JP3997527B2 - Method for producing Ru-Al intermetallic compound target, Ru-Al intermetallic compound target, and magnetic recording medium - Google Patents
Method for producing Ru-Al intermetallic compound target, Ru-Al intermetallic compound target, and magnetic recording medium Download PDFInfo
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- JP3997527B2 JP3997527B2 JP2003093647A JP2003093647A JP3997527B2 JP 3997527 B2 JP3997527 B2 JP 3997527B2 JP 2003093647 A JP2003093647 A JP 2003093647A JP 2003093647 A JP2003093647 A JP 2003093647A JP 3997527 B2 JP3997527 B2 JP 3997527B2
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- 229910000765 intermetallic Inorganic materials 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 18
- 238000005245 sintering Methods 0.000 claims description 15
- 238000005452 bending Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 24
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000000365 skull melting Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000011978 dissolution method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005495 investment casting Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
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Description
【０００１】
【発明の属する技術分野】
本発明は、主として磁気ディスク装置用などの磁気記録媒体の下地層を形成するために用いられるＢ２規則格子からなるＲｕ−Ａｌ金属間化合物ターゲットの製造方法、Ｒｕ−Ａｌ金属間化合物ターゲットおよび磁気記録媒体に関するものである。
【０００２】
【従来の技術】
従来Ｃｏ系磁性層は、高密度な磁気記録が可能なように発展してきた。一般に磁性層をエピタキシャル成長させるために、磁性層の下に下地層が形成される。この下地層に対しては、磁性層を健全なエピタキシャル成長させるために、格子定数、結晶配向性、結晶粒度および膜の均一性の改良が行われている。たとえば、従来の下地層としては、Ｃｏ系磁性層との格子定数の整合性から、純ＣｒおよびＣｒ合金が主流である。
【０００３】
最近、Ｂ２規則格子金属間化合物の下地膜が提案されている（例えば、特許文献１参照）。上述した特許文献１には、Ｂ２規則格子金属間化合物を、Ｃｒ下地の代わりに直接磁性膜を形成する下地膜として使用すること、および純Ｃｒの下地膜のさらに下地になる膜として使用することが提案されている。特に、純Ｃｒのさらに下地となる膜として使用すると、Ｃｒ膜の結晶粒をより微細とすることができ、高保磁力の磁気記録媒体が得られることが報告されている。
【０００４】
【特許文献１】
欧州特許出願公開第０７０４８３９号明細書
【０００５】
【発明が解決しようとする課題】
本発明者が上述のＢ２規則格子金属間化合物の下地層を検討したところ、格子定数がＣｏ系磁性層と近いこと、結晶配向性および膜の微細均一性でＣｏ系磁気記録媒体の下地層に適していることを確認した。このＢ２規則格子金属間化合物の下地層を作製する方法としては、上述した文献等に記載されるようにＲＦスパッタリング法などが使用できる。スパッタリング法においては、膜組成の供給源となるターゲットが必要となる。
【０００６】
本発明者はＢ２規則格子金属間化合物の均一な膜を形成するための化合物ターゲットを作製することを検討した。そして、Ｂ２規則格子金属間化合物からなるターゲットを溶解法で作製したところ抗折力が低く加工中に破断するといった問題が発生した。Ｂ２規則格子金属間化合物の鋳造ターゲットは、ある程度微細なチル晶、粗大でかつ冷却方向に依存する柱状晶、そしてある程度微細な等軸晶が形成され粒径が大きくばらついてしまうことを確認した。結晶粒のばらつきは、パーティクルの発生の原因になるばかりでなく、成膜した時の薄膜の膜厚がばらつく原因になる。こうなると下地膜としてその上面に形成する薄膜をエピタキシャル成長させにくくなり、結果として磁気記録特性を劣化する原因となる。
本発明の目的は、Ｂ２規則格子であるＲｕ−Ａｌ金属間化合物からなる高抗折力の金属間化合物ターゲットの製造方法、その製造方法によって作製されるターゲットと磁気記録媒体を提供することである。
【０００７】
【課題を解決するための手段】
本発明者は、Ｂ２規則格子金属間化合物ターゲットの抗折力はターゲットのミクロ組織に大きく依存することを見いだした。そして、鋳造ターゲットで確認された結晶粒の大きなばらつきを防止しする手段として焼結ターゲットとすることが必要であることを見いだした。さらに、この金属間化合物ターゲットとしては、予め反応焼結法によりＢ２規則格子からなる金属間化合物粉末に調整し、これを焼結したターゲットが、高抗折力を確保できることを見いだし、本発明に到達した。
【０００８】
すなわち本発明は、金属Ｒｕ粉末と金属Ａｌ粉末とを反応焼結法により、実質的にＢ２規則格子からなるＲｕ−Ａｌ金属間化合物とし、次いで該金属間化合物を粉砕したＲｕ−Ａｌ金属間化合物粉末を焼結するＲｕ−Ａｌ金属間化合物ターゲットの製造方法である。
【０００９】
また、本発明は、上記の製造方法で作製した実質的にＢ２規則格子からなるＲｕ−Ａｌ金属間化合物粉末の焼結体でなるＲｕ−Ａｌ金属間化合物ターゲットである。上記ターゲットは、相対密度を９９％以上であることが好ましい。さらに、平均結晶粒径を２００μｍ以下であることが望ましい。また、上述した条件を満たすことにより、従来にない抗折力を２５０ＭＰａ以上のターゲットを得ることができる。また、ターゲット中の酸素量は６０００ｐｐｍ以下が好ましい。
【００１０】
また、本発明は、上述したＲｕ−Ａｌ金属間化合物ターゲットで成膜した実質的にＢ２規則格子からなるＲｕ−Ａｌ金属間化合物膜を、Ｃｏ系磁性膜と非磁性基板の間に形成する下地膜の少なくとも１層とする磁気記録媒体である。
【００１１】
【発明の実施の形態】
本発明においては、Ｂ２規則格子金属間化合物ターゲットを、反応焼結法を用いて作製した粉末を使用して焼結法で得たことが重要な特徴である。特にＲｕ−ＡｌのＢ２規則格子金属間化合物は、融点が２０００℃を超えるため、焼結用原料粉末作製方法として、溶解法で製造したインゴットを粉砕して焼結原料粉末とする方法は、溶解工程においてスカル溶解等によって炉材との反応を避ける必要があり高価なものとなり、さらに、密度の高いインゴット粉砕するには時間がかかるとともに、不純物が混入する原因となるという問題もある。また、アトマイズ法により焼結原料を作製する方法は、融点が高いために溶湯の温度低下によるノズルの目詰まりやノズルとの反応といった問題がある。
【００１２】
そのため、本発明では、溶解工程を必要としない反応焼結法により金属間化合物としたものを粉砕して焼結原料粉末とする。この方法は、例えば、減圧雰囲気もしくは不活性ガス雰囲気のチャンバー内で、Ｒｕ粉末とＡｌ粉末の混合粉末をアーク、火花、電流等で着火、あるいはチャンバー内を温度上昇させることにより、混合粉末の反応を誘発することで、ＲｕとＡｌの化合時の自己発熱を利用して反応焼結させるものである。Ｒｕ−Ａｌ系の反応焼結法は、自己発熱を利用できるため、高融点でありながら特殊な溶解設備を必要とせず、容易に目的とする組成系の金属間化合物の作製ができるという点で優れた方法である。また、反応焼結法により作製したＲｕ−ＡｌからなるＢ２規則格子金属間化合物は、隙間の多い多孔質焼結体であるため、粉砕が容易であるという利点もある。本発明のターゲットは、上述した方法で得られた金属間化合物を粉砕して粉末とし、これを焼結することによって得ることができる。
【００１３】
また、本発明においては、ターゲットの作製に焼結法を適用することも大きな特徴である。溶解法により金属間化合物ターゲットを得る場合で問題となる結晶粒の粗大化による抗折力の低下を抑えることが可能となるためである。
【００１４】
本発明において、相対密度が９９％以上とすることにより、密度に依存する抗折力の低下を防止することができる。また、平均結晶粒径を２００μｍ以下と微小なものとすることは、結晶粒の持つ方位の違いよるスパッタリング速度の差を低減でき、均一な膜を得ることにおいて有利である。より好ましくは３０μｍ以下とする。また、微細な結晶粒は、微細な歪みを吸収する結晶粒界を多く有することになり、抗折力を向上するという点でも有利であり、２５０ＭＰａ以上の高い抗折力を得ることができる。ターゲット中の酸素量が６０００ｐｐｍを超えるとターゲット中の酸化物量が増大しスパッタ中に異常放電やパーティクルといった問題が急激に増大し問題となることがある。さらに、ターゲット中の酸素量が６０００ｐｐｍを超えると成膜した膜中の第２相の量が増加し整合性の低下等により磁気特性が悪くなる。
【００１５】
また、Ｒｕ−Ａｌ金属間化合物ターゲットで成膜したＢ２規則格子からなるＲｕ−Ａｌ金属間化合物膜を、Ｃｏ系磁性膜と非磁性基板の間に形成する下地膜の少なくとも１層とすることにより、パーティクルの発生が少なく、膜厚のばらつきも少ない安定な磁気記録媒体の製造を行うことができる。少なくとも１層と規定するのは、Ｂ２規則格子薄膜の上に直接Ｃｏ系磁性膜を形成しても良いが、たとえばＢ２規則格子薄膜の上にＣｒやＣｒ合金層といった磁気記録媒体としての保磁力角形比の増加が期待できる薄膜を配置することが可能であることを意味するものである。
【００１６】
【実施例】
表１に示す、試料１は所望の組成となるようにそれぞれの単体金属粉末を混合した後、反応焼結法によりＢ２規則格子金属間化合物とした。ついでボールミルで粉砕し粉末を作製した。各々の粉末を１２００℃×１００ＭＰａ×３ｈの条件で焼結させて、φ１０１×４ｔ(mm)のターゲットを作製した。さらに、試料９は所望の組成になるようにスカル溶解法で溶解し、精密鋳造してのφ１０１のターゲットを作製した。
【００１７】
それぞれのターゲットの抗折力、密度およびインターセプト法による体積平均径による平均結晶粒径を表１に示す。また、図１に本発明のターゲットの典型的な組織を示す例として、試料１と同様に製造した１００倍の焼結体のミクロ組織を示す。表１および図１を見て明らかなように、本発明によれば、金属間化合物粉末を焼結することにより高密度および微結晶粒であって、高抗折力のターゲットが得られたことがわかる。
【００１８】
【表１】
試料１および９のターゲットにより成膜した基板上の２μｍ以上の異物の数を測定した。また、比較例のターゲットにより成膜した基板上の２μｍ以上の異物の数も測定した。測定した異物の数を表２に示す。ただし、表２の異物の数は、試料１のターゲットにより成膜した基板上の２μｍ以上の異物の数を１００として表している。表２に示すように、本発明のターゲットは、従来のターゲットに比べて異物の発生を抑制できることがわかる。
【００２０】
【表２】
【発明の効果】
本発明により、高抗折力のＢ２構造を有するＲｕ−Ａｌ金属間化合物ターゲットを提供することができるため、ターゲットの取り扱いが容易になるとともに、異物の発生を低減でき、高品質の磁気記録媒体を提供することが可能となる。
【図面の簡単な説明】
【図１】本発明のターゲットの典型的な組織を示すミクロ組織顕微鏡写真である。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for producing a Ru—Al intermetallic compound target composed of a B2 ordered lattice, which is mainly used for forming an underlayer of a magnetic recording medium for a magnetic disk device, a Ru—Al intermetallic compound target, and magnetic recording. It relates to the medium.
[0002]
[Prior art]
Conventionally, Co-based magnetic layers have been developed to enable high-density magnetic recording. In general, in order to epitaxially grow a magnetic layer, an underlayer is formed under the magnetic layer. For this underlayer, the lattice constant, the crystal orientation, the crystal grain size, and the film uniformity are improved in order to achieve a healthy epitaxial growth of the magnetic layer. For example, as a conventional underlayer, pure Cr and Cr alloy are mainly used because of lattice constant matching with a Co-based magnetic layer.
[0003]
Recently, a base film of a B2 ordered lattice intermetallic compound has been proposed (see, for example, Patent Document 1). In the above-described Patent Document 1, the B2 ordered lattice intermetallic compound is used as a base film that directly forms a magnetic film instead of a Cr base, and is used as a film that further becomes a base of a pure Cr base film. Has been proposed. In particular, it has been reported that when a pure Cr film is used as an underlying film, the crystal grains of the Cr film can be made finer, and a magnetic recording medium having a high coercive force can be obtained.
[0004]
[Patent Document 1]
European Patent Application No. 0704839 Specification
[Problems to be solved by the invention]
When the present inventor studied the underlayer of the above-mentioned B2 ordered lattice intermetallic compound, it was found that the lattice constant is close to that of the Co-based magnetic layer, the crystal orientation and the fine uniformity of the film make the underlying layer of the Co-based magnetic recording medium. Confirmed that it was suitable. As a method for producing the base layer of the B2 ordered lattice intermetallic compound, an RF sputtering method or the like can be used as described in the above-mentioned literature. In the sputtering method, a target serving as a film composition supply source is required.
[0006]
The present inventor has studied to prepare a compound target for forming a uniform film of B2 ordered lattice intermetallic compound. And when the target which consists of a B2 ordered lattice intermetallic compound was produced by the melt | dissolution method, the problem that the bending strength was low and it fractured | ruptured during processing generate | occur | produced. It was confirmed that the casting target of the B2 ordered lattice intermetallic compound formed fine chill crystals to some extent, columnar crystals that were coarse and dependent on the cooling direction, and fine equiaxed crystals to some extent, resulting in large variations in particle size. The variation in crystal grains not only causes generation of particles, but also causes variations in the thickness of the thin film during film formation. In this case, it becomes difficult to epitaxially grow a thin film formed on the upper surface as a base film, resulting in deterioration of magnetic recording characteristics.
An object of the present invention is to provide a method for producing a high bending strength intermetallic compound target made of a Ru-Al intermetallic compound which is a B2 ordered lattice, a target produced by the production method, and a magnetic recording medium. .
[0007]
[Means for Solving the Problems]
The present inventor has found that the bending strength of the B2 ordered lattice intermetallic compound target greatly depends on the microstructure of the target. And it discovered that it was necessary to set it as a sintering target as a means to prevent the big dispersion | variation in the crystal grain confirmed with the casting target. Furthermore, as this intermetallic compound target, it was found that the intermetallic compound powder composed of B2 ordered lattice was prepared in advance by a reactive sintering method, and the sintered target was able to ensure a high bending strength. Reached.
[0008]
That is, the present invention provides a Ru—Al intermetallic compound in which a metal Ru powder and a metal Al powder are made into a Ru—Al intermetallic compound substantially consisting of a B2 ordered lattice by a reactive sintering method, and then the intermetallic compound is pulverized. It is a manufacturing method of the Ru-Al intermetallic compound target which sinters powder.
[0009]
In addition, the present invention is a Ru-Al intermetallic compound target made of a sintered body of Ru-Al intermetallic compound powder substantially made of B2 ordered lattice produced by the above production method. The target preferably has a relative density of 99% or more. Furthermore, the average crystal grain size is desirably 200 μm or less. Moreover, by satisfying the above-described conditions, a target having an unconventional bending strength of 250 MPa or more can be obtained. Moreover, the amount of oxygen in the target is preferably 6000 ppm or less.
[0010]
In the present invention, a Ru—Al intermetallic compound film substantially composed of a B2 ordered lattice formed with the above-described Ru—Al intermetallic compound target is formed between a Co-based magnetic film and a nonmagnetic substrate. A magnetic recording medium having at least one layer of a ground film.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
In the present invention, it is an important feature that a B2 ordered lattice intermetallic compound target is obtained by a sintering method using a powder prepared by a reactive sintering method. In particular, the Ru-Al B2 ordered lattice intermetallic compound has a melting point of over 2000 ° C. Therefore, as a method of preparing a raw material powder for sintering, a method of pulverizing an ingot produced by a melting method to form a sintered raw material powder is In the process, it is necessary to avoid reaction with the furnace material by skull melting or the like, which is expensive, and further, there is a problem that it takes time to pulverize the ingot with high density and causes impurities to be mixed. In addition, the method of producing a sintered raw material by the atomizing method has problems such as clogging of the nozzle due to a decrease in the temperature of the molten metal and reaction with the nozzle because the melting point is high.
[0012]
Therefore, in this invention, what was made into the intermetallic compound by the reactive sintering method which does not require a melt | dissolution process is grind | pulverized, and it is set as sintering raw material powder. In this method, for example, a mixed powder of Ru powder and Al powder is ignited by arc, spark, electric current, etc. in a reduced pressure atmosphere or an inert gas atmosphere, or the temperature of the inside of the chamber is increased, thereby reacting the mixed powder. Is induced to react and sinter using self-heating during the combination of Ru and Al. Since the Ru-Al reaction sintering method can utilize self-heating, it has a high melting point and does not require special melting equipment, and can easily produce an intermetallic compound having a desired composition. It is an excellent method. Further, the B2 ordered lattice intermetallic compound made of Ru—Al produced by the reactive sintering method is a porous sintered body having many gaps, and therefore has an advantage that it can be easily pulverized. The target of the present invention can be obtained by pulverizing the intermetallic compound obtained by the above-described method into a powder and sintering it.
[0013]
Further, in the present invention, it is also a great feature that a sintering method is applied to the production of the target. This is because it is possible to suppress a decrease in bending strength due to coarsening of crystal grains, which is a problem when obtaining an intermetallic compound target by a melting method.
[0014]
In the present invention, when the relative density is 99% or more, it is possible to prevent a decrease in the bending strength depending on the density. Further, making the average crystal grain size as small as 200 μm or less can reduce the difference in sputtering rate due to the difference in orientation of crystal grains, and is advantageous in obtaining a uniform film. More preferably, it is 30 μm or less. Further, fine crystal grains have many crystal grain boundaries that absorb fine strain, which is advantageous in terms of improving the bending strength, and a high bending force of 250 MPa or more can be obtained. If the amount of oxygen in the target exceeds 6000 ppm, the amount of oxide in the target increases, and problems such as abnormal discharge and particles may increase rapidly during sputtering. Furthermore, if the oxygen content in the target exceeds 6000 ppm, the amount of the second phase in the deposited film increases and the magnetic properties deteriorate due to a decrease in consistency.
[0015]
Further, by forming a Ru—Al intermetallic compound film made of B2 ordered lattice formed with a Ru—Al intermetallic compound target as at least one layer of a base film formed between a Co-based magnetic film and a nonmagnetic substrate. Therefore, it is possible to manufacture a stable magnetic recording medium with less generation of particles and less variation in film thickness. The at least one layer may be defined by forming a Co-based magnetic film directly on the B2 ordered lattice thin film. For example, a coercive force as a magnetic recording medium such as a Cr or Cr alloy layer on the B2 ordered lattice thin film. This means that it is possible to arrange a thin film that can be expected to increase the squareness ratio.
[0016]
【Example】
Sample 1 shown in Table 1 was mixed with each single metal powder so as to have a desired composition, and then made into a B2 ordered lattice intermetallic compound by a reactive sintering method. Subsequently, it was pulverized with a ball mill to prepare a powder. Each powder was sintered under conditions of 1200 ° C. × 100 MPa × 3 h to prepare a target of φ101 × 4 t (mm). Further, the sample 9 was melted by a skull melting method so as to have a desired composition, and a target of φ101 was produced by precision casting.
[0017]
Table 1 shows the average crystal grain size of each target according to the bending strength, density, and volume average diameter according to the intercept method. FIG. 1 shows a microstructure of a 100-fold sintered body produced in the same manner as Sample 1, as an example showing a typical structure of the target of the present invention. As is apparent from Table 1 and FIG. 1, according to the present invention, by sintering the intermetallic compound powder, a high-dense and fine crystal grain target having high bending strength was obtained. I understand.
[0018]
[Table 1]
The number of foreign matters having a size of 2 μm or more on the substrates formed by the targets of Samples 1 and 9 was measured. In addition, the number of foreign matters of 2 μm or more on the substrate formed with the target of the comparative example was also measured. Table 2 shows the number of foreign substances measured. However, the number of foreign substances in Table 2 represents 100 as the number of foreign substances of 2 μm or more on the substrate formed by the target of Sample 1. As shown in Table 2, it can be seen that the target of the present invention can suppress the generation of foreign matter compared to the conventional target.
[0020]
[Table 2]
【The invention's effect】
According to the present invention, a Ru-Al intermetallic compound target having a B2 structure having a high bending strength can be provided, so that the handling of the target can be facilitated and the generation of foreign matters can be reduced. Can be provided.
[Brief description of the drawings]
FIG. 1 is a microstructural micrograph showing a typical structure of a target of the present invention.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003093647A JP3997527B2 (en) | 2003-03-31 | 2003-03-31 | Method for producing Ru-Al intermetallic compound target, Ru-Al intermetallic compound target, and magnetic recording medium |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003093647A JP3997527B2 (en) | 2003-03-31 | 2003-03-31 | Method for producing Ru-Al intermetallic compound target, Ru-Al intermetallic compound target, and magnetic recording medium |
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| Application Number | Title | Priority Date | Filing Date |
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| JP19198398A Division JP2000017433A (en) | 1998-07-07 | 1998-07-07 | B2 rule lattice intermetallic compound target and magnetic recording medium |
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| JP2003328118A JP2003328118A (en) | 2003-11-19 |
| JP3997527B2 true JP3997527B2 (en) | 2007-10-24 |
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| JP2003093647A Expired - Fee Related JP3997527B2 (en) | 2003-03-31 | 2003-03-31 | Method for producing Ru-Al intermetallic compound target, Ru-Al intermetallic compound target, and magnetic recording medium |
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| KR100898746B1 (en) * | 2007-08-17 | 2009-05-25 | 희성금속 주식회사 | Fabrication method of a high density and single-phased RuAl intermetallic compound by powder metallurgy process |
| KR100885698B1 (en) * | 2007-08-17 | 2009-02-26 | 희성금속 주식회사 | Fabrication method of single-phased Ru-base intermetallic compound for high temperature |
| KR101249566B1 (en) * | 2009-07-27 | 2013-04-01 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Cu-Ga SINTERED BODY SPUTTERING TARGET AND METHOD FOR PRODUCING THE TARGET |
| DE102010060937A1 (en) * | 2010-12-01 | 2012-06-06 | Universität des Saarlandes | Reactive metallic multilayers and methods for producing reactive metallic multilayers |
| TWI834072B (en) * | 2021-10-22 | 2024-03-01 | 光洋應用材料科技股份有限公司 | Ru-al alloy target and method of preparing the same |
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