JP4045816B2 - Method for forming porous titanium oxide thin film-coated film - Google Patents
Method for forming porous titanium oxide thin film-coated film Download PDFInfo
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- JP4045816B2 JP4045816B2 JP2002042740A JP2002042740A JP4045816B2 JP 4045816 B2 JP4045816 B2 JP 4045816B2 JP 2002042740 A JP2002042740 A JP 2002042740A JP 2002042740 A JP2002042740 A JP 2002042740A JP 4045816 B2 JP4045816 B2 JP 4045816B2
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims description 34
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 title claims description 34
- 239000010408 film Substances 0.000 title claims description 25
- 239000010409 thin film Substances 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 20
- 229920006254 polymer film Polymers 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 17
- 238000010884 ion-beam technique Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 230000001133 acceleration Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 238000004804 winding Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052743 krypton Inorganic materials 0.000 claims description 5
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000000463 material Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 230000001699 photocatalysis Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229920006267 polyester film Polymers 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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Description
【０００１】
【発明の属する技術分野】
本発明は光触媒機能を有する多孔性酸化チタン薄膜を耐熱性の低いポリマーフィルム基材上に形成する方法に関する。
【０００２】
【従来の技術】
酸化チタン薄膜は、光照射によりその表面で生じる酸化・還元反応（電子供受反応）機構を利用してセルフクリーニング、抗菌、浄化などの機能をもつ光触媒機能材料として広く利用されている。この光触媒機能を向上させるため反応比表面積を大きくする多孔質化に関する開発が進められている。従来、多孔性酸化チタン薄膜の成膜プロセスは、酸化チタンあるいはアルコキサイドチタンの微粒子を溶媒中に分散させ、それを基材上に塗布し、その後焼成する方法（例えば、特開平１１−２０４１５２号公報）が多く見られた。
【０００３】
【発明が解決しようとする課題】
前記の微粒子塗布のような方法では、３００℃以上の高温で焼成する必要があった。しかし、基材によっては耐熱性が低く、よって高温の印加が基材に対し変質あるいは劣化が生じることがあった。
【０００４】
また、真空蒸着のような物理蒸発堆積（ＰＶＤ）法において、成膜の際プラズマあるいはイオンビームの照射による原子のはじき出し効果を利用し、制御性のよい空孔（欠陥）の形成方法（例えば、特開２００１−９８３７３号公報）も見られる。この方法では、基材に高温を印加せずともプラズマやイオンビームの反応活性化により酸化チタン薄膜を上記ポリマーフィルム上に形成できる。しかし、酸化物の場合、酸素が選択的にはじき出されやすいため組成が変化し特性の劣化することがある。
【０００５】
本発明の目的は、ＰＶＤ法により高温を印可できない耐熱性の低いポリマーフィルム上に、生産性の高い連続成膜が可能な、制御された多孔性を有する酸化チタン薄膜被覆フィルムの形成方法を提供することにある。
【０００６】
【課題を解決するための手段】
表記目的を達成するために、請求項１に係る発明は、ポリマーフィルム基材を巻き取る巻取装置を備え、その基材の下方に設置された蒸発源から金属チタンあるいは酸化チタンを蒸発させ、同時にラジカルビーム発生源及びイオンビーム発生源から酸素ラジカルおよび希ガスイオンを照射し、前記基材上で酸化チタン薄膜を形成する多孔性酸化チタン薄膜被覆フィルムの形成方法であって、前記ポリマーフィルム基材に照射するイオンビームの［（イオン原子量）×（加速電圧）］ １／２ の値が１３０以上であることを特徴とする多孔性酸化チタン薄膜被覆フィルムの形成方法である。
【０００７】
また、請求項２に係る発明は、請求項１記載の多孔性酸化チタン薄膜被覆フィルムの形成方法において、前記ポリマーフィルム基材付近に照射される酸素ラジカル濃度が、同時に照射されるチタン原子濃度の１０倍以上であることを特徴とする。
【０００８】
また、請求項３に係る発明は、請求項１または２記載の多孔性酸化チタン薄膜被覆フィルムの形成方法において、前記ポリマーフィル基材に照射するイオンの種類として、アルゴン、クリプトン、キセノンのいずれかの希ガスであることを特徴とする。
【００１０】
＜作用＞
基材に対して、イオンビームと同時に化学反応に活性な酸素ラジカルビームを照射することで高エネルギーイオンビームによる空孔生成と同時に選択的にスパッタされた酸素原子の欠陥を直ちに補うことができ、組成変化に伴う特性劣化を防ぐことができる。
【００１１】
また、この酸素ラジカル濃度は蒸発金属濃度に対し１０倍以上と十分に存在させることで前記欠陥を効果的に補うことができる。
【００１２】
また、イオンを希ガスのような不活性ガスにすることにより、チタン原子とイオンとの反応を生じさせない。また照射されるイオンを原子量の比較的重いアルゴン・クリプトン・キセノンにすることにより、イオンによる原子のはじき出し効果を最大限に生じさせることができる。
【００１３】
また、イオンビームの運動量の目安となる［（イオン原子量）×（加速電圧）］1/2の値が１３０以上にすることにより、イオンによる原子のはじき出し効果を最大限に生じさせることができる。イオンの衝撃強度はその運動量に依存している。イオンエネルギーを表す加速電圧（Ｖacc）をその運動エネルギー（ｍｖ2／２、ｍ：イオン原子量、ｖ：速度）とすると、運動量ｍｖは（ｍＶacc）1/2に比例関係にある。したがって（ｍＶacc）1/2の値は原子のはじき出し効果を計る目安となることがわかる。
【００１４】
【発明の実施の形態】
以下、本発明の一例としての実施形態を図面を用いて説明する。
本発明は、図１のような巻取式真空蒸着装置を用いて行うものである。この装置は、真空チェンバー（１）内にポリマーフィルム（２）を移動させるための巻き出し機（３）及び巻き取り機（４）、冷却可能なクーリングキャン（５）、蒸着材料である金属チタンあるいは酸化チタン（６）を保持する蒸発源（７）、ポリマーフィルム基材（２）に向かって導入されているラジカルビーム発生源（８）およびイオンビーム発生源（９）から構成されている。
【００１５】
前記ポリマーフィルム（２）は、巻き出し機（３）からクーリングキャン（５）に沿って供給され、酸化チタン薄膜が形成される。酸化チタン薄膜が形成されたポリマーフィルム（２）は巻き取り機（４）によって巻き取られる。
【００１６】
本発明に使用するポリマーフィルム（２）基材としては、例えばポリオレフィン、ポリエステル、ポリイミドなど厚さ１０〜２００μｍのポリマーフィルムであれば本発明の目的を逸脱しない。
【００１７】
前記蒸着材料を蒸発させる蒸発源（７）としては、抵抗加熱法・電子ビーム法・スパッタリング法など金属あるいは金属酸化物を蒸発させられるものであれば本発明の目的を逸脱しない。
【００１８】
上記巻取式真空蒸着装置を用いて行われる本発明の多孔性酸化チタン薄膜被服フィルムの形成方法について述べる。まず真空度２×１０-4Ｐａ以下とした真空チェンバー（１）下部に設置された蒸発源（７）内に保持された蒸着材料である金属チタンあるいは酸化チタン（６）を、クーリングキャン（５）上のポリマーフィルム（２）に向けて蒸発させる。一方、ラジカルビーム発生源（８）から酸素ラジカルを、イオンビーム発生源（７）から希ガスのイオンを上記ポリマーフィルム（２）に向けて同時に照射し、酸化チタン薄膜を成膜させる。
【００１９】
【実施例】
以下、本発明の好ましい一実施例についてさらに具体的に説明する。本発明は、下記の実施例に限定されるものではない。
図１に示した形成装置により蒸着材料を金属チタンとして電子ビームにより０．１ｎｍｓ-1の一定速度で蒸発させ、ポリエステルフィルム上に酸化チタン薄膜を形成した。この時、基材に照射される酸素ラジカル濃度は６×１０15ｃｍ-2ｓ-1で一定とした。これは、蒸発チタン原子濃度の約１０倍に相当する。また、イオンビームはガスとして、Ｈｅ、Ｎｅ、Ａｒ、Ｋｒ、Ｘｅを用い、電流密度８μＡ ｃｍ-2で一定とし、加速電圧Ｖaccを２００〜８００ｅＶの範囲で変化させた。基材となるポリエステルフィルムには強制加熱は施さなかった。図２には、ポリエステルフィルム上に形成された酸化チタン薄膜の膜密度に対するイオンビームの［（原子量）×（加速電圧）］1/2の（ｍＶacc）1/2依存性を示した。図２から、希ガスの種類に無関係に同様の（ｍＶacc）1/2依存性が認められた。イオンビームを照射してない（ｍＶacc）1/2＝０では膜密度は３．８ｇｃｍ-3であった。（ｍＶacc）1/2が５０から１３０の範囲で膜密度は４．０ｇｃｍ-3までわずかに増加するが、１３０以上で膜密度が減少し始め、３００付近では２．５ｃｍ-3となった。したがって、上記範囲の（ｍＶacc）1/2で酸化チタン薄膜の空孔生成（多孔質化）が効果的に生じることがわかった。また、この時生成した酸化チタン薄膜の化学構造は完全酸化されていた。このように（ｍＶacc）1/2を変化させることで酸化チタン薄膜の空孔率（多孔性）の制御が可能となった。
【００２０】
（ｍＶacc）1/2が１３０以上の場合、Ｈｅ及びＮｅではその加速電圧はそれぞれ４２００、８５０ｅＶ以上必要となる。しかし、８００ｅＶ以上の加速電圧は通常のイオンビーム発生装置では発生させることが難しい。したがって、使用できるガスとしてはＡｒ、Ｋｒ、Ｘｅが望ましい。
【００２１】
【発明の効果】
以上のように、本発明の多孔性酸化チタン薄膜被覆フィルムの形成方法によれば、ポリマーフィルムなど耐熱性の低い基材に対して、劣化・変質を最小限に抑え、かつ膜密度の低い多孔質な酸化チタン薄膜被覆フィルムを効率的に形成できる。
【００２２】
また、前記多孔性酸化チタン薄膜被覆フィルムを、ロール状態から巻き出されたポリマーフィルム上に形成できることで、高スループットの連続成膜が可能となった。
【図面の簡単な説明】
【図１】本発明の一実施形態を説明するための巻き取り式成膜装置の略図である。
【図２】本発明の実施例１の［（イオン原子量）×（加速電圧）］1/2である（ｍＶacc）1/2に対する酸化チタン薄膜の膜密度の関係図である。
【符号の説明】
１：真空チェンバー
２：ポリマーフィルム
３：巻き出し機
４：巻き取り機
５：クーリングキャン
６：蒸着材料
７：蒸発源
８：ラジカルビーム発生源
９：イオンビーム発生源[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for forming a porous titanium oxide thin film having a photocatalytic function on a polymer film substrate having low heat resistance.
[0002]
[Prior art]
Titanium oxide thin films are widely used as a photocatalytic functional material having functions such as self-cleaning, antibacterial activity, and purification by utilizing an oxidation / reduction reaction (electron child acceptance reaction) mechanism generated on the surface by light irradiation. In order to improve the photocatalytic function, development relating to the formation of a porous material having a large reaction specific surface area is in progress. Conventionally, a porous titanium oxide thin film is formed by dispersing fine particles of titanium oxide or alkoxide titanium in a solvent, applying the fine particles on a substrate, and then baking (for example, JP-A-11-204152). No. Gazette) was seen.
[0003]
[Problems to be solved by the invention]
In the method such as the fine particle coating described above, it is necessary to perform baking at a high temperature of 300 ° C. or higher. However, depending on the base material, the heat resistance is low, and thus application of high temperature may cause alteration or deterioration of the base material.
[0004]
Moreover, in physical vapor deposition (PVD) methods such as vacuum evaporation, a method of forming vacancies (defects) with good controllability by utilizing the effect of atom blasting by plasma or ion beam irradiation during film formation (for example, JP 2001-98373 A) is also seen. In this method, a titanium oxide thin film can be formed on the polymer film by activation of plasma or ion beam reaction without applying a high temperature to the substrate. However, in the case of an oxide, oxygen is likely to be selectively ejected, so the composition may change and the characteristics may deteriorate.
[0005]
An object of the present invention is to provide a method for forming a titanium oxide thin film coating film having a controlled porosity and capable of continuous film formation with high productivity on a polymer film with low heat resistance that cannot be applied at high temperature by the PVD method. There is to do.
[0006]
[Means for Solving the Problems]
In order to achieve the notation purpose, the invention according to claim 1 includes a winding device that winds the polymer film substrate, evaporates metal titanium or titanium oxide from an evaporation source installed below the substrate, A method for forming a porous titanium oxide thin film-covered film, in which oxygen radicals and rare gas ions are simultaneously irradiated from a radical beam generation source and an ion beam generation source to form a titanium oxide thin film on the substrate. A method for forming a porous titanium oxide thin film-covered film, wherein the value of [(ion atomic weight) × (acceleration voltage)] 1/2 of the ion beam applied to the material is 130 or more .
[0007]
The invention according to
[0008]
The invention according to
[0010]
<Action>
By irradiating the base material with an oxygen radical beam that is active in chemical reaction simultaneously with the ion beam, defects of selectively sputtered oxygen atoms can be immediately compensated simultaneously with the generation of vacancies by the high energy ion beam, It is possible to prevent characteristic deterioration due to composition change.
[0011]
In addition, the defect can be effectively compensated by making the oxygen radical concentration sufficiently higher than the evaporated metal concentration by 10 times or more.
[0012]
Moreover, the reaction between titanium atoms and ions is not caused by using ions as an inert gas such as a rare gas. Further, by making the irradiated ions argon, krypton, or xenon having a relatively heavy atomic weight, the effect of ejecting atoms by ions can be maximized.
[0013]
Further, by setting the value of [(ion atomic weight) × (acceleration voltage)] 1/2 that is a measure of the momentum of the ion beam to 130 or more, the effect of ejecting atoms by ions can be maximized. The impact strength of ions depends on their momentum. Accelerating voltage representing the ion energy (V acc) and the kinetic energy (mv 2/2, m: ion atomic mass, v: velocity) When the momentum mv is proportional to (mV acc) 1/2. Therefore, it can be seen that the value of (mV acc ) 1/2 is a guideline for measuring the atom popping effect.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an exemplary embodiment of the present invention will be described with reference to the drawings.
The present invention is carried out using a winding type vacuum vapor deposition apparatus as shown in FIG. This apparatus includes an unwinder (3) and a winder (4) for moving a polymer film (2) in a vacuum chamber (1), a coolable cooling can (5), and metal titanium as a deposition material. Or it is comprised from the evaporation source (7) holding titanium oxide (6), the radical beam generation source (8) introduced toward the polymer film base material (2), and the ion beam generation source (9).
[0015]
The polymer film (2) is supplied from the unwinder (3) along the cooling can (5) to form a titanium oxide thin film. The polymer film (2) on which the titanium oxide thin film is formed is wound up by a winder (4).
[0016]
As a polymer film (2) base material used for this invention, if it is a polymer film with a thickness of 10-200 micrometers, such as polyolefin, polyester, a polyimide, for example, it will not deviate from the objective of this invention.
[0017]
The evaporation source (7) for evaporating the vapor deposition material does not depart from the object of the present invention as long as it can evaporate a metal or metal oxide, such as a resistance heating method, an electron beam method, or a sputtering method.
[0018]
A method for forming the porous titanium oxide thin film coating film of the present invention performed using the above-described winding type vacuum vapor deposition apparatus will be described. First, titanium or titanium oxide (6), which is a vapor deposition material held in an evaporation source (7) installed at the lower part of a vacuum chamber (1) having a vacuum degree of 2 × 10 −4 Pa or less, is cooled with a cooling can (5 Evaporate towards the upper polymer film (2). On the other hand, oxygen radicals from the radical beam generation source (8) and rare gas ions from the ion beam generation source (7) are simultaneously irradiated toward the polymer film (2) to form a titanium oxide thin film.
[0019]
【Example】
Hereinafter, a preferred embodiment of the present invention will be described more specifically. The present invention is not limited to the following examples.
With the forming apparatus shown in FIG. 1, the vapor deposition material was metal titanium and evaporated by an electron beam at a constant rate of 0.1 nms −1 to form a titanium oxide thin film on the polyester film. At this time, the concentration of oxygen radicals irradiated on the substrate was fixed at 6 × 10 15 cm −2 s −1 . This corresponds to about 10 times the evaporated titanium atom concentration. The ion beam used was He, Ne, Ar, Kr, or Xe as a gas, the current density was fixed at 8 μA cm −2 , and the acceleration voltage V acc was changed in the range of 200 to 800 eV. No forced heating was applied to the polyester film as the base material. FIG. 2 shows the (mV acc ) 1/2 dependence of [(atomic weight) × (acceleration voltage)] 1/2 of the ion beam with respect to the film density of the titanium oxide thin film formed on the polyester film. From FIG. 2, the same (mV acc ) 1/2 dependency was recognized regardless of the type of rare gas. When the ion beam was not irradiated (mV acc ) 1/2 = 0, the film density was 3.8 gcm −3 . When (mV acc ) 1/2 is in the range of 50 to 130, the film density slightly increases up to 4.0 gcm −3, but the film density starts to decrease at 130 or more and reaches 2.5 cm −3 near 300. . Therefore, it was found that pore generation (porosification) of the titanium oxide thin film occurs effectively in the range (mV acc ) 1/2 of the above range. The chemical structure of the titanium oxide thin film produced at this time was completely oxidized. Thus, by changing (mV acc ) 1/2 , it became possible to control the porosity (porosity) of the titanium oxide thin film.
[0020]
When (mV acc ) 1/2 is 130 or more, acceleration voltages of He and Ne are required to be 4200 and 850 eV, respectively. However, it is difficult to generate an acceleration voltage of 800 eV or more with a normal ion beam generator. Therefore, Ar, Kr, and Xe are desirable as usable gases.
[0021]
【The invention's effect】
As described above, according to the method for forming a porous titanium oxide thin film-coated film of the present invention, a porous film having a low film density and minimizing deterioration and alteration with respect to a substrate having low heat resistance such as a polymer film. A high-quality titanium oxide thin film-coated film can be formed efficiently.
[0022]
Moreover, since the porous titanium oxide thin film-coated film can be formed on a polymer film unwound from a roll, continuous film formation with high throughput becomes possible.
[Brief description of the drawings]
FIG. 1 is a schematic view of a winding film forming apparatus for explaining an embodiment of the present invention.
FIG. 2 is a relationship diagram of the film density of a titanium oxide thin film with respect to (mV acc ) 1/2 which is [(ion atomic weight) × (acceleration voltage)] 1/2 in Example 1 of the present invention.
[Explanation of symbols]
1: Vacuum chamber 2: Polymer film 3: Unwinder 4: Winder 5: Cooling can 6: Deposition material 7: Evaporation source 8: Radical beam source 9: Ion beam source
Claims (3)
前記ポリマーフィルム基材に照射するイオンビームの［（イオン原子量）×（加速電圧）］ １／２ の値が１３０以上であることを特徴とする多孔性酸化チタン薄膜被覆フィルムの形成方法。Equipped with a winding device for winding a polymer film substrate, vaporizes metal titanium or titanium oxide from an evaporation source installed below the substrate, and simultaneously generates oxygen radicals and rare gases from a radical beam source and an ion beam source. A method for forming a porous titanium oxide thin film-covered film that irradiates ions and forms a titanium oxide thin film on the substrate ,
A method for forming a porous titanium oxide thin film-covered film, wherein the value of [(ion atomic weight) × (acceleration voltage)] 1/2 of the ion beam applied to the polymer film substrate is 130 or more .
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| CN102605333A (en) * | 2012-03-28 | 2012-07-25 | 中国矿业大学 | Preparation method for tantalum oxide film with high laser damage threshold under high-temperature environment |
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| JP4725701B2 (en) * | 2004-02-04 | 2011-07-13 | 株式会社ブリヂストン | Method for forming porous thin film |
| JP2006063382A (en) * | 2004-08-26 | 2006-03-09 | Kyoto Univ | Method for forming titanium oxide thin film on surface of substrate |
| US20210166946A1 (en) * | 2019-12-02 | 2021-06-03 | Applied Materials, Inc. | Apparatus and techniques for substrate processing using independent ion source and radical source |
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| CN102605333A (en) * | 2012-03-28 | 2012-07-25 | 中国矿业大学 | Preparation method for tantalum oxide film with high laser damage threshold under high-temperature environment |
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