JP4273283B2 - Fine pattern forming material, fine plating pattern forming method using the same, and semiconductor device manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a water-soluble fine pattern forming material that generates a non-crosslinked water-insoluble compound in the presence of an acid, a fine pattern plating method using the same, and a method for manufacturing a semiconductor device.
[0002]
[Background Art and Problems to be Solved by the Invention]
In recent years, in the field of hard disk drive devices, a method for forming various metal plating patterns with extremely small line width intervals of 0.5 μm or less with high accuracy has been desired as the recording density is improved. In general, a fine plating pattern is formed by forming a resist pattern by photolithography, and then using the formed resist pattern as a mask to form a plating film on various underlying metal films by electrolytic plating or electroless plating. After that, the resist is removed by etching.
[0003]
On the other hand, in the field of semiconductor devices, with the high integration, there is a demand for extremely finer resist pattern line & space size or hole opening size. In general, formation of a fine pattern in a semiconductor manufacturing process is performed by a method of forming a resist pattern by a photolithography technique and then removing various base films by etching using the formed resist pattern as a mask.
[0004]
In any field, in order to form a fine etching pattern or plating pattern, a photolithography technique for obtaining a fine resist pattern is an important key.
[0005]
In order to achieve the demand for finer resist patterns, high-resolution technology is capable of super-resolution such as mask technology such as modified illumination technology and phase shift method in response to higher NA and shorter wavelengths. Research on exposure methods incorporating technology is underway. On the other hand, in resists, as the wavelength of light sources has been shortened, progress has been made from g-line and i-line novolak materials to materials that can handle chemical amplification processes. There is a limit to the transformation.
[0006]
Therefore, as a method for further reducing the space portion or the hole portion of the resist pattern obtained by the conventional exposure technique, in the field of semiconductor device manufacturing process, JP-A-6-250379, JP-A-7-134422, There are methods disclosed in JP-A-10-73927 and JP-A-11-204399. However, in these methods, intermixing between the resist pattern layer capable of supplying acid and the coating material covering the outer wall occurs, and there is a possibility that the resist pattern may be deformed. Therefore, there is a possibility that there is a problem in the storage stability of the composition itself.
[0007]
The present invention provides a water-soluble compound that does not generate intermixing between a resist pattern layer capable of supplying an acid and a coating material covering the outer wall and produces a non-crosslinked water-insoluble compound having excellent storage stability. An object of the present invention is to provide a fine pattern forming material, a method for forming a fine pattern plating using the material, and a method for manufacturing a semiconductor device.
[0008]
Means for Solving the Problem and Embodiment of the Invention
The present inventor has intensively studied to achieve the above object, and does not generate intermixing between the resist pattern layer capable of supplying an acid and the coating material covering the outer wall, and improves storage stability. Water-soluble fine pattern forming material that produces excellent non-crosslinked type water-insoluble compound, and water-soluble compound that causes intramolecular dehydration reaction especially in the presence of acid in fine pattern plating forming method and semiconductor device manufacturing method using the same Focused on.
[0009]
In addition, a material composed mainly of a heterocyclic alcohol and a water-soluble polymer compound does not generate intermixing with a resist pattern layer capable of supplying an acid, and is water-soluble fine with excellent storage stability. The present inventors have found that it is a pattern forming material, and have come to make a fine pattern plating forming method and a semiconductor device manufacturing method using the same.
[0010]
Therefore, the present invention
(1) A fine pattern forming material comprising a heterocyclic alcohol and a water-soluble polymer compound as main components, and a non-crosslinked type water-insoluble compound is formed in the presence of an acid,
(2) A step of forming a resist pattern capable of supplying an acid on the core substrate of the conductor, and the presence of acid without dissolving the resist pattern on the resist pattern using the fine pattern forming material. Forming a coating material layer that is insolubilized in water or an alcoholic aqueous solution, a processing step of forming an insolubilizing layer in water or an alcohol aqueous solution at an interface between the resist pattern and the coating material layer, and the resist pattern Dissolving the water or alcohol aqueous solution soluble part of the coating material layer without dissolving it, and forming an insolubilized film against the water or alcohol aqueous solution on the resist, and using this pattern as a mask by electroplating or electroless plating And a step of depositing and forming a conductor pattern. Over emissions forming method,
(3) A step of forming a resist pattern capable of supplying an acid on a semiconductor substrate, and using the fine pattern forming material, the resist pattern is not dissolved on the resist pattern, and the presence of the acid A step of forming a coating material layer that is insolubilized in water or an alcoholic aqueous solution, a treatment step of forming an insolubilized layer in water or an aqueous alcohol solution at an interface between the resist pattern and the coating material layer, and the resist pattern is not dissolved. And a step of dissolving a water or alcohol aqueous solution soluble portion of the coating material layer to form an insolubilized film with respect to water or an alcohol aqueous solution on the resist, and a step of etching the semiconductor substrate using this pattern as a mask. A method for manufacturing a semiconductor device is provided.
[0011]
Hereinafter, the present invention will be described in more detail.
The fine pattern forming material of the present invention comprises a heterocyclic alcohol and a water-soluble polymer compound as main components, and produces a non-crosslinked type water-insoluble compound in the presence of an acid.
[0012]
Examples of the heterocyclic alcohol used in the present invention include 1,4-dioxane-2,3-diol, 5-methyl-1,4-dioxane-2,3-diol, and 5,6-dimethyl-1,4. -Dioxanediols, such as dioxane-2,3-diol, are mentioned. In addition to the dioxanediol, there is no limitation as long as the alcohol undergoes a dehydration reaction in the presence of an acid and changes from water-soluble to water-insoluble. These alcohols can be used alone or in combination of two or more.
[0013]
Desirable water-soluble polymer compounds used in the present invention are polyvinyl alcohol, water-soluble cellulose ether, polyacrylic acid, polyvinyl acetal, polyvinyl pyrrolidone, polyethyleneimine, polyethylene oxide, styrene-maleic anhydride copolymer, polyvinylamine. , Polyallylamine, and one or a mixture of two or more water-soluble resins containing an oxazoline group. In addition to the water-soluble polymer compound, there is no particular limitation as long as it is a water-soluble polymer compound that is a copolymer of two or more of the water-soluble polymer compounds.
[0014]
The blending ratio of the heterocyclic alcohol and the water-soluble polymer compound is appropriately selected. The weight ratio is the former: the latter = 1: 100 to 1: 1, particularly 1:10 to 1: 2. It is preferable to do. If the proportion of the heterocyclic alcohol is too small, the water or alcohol insoluble layer may not be formed. If the ratio of the heterocyclic alcohol is too large, the storage stability of the coating material composition itself may be inferior, or the pattern itself may be deformed by causing intermixing with the resist pattern.
[0015]
The fine pattern forming material is used after being dissolved in water and / or a hydrophilic organic solvent. In this case, the concentration of the fine pattern forming material is appropriately selected, and may be adjusted so that a layer having a desired film thickness can be easily formed by a method such as spin coating.
[0016]
Here, the solvent is not particularly limited as long as it does not dissolve the resist pattern and dissolves the water-soluble polymer as a binder and the heterocyclic alcohol. Examples of the solvent include pure water, a mixed solvent of pure water and alcohol such as methanol, ethanol and isopropyl alcohol, a mixed solvent of pure water and a water-soluble organic solvent such as γ-butyrolactone or N-methylpyrrolidone, pure water and alcohol, and the like. A mixed solvent such as γ-butyrolactone or N-methylpyrrolidone can be used.
[0017]
Note that a water-soluble plasticizer such as ethylene glycol can be added to the material. Similarly, a water-soluble surfactant such as Fluorard manufactured by 3M may be added to improve the film formability.
[0018]
The fine pattern forming method and the semiconductor device manufacturing method of the present invention both use the fine pattern forming material, and the fine pattern forming material is provided on the side wall (side wall of the line) of the resist pattern capable of supplying acid. The insolubilized layer is formed to narrow the space portion of the resist pattern.
[0019]
Specifically, the method for forming a fine plating pattern of the present invention includes a step of forming a resist pattern capable of supplying an acid on a core substrate of a conductor, and using the fine pattern forming material as a coating material. Forming a coating material layer that does not dissolve the resist pattern on the resist pattern and insolubilizes in water or an alcoholic aqueous solution in the presence of an acid; and water or water at an interface portion between the resist pattern and the coating material layer. A process step of forming an insolubilized layer with respect to the aqueous alcohol solution, and a step of dissolving the water or alcohol aqueous solution soluble portion of the coating material layer without dissolving the resist pattern to form an insolubilized film with respect to water or the alcohol aqueous solution on the resist Then, using this pattern as a mask, the conductor pattern is formed by electrolytic plating or electroless plating. The chromatography down and a step of depositing form.
[0020]
The method for manufacturing a semiconductor device of the present invention includes a step of forming a resist pattern capable of supplying an acid on a semiconductor substrate, and using the fine pattern forming material as a coating material. The resist pattern is formed on the resist pattern. Forming a coating material layer that does not dissolve in water and insolubilizes in water or an alcoholic aqueous solution in the presence of an acid, and forms an insolubilizing layer in water or an alcohol aqueous solution at the interface between the resist pattern and the coating material layer And a step of dissolving the water or alcohol aqueous solution soluble portion of the coating material layer without dissolving the resist pattern to form an insolubilized film against water or an alcohol aqueous solution on the resist, and using this pattern as a mask. Etching the semiconductor substrate.
[0021]
Here, as a core substrate of a conductor used in forming a fine plating pattern, a known material is used, and for example, iron, nickel, cobalt, or an alloy thereof, copper, gold, or the like can be used. In addition, a known semiconductor substrate such as a silicone substrate is used as a semiconductor substrate used in manufacturing a semiconductor device.
[0022]
In the present invention, first, a resist pattern is formed using a resist composition that supplies acid to the substrate by exposure or heating.
[0023]
As a resist composition capable of supplying an acid that can be used in the method for forming a fine plating pattern or the method for manufacturing a semiconductor device of the present invention, it is well known as a resist base polymer that is conventionally used. Mainly a chemically amplified resist composition composed of a composition mainly composed of a polymer such as polyvinylphenol having an acid labile group introduced therein and an acid generator, a cresol-novolak resin, and a naphthoquinonediazide photosensitizer. For example, a resist composition in which an acid generator is mixed with a chemically changing resist composition composed of the composition to be used can be used.
[0024]
The resist composition that can be used in the present invention is a resist composition that generates an acid upon exposure or heating. The acid generated by this exposure or heating serves as a catalyst for intramolecular dehydration reaction of the heterocyclic alcohol in the water-soluble coating material of the present invention, and produces a non-crosslinked and water-insoluble type dehydration product, which is a resist. It is formed as an insoluble coating film that covers the outer wall (outer wall of the line).
[0025]
As a method of forming a resist pattern using the resist composition, a general resist process that is usually used can be applied. That is, a light source applied to the resist composition such as g-line, i-line, deep-UV, electron beam, and X-ray after applying a resist on a substrate by spin coating or the like and then pre-baking (70 to 130 ° C.). And, if necessary, post-exposure baking (60 to 120 ° C.) is performed. Next, development is performed using a tetramethylammonium hydroxide aqueous solution or the like. The thickness of the resist film is not particularly limited, but can be about 1 to 20 μm.
[0026]
Next, a coating material that does not dissolve the resist pattern and is insolubilized in water or an alcoholic aqueous solution due to the presence of an acid, that is, the fine pattern forming material is applied onto a substrate patterned with the resist composition. . The method for applying the coating material is not particularly limited as long as it can be uniformly applied onto the resist layer, and can be applied by a spray coating method, a spin coating method, a dip method, or the like. After this coating material is applied, pre-baking (preferably 60 to 100 ° C.) is performed as necessary to form a coating material layer.
[0027]
The thickness of the coating material layer is not particularly limited, but is preferably 0.2 to 2 μm, particularly preferably 0.3 to 1 μm.
[0028]
After forming the coating material layer in this way, when an acid is supplied from the resist layer by heating to form an insolubilized film, the resist pattern on the substrate and the coating material layer are preferably heated at 100 to 150 ° C. Processing (hereinafter, this process is referred to as mixing baking), the acid supply from the resist layer is promoted, and an intramolecular dehydration reaction of the heterocyclic alcohol in the coating material is generated at the interface with the coating material layer. In this case, the mixing baking temperature and time are 100 to 150 ° C. and 60 to 200 sec. However, it can be set appropriately depending on the type of resist composition used and the required thickness of the coating material layer.
[0029]
Next, using water or a lower alcohol aqueous solution, the coating material layer not participating in the intramolecular dehydration reaction is removed to obtain a resist pattern with an insolubilized layer on the outer wall. With the above processing, it is possible to obtain a pattern in which the space width of the line & space pattern or isolated pattern is reduced. Thus, in the fine pattern forming method described above, acid is supplied from the resist layer to the coating material by mixing baking.
[0030]
On the other hand, when supplying the acid by exposure, the steps from patterning the resist composition to applying and forming the coating material are the same as those described above. In this method, instead of the next heat treatment step, that is, mixing baking, an acid is supplied again from the resist layer by performing exposure again. The light source that can be used at this time is not particularly limited as long as it is the same as the light source used for patterning the resist composition and generates an acid upon exposure.
[0031]
Further, if necessary, mixing baking (preferably 100 to 150 ° C.) is performed. Thus, the supply of acid from the resist layer to the coating material layer is promoted, and an intramolecular dehydration reaction of the heterocyclic alcohol in the coating material is generated at the interface with the coating material layer. In this case, the mixing baking temperature and time are 100 to 150 ° C. and 60 to 200 sec. Preferably, it can be set appropriately depending on the type of resist material used and the required thickness of the coating material layer. Next, in the same manner, the coating material layer not participating in the intramolecular dehydration reaction is removed using water or a lower alcohol aqueous solution to obtain a resist pattern with an insolubilized layer on the outer wall.
[0032]
After forming the insolubilized film as described above, when forming a fine plating pattern, using the resist pattern as a mask, a conductive pattern is deposited by an electrolytic plating method or an electroless plating method by a conventional method, The resist pattern is removed. Examples of electrolytic plating and electroless plating include electrolytic copper plating, electroless copper plating, electrolytic iron-nickel plating, and electrolytic gold plating, and plating can be performed using a known plating bath and plating conditions.
[0033]
On the other hand, in the case of manufacturing a semiconductor device, the resist pattern is removed after the semiconductor substrate is etched according to a conventional method using the resist pattern on which the insolubilized film is formed as a mask.
[0034]
【Example】
EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example.
[0035]
[Resist pattern formation example 1]
As a resist composition, poly- (p-hydroxystyrene) (Mw = 10500, Mw / Mn = 1.03) as a base polymer (35 parts by weight) introduced with 12 mol% of tert-butoxycarbonyloxy group, as an acid generator An excimer laser chemically amplified positive resist composed of diphenyldiazomethane (1.5 parts by weight) and propylene glycol monomethyl ether acetate (65 parts by weight) as a solvent was prepared. Next, this is applied onto a substrate obtained by sputtering an Fe film on a 6-inch silicon wafer using a spinner, and prebaked on a hot plate at 120 ° C./120 seconds to form a resist film having a thickness of 6.0 μm. After exposure using a KrF excimer laser stepper (NSR-2005Ex8A manufactured by Nikon, NA = 0.5), post-exposure baking at 100 ° C./120 seconds, development with 2.38% tetraammonium hydroxide aqueous solution, pure Water rinsing was performed to obtain a 0.45 μm line & space pattern and a 0.45 μm isolated space pattern.
[0036]
[Resist pattern formation example 2]
A base polymer (12 parts by weight) obtained by introducing 15 mol% of tetrahydropyranyl groups as acid labile groups into poly- (p-hydroxystyrene) (Mw = 10500, Mw / Mn = 1.03) as a resist composition, acid An excimer laser chemically amplified positive resist composed of diphenyliodonium trifluoromethanesulfonate (0.7 parts by weight) as a generator and propylene glycol monomethyl ether acetate (88 parts by weight) as a solvent was prepared. Next, this was coated on a 6-inch silicon wafer using a spinner, pre-baked on a hot plate at 120 ° C./120 seconds to form a resist film having a thickness of 1.0 μm, and a KrF excimer laser stepper (Nikon) NSR-2005Ex8A manufactured by NSR-2005, NA = 0.5), post-exposure bake at 100 ° C./120 seconds, development with 2.38% tetraammonium hydroxide aqueous solution, pure water rinse, 0.30 μm A line & space pattern, 0.30 μm isolated space pattern was obtained.
[0037]
[Resist pattern formation example 3]
As a resist composition, a novolak resin (36 parts by weight) in which 8 mol% of the hydroxyl atoms of the hydroxyl group of m, p-cresol novolak resin (Mw = 7,900) are substituted with 1,2 naphthoquinone diadsulfonyl ester group, acid An i-line chemical change positive resist composed of 2,4,6-tris (trichloromethyl) -1,3,5-triazine (2 parts by weight) as a generator and ethyl lactate (62 parts by weight) as a solvent was prepared. did. Next, this is coated on a 6-inch silicon wafer on a substrate obtained by sputtering a Ni film using a spinner, and prebaked on a hot plate at 100 ° C./120 seconds to form a resist film having a thickness of 6.0 μm. Then, after exposure using an i-line stepper (Nikon NSR-1755i7, NA = 0.5), development and pure water rinsing were performed, and a 0.5 μm line was formed on a substrate obtained by sputtering a Ni film on a 6-inch silicon wafer. & Space pattern, 0.5 μm isolated space pattern was obtained.
Next, an example of a water-soluble fine pattern forming material that generates a non-cross-linked water-insoluble compound in the presence of an acid will be described.
[0038]
[Example 1]
Polyvinyl acetal resin 10 g, pure water 90 g and 1,4-dioxane-2,3-diol 3 g are added as a water-soluble fine pattern forming material that generates a non-crosslinked type water-insoluble compound in the presence of an acid. The mixture was stirred for an hour to obtain about 3% 1,4-dioxane-2,3-diol aqueous solution.
[0039]
[Example 2]
As a water-soluble fine pattern forming material that produces a non-crosslinked type water-insoluble compound in the presence of an acid, 5 g of hydroxypropylmethylcellulose, 95 g of pure water and 3 g of 5-methyl-1,4-dioxane-2,3-diol were added. The mixture was stirred and mixed at room temperature for 6 hours to obtain an aqueous solution of about 3% 5-methyl-1,4-dioxane-2,3-diol.
[0040]
[Example 3]
As a water-soluble fine pattern forming material that generates a non-crosslinked type water-insoluble compound in the presence of an acid, 10 g of polyvinyl alcohol having a saponification degree of 88 mol%, 80 g of pure water, 10 g of isopropyl alcohol, and 5,6-dimethyl-1,4 -2 g of dioxane-2,3-diol was added and mixed with stirring at room temperature for 6 hours to obtain an aqueous solution of about 2% 5,6-dimethyl-1,4-dioxane-2,3-diol.
Next, an example of a fine resist pattern forming method obtained by supplying an acid from the resist layer to the coating material will be described.
[0041]
[Example 4]
The coating material obtained in Example 1 was spin-coated at 3000 rpm on the resist pattern on the substrate obtained by sputtering the Fe film obtained in Resist Pattern Formation Example 1, and then prebaked at 80 ° C./90 sec. To form a coating material layer. Next, mixing bake 110 ° C./120 sec. After the intramolecular dehydration reaction of 1,4-dioxane-2,3-diol in the coating material was allowed to proceed, 50 sec. The material layer of the unreacted part was removed with a pure water paddle. Subsequently, post bake 110 ° C./120 sec. To fix the coating material layer. As a result of observation with an electron microscope, a coating material layer of about 0.04 μm was formed, and the 0.45 μm line & space pattern and the 0.45 μm isolated space pattern were both 0.38 μm space patterns. Next, wet etching was performed with a 3% sulfuric acid aqueous solution, immersion in an iron plating solution was performed and electroplating was performed for a predetermined time, and then the resist was stripped with a stripping solution to obtain a plating pattern.
[0042]
[Example 5]
The coating material obtained in Example 2 was spin-coated at 3000 rpm on the resist pattern on the silicon substrate obtained in Resist Pattern Formation Example 2, and then prebaked at 90 ° C./90 sec. To form a coating material layer. Next, mixing bake 110 ° C./120 sec. After the intramolecular dehydration reaction of 5-methyl-1,4-dioxane-2,3-diol in the coating material was allowed to proceed, 50 sec. Of 5% isopropyl alcohol followed by 50 sec. The material layer of the unreacted part was removed with a pure water paddle. Subsequently, post bake 110 ° C./120 sec. To fix the coating material layer. As a result of observation with an electron microscope, a coating material layer of 0.03 μm was formed, and the 0.3 μm line & space pattern and the 0.3 μm isolated space pattern were both 0.24 μm space patterns. Next, etching was performed by a dry etching method using the obtained pattern as a mask to etch the underlying plate, and then the resist was stripped with a stripping solution to obtain an etching pattern.
[0043]
[Example 6]
The coating material obtained in Example 3 was spin-coated at 3000 rpm on the resist pattern on the substrate obtained by sputtering the Fe film obtained in Resist Pattern Formation Example 1, and then prebaked at 85 ° C./90 sec. To form a coating material layer. Next, after exposing the entire surface using a mask aligner (PLA600F manufactured by Canon), mixing baking was performed at 110 ° C./120 sec. And the intramolecular dehydration reaction of 5,6-dimethyl-1,4-dioxane-2,3-diol in the coating material was allowed to proceed, followed by 50 sec. Of 5% isopropyl alcohol followed by 50 sec. The material layer of the unreacted part was removed with a pure water paddle. Subsequently, post bake 110 ° C./120 sec. To fix the coating material layer. As a result of observation with an electron microscope, a coating material layer of 0.05 μm was formed, and the 0.45 μm line & space pattern and the 0.45 μm isolated space pattern were both 0.35 μm space patterns. Next, wet etching was performed with a 3% sulfuric acid aqueous solution, immersion in an iron plating solution was performed and electroplating was performed for a predetermined time, and then the resist was stripped with a stripping solution to obtain a plating pattern.
[0044]
[Example 7]
The coating material obtained in Example 3 was spin-coated at 3000 rpm on the resist pattern on the substrate on which the Ni film was sputtered obtained in Resist Pattern Formation Example 3, and then prebaked at 90 ° C./90 sec. To form a coating material layer. Next, after exposing the entire surface using a mask aligner (PLA600F manufactured by Canon), mixing baking was performed at 110 ° C./120 sec. And the intramolecular dehydration reaction of 5,6-dimethyl-1,4-dioxane-2,3-diol in the coating material was allowed to proceed, followed by 50 sec. Of 5% isopropyl alcohol followed by 50 sec. The material layer of the unreacted part was removed with a pure water paddle. Subsequently, post bake 110 ° C./120 sec. To fix the coating material layer. As a result of observation with an electron microscope, a coating material layer of 0.03 μm was formed, and the 0.5 μm line & space pattern and the 0.5 μm isolated space pattern were both 0.44 μm space patterns. Next, wet etching was performed with a 3% aqueous sulfuric acid solution, and the substrate was immersed in an electroless Ni plating solution and subjected to electroless plating at a predetermined temperature for a predetermined time, and then the release resist was peeled off to obtain a plating pattern.
[0045]
[Comparative Example 1]
As a water-soluble fine pattern forming material that generates a water-insoluble compound in a crosslinked form in the presence of an acid, 10 g of polyvinyl alcohol having a saponification degree of 88 mol%, 80 g of pure water, 5 g of isopropyl alcohol, and commercially available melamine-based crosslinking agent Cymel 370 5 g) was added and stirred at room temperature for 6 hours to obtain an approximately 5% melamine aqueous solution.
[0046]
[Comparative Example 2]
As a water-soluble fine pattern forming material that generates a cross-linked water-insoluble compound in the presence of an acid, 10 g of polyvinyl acetal, 80 g of pure water, 10 g of isopropyl alcohol and 10 g of tetrahydroxymethylglycoluril are added and mixed with stirring at room temperature for 6 hours. About 10% tetrahydroxymethylglycoluril aqueous solution was obtained.
[0047]
The water-soluble fine pattern forming material obtained in Examples 1 to 3 and producing the water-insoluble compound in a non-crosslinked type by the presence of the acid of the present invention and the materials of Comparative Examples 1 and 2 at 30 ° C. As a result of the storage stability test, the materials of Examples 1 to 3 did not change for at least 3 months, but the material of Comparative Example 1 was about 8 days, and the material of Comparative Example 2 was about 20 days. Gelled.
[0048]
【The invention's effect】
The fine pattern forming material of the present invention does not generate intermixing with a resist pattern layer capable of supplying an acid, and can form a fine space pattern with certainty, thereby forming a fine plating pattern and a semiconductor device. This fine pattern forming material is preferably used and has excellent storage stability.

Claims (5)

A fine pattern forming material comprising a heterocyclic alcohol and a water-soluble polymer compound as main components, and a non-crosslinked type water-insoluble compound is formed in the presence of an acid. The fine pattern forming material according to claim 1, wherein the heterocyclic alcohol is dioxanediol. Water-soluble polymer compound is polyvinyl alcohol, water-soluble cellulose ether, polyacrylic acid, polyvinyl acetal, polyvinylpyrrolidone, polyethyleneimine, polyethylene oxide, styrene-maleic anhydride copolymer, polyvinylamine, polyallylamine, oxazoline group-containing water The fine pattern forming material according to claim 1, which is one or a mixture of two or more selected from a functional resin. A step of forming a resist pattern capable of supplying an acid on a core substrate of a conductor, and a fine pattern forming material according to claim 1, 2 or 3, wherein the resist pattern is not dissolved on the resist pattern. And a step of forming a coating material layer insolubilized in water or an alcoholic aqueous solution due to the presence of an acid, and a processing step of forming an insolubilizing layer in water or an alcohol aqueous solution at an interface portion between the resist pattern and the coating material layer; , Dissolving the water or alcohol aqueous solution soluble part of the coating material layer without dissolving the resist pattern, and forming an insolubilized film against water or alcohol aqueous solution on the resist, and using this pattern as a mask, an electroplating method or Including a step of depositing and forming a conductor pattern by electroless plating. Fine plating pattern forming method that. A step of forming a resist pattern capable of supplying an acid on a semiconductor substrate, and using the fine pattern forming material according to claim 1, 2, or 3, without dissolving the resist pattern on the resist pattern, And a step of forming a coating material layer that is insolubilized in water or an alcoholic aqueous solution due to the presence of an acid, and a treatment step of forming an insolubilized layer in water or an alcohol aqueous solution at the interface portion between the resist pattern and the coating material layer; Dissolving the water or alcohol aqueous solution soluble portion of the coating material layer without dissolving the resist pattern, and forming an insolubilized film against the water or alcohol aqueous solution on the resist; and using the pattern as a mask, the semiconductor substrate And a step of etching the semiconductor device.