JP4173964B2 - Electroless copper plating solution and electroless copper plating method using the same - Google Patents
Electroless copper plating solution and electroless copper plating method using the same Download PDFInfo
- Publication number
- JP4173964B2 JP4173964B2 JP2001400775A JP2001400775A JP4173964B2 JP 4173964 B2 JP4173964 B2 JP 4173964B2 JP 2001400775 A JP2001400775 A JP 2001400775A JP 2001400775 A JP2001400775 A JP 2001400775A JP 4173964 B2 JP4173964 B2 JP 4173964B2
- Authority
- JP
- Japan
- Prior art keywords
- copper plating
- electroless copper
- plating solution
- plating
- cooh
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】
【発明の属する技術分野】
本発明は、プリント配線板の製造に使用される無電解銅めっき液、およびこれを用いた無電解銅めっき方法に関する。
【０００２】
【従来の技術】
多層プリント配線板の層間接続には、プリント配線板の全板厚を貫通するスルーホールが一般的に用いられ、層数が多い場合には一部の層間を接続する部分バイアホールが用いられている。このような層間接続は、多層配線板を穴空けした後、無電解銅めっき、電気銅めっきにより穴内の導電化を行い形成されるものであり、その形成方法として最も多く用いられているものは、めっきスルーホール法である。
【０００３】
このめっきスルーホール法に用いられる無電解銅めっき液は、硫酸第二銅などの二価の銅塩、エチレンジアミン四酢酸などの二価銅イオンのアルカリ可溶性錯化剤、ホルムアルデヒドなどの還元剤、および水酸化ナトリウムなどのｐＨ調整剤を主成分としているが、液の安定性が悪いため、安定剤として一般的にシアン化ナトリウム等が添加されていた。
【０００４】
【発明が解決しようとする課題】
しかし、シアン化合物の添加は銅めっきの析出速度が著しく低下し、更に安全衛生上毒物指定されているために作業上危険性が高い等の問題があった。
【０００５】
上記問題を鑑みて、本発明は、作業上安全であり、析出速度及び液安定性に優れた無電解銅めっき液、およびこれを用いた無電解銅めっき方法を提供することを目的とする。
【０００６】
【課題を解決するための手段】
即ち、本発明は、銅塩、銅イオンの錯化剤、ｐＨ調整剤、及び還元剤を含む無電解銅めっき液において、ジスルフィド結合（Ｓ−Ｓ結合）を有する化合物をさらに含む無電解銅めっき液をその特徴としている。また、本発明は、本発明の無電解銅めっき液を用いて銅めっき被膜を形成する無電解銅めっき方法をその特徴としている。
【０００７】
ここで、該ジスルフィド結合を有する化合物は、式（１）
Ｒ−Ｓ−Ｓ−Ｒ’ （１）
（式中、Ｒ、Ｒ’は、それぞれ独立に、−ＣｎＨ２ｎ＋１、−ＣｎＨ２ｎＯＨ、−ＣｎＨ２ｎＣＯＯＨ、−ＣｎＨ２ｎＣ６Ｈ５、−ＣＨ（ＯＨ）ＣｎＨ２ｎ（ＯＨ）、−ＣＨ（ＣＯＯＨ）ＣｎＨ２ｎ（ＣＯＯＨ）、−ＣｎＨ２ｎＣＨ（ＯＨ）ＣｍＨ２ｍ（ＯＨ）、−ＣｎＨ２ｎＣＨ（ＣＯＯＨ）ＣｍＨ２ｍ（ＣＯＯＨ）、−ＣｎＨ２ｎＣＨ（Ｃ６Ｈ５）ＣｍＨ２ｍ＋１であり、ｍおよびｎはそれぞれ独立に１〜６の整数である。）
に示す化合物であることが望ましい。
【０００８】
さらに、無電解銅めっき液中での該ジスルフィド結合を有する化合物の濃度は１〜１００ｍｇ／ｌであることが望ましい。
【０００９】
【発明の実施の形態】
以下、本発明について詳細に説明する。
【００１０】
本発明の無電解銅めっき液に使用される銅塩としては、硫酸銅、酸化銅、水酸化銅などがあり、銅イオンを含むものであれば良く、特に限定されない。また、その濃度は、使用する銅塩によって適宜決定されるが、銅塩として硫酸銅を例に取ると、その配合量は、５ｇ／ｌ〜１５ｇ／ｌであることが好ましい。
【００１１】
本発明の無電解銅めっき液に使用される銅イオンの錯化剤としては、エチレンジアミン四酢酸またはこの塩や酒石酸またはその塩等、銅イオンと錯体を形成するものであれば良く、特に限定されない。また、その濃度は、使用する銅イオンの錯化剤によって適宜決定されるが、銅イオンの錯化剤としてエチレンジアミン四酢酸を例に取ると、その配合量は、１５ｇ／ｌ〜６０ｇ／ｌであることが好ましい。
【００１２】
本発明の無電解銅めっき液に使用される還元剤はホルムアルデヒドやパラホルムアルデヒド等、銅イオンを還元可能なものであれば良く、特に限定されない。また、その濃度は、使用する還元剤によって適宜決定されるが、還元剤として３７％のホルムアルデヒド水溶液を例に取ると、その配合量は、２ｍｌ／ｌ〜２０ｍｌ／ｌであることが好ましい。
【００１３】
本発明の無電解銅めっき液に使用されるｐＨ調整剤は水酸化ナトリウムや水酸化カリウム等のアルカリ金属や水酸化カルシウム等のアルカリ土類金属の水酸化物であれば良く、特に限定されない。ｐＨ調整剤の配合量は、本発明の無電解銅めっき液のｐＨが１１．０〜１３．５の範囲になるように適宜決定、添加される。
【００１４】
また、上記基本成分に加え、本発明の無電解銅めっき液にはジスルフィド結合（Ｓ−Ｓ結合）を有する化合物が含まれ、好ましくは、式（１）
Ｒ−Ｓ−Ｓ−Ｒ’ （１）
（式中、Ｒ、Ｒ’は、それぞれ独立に、−ＣｎＨ２ｎ＋１、−ＣｎＨ２ｎＯＨ、−ＣｎＨ２ｎＣＯＯＨ、−ＣｎＨ２ｎＣ６Ｈ５、−ＣＨ（ＯＨ）ＣｎＨ２ｎ（ＯＨ）、−ＣＨ（ＣＯＯＨ）ＣｎＨ２ｎ（ＣＯＯＨ）、−ＣｎＨ２ｎＣＨ（ＯＨ）ＣｍＨ２ｍ（ＯＨ）、−ＣｎＨ２ｎＣＨ（ＣＯＯＨ）ＣｍＨ２ｍ（ＣＯＯＨ）、−ＣｎＨ２ｎＣＨ（Ｃ６Ｈ５）ＣｍＨ２ｍ＋１であり、ｍおよびｎはそれぞれ独立に１〜６の整数である。）
に示す化合物であり、特に好ましくは、Ｒ、Ｒ’がそれぞれ独立に−ＯＨ基または−ＣＯＯＨ基を含有し、ｍ、ｎがそれぞれ独立に１〜３の整数である式（１）の化合物である。
【００１５】
また、本発明のめっき液中でのジスルフィドを有する化合物の濃度としては、１〜１００ｍｇ／ｌである場合が良好な析出速度及び液安定性を得ることができ、好ましい。さらに好ましくは３〜５０ｍｇ／ｌの範囲であり、特に好ましくは５〜２０ｍｇ／ｌの範囲である。ジスルフィド結合（Ｓ−Ｓ結合）を有する化合物の濃度が１ｍｇ／ｌ未満では液安定性が低く、１００ｍｇ／ｌを超えるとめっき析出速度が低下する。
【００１６】
また、上記の成分の他に、分子内に−Ｎ＝、−Ｎ＝Ｎ−、または−ＮＨ２を含むＮ含有有機化合物もしくはアンモニウムイオンと、分子内にポリオキシエチレン鎖（−（ＣＨ２ＣＨ２Ｏ）ｎ−）を持つ界面活性剤と、をさらに加えてもよく、これにより外観及び内層接続信頼性に優れた無電解銅めっき皮膜を得ることができる。
【００１７】
上記のような成分を含む本発明の無電解銅めっき液を調整する方法、条件としては特に限定されないが、作業のし易さ、安全性等の面から常温、常圧下において、攪拌等を行いながら水と上記成分を混合し、調整することが好ましい。
【００１８】
本発明の無電解銅めっき液を用いて銅めっき被膜を多層プリント配線板の層間接続内壁等の所望の箇所に形成する方法としては、あらかじめ、常法に従って必要な前処理が施され、また、必要に応じて、被銅めっき箇所に、パラジウム、金、白金等の触媒が付与された多層プリント配線板を、液温が２５〜７０℃、好ましくは３５〜５０℃のめっき液に必要な膜厚のめっき被膜が形成されるまで浸漬すればよい。
【００１９】
【実施例】
以下、実施例により本発明をさらに詳しく説明する。
【００２０】
実施例１
試験基板として、表面を滑らかに研磨したステンレススティール板を用いた。めっき前処理として、クリーナーコンディショナであるＣＬＣ−６０１（日立化成工業株式会社製、商品名）に、浸漬処理して表面の清浄化及びコンディショニングをした後、表面のソフトエッチング及び増感処理液であるＨＳ−２０１（日立化成工業株式会社製、商品名）に浸漬し、さらに密着促進処理液であるＡＤＰ−６０１（日立化成工業株式会社製、商品名）で浸漬処理を行った。このような前処理を行った試験基板を、以下の組成の無電解銅めっき液に、以下に示した化合物を加えためっき液を用い、めっき温度４０℃で５分間めっきを行った。
【００２１】
（無電解銅めっき液の組成）
ＣｕＳＯ４・５Ｈ２Ｏ ：１０ｇ／ｌ
ＥＤＴＡ・４Ｎａ ：５０ｇ／ｌ
３７％ＨＣＨＯ ：１２ｍｌ／ｌ
ＮａＯＨ ：５．５ｇ／ｌ
（化合物）
ジチオジグリコール酸 ：１ｍｇ／ｌ
【００２２】
実施例２
実施例１と同じ組成の無電解銅めっき液に、以下に示した化合物を加え、実施例１と同じめっき前処理、めっき条件にてめっきを行った。
（化合物）
ジチオジグリコール酸 ：１０ｍｇ／ｌ
【００２３】
実施例３
実施例１と同じ組成の無電解銅めっき液に、以下に示した化合物を加え、実施例１と同じめっき前処理、めっき条件にてめっきを行った。
（化合物）
ジチオジグリコール酸 ：１００ｍｇ／ｌ
【００２４】
実施例４
実施例１と同じ組成の無電解銅めっき液に、以下に示した化合物を加え、実施例１と同じめっき前処理、めっき条件にてめっきを行った。
（化合物）
２−カルボキシプロピルジスルフィド ：１０ｍｇ／ｌ
【００２５】
実施例５
実施例１と同じ組成の無電解銅めっき液に、以下に示した化合物を加え、実施例１と同じめっき前処理、めっき条件にてめっきを行った。
（化合物）
２−ヒドロキシエチルジスルフィド ：１０ｍｇ／ｌ
【００２６】
比較例１
実施例１と同じ組成の無電解銅めっき液に、以下に示した化合物を加え、実施例１と同じめっき前処理、めっき条件にてめっきを行った。
（化合物）
ジチオジグリコール酸 ：０．１ｍｇ／ｌ
【００２７】
比較例２
実施例１と同じ組成の無電解銅めっき液に、以下に示した化合物を加え、実施例１と同じめっき前処理、めっき条件にてめっきを行った。
（化合物）
ジチオジグリコール酸 ：３００ｍｇ／ｌ
【００２８】
比較例３
実施例１と同じ組成の無電解銅めっき液に、以下に示した化合物を加え、実施例１と同じめっき前処理、めっき条件にてめっきを行った。
（化合物）
シアン化ナトリウム ：１０ｍｇ／ｌ
【００２９】
比較例４
実施例１と同じ組成の無電解銅めっき液に、以下に示した化合物を加え、実施例１と同じめっき前処理、めっき条件にてめっきを行った。
（化合物）
シアン化カリウム ：１０ｍｇ／ｌ
【００３０】
上記のような条件により作成された実施例１〜５および比較例１〜４の各試験基板における銅めっき被膜の析出速度、および上記各組成での無電解銅めっき液の液安定性、さらに、各無電解銅めっき液の安全性について以下のような方法により評価した。これらの結果を表１に示す。
【００３１】
（析出速度）：各試験板について、無電解銅めっき前後の重量差を算出し、析出速度とした。
(液安定性)：亜酸化銅(Cu2O)を各めっき液に１０mg/lとなるように添加し、試験基板を５時間めっきした後、ビーカーの底の銅ふり発生の有無を観察した。銅ふり発生の無いものを○、有るものは液安定性が低いものとして×と評価した。この結果を表1に示す。
（安全性）：安全衛生上毒物指定されているために、作業上危険性が高い化合物を含むものを×、含まないものを○として評価した。
【００３２】
【表１】
表１から明らかなように、実施例１〜５の無電解銅めっき液は、作業上安全であり、析出速度及び液安定性にも優れている。
【００３４】
【発明の効果】
したがって、本発明により、作業上安全であり析出速度及び液安定性に優れた無電解銅めっき液を提供することができる。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electroless copper plating solution used for manufacturing a printed wiring board and an electroless copper plating method using the same.
[0002]
[Prior art]
For interlayer connection of multilayer printed wiring boards, through holes that penetrate the entire thickness of the printed wiring board are generally used, and when there are many layers, partial via holes that connect some layers are used. Yes. Such an interlayer connection is formed by making a hole in a multilayer wiring board and then conducting the inside of the hole by electroless copper plating or electrolytic copper plating. The plating through hole method.
[0003]
The electroless copper plating solution used in this plating through-hole method includes divalent copper salts such as cupric sulfate, alkali-soluble complexing agents of divalent copper ions such as ethylenediaminetetraacetic acid, reducing agents such as formaldehyde, and the like. Although the main component is a pH adjusting agent such as sodium hydroxide, sodium cyanide or the like has generally been added as a stabilizer due to poor liquid stability.
[0004]
[Problems to be solved by the invention]
However, the addition of a cyanide compound has a problem that the deposition rate of copper plating is remarkably reduced, and further, because it is designated as a toxic substance for safety and health, it is highly dangerous for work.
[0005]
In view of the above problems, an object of the present invention is to provide an electroless copper plating solution that is safe in operation and excellent in deposition rate and liquid stability, and an electroless copper plating method using the same.
[0006]
[Means for Solving the Problems]
That is, the present invention relates to an electroless copper plating solution further comprising a compound having a disulfide bond (SS bond) in an electroless copper plating solution containing a copper salt, a copper ion complexing agent, a pH adjusting agent, and a reducing agent. Its characteristic is liquid. The present invention also features an electroless copper plating method for forming a copper plating film using the electroless copper plating solution of the present invention.
[0007]
Here, the compound having a disulfide bond has the formula (1)
RSSR '(1)
(In the formula, R and R ′ each independently represent —C n H 2n + 1 , —C n H 2n OH, —C n H 2n COOH, —C n H 2n C 6 H 5 , —CH (OH) C n H 2n (OH), - CH (COOH) C n H 2n (COOH), - C n H 2n CH (OH) C m H 2m (OH), - C n H 2n CH (COOH) C m H 2m (COOH), - a C n H 2n CH (C 6 H 5) C m H 2m + 1, m and n are each independently 1 to 6 integer).
It is desirable that the compound is
[0008]
Furthermore, the concentration of the compound having a disulfide bond in the electroless copper plating solution is desirably 1 to 100 mg / l.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail.
[0010]
Examples of the copper salt used in the electroless copper plating solution of the present invention include copper sulfate, copper oxide, and copper hydroxide, and any copper salt may be used as long as it contains copper ions. Moreover, although the density | concentration is suitably determined with the copper salt to be used, when copper sulfate is taken as an example as a copper salt, it is preferable that the compounding quantity is 5 g / l-15 g / l.
[0011]
The copper ion complexing agent used in the electroless copper plating solution of the present invention is not particularly limited as long as it forms a complex with copper ions, such as ethylenediaminetetraacetic acid or a salt thereof, tartaric acid or a salt thereof. . The concentration is appropriately determined according to the copper ion complexing agent to be used. When ethylenediaminetetraacetic acid is taken as an example of the copper ion complexing agent, the blending amount is 15 g / l to 60 g / l. Preferably there is.
[0012]
The reducing agent used in the electroless copper plating solution of the present invention is not particularly limited as long as it can reduce copper ions, such as formaldehyde and paraformaldehyde. The concentration is appropriately determined depending on the reducing agent to be used. When a 37% formaldehyde aqueous solution is taken as an example of the reducing agent, the blending amount is preferably 2 ml / l to 20 ml / l.
[0013]
The pH adjuster used in the electroless copper plating solution of the present invention is not particularly limited as long as it is a hydroxide of an alkali metal such as sodium hydroxide or potassium hydroxide or an alkaline earth metal such as calcium hydroxide. The blending amount of the pH adjuster is appropriately determined and added so that the pH of the electroless copper plating solution of the present invention is in the range of 11.0 to 13.5.
[0014]
In addition to the above basic components, the electroless copper plating solution of the present invention contains a compound having a disulfide bond (SS bond).
RSSR '(1)
(In the formula, R and R ′ each independently represent —C n H 2n + 1 , —C n H 2n OH, —C n H 2n COOH, —C n H 2n C 6 H 5 , —CH (OH) C n H 2n (OH), - CH (COOH) C n H 2n (COOH), - C n H 2n CH (OH) C m H 2m (OH), - C n H 2n CH (COOH) C m H 2m (COOH), - a C n H 2n CH (C 6 H 5) C m H 2m + 1, m and n are each independently 1 to 6 integer).
Particularly preferred are compounds of formula (1) wherein R and R ′ each independently contain an —OH group or —COOH group, and m and n are each independently an integer of 1 to 3. is there.
[0015]
Moreover, as a density | concentration of the compound which has disulfide in the plating solution of this invention, the case where it is 1-100 mg / l can obtain a favorable precipitation rate and liquid stability is preferable. More preferably, it is the range of 3-50 mg / l, Most preferably, it is the range of 5-20 mg / l. When the concentration of the compound having a disulfide bond (SS bond) is less than 1 mg / l, the liquid stability is low, and when it exceeds 100 mg / l, the plating deposition rate is lowered.
[0016]
In addition to the above components, an N-containing organic compound or ammonium ion containing -N =, -N = N-, or -NH 2 in the molecule, and a polyoxyethylene chain (-(CH 2 CH 2 O) a surfactant having n- ) may be further added, whereby an electroless copper plating film excellent in appearance and inner layer connection reliability can be obtained.
[0017]
The method and conditions for preparing the electroless copper plating solution of the present invention containing the above components are not particularly limited, but stirring is performed at normal temperature and normal pressure from the viewpoint of ease of work, safety, etc. However, it is preferable to adjust by mixing water and the above components.
[0018]
As a method of forming a copper plating film on a desired location such as an interlayer connection inner wall of a multilayer printed wiring board using the electroless copper plating solution of the present invention, a pretreatment necessary according to a conventional method is performed in advance. If necessary, a multilayer printed wiring board in which a catalyst such as palladium, gold, platinum or the like is applied to a copper plated portion is a film necessary for a plating solution having a liquid temperature of 25 to 70 ° C., preferably 35 to 50 ° C. What is necessary is just to immerse until a thick plating film is formed.
[0019]
【Example】
Hereinafter, the present invention will be described in more detail with reference to examples.
[0020]
Example 1
A stainless steel plate whose surface was polished smoothly was used as a test substrate. As a pre-plating treatment, the cleaner conditioner CLC-601 (trade name, manufactured by Hitachi Chemical Co., Ltd.) is dipped to clean and condition the surface, and then the surface is soft-etched and sensitized with a sensitizing solution. It was immersed in a certain HS-201 (manufactured by Hitachi Chemical Co., Ltd., trade name), and further immersed in ADP-601 (trade name, manufactured by Hitachi Chemical Co., Ltd.) which is an adhesion promoting treatment solution. The test substrate subjected to such pretreatment was plated at a plating temperature of 40 ° C. for 5 minutes using a plating solution obtained by adding the following compound to an electroless copper plating solution having the following composition.
[0021]
(Composition of electroless copper plating solution)
CuSO 4 · 5H 2 O: 10g / l
EDTA · 4Na: 50 g / l
37% HCHO: 12 ml / l
NaOH: 5.5 g / l
(Compound)
Dithiodiglycolic acid: 1 mg / l
[0022]
Example 2
The following compounds were added to the electroless copper plating solution having the same composition as in Example 1, and plating was performed under the same plating pretreatment and plating conditions as in Example 1.
(Compound)
Dithiodiglycolic acid: 10 mg / l
[0023]
Example 3
The following compounds were added to the electroless copper plating solution having the same composition as in Example 1, and plating was performed under the same plating pretreatment and plating conditions as in Example 1.
(Compound)
Dithiodiglycolic acid: 100 mg / l
[0024]
Example 4
The following compounds were added to the electroless copper plating solution having the same composition as in Example 1, and plating was performed under the same plating pretreatment and plating conditions as in Example 1.
(Compound)
2-carboxypropyl disulfide: 10 mg / l
[0025]
Example 5
The following compounds were added to the electroless copper plating solution having the same composition as in Example 1, and plating was performed under the same plating pretreatment and plating conditions as in Example 1.
(Compound)
2-hydroxyethyl disulfide: 10 mg / l
[0026]
Comparative Example 1
The following compounds were added to the electroless copper plating solution having the same composition as in Example 1, and plating was performed under the same plating pretreatment and plating conditions as in Example 1.
(Compound)
Dithiodiglycolic acid: 0.1 mg / l
[0027]
Comparative Example 2
The following compounds were added to the electroless copper plating solution having the same composition as in Example 1, and plating was performed under the same plating pretreatment and plating conditions as in Example 1.
(Compound)
Dithiodiglycolic acid: 300 mg / l
[0028]
Comparative Example 3
The following compounds were added to the electroless copper plating solution having the same composition as in Example 1, and plating was performed under the same plating pretreatment and plating conditions as in Example 1.
(Compound)
Sodium cyanide: 10 mg / l
[0029]
Comparative Example 4
The following compounds were added to the electroless copper plating solution having the same composition as in Example 1, and plating was performed under the same plating pretreatment and plating conditions as in Example 1.
(Compound)
Potassium cyanide: 10 mg / l
[0030]
The deposition rate of the copper plating film on each test substrate of Examples 1 to 5 and Comparative Examples 1 to 4 prepared under the above conditions, and the liquid stability of the electroless copper plating solution in each of the above compositions, The safety of each electroless copper plating solution was evaluated by the following method. These results are shown in Table 1.
[0031]
(Deposition rate): About each test plate, the weight difference before and behind electroless copper plating was computed, and it was set as the precipitation rate.
(Liquid stability): Cuprous oxide (Cu 2 O) was added to each plating solution so as to be 10 mg / l, and the test substrate was plated for 5 hours, and then the presence or absence of copper sprinkling at the bottom of the beaker was observed. . The case where no copper shake was generated was evaluated as ◯, and the case where there was no copper shake was evaluated as × because the liquid stability was low. The results are shown in Table 1.
(Safety): Since it was designated as a toxic substance in terms of safety and health, it was evaluated as “X” when it contained a compound with high work risk, and “◯” when it did not contain it.
[0032]
[Table 1]
As is clear from Table 1, the electroless copper plating solutions of Examples 1 to 5 are safe in terms of work, and are excellent in deposition rate and liquid stability.
[0034]
【The invention's effect】
Therefore, according to the present invention, it is possible to provide an electroless copper plating solution that is safe in operation and excellent in deposition rate and liquid stability.
Claims (3)
Ｒ−Ｓ−Ｓ−Ｒ’ （１）
（式中、Ｒ、Ｒ’は、それぞれ独立に、−ＣｎＨ２ｎ＋１、−ＣｎＨ２ｎＯＨ、−ＣｎＨ２ｎＣＯＯＨ、−ＣｎＨ２ｎＣ６Ｈ５、−ＣＨ（ＯＨ）ＣｎＨ２ｎ（ＯＨ）、−ＣＨ（ＣＯＯＨ）ＣｎＨ２ｎ（ＣＯＯＨ）、−ＣｎＨ２ｎＣＨ（ＯＨ）ＣｍＨ２ｍ（ＯＨ）、−ＣｎＨ２ｎＣＨ（ＣＯＯＨ）ＣｍＨ２ｍ（ＣＯＯＨ）、−ＣｎＨ２ｎＣＨ（Ｃ６Ｈ５）ＣｍＨ２ｍ＋１であり、ｍおよびｎはそれぞれ独立に１〜６の整数である。）
に示す化合物であることを特徴とする請求項１記載の無電解銅めっき液。The compound having a disulfide bond is represented by the formula (1)
RSSR '(1)
(In the formula, R and R ′ each independently represent —C n H 2n + 1 , —C n H 2n OH, —C n H 2n COOH, —C n H 2n C 6 H 5 , —CH (OH) C n H 2n (OH), - CH (COOH) C n H 2n (COOH), - C n H 2n CH (OH) C m H 2m (OH), - C n H 2n CH (COOH) C m H 2m (COOH), - a C n H 2n CH (C 6 H 5) C m H 2m + 1, m and n are each independently 1 to 6 integer).
The electroless copper plating solution according to claim 1, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001400775A JP4173964B2 (en) | 2001-12-28 | 2001-12-28 | Electroless copper plating solution and electroless copper plating method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001400775A JP4173964B2 (en) | 2001-12-28 | 2001-12-28 | Electroless copper plating solution and electroless copper plating method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003193248A JP2003193248A (en) | 2003-07-09 |
| JP4173964B2 true JP4173964B2 (en) | 2008-10-29 |
Family
ID=27605166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001400775A Expired - Fee Related JP4173964B2 (en) | 2001-12-28 | 2001-12-28 | Electroless copper plating solution and electroless copper plating method using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4173964B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI713737B (en) * | 2016-05-04 | 2020-12-21 | 德商德國艾托特克公司 | Process for depositing a metal or metal alloy on a surface of a substrate including its activation |
-
2001
- 2001-12-28 JP JP2001400775A patent/JP4173964B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003193248A (en) | 2003-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI391523B (en) | Electroless gold plating bath, electroless gold plating method and electronic parts | |
| KR101488885B1 (en) | Method for maintaining plating capacity in electroless gold plating bath | |
| KR101393478B1 (en) | Electroless gold plating bath, electroless gold plating method and electronic parts | |
| US8801844B2 (en) | Autocatalytic plating bath composition for deposition of tin and tin alloys | |
| JP2007009305A (en) | Electroless palladium plating liquid, and three layer-plated film terminal formed using the same | |
| JP3994279B2 (en) | Electroless gold plating solution | |
| JP4173964B2 (en) | Electroless copper plating solution and electroless copper plating method using the same | |
| JP6719437B2 (en) | Electroless nickel plating bath | |
| TWI804539B (en) | Electroless gold plating bath | |
| JPH05148662A (en) | Copper electroless plating solution | |
| JP4599599B2 (en) | Electroless gold plating solution | |
| JP3565302B2 (en) | Electroless gold plating method | |
| JP2005256072A (en) | Gold complex | |
| WO2020239908A1 (en) | Tin plating bath and a method for depositing tin or tin alloy onto a surface of a substrate | |
| JP3292419B2 (en) | Electroless copper plating solution | |
| EP3705601B1 (en) | Electroless gold plating bath | |
| JP2003193249A (en) | Electroless copper plating solution and electroless copper plating method using the same | |
| SU1595940A1 (en) | Solution for chemical deposition of nickel-boron coatings | |
| JPS6259180B2 (en) | ||
| JPS5933666B2 (en) | chemical copper plating liquid | |
| JP2003129252A (en) | Electroless plating liquid, electroless plating method, and production method for circuit board | |
| JPS61153281A (en) | Chemical copper plating solution | |
| JPH05156459A (en) | Electroless copper plating solution | |
| JPH07109578A (en) | Electroless copper plating solution | |
| JPS5817255B2 (en) | Electroless copper plating bath |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040817 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20051114 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20051122 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20060509 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060707 |
|
| A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20060724 |
|
| A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20060901 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080815 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110822 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110822 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120822 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120822 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130822 Year of fee payment: 5 |
|
| LAPS | Cancellation because of no payment of annual fees |