JP4160053B2 - Method for manufacturing light emitting device and method for preventing deterioration of light emitting device - Google Patents

Description

The present invention relates to a light emitting device using a light emitter or a light emitting element and a manufacturing method thereof. In particular, the present invention relates to a light-emitting device formed using an organic compound for a light-emitting body or a light-emitting element, and a manufacturing method thereof. Note that the light emission referred to in this specification includes fluorescence and phosphorescence, and the present invention includes light emission from either one or both.

A display device using liquid crystal has a structure in which a backlight is used as a representative form and an image is displayed by the light. Liquid crystal display devices have been adopted as video display means in various electronic devices, but have structural disadvantages such as a narrow viewing angle. On the other hand, a display device using a light emitter in a pixel portion has attracted attention as a next-generation display device because it has a wide viewing angle and excellent visibility.

The structure of a light emitting device using an organic compound as a light emitter (hereinafter referred to as an organic light emitting device) is a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport formed of an organic compound between a cathode and an anode. The structure is a proper combination of a layer, an electron injection layer, and the like. Here, the hole injection layer and the hole transport layer are distinguished from each other, but these are the same in the sense that the hole transport property (hole mobility) is a particularly important characteristic. Here, for convenience, the hole injection layer is a layer on the side in contact with the anode, and the layer on the side in contact with the light-emitting layer is referred to as a hole transport layer for distinction. The layer in contact with the cathode is called an electron injection layer, and the layer in contact with the light emitting layer is called an electron transport layer. The light emitting layer may also serve as an electron transport layer, and is also referred to as a light emitting electron transport layer. A light-emitting element formed by combining these layers exhibits rectification characteristics and is considered to be similar to a diode. In the present specification, these are collectively referred to as an organic compound layer.

As organic compounds for forming an organic light emitting device, both low molecular organic compounds and high molecular organic compounds are known. An example of the low molecular weight organic compound is 4,4-bis- [N- (naphthyl) -N-phenyl-amino] biphenyl (hereinafter referred to as α) which is a copper phthalocyanine (CuPc) aromatic amine material as a hole injection layer. -NPD), 4,4 ', 4 "-tris (N-3-methylphenyl-N-phenyl-amino) triphenylamine (hereinafter referred to as MTDATA), and tris-8-quinolino as the light emitting layer. Latoaluminum complex (Alq ₃ ), etc. Known polymer organic light emitting materials include polyaniline and polythiophene derivative polyethylenedioxythiophene (PEDOT).

From the viewpoint of the diversity of materials, it is said that low molecular weight organic compounds produced by vapor deposition have a great variety compared to high molecular weight organic materials. However, in any case, organic compounds that are purely composed only of basic structural units are rare, and different types of bonds and impurities are mixed in during the production process, and various additives such as pigments may be added. . These materials include materials that deteriorate due to moisture and materials that are easily oxidized. Moisture, oxygen, etc. can be easily mixed from the atmosphere, and handling is necessary.

The light emission mechanism is such that electrons injected from the cathode and holes injected from the anode recombine in the light-emitting layer made of a phosphor to form molecular excitons, and light is emitted when the molecular excitons return to the ground state. It is considered as a phenomenon that releases. The excited state includes light emission from a singlet state (fluorescence) and light emission from a triplet state (phosphorescence). Since the luminance ranges from several thousand to several tens of thousands of cd / m ² , it is considered that it can be applied to a display device in principle.

On the other hand, various deterioration phenomena exist in the organic light emitting device, and are regarded as problems. In particular, when the organic light emitting device is driven for a long time, there is a deterioration phenomenon that the light emission intensity decreases with time. Although this deterioration phenomenon depends on driving conditions such as the voltage applied to the organic light emitting device, the time (half-life) until the light emission intensity is halved to the initial value is 500 to 5000 hours at the most, so that it can be put into practical use. It is a big hindrance.

As one of the causes of the deterioration of the organic light emitting device, it is known that the deterioration proceeds only by being exposed to the air. One of the causes is considered to be because the alkali metal material forming the cathode reacts with moisture or oxygen. Therefore, not only is the organic light emitting device sealed in a sealed space, but also a countermeasure is taken to prevent deterioration as much as possible by putting a desiccant in the sealed space.

However, even if such a sealing structure is used, the current situation is that deterioration of the organic light emitting device cannot be completely prevented. In view of such a situation, it can be estimated that the deterioration of the organic light emitting element proceeds even with a very small amount of moisture and oxygen. It can also be considered that some other factor is inherent.

Since the highest occupied level (HOMO) of the molecular orbital is degenerate, the oxygen molecule is a unique molecule in the ground state and in the triplet state. Usually, the triplet to singlet excitation process is forbidden because it is a forbidden transition (spin forbidden), so that no singlet oxygen molecules are generated. However, if there is a triplet excited state molecule ( ³ M *) in an energy state higher than the singlet state around the oxygen molecule, the following energy transfer occurs, so that the singlet state oxygen molecule becomes The reaction that occurs can be guided.

(Formula 1)

It is said that 75% of the excited state of molecules in the light emitting layer of the organic light emitting device is a triplet state. Therefore, when oxygen molecules are mixed in the organic light emitting device, singlet oxygen molecules can be generated by the energy transfer of Formula 1. Since oxygen molecules in a singlet excited state have an ionic property (charge is biased), there is a possibility of reacting with the charge bias generated in the organic compound.

For example, in bathocuproine (hereinafter referred to as BCP), the methyl group is electron donating, and therefore the carbon directly bonded to the conjugated ring is positively charged. As shown in the following chemical formula 1, there is a possibility that a singlet oxygen having ionic properties reacts with a positively charged carbon molecule to form a carboxylic acid and hydrogen as shown in the chemical formula 2 below. As a result, it is expected that the electron transport property is lowered.

Of course, such a change in the bonding state is an example of a consideration that simplifies the phenomenon, but it is understood that impurities such as oxygen and moisture contained in the organic compound are impurities that cause various deteriorations such as a decrease in luminance. Can be explained.

An application example using an organic light emitting element is an active matrix driving type light emitting device in which a pixel portion is formed by the organic light emitting element. An active matrix driving type light emitting device in which a pixel portion is formed by combining an organic light emitting element and a thin film transistor (hereinafter referred to as TFT) is a semiconductor material containing silicon as a main component, an inorganic insulating material containing silicon as a component, and polyimide It is completed by properly combining organic insulating materials such as acrylic and acrylic. Since the external quantum efficiency of the organic light emitting device is still less than 50%, most of the injected carriers are converted into heat and heat the light emitting device. As a result, thermal stress is applied to the pixel portion, and thermal stress acts on each layer forming the pixel portion. If the force is large, cracks (cracks) are generated.

A light-emitting device using an organic light-emitting element formed by combining an insulator, a semiconductor, a conductor, an organic compound, or the like cannot ignore the internal stress of each film and the interaction due to the thermal stress generated by heat generation. The present invention is a technique for solving such a problem, and provides a means for solving each of the causes of deterioration of an organic light emitting device from two aspects of an impurity factor and a structural factor. An object of the present invention is to provide a highly reliable light emitting device by suppressing deterioration of an organic light emitting element.

In order to prevent deterioration of the light emitting device, the present invention reduces the concentration of moisture and oxygen remaining in the space where the organic light emitting element is sealed as much as possible. At the same time, impurities including oxygen such as moisture and oxygen contained in the organic compound forming the organic light emitting element are simultaneously reduced. Furthermore, the element structure which prevents the deterioration of the organic light emitting element due to stress is adopted to suppress the deterioration.

FIG. 1 is a flowchart illustrating a method for manufacturing a light-emitting device of the present invention. FIG. 1A shows a typical example in which a first conductive film is formed over an insulating film, and a first electrode serving as one electrode of an organic light-emitting element is formed. Thereafter, the insulating film is etched to form contact holes. This contact hole is formed in order to electrically connect one electrode of the organic light emitting device to the active element in the case of active matrix driving. Therefore, the present invention is not applied to the case where a passive matrix driving light emitting device is manufactured.

Then, a second conductive film is formed. Then, a second electrode in contact with the first electrode is formed. In the case of an active matrix driving light emitting device, the first and second wirings are formed using the second conductive film.

An insulating film is formed on the second electrode and the first and second wirings so that the end portion is located outside. This is not limited to an insulating film, and may be a conductive film or a semiconductor film. This insulating film is on the second electrode and the first and second wirings to form a so-called ridge. Then, it is used as a mask when the organic compound layer and the third electrode are provided in the subsequent steps.

A vapor deposition method is employed as a typical method for producing the organic compound layer. In a vapor deposition apparatus for forming an organic compound layer, the wall surface in the reaction chamber is mirror-polished by electrolytic polishing to reduce the amount of gas released. The reaction chamber is made of stainless steel or aluminum. For the purpose of preventing gas emission from the inner wall, a baking process is performed by providing a heater outside the reaction chamber. Although the gas emission can be considerably reduced by the baking treatment, it is preferable to cool with a refrigerant. The exhaust system uses a turbo molecular pump and a dry pump to prevent contamination with oil vapor. Further, a cryopump may be provided in order to remove residual moisture.

The evaporation source is basically a resistance heating type, but a Knudsen cell may be used. The material for vapor deposition is carried in from a load lock type exchange chamber attached to the reaction chamber. In this way, the reaction chamber is prevented from being opened to the atmosphere as much as possible when the vapor deposition material is attached. The evaporation source is mainly an organic material, but sublimation purification is performed in the reaction chamber before vapor deposition. In addition, a zone purification method may be applied.

There is no particular limitation on the structure of the organic compound layer. A hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and the like are appropriately combined. Similarly, the third electrode is formed by vapor deposition. After the organic compound layer is formed, heat treatment may be performed at a pressure of 1 × 10 ⁻⁴ Pa or less so as to release moisture mixed in the vapor deposition.

An organic light-emitting element can be formed by forming the first electrode with an anode and the third electrode with a material applied as a cathode. Alternatively, the first electrode can be a cathode and the third electrode can be an anode. As a material for forming the anode, a transparent conductive material is used, and an indium / tin compound, zinc oxide, or the like can be used. As the material for the cathode, a material containing magnesium (Mg), lithium (Li), or calcium (Ca) having a small work function is used. An electrode made of MgAg (a material in which Mg and Ag are mixed at Mg: Ag = 10: 1) is preferably used. Other examples include ytterbium (Yb), MgAgAl electrode, LiAl electrode, and LiFAl electrode.

Thereafter, a seal pattern is formed using an ultraviolet curable resin or the like, and a sealing substrate is attached. Thus, the organic light emitting element is held in the sealed space. Such a sealing step is performed in an inert gas atmosphere such as highly purified dry nitrogen, helium, argon, krypton, or neon. As a result, the sealed space is filled with the gas, and the concentration of moisture, oxygen, etc. in the space can be sufficiently reduced.

However, even if such measures are taken, moisture and oxygen in the sealed space cannot be completely eliminated. For example, degassing from the organic compound layer, its periphery, and the wall surface of the sealing material may increase the moisture and oxygen concentration in the sealed space even after sealing. As a result, deterioration of the organic light emitting device cannot be prevented no matter how complete the sealing is.

Therefore, in the present invention, after sealing, a temperature cycle of heating and cooling is performed to promote degassing and to perform a process of adsorbing the gas to a desiccant provided in the sealed space. Heating is performed to promote degassing. Barium oxide (BaO) is used as the desiccant. Since the reaction between BaO and moisture is an exothermic reaction as shown in the following formula, the reaction is promoted when the temperature is lowered and cooled. Therefore, heating and cooling or a temperature cycle of cooling and heating is repeated to further reduce moisture and oxygen concentration in the sealed space.

(Formula 2)

Thereafter, an energization test is performed to age the organic light emitting element. This energization test has two meanings. One is to stabilize the organic light emitting device and to detect an initial failure. Another purpose is degassing. When the organic light emitting device emits light with a luminance of 1000 Cd / cm ² , when converted into photons, this corresponds to an emission amount of 10 ¹⁶ / sec · cm ² . Assuming that the quantum efficiency of the organic light emitting device is 1%, the required current density is required to be 100 mA / cm ² . Joule heat is generated by the current flowing at this time, and the organic light emitting element is heated to generate heat. With this heat generation, impurities contained in the organic compound layer, particularly moisture, may be released. In order to effectively adsorb the moisture to the desiccant, the temperature cycle may be repeated.

FIG. 2 is a diagram for explaining the transition of the temperature change of the organic light emitting device in such a manufacturing method. The organic compound layer is formed at room temperature (the temperature increase due to vapor deposition is ignored here). Thereafter, heat treatment is performed at a temperature at which the organic compound layer does not change, and dehydration or deoxygenation is performed. Third electrode formation, seal pattern formation, and sealing plate pasting are also performed at room temperature. Subsequent temperature cycles involve heating and cooling. The heating temperature is the maximum temperature at which the organic compound layer does not deteriorate, but it is heated at 60 ° C. or higher, preferably 80 ° C. or higher because heating is performed including the sealing plate for the purpose of dehydration. The cooling is performed to promote the reaction of BaO, and it is desirable to cool to 0 ° C. or less, preferably to less than −100 ° C. The order of heating and cooling may be reversed, and it is desirable to repeat a plurality of times. Thus, the dew point in the sealed space is set to −50 ° C. or lower, preferably −80 ° C. or lower. One purpose of the energization test is to heat the organic light-emitting element while emitting light, and to actively perform dehydration treatment here.

By such treatment, the reliability of the light emitting device using the organic light emitting element can be improved. As shown in FIG. 1B, the insulating film formation to the third electrode formation are similarly performed, and then a diamond-like carbon (DLC) film having a high gas barrier property is formed to cover the organic light emitting element. May be. The DLC film has an SP ³ bond as a bond between carbons in a short-range order, but has a macroscopic amorphous structure. The composition of the DLC film is 95 to 70 atomic% for carbon and 0.1 to 30 atomic% for hydrogen, and is very hard and excellent in insulation. Such a DLC film is also characterized by low gas permeability such as water vapor and oxygen. It is also known to have a hardness of 15 to 25 GPa as measured by a microhardness meter. As a result, moisture can be prevented from entering from the outside, and deterioration can be suppressed. Therefore, the subsequent temperature cycle process is not performed.

1C, the process from the formation of the insulating film to the pasting of the sealing substrate is performed in the same manner as in FIG. 1A, but no heat treatment is performed during this process. Thereafter, a temperature cycle process and an energization test are performed. The process shown here is an example, and the present invention is not limited to the process shown here. The present invention is characterized in that the dew point of the gas in the sealed space sealed by the heat treatment of the organic compound layer or the temperature cycle treatment of the organic light emitting device is lowered, and the reliability of the organic light emitting device is improved. ing.

The structure of the organic light emitting device manufactured according to the present invention is formed on the first electrode on the first insulating film, the second electrode in contact with the first electrode, and the second electrode. A second insulating film; an organic compound layer on the first electrode; and a third electrode on the organic compound layer, wherein an end of the second insulating film is formed on the second electrode. It is provided outside the end portion and is formed at a position where it does not overlap with the end portion of the organic compound layer.

In another configuration, the first electrode on the first insulating film, the second electrode in contact with the end portion of the first electrode, and the second electrode are provided on the second electrode. A second insulating film having an end located outside the electrode, an organic compound layer on the first electrode, and a third electrode on the organic compound layer, and an end of the organic compound layer The portion is formed at a position that does not overlap the end portion of the second insulating film.

As another configuration, a first electrode provided between the first wiring and the second wiring, a second electrode connected to the first electrode, and the first electrode An organic compound layer and a third electrode on the organic compound layer, and the organic compound layer and the third electrode are provided inside the first wiring and the second wiring. It is what.

As another configuration, the first wiring formed on the first insulating film, the second insulating film provided on the first wiring, the second wiring, and the second wiring A third insulating film provided on the first electrode; a first electrode provided between the first wiring and the second wiring; a first electrode connected to the first wiring; An organic compound layer on the first electrode, and a third electrode on the organic compound layer, and an end of the second insulating film is provided outside the first wiring, 3 is provided outside the second wiring, and the organic compound layer and the third electrode are provided inside the first wiring and the second wiring. Is.

As another structure, in a light-emitting device in which a pixel portion is formed over a first insulating film, the first electrode provided between the first wiring and the second wiring, and the first electrode A first organic compound layer provided on the electrode; a second electrode provided on the first organic compound layer; and a second electrode provided between the second wiring and the third wiring. 3 electrode, a second organic compound layer provided on the third electrode, and a fourth electrode provided on the second organic compound layer, and the second electrode The fourth electrode is connected at the outer edge of the pixel portion.

As another structure, in a light-emitting device in which a pixel portion is formed over a first insulating film, the first electrode provided between the first wiring and the second wiring, and the first electrode A first organic compound layer provided on the electrode; a second electrode provided on the first organic compound layer; and a side portion of the wiring on the first wiring and the second wiring. A first insulating film and a second insulating film protruding from the end portions, respectively, and a third electrode provided between the second wiring and the third wiring; A second organic compound layer provided on the electrode; a fourth electrode provided on the second organic compound layer; and a side portion of the wiring on the third wiring and the fourth wiring. A third insulating film and a fourth insulating film, each having a protruding end, are provided, and the first organic compound layer is formed of the first insulating film and the second insulating film. It provided so as not to overlap an end portion, wherein the second electrode and the fourth electrode has a structure which is connected at the outer edge portion of the pixel portion.

As another configuration, in the light-emitting device in which the pixel portion is formed over the first insulating film, the pixel portion includes a first electrode provided between the first wiring and the second wiring. A first organic compound layer provided on the first electrode, a second electrode provided on the first organic compound layer, and between the second wiring and the third wiring. A third electrode provided on the second electrode, a second organic compound layer provided on the third electrode, and a fourth electrode provided on the second organic compound layer, and Provided in a sealed space formed by a sealing material, the concentration of oxygen and moisture in the sealed space is 2 ppm or less.

As another configuration, in the light-emitting device in which the pixel portion is formed over the first insulating film, the pixel portion includes a first electrode provided between the first wiring and the second wiring. A first organic compound layer provided on the first electrode, a second electrode provided on the first organic compound layer, and between the second wiring and the third wiring. A third electrode provided on the second electrode, a second organic compound layer provided on the third electrode, and a fourth electrode provided on the second organic compound layer, and Provided in a sealed space formed by a sealing material, and the sealed space is filled with one or a plurality of gases selected from nitrogen, helium, argon, krypton, and neon, and oxygen and moisture in the sealed space The concentration of is to be 2 ppm or less.

In the pixel structure using such an organic light-emitting element, the organic compound layer is formed on the first electrode, and is not affected by stress because it does not contact other members on the first electrode. . For this reason, the organic light emitting device is prevented from being deteriorated due to a temperature change in the surrounding environment or a thermal stress due to self-heating.

As described above, the present invention grasps the cause of deterioration of an organic light emitting device from two aspects of an impurity factor and a structural factor, and provides solutions for each. Hereinafter, the present invention will be described in more detail with reference to embodiments.

In the present invention, the space for sealing the organic light emitting element is not only filled with a high-purity inert gas, but also by heat treatment before sealing, and temperature cycle processing of heating and cooling after sealing. By performing the dehydration treatment, the moisture remaining in the inert gas can be reduced to 50 ppm or less, preferably 1 ppm or less, and deterioration of the organic light emitting device can be reduced.

Moreover, the organic light emitting element can be prevented from being deteriorated due to thermal stress by forming the organic light emitting layer on the anode and not having contact with members formed in the periphery.

As described above, the present invention can improve the reliability of a light-emitting device by grasping the cause of deterioration of the organic light-emitting device from two aspects of an impurity factor and a structural factor, and taking appropriate measures for each.

FIG. 3 shows the structure of the light emitting device of the present invention. The substrate 201 has an insulating surface and is provided with a pixel portion 204 formed with an organic light emitting element, a drive circuit portion 203 for driving a TFT of the pixel portion 204, and a terminal portion 202 for inputting a signal from an external circuit. It has been. The pixel portion 204 and the drive circuit portion 203 are covered with a sealing plate 207 to form a sealed space 209. The sealing plate 207 is in close contact with the substrate 201 and the sealing material 206. The sealed space 209 is filled with one or a plurality of gases selected from nitrogen, helium, argon, krypton, and neon, and the dew point of this gas is −50 ° C. or lower, preferably −80 ° C. or lower. Further, a desiccant 208 is provided in the sealed space 209, and the dew point of the gas filled in the space is lowered as described above by chemically adsorbing moisture in the space. Of course, in order to lower the dew point, it is necessary to follow the manufacturing process described with reference to FIGS. 1 and 2, and it is necessary to perform a dehydration process by a temperature cycle process and promote the reaction of BaO.

The light-emitting device of FIG. 3 is an active matrix drive formed using TFTs. The pixel 205 in the pixel portion 204 includes at least an organic light emitting element and a TFT connected to the organic light emitting element. The organic light emitting element is provided on an insulating layer formed on the upper layer of the gate electrode of the TFT.

The organic light emitting device has a first electrode, an organic compound layer, and a second electrode formed on the insulating surface. The steps from the organic compound layer to the sealing plate for forming the first electrode are as follows. It is desirable to form it continuously in a closed space (or a processing chamber) without being exposed to the atmosphere.

FIG. 4 shows an example of a manufacturing apparatus for achieving the object. The transfer chamber 101 is connected to the load chamber 104, the heat treatment chamber 105, the intermediate chamber 106, and the film formation chambers 107 to 109 via gates 100a to 100f. The heat treatment chamber 105 is a place where the temperature cycle process described with reference to FIGS. 1 and 2 is performed, and a heating / cooling means 110 is provided to enable the treatment in a vacuum and in an inert gas.

The film formation chambers 107 and 108 are processing chambers for forming a film mainly composed of a low molecular organic compound by an evaporation method, and the film formation chamber 109 is formed by applying a third electrode (cathode) containing an alkali metal by an evaporation method. It is a processing chamber for film formation. The film forming chambers 107 to 109 are connected to the material exchange chambers 112 to 114 for loading the evaporation material into the evaporation source through the gates 100h to 100j. The material exchange chambers 112 to 114 are used to fill the deposition materials without opening the film formation chambers 107 to 109 to the atmosphere.

Initially, the substrate 103 on which the film is deposited is mounted in the load chamber 104 and moved to each processing chamber by the transfer means 102 in the transfer chamber 101. The load chamber 104, the transfer chamber 101, the heat treatment chamber 105, the intermediate chamber 106, the film formation chambers 107 to 109, and the material exchange chambers 112 to 114 are kept in a reduced pressure state by an exhaust means. The exhaust means is evacuated from an atmospheric pressure to about 1 Pa with an oil-free dry pump, and a pressure higher than that is evacuated with a magnetic levitation turbo molecular pump or a composite molecular pump. A cryopump may be provided in the reaction chamber in order to remove moisture. In this way, contamination by organic substances such as oil is mainly prevented from the exhaust means.

The inner wall surfaces of these evacuated rooms are mirror-finished by electropolishing to reduce the surface area and prevent gas emission. The material is stainless steel or aluminum. For the purpose of reducing gas emission from the inner wall, it is desirable to perform a baking process by providing a heater outside the reaction chamber. Baking can significantly reduce outgassing. Further, in order to prevent impurity contamination due to outgassing, it is preferable to cool using a refrigerant during vapor deposition. Thus, a vacuum degree of up to 1 × 10 ⁻⁶ Pa is realized.

The intermediate chamber 106 is connected to a coating chamber 126 provided with a spinner 111 via a gate 100g. The coating chamber 126 is a processing chamber for forming a film of an organic compound mainly made of a polymer material by a spin coating method, and this processing is performed at atmospheric pressure. For this reason, the substrate is carried out and carried in via the intermediate chamber 106, and is adjusted by adjusting the pressure to be the same as the chamber on the side where the substrate moves. The polymer organic material supplied to the coating chamber is purified and supplied by a dialysis method, an electrodialysis method, or a high performance liquid chromatograph. Purification is performed at the supply port.

The low molecular organic compound layer is formed by vapor deposition. The vapor deposition method is a resistance heating type, but a Knudsen cell may be used to control the temperature with high accuracy and to control the evaporation amount. The material for vapor deposition is introduced from a dedicated material exchange chamber attached to the reaction chamber. In this way, the opening of the reaction chamber to the atmosphere is avoided as much as possible. By opening the film formation chamber to the atmosphere, various gases including moisture are adsorbed on the inner wall, and these gases are released again by evacuation. It takes several tens to several hundreds of hours until the release of the adsorbed gas is settled and the degree of vacuum is stabilized at the equilibrium value. For this reason, the wall of the film forming chamber is baked to shorten the time. However, since repeated release to the atmosphere is not an efficient method, it is desirable to provide a dedicated material exchange chamber as shown in FIG. The evaporation source is mainly an organic material, but sublimation purification is performed in the reaction chamber before vapor deposition. A zone purification method may also be applied.

In the case where heat treatment is performed after the organic compound layer is formed, the substrate is moved to the heat treatment chamber 105. In order to form a conductive film containing an alkali metal as the third electrode (cathode), the substrate is moved to the film formation chamber 109.

On the other hand, the sealing chamber 115 partitioned by the load chamber 104 performs processing for sealing the substrate that has been completed up to the formation of the third electrode (cathode) with a sealing plate without being exposed to the atmosphere. The sealing chamber 115 is maintained at a reduced pressure of 1 × 10 ⁻⁴ Pa or less by the exhaust unit 122, but is filled with an inert gas up to atmospheric pressure by the gas supply unit 121 after the substrate is loaded. A turbo molecular pump, a cryopump, a titanium getter pump, or the like is used as the exhaust means to reduce the amount of remaining water as much as possible.

The inert gas is supplied with a dew point of −50 ° C. or lower, preferably −80 ° C. or lower after moisture is removed by the purifier 124 at the supply port. After the atmospheric pressure is reached, the supply is cut off, but an inert gas is circulated in the processing chamber by the circulator 123. In addition, a dew point meter 125 is installed in the sealing chamber 115, and the dew point of the inert gas is constantly monitored to control the purity of the inert gas.

In order to attach the sealing plate, a pattern of the sealing material is drawn by the dispenser 118 in the bonding chamber 117. When the sealing plate is bonded to the substrate on which the sealing material pattern is drawn in the sealing chamber 115, an inert gas such as high-purity nitrogen or argon is introduced and sufficiently substituted to reduce the oxygen concentration in the processing chamber. Perform in a state where it is reduced as much as possible. A desiccant is provided inside the sealing material. When an ultraviolet curable resin is used as the sealing material, a UV irradiator 116 is used.

After the sealing, the substrate is placed in the heat treatment chamber 119 and subjected to a temperature cycle process and an energization test. A process for reducing the dew point of the gas in the sealed space is performed. Thus, a light emitting device having a sealing structure as shown in FIG. 3 can be completed.

FIG. 5 is a diagram illustrating the appearance of a light-emitting device, in which a pixel portion 302, a scanning line side driver circuit 304, a signal line side driver circuit 303, and an input / output terminal 306 are formed on a substrate 301. The input / output terminal 306 and each drive circuit are connected by a wiring 305. In the pixel portion 302, a wiring 308 that also serves as a partition layer is formed in a direction in which a signal line for inputting a video signal extends. These wirings 308 include signal lines, power supply lines, and the like, but details thereof are omitted here. The wiring 307 is a wiring for connecting the third electrode (cathode) and the external input terminal, and the connection method will be described in detail in the following embodiments. Further, an IC chip on which a CPU, a memory, and the like are formed may be mounted on the element substrate by a COG (Chip on Glass) method or the like as necessary.

The organic light emitting device is formed between the wirings 308, and its structure is shown in FIG. The first electrode 310 is an individual electrode and is formed between the wirings 308. On the upper layer, an organic compound layer 311 is formed between the wirings 308, and is continuously formed in a stripe shape over the plurality of first electrodes. The second electrode 312 is formed in an upper layer of the organic compound layer 311 and is similarly formed in a stripe shape between the wirings 308. Further, the second electrode 312 is connected in a region not sandwiched between the wirings 308, that is, a region outside the pixel portion 302. The connecting portion may be formed at one end of the second electrode or at both ends thereof.

The organic light emitting element is defined by a region where the first electrode 310, the organic compound layer 311, and the second electrode 312 overlap. The first electrode 312 is individually connected to an active element in the active matrix driving type light emitting device. If there is a defect in the second electrode and there is a defect inside the pixel portion, it may be recognized as a line defect, but both ends of the second electrode are connected as shown in FIG. The structure as an electrode makes it possible to reduce the probability that such a line defect will occur.

As described above, the space for sealing the organic light emitting element is not only filled with a high-purity inert gas, but also heat treatment before sealing, and heating and cooling temperatures after sealing. By performing the dehydration process by the cycle process, the moisture remaining in the inert gas can be reduced to 50 ppm or less, preferably 1 ppm or less, and deterioration of the organic light emitting device can be reduced. Although the active matrix light-emitting device is described here, the method for manufacturing a light-emitting device of the present invention can also be applied to a passive-drive light-emitting device.

FIG. 7A illustrates an example of a pixel structure of an active matrix light-emitting device. The pixel uses a TFT as an active element, and is provided with a switching TFT 430, a current control TFT 432, and an auxiliary capacitor 431. The wiring 412 is a signal line to which a video signal is input, and the wiring 414 is a power supply line for the organic light emitting element. A scanning line 406 is connected to the gate electrode of the switching TFT 430. In the switching TFT 430, a source or drain region is formed in the semiconductor film 403, and one of them is connected to the wiring 412. The other is connected to one electrode 407 of the auxiliary capacitor 431 by a connection electrode 413. The electrode 407 also serves as the gate electrode of the current control TFT 432. A source or drain region is also formed in the current control TFT 432, and one is connected to the wiring 414. The other is connected to the electrode 415, and the electrode 415 is connected to the pixel electrode 411. Although an organic compound layer and a cathode are formed on the pixel electrode 411, they are not shown here.

The switching TFT 430 is a multi-gate in order to reduce off current. In addition, the channel width of the current control TFT 432 is increased in order to increase the current driving capability. These TFTs can be formed with a single drain structure and operated without any problem if the driving voltage is 10 V or less. In order to further reduce the off-current or prevent hot carrier deterioration, a low-concentration drain (LDD) may be provided. An equivalent circuit for the pixel having such a structure is illustrated in FIG.

FIG. 8 shows a cross-sectional structure diagram corresponding to the AA ′ line, the BB ′ line, and the CC ′ line shown in FIG.

FIG. 8A is a cross-sectional structure diagram corresponding to the line AA ′, and shows a state where a switching TFT 430, an auxiliary capacitor 431, and a current control TFT 432 are formed. A glass substrate or an organic resin substrate is used as the substrate 401 that forms a base for forming these elements. The organic resin material is lighter than the glass material, and effectively works to reduce the weight of the light emitting device itself. An organic resin material such as polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), or aramid can be used as a light-emitting device. It is desirable to use barium borosilicate glass or alumino borosilicate glass called non-alkali glass for the glass substrate. A glass substrate having a thickness of 0.5 to 1.1 mm is employed, but it is necessary to reduce the thickness in order to reduce the weight. In addition, the specific gravity is 2.37 for further weight reduction.
It is desirable to use a small g / cc.

A first insulating film 402 is formed on the substrate 401 for the purpose of preventing impurity diffusion from the substrate and controlling stress. This is formed of an insulating film containing silicon as a component. For example, a silicon nitride oxide film formed from SiH ₄ , NH ₃ , and N ₂ O is formed with a thickness of 20 to 100 nm by using a plasma CVD method. The composition has a nitrogen concentration of 20 to 30 atomic% and an oxygen concentration of 20 to 30 atomic%, and has a tensile stress. Preferably, a silicon nitride oxide film made of SiH ₄ and N ₂ O is formed as the insulating film 402b on the upper layer. The composition of this film is such that the nitrogen concentration is 1 to 20 atomic% and the oxygen concentration is 55 to 65 atomic%, and the internal stress is reduced by reducing the nitrogen concentration.

The semiconductor films 403 and 404 are formed using a silicon film having a crystal structure. A typical example is a semiconductor film formed by irradiating an amorphous silicon film manufactured by a plasma CVD method with laser light or by heat treatment. The thickness is 20 to 60 nm, and a second insulating film 405 and gate electrodes 406 and 407 that are gate insulating films are formed on the upper layer. The gate electrode 407 is connected to one electrode of the auxiliary capacitor 431.

SiH ₄ in the upper layer of the gate electrode, NH _3, a silicon nitride made from N ₂ or, SiH _4, NH _3, N ₂ consisting silicon oxynitride made from O third insulating layer 408 is formed a protective film It is used as. Further, a fourth insulating film 409 made of an organic resin material such as polyimide or acrylic is formed as a planarizing film.

A fifth insulating film 410 made of an inorganic insulating material such as silicon nitride is formed on the fourth insulating film formed of an organic resin material. Organic resin materials are hygroscopic and have the property of absorbing moisture. When the moisture is re-released, oxygen is supplied to the organic compound and the organic light-emitting element is deteriorated. Therefore, in order to prevent moisture occlusion and re-release, SiH ₄ and NH ₃ are formed on the fourth insulating film 409. to form a N ₂ nitride made from or SiH _4, NH _3, N ₂ O consisting of silicon oxynitride which is produced from the fifth insulating film 410,. Alternatively, it is possible to omit the fourth insulating film 409 and substitute only one layer of the fifth insulating film 410.

Thereafter, contact holes reaching the source or drain regions of the respective semiconductor films are formed, a transparent conductive film such as ITO (indium tin oxide) or zinc oxide is formed to a thickness of 110 nm by sputtering, and then a predetermined shape is formed. An anode 411 which is one electrode of the organic light emitting element 433 is formed by etching into a shape as shown in FIG.

The wirings 412 and 414 and the connection electrodes 413 and 415 have a laminated structure of titanium and aluminum, are formed with a total thickness of 300 to 500 nm, and form a semiconductor film and a contact. Further, the connection electrode 415 is formed so as to partially overlap the anode 411.

The insulating films 416 to 419 formed over these wirings or connection electrodes are formed using silicon nitride or the like. And the edge part is formed so that it may be located in the outer side of wiring or a connection electrode. In such a structure, a conductive film layer for forming a wiring and an insulating film are stacked and etched according to a pattern of resists 420 to 423. After that, by leaving the resist pattern as it is and etching only the conductive film, a ridge as shown in FIG. 8A can be formed. Therefore, the insulating films 416 to 419 are not necessarily limited to insulating films, and other materials can be used as long as they have a selection ratio between a conductive film for forming a wiring and etching.

Since the organic compound layer 424 and the cathode 425 are formed by an evaporation method, the organic compound layer 424 and the cathode 425 can be formed on the anode 411 in a self-aligning manner using the soot formed here as a mask. The resists 420 to 423 may be left as they are on the insulating films 416 to 419 or may be removed.

Since the organic compound layer 424 and the cathode 425 cannot be wet-processed (such as chemical etching or water washing), it is necessary to provide a partition layer made of an insulating material in accordance with the anode 411 to isolate and isolate adjacent elements. However, if the pixel structure of the present invention is used, the function of the partition layer can be substituted with the wiring and the insulating film thereon.

As described above, the organic light emitting element 433 includes an anode 411 formed of a transparent conductive material such as ITO, an organic compound layer 424 having a hole injection layer, a hole transport layer, a light emitting layer, and the like, and an alkali metal such as MgAg and LiF. Alternatively, the cathode 425 is formed using a material such as an alkaline earth metal.

8B shows a cross-sectional structure corresponding to the line BB ′ in FIG. 7, and FIG. 8C shows a cross-sectional structure corresponding to the line CC ′.

In the input terminal portion, as shown in FIG. 10A, an input terminal 451 is formed of the same material as the gate electrode. The third insulating film 408, the fourth insulating film 409, and the fifth insulating film 410 formed thereon can be removed at the same time when the contact hole is etched, and the surface thereof can be exposed. When a transparent conductive film 452 is stacked on the input terminal 451, connection with the FPC can be formed.

Since the cathode of the organic light emitting element 433 serves as a common electrode, it is connected outside the pixel portion. And it connects with the wiring of an external input terminal so that an electric potential can be controlled from the outside. FIG. 10B shows an example of the connection structure. The wiring 453 is a wiring formed in the same layer as the gate electrode. The third insulating film 408, the fourth insulating film 409, and the fifth insulating film 410 formed thereon are simultaneously removed when the contact holes are etched to expose their surfaces. The organic compound layer 424 is formed by a vapor deposition method, but is formed over the entire surface of the substrate as it is, and thus is formed in accordance with the region of the pixel portion using a shadow mask such as a metal mask or a ceramic mask. The cathode 425 is similar, but the size of the mask is changed so that the region outside the pixel portion is formed. By such treatment, the structure shown in FIG. 10B can be obtained.

Thus, the organic light emitting element 433 is formed on the anode and is not subjected to stress from the members formed in the periphery. Therefore, it is possible to prevent the organic light emitting element from deteriorating due to thermal stress or the like. Then, a highly reliable light-emitting device can be manufactured by sealing the organic light-emitting element through the process described with reference to FIGS.

In Example 1, another structure of the organic light emitting device described with reference to FIG. 8 will be described with reference to FIG. After forming the anode 411, a seventh insulating film is formed. This insulating film is formed of silicon oxide or silicon nitride. Thereafter, the seventh insulating film on the anode 411 is removed by etching. At this time, as shown in FIG. 9, the end of the anode 411 is overlapped with the seventh insulating film. Thus, a patterned seventh insulating film 440 is formed.

The subsequent steps are the same, and a connection electrode 415, an insulating film 419, and the like are formed. The organic compound layer 424 and the cathode 425 are formed as shown in FIG. 9. By providing the seventh insulating film 440, it is possible to prevent the cathode 425 and the anode 411 from coming into contact with each other at an end portion and short-circuiting.

Of course, the pixel structure shown in this embodiment can prevent deterioration of the organic light emitting element due to thermal stress, and the organic light emitting element is sealed by the process described with reference to FIG. A device can be made.

Although the top gate type TFT is shown as an example in Embodiment 1, the switching TFT 430 and the current control TFT 432 can be similarly formed even if a bottom gate type or an inverted stagger type TFT is used. A light emitting device can be formed in the same manner as in Example 1.

The organic light emitting device applied in the present invention is not limited to the structure. An organic light-emitting element is formed with an anode made of a light-transmitting conductive film, a cathode containing an alkali metal, and a layer made of an organic compound therebetween. The layer made of an organic compound is composed of one layer or a plurality of layers. Each layer is referred to as a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, or the like depending on its purpose and function. These can be formed by either a low molecular organic compound material, a high molecular organic compound material, or a combination of both.

For the hole injection layer and the hole transport layer, an organic compound material having excellent hole transport properties is selected, and typically, a phthalocyanine-based or aromatic amine-based material is employed. In addition, a metal chain having an excellent electron transport property is used for the electron injection layer.

FIG. 11 shows an example of the structure of the organic light emitting device. FIG. 11A illustrates an example of an organic light-emitting element using a low-molecular organic compound, which includes an anode 500 formed of indium tin oxide (ITO) and copper phthalocyanine (ITO) over an insulating film 508 formed of silicon nitride or silicon nitride oxide. Hole injection layer 501 formed of CuPc), hole transport layers 502 and 503 formed of MTDATA and α-NPD which are aromatic amine materials, tris-8-quinolinolato aluminum complex (Alq ₃ ) A formed electron injection layer / light emitting layer 504 and a cathode 505 made of ytterbium (Yb) are stacked. Alq ₃ enables light emission (fluorescence) from a singlet excited state. The barrier layer is formed of a photosensitive organic resin, and has a reverse taper type in which one end of the bottom is in contact with the anode and the top is located inside the anode. After forming up to the cathode 505, a protective insulating film is formed thereon, and the organic compound layer and the cathode are sealed so as not to directly touch the atmosphere.

In order to increase luminance, it is preferable to use light emission (phosphorescence) from a triplet excited state. FIG. 11B shows an example of such an element structure. On the anode 510 formed of ITO, the hole injection layer 511 formed of CuPc which is a phthalocyanine-based material, and the hole transport layer 512 formed of α-NPD which is an aromatic amine-based material, carbazole-based CBP + Ir ( The light emitting layer 513 is formed using (ppy) ₃ . Further, a hole blocking layer 514 is formed using bathocuproine (BCP), and an electron injection layer 515 made of Alq ₃ is formed.

The above two structures are examples using a low molecular weight organic compound, but an organic light emitting device combining a high molecular weight organic compound and a low molecular weight organic compound can be realized. FIG. 11C shows an example, in which a hole injection layer 521 is formed using a polythiophene derivative (PEDOT) of a high molecular organic compound, a hole transport layer 522 using α-NPD, and a light emitting layer using CBP + Ir (ppy) _3. 523, a hole blocking layer 524 made of BCP, and an electron injection layer 525 made of Alq ₃ are formed. By changing the hole injection layer to PEDOT, the hole injection characteristics can be improved and the light emission efficiency can be improved.

As the light emitting layer, tris- (2-phenylpyridine) iridium (hereinafter referred to as Ir (ppy) ₃ ) and 4,4′-N, N′-dicarbazole-biphenyl (hereinafter referred to as CBP) are triplet excited states. It is an organic compound that can obtain light emission (phosphorescence) from. Examples of the triplet compound include organic compounds described in the following papers as typical materials. (1) T. Tsutsui, C. Adachi, S. Saito, Photochemical Processes in Organized Molecular Systems, ed. K. Honda, (Elsevier Sci. Pub., Tokyo, 1991) p.437. (2) MABaldo, DFO ' Brien, Y.You, A.Shoustikov, S.Sibley, METhompson, SRForrest, Nature 395 (1998) p.151. This paper discloses an organic compound represented by the following formula. (3) MABaldo, S. Lamansky, PEBurrrows, METhompson, SRForrest, Appl. Phys. Lett., 75 (1999) p. 4. (4) T. Tsutsui, M.-J. Yang, M. Yahiro, K. Nakamura, T. Watanabe, T. tsuji, Y. Fukuda, T. Wakimoto, S. Mayaguchi, Jpn. Appl. Phys., 38 (12B) (1999) L1502.

In addition to the light-emitting material described in the above paper, it is considered possible to use a light-emitting material represented by the following molecular formula (specifically, a metal complex or an organic compound).

In the above molecular formula, M is an element belonging to groups 8 to 10 of the periodic table. In the above paper, platinum and iridium are used. Further, the present inventor believes that nickel, cobalt, or palladium is preferable in terms of reducing the manufacturing cost of the EL display device because it is cheaper than platinum or iridium. In particular, nickel is considered preferable because it is easy to form a complex and has high productivity. In any case, light emission from the triplet excited state (phosphorescence) has higher emission efficiency than light emission from the singlet excited state (fluorescence), and the operating voltage (light emission from the organic light emitting element) can be obtained with the same light emission luminance. The voltage required for making it low) can be lowered.

Phthalocyanine-based CuPc, aromatic amine-based α-NPD, MTDATA, carbazole-based CBP, and the like are all organic compounds that do not contain oxygen. When oxygen or moisture is mixed into such an organic compound, the bonding state changes, and hole transport characteristics and light emission characteristics are deteriorated. However, in the formation of such an organic compound layer, such deterioration can be prevented by sealing with the manufacturing method described in FIG. In addition, although the laminated structure of the organic compound layer has been described here, a light emitting device with excellent color development can be obtained by using a light emitting layer that emits red, blue, and green light.

The light-emitting device of the present invention is characterized by excellent visibility in a bright place as compared with a liquid crystal display device and a wide viewing angle. Therefore, it can be applied to various electronic devices. Such electronic devices include video cameras, digital cameras, goggles type display devices (head mounted displays), navigation systems, sound playback devices (car audio, audio components, etc.), notebook personal computers, game machines, portable information terminals ( A mobile computer, a mobile phone, a portable game machine, an electronic book, or the like), an image reproducing device provided with a recording medium, and the like. In particular, a portable information terminal that is often viewed from an oblique direction emphasizes the wide viewing angle, and thus it is desirable to use a light emitting device. Specific examples of these electronic devices are shown in FIGS.

FIG. 12A illustrates a monitor such as a desktop personal computer, which includes a housing 3301, a support base 3302, a display portion 3303, and the like. The present invention can be applied to the display portion 3303 to complete a monitor such as a desktop personal computer. This monitor does not require a backlight and can be lighter and thinner than a liquid crystal display device.

FIG. 12B illustrates a video camera, which includes a main body 3311, a display portion 3312, an audio input portion 3313, operation switches 3314, a battery 3315, an image receiving portion 3316, and the like. The present invention can be applied to the display portion 3312 to complete a video camera.

FIG. 12C illustrates a part of the head mounted display (on the right side), which includes a main body 3321, a signal cable 3322, a head fixing band 3323, a projection unit 3324, an optical system 3325, a display unit 3326, and the like. The present invention can be applied to the display portion 3326 to complete a head mounted display.

FIG. 12D illustrates an image reproduction device (specifically, a DVD reproduction device) provided with a recording medium, which includes a main body 3331, a recording medium (DVD or the like) 3332, an operation switch 3333, a display unit (a) 3334, and a display unit. (B) 3335 or the like. The display unit (a) 3334 mainly displays image information, and the display unit (b) 3335 mainly displays character information. The present invention is applied to the display unit (a) 3334 and the display unit (b) 3335. An image reproducing apparatus can be completed. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.

FIG. 12E illustrates a goggle type display device (head mounted display), which includes a main body 3341, a display portion 3342, and an arm portion 3343. The present invention can be applied to the display portion 3342 to complete a goggle type display device (head mounted display).

FIG. 12F illustrates a laptop personal computer, which includes a main body 3351, a housing 3352, a display portion 3353, a keyboard 3354, and the like. The present invention can be applied to the display portion 3353 and a notebook personal computer can be completed.

In addition, the electronic devices often display information distributed through electronic communication lines such as the Internet and CATV (cable television), and in particular, opportunities for displaying moving image information are increasing. Since the response speed of the organic light emitting element is very high, the light emitting device of the present invention is suitable for the application.

In addition, since the light emitting portion of the light emitting device consumes power, it is desirable to display information so that the light emitting portion is reduced as much as possible in order to save power. Therefore, when the light-emitting device of the present invention is used in a display unit mainly including character information such as a portable information terminal, particularly a mobile phone or a sound reproduction device, the character information is formed by the light-emitting part with the non-light-emitting part as the background. It is desirable to drive as follows.

FIG. 13A illustrates a mobile phone, which includes a main body 3401, an audio output portion 3402, an audio input portion 3403, a display portion 3404, operation switches 3405, and an antenna 3406. The present invention can be applied to the display portion 3404 to complete a mobile phone. Note that the display portion 3404 can reduce power consumption of the mobile phone by displaying white characters on a black background.

FIG. 13B illustrates a sound reproduction device, specifically a car audio, which includes a main body 3411, a display portion 3412, and operation switches 3413 and 3414. The present invention can be applied to the display portion 3412 to complete the sound reproducing device. Moreover, although the vehicle-mounted audio is shown in the present embodiment, it may be used for a portable or household sound reproducing device. Note that the display portion 3414 can reduce power consumption by displaying white characters on a black background. This is particularly effective in a portable sound reproducing apparatus.

FIG. 13C illustrates a digital camera, which includes a main body 3501, a display portion (A) 3502, an eyepiece portion 3503, operation switches 3504, a display portion (B) 3505, and a battery 3506. The present invention can be applied to the display portion (A) 3502 and the display portion (B) 3505 to complete a digital camera. In the case where the display portion (B) 3505 is mainly used as an operation panel, power consumption can be suppressed by displaying white characters on a black background.

In the electronic device shown in this embodiment, as a method for reducing power consumption, a sensor unit that senses external brightness is provided, and when used in a dark place, the luminance of the display unit is reduced. For example, a method of adding a function such as dropping a function. As described above, the applicable range of the present invention is so wide that the present invention can be applied to various electronic devices. Further, the electronic apparatus of the present embodiment can be realized by using a configuration including any combination of the first to fourth embodiments.

FIG. 9 is a flowchart illustrating a method for manufacturing a light-emitting device of the present invention. 4A and 4B illustrate a temperature change in a manufacturing process of a light-emitting device of the present invention. FIG. 6 is a cross-sectional view illustrating a structure of a light-emitting device of the present invention. FIG. 6 is a top view illustrating a structure of a light-emitting device of the present invention. 4A and 4B illustrate a structure of a pixel portion of a light-emitting device of the present invention. 4A and 4B illustrate an example of a manufacturing device used for manufacturing a light-emitting device of the present invention. FIG. 7 is a top view illustrating a structure of one pixel in a pixel portion of a light-emitting device of the present invention. 4 is a cross-sectional view illustrating a structure of a pixel in a pixel portion of a light-emitting device of the present invention. Sectional drawing explaining one Example of the organic light emitting element of this invention. Sectional drawing which shows the connection part of the terminal part of the light-emitting device of this invention, a cathode, and wiring. 3A and 3B illustrate a structure of an organic light emitting element. 4A and 4B illustrate an application example of a light-emitting device of the present invention. 4A and 4B illustrate an application example of a light-emitting device of the present invention.

Claims (19)

In a state in which the drying agent and the organic light-emitting element is sealed in the closed space, the method for manufacturing a light emitting device, characterized in that with respect to the organic light emitting device, the temperature cycling comprising a heat treatment and cooling process . In claim 1,
In the method for manufacturing a light-emitting device, the temperature cycle treatment includes performing the cooling treatment after the heat treatment. In claim 1,
In the method for manufacturing a light-emitting device, the temperature cycle treatment is performed after the cooling treatment. Desiccant, in a state in which an organic light emitting device, is sealed in the closed space having the organic compound layer is sandwiched structure between two electrodes, to the organic light emitting element, a first heat treatment Performing a first temperature cycle process including a first cooling process,
Performing a process of applying a voltage between the two electrodes;
A method for manufacturing a light-emitting device, wherein a second temperature cycle process including a second heat treatment and a second cooling process is performed on the organic light-emitting element. In claim 4,
The method for manufacturing a light-emitting device is characterized in that the process of applying the voltage is an energization test of the organic light-emitting element. A first step of forming a first electrode;
A second step of forming an organic compound layer on the first electrode;
A third step of performing heat treatment under reduced pressure after the second step;
A fifth step of forming the organic light emitting device by a fourth step of forming a third electrode on the organic compound layer and then sealing the organic light emitting device in a sealed space provided with a desiccant; and ,
And a sixth step of heating and cooling the organic light-emitting element after the fifth step. A first step of forming a first electrode;
A second step of forming an organic compound layer on the first electrode;
A fourth step of forming an organic light emitting device by a third step of forming a third electrode on the organic compound layer, and then sealing the organic light emitting device in a sealed space provided with a desiccant; and ,
And a fifth step of heating and cooling the organic light-emitting element after the fourth step.   8. The method for manufacturing a light-emitting device according to claim 6, wherein the heating and cooling steps are repeated a plurality of times.   The method for manufacturing a light-emitting device according to claim 6, wherein the dew point of the sealed space is set to −50 ° C. or lower by the heating and cooling steps.   10. The method for manufacturing a light-emitting device according to claim 6, wherein the oxygen and moisture concentrations in the sealed space are reduced to 50 ppm or less by the heating and cooling steps.   11. The light-emitting device according to claim 6, wherein the sealed space is filled with one or plural kinds of gases selected from nitrogen, helium, argon, krypton, and neon. Manufacturing method.   12. The method for manufacturing a light-emitting device according to claim 6, wherein the desiccant is barium oxide.   13. The method for manufacturing a light-emitting device according to claim 1, wherein the light-emitting device is an active matrix driving method. In a state in which the drying agent and the organic light-emitting element is sealed in the closed space, to the organic light emitting element, the deterioration prevention of the light-emitting device which is characterized in that the temperature cycling comprising a heat treatment and cooling process Method. In claim 14,
The method for preventing deterioration of a light-emitting device, wherein the temperature cycle process includes performing the cooling process after the heat process. In claim 14,
The method for preventing deterioration of a light-emitting device, wherein the temperature cycle process is performed after the cooling process. Desiccant, in a state in which an organic light emitting device, is sealed in the closed space having the organic compound layer is sandwiched structure between two electrodes, to the organic light emitting element, a first heat treatment Performing a first temperature cycle process including a first cooling process,
Performing a process of applying a voltage between the two electrodes;
A method for preventing deterioration of a light emitting device, wherein a second temperature cycle process including a second heat treatment and a second cooling process is performed on the organic light emitting element. In claim 17,
The method for preventing deterioration of a light-emitting device, wherein the process of applying the voltage is an energization test of the organic light-emitting element. The method for preventing deterioration of a light-emitting device according to claim 14, wherein the light-emitting device is an active matrix driving method.

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