JP4068049B2 - Bonding method - Google Patents

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JP4068049B2
JP4068049B2 JP2003405564A JP2003405564A JP4068049B2 JP 4068049 B2 JP4068049 B2 JP 4068049B2 JP 2003405564 A JP2003405564 A JP 2003405564A JP 2003405564 A JP2003405564 A JP 2003405564A JP 4068049 B2 JP4068049 B2 JP 4068049B2
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bonding
chip
capillary
wire
load
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JP2005167054A (en
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志信 石井
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Kaijo Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]

Description

本発明は、マルチ・チップ・パケージ（ＭＣＰ）やシステム・イン・パッケージ（ＳＩＰ）などでチップ等（以下、単にチップということがある。）がオーバーハング状態に形成され、そのボンディング部にワイヤボンダやバンプボンダをするときに、チップに撓みが発生するようなボンディング対象物に対するボンディング方法に関するものである。   In the present invention, a chip or the like (hereinafter simply referred to as a chip) is formed in an overhang state in a multi-chip package (MCP) or a system-in-package (SIP), and a wire bonder or The present invention relates to a bonding method for a bonding object in which bending is generated in a chip when bump bonding is performed.

チップ等がオーバーハング状態に形成されたパッケージ（以下、ワークということがある。）の場合でも、従来から、ボンディング部にワイヤボンダやバンプボンダをするとき、オーバーハングがない場合と同様、図示せぬ二次元方向に移動可能なＸＹテーブル上に載置されたボンディングツール（以下、キャピラリという。）を図５（ａ）〜（ｃ）及び図６のフローチャートに示すような工程によって行われている。   Even in the case of a package in which a chip or the like is formed in an overhang state (hereinafter, sometimes referred to as a workpiece), conventionally, when a wire bonder or a bump bonder is used in a bonding portion, as in the case where there is no overhang, two unillustrated A bonding tool (hereinafter referred to as a capillary) placed on an XY table that can move in the dimension direction is performed by the steps shown in FIGS. 5A to 5C and the flowchart of FIG.

通常、先ずキャピラリ１０をＺ軸（垂直軸）上のある所定の高さまで高速で降下させ、その地点を過ぎると、降下速度を減じて図６のステップＳ１に示すように、目的とするチップ２０のボンディング部２２に対してのＺ軸サーチ動作を開始する。
キャピラリ１０が、図５（ａ）に示すように、チップ２０のボンディング部２２に接触すると、すなわちワークタッチ（キャピラリがボンディング対象物であるワークに接触したこと）が検出されると（ステップＳ２）、キャピラリ１０の下降動作は停止する。 Usually, the capillary 10 is first lowered at a high speed to a predetermined height on the Z-axis (vertical axis), and after that point, the lowering speed is reduced and, as shown in step S1 of FIG. The Z-axis search operation for the bonding unit 22 is started.
As shown in FIG. 5A, when the capillary 10 comes into contact with the bonding portion 22 of the chip 20, that is, when a work touch (contact of the capillary with a work that is a bonding target) is detected (step S2). The descending operation of the capillary 10 is stopped.

次ぎに、キャピラリ１０の中に挿通されているワイヤ（図示を省略）の先端部をボンディング部２２に溶着（ボンディング）させるため、キャピラリ１０にボンディング荷重が印加される（ステップＳ３）。必要とする場合には、ステップＳ４に示すようにキャピラリ１０に超音波を伝達してワイヤの先端部に超音波を印加することも併用される。   Next, a bonding load is applied to the capillary 10 in order to weld (bond) the tip of a wire (not shown) inserted into the capillary 10 to the bonding part 22 (step S3). If necessary, transmitting ultrasonic waves to the capillary 10 and applying ultrasonic waves to the tip of the wire as shown in step S4 is also used.

そのときの、パッケージ１００の状態を図５（ｂ）に示す。キャピラリ１０のボンディング荷重によって、チップ２０のボンディング部２２は図に示すように撓み量ｈだけ撓んでいる。ワイヤの溶着が終了した後、キャピラリ１０に対し予め計算して設定された量ＨだけＺ軸上昇が行われる（ステップＳ５，Ｓ６）。図形的には図５（ｃ）に示すようになる。
この量Ｈは、ワイヤボンダの場合のループを形成するときの第１ボンディング部のワイヤの立ち上がり部分になり、またバンプボンダの場合にも同様にループの立ち上がり部分としてバンプボンダの大きさを決める部分となる。 The state of the package 100 at that time is shown in FIG. Due to the bonding load of the capillary 10, the bonding portion 22 of the chip 20 is bent by the bending amount h as shown in the figure. After the welding of the wire is completed, the Z-axis is raised by an amount H set in advance and calculated for the capillary 10 (steps S5 and S6). Graphically, it is as shown in FIG.
This amount H is a rising portion of the wire of the first bonding portion when forming a loop in the case of the wire bonder, and similarly becomes a portion that determines the size of the bump bonder as a rising portion of the loop in the case of the bump bonder.

以上の工程によるキャピラリ１０のＺ軸座標位置の動きとキャピラリ１０に荷重印加を行った時の状態の位置とを時間軸によって表したものを図７に示す。
図７に示すように、キャピラリ１０に荷重印加したときは、チップ２０が下方に撓んでキャピラリ１０の先端部がその分下がっていることがわかる。
なお、続いて行われる工程は、ここでは省略する。 FIG. 7 shows the movement of the Z-axis coordinate position of the capillary 10 by the above steps and the position of the state when a load is applied to the capillary 10 on the time axis.
As shown in FIG. 7, it can be seen that when a load is applied to the capillary 10, the tip 20 is bent downward and the tip of the capillary 10 is lowered accordingly.
The subsequent steps are omitted here.

上述したボンディングの工程で、ワークタッチを検出する方法としては、キャピラリの位置を近接センサでセンシングする方法やあるいはキャピラリを揺動させるボンディングアームにエンコーダを設置して制御部からのキャピラリの指令位置データとエンコーダからの現在位置データとの関係からワークタッチを検出する方法などがある（特許文献１参照）。   In the bonding process described above, the work touch can be detected by sensing the position of the capillary with a proximity sensor, or by installing an encoder on the bonding arm that swings the capillary, and the command position data of the capillary from the controller. There is a method of detecting a work touch based on the relationship between the current position data from the encoder and the current position (see Patent Document 1).

特許第２９５０７２４号公報Japanese Patent No. 2950724

ところで、パッケージ１００のチップ２０がオーバーハング状態に形成された部分にワイヤボンダやバンプボンダをする場合、図５（ｂ）に示すように、チップが撓んでしまうが、キャピラリをその撓んだ位置から所定の量、例えばＨ＝４０μｍ上昇させるとすると、撓んだ撓み量ｈ＝１０μｍとした場合に、実際のキャピラリの上昇はチップ２０が撓まない状態の位置から３０μｍ上昇したことになり、ワイヤは３０μｍ繰り出されたことになる。   By the way, when a wire bonder or a bump bonder is applied to a portion of the package 100 where the chip 20 is formed in an overhang state, the chip is bent as shown in FIG. , For example, if H = 40 μm, when the deflection amount h = 10 μm, the actual capillary rise is 30 μm from the position where the tip 20 is not bent, and the wire This means that 30 μm has been drawn out.

例えば、ボンディング部としてバンプが有り、その位置にループを形成したバンプボンダを行う場合に、チップ２０が撓まない場合には図８（ａ）に示すように、ワイヤループの立ち上がり長さが４０μｍとなるが、撓む場合には図８（ｂ）に示すように、３０μｍとなって、異なるループ形状となり問題の生じる可能性がある。
同様に、ワイヤボンダの場合にも、第１ボンディング位置においてワイヤの立ち上がり高さが予め定めた高さと異なると、ワイヤリングしていく際に問題が生じる場合がある。 For example, when a bump bonder having a bump as a bonding portion and a loop formed at that position is used and the chip 20 does not bend, the rising length of the wire loop is 40 μm as shown in FIG. However, in the case of bending, as shown in FIG. 8B, the thickness becomes 30 μm, which may cause a problem with a different loop shape.
Similarly, in the case of a wire bonder, if the rising height of the wire is different from a predetermined height at the first bonding position, there may be a problem in wiring.

本発明の課題は、パッケージのチップがオーバーハング状態に形成された部分にワイヤボンダやバンプボンダをする場合、予め定めたワイヤ長さのループを正確に形成するようなボンディング方法を提供することにある。   An object of the present invention is to provide a bonding method for accurately forming a loop having a predetermined wire length when a wire bonder or a bump bonder is formed in a portion where a chip of a package is formed in an overhang state.

上記課題を解決するために請求項１記載の発明は、チップ等がオーバーハング状態に形成され、該チップ等のボンディング部にワイヤボンダあるいはバンプボンダをするときにチップ等に撓みが生じる場合のボンディング方法であって、ワイヤを保持したボンディングツールを動作モードにより下降させ、チップ等のボンディング部にボンディングツールのタッチしたことが検出されると、ボンディングツールを荷重モードに切り換えて設定荷重印加によりワイヤの先端部をボンディング部に溶着させ、その後ボンディングツールへの荷重印加を前記設定荷重よりも軽荷重に切り換えて前記設定荷重の印加により下方に撓んでいたチップ等を元の位置に戻し、次ぎに動作モードにてボンディングツールを予め設定された量だけ上昇させるようにしたことを特徴としている。   In order to solve the above-mentioned problem, the invention according to claim 1 is a bonding method in which a chip or the like is formed in an overhang state, and the chip or the like is bent when a wire bonder or a bump bonder is formed on a bonding part of the chip or the like. When the bonding tool holding the wire is lowered in the operation mode and it is detected that the bonding tool touches the bonding part such as a chip, the bonding tool is switched to the load mode and the tip of the wire is applied by applying the set load. Then, the load applied to the bonding tool is switched to a lighter load than the set load, and the chip bent downward by applying the set load is returned to the original position, and then the operation mode is entered. To raise the bonding tool by a preset amount It is characterized in that the.

また、請求項２記載の発明は、チップ等がオーバーハング状態に形成され、チップ等のボンディング部にワイヤボンダあるいはバンプボンダをする際にチップ等に撓みを生じる場合のボンディング方法であって、
ワイヤを保持したボンディングツールを動作モードにより下降させ、チップ等のボンディング部にボンディングツールのタッチしたことが検出されるとその垂直方向であるＺ軸座標を記憶すると共に、ボンディングツールを荷重モードに切り換えて設定荷重印加によりワイヤの先端部をボンディング部に溶着させ、その後ボンディングツールを前記記憶させたＺ軸座標まで移動させ、次ぎに動作モードにてボンディングツールを予め設定された量だけ上昇させるようにしたことを特徴としている。 The invention according to claim 2 is a bonding method in which the chip or the like is formed in an overhang state, and the chip or the like is bent when the wire bonder or the bump bonder is bonded to the bonding part of the chip or the like.
The bonding tool holding the wire is lowered in the operation mode, and when it is detected that the bonding tool touches the bonding part such as a chip, the Z-axis coordinate in the vertical direction is stored and the bonding tool is switched to the load mode. By applying a set load, the tip of the wire is welded to the bonding part, and then the bonding tool is moved to the stored Z-axis coordinates, and then the bonding tool is raised by a preset amount in the operation mode. It is characterized by that.

本発明によれば、パッケージのオーバーハングした状態のチップ等にボンディングツールにより荷重印加してボンディングする場合、ボンディング中に撓んでいたチップ等を元の状態に戻してからツールのＺ軸上昇量を計算するため、チップの撓み量に関係なくＺ軸上昇量が安定し、ループ形成・バンプ形成時におけるボンディング品質の安定性の向上を図ることができる。   According to the present invention, when a bonding tool is used to apply a load to a chip or the like in an overhanging state of a package, the amount of Z-axis increase of the tool is reduced after returning the chip or the like bent during bonding to the original state. Since the calculation is performed, the amount of increase in the Z-axis is stable regardless of the amount of deflection of the chip, and the stability of bonding quality during loop formation / bump formation can be improved.

以下、本発明に係るボンディング方法の実施の形態について説明する。なお、背景技術の項で説明した部材と同一又は相当する部分には同一符号を付して説明する。   Hereinafter, embodiments of the bonding method according to the present invention will be described. In addition, the same code | symbol is attached | subjected and demonstrated to the part which is the same as that of the member demonstrated in the term of background art, or is corresponded.

図１、２、４を参照しながら、第一の実施の形態について説明する。
図示せぬ二次元方向に移動可能なＸＹテーブル上に載置されているキャピラリ１０を、Ｚ軸（垂直軸）上で所定の高さまで高速で降下させ、その地点を過ぎると、降下速度を減じて図２のステップＳ１１に示すように目的とするボンディング部に対してのＺ軸サーチ動作を開始する。
キャピラリ１０が、図１（ａ）に示すように、パッケージ１００のチップ２０のボンディング部２２に接触すると、すなわちワークタッチが検出されると（ステップＳ１２）、キャピラリ１０の下降動作は停止する。 The first embodiment will be described with reference to FIGS.
The capillary 10 placed on an XY table movable in a two-dimensional direction (not shown) is lowered at a high speed to a predetermined height on the Z axis (vertical axis), and after that point, the lowering speed is reduced. As shown in step S11 of FIG. 2, the Z-axis search operation for the target bonding portion is started.
As shown in FIG. 1A, when the capillary 10 comes into contact with the bonding portion 22 of the chip 20 of the package 100, that is, when a work touch is detected (step S12), the descending operation of the capillary 10 is stopped.

次ぎに、キャピラリ１０の中に挿通されているワイヤ（図示を省略）の先端部をボンディング部２２に溶着（ボンディング）させるため、キャピラリ１０にボンディング荷重が印加される（ステップＳ１３）。
必要とする場合には、ステップＳ１４に示すようにキャピラリ１０に超音波を伝達してワイヤの先端部に超音波を印加することも併用される。そのときの、パッケージ１００の状態を図１（ｂ）に示す。キャピラリ１０のボンディング荷重によって、チップ２０ボンディング部２２は図に示すように撓み量ｈだけ下方に撓んでいる。 Next, a bonding load is applied to the capillary 10 in order to weld (bond) the tip of a wire (not shown) inserted into the capillary 10 to the bonding part 22 (step S13).
If necessary, transmitting ultrasonic waves to the capillary 10 and applying ultrasonic waves to the tip of the wire as shown in step S14 is also used. The state of the package 100 at that time is shown in FIG. Due to the bonding load of the capillary 10, the chip 20 bonding portion 22 is bent downward by a bending amount h as shown in the figure.

超音波の印加が終了すると（ステップＳ１５）、キャピラリ１０に対する荷重を任意の値に軽減するとともに（ステップ１６）、所定の撓み戻り時間をおく（ステップ１７）。
この軽減する任意の荷重の値は、チップ２０の撓みが元の状態に戻る値とし、撓み戻り時間も実際の状態を見て任意に設定する。
軽荷重にしたときのパッケージ１００の状態を図１（ｃ）に示す。 When the application of ultrasonic waves is completed (step S15), the load on the capillary 10 is reduced to an arbitrary value (step 16), and a predetermined deflection return time is set (step 17).
The value of the arbitrary load to be reduced is a value at which the deflection of the chip 20 returns to the original state, and the deflection return time is also arbitrarily set by looking at the actual state.
FIG. 1C shows the state of the package 100 when the load is light.

チップ２０の撓みが元の状態に戻った後、キャピラリ１０に対し予め計算して設定された量ＨだけＺ軸上昇が行われる（ステップＳ１８，Ｓ１９）。図形的には図１（ｄ）に示すようになる。   After the deflection of the tip 20 returns to the original state, the Z-axis is raised by an amount H calculated and set in advance for the capillary 10 (steps S18 and S19). Graphically, it is as shown in FIG.

図４は、以上の工程によるキャピラリ１０のＺ軸座標位置を時間軸によって表したものである。
図４に示すように、キャピラリ１０に荷重印加したときは、チップ２０のボンディング部２２が下方に撓んでキャピラリ１０の先端部がその分下がり、超音波の印加が終了後、キャピラリの荷重を軽減すると、チップ２０の撓みが取れて元の状態に戻ることがわかる。
なお、続いて行われる工程は、ここでも省略する。 FIG. 4 shows the Z-axis coordinate position of the capillary 10 obtained by the above steps on the time axis.
As shown in FIG. 4, when a load is applied to the capillary 10, the bonding portion 22 of the chip 20 is bent downward and the tip of the capillary 10 is lowered accordingly, and after the application of ultrasonic waves is finished, the load on the capillary is reduced. Then, it can be seen that the chip 20 is bent and returns to the original state.
The subsequent steps are also omitted here.

次ぎに、図１、３、４を参照して、本発明の第二の実施の形態について説明する。
先ず、キャピラリ１０を、Ｚ軸（垂直軸）上で所定の高さまで高速で降下させ、その地点を過ぎると、降下速度を減じて図３のステップＳ２１に示すように目的とするボンディング部に対してのＺ軸サーチ動作を開始する。
キャピラリ１０が、図１（ａ）に示すように、チップ２０のボンディング部２２に接触すると、すなわちワークタッチが検出されると（ステップＳ２２）、キャピラリ１０の下降動作は停止する。このとき、図示を省略した制御部にてワークタッチ検出時のキャピラリ１０のＺ軸座標を記憶する（ステップ２３）。 Next, a second embodiment of the present invention will be described with reference to FIGS.
First, the capillary 10 is lowered at a high speed to a predetermined height on the Z axis (vertical axis), and when the point is passed, the lowering speed is reduced and the target bonding portion as shown in step S21 in FIG. All Z-axis search operations are started.
As shown in FIG. 1A, when the capillary 10 comes into contact with the bonding portion 22 of the chip 20, that is, when a work touch is detected (step S22), the descending operation of the capillary 10 is stopped. At this time, the Z axis coordinate of the capillary 10 at the time of workpiece touch detection is stored in a control unit (not shown) (step 23).

次ぎに、キャピラリ１０の中に挿通されているワイヤ（図示を省略）の先端部をボンディング部２２に溶着（ボンディング）するため、キャピラリ１０にボンディング荷重が印加される（ステップＳ２４）。必要とする場合には、ステップＳ２５に示すようにキャピラリ１０に超音波を伝達してワイヤの先端部に超音波を印加することも併用される。そのときの、パッケージ１００の状態を図１（ｂ）に示す。キャピラリ１０のボンディング荷重によって、チップ２０ボンディング部２２は図に示すように撓み量ｈだけ撓んでいる。   Next, a bonding load is applied to the capillary 10 in order to weld (bond) the tip of a wire (not shown) inserted into the capillary 10 to the bonding part 22 (step S24). If necessary, transmitting ultrasonic waves to the capillary 10 and applying ultrasonic waves to the tip of the wire as shown in step S25 is also used. The state of the package 100 at that time is shown in FIG. Due to the bonding load of the capillary 10, the chip 20 bonding portion 22 is bent by a bending amount h as shown in the figure.

超音波の印加が終了すると（ステップＳ２６）、キャピラリ１０をステップ２３で記憶したＺ軸座標まで戻す（ステップ２７）。このため、撓んでいたチップ２０は元の状態に戻る。このときのパッケージ１００の状態を図１（ｃ）に示す。   When the application of the ultrasonic wave is finished (step S26), the capillary 10 is returned to the Z-axis coordinate stored in step 23 (step 27). For this reason, the chip | tip 20 which was bent returns to the original state. The state of the package 100 at this time is shown in FIG.

チップ２０の撓みが元の状態に戻った後、キャピラリ１０に対し予め計算して設定された量ＨだけＺ軸上昇が行われる（ステップＳ２８，Ｓ２９）。そのときにパッケージ１００の状態を図１（ｄ）に示す。   After the deflection of the tip 20 returns to the original state, the Z-axis is raised by an amount H previously calculated and set for the capillary 10 (steps S28 and S29). At that time, the state of the package 100 is shown in FIG.

以上の工程を、キャピラリ１０のＺ軸座標位置の動きとキャピラリ１０に荷重印加を行った時の状態の位置及びその後の動作位置を時間軸で表したものが図４である。
図４に示すように、キャピラリ１０に荷重印加したときは、チップ２０のボンディング部２２が下方に撓んでキャピラリ１０の先端部がその分下がり、超音波の印加が終了後、キャピラリ１０をワークタッチした時点のＺ軸座標に戻すと、チップ２０の撓みが取れて元の状態に戻ることがわかる。
なお、この例でも、続いて行われる工程を省略する。 FIG. 4 shows the above process on the time axis showing the movement of the Z-axis coordinate position of the capillary 10, the position when the load is applied to the capillary 10, and the subsequent operation position.
As shown in FIG. 4, when a load is applied to the capillary 10, the bonding portion 22 of the chip 20 bends downward and the tip end portion of the capillary 10 is lowered by that amount. It can be seen that when the Z-axis coordinates at the time of return are restored, the chip 20 is deflected and returns to its original state.
In this example as well, subsequent steps are omitted.

本発明は、チップ等がオーバーハング状態に形成されたパッケージで、チップ等にワイヤボンダやバンプボンダをするときにチップ等に撓みが生じるような場合に、その不具合を是正するのに好適であり、半導体装置の製造装置のソフトとして利用可能性がある。   The present invention is a package in which a chip or the like is formed in an overhang state, and is suitable for correcting the defect when the chip or the like is bent when wire bonding or bump bonding is performed on the chip or the like. It may be used as software for device manufacturing equipment.

本発明に係るボンディング方法の実施の形態によるパッケージとボンディングツールとの位置関係を示す図である。It is a figure which shows the positional relationship of the package and bonding tool by embodiment of the bonding method which concerns on this invention. 本発明に係るボンディング方法の第一の実施の形態を示すフローチャートである。It is a flowchart which shows 1st embodiment of the bonding method which concerns on this invention. 本発明に係るボンディング方法の第二の実施の形態を示すフローチャートである。It is a flowchart which shows 2nd embodiment of the bonding method which concerns on this invention. 本発明に係るボンディング方法を実施した際のキャピラリの移動軌跡を時間軸によって表した図である。It is the figure which represented the movement locus | trajectory of the capillary at the time of implementing the bonding method based on this invention on the time axis. 従来のボンディング方法によるパッケージとボンディングツールとの位置関係を示す図である。It is a figure which shows the positional relationship of the package and bonding tool by the conventional bonding method. 従来のボンディング方法を示すフローチャートである。It is a flowchart which shows the conventional bonding method. 従来のボンディング方法を実施した際のキャピラリの移動軌跡を時間軸によって表した図である。It is the figure which represented the movement locus | trajectory of the capillary at the time of implementing the conventional bonding method with the time axis. 従来のボンディング方法による問題点を説明する図である。It is a figure explaining the problem by the conventional bonding method.

符号の説明Explanation of symbols

１０ キャピラリ
２０ チップ
２２ ボンディング部
１００ パッケージ（ワーク）
ｈ 撓み量
Ｈ ボンディングツールのＺ軸上昇量 10 Capillary 20 Chip 22 Bonding part 100 Package (work)
h Deflection amount H Z-axis rise amount of bonding tool

Claims (2)

チップ等がオーバーハング状態に形成され、該チップ等のボンディング部にワイヤボンダあるいはバンプボンダをするときにチップ等に撓みが生じる場合のボンディング方法であって、
ワイヤを保持したボンディングツールを動作モードにより下降させ、チップ等のボンディング部にボンディングツールのタッチしたことが検出されると、ボンディングツールを荷重モードに切り換えて設定荷重印加によりワイヤの先端部をボンディング部に溶着させ、その後ボンディングツールへの荷重印加を前記設定荷重よりも軽荷重に切り換えて前記設定荷重の印加により下方に撓んでいたチップ等を元の位置に戻し、次ぎに動作モードにてボンディングツールを予め設定された量だけ上昇させるようにしたことを特徴とするボンディング方法。 When a chip or the like is formed in an overhang state and the chip or the like is bent when a wire bonder or a bump bonder is bonded to the bonding part of the chip or the like,
When the bonding tool holding the wire is lowered in the operation mode and it is detected that the bonding tool has touched the bonding part such as a chip, the bonding tool is switched to the load mode, and the tip of the wire is bonded to the bonding part by applying the set load. After that, the load applied to the bonding tool is switched to a lighter load than the set load, the chip bent downward by applying the set load is returned to the original position, and then the bonding tool is operated in the operation mode. Is raised by a preset amount. チップ等がオーバーハング状態に形成され、該チップ等のボンディング部にワイヤボンダあるいはバンプボンダをする際にチップ等に撓みを生じる場合のボンディング方法であって、
ワイヤを保持したボンディングツールを動作モードにより下降させ、チップ等のボンディング部にボンディングツールのタッチしたことが検出されるとその垂直方向であるＺ軸座標を記憶すると共に、ボンディングツールを荷重モードに切り換えて設定荷重印加によりワイヤの先端部をボンディング部に溶着させ、その後ボンディングツールを前記記憶させたＺ軸座標まで移動させ、次ぎに動作モードにてボンディングツールを予め設定された量だけ上昇させるようにしたことを特徴とするボンディング方法。 A bonding method in which a chip or the like is formed in an overhang state, and the chip or the like is bent when a wire bonder or a bump bonder is bonded to the bonding part of the chip or the like,
The bonding tool holding the wire is lowered in the operation mode, and when it is detected that the bonding tool touches the bonding part such as a chip, the Z-axis coordinate in the vertical direction is stored and the bonding tool is switched to the load mode. By applying a set load, the tip of the wire is welded to the bonding part, and then the bonding tool is moved to the stored Z-axis coordinates, and then the bonding tool is raised by a preset amount in the operation mode. A bonding method characterized by that.
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