JP4062157B2 - Semiconductor module mounting structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor module mounting structure capable of closely adhering a semiconductor module to a closely adhering member without causing insufficient grease application and an excessive coated thickness, and without making a working process complicated. <P>SOLUTION: In the case where a heat conductive grease stays between a semiconductor module 1 exposing a radiation flat plane 11 and a heat receiving flat plane of a heat sink 3 closely adhered to the radiation flat plane 11, a grease extrusion groove 12 is radially provided in the radiation flat plane 11 (or the heat receiving flat plane of the heat sink 3) of the semiconductor module 1. Thereby, an excessive grease can be pushed out to the outside quickly. <P>COPYRIGHT: (C)2005,JPO&amp;NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor module mounting structure, and more particularly, to an improvement in a semiconductor module mounting structure in which a semiconductor chip or a semiconductor module is adhered to an adhesion member using thermally conductive grease.
[0002]
[Prior art]
When used for semiconductor chips or semiconductor modules, especially for power applications, it is usually closely attached to an adhesive member or joined by solder or the like in order to dissipate its heat by conduction. Since the surface has fine irregularities, it is usual to improve the thermal conductivity by applying grease with good thermal conductivity. Hereinafter, this mounting structure is also referred to as a grease application type semiconductor module contact structure.
[0003]
This grease-coated semiconductor module contact structure is used both when the semiconductor chip and the metal plate are in close contact, and when the metal plate of the semiconductor module in which the semiconductor chip and the metal plate are integrated is in close contact with an external metal body. It is possible to electrically insulate the metal plate of the semiconductor chip or the semiconductor module and the external metal body by performing this adhesion through a thin resin film. The grease may have electrical conductivity. When grease is used for bonding semiconductor chips, it is usually applied to the main surface of the semiconductor chip on the substrate side. A semiconductor module having a CSP (chip size package) structure can also be employed as an intermediate between the semiconductor chip and the semiconductor module. The metal member or semiconductor substrate to which the semiconductor chip or semiconductor module is coated with grease can also have an electrode function. The semiconductor module can have a plurality of semiconductor chips inside, and the semiconductor chip may have a single transistor or an integrated circuit. The semiconductor module may have a monolithic IC or a hybrid IC structure housed in a so-called ceramic package or resin package as long as it has a heat radiation plane that radiates heat through grease. This type of semiconductor module is used in a very wide range of fields such as CPUs, power transistors, and high-speed LSIs. As the close contact member, a metal member or a resin film is preferable. The heat conductive grease may be mixed with, for example, silver powder or copper powder in order to have electric conductivity or to improve heat conductivity. Therefore, the present invention to be described later can also be employed for these grease-coated semiconductor module contact structures.
[0004]
Patent document 1 shows the inverter apparatus which has the grease application type semiconductor module contact | adherence structure which becomes the application of this applicant.
[0005]
[Patent Document 1]
Japanese Patent Laid-Open No. 13-308263 [0006]
[Problems to be solved by the invention]
However, the above-described conventional grease application type semiconductor module contact structure has the following problems. That is, it is necessary to make the grease coating thickness as thin as possible within a range in which fine unevenness on the coated surface is filled and warpage of the two coated surfaces can be compensated for heat conduction.
[0007]
In the manufacturing process of the grease-coated semiconductor module contact structure, thermal conductivity is applied to one or both of the contact surface of the semiconductor chip or the semiconductor module (hereinafter, the semiconductor module is a concept including the semiconductor chip) and the contact surface of the contact member. Grease is applied, both sides are brought into close contact, and pressure is applied to expel excess grease, making the grease thickness as thin as possible.
[0008]
However, the portion of the excess grease that is present at the center of the contact surface must be pushed out to the edge of the contact surface, which is not simple, and the excess grease that can be extruded by any means remains. There was a problem of lowering the heat dissipation. If the amount of grease applied is reduced so that excessive grease does not occur from the beginning, good thermal conductivity cannot be ensured if the unevenness or warpage is large. On the contrary, if the grease coating thickness is too large, bubbles may be generated due to deterioration of thermal conductivity.
[0009]
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and a semiconductor capable of bringing a semiconductor module and a close contact member into close contact with each other without causing insufficient grease application and excessive coating thickness and without complicating the work process. Its purpose is to provide a module mounting structure.
[0010]
[Means for Solving the Problems ]
[0011]
The semiconductor module structure of the present invention includes a semiconductor module in which a heat dissipation plane, which is a heat dissipation plane, is exposed and a plurality of semiconductor elements are embedded, and a heat receiving plane that is in close contact with the heat dissipation plane, and the heat receiving plane is received from the heat dissipation plane. A semiconductor module mounting structure comprising a plate-like, block-like, or film-like contact member that absorbs heat from the semiconductor module through a plane, and grease interposed between the two planes. a electrode plate, wherein the plurality of semiconductor elements are connected together with an exposed surface forming a plane (3), the heat dissipating flat surface is located only in a region other than the region portion that overlaps in the thickness direction of the semiconductor element and located between at least the plurality of semiconductor elements, that it has a grease extrusion grooves reaching the edge of the semiconductor module It is a feature.
[0012]
In the present invention, the electrode plate (3) that connects a plurality of semiconductor elements and whose exposed surface forms a heat radiation plane does not overlap each semiconductor element in the thickness direction (hereinafter also referred to as a heat transfer area outside the elements). And at least between a plurality of semiconductors, and has a narrow groove grease extrusion groove reaching the edge of the heat transfer region outside the element .
Thus, better to the outside through the groove excess and became grease at the center of the contact area in which the heat receiving plane that contacts the heat radiating plane to the radiating plane is in contact (adjacent in the thickness direction in the semi-conductor element) Can be extruded. As a result, sufficient grease can be applied without dripping the excess grease remaining in the center of the contact area, and thereafter, the excess grease is quickly pushed out to the outside without applying a long time or strong pressure. And excellent heat dissipation of the semiconductor module can be obtained. In addition, since the grease extrusion groove is disposed outside the portion on which the semiconductor element is mounted, it is possible to prevent a decrease in heat transfer performance from the heat radiation plane to the heat receiving plane due to the presence of this grease extrusion groove, A necessary amount of a semiconductor element protecting member (for example, a resin member) can be arranged around the semiconductor element.
[0015]
The semiconductor module mounting structure of the third invention has a semiconductor module in which a heat radiation plane, which is a heat radiation plane, is exposed and a plurality of semiconductor elements are embedded, and a heat receiving plane that is in close contact with the heat radiation plane, from the heat radiation plane. In a semiconductor module mounting structure comprising a plate-like, block-like, or film-like contact member that absorbs heat from the semiconductor module through the heat receiving plane, and grease interposed between the two planes.
The resin plate has a resin plane that is essentially the same plane as the heat dissipation plane, and the semiconductor module is embedded while exposing the heat dissipation plane, and the resin plate is at an edge of the heat dissipation plane. It is characterized by having a grease push-out groove which is provided close to the resin plane or the resin plane and accumulates at least the grease, and reaches the edge of the resin plate portion and allows excess grease to escape.
[0018]
In a preferred aspect, the grease extrusion groove is formed in a thickness direction of the semiconductor element on a metal plate (17) interposed between the semiconductor element and the electrode plate (3) as a mounting portion of the semiconductor element. The edge of the semiconductor module is reached at a position where it does not overlap.
[0020]
BEST MODE FOR CARRYING OUT THE INVENTION
Will be described with reference to the drawings actual施例semiconductor module mounting structure of the present invention. Semiconductor module mounting structure of the present invention are applied to greasing implementation of semi-conductor module circuit element multiple is formed that is bonded to the outside of the heat sink (cooling metal member) or wiring metal member.
( Reference Example 1)
The semiconductor module mounting structure of Reference Example 1 will be described with reference to FIG. FIG. 1 is a side view of the semiconductor module mounting structure.
[0021]
Reference numeral 1 denotes a thin plate-like semiconductor module having a semiconductor die (semiconductor chip) 10 incorporated therein as shown in FIG. A heat-dissipating metal plate (which may also serve as an electrode) (not shown) is exposed on the upper surface 11 of the semiconductor module 1 over substantially the entire upper surface 11 of the semiconductor module 1 (or may be partially). When the metal plate for heat radiation is exposed in a partial region of the upper surface 11 of the semiconductor module 1, the remaining region of the upper surface 11 of the semiconductor module 1 is flush with the upper surface (heat radiation plane) of the metal plate for heat radiation. It may be formed so that it may become, and may be formed with a level difference.
[0022]
Reference numeral 2 denotes a wiring substrate that is a resin substrate or a ceramic substrate having one to a plurality of wiring layers, but may be a metal plate that forms a wiring member. When the wiring board 2 is a metal plate, a heat-dissipating metal plate (which may also serve as an electrode) is exposed on the lower surface of the semiconductor module 1, and the heat-dissipating metal plate is bonded or closely attached to the wiring board. Also good. The metal plate for heat dissipation exposed on the lower surface of the semiconductor module 1 may be exposed over the entire lower surface of the semiconductor module 1 or may be partially exposed. When the metal plate for heat radiation exposed on the lower surface of the semiconductor module 1 is in close contact with the wiring substrate 2 made of a metal plate, an electrical insulating film may be interposed between the wiring substrate 2 and the semiconductor module 1.
[0023]
Reference numeral 3 denotes an aluminum or copper block heat sink whose lower surface is in close contact with the upper surface (heat radiation plane) of the heat radiating metal plate exposed on the upper surface 11 of the semiconductor module 1. Of the lower surface of the heat sink 3, a surface region that is in close contact with the upper surface (heat radiation plane) of the heat radiating metal plate is referred to as a heat receiving plane. An insulating film may be interposed between the lower surface of the heat sink 3 and the upper surface of the semiconductor module 1.
[0024]
In this embodiment, as described above, since the entire upper surface 11 of the semiconductor module 1 constitutes a heat radiation plane, the lower surface area of the heat sink 3 in close contact with the heat radiation plane 11 of the semiconductor module 1 becomes the heat reception plane.
[0025]
The semiconductor module 1 is sandwiched between the heat sink 3 and the wiring board 2 at a predetermined pressure. This type of sandwich-type semiconductor module mounting structure itself is well known and is not the gist of this embodiment, so its illustration is omitted. Even when either the heat sink 3 or the wiring board 2 is omitted from the sandwich type semiconductor module mounting structure of FIG. 1, the grease application type semiconductor module contact structure described later in this embodiment can be applied.
[0026]
Hereinafter, the grease application type semiconductor module contact structure which characterizes this reference example will be described. FIG. 2 is a plan view showing the heat radiation plane 11 of the semiconductor module 1.
[0027]
In FIG. 2, between the heat radiating plane 11 of the semiconductor module 1 and the heat receiving plane of the heat sink 3, heat conductive grease (silver powder or the like may be mixed to improve heat conductivity and has the same function). A layer of soft material (which may be a gel-like material) is formed (not shown because it is too thin). In order to provide the grease layer, grease is applied to one or both of the heat radiation plane 11 of the semiconductor module 1 and the heat reception plane of the heat sink 3, and the semiconductor module 1 and the heat sink 3 are pressed at a predetermined pressure, and excess grease is applied. Can be discharged to the outside.
[0028]
This embodiment is characterized in that a structure for positively discharging the excess grease is provided on the heat radiation plane 11 of the semiconductor module 1. The heat radiation plane 11 is radially formed with grease extrusion grooves 12 that reach from the periphery of the semiconductor die 10 to the edge of the heat radiation plane 11 (that is, the (side edge of the semiconductor module 1). several to several hundred [mu] m, although depths it is suitable to the several hundred mu m, it is preferable to further may be large. grease extrusion groove 12 is provided as many, these design changes grease extrusion Although the performance is improved, the thermal conductivity from the heat radiation plane 11 of the semiconductor module 1 to the heat reception plane of the heat sink 3 is lowered, so that the optimum number and size of the grease extrusion grooves 12 are determined by the balance.
[0029]
The grease pushing groove 12 may be provided on the heat receiving plane of the heat sink 3 instead of being provided on the heat radiating plane 11 of the semiconductor module 1. Especially when an insulating film is provided between both surfaces, the grease is also applied to the heat radiating plane 11. Since it is applied also to the heat receiving plane, it is preferably provided on both sides.
[0030]
In this way, excess grease in the center of the contact area where both planes come into contact is pushed out to the outside through this groove, so that excess grease remains in the center of the contact area. It is possible to apply a sufficient amount of grease, and then quickly extrude excess grease to the outside without applying a long time or strong pressure, and excellent heat dissipation of the semiconductor module can be obtained.
[0031]
(Modification)
In the above embodiment, grease is applied only to the heat sink 3 side, but grease may be applied similarly to the wiring board 2 side. The wiring board 2 may be a metal plate for cooling (or as an electrode) similar to the heat sink 3. FIG. 3 shows a modification in which the insulating film 4 is provided on the lower surface side of the semiconductor module 1 and the heat sink 3 is changed to a metal plate.
[0032]
(Modification)
In FIG. 2, each grease pushing groove 12 is a single straight groove, but it may be a curved groove or may be branched into a plurality of grooves on the downstream side.
( Reference Example 2)
A semiconductor module mounting structure of Reference Example 2 will be described with reference to FIG. FIG. 4 is a side view of the semiconductor module mounting structure.
In this modification, a grease pushing groove 51 is provided in the thickness direction of the heat sink 3 shown in FIG. The grease pushing groove 51 reaches at least the back main surface 52 from the heat receiving plane of the heat sink 3. In this way, even if the heat receiving plane is wide, excess grease can be discharged to the outside from the boundary between the heat radiation plane 11 and the heat receiving plane. Preferably, the grease pushing groove 51 is preferably communicated with the grease pushing groove 12 shown in FIG. The diameter of the grease extrusion groove 51 is preferably set to be approximately the same as the width or depth of the grease extrusion groove 12.
[0033]
In this way, excess grease at the center of the contact area where both planes come into contact is pushed out well into this grease extrusion groove, so that excess grease remains in the center of this contact area. It is possible to apply a sufficient amount of grease, and then quickly extrude excess grease to the outside without applying a long time or strong pressure, and excellent heat dissipation of the semiconductor module can be obtained.
[0034]
(Modification)
The grease extrusion groove may have a cross-sectional area that increases stepwise or continuously as the distance from the heat radiation plane 11 increases. Thereby, the escape property of excess grease improves.
( Reference Example 3)
The semiconductor module structure of Reference Example 3 will be described with reference to FIG. FIG. 5 shows a case where a plurality of metal plates 14 to 17 are exposed apart from each other on the upper surface 11 and the lower surface 13 of the semiconductor module 1 in the heat sink - semiconductor module - wiring board structure shown in FIG. Surface areas other than the metal plates 14 to 17 on the upper surface 11 and the lower surface 13 of the semiconductor module 1 are resin planes 18. The inner main surface of the metal plates 14 to 17 is in close contact with the surface of a semiconductor die (not shown), and also serves as an electrode for these semiconductor dies. Also in this embodiment, the grease pushing grooves 12 shown in FIG. 2 are formed on the exposed surfaces (heat radiation planes) of the respective metal plates 14 to 17 of the semiconductor module 1, but they are not shown in FIG.
[0035]
The feature of this reference example is that a grease extrusion groove 19 is provided in the resin plane 18 of the resin portion surrounding the metal plates 14 to 17 of the semiconductor module 1 in the vicinity of the metal plates 14 to 17. The grease pushing groove 19 reaches the side edge of the semiconductor module 1. Preferably, the grease pushing groove 19 communicates with the grease pushing groove 12 shown in FIG.
[0036]
If it does in this way, the grease which escaped outside from between the heat radiation plane and the heat receiving plane will not be clogged between the heat receiving plane and the resin plane. In particular, even when the main surface of the semiconductor module 1 is large and the resin plane 18 is flush with the heat radiation plane, that is, the surfaces of the metal plates 14 to 17, the grease extruded from between the heat radiation plane and the heat reception plane is It is possible to satisfactorily prevent excessive grease from being accumulated between the heat receiving plane and the plane of the heat sink 3 or the wiring board 2 that is in close contact with the heat receiving plane. The gap between 1 and 1 does not increase.
In this embodiment, the grease extrusion groove 19 provided between the metal plates 14 and 15 is particularly preferable because it can extrude excessive grease that escapes in the direction of colliding with each other from both sides.
[0037]
( Example)
Hereinafter, describing the actual施例semiconductor module structure of the present invention with reference to FIGS. 6-12. However, the reference numerals in FIGS. 6 to 12 for describing this embodiment are irrelevant to the reference numerals in FIGS. 1 to 5 for describing the reference examples 1 to 3.
[0038]
(Overall explanation)
FIG. 6 is an overall perspective view of the semiconductor module 100 incorporating one half bridge circuit of the semiconductor module for a three-phase inverter circuit, and FIG. 7 is an exploded perspective view thereof.
[0039]
1 is a high-side plate, 2 is a low-side plate, 3 is a middle-side plate, 4 is an IGBT chip which is a high-side semiconductor chip on which an IGBT is formed, and 5 is a high-side semiconductor chip on which a junction diode is formed. A diode chip, 6 is an IGBT chip that is a low-side semiconductor chip on which an IGBT is formed, 7 is a diode chip that is a low-side semiconductor chip on which a junction diode is formed, 8 is a grease extrusion groove, and 11 is a high-side terminal. , 12 are low side terminals, and 13 is a middle side terminal. 14 is a small current terminal of the semiconductor chip 4, 15 is a small current terminal of the semiconductor chip 6, 16 is a solder layer, 17 is a copper spacer, 20 is a resin mold part, 28 is a grease extrusion groove, 29 is grease, and 30 protrudes Excess grease, 31 is an insulating film, and 32 is a cooling metal plate.
[0040]
The high side plate 1, the low side plate 2, the middle side plate 3, and the copper spacer 17 are made of a metal flat plate formed of tungsten, molybdenum, or the like. However, the copper plate may be formed by nickel plating.
[0041]
An IGBT chip 4 as an upper arm side semiconductor chip and a diode chip 5 are joined to each other on the lower surface of the high side plate 1 by a solder layer 16 adjacent to each other. The IGBT chip 4 and the diode chip 5 are joined to the upper surface of another copper spacer 17 through another solder layer 16, and the copper spacer 17 is joined to the upper surface of the middle side plate 3.
[0042]
An IGBT chip 6 as a lower arm element side semiconductor chip and a diode chip 7 are joined to each other adjacent to each other by a solder layer 16 on the upper surface of the middle side plate 3. The IGBT chip 6 and the diode chip 7 are bonded to the lower surface of another copper spacer 17 through another solder layer 16, and the copper spacer 17 is bonded to the lower surface of the low side plate 2. The side surface of each chip is covered and protected by the resin mold part 20. The resin mold part 20 has a flat plate shape as a whole, and the upper surfaces of the high side plate 1 and the low side plate 2 and the lower surface of the middle side plate 3 are exposed. On the low side plate 2, the diode chip 5, the IGBT chip 4, the IGBT chip 6, and the diode chip 7 are arranged in a row in the long side direction of the low side plate 2.
[0043]
As shown in FIG. 3, the copper spacer 17 bonded to the IGBT chip 4 is formed shorter than the IGBT chip 4 in the short side direction of the middle side plate 3 and is formed on the exposed surface of the IGBT chip 4. The conductive pad (not shown) is connected to the small current terminal 14 by a bonding wire (not shown). The resin mold part 20 protects the bonding wire. The high side plate 1 and the copper spacer 17 are individually joined to a conductive pad (not shown) that forms the main electrode of the IGBT chip 4. The same applies to the main electrodes on both sides of the diode chip 5.
[0044]
As shown in FIG. 4, the copper spacer 17 bonded to the IGBT chip 6 is formed shorter than the IGBT chip 6 in the short side direction of the middle side plate 3 and is formed on the exposed surface of the IGBT chip 6. The conductive pad (not shown) is connected to the small current terminal 15 by a bonding wire (not shown). The resin mold part 20 protects the bonding wire. The middle side plate 3 and the copper spacer 17 are individually joined to a conductive pad (not shown) that forms the main electrode of the IGBT chip 6. The same applies to the main electrodes on both sides of the diode chip 7.
[0045]
A semiconductor module 100 is shown in FIGS. 8 is an exploded perspective view of the semiconductor module 100, FIG. 9 is a sectional view thereof, FIG. 10 is a perspective view seen from the upper surface side, and FIG. 11 is a perspective view seen from the lower surface side.
[0046]
The high side terminal 11 projects from the side end of the high side plate 1, the low side terminal 12 projects from the side end from the low side plate 2, and the middle side terminal 13 projects from the side end of the middle side plate 3 toward the short side of the middle side terminal 13. Yes. The terminals 11 to 13 protrude on the opposite side to the small current terminals 14 and 15.
[0047]
(Description of grease extrusion groove)
The grease extrusion groove 8 is located between the high side plate 1 and the low side plate 2 and is recessed in the upper surface of the resin mold portion 20, and both ends thereof separately reach the side ends of the semiconductor module 1.
[0048]
Only one grease extrusion groove 28 is recessed in the high side plate 1, one in the low side plate 2, and three in the middle side plate 3.
[0049]
The grease extrusion groove 28 provided in the high side plate 1 is recessed between the IGBT chip 4 and the diode chip 5 in the thickness direction, and both ends thereof form a pair of short sides of the semiconductor module 100. Has reached the side edge.
[0050]
The grease pushing groove 28 provided in the low side plate 2 is recessed between the IGBT chip 6 and the diode chip 7 in the thickness direction, and both ends thereof form a pair of short sides of the semiconductor module 100. It reaches the side edge.
[0051]
Of the three grease extrusion grooves 28 provided in the middle side plate 3, one at the center is recessed on the back side of the grease extrusion groove 8, and the remaining two are the high side plate 1 and the low side plate 2. A recess is provided on the back side of the grease extrusion groove 28 provided in the recess.
[0052]
As shown in FIG. 7, the two main surfaces of the semiconductor module 100 are in close contact with the insulating film 31 via the thermally conductive grease 29, and the insulating film 31 is individually separated into the two cooling plates 32 via the thermally conductive grease 33. Is in close contact.
[0053]
At this time, excessive portions of the heat conductive grease 29 interposed between the high side plate 1, the low side plate 2 and the middle side plate 3 and the insulating film 31 are satisfactorily externalized through the grease pushing grooves 8 and 28 due to the narrow pressure. Therefore, the insulating film 31 can be satisfactorily adhered to the high side plate 1, the low side plate 2 and the middle side plate 3 in a short time.
[0054]
Similarly, a grease extrusion groove (not shown) is similarly formed on the surface of the cooling plate 32 made of an aluminum block, and excess thermal conductive grease 33 between the cooling plate 32 and the insulating film 31 is quickly and easily formed. Well discharged to the outside.
[0055]
Moreover, since the grease extrusion groove | channel 8 increases the creeping discharge distance between the high side board 1 and the low side board 2, and prevents the electric leakage between them, between the high side board 1 and the low side board 2 , And the semiconductor module 100 can be reduced in size.
[Brief description of the drawings]
FIG. 1 is a side view showing a semiconductor module mounting structure of Reference Example 1;
2 is a plan view showing a heat radiation plane of the semiconductor module of FIG. 1; FIG.
FIG. 3 is a side view showing a modified semiconductor module mounting structure;
FIG. 4 is a side view showing a semiconductor module mounting structure according to a modified embodiment.
5 is a side view showing a semiconductor module mounting structure of Reference Example 2. FIG.
FIG. 6 is a cross-sectional view of the half-bridge circuit module device according to the embodiment.
7 is an exploded perspective view of FIG. 6. FIG.
8 is an exploded perspective view of a semiconductor module used in the module device of FIG. 6. FIG.
9 is a cross-sectional view taken along line AA of the semiconductor module of FIG.
10 is a perspective view of the semiconductor module of FIG. 8 as viewed from the upper surface side.
11 is a perspective view of the semiconductor module of FIG. 8 as viewed from the lower surface side.
12 is a perspective view showing a state where the grease protrudes in the apparatus shown in FIG. 6; FIG.
[Explanation of symbols ]
1 High side plate 2 Low side plate 3 Middle side plate
4 IGBT chip (semiconductor element)
5 Diode chip (semiconductor element)
6 IGBT chip (semiconductor element)
7 Diode chip (semiconductor element)
8 Grease extrusion groove
16 Solder layer
17 Copper spacer
20 Resin mold part
28 Grease extrusion groove
29 Grease
31 Insulation film
32 Cooling metal plate

Claims (2)

A semiconductor module in which a heat radiation plane, which is a heat radiation plane, is exposed and includes a plurality of semiconductor elements;
A plate-like, block-like, or film-like adhesion member that has a heat receiving plane closely attached to the heat radiating plane and absorbs heat from the semiconductor module from the heat radiating plane through the heat receiving plane;
Grease interposed between the two planes;
In a semiconductor module mounting structure comprising:
The semiconductor module is
An electrode plate having an exposed surface forming the heat dissipation plane and connected to the plurality of semiconductor elements;
The heat radiation plane is
It is located only in a region other than the region overlapping with the semiconductor element in the thickness direction, and has a grease extrusion groove located at least between the plurality of semiconductor elements and reaching an edge of the semiconductor module. Semiconductor module mounting structure. The semiconductor module mounting structure according to claim 1,
The grease extrusion groove is
The semiconductor module mounting portion reaches the edge of the semiconductor module at a position that does not overlap with the metal plate interposed between the semiconductor element and the electrode plate in the thickness direction of the semiconductor element. Characteristic semiconductor module mounting structure.

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