JP4260305B2 - Film forming method and vacuum film forming apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
An object of the present invention is to provide a film forming method and a vacuum film forming apparatus for forming a film on a surface of a glass substrate or plastic by vacuum film formation.
[0002]
[Prior art]
When forming a film by vacuum film formation such as vacuum deposition or ion plating, the film formation speed, the flow rate of the reaction gas, the temperature of the substrate, etc. are set so that the formed film satisfies the desired physical characteristics. Film conditions are controlled.
[0003]
Here, there is a specific resistance of the film as an important physical characteristic affecting the characteristics of the film. This specific resistance is an important characteristic particularly in a film used for a display such as a liquid crystal.
[0004]
[Problems to be solved by the invention]
By the way, in recent years, it has been demanded that the specific resistance of the film be further reduced. In the film used for a display such as a liquid crystal, the specific resistance is particularly reduced, and the film having the target specific resistance with high accuracy is used. It is required to do.
[0005]
However, even when control is performed so as to set and maintain a predetermined film forming condition as a target when forming the film, the state in which the film is formed is not stable due to sequential variations. Therefore, the physical properties of the film vary at each point in the film formation process, and it is impossible to form a film with a target specific resistance with high accuracy, and to form a film with a small specific resistance. There was also a limit.
[0006]
Therefore, the present invention can form a film having a specific resistance with high accuracy and a film having a small specific resistance, and a vacuum film forming method capable of forming the film. An object is to provide an apparatus.
[0007]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the present invention provides the formation of a film by sequentially depositing the raw material by vacuum film formation,
In the process of forming the film, the resistance value and film thickness of the deposited film are detected at one time and another time, and the resistance value and film thickness of the film at one time and the film at another time are detected. By calculating based on the resistance value and film thickness of the film, the specific resistance of the film deposited between one time and another time is obtained, and based on the obtained specific resistance, The film forming conditions are controlled so as to satisfy (Claim 1).
[0008]
According to the present invention, in the process of forming the film, the specific resistance of the deposited film itself is directly obtained, and the film forming conditions are controlled based on the obtained specific resistance. In addition, it is possible to obtain a film having a small specific resistance. Further, since the specific resistance of the film is obtained every time between one time and another time, the film forming conditions can be controlled more precisely by closely corresponding to the state of the film every time.
[0010]
Then, the time interval between the one time and the other time is 60 seconds or less, it is possible to obtain the specific resistance for each said time interval (claim 2). As a result, the deviation of the specific resistance of the film from the target value can be detected quickly, and the target film can be obtained with higher accuracy by quickly controlling the film forming conditions based on the detection.
[0011]
In addition, the coating can be formed by heating the substrate on which the coating is deposited (Claim 3 ). Thereby, it is possible to form a film having a smaller specific resistance.
[0012]
Then, the film formation conditions and the control may include at least one deposition rate, the flow rate of the reaction gas (claim 4).
[0013]
In addition, the formation of the film is to form a plasma,
The deposition conditions and the control may also include plasma power for forming the plasma (claim 5).
[0014]
In addition, a vacuum film forming apparatus that forms a film by sequentially depositing raw materials by vacuum film formation,
A film thickness detecting means capable of detecting the film thickness of the deposited film, a resistance detecting means capable of detecting the resistance value of the deposited film, and a control device for controlling the film forming conditions;
The control device detects the film thickness detected by the film thickness detecting means in one time and the resistance value of the film detected by the resistance detecting means, and detected by the film thickness detecting means at another time. Based on the film thickness of the film and the resistance value of the film detected by the resistance detection means, the calculation means for obtaining the specific resistance of the film deposited between one time and another time,
By controlling the film forming conditions on the basis of the specific resistance of the coating obtained by the calculating means it can be configured to form a specific resistance of coating a target (claim 6).
[0015]
Then, for such a vacuum deposition apparatus, wherein not more than 60 seconds the time interval between one time and another time, can be configured to determine the specific resistance for each said time interval (claim 7) .
[0016]
Further, in the vacuum deposition apparatus, as the film formation conditions are controlled, it is possible to include at least one deposition rate, the flow rate of the reaction gas (claim 8).
[0017]
Further, the vacuum film forming apparatus shall form a film by forming plasma,
Including the plasma output for forming the plasma in the controlled film formation conditions,
The resistance detection means may include a resistance detector for detecting a resistance value of the deposited film, and a Faraday cup made of a conductive material surrounding the resistance detector. Item 9 ).
[0018]
Further, the resistance value detected by the resistance detection body, so as to be transmitted through a pair of signal lines as signal can be provided a filter to at least one of the pair of signal lines (claim 10). Thereby, unnecessary noise can be removed from the resistance value signal transmitted from the resistance detector, and an error in detecting the resistance value can be prevented.
[0019]
It is also possible to provide a filter in both of said pair of signal lines (claim 11). As a result, it is possible to reliably remove noise from the resistance value signal transmitted from the resistance detector, and it is possible to more reliably prevent an error in detecting the resistance value.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention will be described with reference to FIGS.
[0023]
FIG. 1 is a schematic diagram of a vacuum film forming apparatus according to an embodiment of the present invention. FIG. 2 is a diagram showing in detail the periphery of the vacuum chamber 10 of the vacuum film forming apparatus. The vacuum film forming apparatus shown in FIGS. 1 and 2 is configured to be able to form a film based on ion plating, which is one of the vacuum film forming methods, and is disclosed in Japanese Patent Publication No. 1-48347. This is an apparatus based on the ion plating method. That is, it is based on a so-called gasless ion plating method in which a film can be formed by converting a raw material into plasma in the vacuum chamber 10 without using an inert gas such as Ar (argon). .
[0024]
In the vacuum film-forming apparatus shown in FIGS. 1 and 2, the film is formed by depositing the plasma-formed source material on the substrate 15 in the vacuum chamber 10. Various film forming conditions for forming the film are controlled by the control device 50.
[0025]
The vacuum chamber 10 is evacuated by a vacuum pump (not shown) or the like so that the inside of the vacuum chamber 10 can have a required degree of vacuum. Further, a reactive gas such as oxygen gas or nitrogen gas can be introduced into the vacuum chamber 10. The flow rate (pressure) of the reaction gas introduced into the chamber 10 can be adjusted by the flow rate controller 9.
[0026]
In the vacuum chamber 10, an evaporation source 11 for evaporating the raw material of the coating is disposed. As the evaporation source 11, a boat 12 in which the raw material 8 is stored is disposed, and a filament 13 is wound around the boat 12. The filament 13 is connected to a heating power source 14, and the raw material 8 accommodated in the boat 12 can be evaporated into the chamber 10. Then, by increasing the output of the power source 14, the amount of evaporation of the raw material per unit time can be increased, thereby increasing the film formation rate for depositing the film on the substrate 15. On the other hand, by lowering the output of the power source 14, the evaporation amount of the raw material can be reduced, and the film formation rate can be lowered.
[0027]
As the evaporation source 11, a source material heated by an electron beam and evaporated can be used. In such a case, the amount of evaporation of the source material can be increased by increasing the output of the electron beam, and the amount of evaporation of the source material can be decreased by reducing the output.
[0028]
In the vacuum chamber 10, a substrate holder 16 to which the substrate 15 is attached is supported by a support member 18 via a plate-like insulating member 17. The substrate holder 16 and the support member 18 sandwich the plate-like insulating member 17, and a capacitor is substantially formed.
[0029]
The substrate holder 16 is rotated by a motor 19 so that a film can be formed while rotating the substrate 15. The substrate holder 16 includes a heater (not shown) so that the substrate 15 can be heated.
[0030]
The substrate holder 16 is applied with a voltage from a high frequency power supply (RF) 21 and a direct current power supply (DC) 22 through the contact 20. The contact 20 and the high frequency power source 21 are connected via a DC blocking capacitor 23 and a matching box (MN) 24. This matching box 24 is a well-known one comprising a variable capacitor and a choke coil.
[0031]
The contact 20 and the DC power source 22 are connected via a high-frequency blocking choke coil 25 so that the substrate holder 16 side becomes a negative electrode. In this example, the capacitor 29 is provided such that one terminal is connected between the DC power source 22 and the high frequency blocking choke coil 25 and the other terminal is grounded. Of the two output ends of the high frequency power supply 21 and the DC power supply 22, the other end side with respect to the substrate holder 16 side is grounded. In this example, the vacuum chamber 10 is formed of a conductor and is grounded.
[0032]
The voltages of the high-frequency power source 21 and the DC power source 22 are applied between the surface of the substrate 15 attached to the substrate holder 16 and the chamber 10, and the same voltage is applied between the substrate holder 16 and the support member 18. Applied. In this way, the electric power from the high frequency power source 21 and the DC power source 22 is supplied into the chamber 10 as a plasma output for forming plasma.
[0033]
When the variable capacitor of the matching box 24 is appropriately adjusted, the impedance in the chamber 10 is caused by the action of the capacitor constituted by the substrate holder 16, the plate-like insulating member 17 and the support member 18, and the circuit elements of the matching box 24. And the impedance of the high-frequency power source 21 match, and a stable high-frequency electric field is formed in the chamber 10.
[0034]
In addition, a crystal resonator monitor 26 is disposed in the vacuum chamber 10. This crystal oscillator monitor 26 constitutes a film thickness detecting means for detecting the film thickness of the film deposited on the substrate 15, and detects the film thickness on the substrate 15 through the film thickness deposited on the crystal oscillator monitor 26. I am doing so. The film thickness deposited on the crystal oscillator monitor 26 is detected by the film thickness monitor unit 27.
[0035]
A resistance measuring device 31 is installed in the vacuum chamber 10. The resistance measuring device 31 constitutes a resistance detecting means for detecting the resistance value of the film deposited on the substrate 15. The resistance measuring device 31 will be described in detail with reference to FIG.
[0036]
FIG. 3A is a diagram showing the internal structure of the resistance measuring device 31. FIG. 3B is a view taken along the line III-III in FIG.
[0037]
Inside the resistance measuring device 31, a resistance measuring element 35 as a resistance detector is attached to a support 33 by a holder 34. As shown in FIG. 3C, the resistance measuring element 35 has a configuration in which glass electrodes 38 are provided on both side portions excluding the central portion of the glass substrate 37. The glass electrode 38 can be formed of copper (Cu) or gold (Au), and it is desirable that the vertical / horizontal ratio of the glass electrode 38 is 1: 1.
[0038]
A film is deposited on the surface of the resistance measuring element 35 inside the resistance measuring device 31. The resistance value of the film deposited on the substrate 15 is detected through detection of the resistance value of the film deposited on the resistance measuring element 35. The detection of the resistance value by the resistance measuring element 35 is detected as an area resistance value.
[0039]
As shown in FIG. 4, the glass electrodes 38, 38 of the glass substrate 37 are each sandwiched by clips 39, and the clips 39 are each paired with a pair of lead wires 32 shown in FIG. , 32. The resistance value of the film deposited on the resistance measuring element 35 is detected through the lead wires 32 and 32. The resistance value is transmitted as a detection signal to the resistance monitor unit 43 via the pair of signal lines 36 and 36 drawn from the lead wires 32 and 32.
[0040]
Further, the resistance measuring device 31 is covered with a Faraday cup 40 made of a conductive material on the outside. Thereby, the influence of noise caused by electromagnetic waves radiated from the plasma in the chamber 10 on the inside of the resistance measuring device 31 is reduced, and an error in detecting the resistance value can be prevented.
[0041]
The lower part of the Faraday cup 40 is covered with a shield board 41. An opening 42 is formed in the central portion of the shield board 41, and the raw material is guided to the surface of the resistance measuring element 35 inside the resistance measuring device 31 through the opening 42.
[0042]
When the opening diameter of the shield board 41 is about 10 mmφ, the resistance measuring element 35 can be provided at a position about 10 mm inside the position of the shield board 41.
[0043]
A circuit configuration between the resistance measuring device 31 and the resistance monitoring unit 43 will be described with reference to FIG. As shown in FIG. 5A, it is desirable to provide a filter 47 on at least one of the pair of signal lines 36 and 36. This is because noise superimposed on the detection signal of the resistance value can be cut and detection errors can be prevented.
[0044]
Further, as shown in FIG. 5B, a filter 47 may be provided on both of the pair of signal lines 36 and 36. This is because the noise superimposed on the resistance value detection signal can be cut more reliably and can be detected more accurately. In this case, for example, the Faraday cup 40 is grounded in order to keep the Faraday cup 40 at a constant potential. Further, as shown in FIG. 5B, providing the filters 47 and 47 on both signal lines 36 and 36 is convenient because the resistance measuring device 31 side can be handled independently in terms of the circuit configuration.
[0045]
The filter 47 is selected so that only the frequency component of the detection signal can be passed to the resistance monitor unit 43 and other frequency regions can be cut. That is, if the resistance detection signal is composed of a relatively low frequency component, the high frequency component is cut by using a low pass filter.
[0046]
Next, the control device 50 shown in FIG. 1 will be described. The control device 50 includes a calculator 51 and a controller 52. In the computing unit 51, computation for obtaining the specific resistance of the film deposited on the substrate 15 is performed.
[0047]
In the computing unit 51, the film thickness detected by the film thickness monitoring unit 27 and the resistance value of the coating detected by the resistance monitoring unit 43 are set at a certain time interval Δt ( It is preferably input in 60 seconds or less. Then, the calculator 51 calculates the specific resistance based on the inputted film thickness and the resistance value of the film by the procedure of the specific resistance calculation routine constituting the calculation means stored therein.
[0048]
The calculation process by the specific resistance calculation routine will be described below. The film thickness ΔT deposited between one time t1 and another time t2 (t2 = t1 + Δt) after Δt time is obtained by the equation (1).
[0049]
ΔT = T (t2) −T (t1) (1)
In the equation (1), T (t1) is a film thickness detected at one time t1, and T (t2) is a film thickness detected at another time t2.
[0050]
Next, the sheet resistance value R ^* of the part having the film thickness ΔT is obtained by (2).
[0051]
R ^* = {R (t1)} ² / ΔR−R (t1) (2)
In the equation (2), R (t1) is a sheet resistance value detected at one time. In the equation (2), ΔR represents a decrease in the resistance value R (t2) detected at another time t2 with respect to the resistance value R (t1) detected at one time, and is obtained by the equation (3). It is done.
[0052]
ΔR = R (t1) −R (t2) (3)
The above equation (2) can be derived from the following equation (4) established between R (t1) at t1 and R (t2) after Δt time, and the above equation (3).
[0053]
R (t2) = R ^* · R (t1) / (R ^* + R (t1)) (4)
Next, the specific resistance ρ ^{* of the} film deposited during the Δt time is obtained by equation (5).
[0054]
ρ ^* = ΔT · R ^* (5)
It should be noted that the relationship of the formula (6) is established among the specific resistance ρ, the area resistance R, and the film thickness T when performing the above calculation to obtain the specific resistance ρ from the detected area resistance R and the film thickness T. Based on.
[0055]
ρ = T · R (6)
Then, the specific resistance ρ ^* obtained by the calculator 51 is input to the controller 52. Then, the controller 52 includes a target value [rho _M of the resistivity of the coating which is set in advance, based on comparison of the [rho ^*, to allow the coating of the target value [rho _M, the control of the various film forming conditions Do. The contents of the control by the controller 52 are as follows.
[0056]
The controller 52 controls the output of the heating power supply 14 to control the evaporation amount of the source material per unit time, thereby controlling the film forming speed which is one of the film forming conditions. When it is desired to increase the deposition rate, the evaporation amount of the source material is increased. When it is desired to decrease the deposition rate, the evaporation amount of the source material is decreased.
[0057]
The controller 52 controls the output of the high frequency power source 21 and the DC power source 22 to control the plasma output for forming plasma, which is one of the film forming conditions. The controller 52 controls the flow rate of the reaction gas, which is one of the film forming conditions, by controlling the flow rate controller 9.
[0058]
Further, the control of the film forming conditions by the control device 50 is repeated every Δt time with the time interval Δt (preferably 60 seconds or less) between the one time and the other time as one sampling time. Is called. Thereby, it is possible to quickly detect a deviation from the target value of the specific resistance of the actually deposited film, and to appropriately control the film forming conditions.
[0059]
The control device 50 can be configured by a known computer system that can store the detected film thickness, sheet resistance value, and the like, and that can perform arithmetic processing for obtaining the specific resistance. In addition, the control device 50 has a built-in timer, and can process the times t1 and t2 when data such as film thickness and area resistance value are input together with data such as film thickness and area resistance value. ing.
[0060]
Each data is A / D-converted and D / A-converted according to the data input to the control device 50 from the resistance monitor unit 43 and the film thickness monitor unit 27 and the control by the control device 50. It is like that.
[0061]
According to the vacuum film forming apparatus of the present invention configured as described above, the coating film is formed as follows. The vacuum film forming apparatus is operated according to film forming conditions initially set in the control device 50, and a film is sequentially deposited on the substrate 15 arranged in the chamber 10.
[0062]
Based on the resistance value of the film detected via the resistance measuring device 31 and the film thickness of the film detected via the crystal oscillator monitor 26, the specific resistance ρ ^{* of the} film deposited on the substrate 15 is controlled by the control device 50. It is calculated by. Then, the control device 50 compares the obtained specific resistance ρ ^* with the target value ρ _M, and the film formation conditions are changed and adjusted based on the result, and film formation is performed under the new film formation conditions. . The adjustment of the film forming conditions is repeatedly performed at Δt time intervals to finally form a film having a target film thickness.
[0063]
In this way, in the process of forming the film, the specific resistance of the actually formed film is obtained, and the film formation conditions are changed and adjusted based on the result, so that the specific resistance of the film deposited on the substrate 15 is adjusted. ρ ^* does not deviate more than the target value ρ _M. Thereby, the film of the target specific resistance can be formed with high accuracy. Moreover, a film with a small specific resistance can also be obtained.
[0064]
According to the present invention, even when indium oxide containing tin oxide as an impurity is used as a raw material, which has a large variation in specific resistance in the past, it can be formed with high accuracy into a target specific resistance film.
[0065]
Moreover, the film-forming body having a film formed on the surface, which can be obtained by the present invention, is particularly suitable for an image display. That is, in an image display such as a liquid crystal display, a plasma display, and a field emitter array, a material having a low specific resistance is required to obtain a clear display image.
[0066]
In the above description, the case where a film is formed using plasma has been described by using an example of so-called gasless ion plating. However, according to the resistance detection means of the present invention, high detection is achieved in all methods using plasma. It is possible to detect the resistance with accuracy. In addition, the specific resistance of the film is determined in the process of forming the film according to the present invention, and the film formation conditions are controlled based on the obtained resistance is not limited to the formation of the film by forming plasma. It can also be applied to other vacuum film formation methods such as vacuum deposition.
[0067]
【Example】
Examples of the present invention will be described below.
[0068]
[Example 1]
As Example 1, an ITO film, which is a transparent conductive film for liquid crystal, was formed under the following conditions. The gasless ion plating described above was used for film formation. However, for evaporation of the raw material, an evaporation source using an electron gun was used. Moreover, the glass substrate was used as a board | substrate which forms a film. Other conditions are as follows.
[0069]
Preliminary exhaust vacuum: 1.33 × 10 ⁻³ Pa
Reaction gas type: Oxygen (O ² )
Initial reaction gas pressure: 6.65 × 10 ⁻² Pa
Substrate-evaporation source distance: 20 cm
Substrate temperature: 25 ° C
Initial high frequency power: 300W
Raw material: ITO Sn 5% film formation rate: 0.7 nm / sec
And oxygen gas was changed so that a specific resistance value might become the minimum. As a result, the following film could be obtained.
Film thickness: 150nm
Transmittance: 89% (substrate 1.1mm ^t )
Resistance value: 20Ω / □
Specific resistance: 3.0 × 10 ⁻⁴ Ω · cm
[0070]
[Example 2]
In Example 2, the reaction gas was not used, and the film formation rate was controlled so that the specific resistance value was minimized. Other conditions are the same as in the first embodiment. As a result, the following film could be obtained.
Film thickness: 155nm
Transmittance: 90% (substrate 1.1mm ^t )
Resistance value: 25Ω / □
Specific resistance: 3.88 × 10 ⁻⁴ Ω · cm
[0071]
[Example 3]
As Example 3, film formation was performed by controlling the high-frequency power as the plasma output so that the specific resistance value was minimized. Other conditions are the same as in the first embodiment. As a result, the following film could be obtained.
Film thickness: 150nm
Transmittance: 90% (substrate 1.1mm ^t )
Resistance value: 15Ω / □
Specific resistance: 2.25 × 10 ⁻⁴ Ω · cm
[0072]
[Example 4]
In Example 4, the substrate was heated to a temperature of 250 ° C., and the film was formed by controlling the oxygen gas pressure, the film formation rate, and the high-frequency power so that the specific resistance value was minimized. First, the oxygen gas pressure was adjusted so that the specific resistance was minimized, then the film formation speed and high frequency power were adjusted, and the gas pressure was returned to the adjustment to repeat the film formation at the minimum point. Other conditions are the same as in the first embodiment.
As a result, the following film could be obtained.
Film thickness: 150nm
Transmittance: 88% (Substrate 1.1mm ^t )
Resistance value: 7Ω / □
Specific resistance: 1.05 × 10 ⁻⁴ Ω · cm
[0073]
As can be seen from Examples 1 to 4, it was possible to form a film having a specific resistance smaller than that of the prior art.
[0074]
【The invention's effect】
As described above, according to the present invention, the specific resistance of the film can be obtained directly in the course of film formation, and the film formation conditions can be controlled based on the obtained specific resistance. As a result, it is possible to obtain a film having a target specific resistance with high accuracy and to obtain a film having a small specific resistance.
[Brief description of the drawings]
FIG. 1 is a schematic diagram showing the configuration of a vacuum film forming apparatus.
FIG. 2 is a view showing in detail the periphery of a vacuum chamber.
FIG. 3 is a diagram illustrating a resistance measuring device.
FIG. 4 is a diagram illustrating a state in which a resistance measuring element is held.
FIG. 5 is a configuration example of a circuit that transmits a resistance value signal;
[Explanation of symbols]
8 ... Raw material 9 ... Flow rate controller 10 ... Vacuum chamber 11 ... Evaporation source 12 ... Boat 13 ... Filament 14 ... Heating power supply 15 ... Substrate 16 ... -Board holder 17-Plate-like insulating member 18-Support member 19-Motor 20-Contact 21-High frequency power supply 22-DC power supply 23-DC blocking capacitor 25- ..High-frequency blocking choke coil 26... Crystal resonator monitor 27... Film thickness monitor section 31 .. resistance measuring device 32 .. lead wire 33. ..Resistance measuring element 36 ... Signal line 37 ... Glass substrate 38 ... Glass electrode 39 ... Clip 40 ... Faraday cup 41 ... Shield board 42 ... Opening 43 ... Resistance Monitor unit 47. Motor 50 ... controller 51 ... computing unit 52 ... controller

Claims (11)

A method of forming a film in which raw materials are sequentially deposited by vacuum film formation to form a film,
In the process of forming the film, the resistance value and film thickness of the deposited film are detected at one time and another time, and the resistance value and film thickness of the film at one time and the film at another time are detected. By calculating based on the resistance value and film thickness of the film, the specific resistance of the film deposited between one time and another time is obtained, and the film of the target specific resistance is obtained based on the obtained specific resistance. The film forming method is characterized in that the film forming conditions are controlled.   The method for forming a film according to claim 1, wherein a time interval between the one time and another time is set to 60 seconds or less, and a specific resistance is obtained for each time interval.   The method for forming a film according to claim 1, wherein the film is formed by heating a substrate on which the film is deposited.   4. The method of forming a coating film according to claim 1, wherein the controlled film forming conditions include at least one of a film forming speed and a flow rate of a reactive gas. The film is formed by forming plasma,
The film forming method according to claim 4, wherein the controlled film forming condition includes a plasma output for forming the plasma. A vacuum film forming apparatus for forming a film by sequentially depositing raw materials by vacuum film formation,
A film thickness detecting means capable of detecting the film thickness of the deposited film, a resistance detecting means capable of detecting the resistance value of the deposited film, and a control device for controlling the film forming conditions;
The control device detects the film thickness detected by the film thickness detecting means in one time and the resistance value of the film detected by the resistance detecting means, and detected by the film thickness detecting means at another time. Based on the film thickness of the film and the resistance value of the film detected by the resistance detection means, the calculation means for obtaining the specific resistance of the film deposited between one time and another time,
A vacuum film forming apparatus configured to form a film having a target specific resistance by controlling film forming conditions based on the specific resistance of the film obtained by the computing means.   The vacuum film forming apparatus according to claim 6, wherein a time interval between the one time and another time is set to 60 seconds or less, and a specific resistance is obtained for each time interval.   The vacuum film forming apparatus according to claim 7, wherein the controlled film forming conditions include at least one of a film forming speed and a flow rate of a reactive gas. The vacuum film forming apparatus forms a film by forming plasma,
The controlled film formation conditions include a plasma output for forming the plasma,
The resistance detection means includes a resistance detection body for detecting a resistance value of the deposited film, and a Faraday cup made of a conductive material surrounding the resistance detection body. The vacuum film-forming apparatus as described. The resistance value detected by the resistance detector is transmitted as a signal through a pair of signal lines,
The vacuum film forming apparatus according to claim 9, wherein a filter is provided on at least one of the pair of signal lines.   The vacuum film forming apparatus according to claim 10, wherein a filter is provided on both of the pair of signal lines.

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