JP4299687B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device including a package on which a semiconductor element having an imaging function and a light receiving function is mounted and an optical member such as a filter and a lens.

  11 is a perspective view showing a configuration of a conventional semiconductor device 90, and FIG. 12 is a cross-sectional view taken along a plane JJ shown in FIG. The semiconductor device 90 includes an envelope 91 having a hollow rectangular parallelepiped shape. The envelope 91 is made of a resin in which a main component epoxy resin, a curing agent phenol resin, an amine curing accelerator, a release wax, carbon black, an adhesive, a filler mixed with silica fine particles, etc. are mixed at a predetermined ratio. Is formed. The semiconductor device 90 constitutes a resin-made SOP (Small Outline Package).

Inside the envelope 91, a semiconductor element 98 having an imaging function is attached by a fixing member 92 made of a thermosetting resin. An electrode terminal 80 is provided on the upper surface of the semiconductor element 98. A plurality of external terminals 97 are provided on the side wall of the envelope 91 so as to extend inward from the outer wall. An internal terminal 96 is provided inside the envelope 91 of each external terminal 97. The internal terminal 96 and the electrode terminal 80 are connected by a bonding wire. A transparent glass plate 98 for dustproof and moistureproof is provided so as to cover the opening formed in the envelope 91. The glass plate 98 is fixed to the upper surface of the envelope 91 by a sealing material 94.
JP-A-11-54543 (5th page, FIG. 7)

  However, in the conventional configuration described above with reference to FIGS. 11 and 12, large packages such as DIP (Dual In-Line Package) and QFP (Quad Flat Package) are currently mainstream. However, the trend of equipment is toward light, thin and short, and despite the fact that components applied to them in the market are naturally required to be miniaturized, electronic components are always in line with market demands. The actual situation is that the miniaturization and thinning have not progressed.

  Since the conventional package described above has a structure in which the external terminal 97 is embedded in the envelope 91, a complicated sealing process is required to form the external terminal 97 inside the envelope 91. In such a sealing process, it is difficult to ensure the positional accuracy between the envelope 91 and the external terminal 97, and a resin film is attached to the surface of the external terminal 97 even after the external terminal 97 is formed. There was a problem that the yield decreased.

  In addition, since the electrode terminal 80 provided in the semiconductor element 98 and the external terminal 97 are configured to be electrically connected by a bonding wire, a process related to this is complicated, and there is a problem in terms of yield. there were.

  An object of the present invention is to provide a semiconductor device that can be manufactured with a high yield by a simple process.

  A semiconductor device according to the present invention includes an optical member, a semiconductor element having a main surface formed to face the optical member, and a plurality of edges formed on the periphery of the surface of the optical member facing the semiconductor element. A conductive electrode film, a plurality of electrode terminals respectively formed on a peripheral edge of the main surface of the semiconductor element so as to face each of the plurality of conductive electrode films, and joined to the conductive electrode film A plurality of metal protrusions formed on each of the plurality of electrode terminals; an envelope provided on the plurality of conductive electrode films so as to surround the semiconductor element; the semiconductor element; A sealing material applied between the semiconductor element and the envelope to fix the envelope and the optical member, and an outer side of the envelope with respect to each of the plurality of conductive electrode films Multiple external terminals joined at Characterized by including the.

  According to the present invention, it is possible to provide a semiconductor device that can be manufactured with a high yield by a simple process.

  In the semiconductor device according to the present embodiment, the plurality of conductive electrode films formed on the periphery of the surface facing the semiconductor element of the optical member, and the semiconductor element so as to face each of the plurality of conductive electrode films. A plurality of electrode terminals respectively formed on the peripheral edge of the main surface; a plurality of metal protrusions formed on each of the plurality of electrode terminals so as to be joined to the conductive electrode film; An envelope provided on the plurality of conductive electrode films; a sealing material applied between the semiconductor element and the envelope to fix the semiconductor element, the envelope, and the optical member; A plurality of external terminals joined to each of the plurality of conductive electrode films outside the envelope are provided. For this reason, since the external terminal electrically connected with the semiconductor element can be provided outside the envelope, it is not necessary to embed the external terminal in the envelope. As a result, a complicated sealing process for forming an external terminal in the envelope is unnecessary, and a semiconductor device can be manufactured by a simple process.

  In this embodiment, the envelope has an outer surface formed on the outside, and a plurality of grooves for fixing the plurality of external terminals to the outer surface of the envelope. Is preferably formed.

  It is preferable that the apparatus further includes a moisture blocking member provided so as to cover the envelope in order to block moisture toward the semiconductor element.

  It is preferable that a step portion for fitting the moisture blocking member is formed in the envelope.

  In the semiconductor device according to the present embodiment, a semiconductor element having a main surface formed so as to face the optical member, and a plurality of conductive electrodes formed on the periphery of the surface of the optical member facing the semiconductor element A plurality of electrode terminals formed on the periphery of the main surface of the semiconductor element so as to face each of the film, a plurality of conductive electrode films, and a plurality of electrode terminals bonded to the conductive electrode film A plurality of metal protrusions formed on the substrate, a sealing material applied between the semiconductor element and the plurality of conductive electrode films to fix the semiconductor element and the optical member, and a plurality of conductive electrode films And a plurality of external terminals joined on the outside of the semiconductor element. For this reason, since the external terminal electrically connected with the semiconductor element can be provided outside the envelope, it is not necessary to embed the external terminal in the envelope. As a result, a complicated sealing process for forming the external terminal in the envelope is unnecessary, and the semiconductor device can be manufactured by a simple process.

  In this embodiment, it is preferable that helium gas is sealed in a space surrounded by the semiconductor element, the optical member, and the sealing material at a pressure equal to or lower than atmospheric pressure.

  Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1)
FIG. 1 is a perspective view showing the configuration of the semiconductor device 25 according to the first embodiment, and FIG. 2 is a cross-sectional view taken along the plane AA shown in FIG. The semiconductor device 25 includes an optical member 3 having a substantially rectangular parallelepiped shape. The optical member 3 is composed of glass, a filter, a lens, or the like.

  The semiconductor device 25 is provided with a semiconductor element 8 having a main surface 9 formed to face the optical member 3. A plurality of conductive electrode films 4 are formed on the periphery of the surface of the optical member 3 facing the main surface 9 of the semiconductor element 8 and the periphery of the opposite surface. In order to form the conductive electrode film 4, for example, a stacked film of Au / Ti / Al / In (2.0 μm / 0.1 μm / 0.2 μm / 0.1 μm) is deposited and etched into a desired shape. Finish. Moreover, you may employ | adopt the laminated film and mask vapor deposition from which material composition differs as another method.

  A plurality of electrode terminals 10 are formed on the periphery of the main surface 9 of the semiconductor element 8 so as to face each of the plurality of conductive electrode films 4. A plurality of metal protrusions 11 are formed on each of the plurality of electrode terminals 10 so as to be joined to the conductive electrode film 4.

  An envelope 19 is provided on the plurality of conductive electrode films 4 so as to surround the semiconductor element 8. In order to fix the semiconductor element 8, the envelope 19, and the optical member 3, a sealing material 24 is applied between the semiconductor element 8 and the envelope 19. The semiconductor device 25 includes a plurality of external terminals 7 joined to the respective conductive electrode films 4 on the outside of the envelope 19.

  The semiconductor element 8 is bonded to the lower surface of the optical member 3 by performing flip chip bonding by aligning the surface of the metal projection 11 with high accuracy near the tip of the conductive electrode film 4. In addition, there is no problem even if an anisotropic conductive film (ACF) is used for bonding. After joining the semiconductor element 8 to the optical member 3, an underfill such as a liquid resin is applied around the semiconductor element 8 so as to reach the side surface of the semiconductor element 8.

  An envelope 19 having an opening 2 penetrating from above is bonded to a predetermined position, and alignment is performed so that the semiconductor element 8 is at a predetermined position in the opening 2 of the envelope 19.

  This liquid resin is cured by heating or ultraviolet irradiation. Finally, after attaching the external terminal 7 which has been subjected to exterior plating in advance to the attachment portion of the external terminal 7 in the plurality of conductive electrode films 4 formed on the upper surface and the lower surface of the optical member 3, heating is performed by applying solder or conductive resin. To fix.

  The semiconductor device 25 configured in this manner is configured such that the external terminal 7 is not embedded in the envelope 19 and does not have a bonding wire. For this reason, a semiconductor device can be manufactured by a simple assembly process without a complicated process.

  Thereby, the process can be simplified, the yield can be improved, and at the same time, the reliability can be improved. Further, since the inductance component of the bonding wire used for the connection between terminals is reduced, the electrical characteristics in terms of frequency can be improved.

  Further, since the structure has no bottom of the envelope and the semiconductor element is supported by the inner side surface of the envelope, the thickness can be reduced.

  Although the example which used the thermosetting resin for the material of a package was demonstrated, this invention is not limited to this.

  In addition, although the example which used the quad type | mold for the external shape of a package was demonstrated as this Embodiment, you may use a dual in-line type | mold. Moreover, although the example which used liquid resin as an underfill material was demonstrated, you may be a semi-hardened type sheet-like resin.

  As described above, according to the first embodiment, the plurality of conductive electrode films 4 formed on the periphery of the surface of the optical member 3 facing the semiconductor element 8 and the plurality of conductive electrode films 4 are opposed to each other. Thus, a plurality of electrode terminals 10 formed on the periphery of the main surface 9 of the semiconductor element 8 and a plurality of metal protrusions formed on each of the plurality of electrode terminals 10 so as to be joined to the conductive electrode film 4 11, an envelope 19 provided on the plurality of conductive electrode films 4 so as to surround the semiconductor element 8, and the semiconductor element 8 to fix the semiconductor element 8, the envelope 19, and the optical member 3. A sealing material 24 applied between the outer periphery 19 and the envelope 19, a plurality of conductive electrode films 4, and a plurality of external terminals 7 joined to the outside of the envelope 19. For this reason, since the external terminal 7 electrically connected to the semiconductor element 8 can be provided outside the envelope 19, it is not necessary to embed the external terminal 7 in the envelope 19. As a result, a complicated sealing process for forming the external terminal 7 in the envelope 19 is unnecessary, and a semiconductor device can be manufactured by a simple process.

(Embodiment 2)
FIG. 3 is a perspective view showing the configuration of the semiconductor device 25A according to the second embodiment, and FIG. 4 is a cross-sectional view along the plane BB shown in FIG. The same components as those of the semiconductor device 25 according to the first embodiment described above with reference to FIGS. 1 and 2 are denoted by the same reference numerals. Therefore, detailed description of these components is omitted.

  The difference from the semiconductor device 25 according to the first embodiment described above is that a plurality of vertical grooves 14 for fixing the plurality of external terminals 7 are formed on the outer surface of the envelope 19. The groove width and groove depth of the vertical groove 14 are such that the external terminal 7 can be accommodated. The external terminals 7 are preliminarily plated.

  In the semiconductor device 25A obtained in this way, the belly portion of the external terminal 7 is fixed by the vertical groove 14 formed in the envelope 19, so that in addition to the effects described in the first embodiment, the external device 7A The deformation of the terminal 7 can be prevented, and the effect that the positional accuracy of the external terminal 7 can be improved can be obtained. As a result, an inexpensive semiconductor device having the external terminal 7 which is small and hardly deformed can be realized.

(Embodiment 3)
FIG. 5 is a perspective view showing the configuration of the semiconductor device 25B according to the third embodiment, and FIG. 6 is a cross-sectional view along the plane CC shown in FIG. The same components as those of the semiconductor device 25 according to the first embodiment described above with reference to FIGS. 1 and 2 are denoted by the same reference numerals. Therefore, detailed description of these components is omitted.

  The difference from the semiconductor device 25 according to the first embodiment described above is that the moisture shielding member 13 is provided in the step provided on the opening 2 side of the lower surface of the envelope 19. The moisture shielding member 13 is provided so as to cover the envelope 19 in order to block moisture directed to the semiconductor element 8. By sticking the moisture shielding member 13 to the bottom surface of the envelope 19 in this way, it is possible to prevent moisture from entering from the bottom surface side and to prevent the semiconductor element 8 from deteriorating.

(Embodiment 4)
FIG. 7 is a perspective view showing a configuration of a semiconductor device 25C according to the fourth embodiment, and FIG. 8 is a cross-sectional view taken along a plane DD shown in FIG. The same components as those of the semiconductor device 25 according to the first embodiment described above with reference to FIGS. 1 and 2 are denoted by the same reference numerals. Therefore, detailed description of these components is omitted.

  The difference from the semiconductor device 25 according to the first embodiment described above is that a plurality of vertical grooves 14 for fixing the plurality of external terminals 7 are formed on the outer surface of the envelope 19, respectively, The moisture shielding member 13 is provided at a step provided on the opening 2 side of the lower surface of the envelope 19.

  As described above, when the plurality of vertical grooves 14 for fixing the plurality of external terminals 7 are formed, the belly portion of the external terminal 7 is fixed by the vertical grooves 14 formed in the envelope 19. The deformation of the terminal 7 can be prevented, and the positional accuracy of the external terminal 7 can be improved. Then, when the moisture shielding member 13 is bonded to the bottom surface of the envelope 19, moisture can be prevented from entering from the bottom surface side, and deterioration of the semiconductor element 8 can be prevented.

(Embodiment 5)
FIG. 9 is a perspective view showing a configuration of a semiconductor device 25D according to the fifth embodiment, and FIG. 10 is a cross-sectional view taken along a plane EE shown in FIG.

  The same components as those of the semiconductor device 25 according to the first embodiment described above with reference to FIGS. 1 and 2 are denoted by the same reference numerals. Therefore, detailed description of these components is omitted.

  The difference from the semiconductor device 25 according to the first embodiment described above is that the envelope 19 is not provided, and the sealing member 24 is different from the semiconductor element 8 in order to fix the semiconductor element 8 and the optical member 3. It is a point applied between the plurality of conductive electrode films 4.

  The description of the fifth embodiment will be made with an example in which a thermosetting resin is used.

  First, in FIG. 9, the optical member 3 such as a filter or a lens is arranged at the top. In order to attach a plurality of external terminals 7 around the optical member 3, a plurality of conductive electrode films 4 are formed on the upper and lower surfaces.

  Each conductive electrode film 4 on the lower surface side of the optical member 3 is connected to the external terminal 7, and the semiconductor element 8 is to be joined in the metal protrusion 11 on the electrode terminal 10 provided around the main surface 9. It is formed as an internal terminal that extends inward to a location that is aligned with the position of the metal protrusion 11.

  The conductive electrode film 4 is formed, for example, by depositing and etching a laminated film of Au / Ti / Al / In (2.0 μm / 0.1 μm / 0.2 μm / 0.1 μm) to a desired shape. Moreover, you may employ | adopt the laminated film and mask vapor deposition different from material composition as another method. The semiconductor element 8 is bonded to the lower surface of the optical member 3 by performing flip chip bonding by aligning the surface of the metal protrusion 11 in the vicinity of the tip of the conductive electrode film 4 with high accuracy.

  In addition, there is no problem even if an anisotropic conductive film (ACF) is used for bonding. After joining the semiconductor element 8 to the optical member 3, an underfill such as a liquid resin is applied around the semiconductor element 8 so as to reach the side surface of the semiconductor element 8. Positioning is performed so that the semiconductor element 8 is at a predetermined position.

  This resin is cured by heating or ultraviolet irradiation. Finally, after attaching the external terminal 7 that has been previously plated to the external terminal 7 of the plurality of conductive electrode films 4 formed on the upper surface and the lower surface of the optical member 3, solder and conductive resin are applied and heated. Secure with.

  The semiconductor device 25D thus obtained does not have the envelope 19 and is fixed with a sealing material 24 such as an ultraviolet curable resin, so that a thinner semiconductor device 25 can be realized.

  In the first to fourth embodiments described above, the external terminal 7 mounting portions are provided on the upper surface and the lower surface of the optical member 3, but the external terminal 7 on the upper surface of the optical member 3 is provided for further miniaturization. The attachment portion may be removed, and the conductive electrode film 4 may be formed only on the lower surface.

  Further, in the imaging function type semiconductor device, the temperature rise of the main surface 9 portion of the semiconductor element 8 induces significant deterioration in performance. To solve this problem, the lower surface and the semiconductor element in the optical member 3 of the semiconductor device 25 A high-performance semiconductor device with excellent heat dissipation can be realized by sealing helium gas having a high thermal conductivity in a space between the main surface 9 and the main surface 9 at 8 at atmospheric pressure or lower.

  As described above, according to the semiconductor device according to the first to fifth embodiments, since the lead is not embedded in the envelope and does not have a bonding wire, it can be easily assembled without complicated processes. A semiconductor device can be configured. Thereby, the process can be simplified, the yield can be improved, and at the same time, the reliability can be improved. Further, since the inductance component of the bonding wire used for the connection between terminals is reduced, the electrical characteristics in terms of frequency can be improved.

  The present invention can be applied to a semiconductor device including a package on which a semiconductor element having an imaging function and a light receiving function is mounted and an optical member such as a filter and a lens.

1 is a perspective view illustrating a configuration of a semiconductor device according to a first embodiment. Sectional view along the plane AA shown in FIG. The perspective view which shows the structure of the semiconductor device which concerns on Embodiment 2. FIG. Sectional drawing along the surface BB shown in FIG. The perspective view which shows the structure of the semiconductor device which concerns on Embodiment 3. FIG. Sectional view along the plane CC shown in FIG. The perspective view which shows the structure of the semiconductor device which concerns on Embodiment 4. FIG. Sectional view along the plane DD shown in FIG. The perspective view which shows the structure of the semiconductor device which concerns on Embodiment 5. FIG. Sectional view along the plane EE shown in FIG. A perspective view showing a configuration of a conventional semiconductor device Sectional view along the plane JJ shown in FIG.

Explanation of symbols

3 Optical member 4 Conductive electrode film 7 External terminal 8 Semiconductor element 10 Electrode terminal 11 Metal protrusion 19 Enclosure 24 Sealed object 25 Semiconductor device

Claims (4)

An optical member;
A semiconductor element having a main surface formed to face the optical member;
A plurality of conductive electrode films formed on the periphery of the surface of the optical member facing the semiconductor element;
A plurality of electrode terminals respectively formed on the periphery of the main surface of the semiconductor element so as to face each of the plurality of conductive electrode films;
A plurality of metal protrusions formed on each of the plurality of electrode terminals so as to be bonded to the conductive electrode film;
An envelope provided on the plurality of conductive electrode films so as to surround the semiconductor element;
A sealing material applied between the semiconductor element and the envelope to fix the semiconductor element, the envelope and the optical member;
A semiconductor device comprising: a plurality of external terminals joined to each of the plurality of conductive electrode films on the outside of the envelope. The envelope has an outer surface formed on the outside;
The semiconductor device according to claim 1, wherein a plurality of grooves for fixing the plurality of external terminals are formed in the outer surface of the envelope.   The semiconductor device according to claim 1, further comprising a moisture blocking member provided so as to cover the envelope in order to block moisture directed to the semiconductor element. The semiconductor device according to claim 3 , wherein a step portion for fitting the moisture blocking member is formed in the envelope.

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