JP4199996B2 - Sample holder for charged particle beam equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
In the present invention, a sample for observation with a transmission electron microscope or a scanning electron microscope is processed into a thin film or a cross section by a focused ion beam (hereinafter referred to as FIB) processing apparatus, and further, chemical polishing, electrolytic polishing, etc. according to the observation purpose and sample material. The present invention relates to a sample stage for performing additional sample processing.
[0002]
[Prior art]
Conventionally, there is Patent Document 1 as a sample stage for supporting a transmission electron microscope observation sample by an FIB processing apparatus. In the sample stage in this technique, there is a problem of mechanical stability of the sample when the sample extracted in the FIB processing apparatus is observed and analyzed with a transmission electron microscope, and X-rays generated from the sample stage irradiated with the electron beam (system peak). )), There are various considerations, all of which are several tens of μm only by various means of fixing the sample to a semi-disc-shaped sample stage called a notch mesh. It is not a technology related to a sample stage dedicated to ultra-small samples. Also in the technique of Patent Document 2, consideration is given to a method related to a sample stage for supporting a transmission electron microscope observation sample and a fixing method of the sample, but the sample surface is inevitably necessary when processing the sample using the FIB processing apparatus. So-called redeposition, in which the ion irradiation damage layer generated on the surface of the sample is removed, or the ion beam that has passed near the sample cross section or the ion beam scattered on the sample cross section sputters the sample bottom or sample stage and reattaches to the sample processing surface as a contaminant. This issue is not considered.
[0003]
[Patent Document 1]
JP 2002-319363 A [Patent Document 2]
Japanese Patent Laid-Open No. 2002-25490
[Problems to be solved by the invention]
An object of the present invention is to solve the above redeposition problem that occurs during focused ion beam processing, and during FIB processing, an ion beam irradiation damage layer that is inevitably formed on the outermost surface of the sample is formed by another sample polishing method. Providing an easily removable sample stage, enabling shaping to any shape without changing the essence of the sample, fine structure analysis, elemental analysis and chemical bonding state using transmission electron microscope and scanning electron microscope It is to improve analysis accuracy such as analysis.
[0005]
[Means for Solving the Problems]
The purpose is to make the sample stage that supports the sample to be thinned with a focused ion beam into a shape that is unlikely to cause sample damage or sample contamination during FIB processing, and thin film processing by other methods such as electrolytic polishing and chemical polishing is also possible. This is achieved by making the material and shape that can be used.
[0006]
An ion source having a liquid metal, a high voltage power source for accelerating an ion beam emitted from the ion source, a lens for focusing the ion beam on the sample surface, and scanning the focused ion beam on the sample surface A focused ion beam processing apparatus having a sample chamber for inserting a deflection apparatus and a sample holder to which a sample is fixed. A sample holder for a sample holder, wherein the shape of the sample holder is cylindrical or prismatic. The sample holder sample holder allows a sample holder on which a micro sample is placed to be inserted into or removed from the sample holder with a simple operation without applying impact or stress to the sample. Further, when the sample is observed while being tilted or rotated in the transmission electron microscope, it is possible to minimize the sample stage from interfering with the electron beam path. Furthermore, it is also effective in reducing sample contamination caused by sputtering of the sample stage by the scattered ion beam, which is always a problem during FIB processing.
[0007]
In the focused ion beam processing apparatus sample holder sample holder, the tip shape of the sample base is a cone or a pyramid. The focused ion beam processing apparatus sample holder sample holder is the above-mentioned focused ion beam processing apparatus sample holder. This promotes the effect of preventing contamination of the sample processing surface by sputtering of the sample stage to be solved by the sample stage. In addition, when elemental analysis is performed using the characteristic X-ray analysis function of a transmission electron microscope or scanning electron microscope, there is also an effect of minimizing a noise signal from the sample stage that causes a reduction in analysis accuracy.
[0008]
The sample holder for the focused ion beam processing apparatus sample holder is flattened at the forefront of the sample holder, and the sample holder for the focused ion beam processing apparatus is provided on a cylindrical or prismatic sample stage. This is a highly effective technique for ensuring the mechanical stability of a micro sample when the micro sample is bonded and fixed to the most conical or pyramidal tip.
[0009]
In the above-mentioned focused ion beam processing apparatus sample holder sample holder, the material is a conductor. The focused ion beam processing apparatus sample holder sample stage is characterized in that the surface of the FIB processed sample is damaged or contaminated during FIB processing. When received, this is an important technique for removing the damage or contamination by an electropolishing method or the like.
[0010]
In the above-mentioned focused ion beam processing apparatus sample holder sample holder, the material stand has corrosion resistance to the chemical abrasive of the sample. When the surface is damaged or contaminated during the FIB processing, it is a technique that plays an important role in removing the damage or contamination using a chemical abrasive such as a strong acid.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
The present invention will be described below with reference to the drawings. FIG. 1 shows a configuration diagram of a FIB processing apparatus to which the present invention is applied. The FIB processing apparatus 1 includes an ion gun 2, a condenser lens 3, a diaphragm 4, a scanning electrode 5, and an objective lens 6. In the sample chamber of the FIB processing apparatus 1, a sample holder 10 to which a sample 9 is attached, a secondary electron detector 7 above the sample holder 10, a protective film for the sample 9, and a material for fixing the sample 9 to the sample stage. Alder 8, a micro probe 12 for carrying a micro sample produced by FIB processing is attached.
[0012]
A scanning image display device 13 is connected to the secondary electron detector 7. The scanning image display device 13 is connected to the scanning electrode 5 via the scanning electrode control unit 14. The microprobe 12 is connected to a microprobe control device 15 for controlling the position of the microprobe 12. The sample holder 10 is connected to the holder control unit 11.
[0013]
The ion beam 16 emitted from the ion gun 2 is converged by the condenser lens 3 and the diaphragm 4, passes through the objective lens 6, and is irradiated onto the sample 9. The scanning electrode 5 above the objective lens 6 deflects and scans the ion beam 16 incident on the sample 9 according to an instruction from the scanning electrode control unit 14.
[0014]
When the sample 9 is irradiated with the ion beam 16, secondary electrons are generated from the sample 9. The generated secondary electrons are detected by the secondary electron detector 7 and displayed on the scanning image display device 13 as a sample image.
[0015]
The gas emitted from the sample holder 8 in the direction of the sample 9 is decomposed by irradiation with the ion beam 16, and metal is deposited on the irradiation region of the ion beam 16 on the surface of the sample 9. This deposited film is used for forming a protective film on the surface of the sample 9 before FIB processing and fixing the micro sample to the sample stage. The setting of the processing position of the sample 9 can be freely changed by moving the position of the sample holder 8 by the holder control unit 11 connected to the sample holder 8.
[0016]
FIG. 2 is a top view (a) and a cross-sectional view (b) of the tip portion of the sample holder 10 for the FIB processing apparatus to which the sample stage of the present invention is attached. The sample holder 10 is provided with a cylindrical sample stage insertion portion 17. A sample 21 is fixed to the tip of the sample table 18 inserted into the sample table insertion portion 17. The ion beam 16 is irradiated from above the sample 21 to process the sample 21.
[0017]
In the sample holder of this embodiment, the sample stage 18 (sample support part) and the sample stage insertion part 17 (holding part) are configured to be detachable, and the sample stage 18 is removed and cleaned as will be described later. It is possible. Further, the sample stage 18 has a thin tip part for holding the sample and a thick part to be held by the sample stage insertion part 17 (for example, a cone shape or a pyramid shape). Such a configuration facilitates handling when cleaning a minute sample. The mechanism for attaching and detaching the sample stage 18 may simply use the sample stage insertion part 17 as an opening for fitting the sample stage 18, or provide a member for holding the sample stage 18 in the sample stage insertion part 17. May be.
[0018]
Note that the sample holder of this embodiment includes a rotation mechanism (not shown) that rotates the sample stage 18. This rotation mechanism includes a rotation axis in a direction perpendicular to the insertion direction of the sample holder into the charged particle beam apparatus. By adopting such a rotating mechanism, processing and observation from any direction becomes possible.
[0019]
3A and 3B show a sample stage 18 and a sample stage 19 which are an embodiment of the present invention. The sample stage 18 has a main body in a columnar shape, and a tip portion is shaped into a conical shape. The sample stage 19 has a main body in a prismatic shape, and a tip portion is shaped in a pyramid shape. The columnar sample stage and the prismatic sample stage are properly used according to the shape of the sample.
[0020]
The cylindrical sample stage 18 and the sample stage 19 (rectangular columnar shape) have the same dimensions as the diameter of the cylindrical sample stage and the maximum diameter of the pyramidal sample stage so that they can be used for the same sample holder 10. FIG. 3C shows a flatly bonded sample bonding surface 20 for fixing the sample 9 provided at the most distal portions of the sample table 18 and the sample table 19. The sample 9 extracted from the bulk material using the probe 12 is moved to the sample bonding surface 20 and bonded and fixed by metal deposition.
[0021]
In FIG. 3D, the sample 9 fixed by the sample 21 to the sample bonding surface 20 provided at the most distal portion of the sample stage 18 and the sample stage 19 is processed by the Ar ion beam 22 in the FIB processing apparatus 1. Indicates the state.
[0022]
The Ar ion beam 22 that travels downward while sputtering the side surface of the sample 9 passes through the side surface of the sample 9 and is then irradiated onto the sample stage 18. Since the portion of the sample stage 18 irradiated with the Ar ion beam 22 is inclined, the Ar ion beam 22 hitting the sample stage 18 travels downward along the slope without being reflected upward. Thus, by devising the shape of the tip of the sample stage 18, the material of the sample stage 18 sputtered by the Ar ion beam 22 can be prevented from adhering to the processed surface of the sample 9. Further, by making the size of the surface of the sample bonding surface 20 equal to or smaller than the bottom surface of the sample 9, it is possible to prevent the sample stage 18 from being sputtered by the Ar ion beam 22.
[0023]
FIG. 4 shows the function of the sample stage when the ion beam damage layer generated on the sample surface during FIB processing is removed by another sample pretreatment method. In particular, when a liquid metal is used for the ion source, an ion beam damage layer may be formed. However, according to this embodiment, the damage can be easily eliminated.
[0024]
FIG. 4A shows the sample 9 and the sample stage 18 when the Ga ion beam irradiation damaged layer existing on the surface of the sample 9 once processed by using the FIB processing apparatus is removed by the ion sputtering method using the Ar ion beam 22. And the positional relationship between the Ar ion beam 22 and FIG. In this case as well, as with the FIB processing, the Ar ion beam 22 travels straight in the traveling direction while being slightly refracted without being reflected by the sample stage 18, so that contamination adheres to the processed surface of the sample 9 due to the reflected ion beam, etc. do not do.
[0025]
FIG. 4B shows the sample 9, the sample stage 18, the chemical polishing liquid container 23, and the polishing liquid 24 when the surface of the sample 9 once processed using the FIB processing apparatus is additionally etched by the chemical polishing method. In this case, since the etching solution containing a strong acid such as sulfuric acid or hydrochloric acid is used for the polishing solution 24, a material having excellent corrosion resistance such as ceramics is used for the sample stage 18. Thereby, contamination of the sample 9 due to elution of the sample stage 18 during chemical polishing can be prevented.
[0026]
FIG. 4 (c) shows the sample 9 and the sample stage 18, the electrolytic polishing liquid container 25, the electrolytic polishing liquid 26, the direct current power supply 27, and the direct current power source 27 when the surface of the sample 9 once processed using the FIB processing apparatus is etched by the electrolytic polishing method. A cathode plate 28 is shown.
[0027]
In this case, since the sample stage 18 is required to act as a conductor for transmitting the current from the DC power source 27 to the sample 9, a metal is used for the sample stage 18. This method is used when the sample 9 is a metal. When it is expected that elution of the sample stage 18 into the electropolishing liquid 26 will cause contamination of the sample 9, the material of the sample stage 18 is the same as that of the sample 9. Shall.
[0028]
Metal cations eluted from the sample 9 move to the cathode plate 28 through the polishing liquid 24. Unlike the FIB processing method or the ion milling method in which the electrolytic polishing method directly irradiates a sample surface with a high voltage in a vacuum in a vacuum, stress that causes crystal defects is not applied. Therefore, it has the most excellent characteristics as a method for producing a clean thin film sample for evaluating the microstructure near the surface of the metal material.
[0029]
However, the etching amount is small and the specific region cannot be thinned selectively. The combination with the FIB processing method makes it possible to produce a clean thin film sample quickly.
[0030]
【The invention's effect】
By using the sample holder sample holder for the FIB processing apparatus of the present invention, it is possible to minimize sample contamination and ion beam damage that occur during FIB processing. Even if contamination or damage occurs during FIB processing, it is possible to completely remove the processed sample by another sample polishing method, and the FIB processed sample, which has been considered impossible in the past, is free from contamination and damage. Is realized.
[Brief description of the drawings]
FIG. 1 is a basic configuration diagram of an FIB processing apparatus for explaining the technology of the present invention.
FIG. 2 is an FIB processing apparatus sample table for explaining the technology of the present invention.
FIG. 3 is a side view of a sample table according to an embodiment of the present invention.
FIG. 4 is a conceptual diagram of an example of using a sample stage according to an embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... FIB processing apparatus, 2 ... Ion gun, 3 ... Condenser lens, 4 ... Diaphragm, 5 ... Scan electrode, 6 ... Objective lens, 7 ... Secondary electron detector, 8, 10 ... Sample holder, 9, 21 ... Sample DESCRIPTION OF SYMBOLS 11 ... Sample holder control part, 12 ... Microprobe, 13 ... Scanning image display apparatus, 14 ... Scanning electrode control part, 15 ... Microprobe control apparatus, 16 ... Ion beam, 17 ... Sample stand insertion part, 18 ... Sample stand (Cylindrical shape), 19 ... sample stand (prism shape), 20 ... sample adhesion surface, 22 ... Ar ion beam, 23 ... chemical polishing liquid container, 24, 26 ... chemical polishing liquid, 25 ... electrolytic polishing liquid container, 27 ... Power source, 28 ... cathode plate.

Claims (5)

Prepare a sample holder with a conical sample support,
Holding the sample at the conical tip,
The sample held in the sample holder is irradiated with an ion beam to process the sample,
Wherein the front end portion of the conical shape by irradiating the Ar ion beam to remove the ion beam irradiation damage layer on the sample held on the sample holder, the method sample processing. Prepare a sample holder including a pyramid-shaped sample support,
Holding the sample at the tip of the pyramid shape,
The sample held in the sample holder is irradiated with an ion beam to process the sample,
Wherein the front end portion of the conical shape by irradiating the Ar ion beam to remove the ion beam irradiation damage layer on the sample held on the sample holder, the method sample processing. A sample support part capable of holding the sample and a holding part capable of holding the sample support part, wherein the tip end part of the sample support part is thin and the held part held by the holding part of the sample support part is formed thick Preparing a sample holder for holding the sample at the tip ,
Holding the sample at the tip of the sample support,
The sample held in the sample holder is irradiated with an ion beam to process the sample,
Wherein the front end portion of the specimen support part, by irradiating the Ar ion beam to remove the ion beam irradiation damage layer on the sample held on the sample holder, the method sample processing. The sample processing method according to any one of claims 1 to 3,
The method according to claim 1, wherein the size of the surface of the sample bonding surface at the tip of the holder is equal to or smaller than the bottom surface of the sample. A sample holder used in the sample processing method according to claim 1,
A sample holder in which the tip of a sample support portion capable of holding a sample is formed thin.

Images