JP4259149B2 - Liquid crystal display device, manufacturing method thereof, and electronic apparatus - Google Patents

Description

【００５８】
すなわち、本発明を適用することにより、Ｃ_LCやＣ_TFDを変化させずに、つまり画素６やＴＦＤ素子４のサイズや材料を変化することなく、保持容量Ｃ_Rを変化させることで容量比ｋを向上させることが可能である。
容量比ｋはその値が大きいほど寄生容量Ｃ_TFDの影響を小さくすることができるが、その反面容量比ｋを大きくする、すなわち保持容量Ｃ_Rを増大させると、今度は液晶に対する電圧負荷が高くなる。容量比ｋの値は、望ましくは３〜４程度の値であり、この値を示すように保持容量Ｃ_Rの材料やサイズを決定すればよい。
【００５９】
なお、前記積層体５４の、第１の金属膜５１／絶縁膜５３／第２の金属膜５２という構成はＴＦＤ素子４の構成と同一であるが、前記積層体５４における絶縁膜５３の層厚は200〜400nm程度と、ＴＦＤ素子４の絶縁膜４３の膜厚（約20〜30nm）の約１０倍以上であるから、この積層体５４がダイオードスイッチング特性を有することはない。
【００６０】
以上のように、本実施形態に説明された要領で積層体５４を構成することにより、前記積層体５４は遮光膜であると同時に保持容量として機能し、液晶表示装置の表示品質の向上に重畳的に寄与する。
【００６１】
なお、上述の説明では積層体５４を構成する第１の金属膜５１，第２の金属膜５２はＴＦＤ素子４を形成する工程において同時に形成されているが、積層体５４はＴＦＤ素子４とは異なる工程において形成されてもよい。
また、上述の説明では積層体５４を構成する第１の金属膜５１，第２の金属膜５２，絶縁膜５３はＴＦＤ素子４を構成する第１の金属膜５１，第２の金属膜５２，絶縁膜５３と同一の物質により形成されているが、積層体５４は遮光性を有しかつ保持容量を有する構成であれば、ＴＦＤ素子４と同一の構成である必要はなく、その構成要素を問わない。
【００６２】
＜第３実施形態＞
以下では第３実施形態について説明を行う。
本実施形態においては、係る液晶パネルの電気的構成は第１実施形態と同一である。ゆえにこの説明は省略する。
図１５は本発明の第３実施形態に係る液晶パネル１の画素領域のひとつを、素子基板１０の基板面に対して垂直に見た平面図であり、また図１６は図１５中Ｄ−Ｄ’部分の断面図をそれぞれ示す。本実施形態において上述の２つの実施形態と大きく異なる点は、第１の透明電極１１が画素領域のほぼ全体に広がっている点である。これは、図１６に示されるように、基板上に透明の絶縁層６１を形成することによって、第１の透明電極１１がデータ線３と導通することなく画素領域全体を覆うことができることによる。以下に上記素子基板１０の構成を説明する。
【００６３】
素子基板１０上には第１の金属膜４１、絶縁膜４３、第２の金属膜４２によりデータ線３およびＴＦＤ素子４が形成される。これらの材料および製法は上述の第１実施形態と同様であるため、ここではその説明を省略する。
第２のＴＦＤを構成する第２の金属膜４２と導通するように、導電体６２が形成される。この導電体６２は第２の金属膜４２と同じクロムであり、第２の金属膜４２と同時に形成される。
次に基板上には絶縁層６１が形成される。この絶縁層６１は感光性アクリル樹脂等からなり、上述のＴＦＤ素子４および導電体６２がじゅうぶん被覆される程度の層厚を以て形成される。
【００６４】
前記絶縁層６１上に透明電極である第１の透明電極１１が形成される。その材料および成膜法は第１実施形態にて既に述べた通りである。
この第１の透明電極１１上には、上記導電体６２に接触し、かつ対向基板２０上にある前記傾斜部分と基板面に対し垂直に見たときに重なるようにコンタクトホール６３が設けられている。このコンタクトホール６３を介して第１の透明電極１１は導電体６２およびＴＦＤ素子４と導通することによって、第１の基板と第２の基板間に介在する液晶層に電圧を印加することが可能となる。
【００６５】
続いて、本実施形態に係る素子基板１０の製造プロセスについて説明する。なお、以下の説明に用いる断面図は、上述の図１６と同じ断面を示している。
本実施形態に係る素子基板１０の製造プロセスについては、図８（５）に示された第２の金属膜４２のパターニング工程までは第１実施形態と同様であり、その説明は省略し、これに続く工程から説明を始める。
【００６６】
図１７（１）に示されるように、第２の金属膜４２が一般に用いられているフォトリソグラフィおよびエッチング技術によってパターニングされる。これにより、第１，第２のＴＦＤ素子４ａ，４ｂにおける第２の金属膜４２が離間して形成されるとともに、データ線３の最上層も第２の金属膜４２によって被覆されることになる。図８（６）と異なる点は、遮光膜４０が形成されない点のみである。
【００６７】
第２の金属膜４２のパターニングの後に、同図（２）に示されるように絶縁層６１を形成する。具体的には、例えば絶縁層６１が感光性アクリル樹脂のとき、前記絶縁層６１はスピンコート法等により形成される。絶縁層６１は第１の透明電極１１とデータ線３とを絶縁するために形成されているので、その層厚はデータ線３が十分覆われる程度であればよい。
【００６８】
絶縁層６１が形成されたら、続いて同図（３）に示されるようにコンタクトホール６３を形成する。前記コンタクトホール６３は、例えばドライエッチング等の方法により、次工程で成膜される透明電極１１と導電体６２が導通するように形成される。その後、同図（４）に示されるように透明電極１１が成膜される。
その後図８（７）に示された第１の金属膜４１の不要部分の除去を同様に行い、配向膜１２の成膜およびラビング処理を行う。これらは第１実施例と同様であるため、その説明を省略する。
【００６９】
このような構造を採ることで、当該画素領域にある第１の透明電極１１の面積はデータ線３の位置の影響を受けずに、隣接する画素領域の第１の透明電極１１と接触しない範囲で可能な限り大きくすることができ、開口率が向上する。すなわち当該液晶表示装置のコントラストを高めることができる。
【００７０】
また、上述のように、前記コンタクトホール６３が対向基板２０上にある前記傾斜部分と基板面に対し垂直に見たときに重なるように設けられることで、当該コンタクトホール６３が表示領域上で開口率を下げる要因とならず、かつ、当該傾斜部分の少なくとも一部は前記コンタクトホール６３により遮光されて前述の光漏れを低減するというふたつの効果を同時に有する。
なお、上記導電体６２の形状については、第１の透明電極１１とＴＦＤ素子４とが導通できるだけの大きさがあれば十分なのだが、この導電体６２の形状を前記傾斜部分の一部または全部と一致するように大きく形成してもよい。このようにすることで前記傾斜部分の光漏れを防ぐ遮光領域を増加させることが可能である。
【００７１】
最後に、以上で説明した液晶表示装置１００を搭載した電子機器について説明する。
図１８は液晶表示装置１００を表示部とする携帯電話端末７０の外観図である。同図において携帯電話端末７０は、複数の操作ボタン７１の他、受話口７２，送話口７３と共に、電話番号等の各種情報を表示する表示部として上記液晶表示装置１００を具備している。
また、携帯電話端末以外にも、上記液晶表示装置１００は、コンピュータ、プロジェクタ、デジタルスチルカメラ、ムービーカメラ、車載機器、複写機、オーディオ機器等の各種電子機器の表示部として用いることも可能である。
【００７２】
＜変形例＞
なお、本発明は以下の態様にて実施することも可能である。
上述の第１実施形態および第２実施形態において、遮光膜は前記傾斜部分の全体を覆うように形成されたが、前記傾斜部分の少なくとも一部を覆っていれば、当該部分に関して前述の光漏れを遮る効果を有する。
また、画素領域上の透過表示領域Ｔと反射表示領域Ｒとは、必ずしも前述の通りである必要はなく、その形状は製造可能な範囲において任意である。透過表示領域Ｔと反射表示領域Ｒの面積比についても自由であり、本発明が適用される電子機器の用途に応じて、透過表示モードに重点を置きたければ透過表示領域Ｔの比率を高めればよく、逆に反射表示モードに重点を置きたければ反射表示領域Ｒの比率を高めればよい。
【００７３】
また、第３実施形態の構成において保持容量を付加することも可能である。具体的には、上述の絶縁層６１の上にＩＴＯ等の透明材料からなる容量電極を形成し、前記容量電極の上に第１の透明電極１１を、これらが導通せぬよう第２の絶縁層を間に設けつつ形成する。上述の構成のもと前記容量電極をシール材部分にて走査線電極と導通させれば、前記容量電極とデータ線３との間に保持容量を発生させることができる。
【００７４】
また、上述の各実施形態においては、スイッチング素子としてＴＦＤ（薄膜ダイオード）を備えた液晶パネルを示したが、スイッチング素子の種類はＴＦＤのみに限定されず、例えばＴＦＴ（Thin Film Transistor：薄膜トランジスタ）等をスイッチング素子として用いたアクティブマトリクス方式の液晶パネルにおいても本発明を適用することが可能である。
【図面の簡単な説明】
【図１】 本発明の第１実施形態に係る液晶パネルの電気的構成を示すブロック図である。
【図２】 同実施形態における液晶パネルの斜視図である。
【図３】 図２のＡ−Ａ’部分の断面図である。
【図４】 同実施形態における画素領域のひとつを示した断面図である。
【図５】 同実施形態における画素領域のひとつを示した斜視図である。
【図６】 同実施形態における素子基板上の画素領域のひとつを示した平面図である。
【図７】 図６のＢ−Ｂ’部分の断面図である。
【図８】 同実施形態における素子基板の製造方法を示した図である。
【図９】 同実施形態における素子基板の製造方法を示した図である。
【図１０】 本発明の第２実施形態に係る液晶パネルの電気的構成を示すブロック図である。
【図１１】 同実施形態における液晶パネル１’のシール材部分および隣接する画素領域の平面図である。
【図１２】 図１１のＣ−Ｃ’部分の断面図である。
【図１３】 同実施形態における素子基板の製造方法を示した図である。
【図１４】 同実施形態における素子基板の製造方法を示した図である。
【図１５】 本発明の第３実施形態における素子基板上の画素領域のひとつを示した平面図である。
【図１６】 図１５のＤ−Ｄ’部分の断面図である。
【図１７】 同実施形態における素子基板の製造方法を示した図である。
【図１８】 本発明に係る液晶表示装置を表示部として搭載した電子機器の一例を示す図である。
【符号の説明】
１，１’…液晶パネル、２…走査線、３…データ線、４…ＴＦＤ素子、５…液晶容量、６…画素、９…保持容量、１０…素子基板、１１…第１の透明電極、２０…対向基板、２１…第２の透明電極、２５…膜厚調整層、３０…シール材、３１…導電粒子、３２…液晶、４０…遮光膜、４１…第１の金属膜、４２…第２の金属膜、４３…絶縁膜、４４…絶縁層、５４…積層体、６２…導電体、６３…コンタクトホール、７０…携帯電話端末、１００…液晶表示装置。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a liquid crystal display device, a manufacturing method thereof, and an electronic apparatus using the liquid crystal display device, and more particularly to a transflective liquid crystal display device.
[0002]
[Prior art]
Among various liquid crystal display devices currently used, there is a transflective liquid crystal display device capable of displaying an image in a transmissive display mode and a reflective display mode.
In the transflective liquid crystal display device, one pixel region includes a transmissive display region and a reflective display region. The optical path length of the light passing through the liquid crystal layer is such that the incident light incident from the viewer side surface is reflected from the bottom surface and emitted to the viewer side in the reflective display area, so that the light is incident from the bottom surface as it is. It is about twice as long as the optical path length of the transmissive display area emitted to the screen.
[0003]
The visibility of the liquid crystal display device can be obtained by optimizing the product Δnd (retardation) of the refractive index difference Δn between the major and minor axes of the liquid crystal and the layer thickness d of the liquid crystal layer. In the transflective liquid crystal display device, Has a problem in that the same visibility cannot be obtained because the optical characteristics of both emitted lights are different because they are constituted by display regions having different optical path lengths, that is, layer thicknesses, for the same liquid crystal material.
[0004]
In order to solve the above-mentioned problem, as shown in Patent Document 1, a structure in which the layer thickness is made different between the transmissive display area and the reflective display area has been developed, and thus it is possible to match the retardation in both areas. became.
[0005]
[Patent Document 1]
Japanese Patent Laid-Open No. 11-242226
[0006]
[Problems to be solved by the invention]
However, when this configuration is adopted, the boundary between the transmissive display region and the reflective display region having different layer thicknesses becomes an inclined region having a certain width. In this boundary region, the retardation changes continuously, and since the bottom surface is inclined, the alignment state of the liquid crystal molecules is disturbed, so that light leaks out from this portion, resulting in a decrease in contrast and display quality. .
The present invention has been made under such a background, and an object of the present invention is to provide a transflective liquid crystal display device with improved display quality as compared with the prior art.
[0007]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, a liquid crystal display device according to the present invention includes a first substrate having a first transparent electrode formed on a surface thereof, and a second transparent on a surface facing the first transparent electrode. A second substrate on which an electrode is formed; and a liquid crystal layer held between the first substrate and the second substrate, wherein the second substrate includes the first transparent electrode The pixel area facing the second transparent electrode has a reflective display area, a transmissive display area, and a boundary area between the two display areas, which are distinguished by different thicknesses of the liquid crystal layer. The substrate includes a switching element and a light shielding layer formed by laminating a first metal film, an insulating film, and a second metal film electrically connected to the first transparent electrode. , At least a region on the first substrate and facing the boundary region on the second substrate It is characterized by being formed so as to cover the parts.
[0008]
According to this aspect, the light-shielding layer is formed on the first substrate (element substrate) so as to cover the inclined region on the second substrate (counter substrate). In addition, the light shielding layer is formed in the step of forming the switching element with the material constituting the switching element, so that the light shielding film is formed without changing the manufacturing process. It becomes possible.
[0009]
In addition, the liquid crystal display device according to the present invention includes a first substrate having a first transparent electrode formed on a surface thereof, and a second transparent electrode formed on a surface side facing the first transparent electrode. 2 substrate and a liquid crystal layer held between the first substrate and the second substrate, the second substrate comprising the first transparent electrode and the second transparent electrode. Each of the pixel regions facing each other includes a reflective display region, a transmissive display region, and a boundary region between the two display regions, which are distinguished by different thicknesses of the liquid crystal layer. A switching element formed by laminating a metal film, an insulating film, and a second metal film conductive to the first transparent electrode, and the first metal film as a first capacitor electrode, A storage capacitor formed by using the second metal film as a second capacitor electrode, and the storage capacitor It is characterized by being formed so as to cover at least a portion of the first region be on the substrate facing the boundary region on the second substrate.
[0010]
According to this aspect, since the storage capacitor is formed in parallel with the liquid crystal capacitor, it is possible to reduce the influence of the parasitic capacitance of the switching element, and at the same time, the storage capacitor is provided on the second substrate. By forming on the first substrate so as to cover the inclined portion, the above-described problem of light leakage can be reduced.
[0011]
In addition, the liquid crystal display device according to the present invention includes a first substrate having a first transparent electrode formed on a surface thereof, and a second transparent electrode formed on a surface side facing the first transparent electrode. 2 substrate and a liquid crystal layer held between the first substrate and the second substrate, the second substrate comprising the first transparent electrode and the second transparent electrode. Each of the pixel regions facing each other has a reflective display region, a transmissive display region, and a boundary region between the two display regions, which are distinguished by different layer thicknesses of the liquid crystal layer, and the first substrate includes a data line And a switching element, and an insulating layer that insulates the data line and the switching element from the first transparent electrode, and electrically connects the switching element and the first transparent electrode. And a contact hole formed in the insulating layer and overlapping the contact hole With a metal layer, Overlapping the metal layer The contact hole is formed in at least a part of a region on the second substrate facing the boundary region on the first substrate.
[0012]
According to this aspect, since the second transparent electrode is formed on a plane different from the plane on which the data line and the switching element are formed, the pixel area can be made larger than the conventional one. ,Also, Overlapping the metal layer By forming the contact hole on the first substrate so as to cover the inclined portion on the second substrate, the above-described problem of light leakage can be reduced.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following, as an embodiment of the present invention, a transflective / reflective liquid crystal display device in which a thin film diode (hereinafter referred to as TFD as appropriate) or the like serves as a switching element for a pixel will be described as an example. Do.
In the following drawings, the same portions are denoted by the same reference numerals, and the description thereof is omitted as appropriate. Further, in order to prevent the figure from becoming complicated, illustrations and descriptions of unnecessary parts are omitted as appropriate in the detailed description of each part.
[0014]
<First Embodiment>
FIG. 1 is a block diagram showing an electrical configuration of the liquid crystal panel according to the first embodiment of the present invention. As shown in the figure, the liquid crystal panel 1 is formed with a plurality of scanning lines 2 (common electrodes) extending in the row (X) direction, while a plurality of data lines 3 (segment electrodes) are arranged in columns ( Y) extending in the direction. A pixel 6 including a TFD element 4 and a liquid crystal capacitor 5 is formed at each intersection of the scanning line 2 and the data line 3.
[0015]
The plurality of scanning lines 2 are respectively conductive wires X ₁ , X ₂ , ..., X _m Are connected to an X driver 7 which is a drive circuit, and a plurality of data lines 3 are respectively connected to a lead Y ₁ , Y ₂ , ..., Y _n Is connected to the Y driver 8. Conductor X ₁ , X ₂ , ..., X _m And lead Y ₁ , Y ₂ , ..., Y _n In the case where it is not necessary to distinguish each of them individually, they are denoted as a conducting wire X and a conducting wire Y, respectively.
[0016]
FIG. 2 is a perspective view of the liquid crystal panel 1. In order to facilitate understanding of the figure and the explanation, the observer side is shown below in the figure. As shown in the figure, in the liquid crystal display device 100, an element substrate 10 as a first substrate and a counter substrate 20 as a second substrate that are opposed to each other are bonded together by a sealant 30, and both substrates are sealed. The liquid crystal 32 is enclosed in a region surrounded by the material 30. The sealing material 30 is formed in a substantially rectangular frame shape along the outer periphery of the counter substrate 20. An opening for enclosing the liquid crystal 32 is formed in a part of the sealing material 30, and after the liquid crystal 32 is encapsulated through the opening, the sealing material 33 is sealed.
[0017]
3 is a cross-sectional view taken along the line AA ′ in FIG. In the figure, a first transparent electrode 11, a data line 3, a TFD element 4, a first alignment film 12 and the like are formed on an element substrate 10 which is a first substrate, and a counter substrate which is a second substrate. A second transparent electrode 21, a second alignment film 22, a reflective layer 23, a color filter 24, a film thickness adjusting layer 25, etc. are formed on 20. The second transparent electrode 21 extends in the row direction and functions as the scanning line 2.
The two substrates are bonded together with a sealing material 30, and a liquid crystal 32 is sealed in a space surrounded by the substrate and the sealing material 30.
[0018]
A large number of conductive particles 31 having conductivity are dispersed in the sealing material 30. These conductive particles 31 are, for example, plastic particles subjected to metal plating, and the function of electrically connecting the wirings formed on each of the element substrate 10 and the counter substrate 20 and the cell gap between the two substrates are kept constant. Combined with spacer function.
[0019]
The leading ends of the plurality of conducting wires X form a plurality of conducting portions Xa at the sealing material portion, and the leading ends of the plurality of scanning lines 2 similarly form a plurality of conducting portions 2a at the sealing material portions. The plurality of conducting portions Xa and 2 a are conducted through the conductive particles 31 in the sealing material 30, whereby the plurality of scanning lines 2 are conducted with the X driver 7.
[0020]
Actually, a polarizing plate for polarizing incident light and a retardation plate for compensating for interference colors are attached to the outer surfaces of the element substrate 10 and the counter substrate 20. Since there is no direct relationship with the invention, its illustration and description are omitted. Similarly, the internal configurations of the element substrate 10 and the counter substrate 20 are omitted as appropriate, but necessary portions will be supplemented by detailed descriptions of respective portions described later.
[0021]
By adopting the structure as described above, it becomes possible to mount an IC chip or the like, which has conventionally been required on both substrates, only on one side of the element substrate, and the configuration of the liquid crystal display device 100 is simplified. Thus, the manufacturing efficiency can be improved.
[0022]
FIG. 4 is a cross-sectional view of one of the pixel regions of the liquid crystal panel 1 cut in the X direction. As shown in the figure, the data line 3, the TFD element 4, the first transparent electrode 11, the first alignment film 12 and the like are formed on the element substrate 10, and the reflective layer 23, A color filter 24, a film thickness adjusting layer 25, a second transparent electrode 21, a second alignment film 22 and the like are sequentially formed, and a liquid crystal 32 is sealed between the two substrates. With such a configuration, the liquid crystal panel 1 displays an image by reflecting incident light from outside in the reflective display region R by the reflective layer 23, and displays light from a backlight (not shown) in the transmissive display region T. An image is displayed by light.
[0023]
Further, as is clear from the figure, these pixel regions have different cell gaps in the reflective display region R and the transmissive display region T. The reason for this configuration is that the product Δnd (retardation) of the refractive index difference Δn between the major and minor axes of the liquid crystal 32 interposed between the two substrates and the layer thickness d of the liquid crystal layer is optimal for each display region. This is because the layer thickness d is set so as to be a value, and high visibility is obtained with both the transmissive display light and the reflective display light. In order to adjust the layer thickness d, a film thickness adjusting layer 25 is formed in the reflective display region R.
[0024]
Photolithography is used to form the film thickness adjusting layer. However, due to exposure accuracy and side etching during development, the boundary portion between the transmissive display region T and the reflective display region R is inclined. It will occur. The retardation of the inclined portion is different from both the transmissive display region T and the reflective display region R, and the orientation is disturbed, which causes a display defect. In particular, when the liquid crystal mode is a normally white mode, there is a problem that when the voltage is applied and the screen is to be displayed in black, light leaks from the inclined portion and the contrast of the screen is lowered.
[0025]
FIG. 5 is a perspective view showing the structure of the upper and lower substrates, focusing on one pixel 6 on the liquid crystal panel 1. In the figure, the reflective display region R on the counter substrate 20 is disposed so as to surround the transmissive display region T. Therefore, the above-described inclined portion has two displays when viewed from the observer side in plan view. It exists in a frame shape along the boundary of the region.
At this time, the light shielding film 40 having a frame shape is formed on the element substrate 10 when viewed from the observer side, similarly to the inclined portion. The light shielding film 40 is formed so as to overlap the inclined portion when observed perpendicularly to the substrate surface from the observer side. By the light shielding film 40, incident light from the outside is shielded and does not reach the inclined portion on the counter substrate 20, and transmitted light from the backlight is shielded and does not reach the viewer side. It becomes possible to prevent light leakage from the inclined portion.
[0026]
FIG. 6 is a plan view when one of the pixel regions on the element substrate 10 is observed perpendicularly to the substrate surface, and FIG. 7 is a cross-sectional view taken along the line BB ′ of FIG. The configuration of this pixel area will be described below with reference to these two drawings.
The first transparent electrode 11 on the element substrate 10 is connected to the scanning line 2 through the TFD element 4. Here, the TFD element 4 includes a first TFD element 4a and a second TFD element 4b. These TFD elements are formed on the surface of the insulating layer 44 covering the surface of the element substrate 10, and are composed of a first metal film 41, an insulating film 43, and a second metal film 42. Here, since the first TFD element 4a is formed in the order of the second metal film 42 / insulating film 43 / first metal film 41, that is, metal / insulator / metal when viewed from the scanning line side, This has a nonlinear diode switching characteristic in both positive and negative directions. The second TFD element 4b is a first metal film 41 / insulating film 43 / second metal film 42 when viewed from the scanning line side, and is formed in the reverse order of the first TFD element 4a. That is, the second TFD element 4b functions as a diode having current-voltage characteristics in which the positive and negative are reversed from those of the first TFD element 4a. Thus, by connecting two diodes in series in opposite directions, the TFD element 4 has current-voltage characteristics that are symmetrical in both positive and negative directions. However, when the liquid crystal display device is not driven by alternating current, it is not necessary to make the diode switching characteristics symmetric as described above, and there is no problem even if the liquid crystal display device is constituted by only a single TFD element.
[0027]
The tip of the second TFD element 4 b is in contact with the first transparent electrode 11. The light shielding film 40 is formed between the element substrate 10 and the first transparent electrode 11 as described above. The light shielding film 40 is formed by the same material and the same process as the second metal film 42.
[0028]
Next, a manufacturing process of the element substrate 10 according to the present embodiment will be described. In addition, the cross-sectional view used for the following description shows the same cross section as the above-described FIG.
First, as shown in FIG. 8A, an insulating layer 44 is formed on the upper surface of the element substrate 10. The insulating layer 44 is made of, for example, tantalum oxide, and is formed by a method of thermally oxidizing a tantalum film deposited by a sputtering method, a sputtering method using a target made of tantalum oxide, a co-sputtering method, or the like. The insulating layer 44 is provided mainly for the purpose of improving the adhesion of the first metal film 41 to be subsequently formed, and further preventing the diffusion of impurities from the element substrate. About 50 to 200 nm is sufficient.
[0029]
Next, as shown in FIG. 2B, a first metal film 41 is formed on the upper surface of the insulating layer 44. The composition of the first metal film 41 is made of, for example, tantalum alone or a tantalum alloy. In the case of using a tantalum alloy, an element belonging to Groups 6 to 8 in the periodic table such as tungsten, chromium, molybdenum, rhenium, yttrium, lanthanum, dysprosium, or the like may be added to the main component tantalum. In addition, as an element to add, tungsten is preferable and the content rate is desirably 0.1 to 6% by weight, for example.
The first metal film 41 can be formed by a sputtering method, an electron beam evaporation method, or the like. When forming the first metal film 41 made of a tantalum alloy, a sputtering method using a mixed target, A co-sputtering method, an electron beam evaporation method, or the like is used. The film thickness of the first metal film 41 is selected as a suitable value depending on the use of the TFD element, and is, for example, about 100 to 500 nm.
Then, as shown in FIGS. 3A and 3B, the first metal film 41 is patterned by a commonly used photolithography and etching technique.
[0030]
Subsequently, as shown in FIG. 4 (4), an insulating film 43 is formed on the surface of the first metal film 41 in the portion corresponding to the TFD element 4 and the portion serving as the basis of the data line 3. Specifically, the surface of the first metal film 41 is formed by being oxidized by an anodic oxidation method. A preferable value for the thickness of the insulating film 43 is selected depending on the application, and is, for example, about 20 to 30 nm. Although the chemical conversion liquid used by anodization is not specifically limited, For example, 0.01-0.1 weight% citric acid aqueous solution can be used.
[0031]
Next, as shown in FIG. 9 (5), a second metal film 42 is formed. The second metal film 42 is made of, for example, chromium, aluminum, titanium, molybdenum, or the like, and is formed by being deposited by a sputtering method or the like. The film thickness of the second metal film 42 is, for example, about 50 to 300 nm.
[0032]
Subsequently, as shown in FIGS. 6A and 6B, the second metal film 42 is patterned by commonly used photolithography and etching techniques. As a result, the second metal film 42 in the first and second TFD elements 4 a and 4 b is formed apart from each other, and the uppermost layer of the data line 3 is also covered with the second metal film 42. . At the same time, the light shielding film 40 is formed here.
[0033]
Then, as shown in FIG. 7 (7), the hatched portion of the insulating film 43 branched from the data line 3 together with the first metal film 41 serving as the basis thereof, is commonly used photolithography. And removed by etching techniques. As a result, the first metal film 41 shared by the first and second TFD elements 4 a and 4 b is electrically separated from the first metal film 41 that is the lowermost layer of the data line 3.
[0034]
Next, as shown in FIG. 8 (8), a conductive film to be the transparent electrode 11 is formed. This conductive film is preferably ITO (Indium Tin Oxide) in a transflective liquid crystal display panel, and is formed by depositing with a film thickness of 30 to 200 nm by a sputtering method or the like.
[0035]
Subsequently, as shown in FIG. 9 (9), the conductive film is patterned by commonly used photolithography and etching techniques to form the transparent electrode 11.
[0036]
Finally, an alignment film 12 is formed on the transparent electrode 11 (not shown). The alignment film 12 is made of a heat resistant resin such as polyimide.
After the alignment film 12 is formed on the substrate, the surface of the alignment film 12 is rubbed in order to align the liquid crystal molecules in a certain direction. The film thickness of the alignment film 12 is, for example, about 50 to 100 nm.
[0037]
Through such a process, the TFD element 4 including the first TFD element 4 a and the second TFD element 4 b is formed on the element substrate 10 together with the transparent electrode 11.
The element substrate 10 thus configured has a counter substrate on which the scanning line 2 that intersects the transparent electrode 11 and extends in the row direction, the color filter 24 of each color corresponding to the transparent electrode 21, and the like are formed. 20 is bonded with a sealing material 30 and conductive particles 31 as spacers while maintaining a certain gap, and for example, a TN (Twisted Nematic) type liquid crystal 32 is sealed in this closed space, and finally the liquid crystal Configured as a display device.
[0038]
The above-described manufacturing method is the same as the existing manufacturing method except that the light shielding film 40 is simultaneously formed in addition to the TFD element 4 in FIG. That is, in the present embodiment, it is possible to form the light shielding film without changing other manufacturing steps only by changing the patterning shape of the second metal film 42.
[0039]
The light shielding film 40 is formed of the second metal film 42 in the above description, but the light shielding film 40 may be any material having a light shielding property. Is not limited to the method described above. For example, in the manufacturing method described above, it is possible to simultaneously form the light shielding film 40 in the step of forming the first metal film 41 shown in FIG. It can also be formed by a laminated structure of the metal film 41, the second metal film 42, and the insulating film 43.
[0040]
Second Embodiment
Hereinafter, the second embodiment will be described.
FIG. 10 is a block diagram showing an electrical configuration of a liquid crystal panel 1 ′ according to the second embodiment of the present invention. In the figure, parts common to the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
[0041]
This embodiment is characterized by having a storage capacitor 9 in a pixel. The storage capacitor 9 is connected in parallel to the liquid crystal capacitor 5 and in series to the TFD element 4.
[0042]
FIG. 11 is a plan view when the sealing material portion and the adjacent pixel region of the liquid crystal panel 1 ′ according to the present embodiment are observed perpendicularly to the substrate surface, and FIG. 12 is CC ′ in FIG. A sectional view of the part is shown. The configuration of this pixel area will be described below with reference to these two drawings.
[0043]
In the present embodiment, a stacked body 54 in which the first metal film 51, the insulating film 53, and the second metal film 52 are stacked is disposed on the element substrate 10 so as to overlap the inclined portion of the counter substrate 20. .
As shown in FIG. 11, the first metal film 51 of the stacked body 54 is electrically connected to the first metal film 51 in the adjacent pixel region, and the first metal film 51 at the end is a sealing material. It is electrically connected to the conduction part 2a of the scanning line extending to the part. And by connecting to the conduction | electrical_connection part 2a here, it will conduct | electrically_connect with the 2nd transparent electrode 21 via the electrically-conductive particle 31, and will become the 2nd transparent electrode 21, ie, the scanning line 2, and equipotential. Further, the second metal film 52 of the laminate 54 is made of the same material as the second metal film 42 constituting the data line 3 and the TFD element 4, and these are formed in the same process and are mutually connected. Conducted. That is, the laminate 54 forms a capacitor using the first metal film 51 as a first electrode plate, the second metal film 52 as a second electrode plate, and the insulating film 53 as a dielectric, The liquid crystal capacitor 5 is connected in parallel. Therefore, this capacitor acts as a storage capacitor for the pixel region.
[0044]
Note that the portion of the first metal film 51 that is formed for conduction, that is, the portion that does not overlap with the inclined portion on the counter substrate 20 affects the aperture ratio of the display region, so that the area can be increased. It needs to be as small as possible.
[0045]
Next, a manufacturing process of the element substrate 10 according to the present embodiment will be described. In addition, the cross-sectional view used for the following description shows the same cross section as the above-described FIG.
First, as shown in FIG. 13A, the insulating layer 44 is formed on the upper surface of the element substrate 10. The insulating layer 44 is made of, for example, tantalum oxide, and is formed by a method of thermally oxidizing a tantalum film deposited by a sputtering method, a sputtering method using a target made of tantalum oxide, a co-sputtering method, or the like. The insulating layer 44 is provided mainly for the purpose of improving the adhesion of the first metal film 51 to be subsequently formed, and further preventing the diffusion of impurities from the element substrate. About 50 to 200 nm is sufficient.
[0046]
Next, as shown in FIG. 2B, a first metal film 51 is formed on the upper surface of the insulating layer 44. The composition of the first metal film 51 is made of, for example, tantalum alone or a tantalum alloy. In the case of using a tantalum alloy, an element belonging to Groups 6 to 8 in the periodic table such as tungsten, chromium, molybdenum, rhenium, yttrium, lanthanum, dysprosium, or the like may be added to the main component tantalum. In addition, as an element to add, tungsten is preferable and the content rate is desirably 0.1 to 6% by weight, for example.
The first metal film 51 can be formed by a sputtering method, an electron beam evaporation method, or the like. When forming the first metal film 51 made of a tantalum alloy, a sputtering method using a mixed target, A co-sputtering method, an electron beam evaporation method, or the like is used. Note that a suitable value is selected for the thickness of the first metal film 51 depending on the application of the TFD element, and is, for example, about 100 to 500 nm.
Then, as shown in FIGS. 3A and 3B, the first metal film 51 is patterned by photolithography and etching techniques generally used. Here, in the present embodiment, unlike the above-described steps of the first embodiment, that is, unlike FIGS. 8 (3a) and (3b), the first portion of the portion that becomes the stacked body 54 in addition to the wiring portion and the TFD element portion. A metal film 51 is formed at the same time.
[0047]
Subsequently, as shown in FIG. 4 (4), an insulating film 53 is formed on the surface of the first metal film 51 in the portion corresponding to the TFD element 4 and the portion serving as the basis of the data line 3. Specifically, the surface of the first metal film 51 is formed by oxidation by an anodic oxidation method. A preferable value for the thickness of the insulating film 53 is selected depending on the application, and is, for example, about 20 to 30 nm. Although the chemical conversion liquid used by anodization is not specifically limited, For example, 0.01-0.1 weight% citric acid aqueous solution can be used.
[0048]
Then, as shown in FIG. 14 (5), the hatched portion of the insulating film 53 branched from the data line 3 together with the first metal film 51 serving as the basis thereof, is commonly used photolithography. And removed by etching techniques. As a result, the first metal film 51 shared by the first and second TFD elements 4a and 4b is electrically separated from the first metal film 51 which is the lowest layer of the data line.
[0049]
Subsequently, as shown in FIG. 6 (6), an insulating film 53 is formed on the surface of the first metal film 51 corresponding to the stacked body 54. This step is formed by using the anodic oxidation method as in the case of FIG. 13 (4), but here, unlike the case of FIG. 13 (4), the film thickness of the insulating film 53 is about 200 to 400 nm. It forms into a film so that it may become.
[0050]
Next, as shown in FIG. 7 (7), a second metal film 52 is formed. The second metal film 52 is made of, for example, chromium, aluminum, titanium, molybdenum, or the like, and is formed by being deposited by a sputtering method or the like. The film thickness of the second metal film 52 is, for example, about 50 to 300 nm.
[0051]
Subsequently, as shown in FIG. 8 (8), the second metal film 52 is patterned by a commonly used photolithography and etching technique. As a result, the second metal film 52 in the first and second TFD elements 4 a and 4 b is formed apart from each other, and the uppermost layer of the data line 3 is also covered with the second metal film 52. .
[0052]
Next, as shown in FIG. 9 (9), a conductive film to be the transparent electrode 11 is formed. This conductive film is preferably ITO in a transflective liquid crystal display panel, and is formed by depositing with a film thickness of 30 to 200 nm by a sputtering method or the like.
[0053]
Subsequently, as shown in FIG. 10 (10), the transparent electrode 11 is formed by patterning the conductive film by commonly used photolithography and etching techniques.
[0054]
Finally, an alignment film 12 is formed on the transparent electrode 11 (not shown). The alignment film 12 is made of a heat resistant resin such as polyimide. After the alignment film 12 is formed on the substrate, the surface of the alignment film 12 is rubbed in order to align the liquid crystal molecules in a certain direction. The film thickness of the alignment film 12 is, for example, about 50 to 100 nm.
[0055]
Through such a process, the TFD element 4 including the first TFD element 4 a and the second TFD element 4 b is formed on the element substrate 10 together with the transparent electrode 11.
The element substrate 10 thus configured has a counter substrate on which the scanning line 2 that intersects the transparent electrode 11 and extends in the row direction, the color filter 24 of each color corresponding to the transparent electrode 21, and the like are formed. 20 is bonded with a sealing material 30 and conductive particles 31 as spacers while maintaining a certain gap, and for example, a TN (Twisted Nematic) type liquid crystal 32 is sealed in this closed space, and finally the liquid crystal Configured as a display device.
[0056]
By adding the storage capacitor 9 as described above, the influence of the parasitic capacitance on the display can be reduced. Liquid crystal capacity 5 is C _LC , TFD element 4 parasitic capacitance C _TFD , Holding capacity C _R Then, the capacity of the liquid crystal part is C _LC And C _R Can be expressed as the sum of That is, if the capacitance ratio of the liquid crystal portion to the TFD element 4 is k, k is expressed by the following equation (1).
[0057]
[Expression 1]

[0058]
That is, by applying the present invention, C _LC Or C _TFD Without changing the size, that is, without changing the size or material of the pixel 6 or the TFD element 4. _R It is possible to improve the capacity ratio k by changing.
As the capacitance ratio k increases, the parasitic capacitance C increases. _TFD However, the capacity ratio k is increased, that is, the holding capacity C _R If this is increased, the voltage load on the liquid crystal is increased. The value of the capacity ratio k is desirably a value of about 3 to 4, and the storage capacity C _R What is necessary is just to determine the material and size.
[0059]
The first metal film 51 / insulating film 53 / second metal film 52 of the stacked body 54 is the same as the structure of the TFD element 4, but the layer thickness of the insulating film 53 in the stacked body 54 is the same. Is about 200 to 400 nm, which is about 10 times or more the film thickness (about 20 to 30 nm) of the insulating film 43 of the TFD element 4, so that the laminate 54 does not have diode switching characteristics.
[0060]
As described above, by configuring the multilayer body 54 in the manner described in this embodiment, the multilayer body 54 functions as a storage capacitor at the same time as a light shielding film, and overlaps with improvement in display quality of the liquid crystal display device. Will contribute.
[0061]
In the above description, the first metal film 51 and the second metal film 52 constituting the stacked body 54 are formed at the same time in the step of forming the TFD element 4, but the stacked body 54 is different from the TFD element 4. It may be formed in different steps.
In the above description, the first metal film 51, the second metal film 52, and the insulating film 53 that constitute the stacked body 54 are the first metal film 51, the second metal film 52, and the like that constitute the TFD element 4. Although it is formed of the same material as the insulating film 53, the stacked body 54 does not have to have the same configuration as the TFD element 4 as long as it has a light shielding property and a storage capacity. It doesn't matter.
[0062]
<Third Embodiment>
The third embodiment will be described below.
In the present embodiment, the electrical configuration of the liquid crystal panel is the same as that of the first embodiment. Therefore, this description is omitted.
FIG. 15 is a plan view of one of the pixel regions of the liquid crystal panel 1 according to the third embodiment of the present invention as viewed perpendicular to the substrate surface of the element substrate 10, and FIG. 16 is a DD in FIG. 'The cross-sectional view of the part is shown respectively. The main difference between the present embodiment and the two embodiments described above is that the first transparent electrode 11 extends over almost the entire pixel region. This is because, as shown in FIG. 16, by forming a transparent insulating layer 61 on the substrate, the first transparent electrode 11 can cover the entire pixel region without being electrically connected to the data line 3. The configuration of the element substrate 10 will be described below.
[0063]
On the element substrate 10, the data line 3 and the TFD element 4 are formed by the first metal film 41, the insulating film 43, and the second metal film 42. Since these materials and the manufacturing method are the same as those in the first embodiment, the description thereof is omitted here.
A conductor 62 is formed so as to be electrically connected to the second metal film 42 constituting the second TFD. The conductor 62 is made of the same chromium as the second metal film 42 and is formed simultaneously with the second metal film 42.
Next, an insulating layer 61 is formed on the substrate. The insulating layer 61 is made of a photosensitive acrylic resin or the like, and is formed with a layer thickness sufficient to cover the TFD element 4 and the conductor 62 described above.
[0064]
A first transparent electrode 11 that is a transparent electrode is formed on the insulating layer 61. The material and film forming method are as already described in the first embodiment.
A contact hole 63 is provided on the first transparent electrode 11 so as to be in contact with the conductor 62 and overlap the inclined portion on the counter substrate 20 when viewed perpendicularly to the substrate surface. Yes. The first transparent electrode 11 is electrically connected to the conductor 62 and the TFD element 4 through the contact hole 63, so that a voltage can be applied to the liquid crystal layer interposed between the first substrate and the second substrate. It becomes.
[0065]
Subsequently, a manufacturing process of the element substrate 10 according to the present embodiment will be described. The cross-sectional view used for the following description shows the same cross section as that of FIG.
The manufacturing process of the element substrate 10 according to the present embodiment is the same as that of the first embodiment up to the patterning step of the second metal film 42 shown in FIG. The explanation starts from the process following.
[0066]
As shown in FIG. 17A, the second metal film 42 is patterned by a commonly used photolithography and etching technique. As a result, the second metal film 42 in the first and second TFD elements 4 a and 4 b is formed apart from each other, and the uppermost layer of the data line 3 is also covered with the second metal film 42. . The difference from FIG. 8 (6) is only that the light shielding film 40 is not formed.
[0067]
After patterning the second metal film 42, an insulating layer 61 is formed as shown in FIG. Specifically, for example, when the insulating layer 61 is a photosensitive acrylic resin, the insulating layer 61 is formed by a spin coat method or the like. Since the insulating layer 61 is formed to insulate the first transparent electrode 11 from the data line 3, the thickness of the insulating layer 61 only needs to be sufficient to cover the data line 3.
[0068]
After the insulating layer 61 is formed, a contact hole 63 is subsequently formed as shown in FIG. The contact hole 63 is formed by a method such as dry etching so that the transparent electrode 11 formed in the next step and the conductor 62 are electrically connected. Thereafter, the transparent electrode 11 is formed as shown in FIG.
Thereafter, unnecessary portions of the first metal film 41 shown in FIG. 8 (7) are similarly removed, and the alignment film 12 is formed and rubbed. Since these are the same as those in the first embodiment, the description thereof is omitted.
[0069]
By adopting such a structure, the area of the first transparent electrode 11 in the pixel region is not affected by the position of the data line 3 and is not in contact with the first transparent electrode 11 in the adjacent pixel region. Can be made as large as possible, and the aperture ratio is improved. That is, the contrast of the liquid crystal display device can be increased.
[0070]
Further, as described above, the contact hole 63 is provided so as to overlap the inclined portion on the counter substrate 20 when viewed perpendicularly to the substrate surface, so that the contact hole 63 is opened on the display region. It does not cause a decrease in the rate, and at least a part of the inclined portion is shielded by the contact hole 63 and has the two effects of reducing the light leakage described above.
As for the shape of the conductor 62, it is sufficient if the first transparent electrode 11 and the TFD element 4 are large enough to conduct. However, the shape of the conductor 62 may be a part or all of the inclined portion. It may be formed large so as to match. By doing in this way, it is possible to increase the light shielding area | region which prevents the light leakage of the said inclination part.
[0071]
Finally, an electronic apparatus equipped with the liquid crystal display device 100 described above will be described.
FIG. 18 is an external view of a mobile phone terminal 70 using the liquid crystal display device 100 as a display unit. In the figure, a mobile phone terminal 70 includes the liquid crystal display device 100 as a display unit for displaying various information such as a telephone number, in addition to a plurality of operation buttons 71, as well as an earpiece 72 and a mouthpiece 73.
Besides the mobile phone terminal, the liquid crystal display device 100 can also be used as a display unit of various electronic devices such as a computer, a projector, a digital still camera, a movie camera, an in-vehicle device, a copying machine, and an audio device. .
[0072]
<Modification>
In addition, this invention can also be implemented with the following aspects.
In the first embodiment and the second embodiment described above, the light shielding film is formed so as to cover the entire inclined portion. However, if the light shielding film covers at least a part of the inclined portion, the light leakage described above with respect to the portion. Has the effect of blocking.
Further, the transmissive display region T and the reflective display region R on the pixel region are not necessarily as described above, and their shapes are arbitrary within a manufacturable range. The area ratio between the transmissive display region T and the reflective display region R is also free. If the emphasis is placed on the transmissive display mode according to the use of the electronic device to which the present invention is applied, the ratio of the transmissive display region T is increased. On the contrary, if the emphasis is placed on the reflective display mode, the ratio of the reflective display region R may be increased.
[0073]
In addition, a storage capacitor can be added in the configuration of the third embodiment. Specifically, a capacitive electrode made of a transparent material such as ITO is formed on the insulating layer 61, and the first transparent electrode 11 is placed on the capacitive electrode so that they do not conduct. Formed with layers in between. If the capacitor electrode is electrically connected to the scanning line electrode at the sealing material portion in the above configuration, a storage capacitor can be generated between the capacitor electrode and the data line 3.
[0074]
In each of the above-described embodiments, a liquid crystal panel provided with a TFD (thin film diode) as a switching element is shown. However, the type of the switching element is not limited to TFD, and for example, a TFT (Thin Film Transistor) or the like. The present invention can also be applied to an active matrix type liquid crystal panel using as a switching element.
[Brief description of the drawings]
FIG. 1 is a block diagram showing an electrical configuration of a liquid crystal panel according to a first embodiment of the present invention.
FIG. 2 is a perspective view of a liquid crystal panel in the same embodiment.
3 is a cross-sectional view taken along line AA ′ of FIG.
FIG. 4 is a cross-sectional view showing one of the pixel regions in the embodiment.
FIG. 5 is a perspective view showing one of the pixel regions in the embodiment.
FIG. 6 is a plan view showing one of the pixel regions on the element substrate in the same embodiment.
7 is a cross-sectional view taken along the line BB ′ of FIG.
FIG. 8 is a diagram showing a method for manufacturing an element substrate in the same embodiment.
FIG. 9 is a view showing a method of manufacturing an element substrate in the same embodiment.
FIG. 10 is a block diagram showing an electrical configuration of a liquid crystal panel according to a second embodiment of the present invention.
FIG. 11 is a plan view of a sealing material portion and an adjacent pixel region of the liquid crystal panel 1 ′ in the same embodiment.
12 is a cross-sectional view taken along line CC ′ of FIG.
FIG. 13 is a diagram showing a method of manufacturing the element substrate in the same embodiment.
FIG. 14 is a diagram showing a method of manufacturing the element substrate in the same embodiment.
FIG. 15 is a plan view showing one of pixel regions on an element substrate according to a third embodiment of the present invention.
16 is a cross-sectional view taken along the line DD ′ of FIG.
FIG. 17 is a diagram showing a method of manufacturing the element substrate in the same embodiment.
FIG. 18 is a diagram illustrating an example of an electronic apparatus in which the liquid crystal display device according to the invention is mounted as a display unit.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1,1 '... Liquid crystal panel, 2 ... Scan line, 3 ... Data line, 4 ... TFD element, 5 ... Liquid crystal capacity, 6 ... Pixel, 9 ... Retention capacity, 10 ... Element substrate, 11 ... 1st transparent electrode, DESCRIPTION OF SYMBOLS 20 ... Counter substrate, 21 ... 2nd transparent electrode, 25 ... Film thickness adjustment layer, 30 ... Sealing material, 31 ... Conductive particle, 32 ... Liquid crystal, 40 ... Light shielding film, 41 ... 1st metal film, 42 ... 1st 2 ... Metal film 43 ... Insulating film 44 ... Insulating layer 54 ... Laminated body 62 ... Conductor 63 ... Contact hole 70 ... Mobile phone terminal 100 ... Liquid crystal display device

Claims (10)

A first substrate having a first transparent electrode formed on a surface thereof;
A second substrate on which a second transparent electrode is formed on a surface facing the first transparent electrode;
A liquid crystal layer held between the first substrate and the second substrate;
The second substrate includes a reflective display area, a transmissive display area, and the second display area, which are distinguished from each other in a pixel area in which the first transparent electrode and the second transparent electrode are opposed to each other by a layer thickness of the liquid crystal layer. A boundary area of two display areas,
The first substrate has a switching element and a light shielding layer,
The switching element is formed by laminating a first metal film, an insulating film, and a second metal film that conducts to the first transparent electrode,
The light shielding layer is made of the same material as at least one of a plurality of constituent elements forming the switching element, and is at least in a region on the first substrate and facing the boundary region on the second substrate. A liquid crystal display device formed to cover a part. A first substrate having a first transparent electrode formed on a surface thereof;
A second substrate on which a second transparent electrode is formed on a surface facing the first transparent electrode;
A liquid crystal layer held between the first substrate and the second substrate;
The second substrate includes a reflective display area, a transmissive display area, and the second display area, which are distinguished from each other in a pixel area in which the first transparent electrode and the second transparent electrode are opposed to each other by a layer thickness of the liquid crystal layer. A boundary area of two display areas,
The first substrate has a switching element and a storage capacitor,
The switching element is formed by laminating a first metal film, an insulating film, and a second metal film that conducts to the first transparent electrode,
The storage capacitor is formed of a first capacitor electrode, a dielectric, and a second capacitor electrode, and is on at least one of regions on the first substrate and facing the boundary region on the second substrate. A liquid crystal display device formed so as to cover a portion. A first substrate having a first transparent electrode formed on a surface thereof;
A second substrate on which a second transparent electrode is formed on a surface facing the first transparent electrode;
A liquid crystal layer held between the first substrate and the second substrate;
The second substrate includes a reflective display area, a transmissive display area, and the second display area, which are distinguished from each other in a pixel area in which the first transparent electrode and the second transparent electrode are opposed to each other by a layer thickness of the liquid crystal layer. A boundary area of two display areas,
The first substrate includes a data line and a switching element, and an insulating layer that insulates the data line and the switching element from the first transparent electrode,
A contact hole formed in the insulating layer for conducting the switching element and the first transparent electrode, and a metal layer overlapping the contact hole ,
The liquid crystal display device, wherein the contact hole overlapping with the metal layer is formed in at least a part of a region on the second substrate facing the boundary region on the first substrate. A first substrate having a first transparent electrode formed on a surface thereof;
A second substrate on which a second transparent electrode is formed on a surface facing the first transparent electrode;
A liquid crystal layer held between the first substrate and the second substrate;
The second substrate includes a reflective display area, a transmissive display area, and the second display area, which are distinguished from each other in a pixel area in which the first transparent electrode and the second transparent electrode are opposed to each other by a layer thickness of the liquid crystal layer. A boundary area of two display areas,
The first substrate includes a switching element and a light shielding layer formed by laminating a first metal film, an insulating film, and a second metal film electrically connected to the first transparent electrode. A manufacturing method of
The light shielding layer is made of the same material and process as at least one of the plurality of constituent elements forming the switching element , and is on the first substrate and faces the boundary region on the second substrate. A method for manufacturing a liquid crystal display device, characterized by being formed so as to cover at least a part of a region . A first substrate having a first transparent electrode formed on a surface thereof;
A second substrate on which a second transparent electrode is formed on a surface facing the first transparent electrode;
A liquid crystal layer held between the first substrate and the second substrate;
The second substrate includes a reflective display area, a transmissive display area, and the second display area, which are distinguished from each other in a pixel area in which the first transparent electrode and the second transparent electrode are opposed to each other by a layer thickness of the liquid crystal layer. A boundary area of two display areas,
The first substrate includes a switching element formed by laminating a first metal film, an insulating film, and a second metal film conductive to the first transparent electrode, a first capacitor electrode, A method of manufacturing a liquid crystal display device having a storage capacitor formed by a dielectric and a second capacitor electrode,
A first step of forming the first capacitive electrode so as to cover at least a part of a region on the first substrate and facing the boundary region on the second substrate;
A second step of forming a dielectric held between the first capacitor electrode and the second capacitor electrode on the first capacitor electrode formed in the first step;
And a third step of forming the second capacitor electrode on the dielectric formed in the second step. 6. The method of manufacturing a liquid crystal display device according to claim 5, wherein the first capacitor electrode is formed in the same step as the first metal film constituting the switching element. 6. The method of manufacturing a liquid crystal display device according to claim 5, wherein the second capacitor electrode is formed in the same step as the second metal film constituting the switching element. 6. The method of manufacturing a liquid crystal display device according to claim 5, wherein the dielectric is obtained by anodizing the first metal film in the same manner as the insulating film constituting the switching element. A first substrate having a first transparent electrode formed on a surface thereof;
A second substrate on which a second transparent electrode is formed on a surface facing the first transparent electrode;
A liquid crystal layer held between the first substrate and the second substrate;
The second substrate includes a reflective display area, a transmissive display area, and the second display area, which are distinguished from each other in a pixel area in which the first transparent electrode and the second transparent electrode are opposed to each other by a layer thickness of the liquid crystal layer. A boundary area of two display areas,
The first substrate includes a data line and a switching element, and an insulating layer that insulates the data line and the switching element from the first transparent electrode,
Wherein a contact hole formed in the insulating layer, a method of manufacturing a liquid crystal display device having a metal layer overlapping the contact hole in order to conduct the first transparent electrode and the switching element,
The liquid crystal comprising a step of forming the contact hole overlapping the metal layer in at least a part of a region on the first substrate and facing the boundary region on the second substrate. Manufacturing method of display device. An electronic apparatus using the liquid crystal display device according to claim 1 as a display unit.

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