JP3975301B2 - Semiconductor device cleaning liquid and method for manufacturing semiconductor device using the same - Google Patents
Semiconductor device cleaning liquid and method for manufacturing semiconductor device using the same Download PDFInfo
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Description
【０００１】
【発明の属する技術分野】
本発明は、例えば、ケイ素（シリコン）を用いた半導体素子の製造工程において、ドライエッチング処理の際生じる堆積ポリマーの除去、即ち、１）特に絶縁膜層（層間絶縁膜ともいう）に形成されるヴィアホール（絶縁膜の下層に配線用に形成される金属導電膜層と前記絶縁膜の上層に形成される金属導電膜層とを接続するために絶縁膜に形成される接続孔）内部及びその周辺に生成付着した堆積ポリマーの除去、又は２）金属導電膜層を配線形成した後、側壁部などに生成付着した堆積ポリマーの除去に際し、これらの堆積ポリマーを好適に除去すると同時に半導体素子中に積層されている平坦化絶縁膜（ＳＯＧ膜）や金属膜などの材料に対する腐食性が極めて低い洗浄液に関するものである。
【０００２】
【従来の技術】
近年ＬＳＩ素子の高集積化、高速化を図る為、多層配線構造を備えたものが増えつつある。配線が多層化するにつれて、より急峻な段差が生じ、その上に上層配線を形成することは困難となるが、下層配線と上層配線の層間絶縁膜を平坦化することで解決が図られている。この平坦化絶縁膜は、例えばシラノールからなるスピンコート剤を回転塗布し、引き続き熱処理によりスピンコート剤をガラス化する方法、即ち、スピンオンガラス（ＳＯＧ）法によって作成される。
次いで、この多層膜に回路パターンが形成されるが、この形成法としてはドライエッチング法が主流をなしている。このドライエッチング処理においては、形成されたパターン周辺部にドライエッチングガス、レジスト及び被加工膜などに起因する堆積ポリマーが生成する。この堆積ポリマーはそのまま残存すると高抵抗化を招いたり、電気的に短絡を生じたりする為、好ましくない事態を招来する。この為、従来堆積ポリマーの除去にはフッ化水素酸やフッ化水素酸とフッ化アンモニウムを含有する処理液などを用いて洗浄することにより達成されてきた。しかしながらこの従来のフッ素化合物による処理方法では平坦化絶縁膜であるＳＯＧ膜を腐蝕し、層間剥離などの問題が生じる。
【０００３】
【発明が解決しようとする課題】
本発明は、このような状況下で、半導体素子の製造工程において、ドライエッチング処理の際に生じる堆積ポリマーの除去、特にヴィアホール内部及びその周辺に生成付着した堆積ポリマー、あるいは金属導電膜層を配線形成した後に側壁部などに生成付着した堆積ポリマーの除去を容易に行うことができ、しかもＳＯＧ膜及び金属膜を腐蝕することのない半導体素子製造用洗浄液を提供することを目的とするものである。
【０００４】
【課題を解決するための手段】
本発明者らは、前記目的を達成するために鋭意研究を重ねた結果、洗浄液としてホウ酸又はホウ酸エステルと、含フッ素化合物と、水溶性又は水混和性有機溶剤とを含有する水溶液を用いることにより、ドライエッチング処理の際に生じる堆積ポリマーを、ＳＯＧ膜及び金属膜を腐蝕することなく、容易に除去しうることを見いだした。本発明は、かかる知見に基づいて完成したものである。すなわち、本発明は、
（Ａ）ホウ酸又はホウ酸エステル又はリン酸と、（Ｂ）含フッ素化合物と、（Ｃ）水溶性又は水混和性有機溶剤とを含有する水溶液からなる半導体素子製造用洗浄液、およびこの洗浄液を使用し堆積ポリマーを除去して半導体素子を製造する方法を提供するものである。
【０００５】
【発明の実施の形態】
（Ａ）成分として使用されるホウ酸は、三酸化二ホウ素が水化して生ずる酸素酸であり、オルトホウ酸、メタホウ酸、四ホウ酸等が挙げられる。また、ホウ酸エステルは、下記式（１）で表される化合物である。
Ｂ（ＯＲ）m （ＯＨ）3-m （１）
（式中、ｍは１〜３の整数を示す。Ｒは炭素数１〜１８の炭化水素基を示し、例えば飽和又は不飽和の脂肪族基、飽和又は不飽和の芳香族基を示し、直鎖状、分岐状のいずれであってもよい。）上記飽和又は不飽和の脂肪属基の例としては、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ウンデシル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基、ヘキサデシル基、ヘプタデシル基、オクタデシル基、ビニル基、アリル基、プロペニル基、ブテニル基などが挙げられる。また、上記飽和又は不飽和の芳香族基の例としては、フェニル基、トルイル基、メシチル基、クメニル基、ベンジル基、フェネチル基などが挙げられる。また、ｍ＝２又は３において、炭化水素基は互いに同一であってもよく、異なっていてもよい。
上記のホウ酸、ホウ酸エステルはそれぞれ単独で用いてもよく、これら二種以上を組み合わせて用いてもよい。またこの（Ａ）成分の含有量は特に制限はなく、状況に応じて適宜選定されるが、通常は０．０００５〜１０重量％の範囲であり好ましくは０．００１〜４重量％、更に好ましくは０．０１〜１重量％の範囲で用いられる。この量が０．０００５重量％未満ではＳＯＧ膜が腐蝕されやすく、また、１０重量％を越えると堆積ポリマーの除去速度が遅くなる傾向が見られる。
【０００６】
次に、（Ｂ）成分として使用される含フッ素化合物として、下記（ａ）、（ｂ）の化合物が挙げられる。
（ａ）フッ化水素酸、フッ化アンモニウム、フッ化水素アンモニウム、三フッ化ホウ素、三フッ化アンチモン等の無機フッ素化合物。
（ｂ）下記式（２）で表される含フッ素脂肪族化合物。
本発明の洗浄液においては、この（Ｂ）成分の含フッ素化合物は単独で用いてもよく、二種以上を組み合わせて用いてもよい。また、その含有量はとくに制限はなく、状況に応じて適宜選定されるが、通常は０．１〜１５重量％の範囲である。好ましくは０．５〜１０重量％の範囲で用いられる。この量が０．１重量％未満では堆積ポリマーの除去速度が遅くて好ましくなく、また、１５重量％を越えると配線材料が腐蝕されやすくなる傾向が見られる。
【０００７】
また、本発明の洗浄液は（Ｃ）成分として、水溶性又は水混和性の有機溶剤が用いられる。このような有機溶剤としては、例えばホルムアミド；Ｎ−メチルホルムアミド；Ｎ，Ｎ−ジメチルホルムアミド；Ｎ，Ｎ−ジメチルアセトアミド；Ｎ−メチルピロリドンなどのアミド類、γ−ブチロラクトンなどのラクトン類、メタノール、エタノール、イソプロパノール、エチレングリコールなどのアルコール類、酢酸メチル、酢酸エチル、酢酸ブチル、乳酸メチル、乳酸エチルなどのエステル類、エチレングリコールモノブチルエーテル、ジエチレングリコールモノメチルエーテル及びジエチレングリコールモノエチルエーテルなどのグリコールエーテル類、さらにはジメチルスルホキシド、スルホランなどの硫黄化合物類などが挙げられる。
この（Ｃ）成分の有機溶剤は単独で用いてもよく、二種以上を混合して用いてもよい。また、その含有量は特に制限はなく、状況に応じて適宜選択されるが、通常は１〜８０重量％の範囲である。好ましくは５〜８０重量％の範囲で用いられ、より好ましくは１５〜８０重量％の範囲である。この量が１重量％未満では配線材料が腐蝕されやすく、かつ洗浄液の粘度が高くなって、作業性が悪くなるおそれがある。また、８０重量％を越えると堆積ポリマーの除去速度が遅くなる傾向がみられる。
【０００８】
本発明の洗浄液には更に、第四級アンモニウム塩を添加することができる。第四級アンモニウム塩としては、例えばテトラメチルアンモニウム炭酸水素塩、テトラメチルアンモニウム炭酸塩、テトラメチルアンモニウムギ酸塩、テトラメチルアンモニウム酢酸塩、テトラメチルアンモニウムプロピオン酸塩、テトラメチルアンモニウム酪酸塩、テトラメチルアンモニウムシュウ酸塩、テトラメチルアンモニウムマロン酸塩、テトラメチルアンモニウムマレイン酸塩、テトラメチルアンモニウムフマル酸塩、テトラメチルアンモニウムシトラコン酸塩、テトラメチルアンモニウム安息香酸塩、テトラメチルアンモニウムトルイル酸塩、テトラメチルアンモニウムフタル酸塩、テトラメチルアンモニウムアクリル酸塩、トリメチル（２−ヒドロキシエチル）アンモニウム炭酸水素塩、トリメチル（２−ヒドロキシエチル）アンモニウム炭酸塩、トリメチル（２−ヒドロキシエチル）アンモニウムギ酸塩、トリメチル（２−ヒドロキシエチル）アンモニウム酢酸塩、トリメチル（２−ヒドロキシエチル）アンモニウム安息香酸塩、トリメチル（２−ヒドロキシエチル）アンモニウムフタル酸塩、テトラエチルアンモニウム炭酸水素塩、テトラエチルアンモニウム炭酸塩、テトラエチルアンモニウムギ酸塩、テトラエチルアンモニウム酢酸塩、テトラプロピルアンモニウムギ酸塩、テトラプロピルアンモニウム酢酸塩、テトラブチルアンモニウムギ酸塩、テトラブチルアンモニウム酢酸塩、テトラメチルアンモニウムホウ酸塩、テトラメチルアンモニウムリン酸塩、テトラメチルアンモニウム硫酸塩、トリメチル（２−ヒドロキシエチル）アンモニウムホウ酸塩、トリメチル（２−ヒドロキシエチル）アンモニウムリン酸塩、トリメチル（２−ヒドロキシエチル）アンモニウム硫酸塩などが挙げられる。
上記の第四級アンモニウム塩は単独で用いてもよく、二種以上を組み合わせて用いてもよい。また、その含有量は特に制限はなく、状況に応じて適宜選定されるが、通常は、１〜５０重量％の範囲である。好ましくは３〜４０重量％の範囲で用いられる。この量が１重量％未満では配線材料が腐蝕されやすく、また５０重量％を越えると堆積ポリマーの除去速度が遅くなる傾向が見られる。
このようにして得られた本発明の半導体素子製造用洗浄液は、半導体素子製造工程において、ドライエッチング処理の際に生じる堆積ポリマーを、ＳＯＧ膜及び金属膜を腐蝕することなく、容易に除去することができる。
【０００９】
次に本発明の洗浄液を用いる洗浄処理方法を説明する。
本発明の洗浄液は、平坦化絶縁膜層（ＳＯＧ膜）を有する半導体素子のドライエッチング処理の際に生じる堆積ポリマーを、ＳＯＧ膜や金属膜を、腐食すること無く除去するのに特に好適に用いられる。洗浄温度および洗浄時間は、堆積ポリマーの状態や配線材料の種類などに応じて適宜選択されるが、洗浄温度は通常１０〜３０℃程度で充分であり、また堆積ポリマーの除去速度が遅過ぎる場合は、６０℃程度まで昇温して洗浄処理を行っても良い。洗浄時間は、通常１〜３０分間程度である。また、洗浄方法としては、例えばバッチ式による浸漬洗浄、枚葉式によるスプレイ又は噴霧洗浄等を使用することができる。この洗浄処理方法を使用して、半導体素子を製造することができる。
【００１０】
【実施例】
次に、本発明を実施例によりさらに詳しく説明するが、本発明はこれらの例によってなんら限定されるものではない。
【００１１】
実施例１
図１に示したプラズマ処理によって堆積ポリマーが付着された状態の半導体素子を、フッ化アンモニウム１重量％、ホウ酸０．３重量％、ジメチルホルムアミド６９重量％及び水２９．７重量％からなる洗浄液を用い、２３℃にて１０分間洗浄処理を実施したのち、水洗後、乾燥した。この状態を図２に示した。
図２から本発明の洗浄液を用いることにより、パターン形成の為に実施したプラズマ処理によって生成した堆積ポリマーが完全に除去、清浄化され、更には、ＳＯＧ膜および金属膜は何ら腐蝕していないことが分かる。
表１に洗浄液組成を示した。洗浄処理を２３℃で１０分間行った後、水洗乾燥し、堆積ポリマーの除去性、ＳＯＧ膜及び金属膜の腐蝕抑制能については下記の判断基準に従って評価した。この結果を表３に示した。
◎：堆積ポリマーが完全に除去され、ＳＯＧ膜および金属膜の腐蝕が完全に抑制されている。
○：堆積ポリマーの残存がわずかに認められ、ＳＯＧ膜及び金属膜の腐蝕がわずかに認められる。
×：堆積ポリマーの残存が認められ、ＳＯＧ及び金属膜の腐蝕が認められる。
【００１２】
実施例２〜８
実施例１で用いた図１の半導体素子に対し、表１に示す組成の洗浄液を用いて、実施例１と同じ条件で洗浄処理を施したのち、水洗後乾燥し、堆積ポリマーの除去性、ＳＯＧ膜及び金属膜の腐食抑制能について実施例１と同じ基準に従って評価した。結果を表３に示す。
【００１３】
比較例１〜５
実施例１で用いた図１の半導体素子に対し、表２に示す組成の洗浄液を用いて、実施例１と同じ条件で洗浄処理を施したのち、水洗後乾燥し、堆積ポリマーの除去性、ＳＯＧ膜及び金属膜の腐食抑制能について実施例１と同じ基準に従って評価した。結果を表３に示す。
【００１４】
【表１】
【表２】
【表３】
【発明の効果】
本発明の半導体素子製造用洗浄液は、半導体素子の製造工程において、ドライエッチング処理の際に生じる堆積ポリマーの除去、特にヴィアホール内部及びその周辺に生成付着した堆積ポリマーの除去をＳＯＧ膜や金属膜を腐蝕することなく容易に行うことができる。これにより清浄な配線形成を達成でき、高品質の信頼度の高い半導体素子が得られる。
【図面の簡単な説明】
【図１】実施例１〜４及び比較例１〜２の洗浄処理前の半導体素子の断面図。
【図２】実施例１〜４の洗浄処理後の半導体素子の断面図。
【符号の説明】
１シリコン基板
２酸化ケイ素膜
３下層Ａｌ配線
４酸化ケイ素膜
５スピンオンガラス（ＳＯＧ）
６酸化ケイ素膜
７堆積ポリマー[0001]
BACKGROUND OF THE INVENTION
In the present invention, for example, in the manufacturing process of a semiconductor element using silicon, removal of a deposited polymer generated during dry etching processing is performed, that is, 1) In particular, an insulating film layer (also referred to as an interlayer insulating film) is formed. Via holes (connection holes formed in the insulating film for connecting the metal conductive film layer formed for wiring under the insulating film and the metal conductive film layer formed on the insulating film) and the inside thereof Removal of deposited polymer generated and adhered to the periphery, or 2) Upon removal of deposited polymer generated and adhered to the side wall after forming a metal conductive film layer, these deposited polymers are preferably removed and simultaneously introduced into the semiconductor element. The present invention relates to a cleaning liquid that has extremely low corrosiveness to laminated flattening insulating films (SOG films) and metal films.
[0002]
[Prior art]
In recent years, in order to achieve higher integration and higher speed of LSI elements, those having a multilayer wiring structure are increasing. As wiring becomes multi-layered, a steep step is formed, and it becomes difficult to form an upper layer wiring thereon. However, the problem is solved by flattening the interlayer insulating film between the lower layer wiring and the upper layer wiring. . The planarizing insulating film is formed by a method of spin-coating a spin coating agent made of, for example, silanol and subsequently vitrifying the spin coating agent by heat treatment, that is, a spin-on glass (SOG) method.
Next, a circuit pattern is formed on the multilayer film, and a dry etching method is mainly used as the forming method. In this dry etching process, a deposited polymer due to a dry etching gas, a resist, a film to be processed, and the like is generated around the formed pattern. If this deposited polymer is left as it is, it causes an increase in resistance or causes an electrical short circuit, leading to an undesirable situation. For this reason, the conventional removal of the deposited polymer has been achieved by washing with hydrofluoric acid or a treatment liquid containing hydrofluoric acid and ammonium fluoride. However, this conventional processing method using a fluorine compound corrodes the SOG film, which is a planarization insulating film, and causes problems such as delamination.
[0003]
[Problems to be solved by the invention]
Under such circumstances, the present invention eliminates the deposited polymer generated during the dry etching process in the manufacturing process of the semiconductor element, in particular, the deposited polymer or the metal conductive film layer generated and adhered inside and around the via hole. An object of the present invention is to provide a cleaning solution for manufacturing a semiconductor device that can easily remove a deposited polymer formed and adhered to a side wall portion after wiring formation and that does not corrode an SOG film and a metal film. is there.
[0004]
[Means for Solving the Problems]
As a result of intensive research to achieve the above object, the present inventors use an aqueous solution containing boric acid or a boric acid ester , a fluorine-containing compound, and a water-soluble or water-miscible organic solvent as a cleaning liquid. Thus, it has been found that the polymer deposited during the dry etching process can be easily removed without corroding the SOG film and the metal film. The present invention has been completed based on such findings. That is, the present invention
A cleaning liquid for manufacturing a semiconductor device comprising an aqueous solution containing (A) boric acid or boric acid ester or phosphoric acid, (B) a fluorine-containing compound, and (C) a water-soluble or water-miscible organic solvent, and this cleaning liquid A method of manufacturing a semiconductor device by using and removing a deposited polymer is provided.
[0005]
DETAILED DESCRIPTION OF THE INVENTION
The boric acid used as the component (A) is an oxygen acid produced by hydration of diboron trioxide, and examples thereof include orthoboric acid, metaboric acid, and tetraboric acid. Moreover, boric acid ester is a compound represented by following formula (1).
B (OR) m (OH) 3-m (1)
(In the formula, m represents an integer of 1 to 3. R represents a hydrocarbon group having 1 to 18 carbon atoms, for example, a saturated or unsaturated aliphatic group, a saturated or unsaturated aromatic group, Examples of the saturated or unsaturated aliphatic group include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, and an octyl group. Group, nonyl group, decyl group, undecyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, vinyl group, allyl group, propenyl group, butenyl group and the like. Examples of the saturated or unsaturated aromatic group include phenyl group, toluyl group, mesityl group, cumenyl group, benzyl group, and phenethyl group. Further, when m = 2 or 3, the hydrocarbon groups may be the same or different.
Each of the above boric acid and boric acid ester may be used alone, or two or more of these may be used in combination. The content of the component (A) is not particularly limited and is appropriately selected depending on the situation, but is usually in the range of 0.0005 to 10% by weight, preferably 0.001 to 4% by weight, and more preferably Is used in the range of 0.01 to 1% by weight. If this amount is less than 0.0005% by weight, the SOG film tends to be corroded, and if it exceeds 10% by weight, the removal rate of the deposited polymer tends to be slow.
[0006]
Next, examples of the fluorine-containing compound used as the component (B) include the following compounds (a) and (b).
(A) Inorganic fluorine compounds such as hydrofluoric acid, ammonium fluoride, ammonium hydrogen fluoride, boron trifluoride, and antimony trifluoride.
(B) A fluorine-containing aliphatic compound represented by the following formula (2).
In the cleaning liquid of the present invention, the fluorine-containing compound of component (B) may be used alone or in combination of two or more. The content is not particularly limited and is appropriately selected depending on the situation, but is usually in the range of 0.1 to 15% by weight. Preferably it is used in the range of 0.5 to 10% by weight. If the amount is less than 0.1% by weight, the removal rate of the deposited polymer is slow, which is not preferable. If the amount exceeds 15% by weight, the wiring material tends to be easily corroded.
[0007]
In the cleaning liquid of the present invention, a water-soluble or water-miscible organic solvent is used as the component (C). Examples of such organic solvents include formamide; N-methylformamide; N, N-dimethylformamide; N, N-dimethylacetamide; amides such as N-methylpyrrolidone; lactones such as γ-butyrolactone; methanol, ethanol. , Alcohols such as isopropanol, ethylene glycol, esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, glycol ethers such as ethylene glycol monobutyl ether, diethylene glycol monomethyl ether and diethylene glycol monoethyl ether, and And sulfur compounds such as dimethyl sulfoxide and sulfolane.
The organic solvent of component (C) may be used alone or in combination of two or more. The content thereof is not particularly limited and is appropriately selected depending on the situation, but is usually in the range of 1 to 80% by weight. Preferably it is used in the range of 5 to 80% by weight, more preferably in the range of 15 to 80% by weight. If this amount is less than 1% by weight, the wiring material is likely to be corroded, and the viscosity of the cleaning liquid is increased, which may deteriorate the workability. On the other hand, if it exceeds 80% by weight, the removal rate of the deposited polymer tends to be slow.
[0008]
Further, a quaternary ammonium salt can be added to the cleaning liquid of the present invention. Examples of the quaternary ammonium salt include tetramethylammonium hydrogen carbonate, tetramethylammonium carbonate, tetramethylammonium formate, tetramethylammonium acetate, tetramethylammonium propionate, tetramethylammonium butyrate, tetramethylammonium Oxalate, tetramethylammonium malonate, tetramethylammonium maleate, tetramethylammonium fumarate, tetramethylammonium citrate, tetramethylammonium benzoate, tetramethylammonium toluate, tetramethylammonium phthalate Acid salt, tetramethylammonium acrylate, trimethyl (2-hydroxyethyl) ammonium hydrogen carbonate, trimethyl (2-hydroxyethyl) Ammonium carbonate, trimethyl (2-hydroxyethyl) ammonium formate, trimethyl (2-hydroxyethyl) ammonium acetate, trimethyl (2-hydroxyethyl) ammonium benzoate, trimethyl (2-hydroxyethyl) ammonium phthalate, Tetraethylammonium bicarbonate, tetraethylammonium carbonate, tetraethylammonium formate, tetraethylammonium acetate, tetrapropylammonium formate, tetrapropylammonium acetate, tetrabutylammonium formate, tetrabutylammonium acetate, tetramethylammonium boric acid Salt, tetramethylammonium phosphate, tetramethylammonium sulfate, trimethyl (2-hydroxyethyl) ammonium borate, Methyl (2-hydroxyethyl) ammonium phosphate, etc. trimethyl (2-hydroxyethyl) ammonium sulfate and the like.
Said quaternary ammonium salt may be used independently and may be used in combination of 2 or more type. Moreover, there is no restriction | limiting in particular, Although the content is suitably selected according to a condition, Usually, it is the range of 1 to 50 weight%. Preferably it is used in the range of 3 to 40% by weight. If this amount is less than 1% by weight, the wiring material is easily corroded, and if it exceeds 50% by weight, the removal rate of the deposited polymer tends to be slow.
The thus obtained cleaning solution for manufacturing a semiconductor device of the present invention can easily remove the polymer deposited during the dry etching process in the semiconductor device manufacturing process without corroding the SOG film and the metal film. Can do.
[0009]
Next, a cleaning method using the cleaning liquid of the present invention will be described.
The cleaning liquid of the present invention is particularly suitably used for removing deposited polymer generated during dry etching of a semiconductor element having a planarization insulating film layer (SOG film) without corroding the SOG film or the metal film. It is done. The cleaning temperature and cleaning time are appropriately selected according to the state of the deposited polymer and the type of wiring material, but a cleaning temperature of about 10 to 30 ° C is usually sufficient and the removal rate of the deposited polymer is too slow. May be heated to about 60 ° C. for cleaning treatment. The washing time is usually about 1 to 30 minutes. In addition, as a cleaning method, for example, batch type immersion cleaning, single wafer type spraying, spray cleaning, or the like can be used. Using this cleaning method, a semiconductor element can be manufactured.
[0010]
【Example】
EXAMPLES Next, although an Example demonstrates this invention further in detail, this invention is not limited at all by these examples.
[0011]
Example 1
The semiconductor device to which the deposited polymer is attached by the plasma treatment shown in FIG. 1 is a cleaning solution comprising 1% by weight of ammonium fluoride, 0.3% by weight of boric acid, 69% by weight of dimethylformamide, and 29.7% by weight of water. After washing for 10 minutes at 23 ° C., the substrate was washed with water and dried. This state is shown in FIG.
From FIG. 2, by using the cleaning liquid of the present invention, the deposited polymer generated by the plasma processing performed for pattern formation is completely removed and cleaned, and the SOG film and the metal film are not corroded at all. I understand.
Table 1 shows the cleaning solution composition. The cleaning treatment was carried out at 23 ° C. for 10 minutes, followed by washing with water and drying, and the removal property of the deposited polymer and the corrosion inhibiting ability of the SOG film and the metal film were evaluated according to the following criteria. The results are shown in Table 3.
A: The deposited polymer is completely removed, and the corrosion of the SOG film and the metal film is completely suppressed.
○: Slightly remaining of the deposited polymer is observed, and slightly corrosion of the SOG film and the metal film is observed.
X: Remaining deposited polymer is observed, and corrosion of SOG and metal film is observed.
[0012]
Examples 2-8
The semiconductor device of FIG. 1 used in Example 1 was washed using the cleaning liquid having the composition shown in Table 1 under the same conditions as in Example 1, then washed with water and dried to remove the deposited polymer. The corrosion inhibiting ability of the SOG film and metal film was evaluated according to the same standard as in Example 1. The results are shown in Table 3.
[0013]
Comparative Examples 1-5
The semiconductor device of FIG. 1 used in Example 1 was washed using the cleaning liquid having the composition shown in Table 2 under the same conditions as in Example 1, then washed with water and dried to remove the deposited polymer. The corrosion inhibiting ability of the SOG film and metal film was evaluated according to the same standard as in Example 1. The results are shown in Table 3.
[0014]
[Table 1]
[Table 2]
[Table 3]
【The invention's effect】
The cleaning liquid for manufacturing a semiconductor device according to the present invention removes the deposited polymer generated during the dry etching process in the manufacturing process of the semiconductor device, in particular, removes the deposited polymer generated and adhered inside and around the via hole. Can be easily performed without corrosion. Thereby, clean wiring formation can be achieved, and a high-quality and highly reliable semiconductor element can be obtained.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a semiconductor element before cleaning treatment in Examples 1 to 4 and Comparative Examples 1 and 2. FIG.
FIG. 2 is a cross-sectional view of a semiconductor element after a cleaning process in Examples 1 to 4.
[Explanation of symbols]
1 silicon substrate 2
6
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22641097A JP3975301B2 (en) | 1997-08-22 | 1997-08-22 | Semiconductor device cleaning liquid and method for manufacturing semiconductor device using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22641097A JP3975301B2 (en) | 1997-08-22 | 1997-08-22 | Semiconductor device cleaning liquid and method for manufacturing semiconductor device using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1167703A JPH1167703A (en) | 1999-03-09 |
| JP3975301B2 true JP3975301B2 (en) | 2007-09-12 |
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| JP22641097A Expired - Lifetime JP3975301B2 (en) | 1997-08-22 | 1997-08-22 | Semiconductor device cleaning liquid and method for manufacturing semiconductor device using the same |
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| US7754668B2 (en) * | 2005-05-06 | 2010-07-13 | Mallinckrodt Baker. Inc | Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist |
| JP4642001B2 (en) | 2006-10-24 | 2011-03-02 | 関東化学株式会社 | Composition for removing photoresist residue and polymer residue |
| US8021490B2 (en) | 2007-01-04 | 2011-09-20 | Eastman Chemical Company | Substrate cleaning processes through the use of solvents and systems |
| JP2012058273A (en) | 2010-09-03 | 2012-03-22 | Kanto Chem Co Inc | Photoresist residue and polymer residue removing liquid composition |
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