JP4241535B2 - Polymer compound, positive resist material, and pattern forming method using the same - Google Patents

Description

  In the present invention, in the exposure with high energy rays, the alkali dissolution rate contrast before and after exposure is significantly high, the sensitivity is high, the resolution is low, the line edge roughness is small, and the etching resistance is excellent. The present invention relates to a positive resist material suitable as a fine pattern forming material for manufacturing or photomask pattern creation, and particularly to a chemically amplified positive resist material.

  In recent years, along with higher integration and higher speed of LSI, pattern rule miniaturization is progressing rapidly. The background of the rapid progress in miniaturization includes higher projection lens NA, improved resist performance, and shorter wavelength. In particular, the shortening of the wavelength from i-line (365 nm) to KrF (248 nm) has brought about a major change, and the mass production of 0.18 μm rule devices has become possible. Chemically amplified positive resist materials using acid as a catalyst (for example, see Patent Documents 1 and 2) have excellent characteristics for increasing the resolution and sensitivity of resists, and are particularly mainstream in deep ultraviolet lithography. Resist material.

  Resist materials for KrF excimer lasers are generally used in 0.3 micron processes, passed through the 0.25 micron rule, and are now applied to mass production of the 0.18 micron rule. Has also begun, and the momentum of miniaturization is increasingly accelerated. The shortening of the wavelength from the KrF excimer laser to the ArF excimer laser (193 nm) is expected to reduce the design rule to 0.13 μm or less, but conventionally used novolak and polyvinylphenol resins Has a very strong absorption in the vicinity of a wavelength of 193 nm, so it was difficult to use as a base resin for resist. Therefore, acrylic and cycloolefin-based alicyclic resins have been studied in order to ensure transparency and necessary dry etching resistance (see, for example, Patent Documents 3 to 6).

  In particular, a (meth) acrylic-based resin resist having high resolution has been studied. As the (meth) acrylic resin, a combination of (meth) acryl having a methyladamantane ester as an acid labile group unit and (meth) acryl having an ester of a lactone ring as an adhesive group unit has been proposed (for example, (See Patent Document 7). In addition, an acid labile group having an exo form has been introduced (for example, see Patent Document 8). Since these have high acid detachability and low activation energy in acid detachment, high resolution and low post-exposure bake (PEB) dependency can be obtained. Furthermore, norbornyl lactone has been proposed as an adhesive group with enhanced etching resistance (see, for example, Patent Documents 9 and 10).

  One of the problems in ArF lithography is reduction of line edge roughness and reduction of residues after development. One factor of line edge roughness is swelling during development. Polyhydroxystyrene phenol used as a resist for KrF lithography is a weakly acidic group and has a moderate alkali solubility and is difficult to swell, but a polymer containing a highly hydrophobic alicyclic group is highly acidic. Since it is dissolved by carboxylic acid, swelling during development is likely to occur.

  Here, the amount of swelling during development has been reported by measuring the development characteristics of a resist by a QCM (Quartz Crystal Microbalance) method (see, for example, Non-Patent Document 1). In the conventional optical interference type film thickness measurement method, the swelling of the film during development could not be observed, but in the QCM method, in order to electrically measure the change in the weight of the film, an increase in the weight of the film due to the swelling is observed. It is possible. Non-Patent Document 1 shows swelling of a cycloolefin polymer-based ArF resist. In particular, intense swelling has been observed when carboxylic acid is used as the adhesive group.

JP-B-2-27660 JP 63-27829 A JP-A-9-73173 JP-A-10-10739 Japanese Patent Laid-Open No. 9-230595 International Publication No. 97/33198 Pamphlet JP-A-9-90637 JP 2000-327633 A JP 2000-26446 A JP 2000-159758 A Proc. SPIE Vol. 3999 p2 (2000)

  The present invention has been made in view of such problems, and has high sensitivity and high resolution in exposure with a high energy beam, and also has low line edge roughness because swelling during development is suppressed. It is an object of the present invention to provide a positive resist material with little residue after development.

（式中、Ｒ^１は水素原子、メチル基、−ＣＨ_２ＣＯ_２Ｒ^７を示す。Ｒ^２は水素原子、メチル基、−ＣＯ_２Ｒ^７を示す。Ｒ^３、Ｒ^４はそれぞれ独立に炭素数１〜１０の直鎖状、分岐状、環状の１価の炭化水素基を示す。又は、Ｒ^３、Ｒ^４は互いに結合してこれらが結合する炭素原子と共に脂肪族炭化水素環を形成してもよい。Ｒ^５は、フランジイル、テトラヒドロフランジイル、オキサノルボルナンジイルから選ばれる２価の基を示す。Ｒ^６は水素原子又はヘテロ原子を含んでもよい炭素数１〜１０の直鎖状、分岐状、環状の１価炭化水素基を示す。Ｒ^７は水素原子又は炭素数１〜１５の直鎖状、分岐状、環状のアルキル基を示す。Ｒ^９、Ｒ^１６は水素原子、メチル基、−ＣＨ_２ＣＯ_２Ｒ^７を示す。Ｒ^８、Ｒ^１５は水素原子、メチル基、−ＣＯ_２Ｒ^７を示す。Ｒ^１０、Ｒ^１７は単結合又は炭素数１〜４の直鎖状、分岐状のアルキレン基を示す。Ｒ^１１は単結合又は炭素数１〜４の直鎖状、分岐状のアルキレン基を示す。Ｒ^１２、Ｒ^１３はトリフルオロメチル基又はメチル基であるが、Ｒ^１２とＲ^１３の両方がメチル基になることはない。Ｒ^１８はフッ素原子又はトリフルオロメチル基である。Ｒ^１４、Ｒ^１９は水素原子又は酸不安定基である。Ｒ^２３は炭素数４〜２０の環状のアルキレン基であり、有橋環式のアルキレン基でも良く、酸素原子、硫黄原子を含んでいても良い。Ｒ^２４、Ｒ^２５はそれぞれ水素原子またはフッ素原子である。Ｚ^１は炭素数４〜１２の有橋環式炭化水素基であり、−Ｏ−、−Ｓ−を有していても良い。Ｙ^１、Ｙ^２はそれぞれ−Ｏ−又は−Ｃ（＝Ｏ）−Ｏ−である。ａ、ｂ、ｃは、各繰り返し単位のモル比を表し、０．１≦ａ≦０．８、０≦ｂ≦０．８、０≦ｃ≦０．８、０．０５≦ｂ＋ｃ≦０．８の範囲である。） In order to solve the above problems, according to the present invention, at least a repeating unit represented by the following general formula (1a), a repeating unit represented by the following general formula (1b) and / or the following general formula (1c): A polymer compound having the repeating unit shown is provided (claim 1).

(In the formula, R ¹ represents a hydrogen atom, a methyl group or —CH ₂ CO ₂ R ^7. R ² represents a hydrogen atom, a methyl group or —CO ₂ R ^7. R ³ and R ⁴ are each independently carbon. A linear, branched or cyclic monovalent hydrocarbon group having a number of 1 to 10. Alternatively, R ³ and R ⁴ are bonded to each other to form an aliphatic hydrocarbon ring together with the carbon atoms to which they are bonded. R ⁵ represents a divalent group selected from frangiyl, tetrahydrofurandiyl, and oxanorbornanediyl, and R ⁶ is a linear or branched group having 1 to 10 carbon atoms that may contain a hydrogen atom or a heteroatom. R ⁷ represents a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 15 carbon atoms, R ⁹ and R ¹⁶ represent a hydrogen atom, a methyl group, ^{.R 8, R 15} showing the -CH ₂ CO ₂ R ⁷ are hydrogen atoms , ^{.R 10, R 17} is a single bond or a C1-4 a straight, branched alkylene group ^{.R 11} is a single bond or a 1 to 4 carbon atoms which indicates a methyl group, _-CO 2 ^{R 7} R ¹² and R ¹³ are trifluoromethyl groups or methyl groups, but R ¹² and R ¹³ are not both methyl groups, and R ¹⁸ is fluorine. R ¹⁴ and R ¹⁹ are hydrogen atoms or acid labile groups, R ²³ is a cyclic alkylene group having 4 to 20 carbon atoms, and may be a bridged cyclic alkylene group. R ²⁴ and R ²⁵ are each a hydrogen atom or a fluorine atom, Z ¹ is a bridged cyclic hydrocarbon group having 4 to 12 carbon atoms, and —O— which may have a -S- ^.Y 1, ^{Y 2} is Respectively -O- or -C (= O) is -O- .a, b, c represents the molar ratio of respective repeating units, 0.1 ≦ a ≦ 0.8,0 ≦ b ≦ 0 .8, 0 ≦ c ≦ 0.8, 0.05 ≦ b + c ≦ 0.8.)

（式中、Ｒ^１５〜Ｒ^１９、Ｒ^２４、Ｒ^２５、Ｙ^２、ｃは前記と同様である。Ｘ¹は単結合、メチレン基、エチレン基、酸素原子、硫黄原子のいずれかである。） In this case, the repeating unit represented by the general formula (1c) may be a repeating unit represented by the following general formula (1c-1) (Claim 2).

(In the formula, R ^{15 to} R ¹⁹ , R ²⁴ , R ²⁵ , Y ² , and c are the same as described above. X ¹ is a single bond, a methylene group, an ethylene group, an oxygen atom, or a sulfur atom. )

（式中、Ｒ¹〜Ｒ^４、ａは前記と同様である。） In addition, the repeating unit represented by the general formula (1a) is preferably a repeating unit represented by the following general formula (1a-1) (claim 3).

(Wherein R ^{1 to} R ⁴ and a are the same as described above.)

（式中、Ｒ¹〜Ｒ^４、ａは前記と同様である。Ｒ^２０、Ｒ^２１は単結合又は炭素数１〜４のアルキレン基であり、Ｒ^２０＋Ｒ^２１が炭素数３〜６のアルキレン基であり、２重結合を含んでいても良い。） In addition, the repeating unit represented by the general formula (1a) is preferably a repeating unit represented by the following general formula (1a-2) (claim 4).

(Wherein R ^{1 to} R ⁴ and a are the same as described above. R ²⁰ and R ²¹ are a single bond or an alkylene group having 1 to 4 carbon atoms, and R ²⁰ + R ²¹ is an alkylene having 3 to 6 carbon atoms. Group and may contain a double bond.)

  Such a positive resist material containing the polymer compound of the present invention as a base resin (Claim 5) has a significantly high alkali dissolution rate contrast before and after exposure, and high sensitivity and high resolution in exposure with a high energy beam. Since it has image quality and swelling during development is suppressed, the line edge roughness is small, the etching residue is small, and the etching resistance is excellent. Therefore, since it has these characteristics, it is highly practical and suitable as a material for forming a fine pattern for VLSI manufacturing or photomask pattern creation.

  The positive resist material of the present invention is preferably a chemically amplified resist material further containing an organic solvent and an acid generator.

  Thus, by using the polymer compound of the present invention as a base resin and further blending an organic solvent and an acid generator, the dissolution rate of the polymer compound in the developing solution is accelerated by an acid-catalyzed reaction in the exposed area. Therefore, a chemically amplified positive resist material with extremely high sensitivity can be obtained, and it is very suitable as a fine pattern forming material for ultra-LSI manufacturing or the like that is required in recent years.

  In this case, the positive resist material of the present invention can further contain a dissolution inhibitor (claim 7).

  Thus, by mix | blending a dissolution inhibitor with a positive resist material, the difference of the dissolution rate of an exposed part and an unexposed part can be enlarged further, and the resolution can be improved further.

  In the positive resist material of the present invention, a basic compound and / or a surfactant can be further blended as an additive (claim 8).

  Thus, by adding a basic compound, for example, the acid diffusion rate in the resist film can be suppressed to further improve the resolution, and by adding a surfactant, the resist material can be applied. Can be further improved or controlled.

  Such a resist material of the present invention includes at least a step of applying the resist material on the substrate, a step of exposing to high energy rays after the heat treatment, and a step of developing using a developer. It can be used as a method for forming a pattern on a semiconductor substrate, a mask substrate or the like.

  Needless to say, development may be performed after the post-exposure heat treatment, and various other processes such as an etching process, a resist removal process, and a cleaning process may be performed.

  In this case, the high energy ray can be in a wavelength range of 180 nm to 200 nm.

  The resist material containing the polymer compound of the present invention as a base resin can be suitably used particularly for exposure with high energy rays in the wavelength range of 180 nm to 200 nm, and has excellent sensitivity at exposure wavelengths in this range.

  As described above, according to the present invention, an ester monomer having an oxygen elimination function having an oxygen atom and a substituted or unsubstituted alcohol having a fluorinated alkyl group or a fluorine atom at the α-position are included. A polymer compound copolymerized with an ester compound monomer to obtain a repeating unit is provided. By blending this polymer compound with a resist material as a base resin, it has high sensitivity and high resolution, and has a line edge. The roughness is small, the residue after development is reduced, and the swelling during development can be suppressed by measurement by the QCM method or the like. Therefore, it is possible to provide a positive resist material such as a chemically amplified positive resist material that is particularly suitable as a fine pattern forming material for VLSI manufacturing or photomask pattern creation.

The present inventors have a positive resist that has high sensitivity and high resolution in exposure with a high energy beam, and has low line edge roughness due to suppression of swelling during development, and few residues after development. In order to obtain the material, intensive study was conducted.
Here, a resist material based on a high molecular compound containing an ester monomer having an oxygen-eliminating function having an oxygen atom has a high acid-eliminating property and low activation energy in acid-eliminating, so that it is high. It has been found that resolution and the like can be obtained.
In addition, a resist using hexafluoroalcohol has been studied for F ₂ lithography. Hexafluoroalcohol has been reported to have acidity comparable to that of phenol and small swelling in the developer (J. Photopolym. Sci. Technol., Vol. 16, No. 4, p523 (2003)). ). In addition, polynorbornene having hexafluoroalcohol, α-trifluoromethyl acrylate having hexafluoroalcohol as a pendant are introduced, and exposure characteristics in exposure with an ArF excimer laser are introduced.
Therefore, the present inventors apply these to obtain a combination of a specific acid-labile group (meth) acrylate having an oxygen atom and an adhesive group having alkali solubility represented by hexafluoroalcohol. By using such a polymer compound as a base resin, it is possible to provide a positive resist material that has high sensitivity and high resolution, has little line edge roughness due to swelling during development, and few residues after development. Thus, the present invention has been completed.

（式中、Ｒ^１は水素原子、メチル基、−ＣＨ₂ＣＯ₂Ｒ^７を示す。Ｒ^２は水素原子、メチル基、−ＣＯ₂Ｒ^７を示す。Ｒ^３、Ｒ^４はそれぞれ独立に炭素数１〜１０の直鎖状、分岐状、環状の１価の炭化水素基を示す。又は、Ｒ^３、Ｒ^４は互いに結合してこれらが結合する炭素原子と共に脂肪族炭化水素環を形成してもよい。Ｒ^５は、フランジイル、テトラヒドロフランジイル、オキサノルボルナンジイルから選ばれる２価の基を示す。Ｒ^６は水素原子又はヘテロ原子を含んでもよい炭素数１〜１０の直鎖状、分岐状、環状の１価炭化水素基を示す。Ｒ^７は水素原子又は炭素数１〜１５の直鎖状、分岐状、環状のアルキル基を示す。Ｒ^９、Ｒ^１６は水素原子、メチル基、−ＣＨ₂ＣＯ₂Ｒ^７を示す。Ｒ^８、Ｒ^１５は水素原子、メチル基、−ＣＯ₂Ｒ^７を示す。Ｒ^１０、Ｒ^１７は単結合又は炭素数１〜４の直鎖状、分岐状のアルキレン基を示す。Ｒ^１１は単結合又は炭素数１〜４の直鎖状、分岐状のアルキレン基を示す。Ｒ^１２、Ｒ^１３はトリフルオロメチル基又はメチル基であるが、Ｒ^１２とＲ^１３の両方がメチル基になることはない。Ｒ^１８はフッ素原子又はトリフルオロメチル基である。Ｒ^１４、Ｒ^１９は水素原子又は酸不安定基である。Ｒ^２３は炭素数４〜２０の環状のアルキレン基であり、有橋環式のアルキレン基でも良く、酸素原子、硫黄原子を含んでいても良い。Ｒ^２４、Ｒ^２５はそれぞれ水素原子またはフッ素原子である。Ｚ^１は炭素数４〜１２の有橋環式炭化水素基であり、−Ｏ−、−Ｓ−を有していても良い。Ｙ^１、Ｙ^２はそれぞれ−Ｏ−又は−Ｃ（＝Ｏ）−Ｏ−である。ａ、ｂ、ｃは、０．１≦ａ≦０．８、０≦ｂ≦０．８、０≦ｃ≦０．８、０．０５≦ｂ＋ｃ≦０．８の範囲である。） That is, the polymer compound according to the present invention includes at least a repeating unit represented by the following general formula (1a), a repeating unit represented by the following general formula (1b) and / or a repeating unit represented by the following general formula (1c). It is a high molecular compound which has a unit.

(In the formula, R ¹ represents a hydrogen atom, a methyl group, or —CH ₂ CO ₂ R ^7. R ² represents a hydrogen atom, a methyl group, or —CO ₂ R ^7. R ³ and R ⁴ are each independently carbon. A linear, branched or cyclic monovalent hydrocarbon group having a number of 1 to 10. Alternatively, R ³ and R ⁴ are bonded to each other to form an aliphatic hydrocarbon ring together with the carbon atoms to which they are bonded. R ⁵ represents a divalent group selected from frangiyl, tetrahydrofurandiyl, and oxanorbornanediyl, and R ⁶ is a linear or branched group having 1 to 10 carbon atoms that may contain a hydrogen atom or a heteroatom. R ⁷ represents a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 15 carbon atoms, R ⁹ and R ¹⁶ represent a hydrogen atom, a methyl group, ^{.R 8, R 15} showing the -CH ₂ CO ₂ R ⁷ represents a hydrogen atom, menu Le group, -CO ₂ shows the ^{R 7 .R 10,} R ¹⁷ is a single bond or a C1-4 a straight, branched alkylene group ^{.R 11} is a single bond or a 1 to 4 carbon atoms R ¹² and R ¹³ are a trifluoromethyl group or a methyl group, but R ¹² and R ¹³ are not both methyl groups, and R ¹⁸ is a fluorine atom. Or a trifluoromethyl group, R ¹⁴ and R ¹⁹ are a hydrogen atom or an acid labile group, R ²³ is a cyclic alkylene group having 4 to 20 carbon atoms, and may be a bridged cyclic alkylene group, May contain an oxygen atom or a sulfur atom, each of R ²⁴ and R ²⁵ is a hydrogen atom or a fluorine atom, Z ¹ is a bridged cyclic hydrocarbon group having 4 to 12 carbon atoms, —O—, may have a -S- ^.Y 1, ^{Y 2} are each O— or —C (═O) —O—, a, b, c are 0.1 ≦ a ≦ 0.8, 0 ≦ b ≦ 0.8, 0 ≦ c ≦ 0.8, 0. 05 ≦ b + c ≦ 0.8.)

（式中、Ｒ^１５〜Ｒ^１９、Ｒ^２４、Ｒ^２５、Ｙ^２、ｃは前記と同様である。Ｘ¹は単結合、メチレン基、エチレン基、酸素原子、硫黄原子のいずれかである。） In this case, the repeating unit represented by the general formula (1c) may be a repeating unit represented by the following general formula (1c-1).

(In the formula, R ^{15 to} R ¹⁹ , R ²⁴ , R ²⁵ , Y ² , and c are the same as described above. X ¹ is a single bond, a methylene group, an ethylene group, an oxygen atom, or a sulfur atom. )

（式中、Ｒ¹〜Ｒ^４、ａは前記と同様である。） Moreover, it is preferable that the repeating unit shown by the said general formula (1a) is a repeating unit shown by the following general formula (1a-1).

(Wherein R ^{1 to} R ⁴ and a are the same as described above.)

（式中、Ｒ¹〜Ｒ^４、ａは前記と同様である。Ｒ^２０、Ｒ^２１は単結合又は炭素数１〜４のアルキレン基であり、Ｒ^２０＋Ｒ^２１が炭素数３〜６のアルキレン基であり、２重結合を含んでいても良い。） Moreover, it is preferable that the repeating unit shown by the said general formula (1a) is a repeating unit shown by the following general formula (1a-2).

(Wherein R ^{1 to} R ⁴ and a are the same as described above. R ²⁰ and R ²¹ are a single bond or an alkylene group having 1 to 4 carbon atoms, and R ²⁰ + R ²¹ is an alkylene having 3 to 6 carbon atoms. Group and may contain a double bond.)

  Such a positive resist material containing the polymer compound of the present invention as a base resin has a significantly high alkali dissolution rate contrast before and after exposure, and high sensitivity and high resolution in exposure with a high energy beam. Since the swelling during development is suppressed, the line edge roughness is small, the residue after development is small, and the etching resistance is excellent. Therefore, since it has these characteristics, it is highly practical and suitable as a material for forming a fine pattern for VLSI manufacturing or photomask pattern creation.

  Here, specific examples of the monomer of the acid-eliminating ester having an oxygen atom represented by the general formulas (1a), (1a-1), and (1a-2) include the following. It is not limited to these.

（上記式中、Ｍｅはメチル基を、Ａｃはアセチル基を示す。）

(In the above formula, Me represents a methyl group, and Ac represents an acetyl group.)

  Next, an ester compound for obtaining a repeating unit having a substituted or unsubstituted alcohol having a fluorinated alkyl group or fluorine atom at the α-position represented by the general formulas (1b), (1c) and (1c-1) Examples of the monomer include the following.

（上記式中、Ｒ^１４、Ｒ^１９は前述の通りである。重合前のモノマーとしては、Ｒ^１４、Ｒ^１９と同じであっても、上記一部に挙げられるようにアセチル基であって、重合後のアルカリ加水分解によってヒドロキシ基にして、場合によってはその後ヒドロキシ基の水素原子を酸不安定基で置換しても良い。）

(In the above formula, R ¹⁴ and R ¹⁹ are as described above. The monomer before polymerization is the same as R ¹⁴ and R ^19, and is an acetyl group as mentioned above, The hydroxy group may be converted into a hydroxy group by alkali hydrolysis after polymerization, and in some cases, the hydrogen atom of the hydroxy group may be replaced with an acid labile group.

  The polymer compound of the present invention comprises a monomer of a (meth) acrylate ester of a specific acid labile group having an oxygen atom represented by general formulas (1a), (1a-1), and (1a-2), and a general formula It is characterized in that it is copolymerized with an ester compound monomer for obtaining a repeating unit having a substituted or unsubstituted alcohol having a fluorinated alkyl group or fluorine atom at the α-position shown in 1b and 1c, The ester monomer (1d) (repeating unit d) having an acid labile group other than formulas (1a), (1a-1) and (1a-2) can be copolymerized.

（ここで、Ｒ^１、Ｒ^２は前述の通り、Ｒ^２２は酸不安定基である。）

(Here, R ¹ and R ² are as described above, and R ²² is an acid labile group.)

Next, various acid labile groups represented by R ¹⁴ , R ¹⁹ and R ²² in the general formulas (1b), (1c), (1c-1) and (1d) are selected, but they are the same or not the same Or a hydrogen atom of a hydroxyl group of a hydroxyl group or a carboxyl group, particularly a group represented by the following formulas (AL10) and (AL11), a tertiary alkyl group having 4 to 40 carbon atoms represented by the following formula (AL12), The thing of the structure substituted by 4-20 oxoalkyl groups etc. is mentioned.

In formulas (AL10) and (AL11), R ⁵⁰⁶ and R ⁵⁰⁹ are each a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, and may contain heteroatoms such as oxygen, sulfur, nitrogen, and fluorine. Good. R ⁵⁰⁷ and R ⁵⁰⁸ are a hydrogen atom, a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, and may contain heteroatoms such as oxygen, sulfur, nitrogen, fluorine, and a5 is 0 to 10 Is an integer. R ⁵⁰⁷ and R ⁵⁰⁸ , R ⁵⁰⁷ and R ⁵⁰⁹ , and R ⁵⁰⁸ and R ⁵⁰⁹ may be bonded to form a ring.

  Specific examples of the compound represented by the formula (AL10) include a tert-butoxycarbonyl group, a tert-butoxycarbonylmethyl group, a tert-amyloxycarbonyl group, a tert-amyloxycarbonylmethyl group, and a 1-ethoxyethoxycarbonylmethyl group. , 2-tetrahydropyranyloxycarbonylmethyl group, 2-tetrahydrofuranyloxycarbonylmethyl group and the like, and substituents represented by the following general formulas (AL10) -1 to (AL10) -9.

In the above formulas (AL10) -1 to (AL10) -9, R ⁵¹⁴ is the same or non-identical linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, aryl group having 6 to 20 carbon atoms, An aralkyl group is shown. ^R515 does not exist or represents a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms. R ⁵¹⁶ represents an aryl group or aralkyl group having 6 to 20 carbon atoms.

  The acetal compounds represented by the general formula (AL11) are exemplified by the following general formulas (AL11) -1 to (AL11) -33.

  Further, the base resin may be intermolecularly or intramolecularly crosslinked by an acid labile group represented by the following general formula (AL-11a) or (AL-11b).

In the above formula, R ³³ and R ³⁴ represent a hydrogen atom or a linear, branched, or cyclic alkyl group having 1 to 8 carbon atoms. Alternatively, R ³³ and R ³⁴ may be bonded to form a ring, and when forming a ring, R ³³ and R ³⁴ represent a linear or branched alkylene group having 1 to 8 carbon atoms. R ³⁵ is a linear, branched or cyclic alkylene group having 1 to 10 carbon atoms, b5 and d5 are 0 or 1 to 10, preferably 0 or an integer of 1 to 5, and c5 is an integer of 1 to 7. . A represents a (c5 + 1) -valent aliphatic or alicyclic saturated hydrocarbon group having 1 to 50 carbon atoms, an aromatic hydrocarbon group, or a heterocyclic group, and these groups are heteroatoms such as O, S, and N. Or a part of hydrogen atoms bonded to the carbon atom may be substituted with a hydroxyl group, a carboxyl group, a carbonyl group, or a fluorine atom. B represents -CO-O-, -NHCO-O-, or -NHCONH-.

  In this case, A is preferably a divalent to tetravalent C1-C20 linear, branched, or cyclic alkylene group, an alkyltriyl group, an alkyltetrayl group, or an arylene group having 6 to 30 carbon atoms. These groups may have intervening heteroatoms such as O, S, N, etc., and some of the hydrogen atoms bonded to the carbon atoms are substituted by hydroxyl groups, carboxyl groups, acyl groups, halogen atoms. May be. C5 is preferably an integer of 1 to 3.

  Specific examples of the crosslinked acetal groups represented by the general formulas (AL-11a) and (AL-11b) include those represented by the following formulas (AL-11) -34 to (AL-11) -41.

  Next, examples of the tertiary alkyl group represented by the general formula (AL12) include a tert-butyl group, a triethylcarbyl group, a 1-ethylnorbornyl group, a 1-methylcyclohexyl group, a 1-ethylcyclopentyl group, 2- Examples include (2-methyl) adamantyl group, 2- (2-ethyl) adamantyl group, tert-amyl group, and the following general formulas (AL12) -1 to (AL12) -18.

In the above formula, R ⁵¹⁰ represents the same or non-identical linear, branched, or cyclic alkyl group having 1 to 8 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group. R ⁵¹¹ and R ⁵¹³ are not present or represent a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms. R ⁵¹² represents an aryl group or aralkyl group having 6 to 20 carbon atoms.

Furthermore, as shown in the following formulas (AL12) -19 and (AL12) -20, even if a bi- or higher valent alkylene group and an arylene group R ⁵¹⁴ are contained, the polymer molecule or between molecules may be crosslinked. good. In the following formulas (AL12) -19 and (AL12) -20, R ⁵¹⁰ is the same as described above, R ⁵¹⁴ is a linear, branched or cyclic alkylene group having 1 to 20 carbon atoms, an arylene group, an oxygen atom, Hetero atoms such as a sulfur atom and a nitrogen atom may be contained. b6 is an integer of 1 to 3.

Further, R ⁵¹⁰ , R ⁵¹¹ , R ⁵¹² , and R ⁵¹³ may have a heteroatom such as oxygen, nitrogen, or sulfur, and specifically, the compounds are represented by the following formulas (AL13) -1 to (AL13) -7. Can do.

  Here, as an ester having an acid labile group of the above formula (AL-12), an ester monomer for obtaining a repeating unit having an exo structure disclosed in JP-A-2000-327633 is copolymerized. I can do it. Specific examples include, but are not limited to, the following.

  The polymer material of the present invention essentially comprises a repeating unit represented by the general formula (1a) and a repeating unit represented by the general formula (1b) and / or (1c), but the general formula (1a), ( In addition to 1b) and (1c), repeating units having an adhesive group may be copolymerized. Specific examples of the repeating unit having an adhesive group include a repeating unit e obtained by polymerizing the monomer (1e) exemplified below.

  In the general formulas (1a), (1b), and (1c), the ratio of the repeating units a, b, and c is 0.1 ≦ a ≦ 0.8, 0 ≦ b ≦ 0.8, and 0 ≦ c ≦ 0.8. 0.05 ≦ b + c ≦ 0.8, preferably 0.15 ≦ a ≦ 0.7, 0 ≦ b ≦ 0.7, 0 ≦ c ≦ 0.7, 0.07 ≦ b + c ≦ 0.7 It is.

  Further, when the monomers (1d) and (1e) are copolymerized, the ratio of the repeating units d and e is 0 ≦ d / (a + b + c + d + e) ≦ 0.6, preferably 0 ≦ d / (a + b + c + d + e) ≦ 0.5. Yes, 0 ≦ e / (a + b + c + d + e) ≦ 0.8, preferably 0 ≦ e / (a + b + c + d + e) ≦ 0.7.

  The polymer compound of the present invention has a mass average molecular weight (measurement method is as described later) of 1,000 to 500,000, preferably 2,000 to 30,000. If the mass average molecular weight is too small, the resist material may be inferior in heat resistance. If the mass average molecular weight is too large, the alkali solubility may be reduced, and a trailing phenomenon may be likely to occur after pattern formation.

  Furthermore, in the polymer compound of the present invention, when the molecular weight distribution (Mw / Mn) is wide, a low molecular weight or high molecular weight polymer exists, so that after exposure, foreign matter is seen on the pattern or the pattern shape is There is a risk of getting worse. Therefore, since the influence of such molecular weight and molecular weight distribution tends to increase as the pattern rule becomes finer, in order to obtain a resist material suitably used for fine pattern dimensions, the multi-component copolymer to be used is obtained. The molecular weight distribution is preferably from 1.0 to 2.0, particularly preferably from 1.0 to 1.5 and narrow dispersion.

  It is also possible to blend two or more polymers having different composition ratios, molecular weight distributions, and molecular weights.

  In order to synthesize these polymer compounds, as one method, a monomer having an unsaturated bond for obtaining repeating units a, b and c, and further a monomer represented by repeating units d and e in an organic solvent, There is a method of carrying out heat polymerization by adding a radical initiator, whereby a polymer compound can be obtained. Examples of the organic solvent used at the time of polymerization include toluene, benzene, tetrahydrofuran, diethyl ether, dioxane and the like. As polymerization initiators, 2,2′-azobisisobutyronitrile (AIBN), 2,2′-azobis (2,4-dimethylvaleronitrile), dimethyl 2,2-azobis (2-methylpropionate) ), Benzoyl peroxide, lauroyl peroxide, and the like, preferably polymerized by heating to 50 to 80 ° C. The reaction time is 2 to 100 hours, preferably 5 to 20 hours. As the acid labile group, those introduced into the monomer may be used as they are, or the acid labile group may be removed once with an acid catalyst and then protected or partially protected.

  The positive resist material of the present invention includes an organic solvent, a compound that generates an acid in response to high energy rays (acid generator), a dissolution inhibitor, a basic compound, a surfactant, and other components as necessary. Can be contained.

  The organic solvent used in the resist material of the present invention, particularly the chemically amplified positive resist material, may be any organic solvent that can dissolve the base resin, acid generator, other additives, and the like. Examples of such organic solvents include ketones such as cyclohexanone and methyl-2-n-amyl ketone, 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxy- Alcohols such as 2-propanol, propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether, and other ethers, propylene glycol monomethyl ether acetate, propylene glycol monoethyl Ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, 3-ethoxy Examples include esters such as ethyl propionate, tert-butyl acetate, tert-butyl propionate, propylene glycol mono tert-butyl ether acetate, and lactones such as γ-butyl lactone, one of these alone or two or more However, the present invention is not limited to these. In the present invention, among these organic solvents, diethylene glycol dimethyl ether, 1-ethoxy-2-propanol, propylene glycol monomethyl ether acetate, and mixed solvents thereof, which have the highest solubility of the acid generator in the resist component, are preferably used. .

  The amount of the organic solvent used is preferably 200 to 1,000 parts, particularly 400 to 800 parts, with respect to 100 parts (parts by mass) of the base resin.

As an acid generator used in the positive resist material of the present invention,
i. An onium salt of the following general formula (P1a-1), (P1a-2) or (P1b),
ii. A diazomethane derivative of the following general formula (P2):
iii. A glyoxime derivative of the following general formula (P3):
iv. A bissulfone derivative of the following general formula (P4):
v. A sulfonic acid ester of an N-hydroxyimide compound of the following general formula (P5),
vi. β-ketosulfonic acid derivatives,
vii. Disulfone derivatives,
viii. Nitrobenzyl sulfonate derivatives,
ix. Examples thereof include sulfonic acid ester derivatives.

（式中、Ｒ^101a、Ｒ^101b、Ｒ^101cはそれぞれ炭素数１〜１２の直鎖状、分岐状、環状のアルキル基、アルケニル基、オキソアルキル基、オキソアルケニル基、炭素数６〜２０のアリール基、又は炭素数７〜１２のアラルキル基、アリールオキソアルキル基を示し、これらの基の水素原子の一部又は全部がアルコキシ基等によって置換されていてもよい。また、Ｒ^101bとＲ^101cとは環を形成してもよく、環を形成する場合には、Ｒ^101b、Ｒ^101cはそれぞれ炭素数１〜６のアルキレン基を示す。Ｋ^-は非求核性対向イオンを表す。）

Wherein R ^101a , R ^101b and R ^101c are each a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, an alkenyl group, an oxoalkyl group, an oxoalkenyl group or an aryl having 6 to 20 carbon atoms. Group, an aralkyl group having 7 to 12 carbon atoms, or an aryloxoalkyl group, and part or all of the hydrogen atoms of these groups may be substituted with an alkoxy group, etc. R ^101b and R ^{101c May} form a ring, and in the case of forming a ring, R ^101b and R ^101c each represent an alkylene group having 1 to 6 carbon atoms, and K ⁻ represents a non-nucleophilic counter ion.)

R ^101a , R ^101b and R ^101c may be the same as or different from each other. Specifically, as an alkyl group, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl Group, tert-butyl group, pentyl group, hexyl group, heptyl group, octyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclopropylmethyl group, 4-methylcyclohexyl group, cyclohexylmethyl group, norbornyl group, adamantyl group, etc. Is mentioned. Examples of the alkenyl group include a vinyl group, an allyl group, a propenyl group, a butenyl group, a hexenyl group, and a cyclohexenyl group. Examples of the oxoalkyl group include 2-oxocyclopentyl group, 2-oxocyclohexyl group, and the like. 2-oxopropyl group, 2-cyclopentyl-2-oxoethyl group, 2-cyclohexyl-2-oxoethyl group, 2- (4 -Methylcyclohexyl) -2-oxoethyl group and the like can be mentioned. Examples of the oxoalkenyl group include 2-oxo-4-cyclohexenyl group and 2-oxo-4-propenyl group. Examples of the aryl group include a phenyl group, a naphthyl group, a p-methoxyphenyl group, an m-methoxyphenyl group, an o-methoxyphenyl group, an ethoxyphenyl group, a p-tert-butoxyphenyl group, and an m-tert-butoxyphenyl group. Alkylphenyl groups such as alkoxyphenyl groups, 2-methylphenyl groups, 3-methylphenyl groups, 4-methylphenyl groups, ethylphenyl groups, 4-tert-butylphenyl groups, 4-butylphenyl groups, dimethylphenyl groups, etc. Alkyl naphthyl groups such as methyl naphthyl group and ethyl naphthyl group, alkoxy naphthyl groups such as methoxy naphthyl group and ethoxy naphthyl group, dialkyl naphthyl groups such as dimethyl naphthyl group and diethyl naphthyl group, dimethoxy naphthyl group and diethoxy naphthyl group Dialkoxynaphthyl group And the like. Examples of the aralkyl group include a benzyl group, a phenylethyl group, and a phenethyl group. As the aryloxoalkyl group, 2-aryl-2-oxoethyl group such as 2-phenyl-2-oxoethyl group, 2- (1-naphthyl) -2-oxoethyl group, 2- (2-naphthyl) -2-oxoethyl group and the like Groups and the like. Non-nucleophilic counter ions of K ⁻ include halide ions such as chloride ion and bromide ion, fluoroalkyl sulfonates such as triflate, 1,1,1-trifluoroethane sulfonate, and nonafluorobutane sulfonate, tosylate, and benzene sulfonate. And aryl sulfonates such as 4-fluorobenzene sulfonate and 1,2,3,4,5-pentafluorobenzene sulfonate, and alkyl sulfonates such as mesylate and butane sulfonate.

（式中、Ｒ^102a、Ｒ^102bはそれぞれ炭素数１〜８の直鎖状、分岐状、環状のアルキル基を示す。Ｒ¹⁰³は炭素数１〜１０の直鎖状、分岐状又は環状のアルキレン基を示す。Ｒ^104a、Ｒ^104bはそれぞれ炭素数３〜７の２−オキソアルキル基を示す。Ｋ⁻は非求核性対向イオンを表す。）

(Wherein R ^102a and R ^102b each represent a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms. R ¹⁰³ is a linear, branched or cyclic alkylene having 1 to 10 carbon atoms. R ^104a and R ^104b each represent a 2-oxoalkyl group having 3 to 7 carbon atoms, and K ⁻ represents a non-nucleophilic counter ion.)

Specific examples of R ^102a and R ^102b include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, a pentyl group, a hexyl group, a heptyl group, and an octyl group. , Cyclopentyl group, cyclohexyl group, cyclopropylmethyl group, 4-methylcyclohexyl group, cyclohexylmethyl group and the like. R ¹⁰³ is methylene group, ethylene group, propylene group, butylene group, pentylene group, hexylene group, heptylene group, octylene group, nonylene group, 1,4-cyclohexylene group, 1,2-cyclohexylene. Group, 1,3-cyclopentylene group, 1,4-cyclooctylene group, 1,4-cyclohexanedimethylene group and the like. ^{Examples of} R ^104a and R ^104b include a 2-oxopropyl group, a 2-oxocyclopentyl group, a 2-oxocyclohexyl group, and a 2-oxocycloheptyl group. K ^- is can be exemplified the same ones as described in the formulas (P1a-1) and (P1a-2).

（式中、Ｒ¹⁰⁵、Ｒ¹⁰⁶は炭素数１〜１２の直鎖状、分岐状、環状のアルキル基又はハロゲン化アルキル基、炭素数６〜２０のアリール基又はハロゲン化アリール基、炭素数７〜１２のアラルキル基を示す。）

Wherein R ¹⁰⁵ and R ¹⁰⁶ are linear, branched or cyclic alkyl groups or halogenated alkyl groups having 1 to 12 carbon atoms, aryl groups or halogenated aryl groups having 6 to 20 carbon atoms, or 7 carbon atoms. Represents -12 aralkyl groups.)

^Examples of the alkyl group of R ¹⁰⁵ and R ¹⁰⁶ include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, heptyl group, octyl group, amyl Group, cyclopentyl group, cyclohexyl group, cycloheptyl group, norbornyl group, adamantyl group and the like. Examples of the halogenated alkyl group for R ¹⁰⁵ and R ¹⁰⁶ include a trifluoromethyl group, a 1,1,1-trifluoroethyl group, a 1,1,1-trichloroethyl group, a nonafluorobutyl group, and the like. As the aryl group for R ¹⁰⁵ and R ^106, a phenyl group, a p-methoxyphenyl group, an m-methoxyphenyl group, an o-methoxyphenyl group, an ethoxyphenyl group, a p-tert-butoxyphenyl group, and an m-tert-butoxyphenyl group Alkylphenyl groups such as alkoxyphenyl groups, 2-methylphenyl groups, 3-methylphenyl groups, 4-methylphenyl groups, ethylphenyl groups, 4-tert-butylphenyl groups, 4-butylphenyl groups, dimethylphenyl groups, etc. Is mentioned. Examples of the halogenated aryl group for R ¹⁰⁵ and R ¹⁰⁶ include a fluorophenyl group, a chlorophenyl group, and 1,2,3,4,5-pentafluorophenyl group. ^Examples of the aralkyl group for R ¹⁰⁵ and R ¹⁰⁶ include a benzyl group and a phenethyl group.

（式中、Ｒ¹⁰⁷、Ｒ¹⁰⁸、Ｒ¹⁰⁹は炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基又はハロゲン化アルキル基、炭素数６〜２０のアリール基又はハロゲン化アリール基、炭素数７〜１２のアラルキル基を示す。Ｒ¹⁰⁸、Ｒ¹⁰⁹は互いに結合して環状構造を形成してもよく、環状構造を形成する場合、Ｒ¹⁰⁸、Ｒ¹⁰⁹はそれぞれ炭素数１〜６の直鎖状、分岐状のアルキレン基を示す。Ｒ¹⁰⁵はＰ２式のものと同様である。）

(Wherein R ¹⁰⁷ , R ¹⁰⁸ and R ¹⁰⁹ are each a linear, branched or cyclic alkyl group or halogenated alkyl group having 1 to 12 carbon atoms, an aryl group or halogenated aryl group having 6 to 20 carbon atoms, An aralkyl group having 7 to 12 carbon atoms, R ¹⁰⁸ and R ¹⁰⁹ may be bonded to each other to form a cyclic structure, and in the case of forming a cyclic structure, R ¹⁰⁸ and R ¹⁰⁹ each have 1 to 6 carbon atoms; A linear or branched alkylene group, R ¹⁰⁵ is the same as in formula P2.)

Examples of the alkyl group, halogenated alkyl group, aryl group, halogenated aryl group, and aralkyl group of R ¹⁰⁷ , R ¹⁰⁸ , and R ¹⁰⁹ include the same groups as those described for R ¹⁰⁵ and R ¹⁰⁶ . ^Examples of the alkylene group for R ¹⁰⁸ and R ¹⁰⁹ include a methylene group, an ethylene group, a propylene group, a butylene group, and a hexylene group.

（式中、R^１０１ａ、Ｒ^１０１ｂは前記と同様である。）

(Wherein, R ^101a and R ^101b are the same as described above.)

（式中、Ｒ¹¹⁰は炭素数６〜１０のアリーレン基、炭素数１〜６のアルキレン基又は炭素数２〜６のアルケニレン基を示し、これらの基の水素原子の一部又は全部は更に炭素数１〜４の直鎖状又は分岐状のアルキル基又はアルコキシ基、ニトロ基、アセチル基、又はフェニル基で置換されていてもよい。Ｒ¹¹¹は炭素数１〜８の直鎖状、分岐状又は置換のアルキル基、アルケニル基又はアルコキシアルキル基、フェニル基、又はナフチル基を示し、これらの基の水素原子の一部又は全部は更に炭素数１〜４のアルキル基又はアルコキシ基；炭素数１〜４のアルキル基、アルコキシ基、ニトロ基又はアセチル基で置換されていてもよいフェニル基；炭素数３〜５のヘテロ芳香族基；又は塩素原子、フッ素原子で置換されていてもよい。）

(In the formula, R ¹¹⁰ represents an arylene group having 6 to 10 carbon atoms, an alkylene group having 1 to 6 carbon atoms, or an alkenylene group having 2 to 6 carbon atoms, and some or all of the hydrogen atoms of these groups are further carbon atoms. It may be substituted with a linear or branched alkyl group or alkoxy group having 1 to 4 carbon atoms, a nitro group, an acetyl group, or a phenyl group, and R ¹¹¹ is a linear or branched chain having 1 to 8 carbon atoms. Or a substituted alkyl group, an alkenyl group or an alkoxyalkyl group, a phenyl group, or a naphthyl group, and part or all of the hydrogen atoms of these groups are further an alkyl group or alkoxy group having 1 to 4 carbon atoms; A phenyl group which may be substituted with an alkyl group of 4 to 4, an alkoxy group, a nitro group or an acetyl group; a heteroaromatic group having 3 to 5 carbon atoms; or a phenyl group which may be substituted with a chlorine atom or a fluorine atom.

Here, as the arylene group of R ¹¹⁰ , 1,2-phenylene group, 1,8-naphthylene group, etc., and as the alkylene group, methylene group, ethylene group, trimethylene group, tetramethylene group, phenylethylene group, norbornane Examples of the alkenylene group such as -2,3-diyl group include 1,2-vinylene group, 1-phenyl-1,2-vinylene group, 5-norbornene-2,3-diyl group and the like. The alkyl group for R ¹¹¹ is the same as R ^{101a to} R ^101c, and the alkenyl group is a vinyl group, 1-propenyl group, allyl group, 1-butenyl group, 3-butenyl group, isoprenyl group, 1- Pentenyl group, 3-pentenyl group, 4-pentenyl group, dimethylallyl group, 1-hexenyl group, 3-hexenyl group, 5-hexenyl group, 1-heptenyl group, 3-heptenyl group, 6-heptenyl group, 7-octenyl Groups such as alkoxyalkyl groups include methoxymethyl, ethoxymethyl, propoxymethyl, butoxymethyl, pentyloxymethyl, hexyloxymethyl, heptyloxymethyl, methoxyethyl, ethoxyethyl, Propoxyethyl, butoxyethyl, pentyloxyethyl, hexyloxyethyl, methoxypro Group, ethoxypropyl group, propoxypropyl group, butoxy propyl group, methoxybutyl group, ethoxybutyl group, propoxybutyl group, a methoxy pentyl group, an ethoxy pentyl group, a methoxy hexyl group, a methoxy heptyl group.

  In addition, examples of the optionally substituted alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and a tert-butyl group. As the alkoxy group of ˜4, a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group, a tert-butoxy group and the like are an alkyl group having 1 to 4 carbon atoms, an alkoxy group, and a nitro group. As the phenyl group which may be substituted with an acetyl group, a phenyl group, a tolyl group, a p-tert-butoxyphenyl group, a p-acetylphenyl group, a p-nitrophenyl group, etc. are heterocycles having 3 to 5 carbon atoms. Examples of the aromatic group include a pyridyl group and a furyl group.

  Specific examples of the acid generator include onium salts such as diphenyliodonium trifluoromethanesulfonate, phenyliodonium trifluoromethanesulfonate (p-tert-butoxyphenyl), diphenyliodonium p-toluenesulfonate, and p-toluenesulfone. Acid (p-tert-butoxyphenyl) phenyliodonium, triphenylsulfonium trifluoromethanesulfonate, trifluoromethanesulfonic acid (p-tert-butoxyphenyl) diphenylsulfonium, bis (p-tert-butoxyphenyl) phenylsulfonium trifluoromethanesulfonate , Tris (p-tert-butoxyphenyl) sulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate p-toluenesulfonic acid (p-tert-butoxyphenyl) diphenylsulfonium, p-toluenesulfonic acid bis (p-tert-butoxyphenyl) phenylsulfonium, p-toluenesulfonic acid tris (p-tert-butoxyphenyl) sulfonium, nona Triphenylsulfonium fluorobutanesulfonate, triphenylsulfonium butanesulfonate, trimethylsulfonium trifluoromethanesulfonate, trimethylsulfonium p-toluenesulfonate, cyclohexylmethyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate, cyclohexyl p-toluenesulfonate Methyl (2-oxocyclohexyl) sulfonium, dimethylphenylsulfonium trifluoromethanesulfonate, -Toluenesulfonic acid dimethylphenylsulfonium, trifluoromethanesulfonic acid dicyclohexylphenylsulfonium, p-toluenesulfonic acid dicyclohexylphenylsulfonium, trifluoromethanesulfonic acid trinaphthylsulfonium, trifluoromethanesulfonic acid (2-norbornyl) methyl (2-oxocyclohexyl) sulfonium And onium salts such as ethylenebis [methyl (2-oxocyclopentyl) sulfonium trifluoromethanesulfonate] and 1,2′-naphthylcarbonylmethyltetrahydrothiophenium triflate.

  Diazomethane derivatives include bis (benzenesulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (xylenesulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (cyclopentylsulfonyl) diazomethane, bis (n-butylsulfonyl) diazomethane Bis (isobutylsulfonyl) diazomethane, bis (sec-butylsulfonyl) diazomethane, bis (n-propylsulfonyl) diazomethane, bis (isopropylsulfonyl) diazomethane, bis (tert-butylsulfonyl) diazomethane, bis (n-amylsulfonyl) diazomethane Bis (isoamylsulfonyl) diazomethane, bis (sec-amylsulfonyl) diazomethane, bis (tert-amylsulfur) Nyl) diazomethane, 1-cyclohexylsulfonyl-1- (tert-butylsulfonyl) diazomethane, 1-cyclohexylsulfonyl-1- (tert-amylsulfonyl) diazomethane, 1-tert-amylsulfonyl-1- (tert-butylsulfonyl) diazomethane And the like.

  Examples of glyoxime derivatives include bis-O- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-O- (p-toluenesulfonyl) -α-diphenylglyoxime, bis-O- (p-toluenesulfonyl)- α-dicyclohexylglyoxime, bis-O- (p-toluenesulfonyl) -2,3-pentanedione glyoxime, bis-O- (p-toluenesulfonyl) -2-methyl-3,4-pentanedione glyoxime, Bis-O- (n-butanesulfonyl) -α-dimethylglyoxime, bis-O- (n-butanesulfonyl) -α-diphenylglyoxime, bis-O- (n-butanesulfonyl) -α-dicyclohexylglyoxime Bis-O- (n-butanesulfonyl) -2,3-pentanedione glyoxime, bis-O- ( -Butanesulfonyl) -2-methyl-3,4-pentanedione glyoxime, bis-O- (methanesulfonyl) -α-dimethylglyoxime, bis-O- (trifluoromethanesulfonyl) -α-dimethylglyoxime, bis -O- (1,1,1-trifluoroethanesulfonyl) -α-dimethylglyoxime, bis-O- (tert-butanesulfonyl) -α-dimethylglyoxime, bis-O- (perfluorooctanesulfonyl)- α-dimethylglyoxime, bis-O- (cyclohexanesulfonyl) -α-dimethylglyoxime, bis-O- (benzenesulfonyl) -α-dimethylglyoxime, bis-O- (p-fluorobenzenesulfonyl) -α- Dimethylglyoxime, bis-O- (p-tert-butylbenzenesulfonyl) α- dimethylglyoxime, bis -O- (xylene sulfonyl)-.alpha.-dimethylglyoxime, and bis -O- (camphorsulfonyl)-.alpha.-glyoxime derivatives such as dimethylglyoxime.

  Examples of bissulfone derivatives include bisnaphthylsulfonylmethane, bistrifluoromethylsulfonylmethane, bismethylsulfonylmethane, bisethylsulfonylmethane, bispropylsulfonylmethane, bisisopropylsulfonylmethane, bis-p-toluenesulfonylmethane, and bisbenzenesulfonylmethane. Bissulfone derivatives can be mentioned.

Examples of β-ketosulfone derivatives include β-ketosulfone derivatives such as 2-cyclohexylcarbonyl-2- (p-toluenesulfonyl) propane and 2-isopropylcarbonyl-2- (p-toluenesulfonyl) propane.
Examples of the disulfone derivative include disulfone derivatives such as diphenyl disulfone derivatives and dicyclohexyl disulfone derivatives.

  Examples of the nitrobenzyl sulfonate derivative include nitrobenzyl sulfonate derivatives such as 2,6-dinitrobenzyl p-toluenesulfonate and 2,4-dinitrobenzyl p-toluenesulfonate.

  Examples of sulfonic acid ester derivatives include 1,2,3-tris (methanesulfonyloxy) benzene, 1,2,3-tris (trifluoromethanesulfonyloxy) benzene, 1,2,3-tris (p-toluenesulfonyloxy). Mention may be made of sulfonic acid ester derivatives such as benzene.

  Examples of the sulfonic acid ester derivative of the N-hydroxyimide compound include N-hydroxysuccinimide methanesulfonic acid ester, N-hydroxysuccinimide trifluoromethanesulfonic acid ester, N-hydroxysuccinimide ethanesulfonic acid ester, and N-hydroxysuccinimide 1-propane. Sulfonic acid ester, N-hydroxysuccinimide 2-propanesulfonic acid ester, N-hydroxysuccinimide 1-pentanesulfonic acid ester, N-hydroxysuccinimide 1-octanesulfonic acid ester, N-hydroxysuccinimide p-toluenesulfonic acid ester, N- Hydroxysuccinimide p-methoxybenzenesulfonic acid ester, N-hydroxysuccinimide 2-chloroethanesulfonic acid ester Ter, N-hydroxysuccinimide benzene sulfonate, N-hydroxy succinimide-2,4,6-trimethylbenzene sulfonate, N-hydroxy succinimide 1-naphthalene sulfonate, N-hydroxy succinimide 2-naphthalene sulfonate, N-hydroxy-2-phenylsuccinimide methanesulfonate, N-hydroxymaleimide methanesulfonate, N-hydroxymaleimide ethanesulfonate, N-hydroxy-2-phenylmaleimide methanesulfonate, N-hydroxyglutarimide methane Sulfonic acid ester, N-hydroxyglutarimide benzenesulfonic acid ester, N-hydroxyphthalimide methanesulfonic acid ester, N- Droxyphthalimidobenzenesulfonic acid ester, N-hydroxyphthalimide trifluoromethanesulfonic acid ester, N-hydroxyphthalimide p-toluenesulfonic acid ester, N-hydroxynaphthalimide methanesulfonic acid ester, N-hydroxynaphthalimide benzenesulfonic acid ester, N -Hydroxy-5-norbornene-2,3-dicarboximide methanesulfonate, N-hydroxy-5-norbornene-2,3-dicarboximide trifluoromethanesulfonate, N-hydroxy-5-norbornene-2, Examples thereof include sulfonic acid ester derivatives of N-hydroxyimide compounds such as 3-dicarboximide p-toluenesulfonic acid ester.

In particular, triphenylsulfonium trifluoromethanesulfonate, trifluoromethanesulfonate (p-tert-butoxyphenyl) diphenylsulfonium, tris (p-tert-butoxyphenyl) sulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate, p -Toluenesulfonic acid (p-tert-butoxyphenyl) diphenylsulfonium, p-toluenesulfonic acid tris (p-tert-butoxyphenyl) sulfonium, trifluoromethanesulfonic acid trinaphthylsulfonium, trifluoromethanesulfonic acid cyclohexylmethyl (2-oxocyclohexyl) ) Sulfonium, (2-norbornyl) methyl (2-oxocyclohexyl) sulfonyl trifluoromethanesulfonate , 1,2'-naphthyl carbonyl methyl tetrahydrothiophenium triflate onium salts such as,
Bis (benzenesulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (n-butylsulfonyl) diazomethane, bis (isobutylsulfonyl) diazomethane, bis (sec-butylsulfonyl) diazomethane, bis ( diazomethane derivatives such as n-propylsulfonyl) diazomethane, bis (isopropylsulfonyl) diazomethane, bis (tert-butylsulfonyl) diazomethane,
Glyoxime derivatives such as bis-O- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-O- (n-butanesulfonyl) -α-dimethylglyoxime,
Bissulfone derivatives such as bisnaphthylsulfonylmethane,
N-hydroxysuccinimide methanesulfonic acid ester, N-hydroxysuccinimide trifluoromethanesulfonic acid ester, N-hydroxysuccinimide 1-propanesulfonic acid ester, N-hydroxysuccinimide 2-propanesulfonic acid ester, N-hydroxysuccinimide 1-pentanesulfonic acid A sulfonic acid ester derivative of an N-hydroxyimide compound such as an ester, N-hydroxysuccinimide p-toluenesulfonic acid ester, N-hydroxynaphthalimide methanesulfonic acid ester, or N-hydroxynaphthalimide benzenesulfonic acid ester is preferably used.

  In addition, the said acid generator can be used individually by 1 type or in combination of 2 or more types. Since onium salts are excellent in rectangularity improving effect and diazomethane derivatives and glyoxime derivatives are excellent in standing wave reducing effect, it is possible to finely adjust the profile by combining both.

  The addition amount of the acid generator is preferably 0.1 to 50 parts, more preferably 0.5 to 40 parts, with respect to 100 parts (parts by mass) of the base resin. If the amount is less than 0.1 part, the amount of acid generated during exposure is small and the sensitivity and resolution may be inferior. If the amount exceeds 50 parts, the transmittance of the resist may be lowered and the resolution may be inferior.

  Next, as a dissolution inhibitor (dissolution control agent) blended in the positive resist material of the present invention, particularly a chemically amplified positive resist material, the average molecular weight is 100 to 1,000, preferably 150 to 800, And the compound which substituted the hydrogen atom of this phenolic hydroxyl group of the compound which has two or more phenolic hydroxyl groups in a molecule | numerator by the acid labile group as a whole in the ratio of 0-100 mol% on the whole, or the compound which has a carboxy group in a molecule | numerator The compound which substituted the hydrogen atom of this carboxy group with the acid labile group as a whole in the ratio of 50-100 mol% on the whole is mix | blended.

The substitution rate of the hydrogen atom of the phenolic hydroxyl group by an acid labile group is on average 0 mol% or more, preferably 30 mol% or more of the entire phenolic hydroxyl group, and the upper limit is 100 mol%, more preferably 80 mol. %. The substitution rate of the hydrogen atom of the carboxy group with an acid labile group is 50 mol% or more, preferably 70 mol% or more of the entire carboxy group on average, and the upper limit is 100 mol%.
In this case, as the compound having two or more phenolic hydroxyl groups or the compound having a carboxy group, those represented by the following formulas (D1) to (D14) are preferable.

However, R ^<201> , R ^<202> shows a hydrogen atom or a C1-C8 linear or branched alkyl group or alkenyl group, respectively. R ²⁰³ represents a hydrogen atom, a linear or branched alkyl group or alkenyl group having 1 to 8 carbon atoms, or — (R ²⁰⁷ ) _h COOH. R ²⁰⁴ is _{- (CH 2) i - (} i = 2~10), shows an arylene group having 6 to 10 carbon atoms, a carbonyl group, a sulfonyl group, an oxygen atom or a sulfur atom. R ²⁰⁵ represents an alkylene group having 1 to 10 carbon atoms, an arylene group having 6 to 10 carbon atoms, a carbonyl group, a sulfonyl group, an oxygen atom or a sulfur atom. R ²⁰⁶ represents a hydrogen atom, a linear or branched alkyl group having 1 to 8 carbon atoms, an alkenyl group, or a phenyl group or naphthyl group each substituted with a hydroxyl group. R ²⁰⁷ represents a linear or branched alkylene group having 1 to 10 carbon atoms. R ²⁰⁸ represents a hydrogen atom or a hydroxyl group. j is an integer of 0-5. u and h are 0 or 1. s, t, s ′, t ′, s ″, t ″ satisfy s + t = 8, s ′ + t ′ = 5, s ″ + t ″ = 4, respectively, and at least 1 in each phenyl skeleton The number has two hydroxyl groups. α is a number that makes the molecular weight of the compounds of formulas (D8) and (D9) 100 to 1,000.

  The above compound has a mass average molecular weight of 100 to 1,000, preferably 150 to 800. The blending amount of the dissolution inhibitor is 0 to 50 parts by mass, preferably 5 to 50 parts by mass, more preferably 10 to 30 parts by mass with respect to 100 parts by mass of the base resin. Can be used. If the blending amount is small, the resolution may not be improved. If the blending amount is too large, the pattern film is reduced and the resolution tends to decrease.

Furthermore, a basic compound can be blended with the positive resist material of the present invention, particularly with the chemically amplified positive resist material.
As the basic compound, a compound capable of suppressing the diffusion rate when the acid generated from the acid generator diffuses into the resist film is suitable. By adding a basic compound, the acid diffusion rate in the resist film is suppressed and resolution is improved, sensitivity change after exposure is suppressed, and substrate and environment dependency is reduced, and exposure margin and pattern profile are reduced. Etc. can be improved.

  Examples of such basic compounds include primary, secondary, and tertiary aliphatic amines, hybrid amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxy group, and sulfonyl groups. A nitrogen-containing compound having a hydroxyl group, a nitrogen-containing compound having a hydroxyl group, a nitrogen-containing compound having a hydroxyphenyl group, an alcoholic nitrogen-containing compound, an amide derivative, an imide derivative, and the like.

  Specifically, primary aliphatic amines include ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert- Amylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, etc. are exemplified as secondary aliphatic amines. Dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, disi Lopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine, N, N-dimethylmethylenediamine, N, N-dimethylethylenediamine, N, N-dimethyltetraethylenepenta Examples of tertiary aliphatic amines include trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, and tripentylamine. , Tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, Examples include cetylamine, N, N, N ′, N′-tetramethylmethylenediamine, N, N, N ′, N′-tetramethylethylenediamine, N, N, N ′, N′-tetramethyltetraethylenepentamine and the like. Is done.

  Examples of hybrid amines include dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, and benzyldimethylamine.

  Specific examples of aromatic amines and heterocyclic amines include aniline derivatives (eg, aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N, N-dimethylaniline, 2-methylaniline, 3- Methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5- Dinitroaniline, N, N-dimethyltoluidine, etc.), diphenyl (p-tolyl) amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole derivatives (eg pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dim Lupyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, etc.), oxazole derivatives (eg oxazole, isoxazole etc.), thiazole derivatives (eg thiazole, isothiazole etc.), imidazole derivatives (eg imidazole, 4-methylimidazole, 4 -Methyl-2-phenylimidazole, etc.), pyrazole derivatives, furazane derivatives, pyrroline derivatives (eg pyrroline, 2-methyl-1-pyrroline etc.), pyrrolidine derivatives (eg pyrrolidine, N-methylpyrrolidine, pyrrolidinone, N-methylpyrrolidone etc.) ), Imidazoline derivatives, imidazolidine derivatives, pyridine derivatives (eg pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4- (1-butylpentyl) pyridine, dimethyl) Lysine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridone, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine, 2- (1-ethylpropyl) pyridine, aminopyridine, dimethylaminopyridine, etc.), pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine Derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoline derivatives, quinoline derivatives (eg quinoline, 3-quinoline carbo Nitriles), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine Examples include derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives and the like.

  Furthermore, examples of the nitrogen-containing compound having a carboxy group include aminobenzoic acid, indolecarboxylic acid, amino acid derivatives (eg, nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine , Phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, methoxyalanine) and the like, and examples of the nitrogen-containing compound having a sulfonyl group include 3-pyridinesulfonic acid, pyridinium p-toluenesulfonate, and the like. Nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, and alcoholic nitrogen-containing compounds include 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, and 3-indolemethanol. Drate, monoethanolamine, diethanolamine, triethanolamine, N-ethyldiethanolamine, N, N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol 4-amino-1-butanol, 4- (2-hydroxyethyl) morpholine, 2- (2-hydroxyethyl) pyridine, 1- (2-hydroxyethyl) piperazine, 1- [2- (2-hydroxyethoxy) Ethyl] piperazine, piperidineethanol, 1- (2-hydroxyethyl) pyrrolidine, 1- (2-hydroxyethyl) -2-pyrrolidinone, 3-piperidino-1,2-propanediol, 3-pyrrolidino-1,2-propane Diol, 8-hydroxyuroli , 3-cuincridinol, 3-tropanol, 1-methyl-2-pyrrolidineethanol, 1-aziridineethanol, N- (2-hydroxyethyl) phthalimide, N- (2-hydroxyethyl) isonicotinamide, etc. Illustrated.

Examples of amide derivatives include formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, propionamide, benzamide and the like.
Examples of imide derivatives include phthalimide, succinimide, maleimide and the like.

Furthermore, 1 type, or 2 or more types chosen from the basic compound shown by the following general formula (B) -1 can also be added.
N (X) _n (Y) _3-n (B) -1
(In the above formula, n = 1, 2, 3. The side chain X may be the same or different and can be represented by the following general formulas (X) -1 to (X) -3. Side chain Y Represents the same or different hydrogen atom or a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, and may contain an ether group or a hydroxyl group, and Xs are bonded to form a ring. You may do it.)

Here, R ³⁰⁰ , R ³⁰² , and R ³⁰⁵ are linear or branched alkylene groups having 1 to 4 carbon atoms, and R ³⁰¹ and R ³⁰⁴ are hydrogen atoms, linear or branched structures having 1 to 20 carbon atoms. And a cyclic alkyl group, which may contain one or a plurality of hydroxy groups, ether groups, ester groups, and lactone rings.
R ³⁰³ is a single bond, a linear or branched alkylene group having 1 to 4 carbon atoms, R ³⁰⁶ is a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, a hydroxy group, One or a plurality of ether, ester groups and lactone rings may be contained.

Specific examples of the compound represented by formula (B) -1 are given below.
Tris (2-methoxymethoxyethyl) amine, tris {2- (2-methoxyethoxy) ethyl} amine, tris {2- (2-methoxyethoxymethoxy) ethyl} amine, tris {2- (1-methoxyethoxy) ethyl } Amine, Tris {2- (1-ethoxyethoxy) ethyl} amine, Tris {2- (1-ethoxypropoxy) ethyl} amine, Tris [2- {2- (2-hydroxyethoxy) ethoxy} ethyl] amine, 4,7,13,16,21,24-hexaoxa-1,10-diazabicyclo [8.8.8] hexacosane, 4,7,13,18-tetraoxa-1,10-diazabicyclo [8.5.5] Eicosane, 1,4,10,13-tetraoxa-7,16-diazabicyclooctadecane, 1-aza-12-crown-4 1-aza-15-crown-5, 1-aza-18-crown-6, tris (2-formyloxyethyl) amine, tris (2-formyloxyethyl) amine, tris (2-acetoxyethyl) amine, Tris (2-propionyloxyethyl) amine, tris (2-butyryloxyethyl) amine, tris (2-isobutyryloxyethyl) amine, tris (2-valeryloxyethyl) amine, tris (2-pivalo) Yloxyethyl) amine, N, N-bis (2-acetoxyethyl) 2- (acetoxyacetoxy) ethylamine, tris (2-methoxycarbonyloxyethyl) amine, tris (2-tert-butoxycarbonyloxyethyl) amine, tris [2- (2-Oxopropoxy) ethyl] amine, tris [2- (mes Xycarbonylmethyl) oxyethyl] amine, tris [2- (tert-butoxycarbonylmethyloxy) ethyl] amine, tris [2- (cyclohexyloxycarbonylmethyloxy) ethyl] amine, tris (2-methoxycarbonylethyl) amine, tris (2-ethoxycarbonylethyl) amine, N, N-bis (2-hydroxyethyl) 2- (methoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (methoxycarbonyl) ethylamine, N, N -Bis (2-hydroxyethyl) 2- (ethoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (ethoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2- (2 -Methoxyethoxycarbonyl) ethyl Amine, N, N-bis (2-acetoxyethyl) 2- (2-methoxyethoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2- (2-hydroxyethoxycarbonyl) ethylamine, N, N- Bis (2-acetoxyethyl) 2- (2-acetoxyethoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2-[(methoxycarbonyl) methoxycarbonyl] ethylamine, N, N-bis (2-acetoxy) Ethyl) 2-[(methoxycarbonyl) methoxycarbonyl] ethylamine, N, N-bis (2-hydroxyethyl) 2- (2-oxopropoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- ( 2-oxopropoxycarbonyl) ethylamine, N, N-bis (2- Droxyethyl) 2- (tetrahydrofurfuryloxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (tetrahydrofurfuryloxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2-[( 2-oxotetrahydrofuran-3-yl) oxycarbonyl] ethylamine, N, N-bis (2-acetoxyethyl) 2-[(2-oxotetrahydrofuran-3-yl) oxycarbonyl] ethylamine, N, N-bis (2 -Hydroxyethyl) 2- (4-hydroxybutoxycarbonyl) ethylamine, N, N-bis (2-formyloxyethyl) 2- (4-formyloxybutoxycarbonyl) ethylamine, N, N-bis (2-formyloxyethyl) ) 2- (2-Formyloxyethoxy) Rubonyl) ethylamine, N, N-bis (2-methoxyethyl) 2- (methoxycarbonyl) ethylamine, N- (2-hydroxyethyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (2-acetoxyethyl) ) Bis [2- (methoxycarbonyl) ethyl] amine, N- (2-hydroxyethyl) bis [2- (ethoxycarbonyl) ethyl] amine, N- (2-acetoxyethyl) bis [2- (ethoxycarbonyl) ethyl ], N- (3-hydroxy-1-propyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (3-acetoxy-1-propyl) bis [2- (methoxycarbonyl) ethyl] amine, N -(2-methoxyethyl) bis [2- (methoxycarbonyl) ethyl] amine, N-butylbis [2- ( Methoxycarbonyl) ethyl] amine, N-butylbis [2- (2-methoxyethoxycarbonyl) ethyl] amine, N-methylbis (2-acetoxyethyl) amine, N-ethylbis (2-acetoxyethyl) amine, N-methylbis ( 2-pivaloyloxyethyl) amine, N-ethylbis [2- (methoxycarbonyloxy) ethyl] amine, N-ethylbis [2- (tert-butoxycarbonyloxy) ethyl] amine, tris (methoxycarbonylmethyl) amine, Examples include, but are not limited to, tris (ethoxycarbonylmethyl) amine, N-butylbis (methoxycarbonylmethyl) amine, N-hexylbis (methoxycarbonylmethyl) amine, β- (diethylamino) -δ-valerolactone, and the like.

  Furthermore, 1 type, or 2 or more types of the basic compound which has the cyclic structure shown by the following general formula (B) -2 can also be added.

（式中、Ｘは前述の通り、Ｒ^３０７は炭素数２〜２０の直鎖状、分岐状のアルキレン基であり、カルボニル基、エーテル基、エステル基、スルフィドを１個あるいは複数個含んでいても良い。）

(In the formula, as described above, R ³⁰⁷ is a linear or branched alkylene group having 2 to 20 carbon atoms and contains one or more carbonyl groups, ether groups, ester groups and sulfides. Is also good.)

  (B) -2 is specifically 1- [2- (methoxymethoxy) ethyl] pyrrolidine, 1- [2- (methoxymethoxy) ethyl] piperidine, 4- [2- (methoxymethoxy) ethyl] morpholine, 1- [2-[(2-methoxyethoxy) methoxy] ethyl] pyrrolidine, 1- [2-[(2-methoxyethoxy) methoxy] ethyl] piperidine, 4- [2-[(2-methoxyethoxy) methoxy] Ethyl] morpholine, 2- (1-pyrrolidinyl) ethyl acetate, 2-piperidinoethyl acetate, 2-morpholinoethyl acetate, 2- (1-pyrrolidinyl) ethyl formate, 2-piperidinoethyl propionate, 2-morpholinoethyl acetoxyacetate, methoxyacetic acid 2- (1-pyrrolidinyl) ethyl, 4- [2- (methoxycarbonyloxy) ethyl] morpholine 1- [2- (t-butoxycarbonyloxy) ethyl] piperidine, 4- [2- (2-methoxyethoxycarbonyloxy) ethyl] morpholine, methyl 3- (1-pyrrolidinyl) propionate, 3-piperidinopropion Acid methyl, methyl 3-morpholinopropionate, methyl 3- (thiomorpholino) propionate, methyl 2-methyl-3- (1-pyrrolidinyl) propionate, ethyl 3-morpholinopropionate, methoxy 3-piperidinopropionate Carbonylmethyl, 2-hydroxyethyl 3- (1-pyrrolidinyl) propionate, 2-acetoxyethyl 3-morpholinopropionate, 2-oxotetrahydrofuran-3-yl 3- (1-pyrrolidinyl) propionate, 3-morpholinopropionic acid Tetrahydrofurfuryl, 3- Glycidyl peridinopropionate, 2-methoxyethyl 3-morpholinopropionate, 2- (2-methoxyethoxy) ethyl 3- (1-pyrrolidinyl) propionate, butyl 3-morpholinopropionate, cyclohexyl 3-piperidinopropionate , Α- (1-pyrrolidinyl) methyl-γ-butyrolactone, β-piperidino-γ-butyrolactone, β-morpholino-δ-valerolactone, methyl 1-pyrrolidinyl acetate, methyl piperidinoacetate, methyl morpholinoacetate, methyl thiomorpholinoacetate, Examples include ethyl 1-pyrrolidinyl acetate and 2-methoxyethyl morpholinoacetate.

  Furthermore, a basic compound containing a cyano group represented by general formulas (B) -3 to (B) -6 can be added.

（式中、Ｘ、Ｒ^３０７、ｎは前述の通り、Ｒ^３０８、Ｒ^３０９は同一又は異種の炭素数１〜４の直鎖状、分岐状のアルキレン基である。）

(In the formula, X, R ³⁰⁷ and n are as described above, and R ³⁰⁸ and R ³⁰⁹ are the same or different linear or branched alkylene groups having 1 to 4 carbon atoms.)

  Specific examples of the base containing a cyano group include 3- (diethylamino) propiononitrile, N, N-bis (2-hydroxyethyl) -3-aminopropiononitrile, and N, N-bis (2-acetoxyethyl). -3-aminopropiononitrile, N, N-bis (2-formyloxyethyl) -3-aminopropiononitrile, N, N-bis (2-methoxyethyl) -3-aminopropiononitrile, N, N -Bis [2- (methoxymethoxy) ethyl] -3-aminopropiononitrile, methyl N- (2-cyanoethyl) -N- (2-methoxyethyl) -3-aminopropionate, N- (2-cyanoethyl) -N- (2-hydroxyethyl) -3-aminopropionic acid methyl, N- (2-acetoxyethyl) -N- (2-cyanoethyl) -3-aminopro Methyl onate, N- (2-cyanoethyl) -N-ethyl-3-aminopropiononitrile, N- (2-cyanoethyl) -N- (2-hydroxyethyl) -3-aminopropiononitrile, N- ( 2-acetoxyethyl) -N- (2-cyanoethyl) -3-aminopropiononitrile, N- (2-cyanoethyl) -N- (2-formyloxyethyl) -3-aminopropiononitrile, N- (2 -Cyanoethyl) -N- (2-methoxyethyl) -3-aminopropiononitrile, N- (2-cyanoethyl) -N- [2- (methoxymethoxy) ethyl] -3-aminopropiononitrile, N- ( 2-cyanoethyl) -N- (3-hydroxy-1-propyl) -3-aminopropiononitrile, N- (3-acetoxy-1-propyl) -N- (2 Cyanoethyl) -3-aminopropiononitrile, N- (2-cyanoethyl) -N- (3-formyloxy-1-propyl) -3-aminopropiononitrile, N- (2-cyanoethyl) -N-tetrahydrofur Furyl-3-aminopropiononitrile, N, N-bis (2-cyanoethyl) -3-aminopropiononitrile, diethylaminoacetonitrile, N, N-bis (2-hydroxyethyl) aminoacetonitrile, N, N-bis ( 2-acetoxyethyl) aminoacetonitrile, N, N-bis (2-formyloxyethyl) aminoacetonitrile, N, N-bis (2-methoxyethyl) aminoacetonitrile, N, N-bis [2- (methoxymethoxy) ethyl Aminoacetonitrile, N-cyanomethyl-N- (2-methoxyethyl) ) Methyl 3-aminopropionate, methyl N-cyanomethyl-N- (2-hydroxyethyl) -3-aminopropionate, methyl N- (2-acetoxyethyl) -N-cyanomethyl-3-aminopropionate, N -Cyanomethyl-N- (2-hydroxyethyl) aminoacetonitrile, N- (2-acetoxyethyl) -N- (cyanomethyl) aminoacetonitrile, N-cyanomethyl-N- (2-formyloxyethyl) aminoacetonitrile, N-cyanomethyl -N- (2-methoxyethyl) aminoacetonitrile, N-cyanomethyl-N- [2- (methoxymethoxy) ethyl] aminoacetonitrile, N- (cyanomethyl) -N- (3-hydroxy-1-propyl) aminoacetonitrile, N- (3-acetoxy-1-propyl) -N (Cyanomethyl) aminoacetonitrile, N-cyanomethyl-N- (3-formyloxy-1-propyl) aminoacetonitrile, N, N-bis (cyanomethyl) aminoacetonitrile, 1-pyrrolidinepropiononitrile, 1-piperidinepropiononitrile, 4-morpholinepropiononitrile, 1-pyrrolidineacetonitrile, 1-piperidineacetonitrile, 4-morpholineacetonitrile, cyanomethyl 3-diethylaminopropionate, cyanomethyl N, N-bis (2-hydroxyethyl) -3-aminopropionate, N, Cyanomethyl N-bis (2-acetoxyethyl) -3-aminopropionate, cyanomethyl N, N-bis (2-formyloxyethyl) -3-aminopropionate, N, N-bis (2-methoxyethyl) Cyanomethyl 3-aminopropionate, N, N-bis [2- (methoxymethoxy) ethyl] -3-aminopropionate cyanomethyl, 3-diethylaminopropionic acid (2-cyanoethyl), N, N-bis (2-hydroxyethyl) ) -3-Aminopropionic acid (2-cyanoethyl), N, N-bis (2-acetoxyethyl) -3-aminopropionic acid (2-cyanoethyl), N, N-bis (2-formyloxyethyl) -3 Aminopropionic acid (2-cyanoethyl), N, N-bis (2-methoxyethyl) -3-aminopropionic acid (2-cyanoethyl), N, N-bis [2- (methoxymethoxy) ethyl] -3- Aminopropionic acid (2-cyanoethyl), 1-pyrrolidinepropionate cyanomethyl, 1-piperidinepropionate cyano Examples include methyl, cyanomethyl 4-morpholine propionate, 1-pyrrolidinepropionic acid (2-cyanoethyl), 1-piperidinepropionic acid (2-cyanoethyl), 4-morpholine propionic acid (2-cyanoethyl), and the like.

  In addition, the compounding amount of the basic compound in the positive resist material of the present invention is preferably 0.001 to 2 parts, particularly 0.01 to 1 part with respect to 100 parts (mass part) of the total base resin. If the blending amount is less than 0.001 part, there is no blending effect, and if it exceeds 2 parts, the sensitivity may be too low.

  As the compound having a group represented by ≡C—COOH in the molecule that can be added to the positive resist material of the present invention, for example, one or more compounds selected from the following groups I and II are used. However, the present invention is not limited to these. By blending this component, the PED (Post Exposure Delay) stability of the resist is improved, and the edge roughness on the nitride film substrate is improved.

[Group I]
A part or all of the hydrogen atoms of the phenolic hydroxyl groups of the compounds represented by the following general formulas (A1) to (A10) are converted to —R ⁴⁰¹ —COOH (R ⁴⁰¹ is a linear or branched alkylene having 1 to 10 carbon atoms). The molar ratio of the phenolic hydroxyl group (C) in the molecule to the group (D) represented by ≡C—COOH is C / (C + D) = 0.1 to 1.0. Compound.

However, in the above formula, R ⁴⁰⁸ represents a hydrogen atom or a methyl group. R ⁴⁰² and R ⁴⁰³ each represent a hydrogen atom or a linear or branched alkyl group or alkenyl group having 1 to 8 carbon atoms. R ⁴⁰⁴ represents a hydrogen atom, a linear or branched alkyl group or alkenyl group having 1 to 8 carbon atoms, or a — (R ⁴⁰⁹ ) h-COOR ′ group (R ′ is a hydrogen atom or —R ⁴⁰⁹ —COOH). Show. R ⁴⁰⁵ represents — (CH ₂ ) _i — (i = 2 to 10), an arylene group having 6 to 10 carbon atoms, a carbonyl group, a sulfonyl group, an oxygen atom or a sulfur atom, and R ⁴⁰⁶ represents 1 to 10 carbon atoms. An alkylene group, an arylene group having 6 to 10 carbon atoms, a carbonyl group, a sulfonyl group, an oxygen atom or a sulfur atom; R ⁴⁰⁷ represents a hydrogen atom, a linear or branched alkyl group having 1 to 8 carbon atoms, an alkenyl group, a phenyl group or a naphthyl group each substituted with a hydroxyl group. R ⁴⁰⁹ represents a linear or branched alkyl group or alkenyl group having 1 to 10 carbon atoms or a —R ⁴¹¹ —COOH group. R ⁴¹⁰ represents a hydrogen atom, a linear or branched alkyl group or alkenyl group having 1 to 8 carbon atoms, or a —R ⁴¹¹ —COOH group. R ⁴¹¹ represents a linear or branched alkylene group having 1 to 10 carbon atoms. h is an integer of 1 to 4. j is 0 to 3, s1 to 4 and t1 to 4 are numbers satisfying s1 + t1 = 8, s2 + t2 = 5, s3 + t3 = 4, s4 + t4 = 6, and having at least one hydroxyl group in each phenyl skeleton is there. u is an integer of 1-4. κ is a number that makes the compound of formula (A6) a mass average molecular weight of 1,000 to 5,000. λ is a number that makes the compound of formula (A7) a mass average molecular weight of 1,000 to 10,000.

[Group II]
Compounds represented by the following general formulas (A11) to (A15).

In the above formula, R ⁴⁰² , R ⁴⁰³ and R ⁴¹¹ have the same meaning as described above. R ⁴¹² represents a hydrogen atom or a hydroxyl group. s5 and t5 are numbers satisfying s5 + t5 = 5 with s5 ≧ 0 and t5 ≧ 0. h ′ is 0 or 1.

  Specific examples of the component include compounds represented by the following general formulas AI-1 to 14 and AII-1 to 10, but are not limited thereto.

In the above formula, R ″ represents a hydrogen atom or a CH ₂ COOH group, and in each compound, 10 to 100 mol% of R ″ is a CH ₂ COOH group. κ and λ have the same meaning as described above.

  The addition amount of the compound having a group represented by ≡C—COOH in the molecule is 0 to 5 parts, preferably 0.1 to 5 parts, more preferably 100 parts (parts by mass) of the base resin. 0.1 to 3 parts, more preferably 0.1 to 2 parts. If it exceeds 5 parts, the resolution of the resist material may be lowered.

  To the positive resist material of the present invention, particularly a chemically amplified positive resist material, a surfactant for improving the coating property can be further added.

  Examples of the surfactant include, but are not limited to, polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene olein ether, and polyoxyethylene Polyoxyethylene alkyl allyl ethers such as octylphenol ether and polyoxyethylene nonylphenol, polyoxyethylene polyoxypropylene block copolymers, sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monovalmitate, sorbitan monostearate, poly Oxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monovalmitate, polyoxyethylene sorbitan monostearate Nonionic surfactants of polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan trioleate and polyoxyethylene sorbitan tristearate, F-top EF301, EF303, EF352 (Tochemputtoc), MegaFuck F171, F172, F173 (Dainippon Ink Chemical Co., Ltd.), Florard FC430, FC431 (Sumitomo 3M), Asahi Guard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfinol E1004, KH-10, Fluorosurfactants such as KH-20, KH-30, KH-40 (Asahi Glass), organosiloxane polymers-KP-341, X-70-092, X-70-093 (Shin-Etsu Chemical) Work), acrylic acid-based or methacrylic acid-based Polyflow No. 75, no. 95 (Kyoeisha Yushi Chemical Industry Co., Ltd.), etc., among which FC430, Surflon S-381, Surfinol E1004, KH-20, KH-30 are preferred. These can be used alone or in combination of two or more.

  The addition amount of the surfactant in the positive resist material of the present invention, particularly the chemically amplified positive resist material, is 2 parts by mass or less, preferably 1 mass with respect to 100 parts by mass of the solid content in the resist material composition. Or less.

  The positive resist material of the present invention, for example, an organic solvent, a repeating unit represented by the general formula (1a), a repeating unit represented by the general formula (1b) and / or a repeating unit represented by the general formula (1c) In the case of using a chemically amplified positive resist material containing a polymer compound having an acid generator and the like for the production of various integrated circuits, known lithography techniques can be used, although not particularly limited.

For example, the positive resist material of the present invention is applied to an integrated circuit manufacturing substrate (Si, SiO ₂ , SiN, SiON, TiN, WSi, BPSG, SOG, organic antireflection film, Cr, CrO, CrON, MoSi, etc.) The film is applied to a coating film thickness of 0.1 to 2.0 μm by a suitable coating method such as spin coating, roll coating, flow coating, dip coating, spray coating, doctor coating or the like, and 60 to 150 on a hot plate. Prebaking at 1 ° C. for 1 to 10 minutes, preferably 80 to 120 ° C. for 1 to 5 minutes. Next, a light source of high energy rays selected from ultraviolet rays, far ultraviolet rays, electron beams, X-rays, excimer lasers, γ rays, synchrotron radiation, etc., preferably an exposure wavelength of 300 nm or less, more preferably exposure in the range of 180 to 200 nm The target pattern is exposed at a wavelength through a predetermined mask. It is preferable to expose so that the exposure amount is about 1 to 200 mJ / cm ² , preferably about 10 to 100 mJ / cm ² . Next, post exposure baking (PEB) is performed on a hot plate at 60 to 150 ° C. for 1 to 5 minutes, preferably 80 to 120 ° C. for 1 to 3 minutes.

  Furthermore, 0.1-5%, preferably 2-3% tetramethylammonium hydroxide (TMAH) or other alkaline aqueous developer is used for 0.1-3 minutes, preferably 0.5-2 minutes. A target pattern is formed on the substrate by developing by a conventional method such as a (dip) method, a paddle method, or a spray method. In addition, the resist material of the present invention is a high-energy ray such as far ultraviolet ray having a wavelength of 254 to 193 nm, vacuum ultraviolet ray having a wavelength of 157 nm, electron beam, soft X-ray, X-ray, excimer laser, γ ray, synchrotron radiation, etc. It is most suitable for fine patterning with high energy rays, more preferably with high energy rays in the wavelength range of 180 to 200 nm.

  The resist material of the present invention can also be applied to immersion lithography. In ArF immersion lithography, pure water is used as an immersion solvent. In immersion lithography, exposure is performed by inserting water between a pre-baked resist film and a projection lens. The exposure wavelength is 135 nm obtained by dividing the refractive index of water at a wavelength of 193 nm by 1.43, and the wavelength can be shortened. This is an important technology for extending the life of ArF lithography to the 65 nm node, and its development has been accelerated. The lactone ring conventionally used as the hydrophilic group of ArF resist is soluble in both alkaline aqueous solution and water. When water-soluble lactones or acid anhydrides such as maleic anhydride or itaconic anhydride are used as hydrophilic groups, water permeates from the resist surface due to immersion in water, causing the resist surface to swell. Will occur. However, since the positive resist material of the present invention contains a polymer compound containing an adhesive group having alkali solubility such as hexafluoroalcohol as a base resin, it is difficult for the resist surface to swell. That is, hexafluoroalcohol and the like dissolve in an alkaline aqueous solution but not in water at all. Therefore, in the positive resist material of the present invention, it is considered that the influence of dissolution and swelling due to the immersion described above is small.

  EXAMPLES Hereinafter, although a synthesis example, a comparative synthesis example, an Example, and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example etc.

[Synthesis Example 1]
In a 100 mL flask, 7.8 g of 2- (7-oxanorbornan-2-yl) cyclopentyl methacrylate, 5-oxo-4-oxatricyclo [4.2.1.0 ^3,7 ] nonane-2-methacrylate 11.1 g of yl, 5- [3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropyl] methacrylic acid, 7.2 g of bicyclo [2.2.1] hept-2-yl, tetrahydrofuran as a solvent 20 g of was added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in a 500 mL solution of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain 18.1 g of a white polymer.

When the obtained polymer was measured by ¹³ C, ¹ H-NMR and GPC, the following analysis results were obtained.
Copolymerization composition ratio 2- (7-oxanorbornan-2-yl) methacrylate: 5-oxo-4-oxatricyclo [4.2.1.0 ^3,7 ] nonan-2-yl methacrylate: methacryl Acid 5- [3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropyl] bicyclo [2.2.1] hept-2-yl = 0.32: 0.48: 0.20
Mass average molecular weight (Mw) = 11,800
Molecular weight distribution (Mw / Mn) = 1.78

この高分子化合物をポリマー１とする。

This polymer compound is designated as Polymer 1.

[Synthesis Example 2]
In a 100 mL flask, 7.8 g of 2- (7-oxanorbornane-2-yl) cyclopentyl methacrylate, 10.8 g of 3-hydroxy-1-adamantyl methacrylate, 5- [3,3,3-trifluoromethacrylate -2-hydroxy-2-trifluoromethylpropyl] bicyclo [2.2.1] hept-2-yl and 20 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated into a 500 mL solution of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain 18.6 g of a white polymer.

When the obtained polymer was measured by ¹³ C, ¹ H-NMR and GPC, the following analysis results were obtained.
Copolymerization composition ratio 2- (7-oxanorbornan-2-yl) methacrylic acid methacrylate: 3-hydroxy-1-adamantyl methacrylate: 5- [3,3,3-trifluoro-2-hydroxy-2 methacrylate] -Trifluoromethylpropyl] bicyclo [2.2.1] hept-2-yl = 0.34: 0.44: 0.22
Mass average molecular weight (Mw) = 11,600
Molecular weight distribution (Mw / Mn) = 1.79

この高分子化合物をポリマー２とする。

This polymer compound is designated as Polymer 2.

[Synthesis Example 3]
In a 100 mL flask, 6.5 g of 1- (2-tetrahydrofuranyl) cyclopentyl methacrylate, 10.8 g of 3-hydroxy-1-adamantyl methacrylate, 5- [3,3,3-trifluoro-2-hydroxy methacrylate 2-trifluoromethylpropyl] bicyclo [2.2.1] hept-2-yl and 20 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in a 500 mL solution of isopropyl alcohol, and the obtained white solid was filtered and dried under reduced pressure at 60 ° C. to obtain 15.9 g of a white polymer.

When the obtained polymer was measured by ¹³ C, ¹ H-NMR and GPC, the following analysis results were obtained.
Copolymerization composition ratio 1- (2-tetrahydrofuranyl) cyclopentyl methacrylate: 3-hydroxy-1-adamantyl methacrylate: 5- [3,3,3-trifluoro-2-hydroxy-2-trifluoromethyl methacrylate Propyl] bicyclo [2.2.1] hept-2-yl = 0.30: 0.50: 0.20
Mass average molecular weight (Mw) = 9,600
Molecular weight distribution (Mw / Mn) = 1.68

この高分子化合物をポリマー３とする。

This polymer compound is designated as Polymer 3.

[Synthesis Example 4]
In a 100 mL flask, 7.6 g of 2- (7-oxanorbornan-2-yl) cyclopentyl methacrylate, 11.5 g of 3-hydroxy-1-adamantyl methacrylate, vinyl ether 5-[(1 ′, 1 ′, 1 ′) -Trifluoro-2'-trifluoromethyl-2'-hydroxy) propyl] norbornan-2-yl and 20 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in a 500 mL solution of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain 18.1 g of a white polymer.

When the obtained polymer was measured by ¹³ C, ¹ H-NMR and GPC, the following analysis results were obtained.
Copolymerization composition ratio 2- (7-oxanorbornan-2-yl) methacrylate methacrylate: 3-hydroxy-1-adamantyl methacrylate: vinyl ether 5-[(1 ′, 1 ′, 1′-trifluoro-2 ′ -Trifluoromethyl-2'-hydroxy) propyl] norbornan-2-yl = 0.34: 0.48: 0.18
Mass average molecular weight (Mw) = 12,800
Molecular weight distribution (Mw / Mn) = 1.92

この高分子化合物をポリマー４とする。

This polymer compound is designated as polymer 4.

[Synthesis Example 5]
In a 100 mL flask, 7.7 g of 2- (7-oxanorbornan-2-yl) cyclopentyl methacrylate, 10.0 g of 3-hydroxy-1-adamantyl methacrylate, 5-hydroxy-5-trifluoromethyl-bicyclomethacrylate [2.2.1] 8.8 g of hept-2-yl and 20 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in a 500 mL solution of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain 18.2 g of a white polymer.

When the obtained polymer was measured by ¹³ C, ¹ H-NMR and GPC, the following analysis results were obtained.
Copolymerization composition ratio 2- (7-oxanorbornan-2-yl) methacrylate methacrylate: 3-hydroxy-1-adamantyl methacrylate: 5-hydroxy-5-trifluoromethyl-bicyclomethacrylate [2.2.1 ] Hept-2-yl = 0.34: 0.33: 0.33
Mass average molecular weight (Mw) = 9,700
Molecular weight distribution (Mw / Mn) = 1.83

この高分子化合物をポリマー５とする。

This polymer compound is designated as polymer 5.

[Synthesis Example 6]
In a 100 mL flask, 3.8 g of 2- (7-oxanorbornan-2-yl) cyclopentyl methacrylate, 3-ethyl-3-exotetracyclomethacrylate [4.4.0.1 ^2,5 . 1 ^7,10 ] dodecanyl 4.6 g, methacrylic acid-3-hydroxy-1-adamantyl 11.5 g, methacrylic acid 5- [3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropyl] bicyclo [2.2.1] 7.8 g of hept-2-yl and 20 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in 500 mL of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain 17.8 g of a white polymer.

When the obtained polymer was measured by ¹³ C, ¹ H-NMR and GPC, the following analysis results were obtained.
Copolymerization composition ratio 2- (7-Oxanolbornan-2-yl) cyclopentyl methacrylate: 3-ethyl-3-exotetracyclo methacrylate [4.4.0.1 ^2,5 . 1 ^7,10 ] dodecanyl: methacrylate-3-hydroxy-1-adamantyl: methacrylate 5- [3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropyl] bicyclo [2.2.1] ] Hept-2-yl = 0.18: 0.15: 0.47: 0.20
Mass average molecular weight (Mw) = 9,700
Molecular weight distribution (Mw / Mn) = 1.68

この高分子化合物をポリマー６とする。

This polymer compound is designated as polymer 6.

[Synthesis Example 7]
In a 100 mL flask, 7.7 g of 2- (7-oxanorbornan-2-yl) cyclopentyl methacrylate, 10.0 g of 3-hydroxy-1-adamantyl methacrylate, 5-hydroxy-5-trifluoromethyl-6 methacrylate , 6-Difluoro-bicyclo [2.2.1] hept-2-yl (9.8 g) and 20 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in a 500 mL solution of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain 19.3 g of a white polymer.

When the obtained polymer was measured by ¹³ C, ¹ H-NMR and GPC, the following analysis results were obtained.
Copolymerization composition ratio 2- (7-oxanorbornan-2-yl) methacrylate methacrylate: 3-hydroxy-1-adamantyl methacrylate: 5-hydroxy-5-trifluoromethyl-6,6-difluoro-bicyclomethacrylate [2.2.1] Hept-2-yl = 0.34: 0.33: 0.33
Mass average molecular weight (Mw) = 9,900
Molecular weight distribution (Mw / Mn) = 1.81

この高分子化合物をポリマー７とする。

This polymer compound is designated as polymer 7.

[Comparative Synthesis Example 1]
To a 100 mL flask was added 24.4 g of methacrylic acid-2-ethyl-2-adamantane, 17.1 g of γ-butyrolactone methacrylate, and 40 g of tetrahydrofuran as a solvent. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in a 500 mL solution of isopropyl alcohol, and the obtained white solid was filtered and dried under reduced pressure at 60 ° C. to obtain 36.1 g of a white polymer.

When the obtained polymer was measured by ¹³ C, ¹ H-NMR and GPC, the following analysis results were obtained.
Copolymerization composition ratio Methacrylic acid-2-ethyl-2-adamantane: Methacrylic acid γ-Butyrolactone = 0.48: 0.52
Mass average molecular weight (Mw) = 12,500
Molecular weight distribution (Mw / Mn) = 1.88

この高分子化合物を比較ポリマー１とする。

This polymer compound is referred to as comparative polymer 1.

(Examples and comparative examples)
[Preparation of positive resist material]
Using the synthesized polymer compounds (Polymers 1 to 7, Comparative Polymer 1), a solution dissolved with the composition shown in Table 1 below was filtered through a 0.2 μm size filter to prepare a resist solution.
Each composition in Table 1 is as follows.

塩基性化合物：トリブチルアミン、トリエタノールアミン、
ＴＭＭＥＡ、ＡＡＡ、ＡＡＣＮ（下記構造式参照）、

溶解阻止剤：ＤＲＩ１（下記構造式参照）、

有機溶剤：ＰＧＭＥＡ（プロピレングリコールモノメチルエーテルアセテート）。 Polymers 1 to 7: From Synthesis Examples 1 to 7 Comparative Polymer 1: From Comparative Synthesis Example 1 Acid generators: PAG1, PAG2 (see the following structural formula)

Basic compounds: tributylamine, triethanolamine,
TMMEA, AAA, AACN (see structural formula below),

Dissolution inhibitor: DRI1 (see structural formula below),

Organic solvent: PGMEA (propylene glycol monomethyl ether acetate).

[Exposure patterning evaluation]
The prepared resist materials (Examples 1 to 13 and Comparative Example 1) were spin-coated on a substrate formed by depositing AR-19 (manufactured by Shipley) with a film thickness of 82 nm on a silicon wafer, and using a hot plate. The resist was baked at 130 ° C. for 60 seconds to make the resist thickness 250 nm.

  This is exposed using an ArF excimer laser stepper (Nikon Corporation, NSR-S305B, NA-0.68, σ0.85, 2/3 annular illumination), and baked immediately after exposure at 110 ° C. for 60 seconds. Development was performed with an aqueous solution of 38% tetramethylammonium hydroxide for 60 seconds to obtain a positive pattern.

And the obtained resist pattern was evaluated as follows.
The exposure amount for resolving 0.12 μm line and space at 1: 1 was defined as the resist sensitivity, and the minimum line width of the line and space separated at this exposure amount was defined as the resolution of the evaluation resist.
Further, a line edge roughness of a line and space of 0.12 μm was measured using a length measuring SEM (S-9220 manufactured by Hitachi, Ltd.).
The results are also shown in Table 1.

  From Table 1, it can be seen that the resist materials of Examples 1 to 13 have high sensitivity and high resolution and small line edge roughness.

[Evaluation of dissolution characteristics in developer by QCM method]
A solution obtained by filtering the solution of the resist material prepared above (Examples 2 and 3 and Comparative Example 1) through a 0.2 μm size filter is 1 inch (about 2 inches) in which a base is gold and a chromium electrode is deposited on the surface. .5 cm) was spin-coated and baked at 130 ° C. for 60 seconds using a hot plate to make the resist thickness 250 nm.

Exposure was performed with an ArF exposure apparatus ArFES3000 (manufactured by RISOTEC Japan), and PEB was performed at 110 ° C. for 60 seconds. The substrate is mounted on the RDA-Qz3 crystal resonator microbalance device for resist development analyzer (manufactured by RISOTEC Japan), developed with 2.38% tetramethylammonium hydroxide aqueous solution for 60 seconds, and developed with vibration mode AT cut. Swelling and dissolution were measured. That is, exposure was performed with different exposure amounts, and measurement was performed by the QCM method.
The results are shown in FIGS. In the figure, when the film thickness increases with respect to the development time, it indicates swelling, and when the film thickness decreases, it indicates that the film is dissolved.

  1 to 3, it can be seen that in the resist materials of Examples 2 and 3, swelling during development can be significantly suppressed by measurement by the QCM method.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

It is a graph which shows the result of having measured by the QCM method with respect to the resist formed from the resist material of Example 2. FIG. It is a graph which shows the result of having measured by the QCM method with respect to the resist formed from the resist material of Example 3. FIG. 6 is a graph showing the results of measurement by a QCM method on a resist formed from the resist material of Comparative Example 1.

Claims (10)

A polymer compound having at least a repeating unit represented by the following general formula (1a), a repeating unit represented by the following general formula (1b) and / or a repeating unit represented by the following general formula (1c).

(In the formula, R ¹ represents a hydrogen atom, a methyl group or —CH ₂ CO ₂ R ^7. R ² represents a hydrogen atom, a methyl group or —CO ₂ R ^7. R ³ and R ⁴ are each independently carbon. A linear, branched or cyclic monovalent hydrocarbon group having a number of 1 to 10. Alternatively, R ³ and R ⁴ are bonded to each other to form an aliphatic hydrocarbon ring together with the carbon atoms to which they are bonded. R ⁵ represents a divalent group selected from frangiyl, tetrahydrofurandiyl, and oxanorbornanediyl, and R ⁶ is a linear or branched group having 1 to 10 carbon atoms that may contain a hydrogen atom or a heteroatom. R ⁷ represents a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 15 carbon atoms, R ⁹ and R ¹⁶ represent a hydrogen atom, a methyl group, ^{.R 8, R 15} showing the -CH ₂ CO ₂ R ⁷ are hydrogen atoms , ^{.R 10, R 17} is a single bond or a C1-4 a straight, branched alkylene group ^{.R 11} is a single bond or a 1 to 4 carbon atoms which indicates a methyl group, _-CO 2 ^{R 7} R ¹² and R ¹³ are trifluoromethyl groups or methyl groups, but R ¹² and R ¹³ are not both methyl groups, and R ¹⁸ is fluorine. R ¹⁴ and R ¹⁹ are hydrogen atoms or acid labile groups, R ²³ is a cyclic alkylene group having 4 to 20 carbon atoms, and may be a bridged cyclic alkylene group. R ²⁴ and R ²⁵ are each a hydrogen atom or a fluorine atom, Z ¹ is a bridged cyclic hydrocarbon group having 4 to 12 carbon atoms, and —O— which may have a -S- ^.Y 1, ^{Y 2} is Respectively -O- or -C (= O) is -O- .a, b, c represents the molar ratio of respective repeating units, 0.1 ≦ a ≦ 0.8,0 ≦ b ≦ 0 .8, 0 ≦ c ≦ 0.8, 0.05 ≦ b + c ≦ 0.8.) The polymer compound according to claim 1, wherein the repeating unit represented by the general formula (1c) is a repeating unit represented by the following general formula (1c-1).

(In the formula, R ^{15 to} R ¹⁹ , R ²⁴ , R ²⁵ , Y ² , and c are the same as described above. X ¹ is a single bond, a methylene group, an ethylene group, an oxygen atom, or a sulfur atom. ) The polymer compound according to claim 1 or 2, wherein the repeating unit represented by the general formula (1a) is a repeating unit represented by the following general formula (1a-1).

(Wherein R ^{1 to} R ⁴ and a are the same as described above.) The polymer compound according to claim 1 or 2, wherein the repeating unit represented by the general formula (1a) is a repeating unit represented by the following general formula (1a-2).

(Wherein R ^{1 to} R ⁴ and a are the same as described above. R ²⁰ and R ²¹ are a single bond or an alkylene group having 1 to 4 carbon atoms, and R ²⁰ + R ²¹ is an alkylene having 3 to 6 carbon atoms. Group and may contain a double bond.)   A positive resist material comprising at least the polymer compound according to any one of claims 1 to 4 as a base resin.   6. The positive resist material according to claim 5, which is a chemically amplified resist material further containing an organic solvent and an acid generator.   7. The positive resist material according to claim 5, further comprising a dissolution inhibitor.   8. A positive resist material according to claim 5, wherein a basic compound and / or a surfactant is further added as an additive. Resist material.   At least a step of applying the resist material according to any one of claims 5 to 8 on a substrate, a step of exposing to high energy rays after heat treatment, and a step of developing using a developer. A pattern forming method comprising:   The pattern forming method according to claim 9, wherein the high energy ray has a wavelength in a range of 180 nm to 200 nm.

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