JP3980274B2 - Chemical vapor deposition apparatus and film forming method using the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a chemical vapor deposition apparatus and a film forming method using the same, and more particularly to a chemical vapor deposition apparatus capable of forming a film on a substrate having a relatively large area and a film forming method using the same. is there.
[0002]
[Prior art]
With the increase in size and definition of liquid crystal display devices using thin film transistors (TFTs), higher definition of TFTs is required. For this reason, the need for a TFT using a polysilicon film is increasing in place of the conventional TFT using an amorphous silicon film. The performance and reliability of a TFT using an amorphous silicon film or a polysilicon film depends on the gate insulating film. Such a gate insulating film is formed by a plasma CVD method.
[0003]
One of the plasma CVD apparatuses currently in use is a parallel plate type plasma CVD apparatus. In the parallel plate type plasma CVD apparatus, plasma is generated in a relatively wide region between the upper electrode and the lower electrode.
[0004]
When a gate insulating film is formed by such a plasma CVD apparatus, damage due to ions in plasma on a base film on which the gate insulating film is formed or an interface between the gate insulating film and the base film cannot be avoided. For this reason, the threshold voltage in the TFT cannot be controlled with high accuracy.
[0005]
An ECR plasma CVD apparatus using the ECR plasma CVD method has been studied as a method for avoiding such damage and forming a high-quality gate insulating film. In the ECR plasma CVD apparatus, electron cyclotron resonance is caused by a magnetic field in a chamber (reaction chamber), and the frequency thereof is matched with the microwave frequency, thereby generating high-density plasma.
[0006]
In addition, so-called photo-CVD apparatuses that use light without using plasma in order to completely eliminate damage caused by ions in the plasma have been studied. In the photo-CVD apparatus, film formation is performed by exciting a reaction gas (material gas) with light.
[0007]
Further, a CVD apparatus including a reaction chamber using the above-described photo-CVD method and a reaction chamber using plasma has been studied.
[0008]
[Problems to be solved by the invention]
However, the conventional CVD apparatus described above has the following problems. In the case of a CVD apparatus using plasma, the reaction between the plasma and the material gas proceeds while spreading in a predetermined space. For example, monosilane (SiH as a material gas)_Four), The dissociation of monosilane proceeds and higher order silane is likely to be generated.
[0009]
For this reason, large molecules including higher-order silanes are adsorbed on the growth surface of the insulating film, which prevents diffusion of the growth surface, or such molecules are taken into the insulating film. The film quality may be deteriorated.
[0010]
Further, in the ECR plasma CVD apparatus, for example, an insulating film having a uniform film quality and film thickness can be formed on a substrate having a relatively small area of up to about 8 inches, but a relatively large area used for a liquid crystal display device. In this glass substrate, it was difficult to form an insulating film having a uniform film quality and film thickness.
[0011]
Furthermore, although it is possible to form an insulating film in a photo-CVD apparatus, there is a problem that the film forming speed is slow and the denseness of the insulating film is poor.
[0012]
Further, in a CVD apparatus having a reaction chamber using a photo-CVD method and a reaction chamber using a plasma, for example, when a film is formed by the plasma CVD method after the film formation by the photo-CVD method, the substrate is placed on one side. There was a problem that it took time to move from the reaction chamber to the other reaction chamber, and the throughput of the CVD apparatus was lowered.
[0013]
Further, when the substrate is moved, dust may adhere to the substrate surface, and there is a problem that desired uniformity cannot be obtained in the film quality and film thickness of the insulating film to be formed thereafter.
[0014]
In addition, since the photo-CVD method has a slower film formation speed than the plasma CVD method, this has a problem that the throughput is limited and the throughput of the entire CVD apparatus is deteriorated. Furthermore, when trouble occurs in one of the reaction chambers, the operation of all the apparatuses must be stopped, and the throughput further deteriorates.
[0015]
The present invention has been made to solve the above-mentioned problems, and one object is to provide a chemical vapor deposition apparatus that can form a film having a uniform film quality and film thickness on a substrate and can obtain a high throughput. Another object is to provide a film forming method using the same.
[0016]
[Means for Solving the Problems]
  A chemical vapor deposition apparatus according to one aspect of the present invention includes a reaction chamber, a pair of electrode units, a stage unit, and a light source.PartI have. The pair of electrode portions are arranged in the reaction chamber so as to face each other with a gap therebetween, and generate plasma in the reaction chamber. The stage unit is disposed in a region sandwiched between the pair of electrode units and holds the substrate. The light source is in the reaction chamberRegion sandwiched between a pair of electrode partsThe plasma generation region is irradiated with light having a predetermined wavelength.
[0017]
  According to this configuration, the material introduced into the reaction chamber with less RF power as RF power for generating plasma by irradiating the plasma generation region with light of a predetermined wavelength in addition to plasma. Gas dissociation takes place. Thereby, the damage to the board | substrate by plasma can be reduced. Also,By disposing the light source unit in the region sandwiched between the pair of electrode units, the light generated from the light source unit is irradiated to the plasma generation region without being absorbed by other parts, and the dissociation of the material gas is caused. It becomes easy to proceed. further,The light is also applied to the surface on which the film grows, and migration energy is given to radicals and ions generated in the plasma and attached to the surface, thereby promoting the densification of the film. As a result, a film having uniform film quality and film thickness and excellent electrical characteristics can be formed relatively quickly on the substrate. Furthermore, since plasma is generated in one reaction chamber and the plasma generation region is irradiated with light, the reaction chamber in which the plasma is generated and the reaction chamber in which the light is irradiated are separate from each other. Since it is not necessary to transport the substrate, throughput can be improved.
[0018]
Preferably, the light source unit includes a light source main body and a cover that covers the light source main body, and the cover is made of a material that substantially transmits light emitted from the light source.
[0019]
In this case, a reaction product or the like does not adhere to the light source body, and light having a substantially constant intensity can always be irradiated by replacing the cover.
[0020]
  Preferably, one electrode part of the pair of electrode parts includes a stage part, and the light source part is placed on the surface of the substrate in a region sandwiched between the other electrode part of the pair of electrode parts and the substrate. Are arranged at a distance from each other.And a moving mechanism for sliding the substrate parallel to the surface of the substrate.
[0021]
  In this case, by irradiating the plasma generation region with light from a plurality of light source units, the material gas can be efficiently dissociated with less RF power and further densification of the film on the surface of the substrate can be further promoted. . In addition, since the plasma generation region is limited, damage to the substrate can be further reduced, and generation of higher order silane can be suppressed when silane is applied as a material gas, for example.By providing the moving mechanism, it is possible to form a film with higher uniformity in film quality and film thickness by being uniformly irradiated with light within the surface of the substrate.
[0024]
  A film forming method according to another aspect of the present invention includes the following steps. A substrate is held on one electrode part of a pair of electrode parts for generating plasma arranged in the reaction chamber.A light source that emits light of a predetermined wavelength is disposed in a region sandwiched between a pair of electrode portions;Before or at the same time as the plasma is generated in the region sandwiched between the held substrate and the other electrode portion of the pair of electrode portionsFrom the light sourceIrradiate light of a predetermined wavelength. A material gas is introduced into the plasma generation region to form a predetermined film on the substrate.
[0025]
  According to this film forming method, in addition to the plasma, the plasma generation region is irradiated with light of a predetermined wavelength, so that the RF power for generating the plasma is introduced into the reaction chamber with less RF power. The material gas is dissociated. Thereby, the damage to the board | substrate by a plasma is suppressed. Also,By disposing the light source unit in the region sandwiched between the pair of electrode units, the light generated from the light source unit is irradiated to the plasma generation region without being absorbed by other parts, and the dissociation of the material gas proceeds. It becomes easy. further,The light is also applied to the surface on which the film grows, and migration energy is given to radicals and ions generated in the plasma and attached to the surface, thereby promoting the densification of the film. As a result, a film having uniform film quality and film thickness and excellent electrical characteristics can be formed relatively quickly and stably on the substrate.
[0026]
Preferably, in the reaction chamber, a plurality of light source units are arranged at a distance along the surface of the substrate in a region sandwiched between the other electrode unit and the substrate, and a predetermined film is formed in the film forming step It is performed while moving parallel to the surface of
[0027]
In this case, the plasma generation region is irradiated with light from a plurality of light source units, so that the material gas can be efficiently dissociated with less RF power and the film densification on the surface of the substrate can be further promoted. At the same time, the plasma generation region is limited, so that damage to the substrate can be further reduced. For example, when silane is applied as a material gas, generation of higher order silane can be suppressed. Further, by forming the film while moving the substrate, the film can be formed uniformly within the substrate surface.
[0028]
DETAILED DESCRIPTION OF THE INVENTION
Embodiment 1
A chemical vapor deposition apparatus (hereinafter referred to as “CVD apparatus”) according to Embodiment 1 of the present invention will be described. As shown in FIG. 1, in this CVD apparatus, a pair of parallel plate type electrodes of an upper electrode 1 serving as a cathode electrode and a lower electrode 2 serving as an anode electrode are arranged in a reaction chamber 11. Here, the volume of the reaction chamber 11 is, for example, 25000 cm.^ThreeIt was. The upper electrode 1 was a square having a side of 300 mm. Further, the distance between the upper electrode 1 and the lower electrode 2 was set to 50 mm.
[0029]
The upper electrode 1 is electrically connected to a power source 13 via a matching box 12 for adjusting impedance. The lower electrode 2 is provided with a heater (not shown) inside, and a substrate 7 is placed thereon.
[0030]
A light source 4 is installed in a region sandwiched between the upper electrode 1 and the lower electrode 2. The light source 4 is a linear light source. In order to protect the light source 4, the light source 4 is covered with a transparent insulating material 3 such as quartz. The insulating material 3 has a square cross-sectional shape having a length of 300 mm and a side of 40 mm, for example. The light source 4 is, for example, 300 mm long and 30 mm in diameter. The light source 4 is arranged on the mask 6 for easy fixation, but may be arranged away from the mask 6.
[0031]
The wavelength of the light source 4 is selected according to the absorption coefficient of the material gas (reactive gas). In this case, an excimer lamp having a wavelength of 172 nm is used as the light source 4. An output monitor 5 of the light source 4 is attached inside the insulating material 3. The output monitor 5 measures the deterioration state of the light source 4.
[0032]
The material of the insulating material 3 depends on the wavelength of the light source 4. When quartz is used as the insulating material 3, some absorption is observed for light having a wavelength of 172 nm. On the other hand, when magnesium fluoride is used as the material of the insulating material 3, the absorption for this wavelength is further reduced. However, in view of price and material stability, magmagnesium fluoride is not suitable for a relatively large shape, and quartz is preferable in practice.
[0033]
In the case of this CVD apparatus, the light intensity of the excimer lamp used as the light source 4 is, for example, 50 mW / cm.²And the light intensity after passing through the insulating material 3 made of quartz is about 30 mW / cm.²It was. The insulating material 3 can be periodically cleaned alone and can be replaced.
[0034]
At the time of film formation, for example, a silicon substrate 7 is fixed on the lower electrode 2 by a mask 6. Plasma 8 is generated in a region between the upper electrode 1 and the lower electrode 2. The light source 4 of the excimer lamp is turned on simultaneously with the generation of the plasma, or is turned on before the plasma is generated. The substrate 7 may be a glass substrate or a substrate made of a resin material in addition to a silicon substrate.
[0035]
In the above-described CVD apparatus, monosilane (SiH_Four) Gas and dinitrogen monoxide (N₂O) Gas as raw material gas, SiO₂A case where an insulating film made of the above is formed will be described as an example.
[0036]
First, the reaction of the source gas in the plasma proceeds as follows.
SiH_Four+ E → SiH_Three+ H + e
N₂O + e → N + NO
SiH_Three+ NO → SiH_ThreeNO
2SiH_ThreeNO → (SiH_Three)₂O + N₂O
Here, the bond energy of Si—H is about 3 eV, and the bond energy of NN is about 10 eV. Therefore, since the bond energy of NN is higher, SiH_FourAnd N₂Given the first reaction with O, N₂It can be seen that O is less likely to dissociate.
[0037]
For this reason, when the RF power supplied from the power source 13 to the upper electrode 1 is low, N₂Oxygen supplied from O is small, and a film with poor oxygen quality is formed. That is, in this reaction, SiH_FourN against₂O becomes insufficient. To avoid this, SiH_FourIt is necessary to form the film in a supply-controlled state. Specifically, it is desirable to supply RF power of, for example, 0.3 W or more per unit area (one square centimeter) of the upper electrode 1.
[0038]
On the other hand, when the RF power increases, the plasma potential increases and the ion energy for the substrate 7 increases. For this reason, damage to the underlying film due to ions is increased and interface defects are increased. In addition, SiO₂Defects in the insulating film made of these are also limited in reduction due to damage caused by ions. For this reason, it is necessary to appropriately control the RF power.
[0039]
Next, a method for forming an insulating film using the above-described CVD apparatus will be described. First, after placing a silicon substrate 7 on the lower electrode 2, SiH is placed in the reaction chamber 11._Four(Flow rate: 0.003-0.01 L / min (3-10 sccm)), N₂O (flow rate: 1 L / min (1000 sccm)) is introduced, and the pressure is adjusted to 93.1 to 199.5 Pa (0.7 to 1.5 Torr).
[0040]
An RF power of 13.56 MHz is supplied from the power source 13 to the upper electrode 1 through the matching box 12 to generate plasma 8 in a region between the upper electrode 1 and the lower electrode 2. At this time, the RF power is set to a lower RF power as compared with the case where the film is formed only by the plasma CVD method. Specifically, it is desirable to set RF power of, for example, 0.3 W or less per unit area (one square centimeter) of the upper electrode 1. In this case, as described above, N₂O is not sufficiently dissociated.
[0041]
Simultaneously with supplying the RF power, the light source 4 (excimer lamp) covered with the insulating material 3 is turned on. At this time, since the light source 4 is disposed between the upper electrode 1 and the lower electrode 2, plasma 8 is generated in the very vicinity of the light source 4. For this reason, the light emitted from the light source 4 is irradiated to the generation region of the plasma 8 without being absorbed by other portions. As a result, the energy of the irradiated light is received and N₂O dissociation easily proceeds and oxygen is supplied abundantly, so that defects and fixed charges due to lack of oxygen can be suppressed.
[0042]
Where SiH_FourAnd N₂The absorption coefficient of O is shown in FIG. As shown in FIG. 2, in the wavelength region of 165 nm to 200 nm, N₂O absorption coefficient is SiH_FourIs greater than the absorption coefficient. Therefore, by irradiating the light source 4 with light in the wavelength region of 165 to 200 nm, relatively N₂Dissociation of O can be promoted.
[0043]
The light emitted from the light source 4 not only promotes the dissociation of the reaction gas, but a part of the light is also applied to the surface of the substrate 7. Migration light is given to radicals and ions (nuclide) generated in the plasma adsorbed on the surface by the light applied to the surface on which the insulating film grows. Migration energy refers to energy in which nuclides are adsorbed on the growth surface of the insulating film and diffuse on the surface of the insulating film. Therefore, this has the effect of assisting the densification of the film when the temperature of the substrate 7 is relatively low.
[0044]
Next, a description will be given of the results of evaluating the insulating films obtained when light irradiation is performed by the light source 4 and when light irradiation is not performed. First, FIG. 3 is a graph evaluating the RF power dependence of the leakage current. As shown in FIG. 3, it was found that when the light was irradiated, the leakage current was relatively decreased as compared with the case where the light was not irradiated.
[0045]
FIG. 4 is a graph evaluating the RF power dependence of the fixed charge density. As shown in FIG. 4, when the light was irradiated, it was found that the fixed charge density was relatively decreased as compared with the case where the light was not irradiated. Thus, it was found that an insulating film having a small leakage current and a fixed charge density can be obtained by using plasma and light in combination. In particular, it was found that the difference appears remarkably in the region where the RF power is lower.
[0046]
As described above, by using a CVD apparatus using both plasma and light, an insulating film with a small leakage current and a small fixed charge density can be formed with a relatively low RF power.
[0047]
In addition, since the plasma 8 is generated in one reaction chamber 11 and light is irradiated to the generation region of the plasma 8, the reaction chamber in which the plasma is generated and the reaction chamber in which the light is irradiated are separated. Compared with, it is not necessary to transport the substrate 7, so that the throughput can be improved.
[0048]
In this embodiment, a silicon substrate is taken as an example of the substrate, but a film can also be formed on a glass substrate having a relatively large area.
[0049]
Embodiment 2
A CVD apparatus according to Embodiment 2 of the present invention will be described. As shown in FIG. 5, a plurality of light sources 4 are installed in a region between the upper electrode 1 and the lower electrode 2. The lower electrode 2 on which the substrate 7 is placed is provided with a moving mechanism (not shown) for sliding the substrate 7. Since the other configuration is the same as that of the CVD apparatus shown in FIG. 1 described in the first embodiment, the same members are denoted by the same reference numerals and description thereof is omitted.
[0050]
In the above-described CVD apparatus, since a plurality of light sources 4 are installed, the region where the plasma 10 is generated is limited to a narrow region as compared with the CVD device described in the first embodiment. As a result, monosilane SiH_FourHowever, before the side reaction is repeatedly caused, the probability of exiting from the generation region of the plasma 10 is increased, and the generation of higher order silane is suppressed.
[0051]
When high-order silane is generated, large molecules containing high-order silane adsorb on the surface of the insulating film to prevent diffusion on the growth surface, or are taken into the insulating film and cause defects, which causes deterioration of the insulating film. Will produce. Therefore, in this CVD apparatus, the generation of such high-order silane is suppressed, so that deterioration of the insulating film can be prevented.
[0052]
By the way, since the region where the plasma 10 is generated is limited to a narrow region, a region where an insulating film is formed and a region where the insulating film is not formed exist on the substrate 7. In this CVD apparatus, since the lower electrode 2 is provided with a moving mechanism, the substrate 7 can be moved in one direction or in both directions with respect to the light source 4, and an insulating film is uniformly formed on the entire surface of the substrate 7. Can be formed.
[0053]
Next, a film forming method using the above-described CVD apparatus will be described. Here, the volume of the reaction chamber 11, the area and interval between the upper electrode 1 and the lower electrode, and the dimensions of the light source 4 and the insulating material 3 are the same as those in the CVD apparatus of the first embodiment. The periphery of the substrate 7 made of a wafer placed on the lower electrode 2 is covered with a mask 6.
[0054]
The insulating material 3 positioned on the periphery of the substrate 7 is disposed on the mask 6, and the insulating material 3 positioned on the inner side of the periphery of the substrate 7 is not disposed on the mask 6. The distance between the adjacent insulating materials 3 is set to 20 to 50 mm.
[0055]
Although the insulating material 3 located on the periphery of the substrate 7 is disposed on the mask 6, it may be disposed away from the mask 6. Moreover, although the wafer was mentioned as the example as the board | substrate 7, the board | substrate which consists of a glass substrate and resin in addition to this may be sufficient.
[0056]
An excimer lamp is used as the light source 4 and the light intensity thereof is, for example, 50 mW / cm.²And the light intensity after passing through the insulating material 3 is about 30 mW / cm.²And The temperature of the heater provided in the lower electrode 2 is set to 350 ° C.
[0057]
SiH in the reaction chamber 11_Four(Flow rate: 0.003-0.01 L / min (3-10 sccm)), N₂O (flow rate: 1 L / min (1000 sccm)) is introduced, and the pressure is adjusted to 93.1 to 199.5 Pa (0.7 to 1.5 Torr). This material gas is supplied into the reaction chamber 11 from a shower plate (not shown) having a plurality of ejection openings that also serve as the upper electrode 1.
[0058]
An RF power of 13.56 MHz is supplied from the power supply 13 to the upper electrode 1 through the matching box 12 to generate plasma 10 in a region between the upper electrode 1 and the lower electrode 2. At this time, the plasma 10 is. It is generated in a region sandwiched by the insulating material 3 between the upper electrode 1 and the lower electrode. Further, the light source 4 is turned on at the same time as the RF power is supplied.
[0059]
Further, as described in the first embodiment, N (light-ultraviolet light) emitted from the light source 4 is N.₂Dissociation of O is promoted. For this reason, as RF power, for example, 0.3 W / cm²The RF power is set to be lower than that in the case of forming a film only by the following plasma CVD method. Further, during film formation, the substrate 7 is moved in one direction or both directions with respect to the light source 4. In this way, an insulating film is formed on the substrate 7.
[0060]
In this CVD apparatus, in particular, a plurality of light sources 4 are arranged between the upper electrode 1 and the lower electrode 2 so that N₂O is dissociated efficiently. As a result, the RF power can be set even smaller, generation of higher order silane can be further suppressed, and densification of the film can be promoted. In addition, damage to the base film of the substrate 7 due to ions in the plasma can be further reduced.
[0061]
In the CVD apparatus described in the first and second embodiments, the case where an insulating film (silicon oxide film) is formed as a film has been described as an example. However, the present invention can also be applied to the formation of an amorphous silicon film or a silicon nitride film. I found out.
[0062]
The embodiment disclosed this time is to be considered as illustrative in all points and not restrictive. The present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
[0063]
【The invention's effect】
  According to the chemical vapor deposition apparatus in one aspect of the present invention, the RF power for generating plasma is reduced by irradiating the plasma generation region with light of a predetermined wavelength in addition to plasma. The material gas introduced into the reaction chamber is dissociated with power. Thereby, the damage to the board | substrate by plasma can be reduced. Also,By disposing the light source unit in the region sandwiched between the pair of electrode units, the light generated from the light source unit is irradiated to the plasma generation region without being absorbed by other parts, and the dissociation of the material gas is caused. It becomes easy to proceed. further,The light is also applied to the surface on which the film grows, and migration energy is given to radicals and ions generated in the plasma and attached to the surface, thereby promoting the densification of the film. As a result, a film having uniform film quality and film thickness and excellent electrical characteristics can be formed relatively quickly on the substrate. Furthermore, since plasma is generated in one reaction chamber and the plasma generation region is irradiated with light, the reaction chamber in which the plasma is generated and the reaction chamber in which the light is irradiated are separate from each other. Since it is not necessary to transport the substrate, throughput can be improved.
[0064]
Preferably, the light source unit includes a light source main body and a cover portion that covers the light source main body, and the cover portion is made of a material that substantially transmits light emitted from the light source unit. By replacing the cover portion, it is possible to always irradiate light with a substantially constant intensity.
[0065]
  Preferably, one electrode part of the pair of electrode parts includes a stage part, and the light source part is placed on the surface of the substrate in a region sandwiched between the other electrode part of the pair of electrode parts and the substrate. A plurality of light sources are arranged at a distance from each other, so that light is emitted to the plasma generation region by a plurality of light source units, and material gas is efficiently dissociated with less RF power and the film density on the surface of the substrate is reduced. Can be further promoted. In addition, since the plasma generation region is limited, damage to the substrate can be further reduced, and generation of higher order silane can be suppressed when silane is applied as a material gas, for example.In addition, by providing a moving mechanism that slides the substrate parallel to the surface of the substrate, light can be evenly irradiated within the surface of the substrate to form a film with higher uniformity of film quality and film thickness. .
[0067]
  According to the film forming method of another aspect of the present invention, the plasma generation region is irradiated with light of a predetermined wavelength in addition to the plasma, so that the RF power for generating the plasma is less RF power. Thus, dissociation of the material gas introduced into the reaction chamber is performed. Thereby, the damage to the board | substrate by a plasma is suppressed. Also,By disposing the light source unit in the region sandwiched between the pair of electrode units, the light generated from the light source unit is irradiated to the plasma generation region without being absorbed by other parts, and the dissociation of the material gas proceeds. It becomes easy. further,The light is also applied to the surface on which the film grows, and migration energy is given to radicals and ions generated in the plasma and attached to the surface, thereby promoting the densification of the film. As a result, a film having uniform film quality and film thickness and excellent electrical characteristics can be formed relatively quickly and stably on the substrate.
[0068]
Preferably, in the reaction chamber, a plurality of light source portions are arranged at a distance along the surface of the substrate in a region sandwiched between the other electrode portion and the substrate, so that the material gas can be efficiently used with less RF power. It can be well dissociated to form a film on the substrate, and the plasma generation region is limited, so that damage to the substrate can be further reduced. For example, when silane is applied as a material gas, higher order silane Can be suppressed. Further, in the film forming process for forming the predetermined film, the film can be formed uniformly in the substrate surface by forming the film while moving the substrate parallel to the surface of the substrate.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a CVD apparatus according to Embodiment 1 of the present invention.
FIG. 2 shows SiH in the same embodiment._FourAnd N₂It is a figure which shows the wavelength dependence of the absorption coefficient of O.
FIG. 3 is a diagram showing RF power dependence of a leakage current for explaining characteristics of an insulating film in the embodiment.
FIG. 4 is a diagram showing the RF power dependence of the fixed charge density for explaining the characteristics of the insulating film in the embodiment.
FIG. 5 is a cross-sectional view of a CVD apparatus according to Embodiment 2 of the present invention.
[Explanation of symbols]
1 upper electrode, 2 lower electrode, 3 insulating material, 4 light source, 5 light monitor, 6 mask, 7 substrate, 8, 10 plasma, 11 reaction chamber, 12 matching box, 13 power source.

Claims (5)

A reaction chamber;
A pair of electrode portions disposed in the reaction chamber so as to face each other at an interval, and for generating plasma in the reaction chamber;
A stage portion for holding a substrate, disposed in a region sandwiched between the pair of electrode portions;
A chemical vapor deposition apparatus, comprising: a light source unit disposed in a region sandwiched between the pair of electrode units in the reaction chamber and irradiating light having a predetermined wavelength to the plasma generation region. The light source unit is
A light source body;
A cover that covers the light source body,
The chemical vapor deposition apparatus according to claim 1, wherein the cover is made of a material that substantially transmits light emitted from the light source. One electrode part of the pair of electrode parts includes the stage part,
A plurality of the light source parts are arranged at a distance along the surface of the substrate in a region sandwiched between the other electrode part of the pair of electrode parts and the substrate, respectively .
The chemical vapor deposition apparatus according to claim 1, further comprising a moving mechanism that slides the substrate parallel to a surface of the substrate . Holding the substrate on one of the pair of electrode portions for generating plasma disposed in the reaction chamber;
A light source unit that emits light of a predetermined wavelength is disposed in a region sandwiched between the pair of electrode units, and is sandwiched between the held substrate and the other electrode unit of the pair of electrode units Irradiating light of a predetermined wavelength from the light source unit before or at the same time as the plasma is generated;
A film forming step of introducing a material gas into the plasma generation region to form a predetermined film on the substrate;
A film forming method comprising: In the reaction chamber, a plurality of the light source units are arranged at a distance along the surface of the substrate in a region sandwiched between the other electrode unit and the substrate,
The film forming method according to claim 4, wherein the film forming step is performed while moving the substrate parallel to the surface of the substrate .

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