JP4073235B2 - Plate for plasma processing equipment - Google Patents

Description

この結果からも明らかなように、側壁温度が低いほどカーボンリッチな膜質となっている。また、ここでは示していないが、Ｃ１ｓピークの分析から、側壁温度が低いほどカーボン同士の結合が進んでおり、ポリマー重合が進んでいることもわかっている。これが、マクロには緻密で強固な膜として観察されたと推測できる。
【００５３】
またこの実験時には、側壁面の温度は±１０℃以内の精度で制御されているので、膜の堆積中に温度変動にともなう内部応力が発生せず、膜構造が緻密になると予測される。電子顕微鏡による観察の結果、しっかりした層状の構造が形成されていることを確認した。この膜はきわめて緊密で強固であり、デポ堆積加速試験で試験的におよそ２００ミクロンの膜厚にまで堆積させても、テープ剥離や摩擦試験による膜のはがれは観察されなかった。さらに、この膜はプラズマに対しても高い耐性を示しており、プラズマ処理によっても膜表面の剥離や損傷がみられず、発塵の原因とはならないことを知見した。
【００５４】
このように、リアクタ内壁面の温度をウエハ温度よりも十分低い温度で一定に制御することで、内部に熱応力の発生しない強固な堆積膜をリアクタ側壁内面に形成することができる。この膜は十分な耐プラズマ性を有しており、反応生成物の剥離や試料表面へのパーティクルの付着が低減するので、リアクタ内壁の保護膜として作用する。したがって、側壁は消耗したり損傷したりしないので、側壁の部品交換の頻度が低減でき、ランニングコストの低下につながる。また、側壁が堆積膜で保護されるので、耐プラズマ性の高いＳｉＣなどのセラミクスを使う必要がなく、部品コストの低減が可能となる。また、特に側壁温度を常温〜約５０℃程度の範囲で制御すれば、側壁の加熱のためのエネルギーが少なくてすむので、省エネルギーにもつながる効果がある。側壁材料としては、重金属を含まずかつ熱伝導性のよい金属、たとえばアルミを用いればよい。
【００５５】
なお、堆積膜が存在しない初期状態では、アルミが露出しているために、プラズマからダメージを受けて表面が変質する可能性がある。そこでこれを防止するために、表面に高分子材料をコーティングしてもよい。あるいは、アルミ表面をたとえばアルマイト処理して、さらに、アルマイト処理で生じた微細な孔を高分子材料で封孔処理をしてもよい。もちろん、この封孔処理はアルミのアルマイト処理に限らずに適用できる。このように、高分子による膜をアルミ表面と堆積膜との界面に介在させることで、アルミ表面と堆積膜との密着性をまして、堆積膜を剥離させにくくする効果もある。また、プロセスによっては、膜が過剰に堆積する場合もありうるが、この場合は、ウエハ処理後に短時間のプラズマクリーニングを併用して膜の堆積を制御することで、膜の厚みを一定に保ってもよい。
【００５６】
次に、試料台リングについて説明する。すでに図1の実施例で説明したように、試料台リング１３２は、バイアス印加によりその表面での反応を制御することで、特にウエハ外周部でのエッチング特性を均一にできる。このとき、試料台リング１３２はバイアスにより加熱されるが、その表面における反応と膜の堆積を制御するために、印加バイアスと温度を制御する必要がある。しかも、静電吸着装置１３１を組込んだ下部電極に複雑な機構を組み込むことなく、印加バイアスならびに温度の制御が可能であることが望ましい。これは、漏洩バイアスの制御とバイアスによる加熱およびガス伝熱による冷却のバランスにより具現化できる。この実施例を、図２に示す下部電極１３０の断面図（右側半分）により説明する。
【００５７】
下部電極１３０は、試料Ｗを静電吸着装置１３１により保持する。静電吸着装置１３１は、絶縁体１３４によりアース１３５と絶縁される。本実施例では、試料台リング１３２を、静電吸着装置１３１に対して絶縁体１３３を介して設置することにより、バイアス電源１４１から供給されるバイアス電力の一部を漏洩させて加える構造としている。印加されるバイアスは、絶縁体１３３の厚みや材質により調整できる。このようなバイアス印加構造とすることにより、下部電極１３０の内部で試料台リング１３２への配線構造を設けたり、試料台リング１３２に別のバイアス電源を接続したりする必要がない。
【００５８】
また、静電吸着装置１３１は、温調用熱媒体の循環（図示していない）により、所定の温度に維持されている。そして、試料Ｗと静電吸着装置１３１の表面の間には、伝熱用ガス（例えばＨｅガス等）の流路１３６が形成され、伝熱用ガスが導入されることで熱伝導が良好に保たれる。ここで、本実施例では、試料台リング１３２、絶縁体１３３、静電吸着装置１３１の間にも伝熱用ガスの流路１３６Ａ、１３６Ｂが形成される。そして、ウエハ冷却用伝熱ガスの一部が導入されて、接触部での熱伝導が良好に保たれる。このため、試料台リング１３２は、所定の温度に維持された静電吸着装置１３１との間の熱伝達が良好に保たれて、温度が安定に保たれる。この結果、試料台リング１３２へのバイアス印加による温度変動が抑制され、試料台リング１３２における表面反応や試料の処理特性が安定化できる。また同時に、バイアスによる加熱とイオンアシストにより反応生成物の堆積が防止できるので、反応生成物の剥離や、試料表面へのパーティクルの付着が低減される。
【００５９】
このように、試料台リングは、漏洩バイアスの印加とバイアスによる加熱とガス伝熱による冷却のバランスにより、簡単な構造で表面反応や温度と膜堆積の制御が可能となり、処理の長期安定化と異物の低減を図ることができる。
【００６０】
なお、本実施例では、伝熱用ガスにより熱伝達を確保したが、たとえば熱導電性シートなど、他の熱伝達手段を用いてもよい。
【００６１】
次に、アンテナ１１０について説明する。すでに図1の実施例で述べたように、円板状導電体1１１にはアンテナ高周波電源１２２が接続されて100kHz程度または数MHzから10MHz程度のバイアスが印加される。また、円板状導電体1１１の温度は熱媒体により所定の値に維持される。したがって、円板状導電体1１１に接するプレート１１５は、バイアスが印加されるとともにその表面温度も制御される。プレート１１５はウエハと対向しているので、処理プロセスにもっとも大きく影響するが、この面にバイアスを印加して反応生成物を堆積させず、さらにプレートの材質に高純度のシリコンを用いてスカベンジ作用による表面反応を用いることで、プロセスを安定化することができる。
【００６２】
一方、プレート１１５の外周部のリング１１６は、プレート１１５と同様にアンテナ高周波電源１２２によるバイアスで加熱し、さらにリング１１６の熱容量を小さくすることで温度変化の応答性を高めている。これを図３を用いて説明する。
【００６３】
図３は、リング１１６の温度制御方法を示した実施例である。本実施例では、リング１１６の形状を薄くして、かつプレート１１５にその一部分がかかり、かつ誘電リング１１３やプレート１１５との熱的な接触が少なくなるように構成されている。この場合、プレート１１５にアンテナ高周波電力を印加すると、プレート１１５へのバイアスにより、イオンが図中の矢印のようにリング１１６の表面に引き込まれる。本実施例では、ヒータやランプなどの加熱機構を用いていないので、機構が複雑にならない利点がある。
【００６４】
リング１１６のバイアス印加部分の幅ｗは、バイアスによる加熱が効率よく行えるように、たとえば１０ｍｍ以上とする。リング１１６の厚みは、バイアスで有効に加熱されるためにはたとえば６ｍｍ以下、望ましくは４ｍｍ以下とする。このように薄い形状とすることで、リング１１６の熱容量が小さくなる。この結果、リング全体をおよそ１００℃以上２５０℃以下、望ましくは１５０℃以上２００℃以下に加熱することが可能となる。この結果、反応生成物の堆積が抑制されて、反応生成物の剥離にともなう異物発生を低減できる。また、この温度範囲では、およそ２５０℃以上の高温領域に比べて表面反応の変化が温度変化に対して敏感ではないので、構成部品の温度変動がプロセスに対して実質的に影響しないレベルに小さくできる利点がある。
【００６５】
リング１１６の厚みは、デポ膜の堆積を抑制でき、しかもリング表面がイオンでスパッタされて消耗しないように、アンテナバイアスのパワー・周波数、リング１１６の材質、リング１１６への反応生成物の堆積速度などとのバランスで決定される。また、図中に示したように、バイアスが印加される部分以外は厚みを薄くして、リング全体の熱容量をさらに小さくしてもよい。このように、リング１１６の熱容量を小さくすることで、処理の初期段階の短い時間で応答性よく温度が上昇するので、処理特性への影響が小さい。また、リング１１６の内径ｄは、試料の直径よりも大きいことが望ましい。リアクタの内径は試料の１．５倍程度になるから、試料径３００ｍｍの場合は、リングの幅ｓはおよそ５０ｍｍから７０ｍｍとなり、その表面積はリアクタ内壁面全体に対してたとえば２０％以下と十分に小さくなる。このように、部品の表面積を小さくすることで、温度や表面状態が変動してもプロセスへの影響を抑制できる。しかもリング１１６はウエハよりも外周部に位置しているので、そのプロセスへの影響はさらに小さくなる。
【００６６】
ところで、上記の実施例は、プラズマによる受動的な加熱であるため、ある程度の温度変動はさけられない。この変動は現状のプロセスでは影響が顕在化しなくても、処理プロセスの微細化により、エッチング特性に影響を及ぼす可能性があり、この場合にはランプやヒータなどによる積極的な温度制御機構が必要となる。図４には、ランプ加熱による温度制御機構の実施例を示す。
【００６７】
本実施例においては、誘電体リング１１３Ａの一部が、上記リング１１６と同様の構造１１６Ａでバイアスが印加できるように構成されており、さらに誘電体リング１１３Ａのプラズマに近い側に、赤外光・遠赤外光を吸収するたとえばアルミナ薄膜などの赤外吸収体１５１が形成されている。そして、赤外線放射手段１５２から赤外光・遠赤外光が放射され、赤外透過窓１５３、誘電体リング１１３Ａを通過して、赤外吸収体１５１で吸収され、リング１１６を加熱する。赤外吸収体１５１は赤外線により遠隔的に加熱できるので、赤外線吸収体１５１を誘電体リング１１３Ａのプラズマに近い側に設置することで、誘電体リング１２３のプラズマにさらされる表面の温度をより高精度に制御することが可能となる。また、加熱機構に赤外線の吸収を用いているため、発熱抵抗体による加熱に比べて応答性がよい利点がある。さらに、バイアス印加部１１６Ａにより、誘電体リング１１３Ａはバイアスによっても加熱されるので、温度の応答性が向上する。
【００６８】
一方、赤外線放射手段１５２はホルダ１５４に設置されるが、ホルダ１５４と誘電体リング１１３Ａの間には隙間が設けられ、その隙間にガス供給手段１５５を通して、温度制御用の伝熱ガスが供給される。伝熱ガスは、真空封止手段１５６Ａ、１５６Ｂで封止される。このガス伝熱により、誘電体リング１１３Ａはホルダ１５４を通して放熱される。したがって、たとえば処理開始時にはバイアスとランプにより加熱し、処理中にはガス伝熱により放熱させることで、温度制御の精度が向上する。この結果、誘電体リング１２３の温度をおよそ１００℃から２５０℃、望ましくは１５０℃から２００℃の範囲で±５〜１０℃程度の精度で制御できる。この温度では、膜の堆積が減少するため、膜の剥離による異物発生が抑制される。また、誘電体リング１１３Ａの表面状態が温度に対して依存性が大きくない領域であるので、表面状態が変化せず、長期的に安定したプラズマ処理が可能となる。
【００６９】
上記の図３、図４の実施例はいずれも、プラズマに接するリング１１６、誘電体リング１１３Ａを加熱して膜の堆積を減少させるものであったが、プラズマに接するリングを、図１で説明した側壁内面と同様に、ウエハ温度よりも低い温度に一定に制御して安定な堆積膜を形成することも可能である。図５は、この実施例を示し、誘電体リング１１３Ｂを、冷媒による温度制御で２０℃〜１００℃程度の範囲で制御するものである。
【００７０】
この実施例では、誘電体リング１１３Ｂに設けられた冷媒流路１６１に、熱媒体供給手段１６２から温度制御用の冷媒が供給される。冷媒は、封止手段１６３で封止される。誘電体リング１１３Ｂの温度は、図示していない温度コントローラや温度検出器により、所定の値に維持する。このような構成により、プラズマ処理時に、誘電体リング１１３Ｂの温度を２０℃〜１００℃程度の範囲に維持することができる。このため、誘電体リング１２３の表面に安定した強固な反応生成物の膜が堆積するので、誘電体リング１２３の表面が削られて消耗することはない。また、プロセスによって膜が過剰に堆積する場合は、プラズマクリーニングを併用して、膜を一定の厚みに保ってもよい。
【００７１】
なお、前記の各実施例は、いずれも有磁場UHF帯電磁波放射放電方式のプラズマ処理装置の場合であったが、放射される電磁波はUHF帯以外にも、たとえば2.45GHzのマイクロ波や、あるいは数10MHzから300MHz程度までのVHF帯でもよい。また、磁場はかならずしも必須ではなく、たとえば無磁場マイクロ波放電でもよい。さらに、上記以外にも、たとえば磁場を用いたマグネトロン型のプラズマ処理装置や平行平板型の容量結合方式プラズマ処理装置、あるいは誘導結合型のプラズマ処理装置などに、前記の各実施例を適用できる。
【００７２】
図６は、本発明を、磁場を用いたＲＩＥ装置（マグネトロンＲＩＥ装置やMagnetically Enhanced RIE装置）に適用した例である。真空容器としての処理室１００は、側壁１０２と、ウエハなどの試料Ｗを載置する下部電極１３０と、これに対向して接地される上部電極２０１を備え、また真空容器内に所定のガスを導入するガス供給手段１１７と、真空容器内を減圧排気する真空排気系１０６と、前記下部電極と上部電極の間に電界を発生させる電界発生手段２０３と、真空容器内に磁界を発生させる磁界発生手段２０２を備えている。磁界発生手段２０２は、複数の永久磁石またはコイルが処理室１００の外周にリング状に配置され、処理室内部に電極に対してほぼ平行な磁場を形成する。そして、電極間に発生する電界により処理ガスをプラズマ化して、プラズマＰを発生させ、試料Ｗを処理する。さらに、マグネトロンＲＩＥでは、磁界発生手段２０２により電界とほぼ直交する方向に磁場が形成されるので、電子とプラズマ中の分子・原子との衝突頻度が高まって、プラズマ密度が増加し、高いエッチング特性が得られる。
【００７３】
本実施例では、図１で述べた実施例と同様に、側壁１０２に側壁内面の温度を制御するジャケット１０３が交換可能に保持され、ジャケット１０３の内部に熱媒体供給手段１０４から熱媒体が循環供給されて、ジャケットの温度が０℃〜約１００℃、望ましくは２０℃〜約８０℃の範囲で、±１０℃以内の精度で制御される。ジャケット１０３は、たとえばアルマイト処理を施したアルミニウムで構成する。
【００７４】
このような構成により、リアクタ内壁面をウエハ温度よりも十分低い温度で一定に制御できるので、リアクタ側壁内面に強固な堆積膜を形成できる。この膜は十分な耐プラズマ性を有しており、リアクタ内壁の保護膜として作用し、反応生成物の剥離や試料表面へのパーティクルの付着が低減する。したがって、側壁は消耗したり損傷したりしないので、側壁の部品交換の頻度が低減でき、ランニングコストの低下につながるとともに、耐プラズマ性の高いＳｉＣなどのセラミクスを使う必要がなく、部品コストの低減が可能となる。
【００７５】
また、本実施例では、図１、図２で述べた実施例と同様に、試料台リング１３２に、電界発生手段２０３から供給されるバイアス電力の一部を漏洩させる構造とし、さらにガス伝熱により冷却することで、試料台リング１３２における表面反応や試料の処理特性が安定化できる。また同時に、バイアスによる加熱とイオンアシストにより反応生成物の堆積が防止できるので、反応生成物の剥離や試料表面へのパーティクルの付着が低減される。
【００７６】
図７は、本発明を、平行平板型プラズマ処理装置に適用した例である。真空容器としての処理室１００は、側壁１０２と、ウエハなどの試料Ｗを載置する下部電極１３０と、これに対向する上部電極２１０、および上部電極２１０に電力を供給して電極間に電界を発生させる電界発生手段２２１とを備えている。所定の処理ガスが処理室１００内にガス供給手段１１７より供給され、真空排気系１０６で真空容器内が減圧排気される。そして、電極間に発生する電界により処理ガスをプラズマ化して、プラズマＰを発生させ、試料Ｗを処理する。上部電極２１０は、電極板２１１が絶縁体２１２、２１３で絶縁されてハウジング２１４に保持される。また、電極板２１１のプラズマに接する側の面にはプレート２１５が、その外周にはシールドリング２１６が設置される。シールドリング２１６は、絶縁体２１２、２１３をプラズマから保護すると同時に、試料台リング１３２と対をなして、プラズマＰを処理室１００に封じ込めることでプラズマ密度を向上させて、高いエッチング特性を得る。
【００７７】
本実施例では、図１で述べた実施例と同様に、側壁１０２の内面の温度がジャケット１０３により０℃〜約１００℃、望ましくは２０℃〜約８０℃の範囲で、±１０℃以内の精度で制御されるため、耐プラズマ性を有する堆積膜が形成されてリアクタ内壁の保護膜として作用し、パーティクルの低減や側壁の部品交換の頻度の低減が可能となる。また、試料台リング１３２についても漏洩バイアス印加構造とガス冷却により、表面反応や試料の処理特性が安定化でき、反応生成物の堆積を防止してパーティクル発生が低減される。さらにシールドリング２１６は、図３の実施例と同様に、その形状が薄く、かつプレート１１５に対してシールドリング２１６の一部分がかかり、かつ他部品との熱的な接触が少なくなるように構成されている。このため、プレート１１５に電力を印加すると、シールドリング２１６がセルフバイアスによるイオンにより加熱され、反応生成物の堆積が抑制されて、異物発生を低減できる。
【００７８】
図８は、本発明を、誘導結合型のプラズマ処理装置に適用した例である。真空容器としての処理室１００は、側壁１０２と、ウエハなどの試料Ｗを載置する下部電極１３０と、天板２３０とを備えており、真空排気系１０６で減圧排気される。天板２３０の上部には、誘導放電用コイル２３１が配置され、高周波電源２３２から高周波電力を供給する。処理ガスはガス供給手段１１７より供給され、誘導放電用コイル２３１による誘導放電でプラズマ化されて、プラズマＰが発生し、試料Ｗを処理する。誘導結合型のプラズマ処理装置では、天板にシリコンを用いてプロセスを安定化させたり、たとえばファラデーシールドや磁場などの手段でプラズマと壁との相互作用を抑制することで、側壁をウエハよりも低温としても高いエッチング特性が安定して得られる。
【００７９】
本実施例では、図１で述べた実施例と同様に、側壁１０２の内面の温度がジャケット１０３により０℃〜約１００℃、望ましくは２０℃〜約８０℃の範囲で、±１０℃以内の精度で制御される。このため、耐プラズマ性を有する堆積膜が形成されてリアクタ内壁の保護膜として作用し、パーティクルの低減や側壁の部品交換の頻度の低減が可能となる。また、試料台リング１３２についても漏洩バイアス印加構造とガス冷却により、表面反応や試料の処理特性が安定化でき、反応生成物の堆積を防止してパーティクル発生が低減される。
【００８０】
なお、前記の各実施例は、いずれも処理対象が半導体ウエハであり、これに対するエッチング処理の場合であったが、本発明はこれに限らず、例えば処理対象が液晶基板の場合にも適用でき、また処理自体もエッチングに限らず、たとえばスパッタリングややＣＶＤ処理に対しても適用可能である。
【００８１】
【発明の効果】
本発明によれば、リアクタ内部の温度と壁面の状態を制御することにより、エッチング特性に経時的な変化を生じさせることなく、プロセスの再現性・信頼性を、長期間にわたって低コストで維持できるプラズマ処理装置を提供することができる。
【図面の簡単な説明】
【図１】本発明の一実施例になる、プラズマエッチング装置の断面模式図である。
【図２】本発明の一実施例である、試料台リングの温度制御方法を示す図である。
【図３】本発明の一実施例である、リングの温度制御方法を示す図である。
【図４】本発明の一実施例である、赤外ランプによるリングの温度の制御方法を示す図である。
【図５】本発明の一実施例である、冷媒によるリングの温度制御方法を示す図である。
【図６】本発明の一実施例になる、有磁場ＲＩＥプラズマエッチング装置の断面模式図である。
【図７】本発明の一実施例になる、平行平板型プラズマエッチング装置の断面模式図である。
【図８】本発明の一実施例になる、誘導結合型プラズマエッチング装置の断面模式図である。
【符号の説明】
１００…処理室、１０１…磁場形成手段、１０２…処理室側壁、１０３…ジャケット、１０４…ガス供給手段、１０５…真空室、１０６…真空排気系、１１０…アンテナ、１１０…円板状導電体、１１２…誘電体、１１３…誘電体リング、１１５…プレート、１１６…温度制御手段、１１７…ガス供給手段、１２１…アンテナ電源、１２２…アンテナ高周波電源、１３０…下部電極、１３１…静電吸着装置、１３２…試料台リング、１３３…絶縁体、１４１…バイアス電源、１５１…赤外吸収体、１５２…赤外線放射手段、１５３…赤外透過窓、１５５…ガス供給手段、１４２…静電吸着装置、１４３…絶縁体、１４７…冷媒流路。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing apparatus and a processing method, and more particularly to a plasma processing apparatus suitable for forming a fine pattern in a semiconductor manufacturing process.
[0002]
[Prior art]
In semiconductor manufacturing processes, plasma processing apparatuses are widely used in fine processing processes such as film formation, etching, and ashing. In the process by plasma processing, the process gas introduced into the vacuum chamber (reactor) is converted into plasma by the plasma generating means, reacted on the surface of the semiconductor wafer, finely processed, and volatile reaction products are exhausted. A predetermined process is performed.
[0003]
In this plasma processing process, the temperature of the reactor inner wall and wafer, or the deposition state of reaction products on the inner wall greatly affects the process. In addition, if the reaction product deposited inside the reactor is peeled off, it causes dust generation, leading to deterioration of device characteristics and a decrease in yield.
[0004]
For this reason, in the plasma processing apparatus, it is important to control the temperature inside the reactor and the deposition of reaction products on the surface in order to keep the process stable and suppress the generation of foreign substances.
[0005]
For example, Japanese Patent Laid-Open No. 8-144072 discloses that the temperature of each part in the reactor is 150 ° C. or higher and 300 ° C. or higher 300 ° C. higher than the temperature of the etching stage in order to improve the selectivity in the dry etching process of the silicon oxide film. A dry etching apparatus is described in which a high temperature value of less than or equal to ℃ (preferably between 200 and 250 ℃) is controlled and maintained with an accuracy within ± 5 ℃. By controlling the temperature of each part of the reactor inner surface to a high temperature in this way, the amount of plasma polymer adhered to the reactor inner surface decreases, the amount of plasma polymer deposited on the semiconductor wafer increases, and the selectivity ratio increases. improves.
[0006]
Japanese Patent Application Laid-Open No. 5-275385 discloses a reaction product generated by plasma processing in at least one of a clamp ring (target object holding means) and a focus ring (plasma concentration means) in a parallel plate type plasma processing apparatus. Describes an apparatus provided with heating means for raising and maintaining the temperature at a temperature at which no adhesion occurs. A resistance heating element is used as the heating means. Since adhesion of the reaction product can be prevented by heating, peeling of the reaction product and adhesion of particles on the surface of the object to be processed are reduced.
[0007]
[Problems to be solved by the invention]
As described above, in the plasma processing apparatus, it is important to control the temperature of the inner wall surface of the chamber and the deposition of reaction products on the inner wall surface.
[0008]
However, if the temperature of the inner wall surface of the chamber, particularly the side wall surface having a large area, is set to a high temperature of about 200 ° C. to 250 ° C. or more, the etching characteristics become very sensitive to the temperature of the inner wall surface, and process reproducibility and reliability are improved. There is a problem that it tends to decrease.
[0009]
For example, SC McNevin, et al., J. Vac. Sci. Technol. B 15 (2) Mar / Apr 1997, p. 21, 'Chemical challenge of submicron oxide etching' It has been shown that when the temperature is changed from 200 ° C. to 170 ° C., the oxide film etch rate increases by 5% or more. The reason for this is presumed that due to the decrease in the sidewall temperature, more carbon is adsorbed on the wall, the deposition of carbon on the wafer is reduced, and the oxide film etch rate is increased. In this way, particularly in high-density plasma, since the plasma interacts strongly with the reactor inner wall in a high temperature region, reaction product deposition on the inner wall surface and surface composition change rapidly due to changes in the temperature balance inside the reactor. This will appear as a change in etching characteristics.
[0010]
Furthermore, in the high temperature region, the interaction between the plasma and the inner wall becomes very sensitive to temperature changes. For example, when SiO2 is used as the inner wall material, a thermodynamic relationship between the etch rate of SiO2 due to F atoms and the wall temperature has been reported (DLFlamm, et al., J. Appl. Phys., 50, p.6211 (1979)), when this relational expression is applied to a temperature range of 150 ° C. or higher, the etch rate increases exponentially at a wall temperature of 200 ° C. to 250 ° C. or higher.
[0011]
Accordingly, in such a high temperature region, the temperature control is required to have a high accuracy, for example, within ± 5 ° C. However, since the inner wall surface is exposed to high-density plasma, it is not easy to control the temperature of the wall surface with high accuracy in such a high temperature region. In order to realize this, temperature detection means and heating means such as a heater and a lamp are used for temperature control. However, the temperature control mechanism / means are important. Furthermore, since reaction products are not deposited on the inner wall surface in such a high temperature region, the wall surface is etched and consumed by plasma. Therefore, it is necessary to periodically replace the parts on the inner wall surface, leading to an increase in the cost of consumables. Moreover, since large energy is required for heating, it is not preferable from the viewpoint of energy consumption.
[0012]
A similar problem applies to the heating of the wafer and the ring around the electrode. Although the reaction product can be prevented from adhering by heating the ring to raise the temperature, a heating mechanism such as a resistance heating element complicates the apparatus configuration. Further, even if the reaction product can be prevented from adhering, if the ring or inner wall surface is etched and consumed by plasma, the constituent material itself may become a new source of dust generation. Furthermore, when the ring and inner wall parts are consumed, it is necessary to replace them periodically, leading to an increase in the running cost of the apparatus.
[0013]
One method for solving these problems is to protect the inner wall surface of the chamber with a surface coating layer made of a polymer. For example, Japanese Patent Application Laid-Open No. 7-312363 describes a plasma etching apparatus in which a surface coating layer is formed on an inner wall surface of a chamber while maintaining the temperature of a support for a workpiece (workpiece) in a state higher than the wall surface of the chamber. Has been. The contaminant particles are captured and accumulated in the polymer film to reduce the residual accumulation of contaminants in the chamber due to reaction products.
[0014]
However, in this case, the purpose is not to protect the wall surface, but to capture contaminant particles. In addition, the temperature at which the surface coating layer is formed on the inner wall surface of the chamber is only described as a value that is 5 ° C. lower than the workpiece (workpiece), and the temperature range and control accuracy are considered. Has not been made. The pressure range is also a high pressure range of several hundred mtorr (several tens of Pa). However, it is estimated that the deposition temperature of the film changes the composition and quality of the film and affects the peel strength of the film and the generation of foreign matter. Further, the temperature fluctuation of the deposited film is predicted to cause cracks and peeling due to repeated thermal expansion and contraction, thereby causing foreign matters, and the accuracy of temperature control is an important factor. In addition, in the pressure range of several tens of mtorr or less (several Pa or less), it is considered that the film deposition state is different due to higher ion energy and longer mean free path of molecules. Furthermore, in the above known example, it is necessary to remove the coating layer containing the contaminant from the wall surface of the plasma processing chamber, which directly affects the throughput of the apparatus and the cost of consumables, but this point is not taken into consideration.
[0015]
The present invention has been made in order to solve the above-described problems. By controlling the temperature inside the reactor and the deposition of reaction products, the process can be reproduced without causing a change in etching characteristics over time. An object of the present invention is to provide a plasma processing apparatus capable of maintaining reliability and reliability over a long period of time and at a low cost.
[0016]
[Means for Solving the Problems]
As a result of intensive research on the above problems, the present inventors have determined that when the pressure in the reactor is in the region of several Pa or less, the temperature of the inner wall of the reactor is controlled to a temperature that is sufficiently lower than the wafer and constant. Furthermore, it has been found that a strong coating film is formed on the inner wall surface. As a result of further detailed analysis, this coating film has a more solid layered structure because the polymer polymerization progresses as the temperature during film formation decreases, and the temperature during film formation is controlled to be constant. Therefore, it was found that there was no peeling or damage of the film surface and no dust generation.
[0017]
In the above, the temperature of the reactor inner wall surface is “sufficiently lower than the wafer and constant” means that the temperature is within 5 ° C. or more, preferably 20 ° C. or more lower than the wafer, and is controlled within ± 10 ° C. Means. When the temperature during wafer processing is about 100 ° C. to 110 ° C., the temperature range means 100 ° C. or lower, preferably 80 ° C. or lower.
[0018]
On the other hand, inside the reactor, there are some parts or components that are difficult to control in the low temperature region as described above. As a result of studying such a place, the present inventors have found a method for controlling the temperature and deposition of reaction products on the surface without having a complicated heating mechanism such as a heating resistor. It came to.
[0019]
The present invention has been made based on the above knowledge, and holds a vacuum processing chamber, a plasma generator, a processing gas supply means for supplying a gas to the processing chamber, and a sample to be processed in the vacuum processing chamber. In the plasma processing apparatus having an electrode to perform and an evacuation system for depressurizing the vacuum processing chamber, the processing gas includes at least one gas having a composition such that a polymer film is formed by plasma discharge, and the processing chamber Then, the processing gas is converted into plasma by plasma discharge, and at least a part of the inner wall surface (or the surface of the internal component) in contact with the plasma inside the processing chamber is controlled to be constant at a temperature sufficiently lower than the sample. A strong polymer film is formed on the indoor wall surface.
[0020]
Another feature of the present invention is that the temperature of the inner wall surface on which the polymer film is formed is controlled with an accuracy within ± 10 ° C. within a range of 5 ° C. or more, preferably 20 ° C. or more lower than the sample. .
[0021]
Another feature of the present invention is that the temperature of the inner wall of the processing chamber for forming the polymerized film is controlled within a range of 0 ° C. to 100 ° C., preferably 20 ° C. to 80 ° C., with an accuracy of ± 10 ° C. There is to do.
[0022]
Another feature of the present invention is that the processing pressure in the processing chamber is 0.1 Pa to 10 Pa, preferably 0.5 Pa to 4 Pa.
[0023]
Another feature of the present invention resides in that a member constituting the processing chamber wall surface on which the polymerized film is formed can be easily replaced.
[0024]
Another feature of the present invention is that it includes a treatment process that suppresses the growth of the polymer film formed on the wall surface of the treatment chamber.
[0025]
Still another feature of the present invention is that a vacuum processing chamber, a plasma generator, a processing gas supply means for supplying a gas to the processing chamber, an electrode for holding a sample to be processed in the vacuum processing chamber, and the vacuum processing In a plasma processing apparatus having an evacuation system for depressurizing a chamber, a bias is applied to at least a part of the component (or inner wall surface) that contacts the plasma inside the processing chamber, and its heat capacity is sufficiently reduced. And it is in the structure to make the surface area small.
[0026]
Another feature of the present invention resides in that the temperature of the component in contact with the plasma inside the processing chamber is adjusted in the range of 100 ° C. or higher and 250 ° C. or lower, preferably 150 ° C. or higher and 200 ° C. or lower. The treatment pressure of the chamber is 0.1 Pa or more and 10 Pa or less, preferably 0.5 Pa or more and 4 Pa or less.
[0027]
Another feature of the present invention is that the shape of the inner wall component is a ring shape, and the surface area of the component in contact with plasma is 20% or less of the total area of the processing chamber wall.
[0028]
Another feature of the present invention is that the shape of the component that is in contact with the plasma inside the processing chamber and to which a bias is applied to at least a part thereof is a ring shape, the thickness is 6 mm or less, and the inner diameter is not less than the sample diameter. There is to be.
[0029]
According to still another aspect of the present invention, in the plasma processing apparatus, an infrared light absorber is formed in the vicinity of the side of the inner wall component that contacts the plasma, and the temperature of the component is infrared irradiation means. It is to be controlled remotely.
[0030]
Another feature of the present invention is that the temperature of the component controlled by infrared irradiation is controlled at an accuracy of ± 10 ° C. within a range of 100 ° C. to 250 ° C., preferably 150 ° C. to 200 ° C. There is to do.
[0031]
Still another feature of the present invention resides in that, in the above plasma processing apparatus, the plasma generation apparatus is a magnetic field UHF band electromagnetic wave radiation system.
[0032]
According to the present invention, a part of the processing gas is polymerized by plasma discharge, and a surface coating layer made of a polymer is formed on the part of the processing chamber wall surface in contact with the plasma or the surface of the part. By controlling the temperature of the inner wall of the reactor to a constant temperature sufficiently lower than that of the wafer, the polymer polymerization of the coating layer proceeds and a firm layered structure can be formed. Therefore, the inner wall surface is not etched and consumed by plasma, so that the frequency of replacement of parts on the inner wall surface can be reduced, and the running cost can be reduced. Further, since this coating layer has a close film composition, it does not cause peeling or damage on the surface even when exposed to plasma, and therefore does not cause dust generation.
[0033]
In addition, since the temperature of the inner wall surface of the chamber is set to a temperature region lower than that of the wafer, the interaction between the plasma and the inner wall surface is weaker than when the inner wall surface is set to a high temperature region of 200 ° C. or higher. Not sensitive to temperature changes. Therefore, process reproducibility and reliability are unlikely to deteriorate over a long period of time, and the accuracy of temperature control may be within ± 10 ° C., for example, and can be realized relatively easily without using a complicated mechanism for temperature control. It becomes possible.
[0034]
Further, when a polymerized film exceeding a predetermined value is formed on the inner wall surface, it is necessary to remove this film. Instead of cleaning this film removal process, the apparatus is opened to the atmosphere and the components on the wall surface of the processing chamber where the polymer film is formed are replaced and the apparatus is restarted. Reproducing the inner wall surface ex-situ has the effect of reducing the downtime of the apparatus and not reducing the throughput, and reducing the cost of consumables by regenerating and reusing parts. Further, by adding a process for suppressing the growth of the polymer film during the treatment, the time until the apparatus is opened and cleaned can be extended.
[0035]
On the other hand, according to still another aspect of the present invention, a structure in which a bias is applied to at least a part of a part or a component that is difficult to control temperature in a region sufficiently lower than the wafer is provided in the reactor. And by making the heat capacity of the whole part sufficiently small, the whole part can be controlled to a high temperature region without using a complicated mechanism such as a heater or a lamp, so that excessive deposition of reaction products is suppressed and the reaction products It is possible to reduce the generation of foreign matter due to peeling of the film. In addition, by reducing the surface area of the component, the influence on the process can be suppressed even if the temperature and the surface state fluctuate. Further, by adjusting the degree of bias applied to the above-described components and setting the temperature in the range of 100 ° C. or higher and 250 ° C. or lower, desirably 150 ° C. or higher and 200 ° C. or lower, a high temperature region of approximately 250 ° C. or higher. Compared to the case where the temperature is set to, the temperature is not sensitive to changes in temperature, so that there is an advantage that the temperature fluctuation of the component can be reduced to a level that does not substantially affect the process.
[0036]
According to still another aspect of the present invention, the temperature of the component in contact with the plasma in the processing chamber can be more actively controlled with high accuracy in the high temperature region by using infrared irradiation and gas heat transfer, so that the reaction is generated. Excessive accumulation of substances can be suppressed to reduce the generation of foreign substances accompanying the separation of reaction products, and the influence on the process can be suppressed by suppressing fluctuations in temperature and surface state. Furthermore, by controlling the temperature within a range of ± 10 ° C. within the range of 100 ° C. to 250 ° C., desirably 150 ° C. to 200 ° C., compared with a case where the temperature is set to a high temperature region of about 250 ° C. or higher, Since it is not sensitive to temperature changes, there is an advantage that the temperature fluctuations of the components can be reduced to a level that does not substantially affect even a finer process.
[0037]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 shows an embodiment in which the present invention is applied to a magnetic field UHF band electromagnetic wave radiation discharge type plasma etching apparatus, and is a schematic sectional view of the plasma etching apparatus.
[0038]
In FIG. 1, a processing chamber 100 is a vacuum container that can achieve a vacuum degree of about 10 −6 Torr, an antenna 110 that radiates electromagnetic waves as plasma generating means is provided in the upper part, and a sample W such as a wafer is provided in the lower part. Each of the lower electrodes 130 to be placed is provided. The antenna 110 and the lower electrode 130 are installed so as to face each other in parallel. Further, around the processing chamber 100, magnetic field forming means 101 including electromagnetic coils 101A and 101B and a yoke 101C is installed, and a magnetic field having a predetermined distribution and strength is formed. Then, due to the interaction between the electromagnetic wave radiated from the antenna 110 and the magnetic field formed by the magnetic field forming means 101, the processing gas introduced into the processing chamber is converted into plasma, generating plasma P, and processing the sample W. .
[0039]
A jacket 103 that controls the temperature of the inner surface of the side wall is replaceably held on the side wall 102 of the processing chamber 100. A heat medium is circulated and supplied from the heat medium supply means 104 into the jacket 103 to control the temperature. The temperature of the jacket is controlled within an accuracy of ± 10 ° C. within the range of 0 ° C. to 100 ° C., preferably 20 ° C. to 80 ° C. On the other hand, the processing chamber 100 is evacuated by an evacuation system 106 connected to the vacuum chamber 105, and the inside of the processing chamber 100 is adjusted to a predetermined processing pressure of 0.1 Pa to 10 Pa, preferably 0.5 Pa to 4 Pa. Is done. The processing chamber 100 and the vacuum chamber 105 are at ground potential. The sidewall 102 and the jacket 103 of the processing chamber 100 may be subjected to a surface treatment such as plasma-resistant alumite on the surface as a nonmagnetic metal material such as aluminum that does not contain heavy metals and has good thermal conductivity.
[0040]
An antenna 110 that radiates electromagnetic waves includes a disk-shaped conductor 111, a dielectric 112, and a dielectric ring 113, and is held by a housing 114 that is a part of a vacuum vessel. Further, a plate 115 is installed on the surface of the disk-shaped conductor 111 on the side in contact with plasma, and a ring 116 is installed on the outer periphery thereof. A processing gas for performing processing such as etching and film formation of the sample is supplied from the gas supply means 117 with a predetermined flow rate and a mixing ratio, and passes through a large number of holes provided in the disk-shaped conductor 111 and the plate 115. The distribution is controlled and supplied to the processing chamber 100.
[0041]
An antenna power source 121 and an antenna high-frequency power source 122 are connected to the disk-shaped conductor 111 through matching circuit / filter systems 123 and 124, respectively, and are connected to the ground through the filter 125. The antenna power supply 121 desirably supplies power of a UHF band frequency of 300 MHz to 900 MHz, and UHF band electromagnetic waves are radiated from the antenna 110. On the other hand, the antenna high-frequency power source 122 applies a bias of a low frequency of about 100 kHz or a high frequency of about several MHz to 10 MHz to the disk-shaped conductor 111, for example, to the plate 115 in contact with the disk-shaped conductor 111. Control the reaction at the surface. Since the plate 115 is opposed to the wafer, it has the greatest influence on the processing process. However, the apparatus process is stabilized by applying a bias to this surface and not depositing reaction products. In addition, for example, in oxide film etching using a CF-based gas, the material of the plate 115 is made of high-purity silicon, carbon, or the like, thereby controlling the reaction of F radicals and CFx radicals on the surface of the plate 115. To adjust the composition ratio of radicals. The distance between the lower surface of the plate 115 and the wafer W (hereinafter referred to as a gap) is 30 mm or more and 150 mm or less, preferably 50 mm or more and 120 mm or less.
[0042]
The temperature of the disk-shaped conductor 111 is maintained at a predetermined value by a temperature control means (not shown), that is, a heat medium circulating inside the disk-shaped conductor 111, and the surface temperature of the plate 115 in contact with the disk-shaped conductor 111 is controlled. The ring 116 is heated by a bias from the antenna high-frequency power source 122 and temperature controlled, which will be described in detail later.
[0043]
A lower electrode 130 is provided below the processing chamber 100 so as to face the antenna 110. A bias power supply 141 that supplies a bias power in the range of 400 kHz to 13.56 MHz is connected to the lower electrode 130 via a matching circuit / filter system 142 to control the bias applied to the sample W, and via the filter 143. Connected to ground.
[0044]
The lower electrode 130 mounts and holds a sample W such as a wafer on its upper surface, that is, the sample mounting surface, by the electrostatic chuck 131. The electrostatic adsorption device 131 has an electrostatic adsorption dielectric layer (hereinafter abbreviated as an electrostatic adsorption film) formed on the upper surface thereof. Then, a DC voltage of several hundreds to several kV is applied by a DC power supply 144 and a filter 145 for electrostatic adsorption, and a Coulomb force acting between the sample W and the electrostatic adsorption device 111 via the electrostatic adsorption film. And the sample W is adsorbed and held on the lower electrode 130. As the electrostatic adsorption film, for example, a dielectric material in which titanium oxide is mixed with aluminum oxide or aluminum oxide is used.
[0045]
Further, the surface temperature of the sample W is controlled to a predetermined temperature by temperature control means (not shown) in order to control the surface reaction. For this purpose, an inert gas, for example, He gas is supplied to the lower electrode 130 at a predetermined flow rate and pressure in order to improve heat transfer between the electrostatic adsorption device 131 and the sample W. . Thereby, the temperature of the wafer is controlled to a range of about 100 ° C. to 110 ° C. at the maximum.
[0046]
A sample stage ring 132 is provided on the outer side of the sample W on the upper surface of the electrostatic chuck 131. The sample stage ring 132 is made of ceramics such as SiC, carbon, silicon, or quartz material. The sample stage ring 132 is insulated from the electrostatic chuck 131 by an insulator 133 such as alumina. Further, by applying a part of the bias power from the bias power supply 141 to the sample stage ring 132 via the insulator 133, the bias application to the sample stage ring 132 is adjusted and the reaction on the surface is controlled. It is also possible to do. For example, in oxide film etching using a CF-based gas, if the material of the sample stage ring 132 is made of high-purity silicon, the reaction of F radicals and CFx radicals on the surface of the sample stage ring 132 is caused by the scavenging action of silicon. By adjusting, it is possible to improve the etching uniformity especially at the outer peripheral portion of the wafer. The sample stage ring 132 is heated by the bias and cooled by the heat transfer gas, and the temperature is controlled. This will be described in detail later.
[0047]
The plasma etching apparatus according to the present embodiment is configured as described above, and a specific process for etching a silicon oxide film, for example, using this plasma etching apparatus will be described with reference to FIG.
[0048]
First, a wafer W that is an object to be processed is loaded into the processing chamber 100 from a sample loading mechanism (not shown), and then placed and sucked onto the lower electrode 130. Then, the height of the lower electrode is adjusted as necessary to set a predetermined gap. Next, the processing chamber 100 is evacuated by the evacuation system 106. On the other hand, gases necessary for etching the sample W, such as C4F8 and Ar, are supplied from the gas supply means 117 to the processing chamber 100 from the plate 115 of the antenna 110 with a predetermined flow rate and mixing ratio, for example, an Ar flow rate of 300 sccm and a C4F8 flow rate of 9 sccm. To be supplied. At the same time, the processing chamber 100 is evacuated by the vacuum exhaust system 106, and the inside of the processing chamber 100 is adjusted to a predetermined processing pressure, for example, 1 Pa. On the other hand, the magnetic field forming unit 101 forms a magnetic field having a predetermined distribution and strength. Then, an electromagnetic wave in the UHF band is radiated from the antenna 110 by the antenna power source 121, and plasma P is generated in the processing chamber 100 by interaction with the magnetic field. By this plasma P, the processing gas is dissociated to generate ions and radicals, and the antenna high-frequency power source 122 and the bias power source 141 are controlled to perform processing such as etching on the wafer W. Then, along with the end of the etching process, the supply of electric power and processing gas is stopped to end the etching.
[0049]
Now, the plasma processing apparatus in the present embodiment is configured as described above, but the temperature control of each part in the reactor, particularly the inner surface of the side wall 103 and the ring 116, the sample stage ring 132, and the deposition control of the reaction product are specifically described. I will explain it.
[0050]
First, the side wall 103 will be described with reference to FIG. As already described, the jacket 103 is held inside the side wall 102 of the processing chamber 100, and the temperature can be controlled by the heat medium.
[0051]
The inventors of the present invention conducted an experiment at a pressure of 2 Pa using a mixed gas system of C4F8 and Ar as a processing gas for oxide film etching. As a result, the temperature of the reactor inner wall surface was sufficiently higher than the wafer temperature (about 100 ° C.). It has been found that when the temperature is controlled within a range of 25 ° C. to 80 ° C., which is a low temperature, with a precision within ± 10 ° C., a firm coating film is formed on the inner wall surface. In such a pressure range of several tens of mtorr or less (several Pa or less), ions with high energy increase, so that the effect of ion assist in film deposition is enhanced and a close film is formed. As for the state of the deposited film, a dense and strong film was formed when the sidewall temperature was low, and the structure was somewhat rough when the sidewall temperature was high. In order to clarify this film quality change quantitatively, the composition (element concentration ratio) of the films deposited at the sidewall temperatures of 25 ° C., 50 ° C., and 80 ° C. was analyzed by XPS (X-ray photoelectron spectroscopy). It was a result like this.
[0052]

As is apparent from this result, the film quality becomes richer as the side wall temperature is lower. Although not shown here, from the analysis of the C1s peak, it is known that the lower the side wall temperature is, the more carbon bonds are advanced and the polymer polymerization is advanced. It can be inferred that this was observed as a dense and strong film in the macro.
[0053]
In this experiment, since the temperature of the side wall surface is controlled with an accuracy within ± 10 ° C., it is predicted that internal stress due to temperature fluctuation does not occur during film deposition, and the film structure becomes dense. As a result of observation by an electron microscope, it was confirmed that a firm layered structure was formed. This film was extremely tight and strong, and even when it was experimentally deposited to a film thickness of about 200 microns in the deposition deposition acceleration test, no film peeling due to tape peeling or friction test was observed. Furthermore, it was found that this film is highly resistant to plasma, and that the film surface is not peeled off or damaged by plasma treatment and does not cause dust generation.
[0054]
Thus, by controlling the temperature of the inner wall of the reactor to be constant at a temperature sufficiently lower than the wafer temperature, a strong deposited film that does not generate thermal stress can be formed on the inner surface of the reactor side wall. This film has sufficient plasma resistance and acts as a protective film on the inner wall of the reactor because the separation of reaction products and the adhesion of particles to the sample surface are reduced. Therefore, since the side wall is not consumed or damaged, the frequency of replacement of the side wall parts can be reduced, leading to a reduction in running cost. Further, since the sidewall is protected by the deposited film, it is not necessary to use ceramics such as SiC having high plasma resistance, and it is possible to reduce the component cost. In particular, if the side wall temperature is controlled in the range of room temperature to about 50 ° C., energy for heating the side wall can be reduced, which leads to energy saving. As the sidewall material, a metal that does not contain heavy metal and has good thermal conductivity, such as aluminum, may be used.
[0055]
In the initial state where there is no deposited film, aluminum is exposed, so there is a possibility that the surface will be damaged due to damage from the plasma. Therefore, in order to prevent this, the surface may be coated with a polymer material. Alternatively, the aluminum surface may be subjected to, for example, alumite treatment, and fine holes generated by the alumite treatment may be further sealed with a polymer material. Of course, this sealing treatment is not limited to aluminum alumite treatment. Thus, by interposing the polymer film at the interface between the aluminum surface and the deposited film, the adhesion between the aluminum surface and the deposited film is improved, and the deposited film is hardly separated. Also, depending on the process, the film may be excessively deposited. In this case, the film thickness is kept constant by controlling the film deposition by using a short time plasma cleaning after the wafer processing. May be.
[0056]
Next, the sample stage ring will be described. As already described in the embodiment of FIG. 1, the sample stage ring 132 can make the etching characteristics uniform especially at the outer peripheral portion of the wafer by controlling the reaction on the surface by applying a bias. At this time, the sample stage ring 132 is heated by the bias. However, in order to control the reaction and film deposition on the surface, it is necessary to control the applied bias and temperature. In addition, it is desirable that the applied bias and temperature can be controlled without incorporating a complicated mechanism in the lower electrode incorporating the electrostatic chuck 131. This can be realized by balancing leakage bias control and heating by bias and cooling by gas heat transfer. This embodiment will be described with reference to a cross-sectional view (right half) of the lower electrode 130 shown in FIG.
[0057]
The lower electrode 130 holds the sample W by the electrostatic chuck 131. The electrostatic adsorption device 131 is insulated from the ground 135 by the insulator 134. In this embodiment, the sample stage ring 132 is installed on the electrostatic adsorption device 131 via the insulator 133 so that a part of the bias power supplied from the bias power supply 141 is leaked and applied. . The applied bias can be adjusted by the thickness and material of the insulator 133. With such a bias application structure, it is not necessary to provide a wiring structure to the sample stage ring 132 inside the lower electrode 130 or to connect another bias power source to the sample stage ring 132.
[0058]
In addition, the electrostatic adsorption device 131 is maintained at a predetermined temperature by circulation (not shown) of the temperature control heat medium. A flow path 136 of a heat transfer gas (for example, He gas) is formed between the sample W and the surface of the electrostatic adsorption device 131, and heat transfer gas is introduced to improve heat conduction. Kept. Here, in this embodiment, the heat transfer gas flow paths 136 </ b> A and 136 </ b> B are also formed between the sample stage ring 132, the insulator 133, and the electrostatic adsorption device 131. And a part of heat transfer gas for wafer cooling is introduced, and heat conduction in a contact part is maintained favorable. For this reason, the sample stage ring 132 maintains a stable temperature by maintaining good heat transfer with the electrostatic chuck 131 maintained at a predetermined temperature. As a result, temperature fluctuation due to bias application to the sample stage ring 132 is suppressed, and surface reaction and sample processing characteristics in the sample stage ring 132 can be stabilized. At the same time, the reaction product can be prevented from being deposited by heating with bias and ion assist, so that separation of the reaction product and adhesion of particles to the sample surface are reduced.
[0059]
In this way, the sample stage ring can control surface reaction, temperature, and film deposition with a simple structure by balancing the application of leakage bias, heating by bias, and cooling by gas heat transfer. Foreign matter can be reduced.
[0060]
In this embodiment, heat transfer is ensured by the heat transfer gas, but other heat transfer means such as a heat conductive sheet may be used.
[0061]
Next, the antenna 110 will be described. As already described in the embodiment of FIG. 1, an antenna high-frequency power source 122 is connected to the disk-shaped conductor 111 and a bias of about 100 kHz or several MHz to 10 MHz is applied. In addition, the temperature of the disk-shaped conductor 111 is maintained at a predetermined value by the heat medium. Therefore, a bias is applied to the plate 115 in contact with the disk-shaped conductor 111 and its surface temperature is also controlled. Since the plate 115 faces the wafer, it has the greatest influence on the processing process. However, no bias is applied to this surface to deposit reaction products, and the plate material is made of high-purity silicon and scavenging action. By using the surface reaction by, the process can be stabilized.
[0062]
On the other hand, the ring 116 at the outer peripheral portion of the plate 115 is heated by a bias from the antenna high-frequency power source 122 in the same manner as the plate 115, and the heat capacity of the ring 116 is further reduced to enhance the responsiveness to temperature changes. This will be described with reference to FIG.
[0063]
FIG. 3 is an embodiment showing a method for controlling the temperature of the ring 116. In this embodiment, the shape of the ring 116 is made thin, a part of the plate 115 is applied, and the thermal contact with the dielectric ring 113 and the plate 115 is reduced. In this case, when antenna high-frequency power is applied to the plate 115, ions are attracted to the surface of the ring 116 as indicated by an arrow in the figure by a bias to the plate 115. In the present embodiment, since a heating mechanism such as a heater or a lamp is not used, there is an advantage that the mechanism is not complicated.
[0064]
The width w of the bias application portion of the ring 116 is set to, for example, 10 mm or more so that heating by the bias can be performed efficiently. The thickness of the ring 116 is, for example, 6 mm or less, preferably 4 mm or less in order to be effectively heated by the bias. With such a thin shape, the heat capacity of the ring 116 is reduced. As a result, the entire ring can be heated to approximately 100 ° C. or more and 250 ° C. or less, desirably 150 ° C. or more and 200 ° C. or less. As a result, the deposition of the reaction product is suppressed, and the generation of foreign matter accompanying the separation of the reaction product can be reduced. Also, in this temperature range, the change in surface reaction is less sensitive to temperature changes than in the high temperature region of approximately 250 ° C. or higher, so that the temperature fluctuations of the components are small enough to have no substantial effect on the process. There are advantages you can do.
[0065]
The thickness of the ring 116 can suppress deposition of the deposition film, and the power and frequency of the antenna bias, the material of the ring 116, and the deposition rate of the reaction product on the ring 116 so that the ring surface is not sputtered by ions. It is decided by the balance with. Further, as shown in the figure, the thickness of the ring other than the portion to which the bias is applied may be reduced to further reduce the heat capacity of the entire ring. In this way, by reducing the heat capacity of the ring 116, the temperature rises with good responsiveness in a short time in the initial stage of processing, so that the influence on the processing characteristics is small. The inner diameter d of the ring 116 is desirably larger than the diameter of the sample. Since the inner diameter of the reactor is about 1.5 times that of the sample, when the sample diameter is 300 mm, the ring width s is about 50 mm to 70 mm, and the surface area is sufficiently less than 20% of the entire inner wall of the reactor, for example. Get smaller. Thus, by reducing the surface area of the component, the influence on the process can be suppressed even if the temperature and the surface state fluctuate. In addition, since the ring 116 is positioned on the outer peripheral portion of the wafer, the influence on the process is further reduced.
[0066]
By the way, since the above embodiment is passive heating by plasma, a certain temperature fluctuation cannot be avoided. Even if the effect of this variation does not become obvious in the current process, there is a possibility that the etching characteristics may be affected by miniaturization of the processing process. In this case, an active temperature control mechanism such as a lamp or a heater is required. It becomes. FIG. 4 shows an embodiment of a temperature control mechanism by lamp heating.
[0067]
In the present embodiment, a part of the dielectric ring 113A is configured to be able to apply a bias with the structure 116A similar to the ring 116, and further, infrared light is placed closer to the plasma side of the dielectric ring 113A. An infrared absorber 151 such as an alumina thin film that absorbs far infrared light is formed. Then, infrared light and far infrared light are radiated from the infrared radiation means 152, pass through the infrared transmission window 153 and the dielectric ring 113 </ b> A, and are absorbed by the infrared absorber 151 to heat the ring 116. Since the infrared absorber 151 can be remotely heated by infrared rays, the temperature of the surface of the dielectric ring 123 exposed to the plasma can be increased by installing the infrared absorber 151 on the side close to the plasma of the dielectric ring 113A. It becomes possible to control with accuracy. Further, since infrared absorption is used for the heating mechanism, there is an advantage that the responsiveness is better than the heating by the heating resistor. Further, since the dielectric ring 113A is also heated by the bias by the bias applying unit 116A, the temperature responsiveness is improved.
[0068]
On the other hand, the infrared radiation means 152 is installed in the holder 154, but a gap is provided between the holder 154 and the dielectric ring 113A, and heat transfer gas for temperature control is supplied to the gap through the gas supply means 155. The The heat transfer gas is sealed by the vacuum sealing means 156A and 156B. Due to this gas heat transfer, the dielectric ring 113A is radiated through the holder 154. Therefore, the accuracy of temperature control is improved, for example, by heating with a bias and a lamp at the start of processing and dissipating heat by gas heat transfer during processing. As a result, the temperature of the dielectric ring 123 can be controlled with an accuracy of about ± 5 to 10 ° C. in the range of about 100 ° C. to 250 ° C., preferably 150 ° C. to 200 ° C. At this temperature, deposition of the film is reduced, so that the generation of foreign matter due to film peeling is suppressed. In addition, since the surface state of the dielectric ring 113A is a region where the dependence on the temperature is not large, the surface state does not change, and stable plasma treatment can be performed for a long time.
[0069]
3 and FIG. 4 both heat the ring 116 in contact with the plasma and the dielectric ring 113A to reduce film deposition. The ring in contact with the plasma will be described with reference to FIG. Similarly to the inner surface of the side wall, it is possible to form a stable deposited film by constantly controlling the temperature lower than the wafer temperature. FIG. 5 shows this embodiment, in which the dielectric ring 113B is controlled in the range of about 20 ° C. to 100 ° C. by temperature control using a refrigerant.
[0070]
In this embodiment, the temperature control refrigerant is supplied from the heat medium supply means 162 to the refrigerant flow path 161 provided in the dielectric ring 113B. The refrigerant is sealed by the sealing means 163. The temperature of the dielectric ring 113B is maintained at a predetermined value by a temperature controller or a temperature detector (not shown). With such a configuration, the temperature of the dielectric ring 113B can be maintained in a range of about 20 ° C. to 100 ° C. during plasma processing. For this reason, since a stable and strong reaction product film is deposited on the surface of the dielectric ring 123, the surface of the dielectric ring 123 is not scraped and consumed. When the film is excessively deposited by the process, plasma cleaning may be used together to keep the film at a constant thickness.
[0071]
Each of the above examples was a case of a magnetic treatment UHF band electromagnetic wave radiation discharge type plasma processing apparatus, but the radiated electromagnetic waves other than the UHF band are, for example, 2.45 GHz microwaves, or The VHF band from several 10 MHz to about 300 MHz may be used. Further, the magnetic field is not always essential, and for example, a magneticless microwave discharge may be used. In addition to the above, the embodiments described above can be applied to, for example, a magnetron type plasma processing apparatus using a magnetic field, a parallel plate type capacitively coupled plasma processing apparatus, or an inductively coupled plasma processing apparatus.
[0072]
FIG. 6 shows an example in which the present invention is applied to an RIE apparatus (magnetron RIE apparatus or Magnetically Enhanced RIE apparatus) using a magnetic field. The processing chamber 100 as a vacuum vessel includes a side wall 102, a lower electrode 130 on which a sample W such as a wafer is placed, and an upper electrode 201 that is grounded so as to face the same, and a predetermined gas is introduced into the vacuum vessel. The gas supply means 117 to be introduced, the vacuum exhaust system 106 for evacuating the inside of the vacuum vessel, the electric field generating means 203 for generating an electric field between the lower electrode and the upper electrode, and the generation of a magnetic field for generating a magnetic field in the vacuum vessel Means 202 are provided. The magnetic field generating means 202 has a plurality of permanent magnets or coils arranged in a ring shape on the outer periphery of the processing chamber 100, and forms a magnetic field substantially parallel to the electrode in the processing chamber. Then, the processing gas is converted into plasma by the electric field generated between the electrodes, plasma P is generated, and the sample W is processed. Further, in the magnetron RIE, a magnetic field is formed in a direction substantially orthogonal to the electric field by the magnetic field generating means 202, so that the collision frequency between electrons and molecules / atoms in the plasma increases, plasma density increases, and high etching characteristics. Is obtained.
[0073]
In the present embodiment, as in the embodiment described with reference to FIG. 1, a jacket 103 that controls the temperature of the inner surface of the side wall is replaceably held on the side wall 102, and the heat medium is circulated from the heat medium supply means 104 inside the jacket 103. The jacket temperature is controlled within an accuracy of ± 10 ° C. within the range of 0 ° C. to about 100 ° C., preferably 20 ° C. to about 80 ° C. The jacket 103 is made of, for example, aluminum that has been anodized.
[0074]
With such a configuration, the inner wall surface of the reactor can be constantly controlled at a temperature sufficiently lower than the wafer temperature, so that a strong deposited film can be formed on the inner surface of the reactor side wall. This film has sufficient plasma resistance, and acts as a protective film for the inner wall of the reactor, thereby reducing reaction product separation and particle adhesion to the sample surface. Therefore, since the side wall is not consumed or damaged, the frequency of replacement of the side wall parts can be reduced, leading to a reduction in running cost, and there is no need to use ceramics such as SiC having high plasma resistance, thereby reducing the part cost. Is possible.
[0075]
In the present embodiment, similarly to the embodiment described with reference to FIGS. 1 and 2, the sample stage ring 132 has a structure in which part of the bias power supplied from the electric field generating means 203 is leaked. The surface reaction in the sample stage ring 132 and the processing characteristics of the sample can be stabilized by cooling by the above. At the same time, the deposition of the reaction product can be prevented by heating by bias and ion assist, so that the separation of the reaction product and the adhesion of particles to the sample surface are reduced.
[0076]
FIG. 7 shows an example in which the present invention is applied to a parallel plate type plasma processing apparatus. The processing chamber 100 as a vacuum vessel supplies power to the side wall 102, the lower electrode 130 on which the sample W such as a wafer is placed, the upper electrode 210 facing the upper electrode 210, and the upper electrode 210 to generate an electric field between the electrodes. Electric field generating means 221 to be generated. A predetermined processing gas is supplied into the processing chamber 100 from the gas supply means 117, and the vacuum chamber 106 is evacuated under reduced pressure by the vacuum exhaust system 106. Then, the processing gas is converted into plasma by the electric field generated between the electrodes, plasma P is generated, and the sample W is processed. The upper electrode 210 is held by the housing 214 with the electrode plate 211 insulated by insulators 212 and 213. A plate 215 is provided on the surface of the electrode plate 211 on the side in contact with the plasma, and a shield ring 216 is provided on the outer periphery thereof. The shield ring 216 protects the insulators 212 and 213 from the plasma, and at the same time forms a pair with the sample stage ring 132 to contain the plasma P in the processing chamber 100, thereby improving the plasma density and obtaining high etching characteristics.
[0077]
In this embodiment, as in the embodiment described with reference to FIG. 1, the temperature of the inner surface of the side wall 102 is within the range of ± 10 ° C. within the range of 0 ° C. to about 100 ° C., preferably 20 ° C. to about 80 ° C. Since it is controlled with accuracy, a deposited film having plasma resistance is formed and acts as a protective film on the inner wall of the reactor, and it becomes possible to reduce the number of particles and the frequency of replacement of side wall components. Also, the sample stage ring 132 can stabilize the surface reaction and sample processing characteristics by the leakage bias application structure and gas cooling, prevent the deposition of reaction products, and reduce the generation of particles. Further, like the embodiment of FIG. 3, the shield ring 216 has a thin shape, and a part of the shield ring 216 is applied to the plate 115, and the thermal contact with other parts is reduced. ing. For this reason, when electric power is applied to the plate 115, the shield ring 216 is heated by ions due to self-bias, the deposition of reaction products is suppressed, and foreign matter generation can be reduced.
[0078]
FIG. 8 shows an example in which the present invention is applied to an inductively coupled plasma processing apparatus. The processing chamber 100 as a vacuum container includes a side wall 102, a lower electrode 130 on which a sample W such as a wafer is placed, and a top plate 230, and is evacuated by a vacuum exhaust system 106. An induction discharge coil 231 is disposed on the top plate 230, and high frequency power is supplied from a high frequency power source 232. The processing gas is supplied from the gas supply means 117 and is converted into plasma by induction discharge by the induction discharge coil 231 to generate plasma P to process the sample W. In the inductively coupled plasma processing apparatus, silicon is used for the top plate to stabilize the process, or the interaction between the plasma and the wall is suppressed by means such as a Faraday shield or a magnetic field, so that the side wall is made smaller than the wafer. High etching characteristics can be stably obtained even at low temperatures.
[0079]
In this embodiment, as in the embodiment described with reference to FIG. 1, the temperature of the inner surface of the side wall 102 is within the range of ± 10 ° C. within the range of 0 ° C. to about 100 ° C., preferably 20 ° C. to about 80 ° C. Controlled with precision. For this reason, a deposited film having plasma resistance is formed and acts as a protective film for the inner wall of the reactor, and it becomes possible to reduce particles and the frequency of replacement of side wall components. Also, the sample stage ring 132 can stabilize the surface reaction and sample processing characteristics by the leakage bias application structure and gas cooling, prevent the deposition of reaction products, and reduce the generation of particles.
[0080]
In each of the above embodiments, the object to be processed is a semiconductor wafer and the etching process is performed on the semiconductor wafer. However, the present invention is not limited to this, and can be applied to the case where the object to be processed is, for example, a liquid crystal substrate. Further, the process itself is not limited to etching, and can be applied to, for example, sputtering or CVD process.
[0081]
【The invention's effect】
According to the present invention, the reproducibility and reliability of the process can be maintained at a low cost over a long period of time without causing a change with time in etching characteristics by controlling the temperature inside the reactor and the state of the wall surface. A plasma processing apparatus can be provided.
[Brief description of the drawings]
FIG. 1 is a schematic sectional view of a plasma etching apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram showing a temperature control method for a sample stage ring, which is an embodiment of the present invention.
FIG. 3 is a diagram showing a ring temperature control method according to an embodiment of the present invention.
FIG. 4 is a diagram illustrating a ring temperature control method using an infrared lamp according to an embodiment of the present invention.
FIG. 5 is a diagram illustrating a ring temperature control method using a refrigerant according to an embodiment of the present invention.
FIG. 6 is a schematic sectional view of a magnetic field RIE plasma etching apparatus according to an embodiment of the present invention.
FIG. 7 is a schematic sectional view of a parallel plate type plasma etching apparatus according to an embodiment of the present invention.
FIG. 8 is a schematic sectional view of an inductively coupled plasma etching apparatus according to an embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 100 ... Processing chamber, 101 ... Magnetic field formation means, 102 ... Processing chamber side wall, 103 ... Jacket, 104 ... Gas supply means, 105 ... Vacuum chamber, 106 ... Vacuum exhaust system, 110 ... Antenna, 110 ... Disc-shaped conductor, DESCRIPTION OF SYMBOLS 112 ... Dielectric material, 113 ... Dielectric ring, 115 ... Plate, 116 ... Temperature control means, 117 ... Gas supply means, 121 ... Antenna power supply, 122 ... Antenna high frequency power supply, 130 ... Lower electrode, 131 ... Electrostatic adsorption apparatus, 132 ... Sample stage ring, 133 ... Insulator, 141 ... Bias power supply, 151 ... Infrared absorber, 152 ... Infrared radiation means, 153 ... Infrared transmission window, 155 ... Gas supply means, 142 ... Electrostatic adsorption device, 143 ... insulator, 147 ... refrigerant flow path.

Claims (2)

A plasma processing apparatus having a vacuum processing chamber connected to a ground potential, a disk-shaped conductor provided at an upper portion of the vacuum processing chamber to which UHF band power is applied from a first power source; and the vacuum processing chamber A processing gas supply means for supplying a processing gas; an electrode having a sample mounting surface for holding a sample to be processed in the vacuum processing chamber; and a position facing the sample mounting surface and facing the plasma in the vacuum processing chamber. A plate disposed in contact with the disk-shaped conductor on the side not facing the plasma, and temperature control means for controlling the temperature of the plate to a predetermined value via the disk-shaped conductor, has a second power source for applying a high frequency bias power to said plate through said discoid conductor, and a vacuum exhaust system for reducing the pressure of the vacuum processing chamber, oxide film etching using a CF gas plasma processing to perform A plate that is needed use in location,
The plate is made of high-purity silicon or carbon, and has a large number of holes for introducing a processing gas supplied from the processing gas supply means into the vacuum processing chamber,
The plate is maintained at a predetermined value by Rutotomoni reaction on the surface facing the plasma is controlled by the high frequency bias applied from the second power source, the surface temperature of the plate is the temperature control means It is comprised in this way, The plate for plasma processing apparatuses characterized by the above-mentioned. A vacuum processing chamber connected to the ground potential, and a disk-shaped conductor provided at the upper portion of the vacuum processing chamber to which power is applied from the first high frequency power source for plasma generation and the second high frequency power source for bias A plasma generating apparatus, a processing gas supply means for supplying a processing gas to the vacuum processing chamber, an electrode having a sample mounting surface for holding a sample to be processed in the vacuum processing chamber, and the electrode in the vacuum processing chamber A plate which is disposed at a position facing the sample mounting surface and facing the plasma and is disposed in contact with the disk-shaped conductor on the side not facing the plasma; and a temperature of the plate via the disk-shaped conductor Temperature control means for controlling the bias to a predetermined value, the second high-frequency power supply for bias is applied to the plate via the disk-shaped conductor, and oxide film etching is performed using a CF-based gas. flops do A plate which need use in Zuma processor,
The plate is made of high-purity silicon or carbon, it has a number of holes for introducing a processing gas supplied to the vacuum processing chamber from the processing gas supply means,
The plate is maintained at a predetermined value by Rutotomoni reaction on the surface facing the plasma is controlled by the high frequency bias applied from the second power source, the surface temperature of the plate is the temperature control means It is comprised in this way, The plate for plasma processing apparatuses characterized by the above-mentioned.

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