JP4205412B2 - Method for manufacturing optically coupled semiconductor device - Google Patents

Method for manufacturing optically coupled semiconductor device Download PDF

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JP4205412B2
JP4205412B2 JP2002349654A JP2002349654A JP4205412B2 JP 4205412 B2 JP4205412 B2 JP 4205412B2 JP 2002349654 A JP2002349654 A JP 2002349654A JP 2002349654 A JP2002349654 A JP 2002349654A JP 4205412 B2 JP4205412 B2 JP 4205412B2
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light
lead frame
side lead
semiconductor device
optically coupled
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JP2004186297A (en
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正明 河北
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NEC Engineering Ltd
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NEC Engineering Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Description

【０００１】
【発明の属する技術分野】
本発明は、光結合半導体装置の製造方法に関し、特に、発光素子を搭載した発光側リードフレームと、受光素子を搭載した受光側リードフレームとの間に絶縁性フィルムを備えた光結合半導体装置の製造方法に関する。
【０００２】
【従来の技術】
従来、発光側リードフレームと、受光側リードフレームとの間に絶縁性フィルムを備えた光結合半導体装置を製造するにあたって、例えば、図１０に示す方法が採用されている。
【０００３】
この方法では、受光側リードフレーム１０１に受光素子１０２を搭載し、ボンディングワイヤー１０５をボンディングする。その後、受光素子１０２の上面に光透過性樹脂１０６を塗布し、絶縁フィルム１０７をマウントした後、受光側リードフレーム１０１に硬化処理を施し、光透過性樹脂１０６を硬化させる。同様に、発光側リードフレーム１０３に発光素子１０４を搭載し、ボンディングワイヤー１０５をボンディングし、光透過性樹脂１０６を塗布する。そして、上記受光側リードフレーム１０１と発光側リードフレーム１０３とを対向させて、光結合半導体装置を組み立てる。
【０００４】
しかし、この方法では、受光側リードフレーム１０１に絶縁フィルム１０７をマウントする際に、光透過性樹脂１０６の上にマウントすることとなるが、マウントされた絶縁フィルム１０７は、自重で傾き始め、最終的に、アイランドのエッジ部分である第１支持点１０８とボンディングワイヤー１０５の頂上部である第２支持点１０９によって支持される。
【０００５】
そのため、絶縁フィルム１０７のマウント位置によって絶縁フィルム１０７の傾きが一定とならず、様々な方向に傾斜する。また、第１支持点１０８と第２支持点９によって絶縁フィルム１０７が支持されるが、第２支持点１０９は、ボンディングワイヤー１０５の頂上部であるため、絶縁フィルム１０７をマウントした際の衝撃、あるいは荷重によって、ボンディングワイヤー１０５が変形し、光結合半導体装置の品質に悪影響を及ぼすおそれがある。
【０００６】
また、このように絶縁フィルム１０７を挿入して製造する方法では、絶縁フィルム１０７の大きさをできるだけ大きくすることで、沿面距離を長くして絶縁耐圧の向上を図ることが望ましい。しかしながら、従来の方法では、絶縁フィルム１０７を大きくすることによって、さらに絶縁フィルム１０７が不安定となるため、絶縁耐圧の向上を図ることが困難であるという問題があった。
【０００７】
例えば、特許文献１に記載の光結合半導体装置では、図１１に示すように、発光素子２１０と受光素子２１１との間に設けられている絶縁フィルム２１３の形状を屏状側面部を有する立体構造とすることにより、内部沿面距離を長くして絶縁耐圧の向上を図っている。
【０００８】
この方法では、発光素子２１０上に光透過性樹脂２１２を載せ、その上に鉤形の側面部を有する絶縁フィルム２１３を載置する。次に、受光素子２１１が対向するように導出リード２１４、２１５を固定し、遮光性樹脂２１６で素子を封止する。
【０００９】
この方法では、絶縁耐圧を向上させるという一応の効果は得られるものの、前述のように、絶縁フィルム２１３の自重によってボンディングワイヤー２１７の変形を引き起こすとともに、光透過性樹脂２１２の上に載せただけでは絶縁フィルム２１３の安定した形状を維持するのが非常に困難であり、安定した形状が得られないため、定量的な絶縁耐圧値を得るのが困難であるという問題がある。
【００１０】
そこで、特許文献２に記載の光結合半導体装置では、図１２及び図１３に示すように、１次側リードフレーム３１１のアイランド部３０９に発光ダイオード３０３をダイボンディングして配線した後、１次側透明シリコン樹脂３０４をポッティングし、リードフレームのストッパ部３１３に１次側絶縁フィルム３０６をマウントする。次に、２次側リードフレームにおいても同様な組立をした後、発光ダイオード３０３と受光素子３０２が対向するように透明ゲルシリコン樹脂３０８で１次側と２次側の絶縁フイルム３０６、３０７を接合することにより、絶縁フイルム３０６、３０７を安定させ、ボンディングワイヤー３１５、３１６との接触を防止することにより、上述のようなボンディングワイヤーの変形等を防止し、定量的な絶縁耐圧値を得ることができる構成を提案している。
【００１１】
【特許文献１】
特開昭５９−１１１３７７号公報
【００１２】
【特許文献２】
特開平５−３２７００４号公報
【００１３】
【発明が解決しようとする課題】
しかし、上記特許文献２に記載の光結合半導体装置では、リードフレームストッパ部３１３、３１４が存在するため、樹脂封止の際に、遮光性樹脂３２０の流れを妨げ、遮光性樹脂３２０の充填が不完全となり、高品質で高絶縁耐圧の光結合半導体装置を得ることができないおそれがあった。
【００１４】
そこで、本発明は、上記従来の光結合半導体装置等における問題点に鑑みてなされたものであって、遮光性樹脂の未充填を防止し、高品質かつ高絶縁耐圧の光結合半導体装置の製造方法を提供することを目的とする。
【００１５】
【課題を解決するための手段】
上記目的を達成するため、本発明は、発光素子を搭載した発光側リードフレームと、前記発光素子に相対向する位置に受光素子を搭載した受光側リードフレームと、該受光側リードフレームと前記発光側リードフレームとの間に絶縁性フィルムを備えた光結合半導体装置の製造方法において、前記受光側リードフレームと前記発光側リードフレームのいずれか一方に、前記絶縁性フィルムを支持する支持手段を設け、前記発光素子及び受光素子に光透過性樹脂を塗布して硬化処理を施し、前記支持手段を除去し、前記発光素子を搭載した発光側リードフレーム、前記受光素子を搭載した受光側リードフレーム、前記絶縁性フィルム及び前記光透過性樹脂を遮光性樹脂で封止することを特徴とする。
【００１６】
そして、本発明によれば、受光側リードフレームと発光側リードフレームのいずれか一方に設けた支持手段によって絶縁性フィルムを支持し、発光素子及び受光素子に光透過性樹脂を塗布して硬化処理を施すため、絶縁フイルムとボンディングワイヤーとの接触を防止するとともに、絶縁フイルムを安定させ、定量的な絶縁耐圧値を得ることができる。また、これに加え、光透過性樹脂の硬化処理後、支持手段を除去するため、遮光性樹脂による樹脂封止の際に、遮光性樹脂流れを妨げることもなく、遮光性樹脂の未充填を防止し、高品質かつ高絶縁耐圧の光結合半導体装置を得ることができる。
【００１７】
前記光結合半導体装置の製造方法において、前記支持手段を、前記受光側リードフレームと前記発光側リードフレームのいずれか一方のタイバー部から延設された板状部材とすることができる。そして、この板状部材は、受光側リードフレームと発光側リードフレームのいずれか一方のタイバー部のディンプル角と同一の角度で曲折されるようにすることが好ましい。
【００１８】
さらに、本発明にかかる光結合半導体装置の製造方法は、複数のリードを備えた光結合半導体装置にも適用することができる。
【００１９】
【発明の実施の形態】
次に、本発明の実施の形態について図面を参照しながら説明する。
【００２０】
図１乃至図８は、本発明にかかる光結合半導体装置の製造方法の一実施の形態を示し、この光結合半導体装置は、受光側リードフレームと発光側リードフレームの間に絶縁フィルムを備える。
【００２１】
図１及び図３に示すように、受光側リードフレーム１６には、タイバー部２１よりストッパー２２ａ、２２ｂが水平方向に延設される。ストッパー２２ｂは、タイバー部２１より延設され、受光側リードフレーム１６のディンプル角２５と同じ角度で曲げられ、任意の位置で水平方向に曲げられている。
【００２２】
受光側リードフレーム１６に受光素子１７を搭載し、ボンディングワイヤー１９をボンディングし、受光素子１７の上面に光透過性樹脂１８を塗布する。絶縁フィルム２０をマウントする場合には、タイバー部２１より伸びたストッパー２２ａに接するようにマウントする。ストッパー２２ａに接するところでマウントした後、絶縁フィルム２０は、自重でストッパー２２ａとの接点である第２支持点２４を中心に傾き、図２に示すように、ストッパー２２ｂの先端である第１支持点２３との２点で支持される。このように、第１支持点２３及び第２支持点２４によって、常に一定の傾きが得られ、ばらつきなく安定した状態での絶縁フィルム２０のマウントが可能である。
【００２３】
さらに、ストッパー２２ａ、２２ｂによって絶縁フィルム２０のマウント位置を高く保つことができ、ボンディングワイヤー１９への接触がなくなり、ボンディングワイヤー１９の損傷を防止することができる。また、絶縁フィルム２０が直接ボンディングワイヤー１９に触れることがないため、絶縁フィルムをマウントする際の衝撃等でボンディングワイヤー１９を変形させることはない。その結果、従来よりも高品質の光結合半導体装置を提供することができる。また、ストッパー２２ａ、２２ｂの第１支持点２３、第２支持点２４によって支持され安定しているため、絶縁フィルム２０の寸法を大きく取ることができ、高絶縁耐圧を得ることが可能である。
【００２４】
図４に示すように、別の発光側リードフレーム２６には、受光側リードフレーム１６と同様に発光素子２７が搭載され、ボンディングワイヤー２９がボンディングされている。さらに、発光素子２７を覆うように光透過性樹脂２８が塗布されている。
【００２５】
この２枚の受光側リードフレーム１６と発光側リードフレーム２６を対向させ、発光側リードフレーム２６に塗布された光透過性樹脂２８を受光側リードフレーム１４にマウントされた絶縁フィルム２０に結合させる。その後、対向させた受光側リードフレーム１６と発光側リードフレーム２６に硬化処理を施し、光透過性樹脂１８、２８を硬化させる。さらに、受光側リードフレーム１６のタイバー部２１より伸びているストッパー２２ａ、２２ｂを、図５及び図６に示すように、切断パンチ３１によって上から下へと打ち抜いて切断し、図７に示すような状態とした後、図８に示すように、遮光性樹脂３２によって封止して光結合半導体装置が完成する。
【００２６】
ここで、光透過性樹脂１８、２８は、既に硬化処理により硬化しているため、ストッパー２２ａ、２２ｂを切断しても絶縁フィルム２０のマウント状態が変わることはなく、ストッパー２２ａ、２２ｂを切断しても問題とはならない。
【００２７】
また、ストッパー２２ａ、２２ｂが切断可能であるため、絶縁フィルム２０をマウントして２枚のリードフレーム１６、２６を対向させた後は、ストッパー２２ａ、２２ｂが遮光性樹脂３１とともに樹脂封止されることはない。
【００２８】
さらに、ストッパー２２ａ、２２ｂは、タイバー部２１より切断されるため、樹脂封止の際に遮光性樹脂３２の流れを妨げることはなく、遮光性樹脂３２の未充填という問題も発生しない。
【００２９】
上記各実施例において、光結合半導体装置のリードの本数が増加した場合についても同様の構造を取ることができる。
【００３０】
すなわち、図９に示すように、リードの本数が増えた場合でも、上記実施の形態と略々同様の製造工程となるが、相違点としては、ストッパー３４ａ〜３４ｃの本数を増やして絶縁フィルム３５を支持する点である。
【００３１】
同図に示すように、リード３３の本数が増えると、必ずしもストッパー３４ａ、３４ｂが装置の中心付近に配置されるとは限らない。本実施の形態では、リード３３間から各々ストッパー３４ａ、３４ｂをタイバー部３６から水平に複数本延設している。ストッパー３４ｃは、タイバー部３６のディンプル角に沿って任意の位置で水平方向に伸びている。これにより、絶縁フィルム３５は、支持点３７〜４０の４点にて支持される。
【００３２】
そして、上述の実施の形態と同様の工程を経て発光素子及び受光素子に光透過性樹脂を塗布し、硬化処理を施し、ストッパー３４ａ〜３４ｃを除去し、遮光性樹脂で封止することにより光結合半導体装置を製造することができ、上述の実施の形態と同様の効果を奏する。
【００３３】
本実施の形態では、リード３３の本数が増えることによって、絶縁フィルム３５の寸法も大きくなるが、このような構造にすることによって、絶縁フィルム３５が大きくなっても安定してマウントすることができる。その結果、さらに高絶縁耐圧の光結合半導体装置を提供することができる。
【００３４】
【発明の効果】
以上説明したように、本発明によれば、遮光性樹脂の未充填を防止しながら、高品質かつ高絶縁耐圧の光結合半導体装置の製造方法を提供することが可能となる。
【図面の簡単な説明】
【図１】本発明にかかる光結合半導体装置の製造方法における絶縁フィルムのマウント状態を示す図である。
【図２】本発明にかかる光結合半導体装置の製造方法において絶縁フィルムを支持した状態を示す図である。
【図３】図２のＡ−Ａ矢視図である。
【図４】本発明にかかる光結合半導体装置の製造方法においてリードフレームを対向させた状態を示す図である。
【図５】本発明にかかる光結合半導体装置の製造方法においてストッパーを切断した状態を示す図である。
【図６】図５のＢ−Ｂ矢視図である。
【図７】本発明にかかる光結合半導体装置の製造方法においてストッパーを切断した後の状態を示す図である。
【図８】本発明にかかる光結合半導体装置の製造方法において樹脂封止を行った状態を示す図である。
【図９】本発明にかかる光結合半導体装置の製造方法の他の実施の形態において絶縁フィルムをマウントした後の状態を示す平面図である。
【図１０】従来の光結合半導体装置の製造方法の一例を示す図である。
【図１１】従来の光結合半導体装置の製造方法の他の例を示す図である。
【図１２】従来の光結合半導体装置の製造方法の他の例を示す図である。
【図１３】図１２の光結合半導体装置の製造方法のリードフレームストッパ部等を示す斜視図である。
【符号の説明】
１６ 受光側リードフレーム
１７ 受光素子
１８ 光透過性樹脂
１９ ボンディングワイヤー
２０ 絶縁フィルム
２１ タイバー部
２２ａ ストッパー
２２ｂ ストッパー
２３ 第１支持点
２４ 第２支持点
２５ ディンプル角
２６ 発光側リードフレーム
２７ 発光素子
２８ 光透過性樹脂
２９ ボンディングワイヤー
３１ 切断パンチ
３２ 遮光性樹脂
３３ リード
３４ａ ストッパー
３４ｂ ストッパー
３４ｃ ストッパー
３５ 絶縁フィルム
３７〜４０ 支持点[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing an optically coupled semiconductor device, and more particularly, to an optically coupled semiconductor device including an insulating film between a light emitting side lead frame on which a light emitting element is mounted and a light receiving side lead frame on which a light receiving element is mounted. It relates to a manufacturing method.
[0002]
[Prior art]
Conventionally, for example, a method shown in FIG. 10 is employed in manufacturing an optically coupled semiconductor device including an insulating film between a light emitting side lead frame and a light receiving side lead frame.
[0003]
In this method, the light receiving element 102 is mounted on the light receiving side lead frame 101 and the bonding wire 105 is bonded. Thereafter, a light transmissive resin 106 is applied to the upper surface of the light receiving element 102 and an insulating film 107 is mounted. Then, the light receiving side lead frame 101 is cured to cure the light transmissive resin 106. Similarly, the light emitting element 104 is mounted on the light emitting side lead frame 103, the bonding wire 105 is bonded, and the light transmitting resin 106 is applied. Then, the light receiving side lead frame 101 and the light emitting side lead frame 103 are opposed to each other to assemble an optically coupled semiconductor device.
[0004]
However, in this method, when the insulating film 107 is mounted on the light receiving side lead frame 101, the insulating film 107 is mounted on the light-transmitting resin 106. The mounted insulating film 107 starts to tilt by its own weight, and finally In particular, the first support point 108 that is the edge portion of the island and the second support point 109 that is the top of the bonding wire 105 are supported.
[0005]
Therefore, the inclination of the insulating film 107 is not constant depending on the mounting position of the insulating film 107, and is inclined in various directions. Further, the insulating film 107 is supported by the first support point 108 and the second support point 9, but the second support point 109 is the top of the bonding wire 105, and therefore, when the insulating film 107 is mounted, Alternatively, the bonding wire 105 may be deformed by the load, which may adversely affect the quality of the optically coupled semiconductor device.
[0006]
Further, in the method of manufacturing by inserting the insulating film 107 in this way, it is desirable to increase the creepage distance and increase the withstand voltage by increasing the size of the insulating film 107 as much as possible. However, the conventional method has a problem that it is difficult to improve the withstand voltage because the insulating film 107 becomes more unstable by increasing the insulating film 107.
[0007]
For example, in the optically coupled semiconductor device described in Patent Document 1, as shown in FIG. 11, the shape of the insulating film 213 provided between the light emitting element 210 and the light receiving element 211 is a three-dimensional structure having saddle-shaped side portions. Thus, the internal creepage distance is increased to improve the withstand voltage.
[0008]
In this method, a light-transmitting resin 212 is placed on the light emitting element 210, and an insulating film 213 having a bowl-shaped side portion is placed thereon. Next, the lead-out leads 214 and 215 are fixed so that the light receiving element 211 faces each other, and the element is sealed with a light shielding resin 216.
[0009]
In this method, although a temporary effect of improving the withstand voltage can be obtained, as described above, the bonding wire 217 is deformed by the dead weight of the insulating film 213, and only by placing it on the light-transmitting resin 212. There is a problem that it is very difficult to maintain a stable shape of the insulating film 213, and it is difficult to obtain a quantitative withstand voltage value because a stable shape cannot be obtained.
[0010]
Therefore, in the optically coupled semiconductor device described in Patent Document 2, the light emitting diode 303 is die-bonded and wired to the island portion 309 of the primary lead frame 311 as shown in FIGS. The transparent silicon resin 304 is potted, and the primary insulating film 306 is mounted on the stopper portion 313 of the lead frame. Next, after the same assembly is performed on the secondary lead frame, the primary and secondary insulating films 306 and 307 are joined with the transparent gel silicone resin 308 so that the light emitting diode 303 and the light receiving element 302 face each other. By stabilizing the insulating films 306 and 307 and preventing contact with the bonding wires 315 and 316, deformation of the bonding wire as described above can be prevented, and a quantitative withstand voltage value can be obtained. A possible configuration is proposed.
[0011]
[Patent Document 1]
JP 59-111377 A
[Patent Document 2]
JP-A-5-327004 [0013]
[Problems to be solved by the invention]
However, in the optically coupled semiconductor device described in Patent Document 2, since the lead frame stopper portions 313 and 314 exist, the flow of the light-shielding resin 320 is prevented during resin sealing, and the light-shielding resin 320 is not filled. There is a possibility that an optically coupled semiconductor device having high quality and high withstand voltage cannot be obtained.
[0014]
Accordingly, the present invention has been made in view of the problems in the above-described conventional optically coupled semiconductor devices and the like, and prevents the unfilling of a light-shielding resin, and manufactures an optically coupled semiconductor device having high quality and high withstand voltage. It aims to provide a method.
[0015]
[Means for Solving the Problems]
To achieve the above object, the present invention provides a light emitting side lead frame on which a light emitting element is mounted, a light receiving side lead frame on which a light receiving element is mounted at a position opposite to the light emitting element, the light receiving side lead frame, and the light emitting element. In the method of manufacturing an optically coupled semiconductor device including an insulating film between the side lead frame and the light receiving side lead frame or the light emitting side lead frame, a support means for supporting the insulating film is provided. A light-transmitting resin is applied to the light-emitting element and the light-receiving element to perform a curing process, the support means is removed, a light-emitting side lead frame on which the light-emitting element is mounted, a light-receiving side lead frame on which the light-receiving element is mounted, The insulating film and the light transmitting resin are sealed with a light blocking resin.
[0016]
According to the present invention, the insulating film is supported by the support means provided on either the light-receiving side lead frame or the light-emitting side lead frame, and the light-transmitting resin and the light-receiving element are coated with the light-transmitting resin and cured. Therefore, it is possible to prevent contact between the insulating film and the bonding wire, stabilize the insulating film, and obtain a quantitative withstand voltage value. In addition to this, the support means is removed after the light-transmitting resin is cured, so that when the resin is sealed with the light-shielding resin, the flow of the light-shielding resin is not hindered and the light-shielding resin is not filled. Therefore, an optically coupled semiconductor device with high quality and high withstand voltage can be obtained.
[0017]
In the method for manufacturing an optically coupled semiconductor device, the supporting means may be a plate-like member extending from one of the light receiving side lead frame and the light emitting side lead frame. The plate member is preferably bent at the same angle as the dimple angle of one of the light receiving side lead frame and the light emitting side lead frame.
[0018]
Furthermore, the method for manufacturing an optically coupled semiconductor device according to the present invention can also be applied to an optically coupled semiconductor device having a plurality of leads.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings.
[0020]
1 to 8 show an embodiment of a method for manufacturing an optically coupled semiconductor device according to the present invention. This optically coupled semiconductor device includes an insulating film between a light receiving side lead frame and a light emitting side lead frame.
[0021]
As shown in FIGS. 1 and 3, stoppers 22 a and 22 b are extended from the tie bar portion 21 in the light receiving side lead frame 16 in the horizontal direction. The stopper 22b extends from the tie bar portion 21, is bent at the same angle as the dimple angle 25 of the light receiving side lead frame 16, and is bent in the horizontal direction at an arbitrary position.
[0022]
A light receiving element 17 is mounted on the light receiving side lead frame 16, a bonding wire 19 is bonded, and a light transmitting resin 18 is applied to the upper surface of the light receiving element 17. When the insulating film 20 is mounted, the insulating film 20 is mounted so as to be in contact with the stopper 22a extending from the tie bar portion 21. After mounting at a position where it comes into contact with the stopper 22a, the insulating film 20 is tilted about the second support point 24, which is a contact point with the stopper 22a, by its own weight, and as shown in FIG. 2, the first support point is the tip of the stopper 22b. 23 and supported at two points. Thus, the first support point 23 and the second support point 24 always provide a constant inclination, and the insulating film 20 can be mounted in a stable state without variation.
[0023]
Furthermore, the mounting position of the insulating film 20 can be kept high by the stoppers 22a and 22b, the contact with the bonding wire 19 is eliminated, and the bonding wire 19 can be prevented from being damaged. Moreover, since the insulating film 20 does not touch the bonding wire 19 directly, the bonding wire 19 is not deformed by an impact or the like when mounting the insulating film. As a result, it is possible to provide an optically coupled semiconductor device with higher quality than before. Moreover, since it is supported and stabilized by the first support point 23 and the second support point 24 of the stoppers 22a and 22b, the size of the insulating film 20 can be increased and a high withstand voltage can be obtained.
[0024]
As shown in FIG. 4, a light emitting element 27 is mounted on another light emitting side lead frame 26 in the same manner as the light receiving side lead frame 16, and a bonding wire 29 is bonded thereto. Further, a light transmissive resin 28 is applied so as to cover the light emitting element 27.
[0025]
The two light receiving side lead frames 16 and the light emitting side lead frame 26 are opposed to each other, and the light transmitting resin 28 applied to the light emitting side lead frame 26 is coupled to the insulating film 20 mounted on the light receiving side lead frame 14. Thereafter, the light receiving side lead frame 16 and the light emitting side lead frame 26 which are opposed to each other are subjected to a curing process, and the light transmissive resins 18 and 28 are cured. Further, as shown in FIGS. 5 and 6, the stoppers 22a and 22b extending from the tie bar portion 21 of the light receiving side lead frame 16 are punched and cut from the top to the bottom by the cutting punch 31, as shown in FIG. Then, as shown in FIG. 8, sealing with a light-shielding resin 32 completes the optically coupled semiconductor device.
[0026]
Here, since the light-transmitting resins 18 and 28 are already cured by the curing process, the mounting state of the insulating film 20 does not change even if the stoppers 22a and 22b are cut, and the stoppers 22a and 22b are cut. It doesn't matter.
[0027]
Since the stoppers 22a and 22b can be cut, the stoppers 22a and 22b are sealed with the light-shielding resin 31 after the insulating film 20 is mounted and the two lead frames 16 and 26 are opposed to each other. There is nothing.
[0028]
Furthermore, since the stoppers 22a and 22b are cut from the tie bar portion 21, the flow of the light shielding resin 32 is not hindered during resin sealing, and the problem of unfilling the light shielding resin 32 does not occur.
[0029]
In each of the above embodiments, the same structure can be adopted even when the number of leads of the optically coupled semiconductor device is increased.
[0030]
That is, as shown in FIG. 9, even when the number of leads is increased, the manufacturing process is substantially the same as that of the above embodiment, except that the number of stoppers 34a to 34c is increased and the insulating film 35 is increased. It is a point that supports.
[0031]
As shown in the figure, when the number of leads 33 increases, the stoppers 34a and 34b are not necessarily arranged near the center of the apparatus. In the present embodiment, a plurality of stoppers 34 a and 34 b are horizontally extended from between the leads 33 from the tie bar portion 36. The stopper 34 c extends in the horizontal direction at an arbitrary position along the dimple angle of the tie bar portion 36. Thereby, the insulating film 35 is supported by four points of the support points 37-40.
[0032]
Then, a light-transmitting resin is applied to the light-emitting element and the light-receiving element through the same steps as in the above-described embodiment, a curing process is performed, the stoppers 34a to 34c are removed, and sealing is performed with a light-shielding resin. A coupled semiconductor device can be manufactured, and the same effects as those of the above-described embodiment can be obtained.
[0033]
In the present embodiment, as the number of leads 33 increases, the size of the insulating film 35 also increases. With such a structure, even if the insulating film 35 becomes large, it can be mounted stably. . As a result, an optically coupled semiconductor device having a higher withstand voltage can be provided.
[0034]
【The invention's effect】
As described above, according to the present invention, it is possible to provide a method for manufacturing a high-quality and high withstand voltage optically coupled semiconductor device while preventing unfilling of the light-shielding resin.
[Brief description of the drawings]
FIG. 1 is a diagram showing a mounted state of an insulating film in a method for manufacturing an optically coupled semiconductor device according to the present invention.
FIG. 2 is a view showing a state in which an insulating film is supported in the method for manufacturing an optically coupled semiconductor device according to the present invention.
FIG. 3 is a view taken along arrow AA in FIG. 2;
FIG. 4 is a view showing a state in which lead frames are opposed to each other in the method for manufacturing an optically coupled semiconductor device according to the present invention.
FIG. 5 is a view showing a state in which a stopper is cut in the method of manufacturing an optically coupled semiconductor device according to the present invention.
6 is a view taken along arrow BB in FIG. 5;
FIG. 7 is a view showing a state after a stopper is cut in the method of manufacturing an optically coupled semiconductor device according to the present invention.
FIG. 8 is a view showing a state where resin sealing is performed in the method of manufacturing an optically coupled semiconductor device according to the present invention.
FIG. 9 is a plan view showing a state after mounting an insulating film in another embodiment of the method for manufacturing an optically coupled semiconductor device according to the present invention.
FIG. 10 is a diagram showing an example of a conventional method for manufacturing an optically coupled semiconductor device.
FIG. 11 is a diagram showing another example of a conventional method for manufacturing an optically coupled semiconductor device.
FIG. 12 is a diagram showing another example of a conventional method for manufacturing an optically coupled semiconductor device.
13 is a perspective view showing a lead frame stopper and the like in the method for manufacturing the optically coupled semiconductor device of FIG. 12;
[Explanation of symbols]
16 Light receiving side lead frame 17 Light receiving element 18 Light transmitting resin 19 Bonding wire 20 Insulating film 21 Tie bar portion 22a Stopper 22b Stopper 23 First support point 24 Second support point 25 Dimple angle 26 Light emitting side lead frame 27 Light emitting element 28 Light transmission Resin 29 Bonding wire 31 Cutting punch 32 Light blocking resin 33 Lead 34a Stopper 34b Stopper 34c Stopper 35 Insulating film 37-40 Supporting point

Claims (4)

発光素子を搭載した発光側リードフレームと、前記発光素子に相対向する位置に受光素子を搭載した受光側リードフレームと、該受光側リードフレームと前記発光側リードフレームとの間に絶縁性フィルムを備えた光結合半導体装置の製造方法において、
前記受光側リードフレームと前記発光側リードフレームのいずれか一方に、前記絶縁性フィルムを支持する支持手段を設け、
前記発光素子及び受光素子に光透過性樹脂を塗布して硬化処理を施し、
前記支持手段を除去し、
前記発光素子を搭載した発光側リードフレーム、前記受光素子を搭載した受光側リードフレーム、前記絶縁性フィルム及び前記光透過性樹脂を遮光性樹脂で封止することを特徴とする光結合半導体装置の製造方法。A light emitting side lead frame on which a light emitting element is mounted, a light receiving side lead frame on which a light receiving element is mounted at a position opposite to the light emitting element, and an insulating film between the light receiving side lead frame and the light emitting side lead frame In the manufacturing method of the optically coupled semiconductor device provided,
A support means for supporting the insulating film is provided on one of the light receiving side lead frame and the light emitting side lead frame,
Applying a light-transmitting resin to the light-emitting element and the light-receiving element and applying a curing treatment,
Removing said support means,
An optically coupled semiconductor device comprising: a light emitting side lead frame on which the light emitting element is mounted; a light receiving side lead frame on which the light receiving element is mounted; the insulating film; and the light transmitting resin are sealed with a light blocking resin. Production method. 前記支持手段は、前記受光側リードフレームと前記発光側リードフレームのいずれか一方のタイバー部から延設された板状部材であることを特徴とする請求項１記載の光結合半導体装置の製造方法。2. The method of manufacturing an optically coupled semiconductor device according to claim 1, wherein the supporting means is a plate-like member extending from one of the light receiving side lead frame and the light emitting side lead frame. . 前記板状部材は、前記受光側リードフレームと前記発光側リードフレームのいずれか一方のタイバー部のディンプル角と同一の角度で曲折されることを特徴とする請求項２記載の光結合半導体装置の製造方法。3. The optically coupled semiconductor device according to claim 2, wherein the plate-like member is bent at the same angle as a dimple angle of one of the light receiving side lead frame and the light emitting side lead frame. Production method. 前記半導体装置は、複数のリードを備えることを特徴とする請求項１、２または３記載の光結合半導体装置の製造方法。The method of manufacturing an optically coupled semiconductor device according to claim 1, wherein the semiconductor device includes a plurality of leads.
JP2002349654A 2002-12-02 2002-12-02 Method for manufacturing optically coupled semiconductor device Expired - Fee Related JP4205412B2 (en)

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