JP4179174B2 - Imaging device, manufacturing method thereof, and mounting structure thereof - Google Patents

Description

  The present invention relates to an imaging device, a manufacturing method thereof, and a mounting structure thereof.

  In the mounting structure of a conventional imaging device, a photosensor is mounted on the upper surface of a circuit board, and a semiconductor device having a function as a peripheral drive circuit of the photosensor and a chip component made up of a resistor, a capacitor, etc. are mounted on the lower surface of the circuit board. However, there are semiconductor devices and chip parts made of resistors, capacitors, and the like covered with a sealing film (see, for example, Patent Document 1).

JP 2003-264274 A

  By the way, in the mounting structure of the image pickup apparatus described in Patent Document 1, the upper surface of the optical sensor mounted on the upper surface of the circuit board becomes the image pickup surface (photoelectric conversion device region). The optical sensor and the circuit board are connected by a bonding wire or a flexible wiring board, and there is a problem that the mounting of the optical sensor is troublesome.

  Accordingly, an object of the present invention is to provide an imaging device capable of easily mounting an optical sensor, a manufacturing method thereof, and a mounting structure thereof.

  In order to achieve the above object, the present invention is characterized in that an optical sensor having a photoelectric conversion device region on its upper surface is mounted on a semiconductor structure via an external connection electrode provided on its lower surface. It is.

  According to the present invention, since the photosensor having the photoelectric conversion device region on the upper surface is mounted on the semiconductor structure via the external connection electrode provided on the lower surface, the photoelectric conversion is performed on the upper surface of the photosensor. Even if the device region is provided, it can be mounted without using a bonding wire or a flexible wiring board. Therefore, the optical sensor can be mounted easily.

  FIG. 1 is a sectional view of a mounting structure of an image pickup apparatus as an embodiment of the present invention. In this mounting structure of the imaging device, the imaging device 10 is mounted on the circuit board 1. The circuit board 1 is provided with a plurality of connection pads 3 made of an aluminum-based metal or the like on an upper surface of an insulating substrate 2 made of a glass cloth base epoxy resin, etc. An overcoat film 4 made of a resist or the like is provided, and a central portion of the connection pad 3 is exposed through an opening 5 provided in the overcoat film 4.

  The imaging apparatus 10 includes an optical sensor 11 and a semiconductor structure 31 having a function as a peripheral drive circuit for the optical sensor 11. First, the configuration of the optical sensor 11 will be described. The photosensor 11 includes a silicon substrate (semiconductor substrate) 12. A photoelectric conversion device region 13 including elements such as a CCD (charge coupled device), a photodiode, and a phototransistor is provided at the center of the upper surface of the silicon substrate 12, and a plurality of connection pads made of aluminum-based metal or the like are provided at the periphery of the upper surface. 14 is connected to the photoelectric conversion device region 13.

  A first insulating film 15 made of silicon oxide or the like is provided on the upper surface of the silicon substrate 12 except for the central portion of the connection pad 14. The central portion of the connection pad 14 has an opening 16 formed in the first insulating film 15. Is exposed through. A second insulating film 17 made of epoxy resin, polyimide resin, or the like is provided on the upper surface of the first insulating film 15 and the periphery of the silicon substrate 12. In this case, the lower surface of the second insulating film 17 provided outside the peripheral side surface of the silicon substrate 12 is flush with the lower surface of the silicon substrate 12.

  An opening 18 is provided in the second insulating film 17 in a portion corresponding to the photoelectric conversion device region 13. An opening 19 is provided in the second insulating film 17 in a portion corresponding to the opening 16 of the first insulating film 15. A through hole 20 is provided at a predetermined location of the second insulating film 17 provided outside the peripheral side surface of the silicon substrate 12.

A base metal layer 21 made of copper or the like is provided on the upper surface of the second insulating film 17. A wiring 22 made of copper is provided on the entire upper surface of the base metal layer 21. One end of the wiring 22 including the base metal layer 21 is connected to the connection pad 14 through the opening 19 of the first insulating film 15. The other end of the wiring 22 including the base metal layer 21 is integrally connected to an external connection electrode 23 formed of a base metal layer 23a and a copper layer 23b provided in the through hole 20 of the first insulating film 15. Has been. In this case, the lower surface of the external connection electrode 23 is flush with the lower surface of the second insulating film 17. A solder ball 24 is provided on the lower surface of the external connection electrode 23.

  Next, the configuration of the semiconductor structure 31 will be described. The semiconductor structure 31 includes a silicon substrate (semiconductor substrate) 32. An integrated circuit 33 having a predetermined function is provided at the center of the upper surface of the silicon substrate 32, and a plurality of connection pads 34 made of aluminum metal or the like are connected to the integrated circuit 33 at the periphery of the upper surface. A first insulating film 35 made of silicon oxide or the like is provided on the upper surface of the silicon substrate 32 excluding the central portion of the connection pad 34, and an opening 36 provided in the first insulating film 35 is provided in the central portion of the connection pad 34. Is exposed through.

  A second insulating film 37 made of epoxy resin, polyimide resin, or the like is provided on the upper surface of the first insulating film 35 and the periphery of the silicon substrate 32. In this case, the lower surface of the second insulating film 37 provided outside the peripheral side surface of the silicon substrate 32 is flush with the lower surface of the silicon substrate 32. An opening 38 is provided in the second insulating film 37 in a portion corresponding to the opening 36 of the first insulating film 35. A through hole 39 is provided at a predetermined location of the second insulating film 37 provided outside the peripheral side surface of the silicon substrate 32.

  A base metal layer 40 made of copper or the like is provided on the upper surface of the second insulating film 37. A wiring 41 made of copper is provided on the entire upper surface of the base metal layer 40. One end of the wiring 41 including the base metal layer 40 is connected to the connection pad 34 through the openings 36 and 38 of the first and second insulating films 35 and 37. The other end of a part of the wiring 41 including the base metal layer 40 is provided on the lower surface side external connection electrode 42 formed of the base metal layer 42 a and the copper layer 42 b provided in the through hole 39 of the second insulating film 37. Are connected integrally. In this case, the lower surface of the lower surface side external connection electrode 42 is flush with the lower surface of the second insulating film 37. A solder ball 43 is provided on the lower surface of the lower surface side external connection electrode 42.

  A columnar electrode (upper surface side external connection electrode) 44 made of copper is provided on the upper surface of a part of the connection pad portion of the wiring 41. A sealing film 45 made of an epoxy resin, a polyimide resin, or the like is formed on the upper surface of the second insulating film 37 including the columnar electrode 44 and the wiring 41 and its periphery so that the upper surface is flush with the upper surface of the columnar electrode 44. Is provided. In this case, the lower surface of the sealing film 45 provided outside the private side surface of the second insulating film 37 is flush with the lower surface of the second insulating film 37.

  The optical sensor 11 is mounted on the semiconductor structure 31 by the solder ball 24 being bonded to the upper surface of the columnar electrode 44 of the semiconductor structure 31. Further, the imaging device 10 including the optical sensor 11 and the semiconductor structure 31 is mounted on the circuit board 1 by bonding the solder balls 43 of the semiconductor structure 31 to the connection pads 3 of the circuit board 1. Yes.

  A lens holder 51 is disposed on the upper surface of the sealing film 45 of the semiconductor structure 31 around the optical sensor 11. A support cylinder 53 that supports a lens 52 disposed above the photoelectric conversion device region 13 of the optical sensor 11 is rotatably attached to the lens holder 51. An infrared absorption filter 54 is provided between the optical sensor 11 and the lens 52 in the lens holder 51.

  Next, an example of a method for manufacturing the imaging device 10 including the optical sensor 11 and the semiconductor structure 31 will be described. First, an example of a method for manufacturing the optical sensor 11 will be described. First, as shown in FIG. 2, a base plate 61 made of an ultraviolet transmissive glass plate, a transparent metal plate, a transparent resin plate, or the like is provided with an adhesive layer 62 whose adhesive strength is reduced by irradiation of ultraviolet rays. prepare.

  Next, the lower surface of the silicon substrate 12 is bonded to a plurality of predetermined locations on the upper surface of the adhesive layer 62. In this case, a photoelectric conversion device region 13, a connection pad 14 made of an aluminum-based metal, and a first insulating film 15 made of silicon oxide or the like are provided on the silicon substrate 12. It is exposed through the opening 16 formed in the insulating film 15.

  Next, as shown in FIG. 3, a second insulating film made of an epoxy resin, a polyimide resin, or the like is formed on the upper surface of the adhesive layer 62 including the first insulating film 15 by a screen printing method, a spin coating method, or the like. 17 is formed. In this case, an opening 19 is formed in the second insulating film 17 in a portion corresponding to the opening 16 of the first insulating film 15. In addition, a through hole 20 is formed in a predetermined portion of the second insulating film 17 provided outside the peripheral side surface of the silicon substrate 12.

  Next, as shown in FIG. 4, the second insulating film 17 includes the upper surface of the connection pad 14 exposed through both the openings 16 and 19 and the upper surface of the adhesive layer 62 exposed through the through hole 20. A base metal layer 21 is formed on the entire top surface of the substrate. In this case, the base metal layer 21 may be only a copper layer formed by electroless plating, or may be only a copper layer formed by sputtering, and may be titanium or the like formed by sputtering. A copper layer may be formed on the thin film layer by sputtering.

  Next, a plating resist film 63 is patterned on the upper surface of the base metal layer 21. In this case, an opening 64 is formed in the plating resist film 63 in a portion corresponding to the wiring 22 formation region. Next, by performing copper electroplating using the base metal layer 21 as a plating current path, the wiring 22 is formed on the upper surface of the base metal layer 21 in the opening 64 of the plating resist film 63.

  Next, when the plating resist film 63 is peeled off, and then unnecessary portions of the base metal layer 21 are removed by etching using the wiring 22 as a mask, the base metal layer 21 is formed only under the wiring 22 as shown in FIG. Remain. In this state, the external connection electrode 23 composed of the base metal layer 23 a and the copper layer 23 b is formed in the through hole 20.

  Next, as shown in FIG. 6, an opening 18 is formed in the second insulating film 17 in a portion corresponding to the photoelectric conversion device region 13 by photolithography. In addition, you may form the opening part 18 in the process shown in FIG. Next, when ultraviolet rays are irradiated from the lower surface side of the base plate 61 to reduce the adhesive force of the adhesive layer 62 and the base plate 61 and the adhesive layer 62 are peeled off, the result is as shown in FIG.

  In this state, the lower surface of the second insulating film 17 formed outside the peripheral side surface of the silicon substrate 12 and the lower surface of the external connection electrode 23 formed in the through hole 20 are flush with the lower surface of the silicon substrate 12. It has become. Next, when an adhesive is attached to the lower surface of the external connection electrode 23 formed in the through hole 20, it is removed by plasma etching or the like.

  Next, as shown in FIG. 8, solder balls 24 are formed on the lower surface of the external connection electrode 23 formed in the through hole 20. Next, as shown in FIG. 9, when the second insulating film 17 is cut between the silicon substrates 12 adjacent to each other, the external connection electrode 23 is formed outside the peripheral side surface of the silicon substrate 12 as shown in FIG. A plurality of optical sensors 11 are obtained.

  Next, an example of a method for manufacturing the semiconductor structure 31 will be described. First, as shown in FIG. 10, a base plate 71 made of an ultraviolet light transmissive glass plate, a transparent metal plate, a transparent resin plate, or the like is provided with an adhesive layer 72 whose adhesive strength is reduced by irradiation with ultraviolet rays. prepare. In FIG. 10, an area indicated by reference numeral 73 is an area corresponding to a dicing line.

  Next, the lower surface of the silicon substrate 32 is bonded to each of a plurality of predetermined locations on the upper surface of the adhesive layer 72. In this case, a connection pad 34 made of an integrated circuit, aluminum-based metal, or the like and a first insulating film 35 made of silicon oxide or the like are provided on the silicon substrate 32, and the central portion of the connection pad 34 is the first insulating film 35. It is exposed through the opening 36 formed in the.

  Next, as shown in FIG. 11, a second insulating film made of an epoxy resin, a polyimide resin, or the like is formed on the upper surface of the adhesive layer 72 including the first insulating film 35 by a screen printing method, a spin coating method, or the like. 37 is formed. In this case, an opening 38 is formed in the second insulating film 37 in a portion corresponding to the opening 36 of the first insulating film 35. Further, a through hole 39 is formed at a predetermined location of the second insulating film 37 provided outside the peripheral side surface of the silicon substrate 32. Further, a through hole 74 is formed in the second insulating film 37 in the dicing line 73 and the regions on both sides thereof.

  Next, as shown in FIG. 12, the second insulation includes the upper surface of the connection pad 34 exposed through both openings 36 and 38 and the upper surface of the adhesive layer 72 exposed through the through holes 39 and 74. A base metal layer 40 is formed on the entire upper surface of the film 37 by electroless plating of copper or the like. Next, a plating resist film 75 is patterned on the upper surface of the base metal layer 40. In this case, an opening 76 is formed in the plating resist film 75 in a portion corresponding to the wiring 41 formation region. Next, by performing electrolytic plating of copper using the base metal layer 40 as a plating current path, the wiring 41 is formed on the upper surface of the base metal layer 40 in the opening 76 of the plating resist film 75. Next, the plating resist film 75 is peeled off.

  Next, as shown in FIG. 13, a plating resist film 77 is formed on the upper surface of the base metal layer 40 including the wiring 41. In this case, an opening 78 is formed in the plating resist film 77 in a portion corresponding to the columnar electrode 44 formation region. Next, the columnar electrode 44 is formed on the upper surface of the connection pad portion of the wiring 41 in the opening 79 of the plating resist film 77 by performing electrolytic plating of copper using the base metal layer 40 as a plating current path.

  Next, the plating resist film 77 is peeled off, and then unnecessary portions of the base metal layer 40 are removed by etching using the wiring 41 as a mask, so that the base metal layer 40 is formed only under the wiring 41 as shown in FIG. Remain. In this state, the lower surface side external connection electrode 42 made of the base metal layer 42 a and the copper layer 42 b is formed in the through hole 39.

  Next, as shown in FIG. 15, the adhesive layer 72 exposed through the entire upper surface of the protective film 12 including the columnar electrode 44 and the wiring 41 and the through hole 74 by screen printing, spin coating, die coating, or the like. A sealing film 45 made of an epoxy resin, a polyimide resin, or the like is formed on the upper surface of the substrate so that its thickness is greater than the height of the columnar electrode 44. Therefore, in this state, the upper surface of the columnar electrode 44 is covered with the sealing film 45.

  Next, the upper surface side of the sealing film 45 and the columnar electrode 44 is appropriately polished to expose the upper surface of the columnar electrode 44 and to include the exposed upper surface of the columnar electrode 44 as shown in FIG. The upper surface of the stop film 45 is flattened. Here, the reason why the upper surface side of the columnar electrode 44 is appropriately polished is that there is a variation in the height of the columnar electrode 44 formed by electrolytic plating, so this variation is eliminated and the height of the columnar electrode 44 is made uniform. It is to make it.

  Next, when ultraviolet rays are irradiated from the lower surface side of the base plate 71 to reduce the adhesive force of the adhesive layer 72 and the base plate 71 and the adhesive layer 72 are peeled off, the result is as shown in FIG. In this state, it is formed in the lower surface of the second insulating film 37 formed outside the peripheral side surface of the silicon substrate 32, the lower surface of the lower surface side external connection electrode 42 formed in the through hole 39, and the through hole 74. The lower surface of the sealing film 45 is flush with the lower surface of the silicon substrate 32. Next, when an adhesive is attached to the lower surface of the lower surface side external connection electrode 42 formed in the through hole 39, it is removed by plasma etching or the like.

  Next, as shown in FIG. 18, solder balls 43 are formed on the lower surface of the lower surface side external connection electrode 42 formed in the through hole 39. Next, as shown in FIG. 19, when the sealing film 45 between the silicon substrates 32 adjacent to each other is cut along the dicing line 73, as shown in FIG. A plurality of semiconductor structures 31 having the external connection electrodes 42 are obtained.

  Referring to FIG. 1, the solder balls 43 of the semiconductor structure 31 are arranged on the connection pads 3 of the circuit board 1, and the solder balls 24 of the optical sensor 11 are placed on the columnar electrodes 44 of the semiconductor structure 31. Then, the solder balls 43 of the semiconductor structure 31 are joined to the connection pads 3 of the circuit board 1 by reflow, and the solder balls 24 of the optical sensor 11 are bonded to the upper surfaces of the columnar electrodes 44 of the semiconductor structure 31. When joined, the imaging device 10 including the optical sensor 11 and the semiconductor structure 31 is mounted on the circuit board 1.

  As described above, the optical sensor 11 having the photoelectric conversion device region 13 on the upper surface is used as a peripheral drive circuit of the optical sensor 11 via the solder ball 24 provided under the external connection electrode 23 provided on the lower surface. Even if the photoelectric conversion device region 13 and the connection pad 14 connected to the photoelectric conversion device region 13 are provided on the upper surface of the optical sensor 11, the bonding wire is mounted. Or it can mount, without using a flexible wiring board, Therefore, mounting of the optical sensor 11 can be performed easily.

  Further, since the semiconductor structure 31 is mounted on the circuit board 1 via the solder balls 43 provided under the lower surface side external connection electrodes 42 provided on the lower surface thereof, a bonding wire or a flexible wiring board is provided. Therefore, the semiconductor structure 31 can be easily mounted.

  The semiconductor structure 31 may be mounted on the circuit board 1, and then the optical sensor 11 may be mounted on the semiconductor structure 31. Alternatively, the optical sensor 11 may be mounted on the semiconductor structure 31, and then, the imaging device 10 including the optical sensor 11 and the semiconductor structure 31 may be mounted on the circuit board 1.

  Moreover, in the said embodiment, as shown in FIG. 19, although the sealing film 45 is cut | disconnected along the dicing line 73 and isolate | separated into each semiconductor structure 31, it is not limited to this. . For example, after the step shown in FIG. 18, as shown in FIG. 20, the solder balls 24 of the separated optical sensor 11 are bonded onto the corresponding columnar electrodes 44, and then sealed as shown in FIG. The film 45 may be cut along the dicing line 73 to be separated into individual semiconductor structures 31.

  In the above embodiment, for example, as shown in FIG. 9, the solder ball 24 is formed on the lower surface of the optical sensor 11, but the solder ball 24 is not formed on the lower surface of the optical sensor 11. In the step shown in FIG. 18, the solder balls 24 may be formed on the columnar electrodes 44 as shown in FIG. Further, for example, a solder layer may be formed on the connection pads 3 of the circuit board 1 without forming the solder balls 43 on the lower surface of the semiconductor structure 31. In addition, one or both of the bonding between the optical sensor 11 and the semiconductor structure 31 and the bonding between the semiconductor structure 31 and the circuit board 1 is not performed by solder balls, but conductive particles in the thermosetting insulating resin. Alternatively, an anisotropic conductive adhesive mixed with or a conductive adhesive may be used.

  The semiconductor structure 31 has been described in the case where the optical sensor 11 is mounted with the main surface on which the integrated circuit 33 is formed facing upward. However, the surface on which the integrated circuit 33 is formed is directed downward. The optical sensor 11 may be mounted in a state. In this case, the upper surface side external connection electrode of the semiconductor structure 31 connected to the external connection electrode 23 of the optical sensor 11 is formed on the wiring extending outward from the peripheral edge of the silicon substrate. The lower surface side external connection electrode of the semiconductor structure 31 connected to the connection pad 3 of the substrate 1 may be formed on the wiring routed inward of the silicon substrate.

  Further, the external connection electrode of the semiconductor structure may be formed only on the upper surface side and not on the lower surface side. In this case, the connection between the external connection electrode of the semiconductor structure and the connection pad of the circuit board may be performed by a flexible wiring board. If it is arranged opposite to the upper surface of the semiconductor structure, both external connection electrodes can be directly joined by solder balls or anisotropic conductive adhesive.

  Moreover, in the said embodiment, as shown in FIG.2 and FIG.10, the adhesive force falls by irradiation of an ultraviolet-ray on the upper surface of the base plates 61 and 71 which consist of a glass plate, a transparent metal plate, a transparent resin plate, etc. of a ultraviolet ray. Although the thing provided with the adhesive layers 62 and 72 to be used is used, it is not limited to this. For example, a copper foil may be used as the base plates 61 and 71, and a die bond material may be used as the adhesive layers 62 and 72, and these may be removed by etching or polishing.

  Furthermore, in the above embodiment, the semiconductor structure 31 has the columnar electrode 44 as the upper surface side external connection electrode. However, the present invention is not limited to this, and the upper surface does not have the columnar electrode 44 and the sealing film 45. A wiring 41 having a connection pad portion as a side external connection electrode may be provided, and an overcoat film covering a portion of the wiring 41 excluding the connection pad portion may be provided.

1 is a cross-sectional view of a mounting structure of an imaging device as an embodiment of the present invention. Sectional drawing of an initial process in the manufacturing method of the optical sensor shown in FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. FIG. 9 is a cross-sectional view of the process following FIG. 8. Sectional drawing of the initial process in the manufacturing method of the semiconductor structure shown in FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. FIG. 15 is a sectional view of a step following FIG. 14. FIG. 16 is a cross-sectional view of the process following FIG. 15. FIG. 17 is a cross-sectional view of the process following FIG. 16. FIG. 18 is a cross-sectional view of the process following FIG. 17. FIG. 19 is a cross-sectional view of the process following FIG. 18. Sectional drawing of the predetermined process shown in order to demonstrate the other example of the manufacturing method of an optical sensor and a semiconductor structure. FIG. 21 is a cross-sectional view of the process following FIG. 20. Sectional drawing of the predetermined process shown in order to demonstrate the further another example of the manufacturing method of an optical sensor and a semiconductor structure.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Circuit board 3 Connection pad 10 Imaging device 11 Optical sensor 12 Silicon substrate 13 Photoelectric conversion device area 14 Connection pad 17 2nd insulating film 22 Wiring 23 External connection electrode 24 Solder ball 31 Semiconductor structure 32 Silicon substrate 33 Integrated circuit 37 Second insulating film 41 Wiring 42 Lower surface side external connection electrode 43 Solder ball 44 Columnar electrode 45 Sealing film 52 Lens

Claims (13)

An optical sensor having a photoelectric conversion device region on an upper surface and an external connection electrode on a lower surface; and a semiconductor structure having an upper surface side external connection electrode on an upper surface, the optical sensor having an external connection Mounted on the semiconductor structure in a state where the electrode for electrical connection is electrically connected to the upper surface side external connection electrode of the semiconductor structure,
The semiconductor structure has a function as a peripheral drive circuit of the photosensor, and covers a semiconductor substrate provided with a connection pad on the upper surface, and an upper surface and a peripheral side surface excluding the connection pad of the semiconductor substrate. An insulating film having a through-hole outside the peripheral side surface of the semiconductor substrate; a wiring provided on the upper surface of the insulating film connected to the connection pad of the semiconductor substrate; and a connection pad portion of the wiring An imaging apparatus comprising: an upper surface side external connection electrode provided on an upper surface; and a lower surface side external connection electrode provided connected to the wiring in the through hole of the insulating film.   In the invention according to claim 1, the optical sensor includes a semiconductor substrate having an upper surface provided with the photoelectric conversion device region and a connection pad connected to the photoelectric conversion device region, and a photoelectric conversion device region of the semiconductor substrate. An insulating film having a through hole outside the peripheral side surface of the semiconductor substrate, and an upper surface of the insulating film connected to a connection pad of the semiconductor substrate. An imaging apparatus comprising: a wiring; and the external connection electrode provided to be connected to the wiring in a through hole of the insulating film.   2. The imaging device according to claim 1, wherein the semiconductor structure includes a columnar electrode provided on an upper surface of a connection pad portion of the wiring as the upper surface side external connection electrode.   2. The imaging device according to claim 1, wherein the external connection electrode of the photosensor and the upper surface side external connection electrode of the semiconductor structure are connected via a solder ball.   2. The imaging apparatus according to claim 1, wherein a solder ball is provided under the external connection electrode on the lower surface side of the semiconductor structure.   2. The imaging apparatus according to claim 1, wherein a lens is disposed above the optical sensor. Arranging a plurality of first semiconductor substrates provided with a photoelectric conversion device region on the upper surface and connection pads connected to the photoelectric conversion device region on the first base plate, and
Forming a first insulating film on the first base plate including the plurality of first semiconductor substrates;
Forming a through hole in the first insulating film outside the peripheral side surface of each first semiconductor substrate;
A wiring is formed on the upper surface of the first insulating film so as to be connected to a connection pad of the first semiconductor substrate, and an external connection electrode is connected to the wiring in a through hole of the first insulating film. Forming the process,
After the first base plate is removed, the first insulating film between the first semiconductor substrates is cut, and the external connection electrode is provided outside the peripheral side surface of the first semiconductor substrate. Obtaining a plurality of sensors;
Arranging a plurality of second semiconductor substrates, each having a connection pad on the upper surface, spaced apart from each other on the second base plate;
Forming a second insulating film on the second base plate including the plurality of second semiconductor substrates;
Forming a through hole in the second insulating film outside the peripheral side surface of each second semiconductor substrate;
A wiring including an upper surface side external connection electrode is formed on the upper surface of the second insulating film connected to the connection pad of the second semiconductor substrate, and the lower surface side is formed in the through hole of the second insulating film. Forming an external connection electrode connected to the wiring;
A sealing film is formed on and around the entire upper surface of the second insulating film including the upper surface side external connection electrode and the wiring, and the upper surface of the sealing film is the upper surface of the upper surface side external connection electrode And the process of making it flush with
After removing the second base plate, the sealing film between the second semiconductor substrates is cut to have the upper surface side external connection electrode on the second insulating film, and Obtaining a plurality of semiconductor structures having the lower surface side external connection electrodes on the outside of the peripheral side surface of the second semiconductor substrate;
Mounting the photosensor on the semiconductor structure by electrically connecting the external connection electrode of the photosensor to the upper surface side external connection electrode of the semiconductor structure;
A method for manufacturing an imaging apparatus, comprising:   8. The method of manufacturing an imaging apparatus according to claim 7, further comprising a step of forming an opening in the first insulating film in a portion corresponding to a photoelectric conversion device region of the first semiconductor substrate. .   8. The method of manufacturing an imaging device according to claim 7, wherein the external connection electrode of the photosensor is connected to the upper surface side external connection electrode of the semiconductor structure via a solder ball.   8. The imaging device according to claim 7, wherein the semiconductor structure includes a columnar electrode provided on an upper surface of a connection pad portion of the wiring as the upper surface side external connection electrode. Production method. An optical sensor having a photoelectric conversion device region on the upper surface, an external connection electrode on the lower surface, and a function as a peripheral drive circuit for the optical sensor, and an upper surface side external connection electrode on the upper surface And an imaging device mounting structure in which an imaging device comprising a semiconductor structure having a lower surface side external connection electrode on a lower surface is mounted on a circuit board having a connection pad on the upper surface. The external connection electrode is mounted on the semiconductor structure in a state in which the external connection electrode is electrically connected to the upper surface side external connection electrode of the semiconductor structure, and the lower surface side external connection electrode is mounted on the semiconductor structure. It is mounted on the circuit board in a state of being electrically connected to the connection pads of the circuit board,
The semiconductor construct is
A semiconductor substrate provided with a connection pad on the upper surface; an insulating film provided so as to cover at least the upper surface and the peripheral side surface excluding the connection pad; and having a through hole outside the peripheral side surface of the semiconductor substrate; and the insulation A wiring provided on the upper surface of the film connected to the connection pad of the semiconductor substrate, an upper surface side external connection electrode provided on the upper surface of the connection pad portion of the wiring, and the wiring in the through hole of the insulating film A mounting structure for an imaging apparatus, comprising: the lower surface side external connection electrode provided to be connected. 12. The mounting structure for an image pickup apparatus according to claim 11, wherein the external connection electrode of the photosensor and the upper surface side external connection electrode of the semiconductor structure are connected via a solder ball. . Mounting structure of an image pickup apparatus in the invention described in claim 11, wherein the lower surface side external connection electrode of the semiconductor structure and the connection pads of the circuit board, characterized in that it is connected via the solder balls.

Images