JP4019993B2 - Semiconductor device - Google Patents

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JP4019993B2
JP4019993B2 JP2003093241A JP2003093241A JP4019993B2 JP 4019993 B2 JP4019993 B2 JP 4019993B2 JP 2003093241 A JP2003093241 A JP 2003093241A JP 2003093241 A JP2003093241 A JP 2003093241A JP 4019993 B2 JP4019993 B2 JP 4019993B2
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electrode
heat radiating
semiconductor device
control
switching element
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JP2004303854A (en
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賢次 八木
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【０００１】
【発明が属する技術分野】
本発明は、半導体スイッチング素子の両主面にそれぞれ電気的かつ熱的に接続された一対の放熱部材を備えてなり、当該両主面から放熱を行う半導体装置に関する。
【０００２】
【従来の技術】
半導体スイッチング素子の両主面から放熱を行う半導体装置には、例えば、一対の放熱部材（ヒートシンク）を、素子を挟む形で配置し、放熱部材間を樹脂でモールドしたものがある（下記特許文献１参照）。このような半導体装置は、代表的な半導体スイッチング素子（半導体パワー素子ともいう）であるＩＧＢＴ（Insulated Gate Bipolar Transistor）を例にすると、素子の２つの主面にそれぞれ露出するエミッタ電極及びコレクタ電極に、それぞれヒートシンクを直接、またはスペーサを介してそれぞれハンダ接続する。この場合のヒートシンクは、大電流経路としての機能も有する。一方、素子のゲート電極（制御用電極）と、モールド樹脂部の外部に延出する制御信号用リードとは、ボンディングワイヤにより導通接続される。そして、このような素子パッケージを複数組付けることにより、インバータ回路モジュールが作製され、モータ駆動等の用途に供される。
【０００３】
【特許文献１】
特開２００１−１５６２２５号公報
【０００４】
【発明が解決しようとする課題】
ところで、上記制御信号用リードは金属リードにて構成されており、またその端部はモールド樹脂部内にてボンディングワイヤにより接続されている。半導体装置は外部機器に組付けられるわけであるが、そのような金属リードの場合、外部に延出している部位を折曲げ加工し、ベンド形状にしてから外部機器に組付け（接続）しなければならず、またそのような形状のリードを人間の手により外部機器に組付けるのは困難であった。
【０００５】
また、ボンディングワイヤは、ワイヤ長が長くなるほど、樹脂モールド時に、隣接するボンディングワイヤ同士が接触したり、断線が生じたりする可能性が高くなる。素子の微細化と高電流密度化による発熱量の増大によってヒートシンクの大面積化が求められる今日においては、ワイヤ長が増大することが考えられるため、そのような接触や断線の問題は看過できなくなる。また、リードの一部がモールド樹脂部内に封入されているとしても、上記のような折曲げ加工や組付け時にリードに負荷が加わるため、それに接続されたボンディングワイヤにも負荷の一部が伝わり、断線が生じることも考えられる。このような要因により接続信頼性が悪化し、また製品の歩留まりが低下してしまうため、従来のようなボンディングワイヤによる接続構造をそのまま適用することには難がある。
【０００６】
従って、本発明の課題は、外部機器への組付けが容易で、且つ、歩留まりの向上した放熱部材付きの樹脂モールド半導体装置を提供することにある。
【０００７】
【課題を解決するための手段及び作用・発明の効果】
上記課題を解決するため、本発明の半導体装置では、
一方の主面側に第一電極及び制御用電極、他方の主面側に第二電極が露出した半導体スイッチング素子と、前記半導体スイッチング素子を挟む形で配置され、前記第一電極と前記第二電極とにそれぞれ電気的かつ熱的に接続される一対の放熱部材と、前記一対の放熱部材の間を充填するモールド樹脂部と、制御信号の入力に供され、且つ、外部に引き出される、表面が絶縁加工された可撓性配線基板と、を備える半導体装置であって、
前記半導体スイッチング素子の動作制御を行う制御回路部が、前記モールド樹脂部内に封入され、且つ、前記制御用電極から外部へと引き出される接続経路のいずれかの位置に介挿されており、
前記制御回路部は、前記可撓性配線基板に電子部品が実装されることによって構成され、
前記可撓性配線基板は前記制御回路部を有し、且つ、当該可撓性配線基板が前記制御用電極、もしくは該制御用電極に接続された通電部材の端子に導通接着されてなることを特徴とする。
【０００８】
上記本発明の半導体装置によると、上記のような制御信号用リードに代わり、表面が絶縁加工された可撓性の配線部材が配されている。また、配線部材は制御用電極、もしくは制御用電極に接続された通電部材の端子に導通接着されており、配線部材の接続にボンディングワイヤを使用していない構成となっている。また配線部材が可撓性であるため、内部の接続部に余計な負荷を与えることなく、外部機器への組付けを容易に行うことができる。さらに、配線部材は、電極又は端子に直接接着されているため、ボンディングワイヤによる接続の場合よりも接続信頼性を確保できる。
【０００９】
また、金属リードにボンディングワイヤが付された構成では、金属リードやボンディングワイヤと、放熱部材との間に短絡が生じる惧れがある。そのため、図６の従来の半導体装置１´の例に示されるように、金属リード１０５の先端は放熱部材２、３の端部付近に配されることになり、中心付近に素子１０が配された場合、接続距離、すなわちボンディングワイヤ１０７のワイヤ長を長くせざるを得ない。このことは、放熱部材２、３の大面積化が求められる今日においては致命的である。しかし、上記本発明では、配線部材は表面が絶縁加工されているため、放熱部材との接触を気にする必要がなく、放熱部材間に配線部材を引くことができる。したがって、電極もしくは端子の位置が放熱部材間の中心付近であっても、配線部材を放熱部材間の中心付近まで引き、直接接着することが可能となる。これにより、放熱部材の大面積化にも対応できる。
【００１０】
また、本発明の半導体装置では、第一電極に接続される放熱部材は、該第一電極に接続するための凸部が一体形成された構成することができる。半導体スイッチング素子において、第一電極側の主面には、第一電極に加えて制御用電極も露出している。そのため、第一電極に接続される放熱部材は、第一電極側の主面全体を覆うような形態とすることができず、第一電極側の主面のうち、露出する第一電極にのみに接続されるような形態でなければならない。したがって、従来の半導体装置では、図６に示すように、素子１０と放熱部材３との間に、素子１０の第一電極にのみ接触する形状のスペーサ１０３を挿入しているが、この場合、スペーサ１０３と放熱部材３との間の接合界面において、熱引きが良好に行われない問題が生じることがある。そこで、上記本発明のごとく、放熱部材に、第一電極に接続するための凸部を一体形成する（つまり、放熱部材３とスペーサ１０３とを一体形成する）ことで、そのような問題を解消することができる。また、一体形成することにより、部品点数を削減できるうえに、従来行われていた放熱部材３とスペーサ１０３との接合処理（例えば、ハンダリフロー処理）も削減できるので、コスト面においても改善される。
【００１１】
また、本発明の半導体装置では、放熱部材は、配線部材を絶縁接着して固定するための絶縁接着部を有し、配線部材は当該絶縁接着部に絶縁接着された構成とすることができる。配線部材は、上述のように表面が絶縁加工されているので、放熱部材との接触を気にする必要がない。そこで、放熱部材に、配線部材を何の支障もなく絶縁接着することができる。これにより、配線部材は固定され、電極もしくは端子に導通接着された部位に余計な負荷が加わることを防ぐことができる。
【００１２】
一般に半導体装置では、半導体スイッチング素子の動作制御を行う制御回路を構成して、インテリジェントパワーモジュール（ＩＰＭ）とすることができる。従来、そのような制御回路は半導体装置の外部に構成され、リード（制御信号用リード）を通じて制御用電極に制御信号を送っている。しかし、その場合、半導体スイッチング素子と、制御回路とが離れているため、制御信号の伝達を担う経路（配線長）が長く構成される。そのため、該経路がノイズの影響を受け易く、半導体スイッチング素子が誤動作を起こしてしまう場合がある。そこで、本発明の半導体装置では、半導体スイッチング素子の動作制御を行う制御回路部を、モールド樹脂部内に封入し、且つ、制御用電極から外部へと引き出される接続経路のいずれかの位置に介挿されるよう構成して、インテリジェントパワーモジュールとする。これにより、制御信号の伝達を担う経路が短縮され、ノイズによる素子の誤動作を低減することができる。なお、このような構成にすることで、放熱部材の大面積化に伴う、放熱部材間に生じるスペースを有効に活用することができる。
【００１３】
また、従来のように制御回路が外部に構成される場合には、半導体装置において、素子の制御用電極に接続されたリードが剥き出しであるため、製造時や組付け時等において、ハンドリングを行う人間が静電気を帯電していると、制御用電極に電圧が印加されてしまい、素子の劣化や破壊が生じてしまう場合がある。しかし、本発明の半導体装置の構成では、外部に引き出された配線部材は、制御回路部を介して素子の制御用電極に接続されているため、制御用電極が制御回路にて保護され、静電気が直接印加されることがなくなる。この結果、素子の劣化や破壊を防止することができ、歩留まり低下の防止に繋がる。
【００１４】
以下に、制御回路部がモールド樹脂部内に封入され、且つ、制御用電極から外部へと引き出される接続経路のいずれかの位置に介挿されている半導体装置の態様について説明する。まず一つ目の形態では、配線部材は制御回路部を有し、且つ、当該配線部材が制御用電極に導通接着された構成とすることができる。配線部材に制御回路部が形成されることにより、通電部材等を介さず、配線部材を制御用電極に直接導通接着することができる。具体的には、配線部材が可撓性配線基板として構成され、該可撓性配線基板に電子部品が実装されることにより制御回路部をなす。
【００１５】
二つ目の態様としては、通電部材は、第二電極に接続される放熱板に絶縁接着されてなるとともに、制御回路部を有し、且つ、配線部材が当該通電部材の端子に導通接着された構成とすることができる。これは、制御用電極と配線部材との間に制御回路部を有する通電部材が形成された構成であり、通電部材の一方の端子は制御用電極に、もう一方の端子は配線部材に接続される。具体的には、通電部材は配線基板部を備え、該配線基板部に電子部品が実装されることにより制御回路部をなす。
【００１６】
【発明の実施の形態】
（第１の実施形態）
図１に示すのは、本発明の半導体装置の第１実施形態であるパワーモジュール１の断面模式図である。パワーモジュール１は、半導体スイッチング素子１０（以下、単に半導体チップともいう）、一対の放熱部材２、３、モールド樹脂部４、配線部材５が一体化したものである。このようなパワーモジュール１は、例えばブラシレスモータ用の三相インバータ回路の一部を構成する。半導体チップ１０の種類は、例えばＩＧＢＴやパワーＭＯＳＦＥＴとすることができる。モータなどの誘導負荷に接続されるＩＧＢＴには、通常、フリーホイールダイオードが逆並列に接続されるが、図１中には表していない。
【００１７】
図５の拡大断面図に示すように、薄板状の半導体チップ１０は、一方の主面側に上記第一電極であるエミッタ電極１０ｅ（またはソース電極）及び制御用電極であるゲート電極１０ｇが露出し、他方の主面側に上記第二電極であるコレクタ電極１０ｃ（またはドレイン電極）が露出するように設計されている。ゲート電極１０ｇ、エミッタ電極１０ｅ及びコレクタ電極１０ｃには、Ｎｉ−Ａｕめっきなど、半田との濡れ性向上のための表面処理が施されている。エミッタ電極１０ｅ及びゲート電極１０ｇが露出形成されている主面側において、ゲート電極１０ｇ及びエミッタ電極１０ｅの非露出領域は、ポリイミド樹脂等などの絶縁保護膜１０ａに被覆されている。他方、反対側の主面では、全面にコレクタ電極１０ｃが露出している。
【００１８】
そして、半導体チップ１０において、コレクタ電極１０ｃにはコレクタ側放熱部材２が、エミッタ電極１０ｅにはエミッタ側放熱部材３が、例えばハンダからなる接合部材６により、それぞれ電気的かつ熱的に接続されている。各放熱部材２、３は、扁平状または板状の形態を有し、接合部材６を介して半導体チップ１０に接続される受熱面２２、３３、外部に露出した放熱面２１、３１を有する。これらの面はそれぞれ略平面であり、互いに略平行となっている。また、各放熱部材２、３には、モールド樹脂部４の外側に延出する大電流用のリード端子がそれぞれ形成されている（図示せず）。なお、各放熱部材２、３は、熱伝導性および電気伝導性の観点から、たとえばＣｕ、Ｗ、Ｍｏ、Ａｌのグループから選択される１種の金属材料、もしくはそれらの金属材料を主体とする合金により構成されることが好ましい。
【００１９】
また、半導体チップ１０の周側面を被覆するとともに、放熱部材２、３により形成される隙間を充填するようにモールド樹脂部４が設けられている。モールド樹脂部４は、たとえばエポキシ樹脂により構成される。
【００２０】
さらに、パワーモジュール１は、半導体チップ１０のゲート電極１０ｇに制御信号（チャネル切り換え信号）を供給するための配線部材５を有する。そして、以下のような接続形態とすることでボンディングワイヤによる接続を排している。配線部材５は、表面が絶縁加工された可撓性の部材によって構成されており、詳しくは、例えばポリイミドシート内にＣｕまたはＣｕ合金からなる配線パターンが形成されたもの（一般にフレキシブルリードと呼ばれる）を好適に用いることができる。このように配線部材５が可撓性であることから、外部機器（図示せず）への接続が容易となる。外部機器への接続は、図示しないが例えば、外部機器側にはピンを設けておき、配線部材５の外部に引き出された側の端部には該ピンと嵌合するソケットを設けておくことで、容易に接続できる。
【００２１】
また、配線部材５は、表面が絶縁加工されているので放熱部材２、３との接触を気にする必要がなく、放熱部材２、３の間に配することができる。したがって、配線部材２、３の中央付近に位置する半導体チップ１０の付近まで配線部材５を引き、ゲート電極１０ｇに配線部材５を直接導通接着することが可能となる。導通接着に関しては、配線部材５の内部配線を剥き出しにした部位と、ゲート電極１０ｇと、を例えば銀ロウからなる導通接合材７を介して接着することで実現できる。これにより、ボンディングワイヤによる接続の場合よりも良好な接続信頼性を得ることができる。
【００２２】
次に、エミッタ電極１０ｅに接続された放熱部材３は、エミッタ電極１０ｅに接続するための凸部３５が一体形成されている。上述のように、半導体チップ１０において、エミッタ電極１０ｅを有する主面には、エミッタ電極１０ｅに加えてゲート電極１０ｇも露出している。したがって、コレクタ電極１０ｃのように主面全域を放熱部材２が覆うような形態で接続することができない。このため、放熱部材３には、受熱面３３がエミッタ電極１０ｅの露出面に含まれるような形状となるように凸部３５が一体形成される。なお、受熱面がエミッタ電極１０ｅの露出面に含まれるような形状のスペーサ１０３（図６参照）を配して、エミッタ電極１０ｅと放熱部材２とを接続してもよい。
【００２３】
次に、エミッタ電極１０ｅに接続された放熱部材３は、配線部材５を絶縁接着して固定するための絶縁接着部３６を有する。そして、配線部材５は絶縁接着部３６に、例えばシリコーン樹脂からなる絶縁接着材８を介して絶縁接着されている。本実施形態では、絶縁接着を行う位置がゲート電極１０ｇに近く、絶縁接着部３６は凸部３５から張り出した形態となっているが、これに限られることはなく、個別に形成して絶縁接着を行っても良いし、またはコレクタ電極１０ｃに接続された放熱部材２に設けて絶縁接着してもよい。
【００２４】
以上のようなパワーモジュール１は、以下のような製造工程によって得られる。▲１▼放熱部材２と半導体チップ１０とを、受熱面２２とコレクタ電極１０ｃ側の主面とが対向するよう接合部材（ハンダ）６により固定する。▲２▼放熱部材３の絶縁接着部３６に配線部材５を絶縁接着材（シリコーン樹脂）８により絶縁接着、もしくは半導体チップ１０のゲート電極１０ｇに配線部材５を導通接着材（銀ロウ）７により導通接着する。▲３▼半導体チップ１０と放熱部材３とを、エミッタ電極１０ｅと凸部３５の受熱面３３とが対向するよう接合部材（ハンダ）６により固定する。▲４▼配線部材５を接着（▲２▼において配線部材５が、放熱部材３側に絶縁接着された場合には半導体チップ１０のゲート電極１０ｇに導通接着材７により導通接着、また、半導体チップ１０側に導通接着された場合には放熱部材３の絶縁接着部３６に絶縁接着材８により絶縁接着）する。▲５▼例えばエポキシ樹脂を放熱部材２、３の間に充填することでモールド樹脂部を形成する。以上によりパワーモジュール１が完成する。
【００２５】
（第２の実施形態）
図２に示すのは、本発明の半導体装置の第２実施形態であるインテリジェントパワーモジュール（以下、ＩＰＭとする）１の断面模式図である。以下、主として図１と異なるところを述べ、同一部分は図２中に同一符号を付して説明を簡略化する。図２に示すように、ＩＰＭ１では、モールド樹脂部４内に半導体チップ１の動作制御をおこなうための制御回路部９が封入されている。配線部材５は、例えばポリイミドシート内にＣｕまたはＣｕ合金からなる配線パターンが形成された可撓性（フレキシブル）配線基板にて構成され、そして当該基板上において制御回路部９が実現されている。詳しくは、可撓性配線基板（配線部材）５の実装面に、電子部品（ゲートドライブＩＣ等の能動素子）９１や、チップ抵抗、チップコンデンサ等の受動素子（配線部材５内に組込まれる場合もあるのでここでは図示しない）が実装されることにより、所定の回路が実現し、制御回路部９をなしている。以上のようにして、制御回路部９が、モールド樹脂部４内に封入され、且つ、ゲート電極１０ｇから外部へと引き出される接続経路の途中に介挿された構造が得られる。なお、制御回路部９は例えば、公知のＩＧＢＴのゲート駆動回路や、ＩＧＢＴの過電流、過熱を検出して保護の為の動作をする回路として構成される。また、本実施形態では、制御回路部９は、配線部材５の放熱部材２、３間の領域内に形成されているが、図３のように放熱部材２、３間の領域外で、且つ、モールド樹脂部４内に納まるように形成することもできる。
【００２６】
（第３の実施形態）
図４に示すのは、本発明の半導体装置の第３実施形態であるインテリジェントパワーモジュール（ＩＰＭ）１の断面模式図である。以下、主として図１と異なるところを述べ、同一部分は図４中に同一符号を付して説明を簡略化する。図４に示すように、本実施形態のＩＰＭ１でも、上記の第２実施形態と同様に、モールド樹脂部４内に半導体チップ１の動作制御をおこなうための制御回路部９が封入されている。詳しくは、放熱部材２の放熱面２１とは逆側の面（受熱面）２２の半導体チップ１０が接合されていない領域に、例えばシリコーン樹脂（接着剤）からなる絶縁層１０８を介して、配線基板部９２が固定（絶縁接着）されており、該配線基板部９２に電子部品９１が実装されることにより制御回路部９をなす。なお、制御回路部９は、上記の第２実施形態の場合と同様の回路構成とされている。そして、配線基板部９２の片方の端子は、半導体チップ１０のゲート電極１０ｇにボンディングワイヤ１０７により接続されており、もう片方の端子には配線部材５が導通接着材（銀ロウ）７を介して導通接着されている。ここでのボンディングワイヤ１０７は、互いに近接して各々固定された半導体チップ１０と配線基板部９２とを接続するものであるので、上記のような問題は生じない。以上のようにして、制御回路部９が、モールド樹脂部４内に封入され、且つ、ゲート電極１０ｇから外部へと引き出される接続経路の途中に介挿された構造が得られる。なお、ここでは、制御回路部９とは上記通電部材を兼ねるものとする。
【図面の簡単な説明】
【図１】第１実施形態の半導体装置（パワーモジュール）の断面構造を表す模式図
【図２】第２実施形態の半導体装置（インテリジェントパワーモジュール）の断面構造を表す模式図
【図３】図２の第２実施形態の変形例を表す図
【図４】第３実施形態の半導体装置（インテリジェントパワーモジュール）の断面構造を表す模式図
【図５】半導体スイッチング素子１０の断面構造を表す模式図
【図６】従来の半導体装置の断面構造を表す模式図
【符号の説明】
１ 半導体装置
２ 放熱部材（コレクタ電極１０ｃ側）
３ 放熱部材（エミッタ電極１０ｅ側）
３５ 凸部
３６ 絶縁接着部
４ モールド樹脂部
５ 配線部材
６ 接合部材
７ 導通接着材
８ 絶縁接着材
９ 制御回路部
９１ 電子部品
１０ 半導体スイッチング素子（半導体チップ）
１０ｃ コレクタ電極
１０ｅ エミッタ電極
１０ｇ ゲート電極[0001]
[Technical field to which the invention belongs]
The present invention relates to a semiconductor device that includes a pair of heat dissipating members electrically and thermally connected to both main surfaces of a semiconductor switching element and radiates heat from both main surfaces.
[0002]
[Prior art]
A semiconductor device that radiates heat from both main surfaces of a semiconductor switching element includes, for example, a pair of heat radiating members (heat sinks) arranged with an element sandwiched between them and molded between the heat radiating members with resin (the following patent documents) 1). In such a semiconductor device, when an IGBT (Insulated Gate Bipolar Transistor), which is a typical semiconductor switching element (also referred to as a semiconductor power element), is taken as an example, an emitter electrode and a collector electrode exposed on two main surfaces of the element are respectively used. Each of the heat sinks is soldered directly or via a spacer. The heat sink in this case also has a function as a large current path. On the other hand, the gate electrode (control electrode) of the element and the control signal lead extending to the outside of the mold resin portion are conductively connected by a bonding wire. Then, by assembling a plurality of such element packages, an inverter circuit module is manufactured and used for applications such as motor drive.
[0003]
[Patent Document 1]
Japanese Patent Laid-Open No. 2001-156225
[Problems to be solved by the invention]
By the way, the control signal lead is constituted by a metal lead, and its end is connected by a bonding wire in the mold resin portion. Semiconductor devices can be assembled to external equipment, but in the case of such metal leads, the parts extending to the outside must be bent to bend and then assembled (connected) to the external equipment. In addition, it is difficult to assemble a lead having such a shape to an external device by a human hand.
[0005]
Further, the longer the wire length of the bonding wire, the higher the possibility that adjacent bonding wires come into contact with each other or breakage occurs during resin molding. In today's world where heat sinks are required to increase in area due to increased heat generation due to device miniaturization and higher current density, the wire length can be increased, so such problems of contact and disconnection cannot be overlooked. . Even if a part of the lead is enclosed in the mold resin part, a load is applied to the lead during the bending process and assembly as described above, so a part of the load is also transmitted to the bonding wire connected to it. It is also conceivable that disconnection occurs. Due to such factors, the connection reliability is deteriorated and the yield of the product is lowered. Therefore, it is difficult to apply the conventional connection structure using bonding wires as it is.
[0006]
Accordingly, an object of the present invention is to provide a resin molded semiconductor device with a heat radiating member that can be easily assembled to an external device and has improved yield.
[0007]
[Means for solving the problems and functions / effects of the invention]
In order to solve the above problems, in the semiconductor device of the present invention,
The first electrode and the control electrode on one main surface side, the semiconductor switching element with the second electrode exposed on the other main surface side, and the semiconductor switching element are arranged to sandwich the first electrode and the second electrode A pair of heat radiating members that are electrically and thermally connected to the electrodes, a mold resin portion that fills the space between the pair of heat radiating members , and a surface that is used for input of control signals and is drawn to the outside. A semiconductor device comprising a flexible wiring board subjected to insulation processing ,
A control circuit unit for controlling the operation of the semiconductor switching element is enclosed in the mold resin unit, and is inserted in any position of a connection path drawn out from the control electrode,
The control circuit unit is configured by mounting electronic components on the flexible wiring board,
The flexible wiring board includes the control circuit unit, and the flexible wiring board is conductively bonded to the control electrode or a terminal of a current-carrying member connected to the control electrode. Features.
[0008]
According to the semiconductor device of the present invention, instead of the control signal lead as described above, a flexible wiring member whose surface is insulated is disposed. Further, the wiring member is conductively bonded to the control electrode or the terminal of the energizing member connected to the control electrode, and does not use a bonding wire for connecting the wiring member. Further, since the wiring member is flexible, it can be easily assembled to an external device without applying an extra load to the internal connection portion. Furthermore, since the wiring member is directly bonded to the electrode or the terminal, connection reliability can be ensured as compared with the case of connection using a bonding wire.
[0009]
Further, in the configuration in which the bonding wire is attached to the metal lead, there is a concern that a short circuit may occur between the metal lead or the bonding wire and the heat dissipation member. Therefore, as shown in the example of the conventional semiconductor device 1 ′ in FIG. 6, the tips of the metal leads 105 are arranged near the ends of the heat radiating members 2 and 3, and the element 10 is arranged near the center. In this case, the connection distance, that is, the wire length of the bonding wire 107 must be increased. This is fatal in the present day when the heat dissipation members 2 and 3 are required to have a large area. However, in the present invention, since the surface of the wiring member is insulated, there is no need to worry about contact with the heat radiating member, and the wiring member can be drawn between the heat radiating members. Therefore, even if the position of the electrode or terminal is near the center between the heat radiating members, the wiring member can be drawn to the vicinity of the center between the heat radiating members and directly bonded. Thereby, it can respond also to the enlargement of a heat radiating member.
[0010]
In the semiconductor device of the present invention, the heat dissipation member connected to the first electrode can be configured such that a convex portion for connecting to the first electrode is integrally formed. In the semiconductor switching element, the control electrode is exposed in addition to the first electrode on the main surface on the first electrode side. Therefore, the heat dissipation member connected to the first electrode cannot be configured to cover the entire main surface on the first electrode side, but only on the exposed first electrode among the main surfaces on the first electrode side. It must be in a form that can be connected to. Therefore, in the conventional semiconductor device, as shown in FIG. 6, the spacer 103 having a shape that contacts only the first electrode of the element 10 is inserted between the element 10 and the heat radiating member 3. There may be a problem that heat is not satisfactorily performed at the bonding interface between the spacer 103 and the heat dissipation member 3. Therefore, as in the above-described present invention, the projecting portion for connecting to the first electrode is integrally formed on the heat radiating member (that is, the heat radiating member 3 and the spacer 103 are integrally formed), thereby solving such a problem. can do. In addition, by integrally forming, the number of parts can be reduced, and the conventional joining process (for example, solder reflow process) between the heat radiating member 3 and the spacer 103 can be reduced, so that the cost can be improved. .
[0011]
In the semiconductor device of the present invention, the heat dissipation member may have an insulating adhesive portion for insulating and fixing the wiring member, and the wiring member may be insulatively bonded to the insulating adhesive portion. Since the surface of the wiring member is insulated as described above, there is no need to worry about contact with the heat dissipation member. Therefore, the wiring member can be insulated and bonded to the heat radiating member without any trouble. As a result, the wiring member is fixed, and an extra load can be prevented from being applied to the portion that is conductively bonded to the electrode or the terminal.
[0012]
In general, a semiconductor device can be configured as an intelligent power module (IPM) by configuring a control circuit for controlling the operation of a semiconductor switching element. Conventionally, such a control circuit is configured outside a semiconductor device, and sends a control signal to a control electrode through a lead (control signal lead). However, in that case, since the semiconductor switching element and the control circuit are separated from each other, a path (wiring length) for transmitting the control signal is configured to be long. For this reason, the path is susceptible to noise, and the semiconductor switching element may malfunction. Therefore, in the semiconductor device of the present invention, the control circuit unit that controls the operation of the semiconductor switching element is enclosed in the mold resin unit, and is inserted in any position of the connection path drawn out from the control electrode. To be an intelligent power module. As a result, the path for transmitting the control signal is shortened, and malfunction of the element due to noise can be reduced. In addition, by setting it as such a structure, the space which arises between the heat radiating members accompanying the enlargement of a heat radiating member can be utilized effectively.
[0013]
Further, when the control circuit is configured externally as in the prior art, in the semiconductor device, the lead connected to the control electrode of the element is exposed, so that handling is performed at the time of manufacture or assembly. When a human is charged with static electricity, a voltage is applied to the control electrode, which may cause deterioration or destruction of the element. However, in the configuration of the semiconductor device of the present invention, the wiring member drawn to the outside is connected to the control electrode of the element through the control circuit unit, so that the control electrode is protected by the control circuit, Is no longer applied directly. As a result, deterioration and destruction of the element can be prevented, leading to prevention of yield reduction.
[0014]
Hereinafter, an aspect of the semiconductor device in which the control circuit portion is sealed in the mold resin portion and inserted in any position of the connection path drawn out from the control electrode to the outside will be described. First, in the first embodiment, the wiring member may have a control circuit portion, and the wiring member may be conductively bonded to the control electrode. By forming the control circuit portion on the wiring member, the wiring member can be directly conductively bonded to the control electrode without using an energizing member or the like. Specifically, the wiring member is configured as a flexible wiring board, and an electronic component is mounted on the flexible wiring board to form a control circuit unit.
[0015]
As a second aspect, the energizing member is insulated and bonded to the heat radiating plate connected to the second electrode, and has a control circuit portion, and the wiring member is conductively bonded to the terminal of the energizing member. Can be configured. This is a configuration in which a current-carrying member having a control circuit portion is formed between the control electrode and the wiring member, and one terminal of the current-carrying member is connected to the control electrode and the other terminal is connected to the wiring member. The Specifically, the energizing member includes a wiring board portion, and an electronic component is mounted on the wiring board portion to form a control circuit portion.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
(First embodiment)
FIG. 1 is a schematic cross-sectional view of a power module 1 which is a first embodiment of a semiconductor device of the present invention. The power module 1 includes a semiconductor switching element 10 (hereinafter also simply referred to as a semiconductor chip), a pair of heat radiation members 2 and 3, a mold resin portion 4, and a wiring member 5. Such a power module 1 constitutes a part of a three-phase inverter circuit for a brushless motor, for example. The type of the semiconductor chip 10 can be, for example, an IGBT or a power MOSFET. A freewheel diode is normally connected in antiparallel to an IGBT connected to an inductive load such as a motor, but is not shown in FIG.
[0017]
As shown in the enlarged sectional view of FIG. 5, in the thin plate-like semiconductor chip 10, the emitter electrode 10e (or source electrode) as the first electrode and the gate electrode 10g as the control electrode are exposed on one main surface side. In addition, the collector electrode 10c (or the drain electrode) which is the second electrode is designed to be exposed on the other main surface side. The gate electrode 10g, the emitter electrode 10e, and the collector electrode 10c are subjected to surface treatment for improving wettability with solder such as Ni—Au plating. On the main surface side where the emitter electrode 10e and the gate electrode 10g are exposed, the unexposed regions of the gate electrode 10g and the emitter electrode 10e are covered with an insulating protective film 10a such as polyimide resin. On the other hand, the collector electrode 10c is exposed on the entire main surface on the opposite side.
[0018]
In the semiconductor chip 10, the collector-side heat dissipation member 2 is connected to the collector electrode 10 c, and the emitter-side heat dissipation member 3 is connected to the emitter electrode 10 e, for example, by a joining member 6 made of solder. Yes. Each of the heat radiating members 2 and 3 has a flat shape or a plate shape, and has heat receiving surfaces 22 and 33 connected to the semiconductor chip 10 through the bonding member 6 and heat radiating surfaces 21 and 31 exposed to the outside. Each of these surfaces is a substantially flat surface and is substantially parallel to each other. Further, each of the heat dissipating members 2 and 3 is formed with a lead terminal for a large current extending outside the mold resin portion 4 (not shown). Each of the heat dissipating members 2 and 3 is mainly composed of, for example, one type of metal material selected from the group of Cu, W, Mo, and Al, or those metal materials from the viewpoint of thermal conductivity and electrical conductivity It is preferable to be composed of an alloy.
[0019]
A mold resin portion 4 is provided so as to cover the peripheral side surface of the semiconductor chip 10 and to fill a gap formed by the heat radiating members 2 and 3. The mold resin portion 4 is made of, for example, an epoxy resin.
[0020]
Furthermore, the power module 1 includes a wiring member 5 for supplying a control signal (channel switching signal) to the gate electrode 10g of the semiconductor chip 10. And the connection by a bonding wire is eliminated by setting it as the following connection forms. The wiring member 5 is composed of a flexible member whose surface is insulated. Specifically, for example, a wiring sheet made of Cu or Cu alloy is formed in a polyimide sheet (generally called a flexible lead). Can be suitably used. Since the wiring member 5 is flexible in this way, connection to an external device (not shown) is facilitated. For connection to an external device, although not shown, for example, a pin is provided on the external device side, and a socket that fits the pin is provided at the end of the wiring member 5 on the side pulled out. Easy to connect.
[0021]
Moreover, since the surface of the wiring member 5 is insulated, it is not necessary to worry about contact with the heat radiating members 2 and 3, and can be arranged between the heat radiating members 2 and 3. Therefore, the wiring member 5 can be drawn to the vicinity of the semiconductor chip 10 located near the center of the wiring members 2 and 3 and the wiring member 5 can be directly conductively bonded to the gate electrode 10g. The conductive bonding can be realized by bonding a portion where the internal wiring of the wiring member 5 is exposed to the gate electrode 10g through a conductive bonding material 7 made of, for example, silver solder. Thereby, connection reliability better than the case of the connection by a bonding wire can be obtained.
[0022]
Next, the heat radiation member 3 connected to the emitter electrode 10e is integrally formed with a convex portion 35 for connection to the emitter electrode 10e. As described above, in the semiconductor chip 10, in addition to the emitter electrode 10e, the gate electrode 10g is exposed on the main surface having the emitter electrode 10e. Therefore, it is impossible to connect in a form in which the heat radiation member 2 covers the entire main surface like the collector electrode 10c. Therefore, the protrusion 35 is integrally formed on the heat radiating member 3 so that the heat receiving surface 33 is included in the exposed surface of the emitter electrode 10e. The emitter electrode 10e and the heat dissipation member 2 may be connected by providing a spacer 103 (see FIG. 6) having a shape such that the heat receiving surface is included in the exposed surface of the emitter electrode 10e.
[0023]
Next, the heat radiating member 3 connected to the emitter electrode 10e has an insulating bonding portion 36 for fixing the wiring member 5 by insulating bonding. The wiring member 5 is insulatively bonded to the insulating adhesive portion 36 via an insulating adhesive 8 made of, for example, a silicone resin. In the present embodiment, the position for performing the insulating bonding is close to the gate electrode 10g, and the insulating bonding portion 36 protrudes from the convex portion 35. However, the present invention is not limited to this. Alternatively, the heat radiation member 2 connected to the collector electrode 10c may be provided and insulated.
[0024]
The power module 1 as described above is obtained by the following manufacturing process. (1) The heat radiating member 2 and the semiconductor chip 10 are fixed by a joining member (solder) 6 so that the heat receiving surface 22 and the main surface on the collector electrode 10c side face each other. (2) The wiring member 5 is insulated and bonded to the insulating bonding portion 36 of the heat radiating member 3 by an insulating adhesive (silicone resin) 8, or the wiring member 5 is bonded to the gate electrode 10g of the semiconductor chip 10 by a conductive adhesive (silver solder) 7. Conductive bonding. (3) The semiconductor chip 10 and the heat dissipation member 3 are fixed by a joining member (solder) 6 so that the emitter electrode 10e and the heat receiving surface 33 of the convex portion 35 face each other. (4) Bonding the wiring member 5 (In the case of (2), when the wiring member 5 is insulatively bonded to the heat radiating member 3 side, it is conductively bonded to the gate electrode 10g of the semiconductor chip 10 by the conductive adhesive 7; When conductively bonded to the 10 side, the insulating bonding material 36 is insulated and bonded to the insulating bonding portion 36 of the heat radiating member 3. {Circle around (5)} The mold resin portion is formed by, for example, filling an epoxy resin between the heat radiation members 2 and 3. Thus, the power module 1 is completed.
[0025]
(Second Embodiment)
FIG. 2 is a schematic cross-sectional view of an intelligent power module (hereinafter referred to as IPM) 1 which is a second embodiment of the semiconductor device of the present invention. In the following, differences from FIG. 1 will be mainly described, and the same parts will be denoted by the same reference numerals in FIG. 2 to simplify the description. As shown in FIG. 2, in the IPM 1, a control circuit portion 9 for controlling the operation of the semiconductor chip 1 is enclosed in the mold resin portion 4. The wiring member 5 is configured by a flexible wiring board in which a wiring pattern made of Cu or Cu alloy is formed in a polyimide sheet, for example, and the control circuit unit 9 is realized on the board. Specifically, the electronic component (an active element such as a gate drive IC) 91 or a passive element such as a chip resistor or a chip capacitor (when incorporated in the wiring member 5) is mounted on the mounting surface of the flexible wiring board (wiring member) 5. Therefore, a predetermined circuit is realized and the control circuit unit 9 is formed. As described above, a structure is obtained in which the control circuit portion 9 is enclosed in the mold resin portion 4 and is inserted in the middle of a connection path drawn out from the gate electrode 10g to the outside. The control circuit unit 9 is configured as, for example, a known IGBT gate drive circuit, or a circuit that detects an overcurrent or overheat of the IGBT and performs an operation for protection. Further, in the present embodiment, the control circuit unit 9 is formed in the region between the heat radiation members 2 and 3 of the wiring member 5, but outside the region between the heat radiation members 2 and 3 as shown in FIG. Further, it can be formed so as to be accommodated in the mold resin portion 4.
[0026]
(Third embodiment)
FIG. 4 is a schematic cross-sectional view of an intelligent power module (IPM) 1 that is the third embodiment of the semiconductor device of the present invention. In the following, differences from FIG. 1 will be mainly described, and the same parts are denoted by the same reference numerals in FIG. 4 to simplify the description. As shown in FIG. 4, also in the IPM 1 of the present embodiment, a control circuit unit 9 for controlling the operation of the semiconductor chip 1 is enclosed in the mold resin unit 4 as in the second embodiment. Specifically, wiring is provided via an insulating layer 108 made of, for example, a silicone resin (adhesive) in a region where the semiconductor chip 10 is not bonded to the surface (heat receiving surface) 22 opposite to the heat radiating surface 21 of the heat radiating member 2. The substrate portion 92 is fixed (insulated and bonded), and the electronic component 91 is mounted on the wiring substrate portion 92 to form the control circuit portion 9. The control circuit unit 9 has the same circuit configuration as that in the second embodiment. One terminal of the wiring board 92 is connected to the gate electrode 10 g of the semiconductor chip 10 by a bonding wire 107, and the wiring member 5 is connected to the other terminal via a conductive adhesive (silver solder) 7. Conductive bonding. The bonding wires 107 here connect the semiconductor chip 10 and the wiring board 92 that are fixed in close proximity to each other, so that the above problems do not occur. As described above, a structure is obtained in which the control circuit portion 9 is enclosed in the mold resin portion 4 and is inserted in the middle of a connection path drawn out from the gate electrode 10g to the outside. Here, the control circuit unit 9 also serves as the energizing member.
[Brief description of the drawings]
FIG. 1 is a schematic diagram illustrating a cross-sectional structure of a semiconductor device (power module) according to a first embodiment. FIG. 2 is a schematic diagram illustrating a cross-sectional structure of a semiconductor device (intelligent power module) according to a second embodiment. FIG. 4 is a schematic diagram illustrating a cross-sectional structure of a semiconductor device (intelligent power module) according to a third embodiment. FIG. 5 is a schematic diagram illustrating a cross-sectional structure of a semiconductor switching element 10. FIG. 6 is a schematic diagram showing a cross-sectional structure of a conventional semiconductor device.
1 Semiconductor Device 2 Heat Dissipation Member (Collector Electrode 10c Side)
3 Heat dissipation member (emitter electrode 10e side)
35 Convex part 36 Insulating adhesive part 4 Mold resin part 5 Wiring member 6 Joining member 7 Conductive adhesive 8 Insulating adhesive 9 Control circuit part 91 Electronic component 10 Semiconductor switching element (semiconductor chip)
10c Collector electrode 10e Emitter electrode 10g Gate electrode

Claims (4)

一方の主面側に第一電極及び制御用電極、他方の主面側に第二電極が露出した半導体スイッチング素子と、前記半導体スイッチング素子を挟む形で配置され、前記第一電極と前記第二電極とにそれぞれ電気的かつ熱的に接続される一対の放熱部材と、前記一対の放熱部材の間を充填するモールド樹脂部と、制御信号の入力に供され、且つ、外部に引き出される、表面が絶縁加工された可撓性配線基板と、を備える半導体装置であって、
前記半導体スイッチング素子の動作制御を行う制御回路部が、前記モールド樹脂部内に封入され、且つ、前記制御用電極から外部へと引き出される接続経路のいずれかの位置に介挿されており、
前記制御回路部は、前記可撓性配線基板に電子部品が実装されることによって構成され、
前記可撓性配線基板は前記制御回路部を有し、且つ、当該可撓性配線基板が前記制御用電極、もしくは該制御用電極に接続された通電部材の端子に導通接着されてなることを特徴とする半導体装置。The first electrode and the control electrode on one main surface side, the semiconductor switching element with the second electrode exposed on the other main surface side, and the semiconductor switching element are arranged to sandwich the first electrode and the second electrode A pair of heat radiating members that are electrically and thermally connected to the electrodes, a mold resin portion that fills the space between the pair of heat radiating members , and a surface that is used for input of control signals and is drawn to the outside. A semiconductor device comprising a flexible wiring board subjected to insulation processing ,
A control circuit unit for controlling the operation of the semiconductor switching element is enclosed in the mold resin unit, and is inserted in any position of a connection path drawn out from the control electrode,
The control circuit unit is configured by mounting electronic components on the flexible wiring board,
The flexible wiring board includes the control circuit unit, and the flexible wiring board is conductively bonded to the control electrode or a terminal of a current-carrying member connected to the control electrode. A featured semiconductor device. 一方の主面側に第一電極及び制御用電極、他方の主面側に第二電極が露出した半導体スイッチング素子と、前記半導体スイッチング素子を挟む形で配置され、前記第一電極と前記第二電極とにそれぞれ電気的かつ熱的に接続される一対の放熱部材と、前記一対の放熱部材の間を充填するモールド樹脂部と、制御信号の入力に供され、且つ、外部に引き出される、表面が絶縁加工された可撓性の配線部材と、電子部品が実装された配線基板部を有する通電部材と、を備える半導体装置であって、
前記配線基板部は、前記半導体スイッチング素子の動作制御を行う制御回路部であり、前記モールド樹脂部内に封入され、且つ、前記制御用電極から外部へと引き出される接続経路のいずれかの位置に介挿されており、
前記配線部材は、前記制御用電極、もしくはその制御用電極に接続された前記通電部材の端子に導通接着されており、
その通電部材は、前記第二電極に接続される前記放熱板に絶縁接着されてなり、且つ、前記配線部材がその通電部材の端子に導通接着されることを特徴とする半導体装置。 The first electrode and the control electrode on one main surface side, the semiconductor switching element with the second electrode exposed on the other main surface side, and the semiconductor switching element are arranged to sandwich the first electrode and the second electrode A pair of heat radiating members that are electrically and thermally connected to the electrodes, a mold resin portion that fills the space between the pair of heat radiating members, and a surface that is used for input of control signals and is drawn to the outside. Is a semiconductor device comprising a flexible wiring member that is insulated and an energization member having a wiring board portion on which electronic components are mounted,
The wiring board part is a control circuit part for controlling the operation of the semiconductor switching element, and is interposed in any position of a connection path enclosed in the mold resin part and drawn out from the control electrode. Inserted,
The wiring member is conductively bonded to the control electrode or a terminal of the energization member connected to the control electrode,
Its current-carrying member, the said heat dissipation plate will be insulating adhesive which is connected to the second electrode, and a semi-conductor device wherein the wiring member you characterized Rukoto is conductive adhesion to terminals of the current-carrying member. 前記第一電極に接続される前記放熱部材は、該第一電極に接続するための凸部が一体形成されてなることを特徴とする請求項１または２に記載の半導体装置。The semiconductor device according to claim 1 , wherein the heat radiating member connected to the first electrode is integrally formed with a protrusion for connecting to the first electrode . 前記放熱部材は、前記配線部材を絶縁接着して固定するための絶縁接着部を有し、前記配線部材は当該絶縁接着部に絶縁接着されてなることを特徴とする請求項１ないし３のいずれか１項に記載の半導体装置。 The heat dissipation member has an insulating adhesive portion for fixing the wiring member insulating adhesive to the wiring member according to claim 1, wherein the Rukoto such are insulated adhered to the insulating adhesive section The semiconductor device according to any one of the above.
JP2003093241A 2003-03-31 2003-03-31 Semiconductor device Expired - Fee Related JP4019993B2 (en)

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