JP4006204B2 - Conductive film and image forming apparatus manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a conductive film using a photosensitive paste or the like and a method for manufacturing an image forming apparatus.
[0002]
[Prior art]
A conventional surface conduction electron-emitting device is shown in FIG. FIG. 11A is a schematic plan view of a conventional electron-emitting device, and FIG. 11B is a schematic cross-sectional view taken along line BB ′ in FIG.
[0003]
In FIG. 11, 11 is an insulating substrate, 7 is an electron emission conductive film, 2 and 3 are electrodes, and 8 is an electron emission portion.
[0004]
FIG. 12 is a schematic configuration diagram showing an example of an image display device as an image forming apparatus using the electron-emitting device such as the surface conduction electron-emitting device shown in FIG.
[0005]
In FIG. 12, 81 is a substrate, 82 is an outer frame, and 86 is a face plate on which an image forming member 84 is arranged. Each connection part of the outer frame 82, the substrate 81, and the face plate 86 is sealed with an adhesive such as a low-melting glass frit (not shown), and an envelope (airtight container) 88 for maintaining the inside of the image display device in a vacuum. Is configured.
[0006]
The substrate 11 is fixed to the substrate 81. An n × m number of electron-emitting devices 74 are formed on the substrate 11 (n and m are positive integers of 2 or more, and are appropriately set according to the target number of display pixels).
[0007]
Each electron-emitting device 74 is connected to wirings 4 and 6 made of a conductive film. 12 includes m column direction wirings 4 and n row direction wirings 6 (also referred to as “matrix wirings”). Note that an insulating layer (not shown) is disposed at the intersection of the row direction wiring 6 and the column direction wiring 4 so that the row direction wiring 6 and the column direction wiring 4 are insulated.
[0008]
In order to form the image display device, it is necessary to form a large number of row direction wirings 6 and column direction wirings 4 in an array.
[0009]
As a method for forming a large number of row-direction wirings 6 and column-direction wirings 4, it is possible to form a wiring made of a conductive film by using a printing technique that is relatively inexpensive, does not require a vacuum device, and can cope with a large area. It is disclosed in Japanese Patent Laid-Open No. 8-34110.
[0010]
[Problems to be solved by the invention]
In order to make an image forming apparatus such as an image display apparatus as described above with higher definition, a wiring made of a conductive film that feeds power to each electron-emitting device in order to drive each electron-emitting device has higher accuracy. Need to be formed.
[0011]
Therefore, a method using a photosensitive paste can be considered in forming the wiring.
[0012]
Further, when an image forming apparatus having a large area with a diagonal of several tens of centimeters is created, it is necessary to make wiring used in the image forming apparatus have a lower resistance. For this purpose, it is important to form a thick wiring.
[0013]
However, when a photosensitive paste is used simply for the purpose of forming a thick wiring with high accuracy, there are the following problems.
[0014]
In general, the process of creating a wiring when using a photosensitive paste is performed in the order of photosensitive paste film formation → (drying) → exposure → development → firing.
[0015]
However, in order to form a thick film, a thick photosensitive paste is formed at a time and (drying), exposure, development, and baking steps are sequentially performed to produce the following. .
[0016]
13, 11 is a substrate, 12 is a photosensitive paste, 13 is a mask, 14 is exposure light, 15 is a latent image, 19 is a developed pattern as a developed image, and 21 is a completed wiring pattern. ) Is a film forming step, (b) is an exposure step, (c) is a developing step, and (d) is a baking step. When the layers are produced in this order, warping of the edge portion of the wiring pattern 21 after baking, etc. When the curl (hereinafter referred to as edge curl) increases and the insulating layer is further laminated and formed in the next process, the space on both sides of the wiring pattern 21 on the lower side of the edge curl portion is not sufficiently filled with the insulating material. It will be left.
[0017]
This is considered to be due to volume shrinkage caused by evaporation of the solvent or the like in the baking step (d), insufficient exposure amount at the time of exposure due to the thick thickness of the photosensitive paste, and the like.
[0018]
On the other hand, if the exposure amount is increased because the exposure amount is insufficient, the edge of the wiring pattern 21 is lost or the pattern is wider than the desired width. There was a case where it was trapped.
[0019]
Further, among the wirings made of the conductive film, when forming the matrix wiring (row direction wiring and column direction wiring) as used in the image display device of FIG. 12, the row direction wiring and the column direction wiring are insulated. In order to do this, it is necessary to form an insulating layer after forming the lower layer wiring located on the lower side, and then laminate the upper layer wiring.
[0020]
Therefore, when the wiring having the edge curl portion is used as the lower lower layer wiring, an insulating layer is formed on the lower layer wiring having the edge curl.
[0021]
At this time, when the insulating layer is formed by the printing method, the space on both sides of the lower layer wiring below the edge curl portion causes bubbles to be included in the insulating layer due to the firing step essential for the printing method.
[0022]
As a result, the insulation between the row-direction wiring and the column-direction wiring deteriorates due to bubbles in the insulating layer. In the worst case, there is a problem that the row-direction wiring and the column-direction wiring are short-circuited.
[0023]
In the image forming apparatus as described above, a high voltage of several kV to several tens of kV is applied to a metal back or the like disposed on the face plate. Therefore, if a wiring (conductive film) having the edge curl as described above exists on the opposing rear plate, the possibility of a discharge phenomenon starting from the edge curl portion increases.
[0024]
The problematic edge curl was noticeably observed when the film thickness of the photosensitive paste after baking exceeded 5 μm, and the amount of edge curl increased as the film thickness increased.
[0025]
For example, when the film thickness of part A in FIG. 13D after firing is 10 μm, the edge curl corresponding to the film thickness of part B in FIG. 13D occurs from 18 to 21 μm.
[0026]
In addition, the film thickness of A part shows the height from the board | substrate surface of the part except the edge curl part of the wiring pattern 21 edge part after baking. The film thickness of the B portion indicates the height of the edge curl portion at the end of the wiring pattern 21.
[0027]
For this reason, the edge curl amount (B / A) is about twice as much. Here, the edge curl amount is a ratio of A and B in FIG. 13. In this case, the edge curl amount is about twice that B / A = (18/10) to (21/10) ≈2. That is.
[0028]
As described above, when the edge curl amount is about twice, when forming the matrix wiring described above, only the height of the edge curl portion affects the film formation of the insulating layer to be laminated in the subsequent process.
[0029]
Depending on the thickness of the insulating layer, the edge curl amount may be comparable to the thickness of the insulating layer. In such a case, the thickness of the insulating layer is substantially equal to the edge. Canceled in curl minutes.
[0030]
Therefore, in order to obtain a desired insulating performance, it becomes necessary to form an extra insulating layer in consideration of edge curl. Furthermore, when the upper upper layer wiring is formed after the insulating layer is formed, as a result of forming the insulating layer thick, an extra step is generated, and the upper upper layer wiring may be disconnected.
[0031]
Further, in the terminal (extraction) portion of the wiring in the image forming apparatus, when there is an edge curl portion, there is a case where the edge curl portion is broken or a contact failure occurs when performing flexible mounting.
[0032]
SUMMARY An advantage of some aspects of the invention is that it provides a conductive film and an image forming apparatus manufacturing method that reduce edge curl.
[0033]
[Means for Solving the Problems]
In order to achieve the above object, the conductive film manufacturing method of the present invention includes forming a film containing a photosensitive material and a conductive material on a substrate, and forming the film by the film forming step. In the desired area of the membrane, its central part than Exposure amount in the peripheral part Be reduced And an exposure process for forming a latent image on the film, a development process for removing a non-latent image area of the film and forming a developed image after the exposure process, and a development process. And a baking step for baking the developed image.
[0034]
In the method for producing a conductive film of the present invention, a film forming process for forming a film containing a photosensitive material and a conductive material, and light is applied to a desired region of the film formed by the film forming process. Irradiating and forming a latent image on the film, and sequentially repeating a plurality of times to laminate the film, and integrating the latent image of each layer to form a laminated film in which a laminated latent image is formed And after forming the laminated film, the non-latent image area of the laminated film Excluding And a developing step for forming a developed image, and a baking step for baking the developed image formed by the developing step.
[0035]
Furthermore, in the method for producing a conductive film of the present invention,
(A) a film forming step of forming a film containing a photosensitive material and a conductive material on a substrate;
(B) an exposure step of irradiating light to a desired region of the film including the photosensitive material and the conductive material formed by the film formation step a plurality of times;
(C) In the film having the region exposed by the exposure step and the unexposed region, a developing step of removing the unexposed region when the photosensitive material is negative, and removing the exposed region when positive. ,
(D) firing the film that has undergone the development step;
It is characterized by having.
[0036]
In the method for producing a conductive film of the present invention, (A) a film containing a photosensitive material and a conductive material is used. Formation And (B) repeating an exposure process of irradiating light to a desired region of the film including the photosensitive material and the conductive material formed by the film forming process, respectively, Forming a laminated film in which a plurality of films each having an exposed area and an unexposed area are laminated, and (C) in the laminated film, when the photosensitive material is a negative type, the unexposed area is defined as a positive type. In some cases, the method includes a developing step of removing the exposed region, and (D) a step of baking the laminated film that has undergone the developing step.
[0037]
DETAILED DESCRIPTION OF THE INVENTION
Exemplary embodiments of the present invention will be described in detail below with reference to the drawings. However, the dimensions, materials, shapes, relative arrangements, and the like of the components described in this embodiment are not intended to limit the scope of the present invention only to those unless otherwise specified. Absent.
[0038]
Of the terms used below, those explained in the prior art are used as they are. Further, the “photosensitive paste” in the present invention means at least a conductive material composed of a simple substance or a composite of a metal such as silver or copper that functions as a wiring (conductive film) material, and a photosensitive material having photosensitive characteristics. Refers to a paste-like material containing a functional material and a solvent. In addition to the above materials, glass particles, a sensitizer, and the like are appropriately added to the “photosensitive paste”.
[0039]
Furthermore, in the following, an example is shown in which a photosensitive paste having a negative photosensitive characteristic (the light irradiation part is insolubilized) is used, but in the present invention, the photosensitive characteristic is positive (the light irradiation part is solubilized). ) Photosensitive paste may be used.
[0040]
(First embodiment)
FIG. 1 is a schematic view showing a manufacturing process of a wiring (conductive film) according to the present embodiment. FIG. 1A is a state diagram after film formation of a photosensitive paste, FIG. 1B is a state diagram at the time of exposure, FIG. 1C is a state diagram at the time of the second exposure, and FIG. FIG. 1E is a state diagram after development, and FIG. 1E is a state diagram after baking.
[0041]
In FIG. 1, 11 is a substrate, 12 is a layer formed by applying a photosensitive paste, 13 (13 ′) is a mask for irradiating only a desired region of the layer 12, 14 and 17 is exposure light, 15 and 18 are latent images formed by exposure, 19 is a development pattern as a developed image, and 20 is a completed wiring pattern (conductive film).
[0042]
A method for forming a wiring (conductive film) on the substrate 11 will be described below.
[0043]
FIGS. 1A to 1E show a film forming process, an exposure process, a developing process, and a baking process in this order. In FIG. 1A, the substrate 11 uses soda-lime glass. A layer 12 was formed on the substrate 11 using a photosensitive paste. That is, a layer 12 as a film containing a photosensitive material and a conductive material was formed on the substrate 11.
[0044]
The photosensitive paste is mainly composed of silver as a conductive material, and contains about 60 to 80% of silver particles, and 2 to 4 organic components, glass frit and solvent components having photosensitivity as the photosensitive material. The one containing about 30% was used. A photosensitive paste having this conductive material was formed on the substrate 11 by screen printing.
[0045]
A plate having a roughness of # 150 to 400 is used depending on the desired final film thickness. In this case, in order to make the film thickness after drying of the layer 12 slightly over 12 μm, a plate having a roughness of # 200 is used. Filmed.
[0046]
Then, about 80-150 degreeC drying was implemented in order to dry the photosensitive paste. The thickness of the layer 12 after drying was about 13 μm.
[0047]
Next, in FIG.1 (b), the mask 13 which has the opening part of a desired wiring pattern was arrange | positioned, and the layer 12 which the photosensitive paste dried was exposed.
[0048]
At this time, the exposure light 14 passes through the opening of the mask 13 to expose the photosensitive paste layer 12 as shown in FIG. Reference numeral 15 denotes a latent image which is an exposed portion of the photosensitive paste.
[0049]
Next, in FIG. 1C, although the method is the same as the first exposure, a first pattern (using a mask 13 'having a smaller opening than the mask 13 used in the first exposure) is used. Alignment was performed so that the center of the exposure area) and the second pattern (exposure area) overlapped, and the second exposure was performed. Reference numeral 18 denotes a latent image which is a second exposed portion of the photosensitive paste.
[0050]
As a result, as a result, the exposure amount is large in the second exposed portion, which is the central portion of the desired wiring pattern, and the exposure amount is decreased in the peripheral portion exposed only in the first time. Latent images having different exposure amounts are formed.
[0051]
Thus, in the state where exposure was repeated twice, the developing process was performed on the layer 12 of the photosensitive paste having a height of about 13 μm in FIG.
[0052]
Development differs depending on the photosensitive paste used, but after development with a weak alkaline solution, development is stopped by rinsing with pure water, and drying is performed by blowing to form a development pattern 19 as shown in FIG. did.
[0053]
Further, as shown in FIG. 1E, the desired wiring pattern 20 was formed by firing. The firing at this time was performed at around 500 ° C. The thickness of the wiring pattern 20 after firing was about 7 μm.
[0054]
In this case, the lowest part of the film thickness in the cross section of the wiring pattern 20 is about 7 μm at the central part, and the highest part is about 8 to 10 μm at the end part, and the edge curl amount is about 1.1 to 1.4 times. Thus, the wiring pattern 20 was formed.
[0055]
As described above, in the exposure process, the edge curl formed in the wiring pattern 20 can be significantly reduced by forming latent images composed of portions having different exposure amounts and proceeding from the development process.
[0056]
Since the edge curl is reduced in this way, when the manufacturing method of the present embodiment is applied to the matrix wiring, even if the insulating layer is formed on the lower layer wiring, the edge curl is small, and bubbles are generated in the insulating layer. The number of holes or the growth of bubbles was small even with lamination.
[0057]
Further, even if an upper layer wiring was further formed thereon, the insulation of the insulating layer was good and the number of defects causing a short circuit was very small.
[0058]
In addition, since the edge curl is small, an insulating layer having sufficient insulating properties can be formed without increasing the number of insulating layers to be laminated in a subsequent process.
[0059]
Further, when the upper layer wiring is formed on the insulating layer, the upper layer wiring is not disconnected due to the edge curl.
[0060]
Further, since the edge curl portion is less prominent at the end portion (terminal portion) of the wiring, damage such as chipping of the wiring does not occur even when flexible mounting is performed, and contact failure does not occur.
[0061]
Moreover, there was no problem of missing wiring lines even if the flex was replaced.
[0062]
(Second Embodiment)
FIG. 2 is a diagram showing a manufacturing process of the wiring according to the present embodiment. 2A is a state diagram after film formation of the photosensitive paste, FIG. 2B is a state diagram after exposure, FIG. 2C is a state diagram after film formation of the second layer, and FIG. ) Is a state diagram after exposure of the second layer, FIG. 2E is a state diagram after development, and FIG. 2F is a state diagram after baking.
[0063]
In FIG. 2, 11 is a substrate, 12 and 16 are first and second layers formed by applying a photosensitive paste, 13 is a mask, 14 and 17 are exposure light, 15 and 18 are latent images, and 19 is a latent image. A development pattern 20 is a wiring pattern.
[0064]
A method for forming wiring on the substrate of this embodiment will be described below.
[0065]
2A to 2F show a film forming process, an exposure process, a film forming process, an exposure process, a development process, and a baking process in order.
[0066]
In FIG. 2A, soda lime glass was used as the substrate 11, and a photosensitive paste layer (hereinafter referred to as a first layer) 12 was formed on the substrate 11.
[0067]
The photosensitive paste contains silver as a main component and contains about 60 to 80% of silver particles, and contains about 20 to 40% of glass components, photosensitive organic components, glass frit and solvent components. It was used. This conductive paste having conductivity was formed on the substrate 11 by screen printing.
[0068]
A plate with a roughness of # 150 to 400 is properly used from the desired final film thickness. In this case, in order to make the film thickness after drying of the first layer 12 slightly over 10 μm, a plate with a roughness of # 325 is used. Used to form a film.
[0069]
Then, about 80-150 degreeC drying was implemented in order to dry the photosensitive paste. The thickness of the first layer 12 after drying was about 11 μm.
[0070]
Next, in FIG. 2B, a mask 13 having an opening having a desired wiring pattern shape is arranged and exposed so that a desired region of the dried first layer 12 of the photosensitive paste is exposed. .
[0071]
At this time, as shown in the figure, the exposure light 14 passes through the opening of the mask 13 to expose the first layer 12 of the photosensitive paste. Reference numeral 15 denotes a latent image which is a portion of the exposed photosensitive paste of the first layer 12.
[0072]
Next, in FIG. 2C, a second photosensitive paste layer (hereinafter referred to as a second layer) 16 is formed by the same method as that for the first layer 12, and then the first layer 12 and Drying was performed in the same manner. The total thickness of the photosensitive paste after drying (first layer 12 + second layer 16) was about 22 μm in total.
[0073]
Next, in FIG. 2D, the pattern (exposure area) 15 of the first layer 12 and the second exposure area overlap using the same mask 13 used in the exposure process of the first layer 12. Were aligned and exposed.
[0074]
At this time, as shown in the figure, the exposure light 17 passes through the opening of the mask 13 to expose the second layer 16 of the photosensitive paste. Reference numeral 18 denotes a latent image which is a portion of the exposed photosensitive paste of the second layer 16.
[0075]
In this way, film formation to exposure was repeated twice. The above process is a laminated film forming process, and the latent images 15 and 18 are also stacked.
[0076]
After the formation of the laminated film having the two-layer structure, development was collectively performed on the total layer (first layer 12 + second layer 16) of the photosensitive paste having a height of about 22 μm in FIG.
[0077]
Development differs depending on the photosensitive paste used, but after development with a weak alkaline solution, development is stopped by rinsing with pure water, and drying is performed by blowing to form a development pattern 19 as shown in FIG. did.
[0078]
Further, as shown in FIG. 2F, the desired wiring pattern 20 was formed by firing. The firing at this time was performed at around 500 ° C. The thickness of the wiring pattern 20 after firing was about 14 μm.
[0079]
In this case, the lowest part of the film thickness in the cross section of the wiring pattern 20 is about 14 μm at the center, and the highest part is about 17 to 18 μm at the end, and the edge curl amount is about 1.2 to 1.3 times. Thus, the wiring pattern 20 was formed.
[0080]
In this manner, the edge curl could be greatly reduced by repeating the film formation and exposure twice and proceeding from the development step onward in a two-layer configuration.
[0081]
As described above, the wiring of the present embodiment in which the edge curl is reduced does not cause a short-circuit defect between the lower layer wiring and the upper layer wiring even when applied to the matrix wiring.
[0082]
In addition, an insulating layer having sufficient insulating properties could be formed without particularly increasing the number of insulating layers to be laminated in the subsequent process. As a result, even when the upper layer wiring is formed on the insulating layer, the upper layer wiring is not disconnected due to the edge curl.
[0083]
(Third embodiment)
FIG. 3 is a schematic diagram showing a manufacturing process of the wiring according to the present embodiment. 3A is a state diagram after film formation of the photosensitive paste, FIG. 3B is a state diagram after exposure, FIG. 3C is a state diagram after film formation of the second layer, and FIG. ) Is a state diagram after exposure of the second layer, FIG. 3 (e) is a state diagram after film formation of the third layer, FIG. 3 (f) is a state diagram after exposure of the third layer, and FIG. 3 (g). Is a state diagram after development, and FIG. 3 (h) is a state diagram after baking.
[0084]
In FIG. 3, 11 is a substrate, 12, 16 and 21 are first, second and third layers formed by applying a photosensitive paste, 13 is a mask, 14, 17 and 22 are exposure light, Reference numerals 15, 18, and 23 denote latent images, 24 denotes a development pattern, and 25 denotes a wiring pattern.
[0085]
The steps from FIGS. 3A to 3D were performed in the same manner as FIGS. 2A to 2D in the steps of the second embodiment.
[0086]
In FIG. 3A, soda lime glass is used for the substrate 11, and the first layer 12 made of a photosensitive paste is formed on the substrate 11.
[0087]
The photosensitive paste is mainly composed of silver, and contains about 60 to 80% of silver particles, and contains about 20 to 40% of glass component, photosensitive organic component, and solvent component. did. This photosensitive paste was formed into a film by screen printing. In order to make the film thickness after drying a little over 7 μm, a plate having a roughness of # 400 was used.
[0088]
Then, about 80-150 degreeC drying was implemented in order to dry the photosensitive paste. The thickness of the first layer 12 after drying was about 8 μm.
[0089]
Next, in FIG. 3B, a desired region of the first layer 12 was exposed using a mask 13 having a desired pattern (opening).
[0090]
At this time, as shown in the figure, the exposure light 14 passes through the opening of the mask 13 to expose the first layer 12 of the photosensitive paste. Reference numeral 15 denotes a latent image which is a portion of the exposed photosensitive paste of the first layer 12.
[0091]
Next, in FIG. 3C, the second layer 16 was formed by the same method as the first layer 12. Thereafter, drying was performed in the same manner as the first layer 12. The film thickness after drying of the first layer 12 + the second layer 16 was further increased by about 7 μm to a total of about 15 μm.
[0092]
Next, in FIG. 3D, the second layer 16 was exposed using the same mask 13 as in the exposure process for the first layer 12.
[0093]
At this time, the region exposed to the first layer 12 and the region exposed to the second layer 16 were substantially overlapped.
[0094]
As shown in the figure, the exposure light 17 passes through the opening of the mask 13 to expose the second layer 16 of the photosensitive paste. Reference numeral 18 denotes a latent image which is a portion of the exposed photosensitive paste of the second layer.
[0095]
Further, in FIG. 3E, a third photosensitive paste layer (hereinafter referred to as a third layer) 21 was formed in the same manner as the second layer 16. Thereafter, drying was performed in the same manner as the second layer 16. The film thickness after drying of the first layer 12 + the second layer 16 + the third layer 21 was further increased by about 7 μm to a total of about 22 μm.
[0096]
Further, in FIG. 3F, the third layer 21 was exposed using the same mask 13 by the same method as the second layer 16.
[0097]
At this time, the region exposed to the second layer 16 and the region exposed to the third layer 21 were substantially overlapped.
[0098]
As shown in the figure, the exposure light 22 passes through the opening of the mask 13 to expose the third layer 21 of the photosensitive paste. Reference numeral 23 denotes a latent image which is a portion of the exposed photosensitive paste of the third layer 21.
[0099]
In this way, film formation and exposure were repeated three times, and development was performed collectively for the photosensitive paste having a height of about 22 μm in FIG.
[0100]
Development was performed in the same manner as in the second embodiment, and a development pattern 24 as shown in FIG.
[0101]
Further, as shown in FIG. 3H, a desired wiring pattern (conductive film) 25 was formed by firing. The firing at this time was performed at around 500 ° C. The thickness of the wiring pattern 25 after firing was about 14 μm, and the line width was about 75 μm.
[0102]
In this case, the lowest part of the film thickness in the cross section of the wiring pattern 25 is about 14 μm at the center, the highest part is about 15 to 17 μm at the end, and the edge curl amount is about 1.1 to 1.2 times. Thus, the wiring pattern 25 could be formed with almost no edge curl.
[0103]
In this manner, the film formation and exposure are repeated three times, and the edge curl can be greatly reduced as compared with the second embodiment by proceeding with the development process and thereafter in a three-layer configuration in a lump. did it.
[0104]
Since the edge curl is reduced in this way, even when the insulating layer is formed on the wiring pattern 25, the generation of bubbles is reduced, and the generation of holes or the growth of bubbles is also reduced by the lamination, and an electrode is formed thereon. The number of short-circuit defects is very small.
[0105]
In addition, since there are few edge curls, the number of steps does not increase without increasing the number of insulating layers to be stacked in a later step, and there is an extra step when forming the upper layer wiring. There was not.
[0106]
In addition, since the edge curl portion is less prominent in the terminal portion, the edge curl portion is not broken even when flexible mounting is performed, and contact failure does not occur.
[0107]
Further, even if the flex was replaced, there was no problem that the line of the wiring pattern 25 was missing.
[0108]
(Fourth embodiment)
FIG. 4 is a schematic diagram showing a manufacturing process of the wiring according to the present embodiment. 4A is a state diagram after film formation of the photosensitive paste, FIG. 4B is a state diagram after exposure, FIG. 4C is a state diagram after film formation of the second layer, and FIG. ) Is a state diagram after exposure of the second layer, FIG. 4E is a state diagram after development, and FIG. 4F is a state diagram after baking.
[0109]
In FIG. 4, 11 is a substrate, 12 and 16 are first and second layers formed by applying a photosensitive paste, 13 and 31 are masks, 14 and 17 are exposure light, 15 and 18 are latent images, Reference numeral 19 denotes a development pattern, and reference numeral 20 denotes a wiring pattern (conductive film).
[0110]
In the present embodiment, the masks 13 and 31 used in FIG. 4B and FIG. 4D are different, specifically, the opening width is different between the masks 13 and 31, and the mask 31 is narrower. Except for the use, it was produced in the same manner as in the method of the second embodiment, and finally, a development pattern 19 having different line widths up and down as shown in FIG.
[0111]
Furthermore, as shown in FIG. 4F, a desired wiring pattern (conductive film) 20 was formed by firing. The firing at this time was performed at around 500 ° C. The thickness of the wiring pattern 20 after firing was about 14 μm, and the lower line width was about 75 μm.
[0112]
In this case, the lowest part of the film thickness in the cross section of the wiring pattern 20 is about 14 μm at the center of the second layer 16, while the highest part is about 17 μm at the end of the second layer 16, and the edge curl amount is 1 The wiring pattern 20 can be formed by about twice.
[0113]
In this manner, the edge curl could be greatly reduced by repeating the film formation and exposure twice and proceeding from the development step onward in a two-layer configuration.
[0114]
Since the edge curl is reduced in this way, even when the insulating layer is formed on the wiring pattern 20, the generation of bubbles is reduced, and the generation of holes or the growth of bubbles is also reduced by the lamination, and an electrode is formed thereon. There are very few defects that cause short circuit.
[0115]
In addition, since there are few edge curls, the number of steps does not increase without increasing the number of insulating layers to be stacked in a later step, and there is an extra step when forming the upper layer wiring. There was not.
[0116]
In addition, since the edge curl portion is less prominent in the terminal portion, the edge curl portion is not broken even when flexible mounting is performed, and contact failure does not occur.
[0117]
Further, even if the flex was replaced, there was no problem that the line of the wiring pattern 20 was missing.
[0118]
(Fifth embodiment)
FIG. 5 is a schematic diagram showing a manufacturing process of the wiring according to the present embodiment. 5A is a state diagram after film formation of the photosensitive paste, FIG. 5B is a state diagram after exposure, FIG. 5C is a state diagram after film formation of the second layer, and FIG. ) Is a state diagram after exposure of the second layer, FIG. 5 (e) is a state diagram after film formation of the third layer, FIG. 5 (f) is a state diagram after exposure of the third layer, and FIG. 5 (g). Is a state diagram after development, and FIG. 5 (h) is a state diagram after baking.
[0119]
In FIG. 5, 11 is a substrate, 12, 16, and 21 are first, second, and third layers formed by applying a photosensitive paste, 13, 31, and 41 are masks, 14, 17, and Reference numeral 22 is exposure light, 15, 18 and 23 are latent images, 24 is a development pattern, and 25 is a wiring pattern.
[0120]
In the present embodiment, the masks 13, 31, 41 used in FIG. 5B, FIG. 5D, and FIG. 5F are different, and specifically, the opening width is the mask 13, 31, 41. The development pattern 24 is produced in the same manner as the method of the third embodiment except that the narrow ones are used in order, and finally the development pattern 24 having different line widths in the upper, middle, and lower sides as shown in FIG. Formed.
[0121]
Furthermore, as shown in FIG. 5H, the desired wiring pattern 25 was formed by firing. The firing at this time was performed at around 500 ° C.
[0122]
The thickness of the wiring pattern 25 after firing was about 14 μm, and the lowermost line width was about 75 μm. In this case, the lowest portion of the film thickness in the cross section of the wiring pattern 25 is about 14 μm at the center portion, the highest portion is about 16 μm at the end portion, and the edge curl amount is about 1.2 times to form the wiring pattern 25. did it.
[0123]
As described above, the film formation and exposure were repeated three times, and the edge curl could be greatly reduced by proceeding from the development step onward in a three-layer configuration.
[0124]
Since the edge curl is reduced in this way, even when the insulating layer is formed on the wiring pattern 25, the generation of bubbles is reduced, and the generation of holes or the growth of bubbles is also reduced by the lamination, and an electrode is formed thereon. The number of short-circuit defects is very small.
[0125]
In addition, since there are few edge curls, the number of steps does not increase without increasing the number of insulating layers to be stacked in a later step, and there is an extra step when forming the upper layer wiring. There was not.
[0126]
In addition, since the edge curl portion is less prominent in the terminal portion, the edge curl portion is not broken even when flexible mounting is performed, and contact failure does not occur.
[0127]
Further, even if the flex was replaced, there was no problem that the line of the wiring pattern 25 was missing.
[0128]
(Sixth embodiment)
FIG. 6 is a schematic diagram showing a manufacturing process of the wiring according to the present embodiment. As in the second embodiment, FIG. 6 (a) is a state diagram after film formation of a photosensitive paste, FIG. 6 (b) is a state diagram after exposure, and FIG. 6 (c) is a second layer composition. FIG. 6D is a state diagram after exposure of the second layer, FIG. 6E is a state diagram after development, and FIG. 6F is a state diagram after baking.
[0129]
In the present embodiment, the same mask 13 is used in FIGS. 6B and 6D, which are the exposure steps, but the distance between the mask 13 and the photosensitive paste film formation surface at the time of exposure is different. 6 (b) is longer than FIG. 6 (d), about 500 μm, and the distance in FIG. 6 (d) is 100 μm. Other than that, it formed by the method similar to 2nd Embodiment.
[0130]
In this way, as shown in FIG. 6E, a development pattern 19 in which the line width of the pattern after development was narrower on the upper side than on the lower side could be formed.
[0131]
Furthermore, this was baked and the wiring pattern 20 as shown in FIG.6 (f) was produced. The firing at this time was performed at around 500 ° C. The thickness of the wiring pattern 20 after firing was about 14 μm, and the line width was about 75 μm on the lower side and about 65 μm on the upper side.
[0132]
In this case, the lowest part of the film thickness in the cross section of the wiring pattern 20 is about 14 μm at the center, the highest part is about 17 μm at the end, and the edge curl amount is about 1.2 times to form the wiring pattern 20. did it.
[0133]
According to the present embodiment, it is possible to change the line width of each layer of the photosensitive paste with one mask 13, and it is not necessary to prepare a plurality of masks with the original effect of suppressing edge curl. There was an advantage.
[0134]
Since the edge curl is reduced in this way, even when the insulating layer is formed on the wiring pattern 20, the generation of bubbles is reduced, and the generation of holes or the growth of bubbles is also reduced by the lamination, and an electrode is formed thereon. There are very few defects that cause short circuit.
[0135]
In addition, since there are few edge curls, the number of steps does not increase without increasing the number of insulating layers to be stacked in a later step, and there is an extra step when forming the upper layer wiring. There was not.
[0136]
In addition, since the edge curl portion is less prominent in the terminal portion, the edge curl portion is not broken even when flexible mounting is performed, and contact failure does not occur.
[0137]
Further, even if the flex was replaced, there was no problem that the line of the wiring pattern 20 was missing.
[0138]
(Seventh embodiment)
In the present embodiment, the electron source and the image forming apparatus are formed using the wiring manufacturing method of the second embodiment.
[0139]
Hereinafter, the manufacturing method of the electron source and the image forming apparatus according to the present embodiment will be described with reference to FIGS.
[0140]
(1) The surface of the soda glass is sputtered to SiO ₂ A substrate 11 which is a rear plate formed with a thickness of 0.5 μm was prepared.
[0141]
(2) SiO ₂ 1000 pairs of the electrodes 2 and 3 were formed in the X direction and 5000 pairs in the Y direction (FIG. 7A).
[0142]
In FIG. 7, for simplicity of explanation, a total of nine electron-emitting devices, three sets in the X direction and three sets in the Y direction, are shown.
[0143]
In the present embodiment, Pt is used as the material for the electrodes 2 and 3. The electrodes 2 and 3 were formed using a photolithography method. The distance between the electrode 2 and the electrode 3 was 20 μm.
[0144]
(3) A photosensitive paste is applied to the entire surface of the rear plate substrate 11 on which the electrodes 2 and 3 are formed in the same manner as in the second embodiment. Layer 12 was formed (see FIG. 2A).
[0145]
The photosensitive paste used in this embodiment is the same as that used in the second embodiment, and is a photosensitive organic material that cures in response to Ag particles and ultraviolet rays as a conductive material. An acrylic resin and a glass filler added thereto were used.
[0146]
(4) Thereafter, the first layer 12 made of the photosensitive paste is dried, and the dried first layer 12 is irradiated with ultraviolet exposure light 14 using a light shielding mask 13 having a plurality of stripe-shaped openings (exposure). (See FIG. 2 (b)).
[0147]
(5) Next, the photosensitive paste used in the step (3) is further applied on the first layer 12 having the exposed region 15 and the unexposed region, and the second layer 16 made of the photosensitive paste is applied. It formed (refer FIG.2 (c)).
[0148]
(6) Thereafter, the second layer 16 is dried, and the exposure light 17 of ultraviolet rays is irradiated to the dried second layer 16 using the light shielding mask 13 having a plurality of stripe-shaped openings used in the step (4). (Exposure) (see FIG. 2D).
[0149]
In this step (6), exposure was performed so that the exposed region 18 of the second layer 16 substantially overlaps the region 15 exposed in the step (4).
[0150]
(7) Subsequently, by washing the substrate 11 of the rear plate with an organic solvent, unexposed portions of the first layer 12 and the second layer 16 are collectively removed (developed) to form a development pattern 19 ( FIG. 2 (e)).
[0151]
(8) Further, by firing the substrate 11 of the rear plate, as the wiring pattern 20 shown in FIG. 2 (f), 5000 column-directional wirings 4 having a width of 50 μm were formed at a pitch of 180 μm (FIG. 7 (b)). . In this step (8), a part of the electrode 3 is covered with the column-direction wiring 4, so that the electrode 3 and the column-direction wiring 4 are connected.
[0152]
(9) Next, using a printing method, an insulating paste containing a glass binder and a resin is applied to each intersection of the row direction wiring 6 formed in the next step and the column direction wiring 4 already formed, The insulating layer 5 was formed by baking (FIG. 8A).
[0153]
(10) Using a screen printing method, a paste containing Ag particles, a glass binder, and a resin was applied in a line pattern and baked to form 1000 row-directional wirings 6 (FIG. 8B). In this step (10), part of the electrode 2 is covered with the row-direction wiring 6, so that the electrode 2 and the row-direction wiring 6 are connected. The row direction wiring 6 was formed so as to have a width of 150 μm and an interval pitch of 500 μm.
[0154]
In this embodiment, the wiring pattern 20 shown in FIG. 2F formed by the method of the second embodiment is exemplified by the column-direction wiring 4, but is not limited to this. Similarly, the row direction wiring 6 may be formed by the wiring pattern 20 shown in FIG. 2F, and at least one (or both of them) may be formed by this method.
[0155]
(11) Next, an aqueous solution containing Pd was applied to the gaps between all the electrodes 2 and 3. Then, the conductive film 7 for electron emission made of PdO was formed by firing in the atmosphere at 350 ° C. (FIG. 9A).
[0156]
In this embodiment, a piezo-type ink jet apparatus, which is one of ink jet methods, is used for applying the ink. In the present embodiment, as the ink containing Pd, an aqueous solution of organic Pd compound: 0.15%, isopropyl alcohol: 15%, ethylene glycol: 1%, polyvinyl alcohol: 0.05% was used.
[0157]
Through the above process, an electron source substrate (rear plate) before forming was formed.
[0158]
(12) The pre-forming electron source substrate created in the above-described process is placed in a vacuum chamber, and the chamber is filled with 10 ^-Four After evacuating to Pa, in a state where hydrogen was introduced, each column direction wiring 4 was set to 0 V, and a “forming process” in which a pulsed voltage was sequentially applied to the row direction wiring 6 was performed. By this step, a current was passed through each electron emission conductive film 7 to form a gap in a part of each electron emission conductive film 7.
[0159]
In the forming process, a constant voltage pulse of 5 V was repeatedly applied.
[0160]
The pulse width and pulse interval of the voltage waveform were triangular waves with 1 msec and 10 msec, respectively. At the end of the energization forming process, the resistance value of the electron emission conductive film 7 was set to 1 MΩ or more.
[0161]
(13) A process called an activation process was performed on the element after the forming process. 10 inside the chamber ^-6 After exhausting to Pa, benzonitrile was 1.3 × 10 ^-Four Pa was introduced, each column direction wiring 4 was set to 0 V, and an “activation step” was performed in which a pulsed voltage was sequentially applied to the row direction wiring 6 repeatedly. By this process, a carbon film was formed on the inside of the gap of the electron emission conductive film 7 formed in the forming process and on the film in the vicinity of the gap, and the electron emission portion 8 was formed (FIG. 9B).
[0162]
In the activation step, a rectangular wave pulse voltage having a pulse peak value of 15 V and a pulse width of 1 msec and a pulse interval of 10 msec was applied to each element.
[0163]
The substrate 11 of the electron source (rear plate) on which a plurality of electron-emitting devices 74 shown in FIG.
[0164]
When the electric characteristics of the electron source substrate were evaluated, the insulation between the column direction wiring 4 and the row direction wiring 6 was sufficiently secured.
[0165]
Next, a method for producing the face plate 86 shown in FIG. 10 will be described.
[0166]
(14) First, the face plate substrate 83 made of the same material as the substrate 11 of the rear plate was sufficiently washed and dried. Thereafter, a black member was formed on the substrate 83 by using a photolithography method.
[0167]
Here, the black member was formed in a lattice shape so as to have openings corresponding to portions where the respective color phosphors are arranged. The pitch of the black member in the Y direction is the same as the pitch of the column direction wiring 4, and the pitch in the X direction is the same as the pitch of the row direction wiring 6.
[0168]
(15) Red, blue, and green phosphors were formed in the openings of the black member using a screen printing method.
[0169]
(16) Further, a filming layer is formed on the black member and the phosphor. As a material for the filming layer, a polymethacrylate resin dissolved in an organic solvent was applied by a screen printing method and dried.
[0170]
(17) Next, Al was formed on the filming layer by vapor deposition.
[0171]
(18) Thereafter, by heating the face plate 86, the resin and the filming layer contained in the phosphor paste are removed, and the image forming member 84, which is a phosphor layer made of a phosphor and a black member, A face plate 86 having a metal back 85 formed on a substrate 83 was obtained.
[0172]
(19) A spacer (not shown) having a high-resistance film on the surface and an outer frame 82 provided in advance with a joining member are arranged between the rear plate substrate 11 and the face plate 86 formed by the above steps. .
[0173]
Then, in a state where the face plate 86 and the substrate 11 of the rear plate were sufficiently aligned, the joining members were softened by heating and pressurizing in vacuum to join the members. By this sealing step, an envelope (display panel) 88 shown in FIG. 12 was obtained as an image forming apparatus in which the inside was maintained at a high vacuum.
[0174]
The high resistance film provided on the surface of the spacer is to release charges accumulated on the surface of the spacer to the row direction wiring 6 or the metal back 85 by irradiating the surface of the spacer with electrons.
[0175]
The spacer is brought into contact with the row direction wiring (wiring to which the scanning signal is applied) 6 so as not to block the trajectory of the electron beam emitted from the horizontal electron-emitting device.
[0176]
Further, this is because of the ease of alignment with the spacer.
[0177]
A drive circuit was connected to the lead-out wiring portion derived from the inside of the display panel 88 obtained as described above through a flexible cable, and a moving image was displayed by line sequential scanning.
[0178]
In the present embodiment, a scanning signal is applied to the row direction wiring 6 having a large cross-sectional area of the wiring, and a modulation signal is applied to the column direction wiring 4.
[0179]
When a moving image was displayed on the display panel 88 in this way, a very high-definition and high-brightness image was obtained for a long time. Further, even when the flexible cable was connected to the extraction portion of the row direction wiring 6 and the column direction wiring 4, no chipping or the like occurred. Also, pixel defects that appear to be caused by the discharge phenomenon did not occur.
[0180]
The display panel 88 may be configured to use a rear plate substrate 81 that fixes the substrate 11 separately from the substrate 11 as in the prior art shown in FIG.
[0181]
【The invention's effect】
As described above, the present invention has made it possible to produce a conductive film with little edge curl. For this reason, when a conductive film is used as a wiring, the factor of inclusion of bubbles accompanying the lamination of the insulating layer on the wiring performed in a later process is eliminated, and the deterioration of the interlayer insulating characteristics can be prevented, and the insulating property can be prevented. Will improve.
[0182]
Further, since the edge curl of the conductive film is small, it is no longer necessary to increase the number of insulating layers to be implemented later. For this reason, when an upper layer wiring is further formed on the insulating layer, an extra step is not generated.
[0183]
Further, since the rising edge of the edge curl portion is also small in the wiring take-out portion, the edge curl portion is not damaged or poorly contacted even when flexible mounting is performed. Moreover, the problem of missing thick-film wiring lines no longer occurs even if the flex is replaced.
[0184]
For this reason, a large-screen, flat-plate type image forming apparatus equipped with an electron-emitting device also has high performance without causing pixel defects that may be caused by a discharge phenomenon.
[Brief description of the drawings]
FIG. 1 is a process diagram showing a wiring manufacturing method according to a first embodiment;
FIG. 2 is a process diagram showing a wiring manufacturing method according to a second embodiment;
FIG. 3 is a process diagram showing a method for manufacturing a wiring according to a third embodiment;
FIG. 4 is a process diagram showing a wiring manufacturing method according to a fourth embodiment;
FIG. 5 is a process diagram showing a wiring manufacturing method according to a fifth embodiment;
FIG. 6 is a process diagram showing a wiring manufacturing method according to a sixth embodiment;
FIG. 7 is a process diagram showing an electron source manufacturing method according to a seventh embodiment;
FIG. 8 is a process diagram showing a method of manufacturing an electron source according to a seventh embodiment.
FIG. 9 is a process diagram showing a method of manufacturing an electron source according to a seventh embodiment.
FIG. 10 is a schematic configuration diagram illustrating an image forming apparatus according to a seventh embodiment.
FIG. 11 is a schematic view showing an example of a surface conduction electron-emitting device.
FIG. 12 is a schematic configuration diagram showing a conventional image forming apparatus.
FIG. 13 is a process diagram showing a conventional method for manufacturing a wiring;
[Explanation of symbols]
2, 3 electrodes
4 Row direction wiring
5 Insulation layer
6 row wiring
7 Conductive film for electron emission
8 Electron emission part
11 Substrate
12, 16, 21 layers
13, 13 ', 31, 41 Mask
14, 17, 22 Exposure light
15, 18, 23 Latent image
19, 24 Development pattern
20, 25 Wiring pattern
74 Electron emitter
82 Outer frame
83 Face plate substrate
84 Image forming members
85 metal back
86 Face plate
88 Display panel

Claims (13)

A film forming step of forming a film containing a photosensitive material and a conductive material on a substrate;
An exposure step of irradiating a desired region of the film formed by the film-forming step with light so that an exposure amount is smaller in a peripheral portion than in a central portion thereof to form a latent image on the film;
A developing step of removing a non-latent image region of the film after the exposure step to form a developed image;
And a baking step of baking the developed image formed by the developing step. The light is irradiated a plurality of times in the exposure process, the racemate Rukoto different the size of the exposed region in the second and subsequent light irradiation and first light irradiation, exposure in the peripheral portion than the central portion The method for producing a conductive film according to claim 1 , wherein the number is reduced . A film forming process for forming a film containing a photosensitive material and a conductive material; and an exposure process for irradiating a desired area of the film formed by the film forming process with light to form a latent image on the film; , Sequentially repeating a plurality of times, laminating the films, and integrating the latent images of each layer to form a laminated film in which a laminated latent image is formed;
After formation of the laminated film, it was removed dividing the non-latent image areas of the laminated film, and a developing step of forming a developed image,
And a baking step of baking the developed image formed by the developing step. In the step of forming the laminated film, the size of the exposure region is made different between the second and subsequent exposure steps to be laminated and the first exposure step on the substrate, so that the second and subsequent layers are laminated. 4. The method for producing a conductive film according to claim 3, wherein the latent image is formed smaller than the first latent image on the substrate. In the exposure step, the Rukoto changing the size of the opening in the mask having an opening for irradiating light to the desired area of the membrane, wherein, wherein Selle different size of the exposure area Item 5. A method for producing a conductive film according to Item 2 or 4. In the exposure step, the desired region by Rukoto changing the distance between the film during light irradiation of the mask having an opening for irradiating light into, characterized by Selle different the size of the exposure area of the film The method for producing a conductive film according to claim 2 or 4.   The method for producing a conductive film according to claim 1, wherein a film thickness after the baking step is 5 μm or more. A first wiring and a second wiring arranged in a matrix via an insulating layer, and the electron-emitting device formed at the intersection of the second wiring and the first wiring, the electron-emitting device the emitted electrons to a method for producing images forming apparatus comprising an image forming member for forming an image, the,
8. A method for manufacturing an image forming apparatus, wherein at least one of the first wiring and the second wiring is formed by the method for manufacturing a conductive film according to claim 1. . (A) a film forming step of forming a film containing a photosensitive material and a conductive material on a substrate;
(B) an exposure step of irradiating light to a desired region of the film including the photosensitive material and the conductive material formed by the film formation step a plurality of times;
(C) In the film having the region exposed by the exposure step and the unexposed region, a developing step of removing the unexposed region when the photosensitive material is negative, and removing the exposed region when positive. ,
(D) A step of baking the film that has undergone the development step. (A) a film forming step for forming a film containing a photosensitive material and a conductive material; and (B) a desired region of the film including the photosensitive material and the conductive material formed by the film forming step. And a step of forming a laminated film in which a plurality of films each having an exposed region and an unexposed region are formed by repeating the exposure step of irradiating light multiple times,
(C) In the laminated film, when the photosensitive material is a negative type, the unexposed area, and when the photosensitive material is a positive type, a developing step of removing the exposed area;
(D) A method for producing a conductive film, comprising a step of firing the laminated film that has undergone the development step. The method of manufacturing a conductive film according to claim 9 or 10, wherein the film forming step is performed by applying a paste containing the photosensitive material and the conductive material.   The method for manufacturing a conductive film according to claim 9, wherein the conductive material is a metal.   The method for manufacturing a conductive film according to claim 9, wherein the conductive material is made of conductive particles.

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