JP4121740B2 - Manufacturing method of semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor element, and more particularly to a method for manufacturing a semiconductor element in which a semiconductor layer is formed on a substrate.
[0002]
[Prior art]
In recent years, semiconductor devices using nitride compound semiconductors have been actively developed as semiconductor devices used for semiconductor light emitting devices such as light emitting diode devices and electronic devices such as transistors. When manufacturing such a nitride semiconductor device, it is difficult to manufacture a substrate made of GaN. Therefore, a nitride semiconductor layer made of GaN is formed on a substrate made of sapphire, SiC, Si or GaAs. Epitaxial growth.
[0003]
In this case, since a lattice constant or a thermal expansion coefficient is different between a substrate such as sapphire and GaN, an internal stress is generated between the substrate such as sapphire and the nitride-based semiconductor layer grown on the substrate. For this reason, there has been a disadvantage that the substrate is warped.
[0004]
Therefore, conventionally, in order to reduce the warpage of the substrate, for example, Japanese Patent Laid-Open No. 10-177974 discloses that an element is formed on a semiconductor layer grown on the substrate and then reaches the inside of the substrate from the surface of the semiconductor layer. A method for preventing warpage of a substrate during element isolation by forming a groove and polishing the back surface of the substrate to the final device thickness and then performing element isolation is disclosed.
[0005]
[Problems to be solved by the invention]
However, in the conventional method disclosed in the above publication, since the groove is formed after the element is formed, it is difficult to reduce the warpage of the substrate that occurs when the semiconductor layer is grown on the substrate before the element is formed. In particular, in a nitride-based semiconductor element, it is necessary to form a thick nitride-based semiconductor layer on the substrate to reduce dislocations. Therefore, when the semiconductor layer is formed on the substrate, thermal expansion between the substrate and the semiconductor layer occurs. There was an inconvenience of warping due to the difference in rate. Therefore, it is difficult to perform an element formation process such as a photolithography process, and as a result, there is a problem in that the yield of the element manufacturing process is reduced.
[0006]
The present invention has been made to solve the above problems,
One object of the present invention is to provide a method of manufacturing a semiconductor device capable of improving the yield of the device manufacturing process.
[0007]
Another object of the present invention is to form an element with reduced warpage in the method for manufacturing a semiconductor element described above.
[0008]
[Means for Solving the Problems]
A method of manufacturing a semiconductor device according to one aspect of the present invention includes a step of forming a semiconductor layer on a substrate, a step of forming a groove in the semiconductor layer to be separated into a region where a plurality of devices are formed, and then a semiconductor And a step of forming an element in the layer.
[0009]
In the method of manufacturing a semiconductor element according to this aspect, as described above, after forming a groove to be separated into a region where a plurality of elements are formed in the semiconductor layer, the element is formed in the semiconductor layer, whereby the substrate is formed by the groove. An element can be formed in a state where stress caused by the difference in thermal expansion coefficient between the semiconductor layer and the semiconductor layer is relaxed. Accordingly, since the element can be formed with the warpage reduced, the element manufacturing process can be easily performed. As a result, the yield of the element manufacturing process can be improved.
[0010]
In the method of manufacturing a semiconductor element according to the above aspect, preferably, the step of forming the groove includes a step of forming the groove so as to be substantially orthogonal, and an interval between the grooves adjacent to each other in the first direction; The interval between the grooves adjacent to each other in the second direction substantially orthogonal to the first direction is substantially equal. With this configuration, since the region surrounded by the grooves becomes a square, it is possible to relieve stress uniformly in the X direction and the Y direction within a plane parallel to the surface of the substrate. Thereby, warpage can be reduced uniformly in the X direction and the Y direction within a plane parallel to the surface of the substrate.
[0011]
The method for manufacturing a semiconductor element preferably further includes a step of filling the groove with a resin after the step of forming the groove and before the step of forming the element. According to this structure, the entire top surface of the semiconductor layer is flattened by the resin filled in the groove, so that a resist coating process or the like when forming an element on the semiconductor layer can be smoothly performed.
[0012]
In the method for manufacturing a semiconductor element, preferably, the step of forming the groove includes a step of forming the groove so as to reach the substrate. If comprised in this way, since the semiconductor layer of a groove part is removed completely, a semiconductor layer will be in the state finely divided | segmented by the groove | channel which cross | intersects. Thereby, the stress resulting from the difference in coefficient of thermal expansion between the substrate and the semiconductor layer can be further relaxed.
[0013]
In the semiconductor device manufacturing method, preferably, the step of forming the groove includes the step of forming the groove so as to be substantially parallel to either the cleavage plane of the substrate or the cleavage plane of the semiconductor layer. . With this configuration, when it is necessary to expose the cleaved surface of the substrate or the semiconductor layer, a flat cleaved surface can be easily obtained by separating the elements along the groove. Then, since the flat cleavage surface can be used as it is, for example, as the resonance surface of the semiconductor laser element, the element characteristics can be improved. In addition, since the shape defects can be reduced, the yield of the elements can be improved.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF EXEMPLARY EMBODIMENTS Embodiments of the invention will be described below with reference to the drawings.
[0015]
(First reference Form)
FIG. 1 shows the first of the present invention. reference It is the top view which showed the state before the element isolation | separation process of the semiconductor element (nitride-type semiconductor laser element) by a form. FIG. 2 shows the first shown in FIG. reference It is the enlarged plan view which showed the element formation area of the semiconductor element (nitride-type semiconductor laser element) by a form. FIG. 3 shows the first example shown in FIG. reference It is the perspective view which showed the state after the element separation process of the semiconductor element (nitride type | system | group semiconductor laser element) by a form.
[0016]
First, referring to FIG. reference The structure of the nitride-based semiconductor laser device according to the form after the device isolation will be described. This first reference In the embodiment, as shown in FIG. 3, an AlGaN low-temperature buffer layer 2 and a non-doped GaN layer 3 are formed on a sapphire substrate 1. On this non-doped GaN layer 3, an n-type GaN contact layer 4, an n-type AlGaN cladding layer 5, an MQW active layer 6 made of InGaN, and a p-type AlGaN cladding layer 7 including a convex portion are formed in this order. . A p-type GaN contact layer 8 is formed on the convex portion of the p-type AlGaN cladding layer 7. The convex portion of the p-type AlGaN cladding layer 7 and the p-type GaN contact layer 8 constitute a striped ridge portion. A “semiconductor layer” 14 is formed by the layers 2 to 8 described above.
[0017]
A p-side electrode 9 is formed on the p-type GaN contact layer 8. Furthermore, SiO 2 is covered so as to cover a region other than the upper surface of the p-side electrode 9 and expose a part of the upper surface of the n-type GaN contact layer 4. ₂ A protective film 10 is formed. A p-side pad electrode 11 is formed so as to be in contact with the upper surface of the p-side electrode 9. An n-side electrode 12 is formed so as to contact the exposed upper surface of the n-type GaN contact layer 4. An n-side pad electrode 13 is formed on the n-side electrode 12.
[0018]
Next, the first reference As a structure before the element isolation step of the nitride semiconductor laser element of the embodiment, as shown in FIGS. 1 and 2, an element formation region 16 is formed on a sapphire substrate 1 made of a circular wafer. Grooves 15 a and 15 b having a width of about 100 μm to about 200 μm and a depth reaching the surface of the sapphire substrate 1 are formed so as to surround the element formation region 16. The groove portion 15a and the groove portion 15b are substantially orthogonal to each other, and are formed such that the interval between the adjacent groove portions 15a and the interval between the adjacent groove portions 15b are both about 2 mm. The element formation region 16 surrounded by the grooves 15a and 15b has a square shape and includes eight nitride-based semiconductor laser elements 17. The groove 15a and the groove 15b are examples of the “groove” in the present invention.
[0019]
4 to 8 show the first shown in FIGS. reference It is sectional drawing for demonstrating the manufacturing process of the nitride type semiconductor laser element by a form. FIG. 5 is a cross-sectional view showing the detailed structure of the semiconductor layer in the step shown in FIG. Hereinafter, referring to FIGS. reference A manufacturing process of the nitride-based semiconductor laser device of the embodiment will be described.
[0020]
First, as shown in FIG. 4, the semiconductor layer 14 is formed on the sapphire substrate 1 using MOCVD. Specifically, as shown in FIG. 5, the AlGaN low-temperature buffer layer 2 is formed on the sapphire substrate 1 by MOCVD. Next, the non-doped GaN layer 3 is formed with a thickness of about 15 μm on the AlGaN low-temperature buffer layer 2. Next, an n-type GaN contact layer 4, an n-type AlGaN clad layer 5, an MQW active layer 6 made of InGaN, a p-type AlGaN clad layer 7, and a p-type are formed on the non-doped GaN layer 3 by MOCVD. The GaN contact layer 8 is formed sequentially. Each of the layers 4 to 8 formed on the non-doped GaN layer 3 has a total thickness of about 5 μm and constitutes a semiconductor element layer.
[0021]
The above-described growth process of the semiconductor layer 14 is performed at a high temperature of about 1000 ° C. Therefore, as shown in FIG. 6, when the substrate temperature is lowered to room temperature, internal stress is generated due to the difference in thermal expansion coefficient between the sapphire substrate 1 and the semiconductor layer 14. As a result, warpage occurs in the sapphire substrate 1 and the semiconductor layer 14.
[0022]
From the state shown in FIG. reference In the embodiment, as shown in FIG. 7, the sapphire substrate 1 is bonded to the glass plate 18 using wax 19. Thereby, the curvature of the sapphire substrate 1 and the semiconductor layer 14 generated in the above process is corrected.
[0023]
In this state, the first reference In the embodiment, as shown in FIG. 8, the groove 15 a and the groove 15 b having a depth reaching the surface of the sapphire substrate 1 are formed in the semiconductor layer 14 by dry etching using chlorine gas. Here, as shown in FIGS. 1 and 2, the groove 15a and the groove 15b are substantially orthogonal, and the interval between the adjacent groove portions 15a and the interval between the adjacent groove portions 15b are both about 2 mm. It forms so that it may become. Thereby, as shown in FIG. 2, the element forming region 16 including the eight nitride semiconductor laser elements 17 and having a square shape is formed.
[0024]
Next, after separating the sapphire substrate 1 from the glass plate 18, a part of the n-type GaN contact layer 4 is exposed in the element formation region 16 as shown in FIG. At the same time, a ridge portion composed of the convex portion of the p-type AlGaN cladding layer 7, the p-type GaN contact layer 8, and the p-side electrode 9 is formed. Thereafter, the region other than the upper surface of the p-side electrode 9 is covered, and a part of the upper surface of the n-type GaN contact layer 4 is exposed. ₂ A protective film 10 is formed. Then, the n-side electrode 12 is formed so as to be in contact with the upper surface of the n-side GaN contact layer 4. Further, the p-side pad electrode 11 and the n-side pad electrode 13 are formed on the upper surfaces of the p-side electrode 9 and the n-side electrode 12 so as to be in contact with each other. Then, after the back surface of the sapphire substrate 1 is polished to a predetermined thickness, element isolation is performed using dicing and cleavage. In this way, the first reference The nitride-based semiconductor laser device of the form is formed.
[0025]
First reference In the embodiment, as described above, the groove portion 15a and the groove portion 15b are formed so as to surround the four sides of the element forming region 16, thereby generating the difference in thermal expansion coefficient between the sapphire substrate 1 and the semiconductor layer 14. Internal stress can be removed. Thereby, since an element can be formed in a state where warpage is reduced, the element formation process can be easily performed. As a result, the yield of the element formation process can be improved.
[0026]
The first reference In the embodiment, as described above, the groove portion 15a and the groove portion 15b are formed so that the shape of the element forming region 16 is a square, and thereby uniform in the X direction and the Y direction within a plane parallel to the surface of the sapphire substrate 1. The stress can be relaxed. Thereby, warpage can be reduced uniformly in the X direction and the Y direction within a plane parallel to the surface of the sapphire substrate 1. As a result, the element formation process can be performed more easily.
[0027]
(Second reference Form)
FIG. 9 shows the second of the present invention. reference It is the top view which showed the state before the element isolation | separation process of the semiconductor element (nitride-type semiconductor laser element) by a form. FIG. 10 shows the second example shown in FIG. reference It is an enlarged plan view of the element formation region of the semiconductor element (nitride-based semiconductor laser element) according to the form. Referring to FIG. 9 and FIG. reference In form, the first mentioned above reference Unlike the embodiment, an example in which the element formation region is formed to have a rectangular shape will be described. The second reference The other configuration of the form is the first reference It is the same as the form.
[0028]
That is, the second reference In the manufacturing process of the nitride-based semiconductor laser device according to the embodiment, the first process shown in FIGS. reference After the manufacturing process similar to that of the embodiment, in the step of forming the groove shown in FIG. 8, as shown in FIGS. 9 and 10, the groove 25a and the groove 25b are formed so that the element formation region 26 is rectangular. . Specifically, the groove 25a and the groove 25b that are orthogonal to each other are formed to have a depth that reaches the surface of the sapphire substrate 1 by dry etching using chlorine gas. In this case, the groove portions 25a are formed with an interval of about 2 mm, and the groove portions 25b are formed with an interval of about 1 mm. As a result, an element forming region 26 including four nitride semiconductor laser elements 27 and having a rectangular shape is formed. The groove 25a and the groove 25b are examples of the “groove” in the present invention.
[0029]
Then the first reference The first manufacturing process shown in FIG. reference A second having a structure similar to the structure of the form reference The nitride-based semiconductor laser device having the above configuration is completed.
[0030]
Second mentioned above reference In the manufacturing process of the nitride-based semiconductor laser device of the embodiment, the first reference Similar to the embodiment, by forming the groove 25a and the groove 25b having a depth reaching the sapphire substrate 1 so as to surround the four sides of the element formation region 26, the difference in thermal expansion coefficient between the sapphire substrate 1 and the semiconductor layer is increased. The internal stress generated due to this can be removed. Thereby, since an element can be formed in a state where warpage is reduced, the element formation process can be easily performed. As a result, the yield of the element formation process can be improved. In particular, the second reference In the embodiment, by forming the groove 25a and the groove 25b having different intervals in the X and Y directions, the anisotropy of the warp can be corrected when the warp of the wafer has an in-plane anisotropy. Specifically, the anisotropy of the warp is easily corrected by disposing the groove portion 25b having the smaller groove interval in the direction (X direction) perpendicular to the direction in which the warp amount is large (for example, the Y direction). be able to.
[0031]
(No. 1 Embodiment)
11 and 12 show the first embodiment of the present invention. 1 It is sectional drawing which showed the manufacturing process of the semiconductor element (nitride type | system | group semiconductor laser element) by embodiment. This first 1 In the embodiment, an example in which a groove formed in a semiconductor layer is filled with a polyimide resin will be described. The first 1 The other configuration of the embodiment is the first reference It is the same as the form. Details will be described below.
[0032]
I.e. 1 In the manufacturing process of the nitride-based semiconductor laser device according to the embodiment, the first process shown in FIGS. reference After passing through the manufacturing process similar to the form, the sapphire substrate 1 is separated from the glass plate 18. This state is shown in FIG. Thereafter, polyimide resin (not shown) is applied to the upper surface of the semiconductor layer 14 so as to fill the groove 15a and the groove 15b. Then, after the polyimide resin is cured by performing a heat treatment at about 300 ° C., the polyimide resin adhering to the regions other than the groove 15a and the groove 15b is removed by dry etching using oxygen plasma. As shown in FIG. 4, the grooves 15a and 15b
A shape filled with the mid resin 30 is obtained. The polyimide resin 30 is an example of the “resin” in the present invention.
[0033]
Next, after forming an element in the element formation region 16 using a resist coating process, an etching process, or the like, the polyimide resin 30 is removed by dry etching using oxygen plasma. Then the first reference The first manufacturing process shown in FIG. reference No. having the same structure as the form 1 The nitride semiconductor laser device of the embodiment is completed.
[0034]
First 1 In the embodiment, as described above, the upper surface of the semiconductor layer 14 is filled by filling the groove portions 15a and 15b with the polyimide resin 30 after the step of forming the groove portions 15a and 15b and before the step of forming elements. Thus, the resist coating process when forming the nitride-based semiconductor laser element on the semiconductor layer 14 can be performed smoothly.
[0035]
The first 1 Other effects, such as the warp reduction effect by the groove part 15a and the groove part 15b of embodiment, are 1st. reference It is the same as the form.
[0036]
(No. 3 Reference Form)
FIG. 13 shows the first aspect of the present invention. 3 Reference It is the top view which showed the state before the element isolation | separation process of the semiconductor element (nitride-type semiconductor laser element) by a form. 14 is the same as that shown in FIG. 3 Reference It is an enlarged plan view of the element formation region of the semiconductor element (nitride-based semiconductor laser element) according to the form. FIG. 15 and FIG. 3 Reference It is sectional drawing for demonstrating the manufacturing process of the semiconductor element (nitride-type semiconductor laser element) by a form. This first 3 Reference In the form, the first reference Unlike the embodiment, an example will be described in which the depth of the groove is set so as not to reach the sapphire substrate. The first 3 Reference The other configuration of the form is the first reference It is the same as the form. Details will be described below.
[0037]
I.e. 3 Reference In the manufacturing process of the nitride-based semiconductor laser device according to the embodiment, after the manufacturing process similar to that of the first embodiment shown in FIGS. 4 to 7, the step of forming the groove shown in FIG. 8 is shown in FIG. As described above, the groove 45a and the groove 45b are formed by dry etching using chlorine gas so as to leave about one-third of the total thickness of the semiconductor layer 14. The groove 45a and the groove 45b are examples of the “groove” in the present invention. Moreover, the groove part 45a and the groove part 45b are the first reference Similar to the embodiment, as shown in FIG. 13 and FIG. 14, they are formed so that they are substantially orthogonal and the interval between the adjacent groove portions 45 a and the interval between the adjacent groove portions 45 b are both about 2 mm. As a result, as shown in FIG. 14, the element forming region 46 including the eight nitride semiconductor laser elements 47 and having a square shape is formed. Thereafter, as shown in FIG. 16, the sapphire substrate 1 is separated from the glass plate 18.
[0038]
Then the first reference The first manufacturing process shown in FIG. reference The second has the same structure as the structure of the form 3 Reference The nitride-based semiconductor laser device having the above configuration is completed.
[0039]
First 3 Reference In the form, the first reference Similar to the embodiment, the groove 45a and the groove 45b are formed so as to surround the four sides of the element formation region 46 before the element is formed, and this occurs due to a difference in thermal expansion coefficient between the sapphire substrate 1 and the semiconductor layer 14. It is possible to reduce internal stress. The first 3 Reference In the embodiment, the groove portion 45a and the groove portion 45b are formed while leaving a thickness of about one third of the entire thickness of the semiconductor layer 14, but even in this case, the element is formed in a state where the warpage of the substrate is reduced. Therefore, the element formation process can be easily performed. As a result, the yield of the element formation process can be improved.
[0040]
First 3 Reference Other effects of the form are the first reference It is the same as the form.
[0041]
(No. 4 Reference Form)
FIG. 17 shows the first of the present invention. 4 Reference It is a top view for demonstrating the manufacturing process of the semiconductor element (nitride-type semiconductor laser element) by a form. This first 4 Reference In form, the first reference In the manufacturing process of the embodiment, an example in which one groove is formed so as to be parallel to the (10-10) plane (cleavage plane) of the crystal lattice of the sapphire substrate will be described. First 4 Reference Other configurations of the form are the first reference It is the same as the form. Details will be described below.
[0042]
I.e. 4 Reference In the manufacturing process of the nitride-based semiconductor laser device according to the embodiment, the first process shown in FIGS. reference After the manufacturing process similar to that of the embodiment, in the step of forming the groove shown in FIG. 8, the groove 15 a having a depth reaching the surface of the sapphire substrate 1 in the semiconductor layer 14 by dry etching using chlorine gas. And the groove part 15b is formed. In this case, the groove 15b is formed to be parallel to the (10-10) plane (cleavage plane) of the crystal lattice 51 of the sapphire substrate 1, as shown in FIG. The crystal lattice 50 of the semiconductor layer 14 is formed in a state rotated by 30 degrees with respect to the crystal lattice 51 of the sapphire substrate 1.
[0043]
Then the first reference The first manufacturing process shown in FIG. reference The second has the same structure as the structure of the form 4 Reference The nitride-based semiconductor laser device having the above configuration is completed.
[0044]
First 4 Reference In the embodiment, as described above, when one groove 15b is formed so as to be parallel to the (10-10) plane (cleavage plane) of the crystal lattice 51 of the sapphire substrate 1, the sapphire substrate 1 is cleaved. In addition, a flat cleavage plane can be easily obtained by separating the elements along the groove 15b.
[0045]
The first 4 Reference Other effects, such as the warp reduction effect by the groove part 15a and the groove part 15b of a form, are 1st. reference It is the same as the form.
[0046]
(No. 5 Reference Form)
FIG. 18 shows the first of the present invention. 5 Reference It is a top view for demonstrating the manufacturing process of the semiconductor element (nitride-type semiconductor laser element) by a form. This first 5 Reference In the embodiment, an example in which one groove portion is formed so as to be parallel to the (10-10) plane (cleavage plane) of the crystal lattice of the semiconductor layer in the manufacturing process of the first embodiment will be described. First 5 Reference The other configuration of the form is the first reference It is the same as the form. Details will be described below.
[0047]
I.e. 5 Reference In the manufacturing process of the nitride-based semiconductor laser device according to the embodiment, the first process shown in FIGS. reference After the manufacturing process similar to that of the embodiment, in the step of forming the groove shown in FIG. 8, the groove 15 a having a depth reaching the surface of the sapphire substrate 1 in the semiconductor layer 14 by dry etching using chlorine gas. And the groove part 15b is formed. In this case, the groove 15b is formed to be parallel to the (10-10) plane (cleavage plane) of the crystal lattice 50 of the semiconductor layer 14, as shown in FIG. The crystal lattice 50 of the semiconductor layer 14 is formed in a state rotated by 30 degrees with respect to the crystal lattice 51 of the sapphire substrate 1.
[0048]
Then the first reference The first manufacturing process shown in FIG. reference The second has the same structure as the structure of the form 5 Reference The nitride-based semiconductor laser device having the above configuration is completed.
[0049]
First 5 Reference In the embodiment, as described above, the one groove portion 15b is formed so as to be parallel to the (10-10) plane (cleavage plane) of the crystal lattice 50 of the semiconductor layer 14, whereby the semiconductor layer 14 is cleaved by the element. In the case of separation, a flat cleavage surface can be easily obtained by separating the elements along the groove 15b. Moreover, since the flat cleavage surface can be used as it is as the resonance surface of the nitride-based semiconductor laser device, the device characteristics can be improved. In addition, since the shape defects can be reduced, the yield of the elements can be improved.
[0050]
The first 5 Reference Other effects, such as the warp reduction effect by the groove part 15a and the groove part 15b of a form, are 1st. reference It is the same as the form.
[0051]
The embodiment disclosed this time And reference form Is to be considered in all respects as illustrative and not restrictive. The scope of the present invention is the embodiment described above. And reference form It is shown not by the description of the invention but by the scope of claims for patent, and all modifications within the meaning and scope equivalent to the scope of claims for patent are included.
[0052]
For example, the above embodiment And reference form In the above, an example in which a nitride-based semiconductor layer is formed on a sapphire substrate has been described. However, the present invention is not limited thereto, and another semiconductor layer may be formed on another substrate. The present invention is particularly effective when a semiconductor layer made of a material having a lattice constant or a thermal expansion coefficient different from that of a substrate is grown on another insulating substrate such as a spinel substrate or a conductive substrate such as Si or GaAs. is there. MB ₂ (M is a metal element such as Al, Ti, Zr, Hf, V, Nb, Ta, Cr) A semiconductor layer made of a material having a lattice constant or a thermal expansion coefficient different from that of the substrate is formed on a boron compound substrate represented by Similar effects can be obtained even in the case of growth.
[0053]
In addition, the above embodiment And reference form In the above, an example in which a semiconductor laser element is formed on a substrate has been described. However, the present invention is not limited thereto, and another element may be formed on a substrate. For example, the same effect can be obtained even when a diode element is formed on a substrate.
[0054]
In addition, the above embodiment And reference form In the above, an example in which the groove portions are formed so as to be orthogonal to each other has been described. However, the present invention is not limited to this. A plurality of concentric grooves may be formed.
[0055]
[0056]
【The invention's effect】
As described above, according to the present invention, an element can be formed in a state where the warpage of the substrate is reduced, so that the element manufacturing process can be easily performed, and as a result, the yield of the element manufacturing process is improved. Can be made.
[Brief description of the drawings]
FIG. 1 shows the first of the present invention. reference It is the top view which showed the state before the element isolation | separation process of the semiconductor element (nitride-type semiconductor laser element) by a form.
FIG. 2 shows the first shown in FIG. reference It is the enlarged plan view which showed the element formation area of the semiconductor element (nitride-type semiconductor laser element) by a form.
FIG. 3 shows the first shown in FIG. reference It is the perspective view which showed the state after the element separation process of the semiconductor element (nitride type | system | group semiconductor laser element) by a form.
FIG. 4 reference It is sectional drawing for demonstrating the manufacturing process of the nitride type semiconductor laser element by a form.
FIG. 5 is a detailed cross-sectional view of a semiconductor layer in the step shown in FIG. 4;
FIG. 6 reference It is sectional drawing for demonstrating the manufacturing process of the nitride type semiconductor laser element by a form.
FIG. 7 reference It is sectional drawing for demonstrating the manufacturing process of the nitride type semiconductor laser element by a form.
FIG. 8 reference It is sectional drawing for demonstrating the manufacturing process of the nitride type semiconductor laser element by a form.
FIG. 9 shows the second of the present invention. reference It is the top view which showed the state before the element isolation | separation process of the semiconductor element (nitride-type semiconductor laser element) by a form.
10 is a second view shown in FIG. reference It is the enlarged plan view which showed the element formation area of the semiconductor element (nitride-type semiconductor laser element) by a form.
FIG. 11 1 It is sectional drawing for demonstrating the manufacturing process of the semiconductor element (nitride-type semiconductor laser element) by embodiment.
FIG. 12 1 It is sectional drawing for demonstrating the manufacturing process of the semiconductor element (nitride-type semiconductor laser element) by embodiment.
FIG. 13 shows the first of the present invention. 3 Reference It is the top view which showed the state before the element isolation | separation process of the semiconductor element (nitride-type semiconductor laser element) by a form.
FIG. 14 shows the first shown in FIG. 3 Reference It is the enlarged plan view which showed the element formation area of the semiconductor element (nitride-type semiconductor laser element) by a form.
FIG. 15 3 Reference It is sectional drawing for demonstrating the manufacturing process of the semiconductor element (nitride-type semiconductor laser element) by a form.
FIG. 16 3 Reference It is sectional drawing for demonstrating the manufacturing process of the semiconductor element (nitride-type semiconductor laser element) by a form.
FIG. 17 shows the first of the present invention. 4 Reference It is a top view for demonstrating the manufacturing process of the semiconductor element (nitride-type semiconductor laser element) by a form.
FIG. 18 shows the first of the present invention. 5 Reference It is a top view for demonstrating the manufacturing process of the semiconductor element (nitride-type semiconductor laser element) by a form.
[Explanation of symbols]
14 Semiconductor layer
15a, 15b, 25a, 25b, 45a, 45b Groove (groove)
30 Polyimide resin (resin)

Claims (4)

Forming a semiconductor layer on the substrate;
Forming a groove in the semiconductor layer that separates into a region where a plurality of elements are formed;
A step of forming the plurality of elements in the region surrounded by the trench to be separated;
Separating each of the plurality of elements in the region between the groove and the plurality of elements ,
A method for manufacturing a semiconductor element, further comprising a step of filling the groove with a polyimide resin after the step of forming the groove and before the step of forming the element. The step of forming the groove includes a step of forming the groove so as to be orthogonal,
2. The method of manufacturing a semiconductor device according to claim 1, wherein an interval between the grooves adjacent to each other in a first direction is equal to an interval between the grooves adjacent to a second direction orthogonal to the first direction. . Step includes a step of forming so as to reach the groove on the substrate, The method according to claim 1 or 2 to form the grooves. The step of forming the groove comprises forming the groove so as to be parallel to either one of the cleavage surface of the cleavage plane and the semiconductor layer of the substrate, to any one of claims 1 to 3 The manufacturing method of the semiconductor element of description.

Images