JP4019317B2 - Solid-state imaging device and driving method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a solid-state imaging device and a driving method thereof. Specifically, the present invention relates to a solid-state imaging device in which a horizontal overflow drain is disposed between a first linear sensor and a second linear sensor, and a driving method thereof.
[0002]
[Prior art]
Pixels that are made up of photodiodes that accumulate signal charges in an amount corresponding to input light are one-dimensionally arranged, and signal charges from these pixels are transferred to the output unit side by a charge transfer method of a CCD (Charge coupled device). A CCD linear sensor having a transfer unit is used in many fields such as copying, facsimile, OCR, pattern recognition, and various measurements.
Hereinafter, a conventional solid-state imaging device will be described with reference to the drawings.
[0003]
FIG. 5 is a schematic configuration diagram for explaining a conventional CCD solid-state imaging device, and FIG. 6 is a schematic sectional view for explaining a conventional CCD solid-state imaging device. The first CCD linear sensor 102 in the CCD solid-state imaging device 101 shown here has a first sensor array 104 in which a large number of photoelectric conversion units (pixels) 103 made of photodiodes are linearly arranged. On one side of one sensor row, a first readout gate 105 that reads out signal charges photoelectrically converted by each photoelectric conversion unit and a signal charge that is read out by the first readout gate are transferred to the output unit side. One charge transfer register 106 is provided, and a first overflow control barrier 107 and an overflow drain 108 are disposed on the other side of the first sensor array.
[0004]
Further, the second CCD linear sensor 109 in the conventional CCD solid-state imaging device is a first CCD linear sensor in which a number of photoelectric conversion units (pixels) each including a photodiode are linearly arranged in the same manner as the first CCD linear sensor described above. Two sensor rows 110 are provided, and one side of the second sensor row 110 is read by a second read gate 111 for reading signal charges photoelectrically converted by each photoelectric conversion unit and the second read gate. The second charge transfer register 112 for transferring the signal charge to the output unit side is provided, and the second overflow control barrier 113 and the overflow drain are arranged on the other side of the second sensor row. It is configured. In the conventional CCD solid-state imaging device, the first CCD linear sensor includes the light shielding film 114 in which the first sensor row region in the first CCD linear sensor and the second sensor row region in the second CCD linear sensor are opened. And it is arrange | positioned above the 2nd CCD linear sensor (for example, refer patent document 1).
[0005]
In the first CCD linear sensor configured as described above, the signal charge accumulated in each photoelectric conversion unit of the first sensor array in accordance with the input light is transmitted through the first readout gate. The signal charges read out to the transfer register are sequentially transferred by the first charge transfer register, then converted into a signal voltage by the first charge-voltage converter 115, and further, a first amplifier comprising an amplifier or the like. Through the output circuit 116, the signal output OUT1. Note that the signal charge overflowing the first overflow control barrier is discarded to the overflow drain.
[0006]
Further, in the second CCD linear sensor configured as described above, similarly to the first CCD linear sensor described above, the signal charges accumulated in the respective photoelectric conversion units of the second sensor array in accordance with the input light. Is read to the second charge transfer register through the second read gate, and the read signal charges are sequentially transferred by the second charge transfer register, and then in the second charge voltage converter 117. The signal is converted into a signal voltage, and further becomes a signal output OUT2 through a second output circuit 118 including an amplifier or the like. Note that the signal charge overflowing the second overflow control barrier is discarded to the overflow drain shared with the first CCD linear sensor.
[0007]
Here, in the CCD solid-state imaging device described above, an overflow drain is provided between the first sensor row and the second sensor row so that the signal charge overflowing the overflow control barrier can be discarded to the overflow drain. Since it is configured, it is possible to ensure the overflow margin of the sensor array.
[0008]
[Patent Document 1]
JP-A-9-162381 (page 2-5, FIG. 1)
[0009]
[Problems to be solved by the invention]
However, in the conventional CCD solid-state imaging device described above, even if the first CCD linear sensor and the second CCD linear sensor are arranged adjacent to each other, the first CCD linear sensor and the second CCD linear sensor Since an overflow drain is disposed between the first CCD linear sensor and the second CCD linear sensor, a gap corresponding to at least the width of the overflow drain is formed in the first CCD linear sensor and the CCD solid-state imaging device. There arises a disadvantage that the sub-scan control is complicated.
[0010]
Hereinafter, a CCD solid-state imaging device in which the sum of the width of the first overflow control barrier, the width of the second overflow control barrier, and the width of the overflow drain is the same as the width d of the first sensor row and the second sensor row 7 exemplifies a case where imaging is performed by sub-scanning the imaging area indicated by reference numeral A in FIG. 7 in the direction indicated by reference numeral B in FIG. 7, and the first CCD linear sensor and the first CCD linear sensor are referred to with reference to FIG. The inconvenience caused by the fact that the second CCD linear sensor cannot be disposed adjacent to the second CCD linear sensor will be described. 7 and 8, reference numerals (1) to (8) represent areas obtained by dividing the imaging area for each distance d.
[0011]
When imaging is performed using a CCD solid-state imaging device having a gap of a distance d between the first CCD linear sensor and the second CCD linear sensor, first, the time t ₁ As shown in FIG. 8 [1] in FIG. 8A, the first CCD linear sensor indicates the area indicated by reference numeral (3) in FIG. 8 [1], and the second CCD linear sensor in FIG. 8 [1]. The area indicated by reference numeral (1) is imaged.
[0012]
Next, the CCD solid-state imaging device is sub-scanned at a distance d, and time t ₂ In FIG. 8 [1], as shown by (b) in FIG. 8 [1], the first CCD linear sensor shows the area indicated by reference numeral (4) in FIG. 8 [1], and the second CCD linear sensor shows in FIG. 8 [1]. The area indicated by reference numeral (2) is imaged.
[0013]
Subsequently, the CCD solid-state imaging device is sub-scanned at a distance of 3d, and time t ₃ In FIG. 8 [1], as shown by (c) in FIG. 8 [1], the first CCD linear sensor shows the region indicated by reference numeral (7) in FIG. 8 [1], and the second CCD linear sensor shows in FIG. 8 [1]. The area indicated by reference numeral (5) is imaged.
[0014]
Next, the CCD solid-state imaging device is sub-scanned at a distance d, and time t ₄ 8 [1], the area indicated by the reference numeral (8) in FIG. 8 [1] by the first CCD linear sensor and the second CCD linear sensor in FIG. The area indicated by reference numeral (6) is imaged.
[0015]
By performing the sub-scanning as described above, the entire imaging area is imaged, but at time t. ₁ ~ T ₂ And time t ₃ ~ T ₄ While the sub-scanning distance at d is d, time t ₂ ~ T ₃ The sub-scanning distance is 3d, and there is a gap of distance due to the presence of the overflow drain between the first CCD linear sensor and the second CCD linear sensor, so that the sub-scanning becomes irregular, There arises a disadvantage that it becomes difficult to control the sub-scanning.
[0016]
In the above description, the case where the gap between the first CCD linear sensor and the second CCD linear sensor is a distance d equal to the width of the first sensor array and the second sensor array is taken as an example. As described above, even when the gap between the first CCD linear sensor and the second CCD linear sensor is larger than the distance d and smaller than the distance d, the same disadvantage as described above occurs.
Further, in the above description, the case where the CCD solid-state imaging device is captured at a predetermined position in the imaging region is described as an example at each time. However, while the CCD solid-state imaging device moves without being stationary, Even in the case of imaging, the inconvenience that it becomes difficult to control the sub-scan of the CCD solid-state imaging device is the same as in the case of imaging at a predetermined position.
[0017]
The present invention has been made in view of the above points, and provides a solid-state imaging device and a driving method thereof in which sub-scanning during imaging is regular and sub-scan control is easy. It is the purpose.
[0018]
[Means for Solving the Problems]
In order to achieve the above object, a solid-state imaging device according to the present invention includes a first sensor array, a first readout gate that reads out signal charges photoelectrically converted by the first sensor array, and the first readout. A first linear sensor having a first charge transfer register for transferring a signal charge read out through a gate; a second sensor array; and a second sensor array for reading out a signal charge photoelectrically converted by the second sensor array. A second linear sensor having a second read gate and a second charge transfer register for transferring a signal charge read through the second read gate; the first linear sensor; and the second linear sensor. In a solid-state imaging device having an overflow drain disposed between sensors, a first on-chip lens that focuses light incident on the overflow drain onto the first sensor array A second on-chip lens that collects light incident on the overflow drain on the second sensor array, the distance between the first on-chip lens being small or zero, and the first on-chip lens. The distance between the optical center of the on-chip lens and the optical center of the second on-chip lens is ½ times the sub-scanning distance in the unit accumulation time of the first sensor array and the second sensor array. .
[0019]
Here, the interval between the light incident on the overflow drain and the first on-chip lens for condensing the light on the first sensor array is small or zero, and the light incident on the overflow drain is condensed on the second sensor array. Incident light is detected by the first linear sensor and the second linear sensor in the same manner as in the case where the first linear sensor and the second linear sensor are disposed adjacent to each other by the second on-chip lens. be able to. The distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens is the unit accumulation time of the first sensor array and the second sensor array, that is, the application of the first read voltage. Since the sub-scanning distance is ½ times the time from the time to the application of the subsequent readout voltage, the imaging region can be imaged without excess or deficiency.
[0020]
Hereinafter, as an example, an imaging region similar to the imaging region described in FIG. 7 is imaged by performing sub-scanning at a distance of 2d during the unit accumulation time of the first sensor row and the second sensor row. The distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens is more than ½ times the sub-scanning distance in the unit accumulation time of the first sensor array and the second sensor array. When the distance is large, the distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens is ½ of the sub-scanning distance in the unit accumulation time of the first sensor array and the second sensor array. If it is smaller than double, it will be explained that the imaging area cannot be imaged without excess or deficiency. In FIG. 8 [2] and FIG. 8 [3], symbol C indicates a first on-chip lens, and symbol D indicates a second on-chip lens. That is, the symbol C indicates an area that can be imaged by the first CCD linear sensor, and the symbol D indicates an area that can be imaged by the second CCD linear sensor.
[0021]
Now, the distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens is 1/2 of the sub-scanning distance 2d in the unit accumulation time of the first sensor array and the second sensor array. If it is greater than twice, for example 1.5d, first the time t ₁ 8 [2], the area indicated by the reference numeral (2) in FIG. 8 [2] indicated by the reference numeral (2-2) in FIG. 8 [2] by the first CCD linear sensor. 8 and the area indicated by reference numeral (3) in FIG. 8 [2], the area indicated by reference numeral (1) in FIG. 8 [2] by the second CCD linear sensor, and the reference numeral (2- When a half area of the area indicated by reference numeral (2) in FIG. 8 [2] shown in FIG. 8 [2] is taken, and then the CCD solid-state imaging device is sub-scanned at a distance 2d, time t ₂ 8 [2], the area indicated by the reference numeral (4) in FIG. 8 [2] indicated by the reference numeral (4-2) in FIG. 8 [2] by the first CCD linear sensor. And a region indicated by reference numeral (5) in FIG. 8 [2], a region indicated by reference numeral (3) in FIG. 8 [2] by the second CCD linear sensor, and a reference numeral (4- An area half of the area indicated by reference numeral (4) in FIG. 8 [2] shown in FIG. 8 [1] is imaged, but the area indicated by reference numeral (3) in FIG. ₁ And time t ₂ In this case, it is not suitable for actual imaging because it causes redundant imaging and generates unnecessary imaging time.
[0022]
Further, the distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens is ½ of the sub-scanning distance 2d in the unit accumulation time of the first sensor array and the second sensor array. If it is smaller than twice, for example 0.5d, first the time t ₁ 8 [3], the area indicated by reference numeral (1) in FIG. 8 [3] indicated by reference numeral 1-2 in FIG. 8 [3] by the first CCD linear sensor. The second CCD linear sensor performs imaging of a half of the area indicated by reference numeral (1-1) in FIG. 8 [3] and the area indicated by reference numeral (1) in FIG. 8 [3]. When the CCD solid-state imaging device performs sub-scanning at a distance 2d, time t ₂ 8 [3], the area indicated by reference numeral (3) in FIG. 8 [3] indicated by reference numeral (3-2) in FIG. 8 [3] by the first CCD linear sensor. The second CCD linear sensor is used to image the half of the area indicated by reference numeral (3-1) in FIG. 8 [3] and half of the area indicated by reference numeral (3) in FIG. 8 [3]. For the region indicated by reference numeral (2) in FIG. 8 [3], the time t ₁ And time t ₂ In either case, no image is taken.
[0023]
That is, the distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens is ½ times the sub-scanning distance 2d in the unit accumulation time of the first sensor array and the second sensor array. And the distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens is 1 of the sub-scanning distance 2d in the unit accumulation time of the first sensor row and the second sensor row. If it is smaller than 2 times, it is not possible to take an image of the imaging area without excess or deficiency. Note that the distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens is 1/2 times the sub-scanning distance 2d in the unit accumulation time of the first sensor array and the second sensor array. A specific driving method of the solid-state imaging device in this case, that is, a case where the imaging region is imaged without excess or deficiency will be described below.
[0024]
In order to achieve the above object, a method for driving a solid-state imaging device according to the present invention includes a first sensor row, a first readout gate that reads out signal charges photoelectrically converted by the first sensor row, and A first linear sensor having a first charge transfer register for transferring a signal charge read through the first read gate, a second sensor array, and a photoelectric conversion by the second sensor array A second linear sensor having a second readout gate for reading out the signal charge and a second charge transfer register for transferring the signal charge read out through the second readout gate;
An overflow drain disposed between the first linear sensor and the second linear sensor; a first on-chip lens that focuses light incident on the overflow drain onto the first sensor array; A solid-state imaging device driving method comprising: a second on-chip lens that has a small or zero interval from the first on-chip lens and condenses light incident on the overflow drain on the second sensor array. The unit accumulation time of the first sensor array and the second sensor array is twice the distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens. Sub-scan the distance.
[0025]
Here, in the unit accumulation time of the first sensor row and the second sensor row, sub-scanning is performed by double the distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens. By doing so, it is possible to pick up an image of the imaging region without excess or deficiency.
[0026]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings to provide an understanding of the present invention.
[0027]
FIG. 1 is a schematic cross-sectional view for explaining an example of a solid-state imaging device to which the present invention is applied. The first CCD linear sensor 2 in the CCD solid-state imaging device 1 shown here is the conventional CCD solid-state device described above. Similar to the first CCD linear sensor in the image pickup apparatus, it has a first sensor row 3 in which a large number of photoelectric conversion units (pixels) made of photodiodes are linearly arranged, and one of the first sensor rows. On the side, a first readout gate 4 that reads out the signal charge photoelectrically converted by each photoelectric conversion unit, and a first charge transfer register 5 that transfers the signal charge read out by the first readout gate to the output unit side. The first overflow control barrier 6 and the overflow drain 7 are disposed on the other side of the first sensor row.
Furthermore, a first on-chip lens 8 that collects light incident on the first overflow control barrier and the overflow drain on the first sensor array is disposed above the first sensor array.
[0028]
Here, the width of the first on-chip lens indicated by symbol a in FIG. 1 is formed to be the same as the width of the first sensor array, and the first on-chip lens indicated by symbol b in FIG. The regions other than the region where the light condensed by the light is incident are shielded by the aluminum film 9.
That is, the width of the first on-chip lens is the same as the width of the first sensor array, and the area other than the area where the light condensed by the first on-chip lens is incident in the first sensor array. Is configured so as to be shielded from light, the same output as when the first sensor array senses incident light at the position where the first on-chip lens is provided is obtained from the first CCD linear sensor. be able to.
[0029]
In addition, the second CCD linear sensor 10 in an example of the CCD solid-state imaging device to which the present invention is applied has a large number of linear photoelectric conversion units (pixels) made of photodiodes, like the first CCD linear sensor described above. The second sensor array 11 is arranged, and on one side of the second sensor array, a second readout gate 12 that reads out the signal charge photoelectrically converted by each photoelectric conversion unit and the second readout A second charge transfer register 13 for transferring the signal charge read by the gate to the output unit side is provided, and the second overflow control barrier 14 and the overflow drain described above are provided on the other side of the second sensor array. Is arranged. That is, the first CCD linear sensor and the second CCD linear sensor are configured to be symmetrical with respect to the overflow drain.
Further, a second on-chip lens 15 for condensing light incident on the second overflow control barrier and the overflow drain onto the second sensor array is above the second sensor array, and the first on-chip described above. The lens is arranged so that the distance from the lens is small or zero.
[0030]
Here, similarly to the first on-chip lens described above, the width of the second on-chip lens indicated by reference character c in FIG. 1 is formed to be the same as the width of the second sensor array. The region other than the region where the light condensed by the second on-chip lens indicated by the symbol d in 1 is incident is shielded by an aluminum film.
That is, the width of the second on-chip lens is the same as the width of the second sensor array, and the area other than the area where the light condensed by the second on-chip lens is incident in the second sensor array Since the second sensor array senses the incident light at the position where the second on-chip lens is provided, the second CCD linear sensor obtains the same output as that of the second CCD linear sensor. be able to.
In the example of the CCD solid-state imaging device to which the present invention is applied, the width of the first sensor row and the width of the second sensor row are formed to be the same. And the width of the second on-chip lens are the same.
[0031]
The first on-chip lens only needs to be able to focus the light incident on the first overflow control barrier and the overflow drain on the first sensor array, and the first on-chip lens is not connected to the first overflow control barrier and the overflow drain. As long as the incident light can be condensed on the first sensor array, the first on-chip lens may have any shape, and as shown in FIG. 2 may be formed, or as shown in FIG. 2B, the first sensor array may have a shape in which convex portions are formed.
Similarly, it is sufficient that the second on-chip lens can collect the light incident on the second overflow control barrier and the overflow drain on the second sensor array, and the second overflow control barrier and the overflow drain are sufficient. The second on-chip lens may have any shape as long as the light incident on the second sensor array can be collected on the second sensor array, and even if the convex portion is formed for each pixel. Alternatively, the second sensor array may have a shape in which convex portions are formed as a whole.
[0032]
Further, as described above, it is sufficient that the first on-chip lens can focus the light incident on the first overflow control barrier and the overflow drain on the first sensor array, and the first on-chip lens is not necessarily required. It is not necessary to form the chip lens so that the width of the chip lens is the same as the width of the first sensor array. From the viewpoint of reducing the size of the CCD solid-state imaging device, as shown in FIG. 3, the width of the first sensor array is the same as the width of the region on which the light condensed by the first on-chip lens is incident. It is preferable to adopt such a configuration.
Similarly, it is sufficient for the second on-chip lens to be able to collect light incident on the second overflow control barrier and the overflow drain on the second sensor array, and the width of the second on-chip lens is not necessarily required. Need not be formed to be the same as the width of the second sensor array. From the viewpoint of reducing the size of the CCD solid-state imaging device, as in the case of the first sensor array, the width of the second sensor array is an area where light condensed by the second on-chip lens is incident. It is preferable to have a configuration that is the same as the width.
[0033]
In the first CCD linear sensor configured as described above, the light is condensed by the first on-chip lens, and is input to each photoelectric conversion unit of the first sensor array in accordance with the input light incident on the first sensor array. The accumulated signal charge is sequentially transferred by the first charge transfer register through the first read gate. The signal charge overflowing the first overflow control barrier is discarded to the overflow drain as in the CCD linear sensor in the conventional CCD solid-state imaging device described above.
[0034]
Further, in the second CCD linear sensor configured as described above, similarly to the first CCD linear sensor described above, the input light collected by the second on-chip lens and incident on the second sensor array. Accordingly, the signal charges accumulated in the respective photoelectric conversion units of the second sensor array are sequentially transferred by the second charge transfer register through the second readout gate. Note that the signal charge overflowing the second overflow control barrier is discarded to the overflow drain shared with the first CCD linear sensor.
[0035]
Hereinafter, a driving method of a CCD solid-state imaging device including the first CCD linear sensor and the second CCD linear sensor configured as described above will be described. That is, in the example of the driving method of the solid-state imaging device to which the present invention is applied, the width of the first on-chip lens and the width of the second on-chip lens is d, and the first sensor row and the second sensor row 4d, 2d sub-scan, which is twice the distance d between the optical center of the first on-chip lens and the optical center of the second on-chip lens, is indicated by symbol e in FIG. A driving method of the CCD solid-state imaging device that images the imaging region will be described as an example. Note that reference numerals (1) to (8) in FIG. 4 represent areas obtained by dividing the imaging area for each distance d. Further, in FIG. 4, the symbol f indicates a first on-chip lens, and the symbol g indicates a second on-chip lens. That is, the symbol f indicates an area that can be imaged by the first CCD linear sensor, and the symbol g indicates an area that can be imaged by the second CCD linear sensor.
[0036]
In an example of the driving method of the solid-state imaging device to which the present invention is applied, first, the time t ₁ As shown in FIG. 4A, the first CCD linear sensor images the region indicated by reference numeral (2) in FIG. 4, and the second CCD linear sensor images the region indicated by reference numeral (1) in FIG. Do.
[0037]
Next, the CCD solid-state imaging device is sub-scanned at a distance 2d, and the time t ₂ As shown in FIG. 4B, the first CCD linear sensor images the area indicated by reference numeral (4) in FIG. 4, and the second CCD linear sensor images the area indicated by reference numeral (3) in FIG. Do.
[0038]
Subsequently, the CCD solid-state imaging device is sub-scanned at a distance of 2d, and time t ₃ As shown in FIG. 4C, the first CCD linear sensor images the area indicated by reference numeral (6) in FIG. 4, and the second CCD linear sensor images the area indicated by reference numeral (5) in FIG. Do.
[0039]
Next, the CCD solid-state imaging device is sub-scanned at a distance 2d, and the time t ₄ As shown in FIG. 4D, the first CCD linear sensor images the area indicated by reference numeral (8) in FIG. 4, and the second CCD linear sensor images the area indicated by reference numeral (7) in FIG. Do.
[0040]
As described above, in an example of the solid-state imaging device to which the present invention is applied, the overflow drain is disposed between the first sensor row and the second sensor row, so that the signal overflowing the overflow control barrier The electric charge can be discarded to the overflow drain, the overflow margin of the sensor array can be secured, and the time t ₁ ~ T ₂ , Time t ₂ ~ T ₃ And time t ₃ ~ T ₄ In either case, by regularly performing the sub-scanning at the distance 2d, all the imaging regions can be imaged without excess and deficiency, and the sub-scanning control is easy.
[0041]
In the above description, the case where the CCD solid-state imaging device is captured at a predetermined position in the imaging region is described as an example at each time. However, the CCD solid-state imaging device is moving without stationary. Even in the case of imaging, all the imaging regions can be imaged without excess or deficiency by regularly performing sub-scanning of the CCD solid-state imaging device in the same manner as when imaging at a predetermined position.
[0042]
【The invention's effect】
As described above, according to the solid-state imaging device and the driving method of the solid-state imaging device of the present invention, sub-scanning during imaging is regular, and sub-scan control is easy.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view for explaining an example of a CCD solid-state imaging device to which the present invention is applied.
FIG. 2 is a perspective view for explaining the shape of an on-chip lens.
FIG. 3 is a schematic cross-sectional view for explaining another example of a CCD solid-state imaging device to which the present invention is applied.
FIG. 4 is a schematic diagram for explaining an example of a driving method of a solid-state imaging device to which the present invention is applied.
FIG. 5 is a schematic configuration diagram for explaining a conventional CCD solid-state imaging device;
FIG. 6 is a schematic cross-sectional view for explaining a conventional CCD solid-state imaging device.
FIG. 7 is a perspective view for explaining an imaging process.
FIG. 8 is a schematic diagram for explaining an imaging process.
[Explanation of symbols]
1 CCD solid-state imaging device
2 CCD linear sensor
3 First sensor row
4 First read gate
5 First charge transfer register
6 First overflow control barrier
7 Overflow drain
8 First on-chip lens
9 Aluminum film
10 Second CCD linear sensor
11 Second sensor array
12 Second read gate
13 Second charge transfer register
14 Second overflow control barrier
15 Second on-chip lens

Claims (2)

A first sensor array; a first readout gate for reading out signal charges photoelectrically converted by the first sensor array; and a first charge transfer for transferring signal charges read out through the first readout gate. A first linear sensor having a register;
A second sensor array, a second readout gate for reading out the signal charges photoelectrically converted by the second sensor array, and a second charge transfer for transferring the signal charges read out through the second readout gate. A second linear sensor having a register;
In a solid-state imaging device having an overflow drain disposed between the first linear sensor and the second linear sensor,
A first on-chip lens that focuses light incident on the overflow drain onto the first sensor array;
A distance between the first on-chip lens is small or zero and a second on-chip lens that focuses the light incident on the overflow drain on the second sensor array;
The distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens is 1 / the sub-scanning distance in the unit accumulation time of the first sensor array and the second sensor array. 2. A solid-state imaging device characterized by being doubled. A first sensor array; a first readout gate for reading out signal charges photoelectrically converted by the first sensor array; and a first charge transfer for transferring signal charges read out through the first readout gate. A first linear sensor having a register;
A second sensor array, a second readout gate for reading out the signal charges photoelectrically converted by the second sensor array, and a second charge transfer for transferring the signal charges read out through the second readout gate. A second linear sensor having a register;
An overflow drain disposed between the first linear sensor and the second linear sensor;
A first on-chip lens that focuses light incident on the overflow drain onto the first sensor array;
A solid-state imaging device driving method comprising: a second on-chip lens that has a small or zero interval from the first on-chip lens and condenses light incident on the overflow drain on the second sensor array. Because
The unit accumulation time of the first sensor array and the second sensor array is set to a distance that is twice the distance between the optical center of the first on-chip lens and the optical center of the second on-chip lens. A driving method of a solid-state imaging device for scanning.

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