↑

In the above reaction, the film formation rate depends on factors such as the strength of the flow of reactive species (CuCl, Cl ^* ) existing near the substrate surface and the substrate temperature, and naturally the uniformity within the substrate surface is also this. It depends on such factors. Conversely, controlling such a factor is an important point for achieving excellent uniformity. In the present invention, the configuration described below is provided to control such a factor.

In the metal film manufacturing apparatus described above, the source gas has been described by taking Cl ₂ gas diluted with He, Ar, etc. as an example, but Cl ₂ gas is used alone or HCl gas is applied. Is also possible. When HCl gas is applied, HCl gas plasma is generated as the source gas plasma, but the precursor generated by etching the metal member 11 is Cu _x Cl _y . Therefore, the source gas may be any gas containing chlorine, and a mixed gas of HCl gas and Cl ₂ gas can also be used. In addition to chlorine, fluorine (F), bromine (Br), iodine (I), and the like can be applied as the halogen contained in the source gas.

Further, the material of the metal member 11 is not limited to copper (Cu), but may be silver (Ag), gold (Au), platinum (Pt), tantalum (Ta) if it is a halide forming metal, preferably a chloride forming metal. ), Titanium (Ti), tungsten (W), or the like. In this case, the precursor is a halide (chloride) such as Ag, Au, Pt, Ta, Ti, W, and the thin film formed on the surface of the substrate 3 is Ag, Au, Pt, Ta, Ti, W, or the like. Become.
Furthermore, regarding the positional relationship between the metal member 11 and the nozzle 12, the metal member 11 does not necessarily have to be positioned above the nozzle 12 (see FIG. 1). For example, the metal member 11 is disposed below the nozzle 12. May be.

Here, the structure of the support base 2 is demonstrated using FIG.
2A is a diagram illustrating a configuration of the support base 2 in the side surface direction, and FIG. 2B is a diagram illustrating a configuration of the support base 2 in the top surface direction.

  In the metal film manufacturing apparatus of the present embodiment, inside the support base 2, along the height direction of the support base 2, in the vicinity of the periphery of the support base 2, as shown in FIGS. A plurality of flow paths 5a (first flow paths) formed at the center of the support base 2 along the height direction of the support base 2, and a second flow path 5b (second flow path). A plurality of flow paths 5c (third flow paths) that are formed radially in parallel with the upper surface of the support base 2 and communicate with the plurality of flow paths 5a and one flow path 5b are provided. Is supplied in the direction indicated by the arrow in FIG. That is, on the upper surface side of the support base 2, the refrigerant flows in from the plurality of flow paths 5 a on the peripheral edge side of the support base 2, and the flowed refrigerant flows through the plurality of flow paths 5 c toward the center in the radial direction. And it is the composition which flows out from one central flow path 5b. The refrigerant supplied from the refrigerant supply device 6 is controlled to a predetermined temperature and supplied to the support 2 by the refrigerant supply device, but the refrigerant flows, in other words, the refrigerant that passes through the flow paths 5a to 5c. The amount of refrigerant per unit time is set to be equal to or less than a predetermined flow rate. Therefore, on the upper surface side of the support base 2, the temperature changes in the radial direction so that the temperature on the peripheral edge side is low and the temperature on the central part is high. It is possible to form a temperature distribution.

  By providing the flow path 5 provided inside the support base 2 with the above configuration, a temperature distribution is provided on the upper surface of the support base 2 such that the temperature at the peripheral edge side is low and the temperature at the center is high, As a result, a similar temperature distribution can be imparted to the substrate 3 held via the suction table 4. Therefore, since the substrate 3 itself has a temperature distribution such that the temperature at the peripheral portion is low and the temperature at the central portion is high, the progress of film formation at the central portion of the substrate is suppressed, and the film formation at the peripheral portion of the substrate is suppressed. The progress can be promoted to further improve the uniformity of the film formation.

In the metal film manufacturing apparatus having the above-described configuration, since Cl ₂ gas is used, the reaction efficiency is greatly improved, the film formation speed is increased, the cost can be significantly reduced, and the substrate 3 is made of metal. Since the temperature is controlled to be lower than that of the member 11, a high-quality Cu thin film 17 with less residual impurities such as chlorine can be generated. In addition to these advantages, the temperature distribution in the substrate surface is controlled by the configuration as shown in FIG. 2, so that a film having excellent uniformity can be formed.

The metal film production apparatus of this example is the same as the metal film production apparatus of FIG. 1 described in Example 1, except that the support base 2 is a support base 20 shown in FIG. Therefore, since the configuration other than the support base 20 is the same as that of the first embodiment, the configuration of the support base 20 will be described here.
FIG. 3 is a diagram showing the configuration of the support base 2 in the upper surface direction.

  In the metal film manufacturing apparatus of the present embodiment, one flow path 21 a (first flow path) formed in the vicinity of the periphery of the support base 20 along the height direction of the support base 20 in the support base 20. ), One flow path 21b (second flow path) formed in the center of the support base 20 along the height direction of the support base 20, and a spiral shape parallel to the upper surface of the support base 20, One flow path 21c (third flow path) that connects one flow path 21a and one flow path 21b is provided, and the refrigerant supplied from the refrigerant supply device 6 is indicated by an arrow in FIG. Flowed in the direction. That is, on the upper surface side of the support base 20, the refrigerant flows in from the flow path 21a on the peripheral edge side of the support base 20, and the flowed refrigerant flows through the spiral flow path 21c toward the center along the flow path. And is discharged from the central flow path 21b. Therefore, similarly to the support base 2 of the first embodiment, a temperature distribution that varies in the radial direction is formed on the upper surface side of the support base 20 such that the temperature on the peripheral edge side is low and the temperature on the central part is high. Is possible.

  By providing the flow path 21 provided inside the support table 20 with the above-described configuration, a temperature distribution is provided on the upper surface of the support table 20 such that the temperature at the peripheral edge side is low and the temperature at the center is high, As a result, a similar temperature distribution can be imparted to the substrate 3 held via the suction table 4. Therefore, since the substrate 3 itself has a temperature distribution such that the temperature at the peripheral portion is low and the temperature at the central portion is high, the progress of film formation at the central portion of the substrate is suppressed, and the film formation at the peripheral portion of the substrate is suppressed. The progress can be promoted to further improve the uniformity of the film formation.

  In the present embodiment, only one inflow channel 21a is provided, but a plurality of inflow channels may be provided as in the first embodiment.

The metal film production apparatus of the present example (reference example) is the same as the metal film production apparatus of FIG. Therefore, since the configuration other than the suction table 4 is the same as that of the first embodiment, the configuration of the suction table 4 will be described here.

  In the metal film manufacturing apparatus of the present embodiment, the suction table 4 is provided with a concave portion 4a having a shallow depth at the center of the upper surface of the suction table 4 in contact with the substrate 3, as shown in FIG. The shape of the concave portion 4a viewed from the top surface may be a rectangle, but preferably a circle. By providing the concave portion 4 a at the center of the upper surface of the suction table 4, a gap is provided between the suction table 4 and the substrate 3 at the center.

  The substrate 3 is cooled by the support table 2 via the suction table 4. Normally, the suction table 4 brings the substrate 3 into close contact with the suction table 4 in order to improve the cooling efficiency of the substrate 3 by the support table 2. Thus, the thermal conductivity with the substrate 3 is improved by improving the contact property. However, in the present embodiment, by providing the suction table 4 with the recess 4a, a gap is formed between the substrate 3 and the suction table 4, and the thermal conductivity at the center of the substrate 3 is lowered.

  By adopting a configuration in which the suction table 4 is provided with the recess 4a at the center, the cooling efficiency at the center of the substrate 3 is suppressed, and the temperature at the peripheral side is low and the temperature at the center is high. The distribution is given to the substrate 3, and as a result, the progress of the film formation at the center of the substrate is suppressed, the progress of the film formation at the peripheral edge of the substrate is promoted, and the uniformity of the film formation is further improved. Can do.

The metal film production apparatus of the present example (reference example) also has a configuration in which the adsorption table 4 is configured as shown in FIG. 5 in the metal film production apparatus of FIG. Therefore, since the configuration other than the suction table 4 is the same as that of the first embodiment, the configuration of the suction table 4 will also be described here.

  In the metal film manufacturing apparatus of the present embodiment, the suction table 4 is provided with a rough surface portion 4b having a surface roughness rougher than that of the peripheral portion at the center of the upper surface of the suction table 4 in contact with the substrate 3, as shown in FIG. ing. The rough surface portion 4b may have a rectangular shape, but preferably has a circular shape. By providing the rough surface portion 4b at the center of the upper surface of the suction table 4, a gap is provided between the suction table 4 and the substrate 3 at the center. Accordingly, by providing the suction surface 4 with the rough surface portion 4b, the adhesion between the substrate 3 and the suction table 4 is reduced, and the thermal conductivity at the center of the substrate 3 is reduced, as in the third embodiment. .

  By adopting a structure in which the suction table 4 is provided with the rough surface portion 4b, the cooling efficiency at the central portion of the substrate 3 is suppressed, and the temperature distribution is such that the temperature on the peripheral portion side is low and the temperature on the central portion is high. As a result, it is possible to suppress the progress of film formation at the central portion of the substrate, promote the progress of film formation at the peripheral edge of the substrate, and further improve the uniformity of the film formation. .

  Normally, the surface roughness of the adsorption table 4 is processed to Ra = 0.2 μm. However, in this embodiment, according to the knowledge of the inventors, the surface roughness of the rough surface portion 4b is set to Ra = 0. When processed to about 6 to 1.0 μm, desired results could be obtained.

  In addition, you may make it form the surface roughness of the adsorption stand 4 so that it may change from coarse to dense stepwise in the radial direction from the center part to the peripheral part.

  In the third and fourth embodiments described above, any of the support table 2 of the first embodiment and the support table 20 of the second embodiment may be used as the support table at the lower part of the suction table 4, or the upper surface thereof. Alternatively, a conventional support base having no temperature distribution may be used.

  In the above Examples 1 to 4, the temperature distribution in the surface of the substrate is appropriately set to improve the uniformity of film formation. However, in Examples 6 to 8 below, including this example, By adopting a configuration in which the flow of reactive species used for the film formation reaction can be appropriately set, the film formation uniformity is improved.

Therefore, the metal film manufacturing apparatus of this embodiment will be described with reference to FIG.
In addition, since the metal film production apparatus of the following Examples 6-8 including the metal film production apparatus of a present Example is a structure substantially the same as the metal film production apparatus of FIG. 1, the overlapping description is abbreviate | omitted, A different configuration will be described.

The metal film production apparatus of the present example (reference example) is that the LF antenna 31 (electromagnetic field generating means) is provided at the lower center of the substrate 3, specifically, at the central part inside the support base 2. The configuration is different from that of the metal film manufacturing apparatus shown in FIG. A matching unit and a power source (not shown) are connected to the LF antenna 31, and by supplying a low frequency (LF) to the LF antenna 31, a substantially conical electric field distribution is formed in the space above the center of the substrate 3. An electromagnetic field 32 is formed. Usually, the plasma antenna 8 is fed with a high frequency (RF) of GHz level, whereas the LF antenna 31 is fed with a lower frequency, for example, a frequency of MHz to KHz level.

  When the electromagnetic field 32 is formed in the space above the central portion of the substrate 3 using the above configuration, the reactive species 33 (for example, CuCl, Cl ions, etc.) used for the film formation reaction are generated on the outer periphery of the formed electromagnetic field 32. And the flow to the periphery of the substrate 3 becomes stronger. As a result, it is possible to increase the film formation reaction at the peripheral edge of the substrate, suppress the thinning at the peripheral edge of the substrate, and improve the uniformity of the film formation.

  As the shape of the LF antenna 31, an appropriate one is set in consideration of the shape of the electromagnetic field 32 to be formed. In addition, the shape of the LF antenna 31, the feeding frequency, power, and the like are optimally set depending on the reactive species 33 used for film formation.

The metal film production apparatus of this example (reference example) shown in FIG. 7 also sets the flow of reactive species used for the film formation reaction appropriately in order to improve the film formation uniformity as in Example 5. The specific configuration is significantly different from that of the fifth embodiment.

  Specifically, as shown in FIG. 7, a ring-shaped ring member 41 made of an insulating material (for example, ceramics or the like) surrounding the periphery of the substrate 3 around the substrate 3, specifically, around the suction table 4. Is provided.

  With the above configuration, the ring member 41 causes the stagnation of the flow of the reactive species 33 at the peripheral portion of the substrate 3, thereby reducing the flow rate of the reactive species 33 at the peripheral portion of the substrate 3. As a result, the residence time of the reactive species 33 at the peripheral edge of the substrate 3 is lengthened, the film forming reaction at the peripheral edge of the substrate is increased, the thinning at the peripheral edge of the substrate is suppressed, and the film formation uniformity is improved. Can be improved.

The metal film production apparatus of this example (reference example) shown in FIG. 8 has a configuration substantially the same as that of the metal film production apparatus of Example 6, and the reaction at the peripheral edge of the substrate 3 is similar to Example 6. By increasing the residence time of the seed 33, the film thickness at the periphery of the substrate 3 is suppressed and the uniformity of film formation is improved. In the case of Example 6, if the residence time of the reactive species 33 becomes too long, on the contrary, the film thickness at the peripheral edge of the substrate 3 may become too thick. Is shown in this example.

Specifically, as shown in FIG. 8, a ring-shaped porous ring member made of an insulating material (for example, ceramics) surrounding the substrate 3 around the substrate 3, specifically, around the adsorption table 4. 4 2 is provided by a plurality of through holes 42a formed so as to penetrate the porous ring member 42, as reactive species 33 is not too stays, on the outside of the porous ring member 42, directing the flow of reactive species 33 It is what I did.

  With the above configuration, the stagnation of the flow of the reactive species 33 is generated at the peripheral edge of the substrate 3 by the porous ring member 42, but the flow resistance against the flow of the reactive species is appropriately adjusted by the through-hole 42a, and excessive reaction occurs. The seed 33 passes through the through hole 42 a and flows out to the outside of the porous ring member 42, and appropriately reduces the flow rate of the reactive seed 33 at the peripheral edge of the substrate 3. As a result, the residence time of the reactive species 33 at the peripheral portion of the substrate 3 becomes an appropriate length, the film forming reaction at the peripheral portion of the substrate is made appropriate, and the thinning at the peripheral portion of the substrate is suppressed, so Uniformity can be improved.

The metal film production apparatus of this example (reference example) shown in FIG. 9 also has an appropriate flow of reaction species used for the film formation reaction in order to improve the film formation uniformity as in the case of Examples 6 and 7. However, in this embodiment, attention is focused on equalizing the residence time of the reactive species on the entire surface of the substrate, and the specific configuration is different from those in Embodiments 6 and 7. It is a big difference.

  Specifically, a disk-shaped flow rate made of an insulating material (for example, ceramics) provided with a plurality of through holes 43a on the lower side of the metal member 11 and on the upper side of the substrate 3 in parallel with the substrate 3. A distribution plate 43 is provided. The plurality of through-holes 43a are formed so that the opening area is large at the central part and the opening area is small at the peripheral part.

  With the above configuration, in the central portion above the substrate 3, the flow of the reactive species 33 can be distributed in a large amount, and the change in the circumferential direction of the flow velocity of the reactive species 33 along the surface of the substrate 3 can be reduced. As a result, the residence time of the reactive species 33 flowing from the central part to the peripheral part on the surface of the substrate 3 is equal in the radial direction of the substrate 3, and the amount of film formation reaction is equalized on the entire surface of the substrate 3. Thus, the uniformity of film formation can be improved.

  The flow distribution plate 43 is controlled to a temperature equivalent to that of the metal member 11 or at least higher than that of the substrate 3 so that the reactive species 33 do not adhere. However, even under such conditions, there is a possibility that the reactive species 33 may adhere, so it is desirable to perform cleaning periodically.

  The present invention is mainly applied when a metal film is formed by using a chlorinated metal reduction method, but is not necessarily limited to the chlorinated metal reduction method. The present invention can also be applied to a film method such as a CVD method or a PVD method.

It is a schematic diagram illustrating an example (Example 1) of an embodiment of the metal film works made device according to the present invention. It is a figure which shows the structure of the support stand shown in FIG. Another example of embodiment of the metal film works made device according to the present invention (Example 2) shows. Another example of embodiment of the metal film works made device according to the present invention (Example 3) shows. Another example of embodiment of the metal film works made device according to the present invention (Example 4) shows. It is a diagram illustrating another example embodiment of the metal film works made device according to the present invention (Example 5). It is a diagram illustrating another example embodiment of the metal film works made device according to the present invention (Example 6). It is a diagram illustrating another example embodiment of the metal film works made device according to the present invention (Example 7). It is a diagram illustrating another example embodiment of the metal film works made device according to the present invention (Example 8).

DESCRIPTION OF SYMBOLS 1 Chamber 2 Support stand 3 Substrate 3a Concave part 3b Rough surface part 4 Adsorption stand 5 (5a, 5b, 5c) Flow path 6 Refrigerant supply device 7 Ceiling plate 8 Plasma antenna 9 Matching device 10 Power supply 11 Metal member 12 Nozzle 13 Flow controller 14 Control device 15 Plasma gas 16 Precursor 17 Metal film 18 Exhaust port 21 (21a, 21b, 21c) Flow path 31 LF antenna 32 Electromagnetic field 41 Ring member 42 Porous ring member 43 Flow distribution plate

Claims (3)

A chamber;
A support provided at the bottom of the chamber and having a flow path formed therein;
A suction stand fixed on the support base, on which the substrate is sucked;
Refrigerant supply means connected to the flow path of the support base and supplying a refrigerant controlled to a predetermined temperature to the flow path;
A metal member provided above the chamber and facing the substrate;
A source gas supply means for supplying a source gas containing halogen in the vicinity of the metal member;
Plasma of the source gas supplied into the chamber is generated to generate the radicals of the halogen, and the metal member is etched to form a precursor composed of the metal component contained in the metal member and the halogen. Plasma generating means for generating,
The flow path of the support base is a plurality of first flow paths provided at the peripheral edge of the support base, one second flow path provided at the center of the support base, and a radial shape parallel to the upper surface of the support base. A plurality of third channels that communicate with the plurality of first channels and the one second channel,
The metal film manufacturing apparatus, wherein the refrigerant supplied from the refrigerant supply means is circulated from the plurality of first flow paths to the one second flow path through the plurality of third flow paths. A chamber;
A support provided at the bottom of the chamber and having a flow path formed therein;
A suction stand fixed on the support base, on which the substrate is sucked;
Refrigerant supply means connected to the flow path of the support base and supplying a refrigerant controlled to a predetermined temperature to the flow path;
A metal member provided above the chamber and facing the substrate;
A source gas supply means for supplying a source gas containing halogen in the vicinity of the metal member;
Plasma of the source gas supplied into the chamber is generated to generate the radicals of the halogen, and the metal member is etched to form a precursor composed of the metal component contained in the metal member and the halogen. Plasma generating means for generating,
The flow path of the support base includes one or a plurality of first flow paths provided at a peripheral portion of the support base, one second flow path provided at the center of the support base, and an upper surface of the support base. One or more third flow paths that are formed in a spiral shape in parallel and communicate with the one or more first flow paths and the one second flow path;
The refrigerant supplied from the refrigerant supply means is circulated from the one or more first flow paths to the one second flow path through the one or more third flow paths. Metal film manufacturing equipment. Place the substrate in the chamber,
In the vicinity of the metal member disposed in the chamber, a source gas containing halogen is supplied, and plasma of the source gas is generated to generate radicals of the halogen,
Etching the metal member with the halogen radicals to produce a precursor comprising the metal component and the halogen contained in the metal member;
The substrate is controlled to a temperature lower than that of the metal member, and the refrigerant flowing through the inside of the support table to which the adsorption table for adsorbing the substrate is fixed is passed from the outer peripheral side of the support table in the vicinity of the upper surface of the support table. The temperature distribution in the surface of the substrate is made low at the peripheral part and high at the central part by circulating to the center of the support base ,
A method for producing a metal film, comprising: adsorbing the precursor to the substrate; and reducing the adsorbed precursor with the radical of the halogen to produce a metal film.

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