JP3979737B2 - 電気的特性測定用装置および電気的特性測定方法 - Google Patents

電気的特性測定用装置および電気的特性測定方法 Download PDF

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JP3979737B2
JP3979737B2 JP33431998A JP33431998A JP3979737B2 JP 3979737 B2 JP3979737 B2 JP 3979737B2 JP 33431998 A JP33431998 A JP 33431998A JP 33431998 A JP33431998 A JP 33431998A JP 3979737 B2 JP3979737 B2 JP 3979737B2
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gas
probe
inert gas
gas ejection
electrical characteristics
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JP2000164648A5 (enExample
JP2000164648A (ja
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一行 本多
照久 福田
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Oki Electric Industry Co Ltd
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Oki Electric Industry Co Ltd
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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP33431998A 1998-11-25 1998-11-25 電気的特性測定用装置および電気的特性測定方法 Expired - Fee Related JP3979737B2 (ja)

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JP33431998A JP3979737B2 (ja) 1998-11-25 1998-11-25 電気的特性測定用装置および電気的特性測定方法

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JP33431998A JP3979737B2 (ja) 1998-11-25 1998-11-25 電気的特性測定用装置および電気的特性測定方法

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JP2000164648A JP2000164648A (ja) 2000-06-16
JP2000164648A5 JP2000164648A5 (enExample) 2005-12-15
JP3979737B2 true JP3979737B2 (ja) 2007-09-19

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3260332B2 (ja) * 1999-01-22 2002-02-25 松下電器産業株式会社 検査装置及びそれを用いた検査方法
US7063992B2 (en) * 2003-08-08 2006-06-20 Solid State Measurements, Inc. Semiconductor substrate surface preparation using high temperature convection heating
JP5067280B2 (ja) * 2008-06-25 2012-11-07 株式会社デンソー 半導体ウエハ測定装置
JP5562320B2 (ja) * 2011-12-08 2014-07-30 三菱電機株式会社 半導体試験装置および半導体試験方法
JP5894854B2 (ja) * 2012-05-11 2016-03-30 株式会社日立ハイテクノロジーズ 検査装置
JP2014139965A (ja) * 2013-01-21 2014-07-31 Sumitomo Electric Ind Ltd 耐圧測定装置および耐圧測定方法
JP6084469B2 (ja) 2013-01-28 2017-02-22 三菱電機株式会社 半導体評価装置および半導体評価方法
JP6504971B2 (ja) * 2015-08-20 2019-04-24 三菱電機株式会社 半導体チップテスト装置および半導体チップテスト方法

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