JP3989182B2 - 強磁性ｉｉｉ−ｖ族系化合物及びその強磁性特性の調整方法 - Google Patents

強磁性ｉｉｉ−ｖ族系化合物及びその強磁性特性の調整方法 Download PDF

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JP3989182B2
JP3989182B2 JP2001059195A JP2001059195A JP3989182B2 JP 3989182 B2 JP3989182 B2 JP 3989182B2 JP 2001059195 A JP2001059195 A JP 2001059195A JP 2001059195 A JP2001059195 A JP 2001059195A JP 3989182 B2 JP3989182 B2 JP 3989182B2
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Japan
Prior art keywords
ferromagnetic
group
transition metal
metal element
compound
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JP2001059195A
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Japanese (ja)
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JP2002255695A (ja
JP2002255695A5 (enrdf_load_stackoverflow
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博 吉田
和則 佐藤
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Priority to JP2001059195A priority Critical patent/JP3989182B2/ja
Application filed by Japan Science and Technology Agency, National Institute of Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Priority to KR10-2003-7011104A priority patent/KR100531514B1/ko
Priority to EP02701657A priority patent/EP1367151A1/en
Priority to PCT/JP2002/001889 priority patent/WO2002070793A1/ja
Priority to US10/468,833 priority patent/US20040112278A1/en
Priority to CNB028058283A priority patent/CN1313656C/zh
Priority to TW091103879A priority patent/TWI254088B/zh
Publication of JP2002255695A publication Critical patent/JP2002255695A/ja
Publication of JP2002255695A5 publication Critical patent/JP2002255695A5/ja
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JP2001059195A 2001-03-02 2001-03-02 強磁性ｉｉｉ−ｖ族系化合物及びその強磁性特性の調整方法 Expired - Fee Related JP3989182B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001059195A JP3989182B2 (ja) 2001-03-02 2001-03-02 強磁性ｉｉｉ−ｖ族系化合物及びその強磁性特性の調整方法
EP02701657A EP1367151A1 (en) 2001-03-02 2002-02-28 Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
PCT/JP2002/001889 WO2002070793A1 (fr) 2001-03-02 2002-02-28 Compose ferromagnetique monocristallin sur la base du groupe ii-vi ou du groupe iii-v et procede pour adapter ses caracteristiques ferromagnetiques
US10/468,833 US20040112278A1 (en) 2001-03-02 2002-02-28 II-IV group or III-V compound based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
KR10-2003-7011104A KR100531514B1 (ko) 2001-03-02 2002-02-28 Ⅱ-ⅵ족 또는 ⅲ-ⅴ족계 단결정(單結晶) 강자성(强磁性)산화물및 그 강자성 특성의 조정방법
CNB028058283A CN1313656C (zh) 2001-03-02 2002-02-28 Ⅱ－ⅵ族或ⅲ－ⅴ族系单结晶铁磁性化合物及其铁磁性特性的调整方法
TW091103879A TWI254088B (en) 2001-03-02 2002-03-01 Single crystalline ferromagnetic compounds of II-VI group or III-V group and the adjustment method of their ferromagnetic properties

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001059195A JP3989182B2 (ja) 2001-03-02 2001-03-02 強磁性ｉｉｉ−ｖ族系化合物及びその強磁性特性の調整方法

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JP2002255695A JP2002255695A (ja) 2002-09-11
JP2002255695A5 JP2002255695A5 (enrdf_load_stackoverflow) 2004-08-12
JP3989182B2 true JP3989182B2 (ja) 2007-10-10

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1788589A4 (en) * 2004-09-10 2009-01-14 Univ Osaka ANTIFERROMAGNETIC SEMICONDUCTED SEMICONDUCTOR AND METHOD OF MANUFACTURING THEREOF
KR100666729B1 (ko) 2005-07-11 2007-01-09 한국과학기술연구원 ＺｎＳ 나노벨트 상온 자성반도체 제조방법
CN101710524B (zh) * 2009-12-02 2011-08-17 中国科学院半导体研究所 一种制备InAs室温铁磁性半导体材料的方法
CN110620176A (zh) * 2019-08-30 2019-12-27 松山湖材料实验室 制备磁性半导体外延薄膜的方法及其制品

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