JP4056365B2 - Substrate processing fluid supply system - Google Patents

Substrate processing fluid supply system Download PDF

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Publication number
JP4056365B2
JP4056365B2 JP2002334790A JP2002334790A JP4056365B2 JP 4056365 B2 JP4056365 B2 JP 4056365B2 JP 2002334790 A JP2002334790 A JP 2002334790A JP 2002334790 A JP2002334790 A JP 2002334790A JP 4056365 B2 JP4056365 B2 JP 4056365B2
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Japan
Prior art keywords
substrate
fluid supply
temperature
cleaning liquid
carbon dioxide
Prior art date
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Expired - Fee Related
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JP2002334790A
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Japanese (ja)
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JP2003220370A (en
Inventor
正美 大谷
忠司 佐々木
彰彦 森田
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、半導体ウエハ、フォトマスク用のガラス基板、液晶表示装置用のガラス基板、光ディスク用の基板等の基板に、洗浄液に炭酸ガスを溶解した処理流体を供給する基板処理用流体供給装置に関する。
【0002】
【従来の技術】
従来の基板処理用流体供給装置として、洗浄液の比抵抗を下げることにより基板表面での静電気発生を防止して洗浄性を向上するために、純水などの洗浄液に炭酸ガスを溶解し、その洗浄液を、処理室内に装填されている基板の表面に供給するものがあった。
【0003】
【発明が解決しようとする課題】
しかしながら、従来の基板処理用流体供給装置の場合、処理液の温度が移送中に上がると、溶解していた炭酸ガスが洗浄液中で気泡化し、洗浄液の比抵抗値が所望の値から変わったり、流路中のフィルター中等において炭酸ガスの気泡が洗浄液圧送のための圧力を吸収し、洗浄液を供給しづらくなる欠点があった。
【0004】
本発明は、このような事情に鑑みてなされたものであって、処理流体の移送中において、炭酸ガスの気泡化を簡単な構成で防止できるようにすることを目的とする。
【0005】
【課題を解決するための手段】
請求項1に係る発明は、上述のような目的を達成するために、基板に洗浄液を供給するノズルと、洗浄液に炭酸ガスを溶解する溶解手段とを、移送管を介して接続した基板処理用流体供給装置において、
前記溶解手段に温調手段を設け、クリーンルーム内の温度よりも高温の約25℃の恒温水を前記温調手段に供給することにより、前記移送管内を流動する洗浄液の温度前記溶解手段側よりも高くならないように維持するように構成する。
【0006】
【0007】
【作用】
請求項1に係る発明の基板処理用流体供給装置の構成によれば、溶解手段に温調手段を設け、洗浄液に炭酸ガスを溶解した処理液体を、移送管での移送途中において溶解手段側よりも温度が高くならないように維持し、溶解手段側よりも温度が低い状態で移送管を経て基板表面に供給することができる。そのため、処理液体に溶解された炭酸ガスが移送管内で飽和状態となることはない。
【0008】
【0009】
【発明の実施の形態】
次に、本発明の実施例を図面を用いて詳細に説明する。
図1は、本発明に係る第1実施例の基板処理用流体供給装置を用いた回転式基板洗浄装置を示す概略縦断面図、図2は、図1の要部の平面図であり、第1の電動モータ22の回転軸23の上端に基板Wを真空吸着保持する回転台24を設けて基板保持手段25が構成され、その基板保持手段25によって鉛直方向の軸芯周りで回転可能に保持される基板Wの上方の所定箇所に、第2の電動モータ26によって回転変位可能に支持ブラケット27が設けられるとともに、その支持ブラケット27に、炭酸ガスを溶解した洗浄液を高圧で供給するノズル28が設けられ、このノズル28に基板処理用流体供給装置29が接続されている。
【0010】
上記基板保持手段25としては、基板Wを真空吸着保持するものに限らず、例えば、回転台24上に基板Wの外周縁を支持する基板支持部材を複数設けるとともに、この基板支持部材の上端に基板Wの水平方向の位置を規制する位置決めピンを設け、基板Wを回転台24の上面から離間した状態で回転可能に保持させるように構成するものでもよい。
【0011】
基板保持手段25およびそれによって保持された基板Wの周囲は、昇降駆動機構(図示せず)によって昇降可能なカップ30で覆われ、基板Wの洗浄時に、基板Wの上に供給される洗浄液の飛散を防止できるように構成されている。図中31は、基板Wの表面上まで変位可能な基板表面を洗浄する洗浄ブラシを示し、また、32は、基板Wの上方から外れた非洗浄時の待機位置にあるときに、洗浄ブラシ31に付着した塵埃を除去する待機ポットを示している。
【0012】
基板処理用流体供給装置29は、洗浄液としての純水を貯留するステンレス製または樹脂製の純水タンク33に、炭酸ガスの導入管34を接続するとともに、前記ノズル28と純水タンク33とを移送管35を介して接続して構成されている。洗浄液としての純水に炭酸ガスを溶解するために純水タンク33に炭酸ガスの導入管34を接続する構成を溶解手段と称する。
【0013】
導入管34には、一定圧力で炭酸ガスを供給するレギュレータ34aが付設されている。また、移送管35には、洗浄液の供給量を制御する流量制御バルブ36とフィルター37とが付設されている。
【0014】
純水タンク33に純水を供給する純水供給管38が接続されるとともに、純水供給管38に開閉弁39が設けられている。純水タンク33の底側と上方側とにわたって連通管40が接続され、この連通管40の上方と下方それぞれに、一対づつの液面計19a,19a、19b,19bが設けられ、これらの液面計19a,19a、19b,19bがコントローラ20に接続されるとともにコントローラ20と開閉弁39とが接続され、純水タンク33内の処理液量が上方の液面計19a,19a間に維持されるように開閉弁39を自動的に開閉制御し、一方、処理液の供給源での故障などに起因して開閉弁39を開いているにもかかわらず、処理液量が異常に減少した場合には、そのことを下方側の液面計19b,19bによって感知し、ブザーやランプなどの警報装置(図示せず)を作動できるように構成されている。
【0015】
純水タンク33内の下方に、温調手段としての熱交換コイル41が設けられるとともに、その熱交換コイル41に、クリーンルーム内の温度約23℃より高温の約25℃の恒温水が供給されるように構成されている。
【0016】
以上の構成により、移送管35内を流動する洗浄液の温度を純水タンク33側よりも高くならないように維持する。これにより、洗浄液に溶解された炭酸ガスが移送管35内で飽和状態となることはない。よって、移送管35内で、洗浄液中に溶解した炭酸ガスが気泡化して分離することを防止し、純水タンク33内で炭酸ガスを溶解して比抵抗を下げた洗浄液をノズル28から基板Wの表面に供給し、静電気を発生させずに良好に基板Wの表面を洗浄処理することができる。
【0017】
図3は、本発明に係る第2実施例の基板処理用流体供給装置を用いた回転式基板洗浄装置を示す概略縦断面図であり、第1実施例と異なるところは次の通りである。
すなわち、炭酸ガス透過性の膜42によって上室43と下室44とに仕切られて溶解手段としての溶解装置45が構成されている。上室43に、開閉弁46を備えた炭酸ガスを供給する導入管47と排気管48とが接続されている。一方、下室44に純水供給管49が接続されるとともに、下室44とノズル50とが移送管51を介して接続されている。
【0018】
下室44内に温調手段としての熱交換コイル52が設けられ、その熱交換コイル52に、クリーンルーム内の温度約23℃より高温の約25℃の恒温水が供給されるように構成されている。他の構成は、第1実施例と同じであり、同一図番を付してその説明は省略する。
【0019】
この第2実施例によれば、炭酸ガスを膜42を通じて純水中に供給するため、炭酸ガス中のゴミや不純物をより効果的に除去できる利点を有している
【0020】
上記実施例では、温調手段として、恒温水を流す熱交換コイル41,52を設けているが、ヒータあるいは冷却装置などを設けるものでも良い。
また、上記実施例では、温調手段として、純水タンク33、溶解装置45に熱交換コイル41,52を設けているが、これに限らず、例えば、純水タンク33、溶解装置45を恒温水ジャケットで覆う構成としても良い。これらの実施例では、温調手段を、純水タンク33や溶解装置45の側にのみ設け、その構成を簡単にできるようにしているが、本発明としては、例えば、移送管35,51を、恒温水を通す熱交換用のパイプ内に挿通するとか、移送管35,51の外周に伝熱可能に恒温水を通す熱交換用のパイプを接触させるなど、両方の側に温調手段を設けても良い。
【0021】
本発明としては、上述実施例のような円形基板に限らず、角型基板に対する回転式基板洗浄装置にも適用できる。
【0022】
【発明の効果】
以上説明したように、請求項1に係る発明の基板処理用流体供給装置によれば、洗浄液に炭酸ガスを溶解した処理液体の温度を、移送管を経て基板表面に供給するまで溶解手段側よりも低くするから、処理流体の移送中において、炭酸ガスの溶解濃度が飽和点を越えることを回避でき、炭酸ガスの気泡化を防止でき、洗浄液の圧送不良を招くこと無く静電気除去作用を良好に発揮させることができるようになった。
しかも、炭酸ガスの気泡化を防止するのに、溶解手段に温調手段を設けるから、移送管全体に温調手段を設ける場合に比べ、構成を簡単にできて経済的である。
【0023】
【図面の簡単な説明】
【図1】 本発明に係る第1実施例の基板処理用流体供給装置を用いた回転式基板洗浄装置を示す概略縦断面図である。
【図2】 図1の要部の平面図である。
【図3】 本発明に係る第2実施例の基板処理用流体供給装置を用いた回転式基板洗浄装置を示す概略縦断面図である。
【符号の説明】
33…溶解手段を構成する純水タンク
34…溶解手段を構成する導入管
35,51…移送管
41,52…温調手段としての熱交換コイル
45…溶解装置
W…基板
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing fluid supply device for supplying a processing fluid in which carbon dioxide gas is dissolved in a cleaning liquid to a substrate such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display device, or a substrate for an optical disk. .
[0002]
[Prior art]
As a conventional substrate processing fluid supply device, in order to prevent the generation of static electricity on the substrate surface by reducing the specific resistance of the cleaning liquid and improve the cleaning performance, carbon dioxide gas is dissolved in a cleaning liquid such as pure water, and the cleaning liquid Is supplied to the surface of the substrate loaded in the processing chamber.
[0003]
[Problems to be solved by the invention]
However, in the case of the conventional substrate processing fluid supply apparatus, when the temperature of the processing liquid rises during transfer, dissolved carbon dioxide gas bubbles in the cleaning liquid, and the specific resistance value of the cleaning liquid changes from a desired value, Carbon dioxide bubbles in the filter in the flow path absorb the pressure for pumping the cleaning liquid, making it difficult to supply the cleaning liquid.
[0004]
The present invention was made in view of such circumstances, during the transfer of processing fluid, and an object thereof is to allow preventing the bubbles of carbon dioxide gas with a simple configuration.
[0005]
[Means for Solving the Problems]
The invention according to claim 1, in order to achieve the above-described object, a nozzle for supplying a cleaning liquid to the substrate, and dissolving means for dissolving carbon dioxide gas in the cleaning solution, substrate processing connected through a transfer pipe In the fluid supply device,
The melting means is provided with a temperature adjusting means, and by supplying constant temperature water at a temperature of about 25 ° C., which is higher than the temperature in the clean room, to the temperature adjusting means, the temperature of the cleaning liquid flowing in the transfer pipe is from the melting means side. Also, it is configured to keep it from becoming high .
[0006]
[0007]
[Action]
According to the configuration of the substrate processing fluid supply apparatus of the invention according to claim 1, the melting means is provided with the temperature adjusting means, and the processing liquid in which the carbon dioxide gas is dissolved in the cleaning liquid is transferred from the dissolving means side during the transfer in the transfer pipe. However, the temperature can be maintained so as not to increase, and the substrate can be supplied to the substrate surface via the transfer tube in a state where the temperature is lower than that of the melting means. Therefore, the carbon dioxide gas dissolved in the treatment liquid does not become saturated in the transfer pipe.
[0008]
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic longitudinal sectional view showing a rotary substrate cleaning apparatus using a substrate processing fluid supply apparatus according to a first embodiment of the present invention. FIG. 2 is a plan view of the main part of FIG. A rotary table 24 for holding the substrate W by vacuum suction is provided at the upper end of the rotary shaft 23 of one electric motor 22 to constitute a substrate holding means 25. The substrate holding means 25 holds the substrate W so as to be rotatable around a vertical axis. at a predetermined position above the substrate W to be, the rotation displaceably supported bracket 27 is provided by the second electric motor 26, its supporting bracket 27, Roh nozzle washing liquid obtained by dissolving carbon dioxide gas you supplied at high pressure 28 is provided, and a substrate processing fluid supply device 29 is connected to the nozzle 28.
[0010]
The substrate holding means 25 is not limited to the one that holds the substrate W by vacuum suction. For example, a plurality of substrate support members that support the outer peripheral edge of the substrate W are provided on the turntable 24, and the upper end of the substrate support member is provided. A positioning pin that regulates the horizontal position of the substrate W may be provided, and the substrate W may be configured to be rotatably held in a state of being separated from the upper surface of the turntable 24.
[0011]
The substrate holding means 25 and the periphery of the substrate W held thereby are covered with a cup 30 that can be lifted and lowered by a lift drive mechanism (not shown), and the cleaning liquid supplied onto the substrate W when the substrate W is cleaned. It is configured to prevent scattering. In the figure, reference numeral 31 denotes a cleaning brush for cleaning the substrate surface that can be displaced up to the surface of the substrate W, and reference numeral 32 denotes a cleaning brush 31 when the cleaning brush 31 is in a non-cleaning standby position that is off the upper side of the substrate W. The standby pot which removes the dust adhering to is shown.
[0012]
The substrate processing fluid supply device 29 connects a carbon dioxide introduction pipe 34 to a stainless steel or resin pure water tank 33 for storing pure water as a cleaning liquid, and connects the nozzle 28 and the pure water tank 33 to each other. It is configured to be connected via a transfer pipe 35. The structure in which the carbon dioxide gas introduction pipe 34 is connected to the pure water tank 33 in order to dissolve the carbon dioxide gas in the pure water as the cleaning liquid is referred to as a dissolution means.
[0013]
A regulator 34 a that supplies carbon dioxide gas at a constant pressure is attached to the introduction pipe 34. Further, the transfer pipe 35 is provided with a flow rate control valve 36 and a filter 37 for controlling the supply amount of the cleaning liquid.
[0014]
A pure water supply pipe 38 for supplying pure water to the pure water tank 33 is connected, and an open / close valve 39 is provided in the pure water supply pipe 38. A communication pipe 40 is connected to the bottom side and the upper side of the pure water tank 33, and a pair of liquid level gauges 19a, 19a, 19b, 19b are provided above and below the communication pipe 40, respectively. The level gauges 19a, 19a, 19b, 19b are connected to the controller 20, and the controller 20 and the on-off valve 39 are connected to maintain the amount of processing liquid in the pure water tank 33 between the upper level gauges 19a, 19a. On the other hand, when the on-off valve 39 is automatically controlled to open and close, while the on-off valve 39 is opened due to a failure in the processing liquid supply source, the amount of the processing liquid is abnormally reduced. Is configured so that an alarm device (not shown) such as a buzzer or a lamp can be actuated by detecting this by the lower level gauges 19b and 19b.
[0015]
A heat exchange coil 41 as a temperature control means is provided below the pure water tank 33, and constant temperature water having a temperature higher than about 23 ° C. in the clean room is supplied to the heat exchange coil 41. It is configured as follows.
[0016]
With the above configuration, the temperature of the cleaning liquid flowing in the transfer pipe 35 is maintained so as not to be higher than that of the pure water tank 33 side. Thereby, the carbon dioxide dissolved in the cleaning liquid is not saturated in the transfer pipe 35. Accordingly, the carbon dioxide dissolved in the cleaning liquid is prevented from being bubbled and separated in the transfer pipe 35, and the cleaning liquid in which the specific resistance is reduced by dissolving the carbon dioxide in the pure water tank 33 is transferred from the nozzle 28 to the substrate W. The surface of the substrate W can be satisfactorily cleaned without generating static electricity.
[0017]
FIG. 3 is a schematic longitudinal sectional view showing a rotary substrate cleaning apparatus using the substrate processing fluid supply apparatus according to the second embodiment of the present invention. The difference from the first embodiment is as follows.
That is, a melting device 45 as a melting means is configured by being partitioned into an upper chamber 43 and a lower chamber 44 by a carbon dioxide gas permeable film 42. Connected to the upper chamber 43 is an introduction pipe 47 for supplying carbon dioxide gas having an on-off valve 46 and an exhaust pipe 48. On the other hand, a pure water supply pipe 49 is connected to the lower chamber 44, and the lower chamber 44 and the nozzle 50 are connected via a transfer pipe 51.
[0018]
A heat exchange coil 52 is provided in the lower chamber 44 as temperature control means, and constant temperature water at a temperature of about 25 ° C., which is higher than the temperature in the clean room, about 23 ° C. is supplied to the heat exchange coil 52. Yes. Other configurations are the same as those of the first embodiment, and the same reference numerals are given and description thereof is omitted.
[0019]
According to the second embodiment, carbon dioxide gas is supplied into the pure water through the membrane 42, and therefore, there is an advantage that dust and impurities in the carbon dioxide gas can be more effectively removed.
In the above-described embodiment, the heat exchange coils 41 and 52 for flowing constant temperature water are provided as temperature control means, but a heater or a cooling device may be provided.
Moreover, in the said Example, although the heat exchange coils 41 and 52 are provided in the pure water tank 33 and the melting | dissolving apparatus 45 as temperature control means, it does not restrict to this, For example, the pure water tank 33 and the melting | dissolving apparatus 45 are made constant temperature. It is good also as a structure covered with a water jacket. In these embodiments, the temperature control means is provided only on the pure water tank 33 or the melting device 45 side so that the configuration can be simplified. For example, in the present invention, the transfer pipes 35 and 51 are provided. , Toka inserted into the pipe for heat exchange through the constant-temperature water, such as contacting the pipe for heat exchange through the heat transfer can be constant-temperature water on the outer circumference of the transfer pipe 35,51, temperature control means on the side of both May be provided.
[0021]
The present invention is not limited to the circular substrate as in the above-described embodiment, but can be applied to a rotary substrate cleaning apparatus for a square substrate.
[0022]
【The invention's effect】
As described above, according to the substrate processing fluid supply apparatus of the first aspect of the present invention, the temperature of the processing liquid obtained by dissolving the carbon dioxide gas in the cleaning liquid is supplied from the dissolving means side until it is supplied to the substrate surface through the transfer pipe. Therefore, it is possible to avoid the carbon dioxide dissolution concentration from exceeding the saturation point during the transfer of the processing fluid, to prevent the formation of carbon dioxide bubbles, and to improve the static electricity removal effect without causing poor pumping of the cleaning liquid. It has become possible to demonstrate.
In addition, since the temperature adjusting means is provided in the melting means to prevent the carbon dioxide gas from being bubbled, the configuration can be simplified and economical compared to the case where the temperature adjusting means is provided in the entire transfer pipe.
[0023]
[Brief description of the drawings]
FIG. 1 is a schematic longitudinal sectional view showing a rotary substrate cleaning apparatus using a substrate processing fluid supply apparatus according to a first embodiment of the present invention.
FIG. 2 is a plan view of the main part of FIG.
FIG. 3 is a schematic longitudinal sectional view showing a rotary substrate cleaning apparatus using a substrate processing fluid supply apparatus according to a second embodiment of the present invention.
[Explanation of symbols]
33 ... Pure water tank constituting melting means 34 ... Introducing pipes 35, 51 constituting melting means ... Transfer pipes 41, 52 ... Heat exchange coil as temperature control means 45 ... Melting apparatus W ... Substrate

Claims (1)

基板に洗浄液を供給するノズルと、洗浄液に炭酸ガスを溶解する溶解手段とを、移送管を介して接続した基板処理用流体供給装置において、
前記溶解手段に温調手段を設け、クリーンルーム内の温度より高温の約25℃の恒温水を前記温調手段に供給することにより、前記移送管内を流動する洗浄液の温度前記溶解手段側よりも高くならないように維持することを特徴とする基板処理用流体供給装置。
A nozzle for supplying a cleaning liquid to the substrate, and dissolving means for dissolving carbon dioxide gas in the cleaning liquid, the fluid supply device substrate processing connected via a transfer tube,
The melting means is provided with a temperature control means, and by supplying constant temperature water of about 25 ° C., which is higher than the temperature in the clean room, to the temperature control means, the temperature of the cleaning liquid flowing in the transfer pipe is set to be higher than that of the melting means side. A substrate processing fluid supply apparatus, wherein the substrate processing fluid supply apparatus is maintained so as not to become high .
JP2002334790A 2002-11-19 2002-11-19 Substrate processing fluid supply system Expired - Fee Related JP4056365B2 (en)

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JP6571942B2 (en) * 2015-02-05 2019-09-04 株式会社Screenホールディングス Substrate processing equipment
KR102355189B1 (en) * 2015-03-30 2022-01-26 주식회사 케이씨텍 Wafer treatment apparatus
CN113714215A (en) * 2021-08-25 2021-11-30 宁波江丰电子材料股份有限公司 Cleaning method of cooling disc for semiconductor

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