JP4076110B2 - Method for manufacturing composite semiconductor device - Google Patents

Method for manufacturing composite semiconductor device Download PDF

Info

Publication number
JP4076110B2
JP4076110B2 JP16184399A JP16184399A JP4076110B2 JP 4076110 B2 JP4076110 B2 JP 4076110B2 JP 16184399 A JP16184399 A JP 16184399A JP 16184399 A JP16184399 A JP 16184399A JP 4076110 B2 JP4076110 B2 JP 4076110B2
Authority
JP
Japan
Prior art keywords
storage container
metal heat
casing
heat sink
semiconductor storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP16184399A
Other languages
Japanese (ja)
Other versions
JP2000349105A (en
Inventor
永吾 福田
Original Assignee
日本インター株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本インター株式会社 filed Critical 日本インター株式会社
Priority to JP16184399A priority Critical patent/JP4076110B2/en
Publication of JP2000349105A publication Critical patent/JP2000349105A/en
Application granted granted Critical
Publication of JP4076110B2 publication Critical patent/JP4076110B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【0001】
本発明は、複合半導体装置の製造方法に係り、特に、金属放熱板の外周部に両端開口の絶縁ケースを嵌合させて形成された半導体収納容器を用いる複合半導体装置の製造方法に関するものである。
【0002】
【従来の技術】
複合半導体装置の組立工程に次のようなものがある。図2において、天地が反転して描かれている金属放熱板1上に絶縁基板2を介して半導体チップ、抵抗、IC等の電子部品3が搭載・固着されている。金属放熱板1の外周部には両端が開口した絶縁ケース4の一方の開口端が嵌合されるが、その絶縁ケース4の外周の内側段差部4aにその全周に亘って予め接着剤5が塗布される。
【0003】
次いで、電子部品3を搭載・固着させた金属放熱板1が図示のように反転された状態で絶縁ケース4の一方の開口端に嵌合されて半導体収納容器が形成される。
【0004】
次に、図示を省略したが、絶縁基板2上の導体パターンから外部導出端子が引き出され、次いで、絶縁ケース4の内部にコート剤が封入され、最後に該絶縁ケース4の上端開口部に蓋体(図示省略)が被せられ、複合半導体装置を完成する。
【0005】
【発明が解決しようとする課題】
上記の複合半導体装置の製造方法では、絶縁ケース4の一方開口端の段差部4aに予め接着剤を塗布する工程が必要であり、また、塗布する接着剤の量を均一にする必要があるなど、煩雑かつ手間のかかる工程を必要としていた。
また、塗布した接着剤の硬化時間も見込まなければならず、全体として複合半導体装置の製作に時間がかかっていた。
【0006】
【発明の目的】
本発明は上記のような課題を解決するためになされたもので、金属放熱板の外周部に両端開口の絶縁ケースの一方開口端を固着する工程と、絶縁基板に搭載した電子部品のコートをする工程を一工程で完了させ、全体として製作時間の短縮を図ると共に、煩雑で手間のかかる工程を省き製造原価の低減を図った複合半導体装置の製造方法を提供することを目的とするものである。
【0007】
【課題を解決するための手段】
請求項1に記載の発明によれば、金属放熱板(1)の外周部に両端開口の絶縁ケース(4)の一方の端部を嵌合させ、金属放熱板(1)の外周部と絶縁ケース(4)の一方の端部との嵌合部を接着することにより形成される半導体収納容器(17)を有する複合半導体装置の製造方法において、
熱板を備え、かつ、その熱板自体が回転する回転テーブル(12)上に半導体収納容器(17)を載置し、
半導体収納容器(17)を水平面内で回転させると共に、半導体収納容器(17)の内部に上方からケーシング剤(16)を滴下させ、絶縁ケース(4)と金属放熱板(1)との嵌合部に遠心力によりケーシング剤(16)を集め、加熱・硬化させて半導体収納容器(17)を形成することを特徴とする複合半導体装置の製造方法が提供される。
【0008】
請求項2に記載の発明によれば、金属放熱板(1)上に絶縁基板(2)を介して電子部品(3)を搭載・固着する工程と、
次いで、金属放熱板(1)の外周部に両端開口の絶縁ケース(4)の一方の端部を嵌合させる工程と、
次いで、金属放熱板(1)と絶縁ケース(4)とから形成される半導体収納容器(17)を、熱板を備え、かつ、その熱板自体が回転する回転テーブル(12)上に載置する工程と、
次いで、回転テーブル(12)を回転させると共に、絶縁ケース(4)の他方の開口端からケーシング剤(16)を滴下する工程と、を含み、
滴下されたケーシング剤(16)を硬化させ、金属放熱板(1)と絶縁ケース(4)との嵌合部を接着して半導体収納容器(17)を形成することを特徴とする複合半導体装置の製造方法が提供される。
【0009】
請求項3に記載の発明によれば、ケーシング剤(16)はシリコーンゴムからなることを特徴とする請求項1又は2に記載の複合半導体装置の製造方法が提供される。
【0010】
請求項4に記載の発明によれば、ケーシング剤(16)は、金属放熱板(1)上に搭載された電子部品(3)のコート剤を兼用する物質から構成されていることを特徴とする請求項2に記載の複合半導体装置の製造方法が提供される。
【0012】
【実施例】
以下に本発明の実施例を、図1を参照して説明する。
図において、10はこの発明に使用する回転テーブル装置の全体を示す。
この回転テーブル装置10は、駆動モータ11により水平面内で回転する熱板からなる回転テーブル12を有する。該回転テーブル12は電力供給部13を介して電力の供給を受けて所定の温度に加熱される。
14は制御部であり、上記の駆動モータ11の回転数及び時間、回転テーブル12の温度等種々の条件を設定できるようになっている。
【0013】
上記回転テーブル12の上方には、ケーシング剤を滴下させるためのディスペンサ装置(図示せず)のノズル15が設けてある。このノズル15は回転テーブル12の中心部から外周部まで往復動可能に設けられいる。
【0014】
次に、上記の回転テーブル装置10を使用して本発明の複合半導体装置の製造方法を説明する。まず、金属放熱板1上には絶縁基板2を介して電子部品3が搭載・固着されている。次に、金属放熱板1の外周部に、両端が開口された絶縁ケース4の一方の開口端(図示下方)に設けた段差部4aを嵌合させ半導体収納容器17を形成する。
【0015】
次に、上記半導体収納容器17を、金属放熱板1が回転テーブル12上の位置決め凸部12aに収まるように搭載する。なお、上記回転テーブル12は、回転テーブル装置10の制御部14により予め所定の温度まで昇温されている。
【0016】
次いで、駆動モータ11により回転テーブル12を回転させた後、該回転テーブル12の上方に設置したディスペンサ装置のノズル15から、例えばシリコーンゴムからなるケーシング剤16を滴下する。この滴下されたケーシング剤16は、金属放熱板1の外周方向に遠心力により拡散される。
拡散されたケーシング剤16は、絶縁ケース4の内壁と金属放熱板1の嵌合部に寄せ集まる。
また、ケーシング剤16の滴下量を制御することにより絶縁基板2上に搭載した電子部品3のコート剤の役割を果たさせることができる。
【0017】
次いで、図示を省略した外部導出端子を公知の方法で引出し、その後、従来と同様の工程を経て所定の複合半導体装置を完成させる。
なお、上記した工程の中で、ディスペンサ装置のノズル15の位置を、金属放熱板1の中心部ではなく、外周部近傍に位置させることにより絶縁ケース4と金属放熱板1との嵌合部に、より良くケーシング剤16を寄せ集めることができる。
【0018】
また、次工程で電子部品3に対して他のコート剤を塗布することによりケーシング剤とコート剤を必要に応じて使い分けることもできる。さらに上記した外部導出端子は、ケーシング剤塗布前の工程で予め、絶縁基板2の導体パターン上に半田付けしておいても良い。なお、上記の実施例ではケーシング剤としてシリコーンゴムを使用したが、他の材料でも良く、特に電子部品のコート剤を兼用する物質から構成するようにすることにより、ケーシングのための塗布工程とコート剤の塗布工程が一工程となって好ましい。
【0019】
【発明の効果】
以上説明したように本発明は、半導体収納容器を水平面内で回転させると共に、半導体収納容器の内部に上方からケーシング剤を滴下させ、絶縁ケースと金属放熱板との嵌合部に遠心力によりケーシング剤を集め、加熱・硬化させて半導体収納容器を形成するようにしたので、金属放熱板の外周部に両端開口の絶縁ケースの一方開口端を固着する工程と、絶縁基板に搭載した電子部品のコートを一工程で完了させることができ、全体として製作時間の短縮を図ることができると共に、煩雑で手間のかかる工程を省き製造原価の低減を図ることができる。
【図面の簡単な説明】
【図1】本発明の複合半導体装置の製造方法に使用する回転テーブル装置の概略構成図である。
【図2】従来の複合半導体装置に使用する半導体収納容器の形成方法を説明するための図である。
【符号の説明】
1 金属放熱板
2 絶縁基板
3 電子部品
4 絶縁ケース
10 回転テーブル装置
11 駆動モータ
12 回転テーブル
13 電力供給部
14 制御部
15 ノズル
16 ケーシング剤
17 半導体収納容器
[0001]
The present invention relates to a method for manufacturing a composite semiconductor device, and more particularly, to a method for manufacturing a composite semiconductor device using a semiconductor storage container formed by fitting an insulating case having openings at both ends to an outer peripheral portion of a metal heat sink. .
[0002]
[Prior art]
There are the following assembling processes of a composite semiconductor device. In FIG. 2, an electronic component 3 such as a semiconductor chip, a resistor, or an IC is mounted and fixed on a metal heat radiating plate 1 drawn upside down via an insulating substrate 2. While the outer peripheral portion of the metal heat sink plate 1 is fitted into one open end of the insulating case 4 in which both ends are open, pre-adhesive 5 over its entire periphery to the inner step portion 4a of the outer periphery of the insulating case 4 Is applied.
[0003]
Next, the metal heat dissipating plate 1 on which the electronic component 3 is mounted and fixed is fitted into one opening end of the insulating case 4 in an inverted state as shown in the figure, thereby forming a semiconductor storage container.
[0004]
Next, although not shown, an external lead-out terminal is drawn out from the conductor pattern on the insulating substrate 2, and then a coating agent is sealed inside the insulating case 4, and finally the upper end opening of the insulating case 4 is covered with a lid. A body (not shown) is put on to complete the composite semiconductor device.
[0005]
[Problems to be solved by the invention]
In the manufacturing method of the above composite semiconductor device, it is necessary to apply an adhesive in advance to the stepped portion 4a at the one opening end of the insulating case 4, and it is necessary to make the amount of the applied adhesive uniform. This requires a complicated and laborious process.
Moreover, the curing time of the applied adhesive must also be expected, and it takes a long time to manufacture the composite semiconductor device as a whole.
[0006]
OBJECT OF THE INVENTION
The present invention has been made to solve the above-described problems, and includes a step of fixing one opening end of an insulating case having both ends to the outer periphery of a metal heat sink, and a coating of an electronic component mounted on an insulating substrate. The purpose of the present invention is to provide a method for manufacturing a composite semiconductor device in which the manufacturing process is completed in one step, and the manufacturing time is reduced as a whole, and the manufacturing cost is reduced by omitting complicated and time-consuming processes. is there.
[0007]
[Means for Solving the Problems]
According to the first aspect of the present invention, one end portion of the insulating case (4) having both ends opened is fitted to the outer peripheral portion of the metal heat radiating plate (1) to be insulated from the outer peripheral portion of the metal heat radiating plate (1). In a method for manufacturing a composite semiconductor device having a semiconductor storage container (17) formed by adhering a fitting portion with one end of a case (4),
A semiconductor storage container (17) is placed on a rotary table (12) provided with a hot plate and the hot plate itself rotates,
The semiconductor container (17) is rotated in a horizontal plane, and the casing agent (16) is dropped from above into the semiconductor container (17) to fit the insulating case (4) and the metal heat sink (1). A method of manufacturing a composite semiconductor device is provided, in which a casing agent (16) is collected in a portion by centrifugal force, and heated and cured to form a semiconductor storage container (17).
[0008]
According to the invention described in claim 2, the step of mounting and fixing the electronic component (3) on the metal heat radiating plate (1) via the insulating substrate (2);
Next, a step of fitting one end of the insulating case (4) having both ends opened to the outer peripheral portion of the metal heat sink (1);
Next, the semiconductor storage container (17) formed of the metal heat radiating plate (1) and the insulating case (4) is placed on a rotary table (12) provided with a hot plate and rotating itself. And a process of
Then, rotating the rotary table (12) and dropping the casing agent (16) from the other open end of the insulating case (4),
A composite semiconductor device characterized in that the dropped casing agent (16) is cured and a fitting portion between the metal heat radiating plate (1) and the insulating case (4) is bonded to form a semiconductor storage container (17). A manufacturing method is provided.
[0009]
According to a third aspect of the present invention, there is provided the method for manufacturing a composite semiconductor device according to the first or second aspect, wherein the casing agent (16) is made of silicone rubber.
[0010]
According to invention of Claim 4, casing agent (16) is comprised from the substance which combines the coating agent of the electronic component (3) mounted on the metal heat sink (1), It is characterized by the above-mentioned. A method of manufacturing a composite semiconductor device according to claim 2 is provided.
[0012]
【Example】
Hereinafter, an embodiment of the present invention will be described with reference to FIG.
In the figure, reference numeral 10 denotes an entire rotary table device used in the present invention.
The turntable device 10 includes a turntable 12 made of a hot plate that is rotated in a horizontal plane by a drive motor 11. The turntable 12 is supplied with electric power via the electric power supply unit 13 and heated to a predetermined temperature.
Reference numeral 14 denotes a control unit which can set various conditions such as the rotational speed and time of the drive motor 11 and the temperature of the rotary table 12.
[0013]
Above the rotary table 12, a nozzle 15 of a dispenser device (not shown) for dropping the casing agent is provided. The nozzle 15 is provided so as to be able to reciprocate from the center to the outer periphery of the rotary table 12.
[0014]
Next, a method for manufacturing a composite semiconductor device according to the present invention using the rotary table device 10 will be described. First, an electronic component 3 is mounted and fixed on the metal heat sink 1 via an insulating substrate 2. Next, a stepped portion 4 a provided at one open end (lower side in the figure) of the insulating case 4 having both ends opened is fitted to the outer peripheral portion of the metal heat radiating plate 1 to form the semiconductor storage container 17.
[0015]
Next, the semiconductor storage container 17 is mounted so that the metal heat radiating plate 1 is accommodated in the positioning convex portion 12 a on the turntable 12. The turntable 12 is heated to a predetermined temperature by the control unit 14 of the turntable device 10 in advance.
[0016]
Next, after the rotary table 12 is rotated by the drive motor 11, a casing agent 16 made of, for example, silicone rubber is dropped from the nozzle 15 of the dispenser device installed above the rotary table 12. The dropped casing agent 16 is diffused by centrifugal force in the outer circumferential direction of the metal heat radiating plate 1.
The diffused casing agent 16 gathers at the fitting portion between the inner wall of the insulating case 4 and the metal heat sink 1.
Moreover, the role of the coating agent of the electronic component 3 mounted on the insulating substrate 2 can be fulfilled by controlling the dropping amount of the casing agent 16.
[0017]
Next, an external lead-out terminal (not shown) is drawn out by a known method, and then a predetermined composite semiconductor device is completed through steps similar to those in the prior art.
In addition, in the above-described process, the position of the nozzle 15 of the dispenser device is not located at the center of the metal heat radiating plate 1 but in the vicinity of the outer peripheral portion, so that the fitting portion between the insulating case 4 and the metal heat radiating plate 1 is located. The casing agent 16 can be collected better.
[0018]
It is also possible to use both optionally casing agent and coating agent by for the next step to the electronic component 3 is applied to other coating agents. Furthermore, the external lead-out terminals described above may be soldered onto the conductor pattern of the insulating substrate 2 in advance before the casing agent is applied. In the above embodiment, silicone rubber is used as the casing agent. However, other materials may be used, and in particular, a coating process for the casing can be achieved by using a material that also serves as a coating agent for the electronic component 3. The coating step of the coating agent is preferable as one step.
[0019]
【The invention's effect】
As described above, according to the present invention, the semiconductor storage container is rotated in a horizontal plane, and a casing agent is dropped into the semiconductor storage container from above, and the casing is formed by centrifugal force on the fitting portion between the insulating case and the metal heat sink. Since the agent is collected, heated and cured to form a semiconductor storage container, the step of fixing one open end of the insulating case at both ends to the outer peripheral portion of the metal heat sink, and the electronic component mounted on the insulating substrate The coating can be completed in one process, and the manufacturing time can be shortened as a whole, and the manufacturing cost can be reduced by omitting complicated and time-consuming processes.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of a rotary table device used in a method for manufacturing a composite semiconductor device of the present invention.
FIG. 2 is a diagram for explaining a method of forming a semiconductor storage container used in a conventional composite semiconductor device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Metal heat sink 2 Insulation board 3 Electronic component 4 Insulation case 10 Rotary table apparatus 11 Drive motor 12 Rotary table 13 Electric power supply part 14 Control part 15 Nozzle 16 Casing agent 17 Semiconductor storage container

Claims (4)

金属放熱板(1)の外周部に両端開口の絶縁ケース(4)の一方の端部を嵌合させ、金属放熱板(1)の外周部と絶縁ケース(4)の一方の端部との嵌合部を接着することにより形成される半導体収納容器(17)を有する複合半導体装置の製造方法において、
熱板を備え、かつ、その熱板自体が回転する回転テーブル(12)上に半導体収納容器(17)を載置し、
半導体収納容器(17)を水平面内で回転させると共に半導体収納容器(17)の内部に上方からケーシング剤(16)を滴下させ絶縁ケース(4)と金属放熱板(1)との嵌合部に遠心力によケーシング剤(16)を集め、加熱・硬化させ半導体収納容器(17)を形成することを特徴とする複合半導体装置の製造方法。
One end of the insulating case (4) with both ends opened is fitted to the outer peripheral part of the metal heat sink (1), and the outer peripheral part of the metal heat sink (1) and one end of the insulating case (4) In a method for manufacturing a composite semiconductor device having a semiconductor storage container (17) formed by adhering fitting portions,
A semiconductor storage container (17) is placed on a rotary table (12) provided with a hot plate and the hot plate itself rotates,
Is rotated in the semiconductor storage container (17) in a horizontal plane, fitting inside was dropped casing agent (16) from above the semiconductor storage container (17), and an insulating casing (4) metal heat sink plate (1) method for manufacturing a composite semiconductor device by Ri casing agent centrifugal force attracting (16), heating and cured, and forming a semiconductor storage container (17) in the section.
金属放熱板(1)上に絶縁基板(2)を介して電子部品(3)を搭載・固着する工程と、
次いで、金属放熱板(1)の外周部に両端開口の絶縁ケース(4)の一方の端部を嵌合させる工程と、
次いで、金属放熱板(1)と絶縁ケース(4)とから形成され半導体収納容器(17)、熱板を備え、かつ、その熱板自体が回転する回転テーブル(12)上に載置する工程と、
次いで回転テーブル(12)を回転させると共に絶縁ケース(4)の他方の開口端からケーシング剤(16)を滴下する工程と、を含み、
下されたケーシング剤(16)を硬化させ、金属放熱板(1)と絶縁ケース(4)との嵌合部を接着て半導体収納容器(17)を形成することを特徴とする複合半導体装置の製造方法。
Mounting and fixing the electronic component (3) on the metal heat sink (1) via the insulating substrate (2) ;
Next, a step of fitting one end of the insulating case (4) having both ends opened to the outer peripheral portion of the metal heat sink (1) ;
Then, placing the metal radiator plate (1) and Ru is formed from the insulating case (4) semiconductor storage container (17), with a heat plate, and, on the rotary table (12) to which the heating plate itself is rotated And a process of
Then, comprising rotates the rotary table (12), and a step of dropping the casing material (16) from the other open end of the insulating case (4),
Droplets Do casings agent (16) is cured, the composite semiconductor, characterized in that by adhering the fitting portion between the metal radiator plate (1) and an insulating casing (4) to form a semiconductor storage container (17) Device manufacturing method.
ケーシング剤(16)はシリコーンゴムからなることを特徴とする請求項1又は2に記載の複合半導体装置の製造方法。3. The method of manufacturing a composite semiconductor device according to claim 1, wherein the casing agent (16) is made of silicone rubber . ケーシング剤(16)は、金属放熱板(1)上に搭載された電子部品(3)のコート剤を兼用する物質から構成されていることを特徴とする請求項2に記載の複合半導体装置の製造方法。 3. The composite semiconductor device according to claim 2 , wherein the casing agent (16) is made of a material that also serves as a coating agent for the electronic component (3) mounted on the metal heat sink (1) . Production method.
JP16184399A 1999-06-09 1999-06-09 Method for manufacturing composite semiconductor device Expired - Fee Related JP4076110B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16184399A JP4076110B2 (en) 1999-06-09 1999-06-09 Method for manufacturing composite semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16184399A JP4076110B2 (en) 1999-06-09 1999-06-09 Method for manufacturing composite semiconductor device

Publications (2)

Publication Number Publication Date
JP2000349105A JP2000349105A (en) 2000-12-15
JP4076110B2 true JP4076110B2 (en) 2008-04-16

Family

ID=15743007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16184399A Expired - Fee Related JP4076110B2 (en) 1999-06-09 1999-06-09 Method for manufacturing composite semiconductor device

Country Status (1)

Country Link
JP (1) JP4076110B2 (en)

Also Published As

Publication number Publication date
JP2000349105A (en) 2000-12-15

Similar Documents

Publication Publication Date Title
TW495725B (en) Method of manufacturing COF package
CN106572607A (en) Process manufacturing method of solid-state microwave source
JP4076110B2 (en) Method for manufacturing composite semiconductor device
US6823580B2 (en) Method of producing a temperature-dependent switch with stamped-on adhesive layer
CN114247611B (en) Constant temperature gel spread gluey equipment
JP3013656B2 (en) Package assembly structure of resin-encapsulated semiconductor device
CN111952654A (en) Battery assembly and battery glue coating method thereof
JP2004273877A (en) Power module equipment, its manufacturing device and its manufacturing method
CN213023934U (en) Soft drying device of photoresist
JP2998484B2 (en) Lead frame for semiconductor device
JPH037950Y2 (en)
JPH1120358A (en) Apparatus and method for resin-sealing for semiconductor device for ic card
JPH0964077A (en) Method of manufacturing electronic component
JPH01133328A (en) Sealing of semiconductor element
JP2003101267A (en) Formation method for heat radiation film
TW200415759A (en) Package for semiconductor components and method for producing the same
JP4031385B2 (en) Electronic component mounting method
JPS629728Y2 (en)
JP3431031B2 (en) Thin battery for surface mounting and its surface mounting method
JP2732991B2 (en) Semiconductor device
JP2002042584A (en) Manufacturing method for resin window plate material with conductive printed layer
JPS6236197Y2 (en)
JP3012226U (en) Flat motor stator
JPH11121497A (en) Bga type semiconductor device and its manufacture
JPS598360A (en) Fabrication of glass-sealed semiconductor device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060512

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071121

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071225

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20071225

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080125

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080125

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110208

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110208

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140208

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees