JP3973223B2 - Active substrate, display device and manufacturing method thereof - Google Patents

Description

  The present invention provides a liquid crystal display device capable of displaying a desired display image on a display screen by applying a drive signal to each of a plurality of display picture element electrodes arranged two-dimensionally via each switching element. The present invention relates to a display device such as the above, a manufacturing method thereof, and an active substrate used in the display device.

  Conventionally, as this type of display device, there are an EL display device and a plasma display device in addition to a liquid crystal display device. For example, by selectively driving a plurality of picture element portions arranged in a matrix, display A desired display pattern (image) can be displayed on the screen for high density display.

  As an element selection method, there is known an active drive system in which individual pixel electrodes are arranged in a matrix in the vertical and horizontal directions, and a switching element is connected to each of the pixel electrodes for selective driving. It has been. As switching elements for selectively driving a plurality of picture element electrodes, TFT (thin film transistor) elements, MIM (metal-insulating film-metal) elements, MOS transistor elements, diodes and the like are generally used. By selectively driving the pixel electrodes by these switching elements, various display media such as a liquid crystal, an EL light emitting layer, or a plasma light emitter interposed between the pixel electrode and the counter electrode opposed thereto are optically used. When it is driven, it is visually recognized as a display pattern. Such an active drive system is capable of high-contrast display and has been put to practical use in liquid crystal televisions, computer terminal display devices, and the like.

  FIG. 15A is a plan view showing a configuration example of a basic unit in one active matrix substrate of a pair of substrates opposed to each other with a liquid crystal layer interposed therebetween in a conventional active liquid crystal display device. 15B is a cross-sectional view taken along the line XX ′ in FIG. 15A, and FIG. 15C is a cross-sectional view taken along the line YY ′ in FIG.

  15A to 15C, a conventional active liquid crystal display device includes, as a pair of substrates, an active matrix substrate 100 and a counter substrate that are disposed to face each other with a liquid crystal layer as a display medium interposed therebetween. Have. In the active matrix substrate 100, a plurality of gate bus lines 1 (scanning wirings) are wired in parallel at predetermined intervals in the horizontal direction on a glass substrate 10, and a plurality of sources are arranged in a vertical direction orthogonal (or crossed) to the gate matrix. The bus lines 2 (signal wiring) are wired in parallel at predetermined intervals, and both are arranged in a lattice shape (matrix shape). In addition, each pixel electrode 3 (portion surrounded by a dotted line) made of a transparent electrode is formed in a matrix form for each region surrounded by the adjacent gate bus line 1 and source bus line 2 (or for each intersection of both wirings). Are provided respectively.

  As shown in FIG. 15A, a dual gate TFT 4 functioning as a switching element is formed in a portion protruding from the gate bus line 1. As shown in the X-X ′ line cross-sectional view of FIG. 15B, the TFT 4 is provided with a semiconductor layer made of silicon (Si) on a glass substrate 10 with a base coat film 11 interposed therebetween. This semiconductor layer has an LDD region (for example, n−) doped with a low concentration between the channel region 12a and a source / drain region (for example, an n + Si layer) 12c doped with a high concentration of impurities on both sides thereof. Si layer) 12b is provided. On the channel region 12a, a gate electrode 1a protruding (branched) from the gate bus line 1 through the gate insulating film 13 is provided. The picture element electrode 3 is provided through the interlayer film 14 and the resin layer 15 so as to cover it. Although not shown here, an alignment film (PI) is provided on the pixel electrode 3, and a liquid crystal layer is provided in contact with the alignment film (PI).

  Further, as shown in FIG. 15A, an additional capacitance bus line (additional capacitance wiring) 5 made of a metal layer (gate metal) patterned in the same process as the gate bus line 1 is gated in parallel with the gate bus line 1. Each bus line 1 is arranged. As shown in the cross-sectional view along line YY ′ of FIG. 15C, the laminated structure of the additional capacitance portion is formed on the lower layer of the wide portion 5A of the additional capacitance bus line 5 with the gate insulating film 13 interposed therebetween. A semiconductor layer (extending portion 12) extending from the drain region 12c is overlaid. The extended portion 12 of the semiconductor layer is a metal layer (source metal) 6 patterned in the same process as the source bus line 2 in the contact hole portion 6A provided in the gate insulating film 13, the interlayer film 14, and the resin layer 15. Is connected to the pixel electrode 3 via. As a result, the extension portion 12 is disposed so that one additional capacitance electrode and the wide portion 5A (the other additional capacitance electrode) of the additional capacitance bus line 5 through the gate insulating film 13 are opposed to each other. An additional capacity is formed between the wide area portion 12 and the wide portion 5A.

  In the conventional active liquid crystal display device thus configured, for example, when the TFT 4 as a switching element is formed as a defective element, a signal voltage to be originally applied to the pixel electrode 3 connected to the defective element. Is not entered. For this reason, it is recognized by the user as a point-like picture element defect (hereinafter referred to as a point defect) on the display screen. Such a point defect significantly impairs the display quality of the liquid crystal display device, and is a major problem in terms of manufacturing yield.

  The main causes of such pixel defects are roughly classified into the following two types.

  First of all, due to defects in the TFT 4 and the like, the pixel electrode 3 is sufficiently removed by the image signal from the source bus line 2 within the time when the TFT 4 is selected by the scanning signal (signal from the gate bus line 1). The other is a failure that occurs because the pixel electrode 3 cannot be charged (hereinafter referred to as ON failure), and the other is a failure in which the charge charged in the pixel electrode 3 leaks when the TFT 4 is not selected due to a defect in the TFT 4 (hereinafter referred to as “ON failure”). It is called OFF failure).

  Among these, the ON failure (ON failure) is caused by the failure of the TFT 4 as the switching element, but the OFF failure (OFF failure) occurs when the electric leakage occurs through the TFT 4 as the switching element, There are two types of cases where electrical leakage occurs between the bus lines 1 and 2. In both cases of ON failure and OFF failure, the voltage applied between the pixel electrode 3 and the counter electrode (not shown) does not reach the required display voltage value. For this reason, when a normally white mode (a display mode in which the light transmittance is maximized when the voltage applied to the liquid crystal layer is 0 V) is adopted, the defective pixel area appears as a bright spot, and normally black When the mode (display mode in which the transmittance is lowest at a voltage of 0 V) is adopted, a black spot appears.

  Such a point defect is caused by sticking the other counter substrate on which the counter electrode is formed to the one active matrix substrate 100 on which the TFT 4 as a switching element is formed, and sealing the liquid crystal between the two bus lines. By applying a predetermined electrical signal (inspection signal) to 1 and 2, the inspector can visually detect it. After that, for example, by short-circuiting the source bus line 2 and the pixel electrode 3, the charge of the pixel electrode 3 is reduced by the signal voltage from the source bus line 2 regardless of selection / non-selection of the gate bus line 1. Correction work for charging and discharging is required.

  However, in the conventional example of FIG. 15, such a correction is difficult due to the wiring structure of the source bus line 2 and the pixel electrode 3. As a result, a product with many point defects must be discarded, resulting in a problem that the manufacturing yield deteriorates and the manufacturing cost becomes expensive.

  A liquid crystal display device capable of correcting such a point defect is proposed in Patent Document 1. The liquid crystal display device of Patent Document 1 will be described with reference to FIGS. 16 (a) and 16 (b).

  FIG. 16A is a plan view showing a configuration example of a basic unit in one active matrix substrate of a pair of substrates opposed to each other with a liquid crystal layer interposed therebetween in a conventional active liquid crystal display device. 16 (b) is an enlarged view showing a portion surrounded by a circle in (a). Here, the same reference numerals are given to the members having the same operational effects as the constituent members of FIG.

  As shown in FIG. 16A, this active liquid crystal display device is provided with a gate bus line protruding portion 21 from the gate bus line 1 toward the pixel electrode 3 and from the source bus line 2 to the pixel electrode 3. A source bus line protruding portion 22 is provided toward the side, and the protruding portions 21 and 22 overlap each other with an insulating film interposed therebetween. Further, a conductor piece 23 is provided at the tip of the gate bus line protruding portion 21 with an insulating film interposed therebetween. The conductor piece 23 is electrically connected to the picture element electrode 3, but the gate bus line protrusion 21 and the picture element electrode 3 are not electrically connected by an insulating film. The source bus line protruding portion 22 and the gate bus line protruding portion 21 are also electrically disconnected by the insulating film.

  In the picture element portion in which the point defect is detected, the base portion of the gate bus line protruding portion 21 is irradiated with laser as shown by the dotted line portion A in FIG. 16B, and the gate bus line protruding portion 21 and the gate bus line 1 Are electrically separated (cut) into an insulating state. Next, in the dotted line portion B, the insulating film between the source bus line protruding portion 22 and the gate bus line protruding portion 21 is broken by laser irradiation, and the source bus line protruding portion 22 and the gate bus line protruding portion 21 are short-circuited. Let Further, in the dotted line portion C, the insulating film between the gate bus line protruding portion 21 and the conductor piece 23 connected to the pixel electrode 3 is broken by laser irradiation, and the gate bus line protruding portion 21 and the conductor piece are broken. 23 is short-circuited. By this three times of laser irradiation, the source bus line 2 and the picture element electrode 3 are electrically connected, and the defective picture element is turned on at an average brightness of all picture elements, and the point defect is eliminated.

  Further, Patent Document 2 proposes a liquid crystal display device capable of repairing defective picture elements generated due to defects such as pinholes generated in the additional capacitor electrode 5B. The active liquid crystal display device disclosed in Patent Document 2 will be described with reference to FIG.

  FIG. 17 is a plan view showing a configuration example of a basic unit in one active matrix substrate of a pair of substrates opposed to each other with a liquid crystal layer interposed therebetween in another conventional active liquid crystal display device. Here, the same reference numerals are given to the members having the same operational effects as the constituent members of FIG.

  In FIG. 17, this active liquid crystal display device has an additional capacitor bus line 5 provided in parallel to the gate bus line 1 in a portion adjacent to the pixel electrode 3, and a portion of the additional capacitor bus line 5 facing the TFT 4 formation portion. One end of the first conductor 25 is overlapped with an insulating film. One end portion of the second conductor 26 is superimposed on the lower end side of the first conductor 25 with a gate insulating film interposed therebetween. The other end portion of the second conductor 26 is overlapped with the end portion of the protruding portion 27 of the source bus line 2 via the gate insulating film on the upper layer side, and the pixel electrode 3 and the additional capacitor bus line 5 are overlapped with each other. The additional capacitor electrode 5 </ b> B in the shaded portion facing each other is connected on the upper layer side of the first conductor 25.

With respect to the base of the first conductor 25, the overlapping portion of the first conductor 25 and the second conductor 26, and the overlapping portion of the second conductor 26 and the protruding portion 27 of the source bus line 2 Then, the laser beam is irradiated through the glass substrate, the source bus line 2 and the pixel electrode 3 are short-circuited, and the defective pixel is repaired by separating the additional capacitor electrode 5B from the pixel electrode 3. it can.
Japanese Patent Laid-Open No. 4-265934 JP-A-4-278927

  However, in the active liquid crystal display device of Patent Document 1, the gate bus line protruding portion 21 and the gate bus are short-circuited between the source bus line 2 and the pixel electrode 3 when the defective pixel portion is corrected by the defective TFT. Laser irradiation for electrically separating the line 1 (dotted line portion A), laser irradiation for short-circuiting the gate bus line protruding portion 21 and the source bus line protruding portion 22 (dotted line portion B), and a gate bus line Three laser irradiation steps are required, such as laser irradiation (dotted line portion C) for short-circuiting the protruding portion 21 and the pixel electrode 3. For this reason, it is not easy to correct the defective picture element portion by the defective TFT. In this case, since the defective TFT is not separated from the picture element electrode 3, it cannot be repaired according to the type of picture element defect.

  In the active liquid crystal display device of Patent Document 2, the source bus line 2 and the pixel electrode 3 are short-circuited in two laser irradiation processes when the defective pixel portion is corrected due to the defect of the additional capacitance electrode 5B. The additional capacitance electrode 5B is separated from the picture element electrode 3 in one laser irradiation step. Thus, although the additional capacitance electrode 5B is separated from the pixel electrode 3, it is not easy to correct the defective pixel portion by a defective additional capacitance portion or the like.

  The present invention solves the above-mentioned conventional problems, and an active substrate capable of facilitating repair according to the type of pixel defect so that the defective pixel is more difficult to visually recognize and improving the manufacturing yield thereof. It is an object of the present invention to provide a display device used and a manufacturing method thereof.

In the active substrate of the present invention, a plurality of picture element portions each having a switching element in which a signal wiring is connected to one driving region and a picture element electrode connected to the other driving region of the switching element are arranged two-dimensionally. In the active substrate, by applying energy, the other driving region cutting part that enables the semiconductor layer constituting the other driving region of the switching element to be separated from the pixel electrode and the semiconductor layer constituting the other driving region of the switching element At least one of additional capacitance cutting portions that can separate the connected additional capacitance portion from the pixel electrode, a first layer made of a conductive material layer or a semiconductor layer connected to the pixel electrode, and the signal a connecting metal layer wiring, insulation between the second layer of the same metal layer as the connected scan lines in control region of the switching element Across the membrane, which has a short-circuit portion is partially overlapped so as to be short-circuited by the application of energy, the objects can be achieved. The active substrate according to the present invention has a two-dimensional array of picture element portions each having a switching element in which signal wiring is connected to one drive region and a picture element electrode connected to the other drive region of the switching element. In the active substrate thus formed, by applying energy, the other drive region cutting part that can separate the semiconductor layer constituting the other drive region of the switching element from the pixel electrode and the semiconductor constituting the other drive region of the switching element At least one of additional capacitance cutting portions that allow the additional capacitance portion connected to the layer to be separated from the pixel electrode, a first layer made of a conductive material layer or a semiconductor layer connected to the pixel electrode, and Can be short-circuited by applying energy by interposing an insulating film between the conductive material layer or the second layer made of a semiconductor layer connected to the signal wiring. Sea urchin and a partially superimposed shorted portions, at least one of the first layer and the second layer are those that are made from the semiconductor silicon layer, the object is achieved.

In the active substrate of the present invention, a plurality of picture element portions each having a switching element in which a signal wiring is connected to one driving region and a picture element electrode connected to the other driving region of the switching element are arranged two-dimensionally. In the active substrate, by applying energy, the other driving region cutting part that enables the semiconductor layer constituting the other driving region of the switching element to be separated from the pixel electrode and the semiconductor layer constituting the other driving region of the switching element At least one of the additional capacitor cutting portions that can separate the connected additional capacitor portion from the pixel electrode, the semiconductor layer constituting the other drive region of the switching element, or the conductive material layer connected to the semiconductor layer a first layer consisting of a metal layer connected to the signal wiring, run connected to the control region of the switching element Second layer and is across the insulating film between made of the same metal layer as the wiring, which has a short-circuit portion is partially overlapped so as to be short-circuited by the application of energy, said object is achieved by the . The active substrate according to the present invention has a two-dimensional array of picture element portions each having a switching element in which signal wiring is connected to one drive region and a picture element electrode connected to the other drive region of the switching element. In the active substrate thus formed, by applying energy, the other drive region cutting part that can separate the semiconductor layer constituting the other drive region of the switching element from the pixel electrode and the semiconductor constituting the other drive region of the switching element At least one of additional capacitance cutting portions that can separate the additional capacitance portion connected to the layer from the pixel electrode, and the semiconductor layer constituting the other drive region of the switching element or the conductivity connected to the semiconductor layer The first layer made of the material layer is insulated from the second layer made of the conductive material layer or the semiconductor layer connected to the signal wiring. A short-circuit portion partially overlapped so as to be short-circuited by applying energy, and at least one of the first layer and the second layer is made of a semiconductor silicon layer, and This achieves the above object.

  Preferably, in the active substrate of the present invention, a plurality of scanning wirings are provided in parallel, and a plurality of the signal wirings are provided in parallel so as to cross the plurality of scanning wirings. Elementary electrodes are respectively arranged in a matrix, and the scanning wiring is connected to the control region of the switching element.

Further, preferably, in the active substrate of the present invention, the extending portion is connected to the pixel electrode via a contact hall formed by extending the semiconductor layer constituting the other driving region of the switching element.

Further preferably, in the active substrate of the present invention, an extended portion obtained by extending a semiconductor layer constituting the other drive region of the switching element is connected to the conductive material layer through the first contact hole portion, and the conductive material The layer is connected to the pixel electrode through a second contact hole.

  Further preferably, in the active substrate of the present invention, an additional capacitance wiring is provided in parallel with the scanning wiring for each scanning wiring, and at least a part of the extended portion sandwiches the wide portion of the additional capacitance wiring and the insulating film. Are arranged opposite each other.

More preferably, the first layer in the active substrate of the present invention is a first projecting portion projecting from the extending portion, and the second layer is connected to the signal wiring through a third contact hole portion. And a second protruding portion protruding from the signal wiring so as to partially overlap the first protruding portion side.

Further preferably, the first protrusion in the active substrate of the present invention is a conductive material layer in which the extending portion is connected via the first contact hole portion.

  Further preferably, the insulating film in the active substrate of the present invention is made of the same material as the gate insulating film of the switching element.

  Further preferably, the first layer in the active substrate of the present invention is made of the same metal layer as the signal wiring, and the second layer is made of the same metal layer as the scanning wiring.

  Furthermore, preferably, the first protrusion and the second protrusion in the active substrate of the present invention protrude from each other by a predetermined amount from the overlapping portion.

  Further preferably, the switching element in the active substrate of the present invention is any one of a thin film transistor element, an MIM element, a MOS transistor element, and a diode.

  Further preferably, the thin film transistor element in the active substrate of the present invention is a polycrystalline silicon thin film transistor using a polycrystalline silicon layer as the semiconductor layer.

  Further preferably, the thin film transistor element in the active substrate of the present invention has a top gate structure in which a control region is provided on the upper side of the channel layer connected to the semiconductor layer via the insulating layer.

  Further preferably, the thin film transistor element in the active substrate of the present invention has a bottom gate structure in which a control region is provided on the lower layer side of a channel layer connected to the semiconductor layer via the insulating layer.

  Further preferably, in the active substrate of the present invention, a part or all of the switching element is provided on the lower side of the signal wiring in plan view, and the scanning wiring portion intersecting with the signal wiring is defined as a gate region of the switching element. Also used as.

  Further preferably, a part of the switching element in the active substrate of the present invention is provided on the lower side of the signal wiring in the plan view lower layer side, and the remaining part is provided on the lower side of the picture element electrode in the plan view lower side. It is configured in a letter shape.

  Further, preferably, at least one of the first layer and the second layer in the active substrate of the present invention is any one of Ta, W, Ti, Mo, Al, and Cu, a metal material of these metal elements. It consists of an alloy material or a compound material containing at least one kind as a main component.

  Further preferably, at least one of the connection between the first layer and the pixel electrode and the connection between the second layer and the signal wiring in the active substrate of the present invention is connected via a contact hole portion.

  Further preferably, the pixel electrode in the active substrate of the present invention is made of a transparent conductive film, and at least one of the first layer and the second layer below or above a slit provided in the pixel electrode. Part of the layer is arranged.

  Further preferably, any of the layers and the slits in the active substrate of the present invention are both linear, and the distance between the center line of any of the layers and the center line of the slit is in the range of 0 μm or more and 3 μm or less. is there.

  Further, preferably, the center line of the slit in the active substrate of the present invention coincides with the center line of any one of the layers.

  Further preferably, the pixel electrode in the active substrate of the present invention is composed of a plurality of electrodes having different potentials, and the first layer and the second layer are disposed below or above at least one of the plurality of electrodes. A part of at least one of the layers is disposed.

  Further preferably, any layer and one electrode in the active substrate of the present invention are both linear, and the distance between the center line of the one electrode and the center line of the one layer is 0 μm or more and 3 μm or less. Is within the range.

  Furthermore, preferably, the center line of one electrode in the active substrate of the present invention coincides with the center line of any one of the layers.

  A display device of the present invention is disposed opposite to an active substrate according to any one of claims 1 to 28 and the active substrate with a display medium sandwiched between the active substrate and a plurality of picture elements of the active substrate. And a counter substrate provided with a counter electrode facing the electrode, and the display medium is driven by a display signal applied between the pixel electrode and the counter electrode to enable screen display. This achieves the above object.

  Preferably, in the display device of the present invention, when at least one of the plurality of picture element parts is a defective picture element part, the insulating film between the first layer and the second layer of the defective picture element part is irradiated with energy. It is destroyed and the first layer and the second layer are short-circuited.

  Further preferably, the display medium in the display device of the present invention is any one of a liquid crystal, an EL light emitting layer, and a plasma light emitter.

  A method for manufacturing a display device according to the present invention is such that a predetermined signal is applied from the scanning wiring and the signal wiring between the pixel electrode and the counter electrode of the display device according to any one of claims 29 to 31. A defect detection step for detecting a point defect in the portion, and the defect pixel portion in which the point defect is detected is irradiated with energy from the outside of the substrate to destroy the insulating film between the first layer and the second layer Then, energy is applied from the outside of the substrate to at least one of the short-circuiting step of short-circuiting the first layer and the second layer, the other drive region cutting part and the additional capacity cutting part of the switching element, and the other The semiconductor layer constituting the driving region and a cutting step for separating at least one of the pixel electrode and the additional capacitor portion are included, whereby the above object is achieved.

  Preferably, in the short-circuiting step in the method for manufacturing a display device of the present invention, both protrusions further protrude from each other from the overlapping portion of the first protrusion of the first layer and the second protrusion of the second layer. Energy irradiation is performed on the portion and the corner including the overlapping portion.

  Further preferably, laser light is used as energy in the method for manufacturing a display device of the present invention.

  Further preferably, in the display device manufacturing method of the present invention, a scanning signal driving circuit capable of outputting a scanning signal to the scanning wiring and a signal wiring driving circuit capable of outputting a display signal to the signal wiring are configured. Each switching element and each switching element for driving the pixel portion provided for each pixel electrode are formed in the same process using the same material.

  The operation of the present invention will be described below with the above configuration.

  In the present invention, one of the pair of substrates opposed to each other with the display medium interposed therebetween is connected to the semiconductor layer constituting the other drive region (drain electrode) of the switching element or to this semiconductor layer A first layer (for example, a first protrusion) of a conductive material layer and a second layer (second protrusion) made of a conductive material layer or a semiconductor layer connected to a signal wiring (source bus line). At least a portion is overlapped with the insulating layer interposed therebetween. Alternatively, the first layer made of a conductive material layer or a semiconductor layer that is connected to the pixel electrode through the contact hole portion and is not connected to the switching element, and the conductive material connected to the signal wiring (source bus line). A material layer or a second layer made of a semiconductor layer is at least partially overlapped with an insulating film interposed therebetween. At the same time, an auxiliary capacitance cutting part for the pixel electrode and a drain electrode cutting part of the switching element are provided as cutting parts for repairing according to the type of the pixel defect.

  This active substrate and the counter substrate are bonded together, and a display medium such as a liquid crystal layer is provided between the two substrates, and then an appropriate drive signal is applied to the pixel electrode and the counter electrode via the gate bus line and the source bus line. Is given, a predetermined display pattern is displayed on the display screen. By observing the display screen, a person can visually find a point defect (defect picture element).

  In the picture element portion in which a point defect including a defect in the auxiliary capacitor is detected, the overlapping portion of the first layer and the second layer is irradiated with laser from the back side of the substrate, and laser irradiation is performed on the auxiliary capacitor cutting site. In addition, in the picture element portion in which a point defect is detected as a defect in the switching element, laser irradiation is performed on the overlapping portion of the first layer and the second layer, and laser irradiation is performed on the drain electrode cutting portion of the switching element. Further, in the pixel portion where the point defect is detected as a defect in the auxiliary capacitor and the switching element, the overlapping portion of the first layer and the second layer is irradiated with laser, and the drain electrode cut portion and the auxiliary capacitor of the switching element are irradiated. Laser irradiation is performed on the cutting site.

  As a result, the insulating film sandwiched between the first layer and the second layer is destroyed, the first layer and the second layer are short-circuited, and the other drive region or contact hole portion of the switching element is connected to the first layer. And the source bus line (signal wiring) connected to the second layer are electrically connected to each other. Furthermore, depending on the type of pixel defect, the auxiliary capacitor and the switching element are separated from the pixel electrode directly connected to the source bus line (signal wiring) by laser irradiation as a defective portion and repaired.

  In this manner, the source bus line (signal wiring) and the pixel electrode are short-circuited, and the source signal of the source bus line is input to the pixel electrode as it is. In addition, if the auxiliary capacitance cutting site is cut, a defect in the auxiliary capacitance does not affect the pixel electrode and the source bus line. Moreover, if the drain electrode cutting part of the switching element is cut, the malfunction due to the switching element does not affect the pixel electrode and the source bus line. This will result in a display state that is neither a perfect luminescent spot nor a black spot, and the picture element part that has undergone the above-mentioned repair process is not working normally, but is visually difficult to distinguish as a defective picture element. It becomes a state, and it can be called a normal picture element part on display.

  Therefore, in the prior art disclosed in Patent Documents 1 and 2, three or two laser irradiation steps are required to correct the pixel defect portion. However, according to the present invention, less laser irradiation is performed. In order to make it difficult to visually recognize defective picture elements without being adversely affected by defective parts in the process, repair according to the type of picture element defect is made easier and the manufacturing yield is improved.

  Also, when polycrystalline silicon is used as a semiconductor layer for a switching element, the off current is larger than that of amorphous silicon, so the switching element is usually composed of dual gates and triple gates, so there is a probability that the switching element will fail. Becomes higher. For this reason, if the drain electrode cutting part is provided in the switching element using polycrystalline silicon as the semiconductor layer, it is possible to prevent the pixel electrode and the source bus line from being affected even when the switching element malfunctions.

  According to the present invention as described above, when a point defect due to a defect in the auxiliary capacitor or the switching element is detected, the overlapped portion between the first layer and the second layer is irradiated with laser from the back side of the substrate, and there is a defect. In order to remove the adverse effects of laser irradiation on the auxiliary capacitor and the cutting area of the switching element, the number of pixel defects is selected so that the defective pixel is more difficult to see without being adversely affected by the defective area with fewer laser irradiation processes. The corresponding repair can be performed more easily, and the production yield can be improved.

  Hereinafter, a case where the first to fourth embodiments of the display device using the active substrate of the present invention are applied to an active liquid crystal display device using an active matrix substrate will be described with reference to the drawings.

(Embodiment 1)
FIG. 1A is a circuit diagram schematically showing a unit configuration example of an active matrix substrate in Embodiment 1 of the active liquid crystal display device of the present invention, and FIG. 1B is a switching element portion and a source in FIG. It is each sectional drawing of a bus line short circuit site | part. In addition, the same code | symbol is attached | subjected to the structural member which show | plays the effect similar to the structural member of Fig.15 (a) and FIG.15 (b).

  In FIG. 1A, an active matrix substrate 140 has a plurality of gate bus lines 1 parallel to each other and a plurality of source bus lines 2 parallel to each other orthogonally (or crossed) and wired in a lattice pattern, and an auxiliary capacitor The bus lines 5 are arranged in parallel with the gate bus lines 1 for each gate bus line 1. In addition, a pixel electrode 3 (or a pixel electrode 3) is provided for each region surrounded by both bus lines 1 and 2 (each intersection of both bus lines 1 and 2), One electrode of the auxiliary capacitor (in the first embodiment, the extended portion 12 of the semiconductor layer) is connected to the drain electrode D (the drain region 12c in the first embodiment) of the TFT 4 (dual gate configuration) as a switching element, The gate bus line 1 is connected to the gate electrode G (the gate region 1a in the first embodiment), and the source bus line 2 is connected to the source electrode S (the source region 12c in the first embodiment).

  Further, the conductive substance protrusion 12D (here, the same material as the source bus line 2) made of a conductive substance connected to the drain electrode D (the drain region 12c in the first embodiment) of the TFT 4 is used as the source bus line 2. It extends to near. A conductive material protrusion 7D is provided that overlaps with the insulating film (interlayer film 14) between the conductive material protrusion 12D as the first protrusion. The conductive substance protrusion 7D as the second protrusion is composed of a conductive substance (here, the same material as that for forming the gate bus line 1) connected to the source bus line 2 through the contact hole 2A. Has been. The overlapping portions of the conductive material protrusions 12D and the conductive material protrusions 7D will be described in detail later in the fourth embodiment, but the tip portions protrude from each other by a predetermined amount further than the overlapping portions. The overlapping portion is a portion that is short-circuited when the defective picture element is repaired. That is, in the case of a defective picture element, as shown by the dotted line of the conductive material protrusion 7D in FIG. 1B, by irradiating the corner including the both protrusions and the overlapping part with laser light of a predetermined power. The conductive material protrusion 7D and the conductive material protrusion 12D are short-circuited.

  As a laser irradiation position, a short-circuit portion 7E composed of overlapping portions of the conductive material protrusion 12D and the conductive material protrusion 7D, a drain cutting portion P of the TFT 4, and an auxiliary capacitance for cutting the auxiliary capacitance portion from the pixel electrode 3 A cutting site Q is provided. In the picture element portion where the point defect is detected as a defect in the auxiliary capacitance portion and the TFT 4, the overlapping portion of the conductive material protruding portion 12D and the conductive material protruding portion 7D is irradiated with laser, and the drain electrode cutting site P of the TFT 4 and Laser irradiation is performed on the auxiliary capacity cutting site Q. The state after laser irradiation to this laser irradiation part (enclosed by a dotted line) is shown in FIG. 2 (a) and FIG. 2 (b). Note that the cross-sectional positions in FIG. 2A are indicated by the numbers in the squares in FIG.

  Further, the planar configuration of the active matrix substrate 140 of FIG. 1A will be further described with reference to FIGS. 3A and 3B.

  FIG. 3A is a plan view showing a main configuration of the active matrix substrate 140 of FIG. 1A, and FIG. 3B is a partially enlarged view of FIG.

  As described above, in FIGS. 3A and 3B, the gate bus lines 1 and the source bus lines 2 are arranged in a grid pattern on one of the active matrix substrates 140 of the pair of insulating substrates. The auxiliary capacity bus line 5 is arranged in parallel to the gate bus line 1. In addition, the pixel electrode 3 is disposed in a region surrounded by both bus lines 1 and 2, and the pixel electrode 3 and the auxiliary capacitance electrode 12 (opposite the auxiliary capacitance electrode 5 A) are connected via the TFT 4 to the source bus line. 2 is connected.

  The TFT 4 is configured in an L shape in plan view, with one of the dual gates provided on the lower layer side of the source bus line 2 and the remaining one of the dual gates provided on the lower layer side of the pixel electrode 3. A crossing portion of the gate bus line 1 that crosses the source bus line 2 is also used as a gate region. The drain D side of the TFT 4 is connected to the conductive material protrusion 12D at the contact hole portion 4A, and the source S side of the TFT 4 is connected to the source bus line 2 at the contact hole portion 4B. Further, the drain region D of the TFT 4 is also connected to the auxiliary capacitance unit 12 as it is. In this way, by providing a part of the TFT 4 so as to overlap the source bus line 2, a space is provided in which the drain cutting site P and the auxiliary capacitance cutting site Q can be cut more stably.

  Further, the conductive material protrusion 12D is connected to the pixel electrode 3 through the contact hole 3A. Further, the conductive material protruding portion 7D is connected to the source bus line 2 through the contact hole portion 2A.

  The conductive material protrusion 12D and the conductive material protrusion 7D overlap each other via the interlayer film 14 as a short-circuit portion 7E.

  An auxiliary capacitance cutting portion Q is disposed between the contact 4A and the auxiliary capacitance electrode 12 (opposite the auxiliary capacitance electrode 5A). Further, a drain cutting site P is disposed between the drain region D of the TFT 4 and the contact 4A.

  Here, an active matrix substrate 140 having the above configuration and a method for manufacturing an active liquid crystal display device using the same will be described.

  First, as shown in FIG. 1B, first, SiON as a base coat 11 is provided to a thickness of 100 nm on a glass substrate 10 as an insulating substrate by plasma CVD.

  Next, a semiconductor layer (for example, a silicon layer) is provided with a thickness of 50 nm on the base coat 11 by plasma CVD. The semiconductor layer is crystallized by laser annealing as a heat treatment. Further, the semiconductor layer is patterned into a predetermined shape in plan view.

  Further, SiON is provided as a gate insulating film 13 with a thickness of 115 nm on this semiconductor layer by plasma CVD.

  Further, a tantalum nitride film with a thickness of 50 nm and a tungsten film with a thickness of 370 nm are sequentially stacked on the gate insulating film 13 as a conductive material by a sputtering method, and the conductive material protrusion 7D and the gate region 1a (7D) are formed. And 1a are patterned into a predetermined shape. The conductive material protrusion 7D and the gate region 1a are composed of an element selected from Ta, W, Ti, Mo, Al, and Cu, or the element as a main component, instead of the material of tantalum nitride and tungsten. It can also be formed of an alloy material or a compound material.

  The silicon semiconductor layer is doped with P (phosphorus) from above the gate region 1a through the gate insulating film 13, and the silicon semiconductor layers on both sides of the gate region 1a are divided into n− region 12b, n + region 12c (source region 12c and drain region). 12c). As a result, the TFT 4 is formed. This is the case of N channel formation, and in the case of P channel formation, the semiconductor layer is doped with B (boron).

  Further, heat treatment is performed to activate the impurity element added to the semiconductor layer.

  Further, as the insulating film, an interlayer film 14 having a two-layer structure of a silicon nitride film and an oxide film is provided with a film thickness of 950 nm by a CVD method.

  Next, a contact hole portion 4A reaching the drain region 12c of the TFT 4 is formed in the gate insulating film 13 and the interlayer film 14, and a contact hole portion 2A reaching the conductive material protruding portion 7D is formed in the interlayer film 14, respectively.

  After that, Ti, Al, and Ti are sequentially stacked by a sputtering method with a thickness of 100 nm, 500 nm, and 100 nm, respectively, as a conductive material (here, the conductive material protrusion 12D and the source bus line 2 are the same material). These are patterned into a predetermined shape to form the conductive material protrusion 12D and the source bus line 2.

  Here, the conductive material protrusion 12 </ b> D and the conductive material protrusion 7 </ b> D are insulated by the interlayer film 14. Here, the conductive material protrusion 12D has a width of 5 μm, the conductive material protrusion 7D has a width of 7 μm, and is perpendicular to each other (intersecting) with the interlayer film 14 sandwiched therebetween, and the overlapping portion 7a is short-circuited. It is a part.

  A process of hydrogenating the semiconductor layer is performed by heat-treating the above stacked structure. This hydrogenation step is a step of terminating dangling bonds in the semiconductor layer with hydrogen contained in the interlayer film 14 (interlayer insulating film) made of a silicon nitride film or the like.

  Further, a resin layer 15 made of an organic insulating material is provided on the interlayer insulating film 14, the conductive substance protruding portion 12 </ b> D, and the source bus line 2. In this case, the resin layer 15 is provided with a film thickness of 1.6 μm.

  Further, a contact hole portion 3A reaching the conductive material protruding portion 12D is formed. Then, ITO to be the pixel electrode 3 is provided by a sputtering method with a film thickness of 100 nm, and patterned into a predetermined shape to provide a plurality of pixel electrodes 3 in a matrix.

  Thereafter, an alignment film (PI; not shown) is printed on the pixel electrode 3 and the resin layer 15 and a rubbing process in a predetermined direction is performed, whereby the active matrix substrate 140 of the present invention is completed.

  After dispersing spherical spacers (not shown) on the alignment film side of the active matrix substrate 140, as shown in FIG. 11, the active matrix substrate 140 and the counter substrate 141 are overlapped with each other, and the active matrix substrate 140 and the counter substrate 141 are overlapped. Are uniformly bonded at predetermined intervals. A liquid crystal layer 142 is sandwiched between these two substrates. The counter substrate 141 is formed with a counter electrode which is a transparent electrode, and after an alignment film (PI; not shown) is printed thereon, a rubbing process similar to the above is performed.

  An active liquid crystal display device 150 as a display device using the active matrix substrate 140 of Embodiment 1 of the present invention is completed.

  Next, a description will be given of a repair method when a pixel defect occurs in the active liquid crystal display device 150 according to the first embodiment of the present invention.

  When an abnormality occurs in the TFT 4 or a current leak occurs between the gate bus line 1 and the source bus line 2 and the pixel electrode 3 or the additional capacitance electrode 12 (additional capacitance electrode 5A), the conductive material protruding portion is formed. Laser irradiation is applied to the corner including the overlapping portion of 12D and conductive material protrusion 7D to short-circuit them.

  In addition, the drain cutting site P and the auxiliary capacitance cutting site Q of the TFT 4 are similarly cut by laser irradiation. As an example of these laser irradiations, a square of 5 μm × 5 μm was used as the laser spot R of YAG laser light. In the state after the laser irradiation, the circuit diagram of FIG. 1A is as shown in FIG. 2B, and the cross-sectional configuration at this time is FIG. 2A.

  However, the laser power, the number of laser shots, and the like vary depending on the thickness of the insulating film, and also vary depending on the film configuration. At the time of repairing the defective picture element, the active matrix substrate 140 having the TFT 4 and the counter substrate are bonded together, and laser irradiation is performed from the glass surface of the active matrix substrate 140 (the back surface side of the TFT 4).

  Thus, when the source bus line 2 and the pixel electrode 3 are short-circuited, the source signal from the source bus line 2 is not connected to the pixel electrode 3 regardless of the gate signal (scanning signal) from the gate bus line 1. Is entered as is. This is neither a perfect bright spot nor a black spot. For example, in the case of full-color black display, a black display potential is input to the source bus line 2, and a black display voltage is applied to the picture element portion (pixel portion). Since the white display is similarly performed in the case of the entire white display, the picture element portion (the picture element electrode 3) subjected to the above correction processing does not operate normally, but is visually defective. As a result, the display state is extremely difficult to distinguish.

  Further, by cutting the auxiliary capacitance cutting portion Q, a defect in the auxiliary capacitance electrode 12 (opposite the auxiliary capacitance electrode 5A) does not affect the pixel electrode 3 and the source bus line 2. Further, by cutting the cutting site P of the drain region D of the TFT 4, a defect in the TFT 4 does not affect the pixel electrode 3, the source bus line 2, and the like.

  For example, in the cross-sectional view of FIG. 2A, the problem of the auxiliary capacitor portion that irradiates the auxiliary capacitor cutting site Q with the laser is the conductive material layer (the conductive material 7D in the wide portion 5A of the auxiliary capacitor bus line 5). Since the potential of the same material is different from the source signal of the source bus line 2, when the wide portion 5 </ b> A of the auxiliary capacitance bus line 5 and the pixel electrode 3 are short-circuited to the semiconductor layer 12, the short-circuiting occurs. Even if the part 7E is short-circuited, it becomes a bright spot or a black spot regardless of the display state (black display, white display, etc.). In this case, by cutting the auxiliary capacity cutting site Q, it is possible to prevent bright spots and black spots.

  In addition, as a defect of the TFT 4 that irradiates the drain region cutting portion P of the TFT 4 with laser, for example, in the cross-sectional view of FIG. 2A, the conductive material layer (the same material as the conductive material 7D in the gate bus line 1). Is composed of a potential different from the source signal of the source bus line 2, so that when the gate bus line 1 and the pixel electrode 3 are short-circuited via the semiconductor layer 12, they are short-circuited at the short-circuit portion 7E. Will be a bright spot or black spot regardless of the display state (black display, white display, etc.). In this case, by cutting the drain region cutting site P, it is possible to prevent the formation of bright spots and black spots.

  When polycrystalline silicon is used for the TFT 4 as the semiconductor layer 12, since the off current is larger than that of amorphous silicon, the TFT 4 is usually composed of a dual gate and a triple gate, so there is a high probability that a problem will occur in the TFT 4. Become. From this, when polycrystalline silicon is used for the TFT 4 as a semiconductor layer, cutting the drain region cutting portion P of the TFT 4 can be expected to be highly effective.

  In this embodiment, the top gate structure is used as the structure for forming the switching element 6. However, the bottom gate structure may be used, or a single gate or a triple gate or more may be used.

  Further, in the first embodiment, the drain cutting portion P is provided in the portion closest to the pixel electrode 3 of the dual gate to cut it. However, as shown in FIG. Depending on the arrangement state, etc., any drain region D (drain region D between the dual gates) may be cut by providing the cutting site P1, or the source region may be cut by providing the cutting site.

  In the first embodiment, the conductive material protrusions 7D and 12D constituting the short-circuit portion 7E may be any conductive material layer (including the semiconductor layer 12), whether existing or new.

  In the first embodiment, a conductive material layer (including the semiconductor layer 12) is disposed on the interlayer film 14 and the resin layer 15 is interposed between the pixel electrodes 3. However, a picture is formed on the interlayer film 14. The element electrode 3 may be disposed and the resin layer 15 may not be provided between the element electrode 3.

  Further, in the first embodiment, the conductive material layer protruding portion 12D (here, the same material as that for forming the source bus line 2) made of a conductive material layer (including the semiconductor layer 12) connected to the drain region D of the TFT 4 is used. And a short-circuit portion 7E in which a conductive material layer protrusion 7D (here, the same material as that for forming the gate bus line 1) connected to the source bus line 2 is overlapped with an interlayer film 14 interposed therebetween, and an additional portion An explanation will be given of a case where an additional capacitance cutting portion Q for cutting between the capacitance electrode 12 (opposite the additional capacitance electrode 5A (wide portion)) and the pixel electrode 3 and a drain region cutting portion P for cutting the drain region D of the TFT 4 are provided. However, the present invention is not limited to this, and only the short-circuit part 7E and the additional capacity cutting part Q may be provided, and only these may be cut. Alternatively, only the short-circuit portion 7E and the drain region cutting portion P may be provided, and only these may be cut.

(Embodiment 2)
In the first embodiment, the overlapping portion of the conductive material layer protruding portion 12D protruding from the drain region D (including the extending portion 12 extending from the drain region D) of the TFT 4 and the conductive material layer protruding portion 7D is provided. In the following embodiments 2 to 4, a case has been described in which the interlayer film 14 therebetween is dielectrically broken and short-circuited, and at least one of the drain region cutting site P and the additional capacitance cutting site Q is cut. As the first projecting portion, the semiconductor layer projecting portion 12A or the conductive material layer projecting portion 12B is projected from the extending portion of the semiconductor layer 12 (one electrode of the additional capacitor), and the gate metal projecting portion 7 or the semiconductor or A case where the overlapping portion 7a or 7b with the second projecting portion 7B made of a conductive material is easily short-circuited by dielectric breakdown of the thin gate insulating film 13 therebetween will be described. In this case, the stray capacitance becomes larger than in the case of the first embodiment (in the case of the interlayer film 14), but short-circuiting is facilitated.

  FIG. 5A is a plan view showing a configuration example of one active matrix substrate of a pair of substrates disposed to face each other with a liquid crystal layer sandwiched therebetween in Embodiment 2 of the active liquid crystal display device of the present invention. FIG. 5B is a cross-sectional view taken along the line AA ′ in FIG. In addition, the same code | symbol is attached | subjected to the structural member which show | plays the effect similar to the conventional structural member of Fig.15 (a)-FIG.15 (c), and the description is abbreviate | omitted. Moreover, since each cross section of FIG.15 (b) and FIG.15 (c) is the same as each cross section in the same position of Fig.5 (a), the description is abbreviate | omitted.

  5 (a) and 5 (b), the active liquid crystal display device according to the first embodiment includes, as a pair of substrates, an active matrix substrate 110 disposed oppositely with a liquid crystal layer serving as a display medium interposed therebetween, and It has a counter substrate. In the active matrix substrate 110, a source bus line 2 is provided on one side of a driving region (for example, a source region) on a glass substrate 10 in addition to the configuration of the conventional active matrix substrate 100 shown in FIGS. 15 (a) to 15 (c). 12c) A portion (extended portion) in which the semiconductor layer extends from the other driving region (for example, the drain region 12c) of the switching element (here TFT4) connected to 12c) to the lower side of the wide portion 5A of the additional capacitor bus line 5 12A, a first protrusion 12A (first layer) is provided that protrudes in the direction toward the gate bus line 1 (the direction parallel to the source bus line 2). The first projecting portion 12A (first layer) is composed of the same semiconductor layer in the same manufacturing process as the semiconductor layer 12, and is hereinafter referred to as a semiconductor layer projecting portion 12A.

  A second protrusion 7 connected from the source bus line 2 via the contact hole 2A is provided. The second protrusion 7 is made of a metal layer as the same conductive material layer in the same manufacturing process as the gate bus line 5, and is hereinafter referred to as a gate metal protrusion 7.

  As shown in FIG. 5B, the semiconductor layer protruding portion 12A and the gate metal protruding portion 7 are partially overlapped (overlapping portion 7a) with the gate insulating film 13 interposed therebetween.

  As a laser irradiation position, a short-circuit portion formed by an overlapping portion of the semiconductor layer protruding portion 12A and the gate metal protruding portion 7 and a drain region cutting portion P1 (drain region between the dual gates) of the TFT 4 are provided. In the pixel portion in which the point defect is detected as a defect in the auxiliary capacitance portion and the TFT 4, the overlapping portion of the semiconductor layer protruding portion 12 A and the gate metal protruding portion 7 is irradiated with laser, and the drain electrode cutting portion P 1 of the TFT 4 is laser-irradiated. Irradiate.

  FIG. 6 is an enlarged view of a main part of the present invention surrounded by a circle indicated by an arrow Z in FIG. 5A. FIG. 6A is a laser irradiation position at the time of defect correction. FIG. 7B is a diagram illustrating a case where a laser spot R is irradiated to the center of the overlapping portion as a laser irradiation position at the time of defect correction.

  As shown in FIG. 6A, the semiconductor layer protruding portion 12 </ b> A protrudes from the upper left end portion of the extending portion 12 upward by a predetermined length with a width of 10 μm in parallel with the source bus line 2. The gate metal protrusion 7 is orthogonal to the source bus line 2 at the lower position of the source bus line 2 (the lower layer position of the stacked structure) in the vicinity of the substantially intermediate position between the gate bus line 1 and the additional capacitor bus line 5 (or As shown in FIG. 2, it protrudes from the source bus line 2 with a width of 10 μm toward the right semiconductor layer protrusion 12A. Further, each of the semiconductor layer protruding portion 12A and the gate metal protruding portion 7 further protrudes about 1 μm from the overlapping portion 7a. The irradiation position of the laser spot R will be described later.

  Here, an active matrix substrate 110 having the above configuration and a method for manufacturing an active liquid crystal display device using the same will be described.

  First, as shown in FIGS. 5A and 5B, a SiON film having a thickness of 100 nm is provided as a base coat film 11 on a glass substrate 10 by plasma CVD.

  Next, a silicon (Si) layer having a thickness of 50 nm is provided as a semiconductor layer by plasma CVD, and crystallization is performed by heat treatment and laser annealing. The Si layer is patterned into a predetermined shape, and the drain region 12c of the TFT 4 extends to the lower layer of the wide portion 5A of the additional capacitor bus line 5 and the semiconductor projecting from the extended portion 12 The layer protrusion 12A is formed integrally.

  In this case, the N channel region 12a of the silicon (Si) layer is doped with P (phosphorus) to form an n− region 12b (LDD region) and an n + region 12c (source region / drain region). Heat treatment is performed to activate the impurity element added to the semiconductor layer. Note that boron is doped in the P channel region.

  Further, a SiON film having a thickness of 115 nm is provided as a gate insulating film 13 on the semiconductor layer including the base coat film 11 and the semiconductor layer protruding portion 12A by plasma CVD.

  A 50-nm-thick tantalum nitride film and a 370-nm-thickness tungsten film are sequentially stacked on the gate insulating film 13 as a gate metal layer (gate metal) by sputtering, and patterned into a predetermined shape. Thus, the gate bus line 1 and the gate electrode 1a as the control electrode are formed by the same material in the same process, and the additional capacitor bus line 5, the wide portion 5A and the gate metal protruding portion 7 are formed. At this time, the overlapping portion 7a of the semiconductor layer protruding portion 12A and the gate metal protruding portion 7 is insulated by the gate insulating film 13 therebetween.

  Further, a silicon nitride film having a thickness of 300 nm is provided as the interlayer film 14 by CVD. This is heat-treated to perform a step of hydrogenating the Si layer. This step is a step of terminating dangling bonds in the Si layer with hydrogen contained in the interlayer film 14 made of a silicon nitride film.

  Further, a resin layer 15 made of an organic insulating material is provided with a film thickness of 1.6 μm, for example.

  Further, a contact hole portion 2 A for connecting the gate metal protrusion 7 and the source bus line 2 is formed in the interlayer film 14 and the resin layer 15. Further, a semiconductor is formed in the gate insulating film 13, the interlayer film 14 and the resin layer 15. A contact hole portion 6A for connecting the extended portion 12 of the layer and the pixel electrode 3 of the transparent electrode is formed.

  Thereafter, Ti, Al, and Ti are stacked as the source metal by sputtering at a film thickness of 100 nm, 500 nm, and 100 nm, respectively, and patterned into a predetermined shape. As a result, the source bus line 2 and the source metal 6 for connecting the pixel electrode 3 and the extending portion 12 are formed. As shown in FIG. 5B, the source bus line 2 and the gate metal protruding portion are formed. 7 is connected through the contact hole portion 2A.

  Further, an ITO film is formed as a transparent electrode to a thickness of 100 nm by a sputtering method, and each pixel electrode 3 is formed by patterning into a plurality of predetermined shapes in a vertical and horizontal matrix form.

  Thereafter, an alignment film (PI; not shown) is printed on the source bus line 2, the pixel electrode 3, and the resin layer 15, and a rubbing process in a predetermined direction is performed, whereby the active matrix substrate 110 of the present invention is completed.

  After dispersing spherical spacers (not shown) on the alignment film side of the active matrix substrate 110, a counter substrate (not shown) is overlaid on the active matrix substrate 110, and the active matrix substrate 110 and the counter substrate (not shown) are stacked. Affix evenly at predetermined intervals. Liquid crystal is sealed between these two substrates, and the sealing port is sealed. On this counter substrate (not shown), a counter electrode, which is a transparent electrode, is formed. After an alignment film (PI; not shown) is printed thereon, a rubbing process similar to the above is performed. ing.

  Thus, an active liquid crystal display device as a display device using the active matrix substrate 110 according to the second embodiment of the present invention is completed.

  Next, a correction method when a pixel defect occurs in the active liquid crystal display device according to the second embodiment of the present invention will be described.

  When an abnormality occurs in the TFT 4 or a current leak occurs between the source bus line 2 and the pixel electrode 3, a pixel defect appears and a point defect occurs as a display problem. In the case where such a display problem occurs, in the first embodiment, the pixel defect (point defect) can be repaired as follows.

  First, an active matrix substrate 110 (TFT substrate) on the side where the TFT 4 is formed and a counter substrate (not shown) are bonded together, and liquid crystal is injected therebetween, and the gate bus line 1 and the source bus line 2 By applying a predetermined electrical signal for inspection to a defect point, a defect point can be detected somewhere in the plurality of picture element portions.

  Thus, the overlapping portion 7a of the gate metal protruding portion 7 and the semiconductor layer protruding portion 12A orthogonal to each other is applied to the picture element portion in which the point defect is detected by one laser irradiation of a relatively low power. The gate insulating film 13 between the metal protrusion 7 and the semiconductor layer protrusion 12A can be dielectrically broken to short-circuit the gate metal protrusion 7 and the semiconductor layer protrusion 12A. At this time, since the active matrix substrate 110 (TFT substrate) and the counter substrate (not shown) are already bonded together, laser irradiation is directed from the outside of the transparent glass surface of the substrate 10 (the back side of the TFT 4) to the inside. Done.

  Similarly, the drain cutting site P1 of the TFT 4 is cut by irradiating with laser. For this laser irradiation, for example, YAG laser light is used. The laser spot R is generally a circle having a diameter of several μm or a square having a side of several μm. In the first embodiment, for example, a square laser spot R of 5 μm × 5 μm is used.

  As in the first embodiment, each of the semiconductor layer protruding portions 12A and the gate metal protruding portion 7 is formed so as to protrude further about 1 μm from the overlapping portion 7a, and the corner including the protruding portion is irradiated with laser. Thus, alignment accuracy during laser irradiation is improved, and laser irradiation can be easily performed to short-circuit the semiconductor layer protruding portion 12A and the gate metal protruding portion 7 with less power.

  Further, as shown by a laser spot R in FIG. 6A, laser irradiation is performed on corners (including the overlapping portion 7a) on both ends of the semiconductor layer (Si layer) protruding portion 12A and the gate metal protruding portion 7. Thus, the semiconductor layer protrusion 12a and the gate metal protrusion 7a can be short-circuited more easily (with less power).

  On the other hand, as shown by a laser spot R in FIG. 6B, when the central portion of the overlapping portion 7a of the semiconductor layer (Si layer) protruding portion 12A and the gate metal protruding portion 7 is irradiated with laser, the laser power is increased. The portion is absorbed (concentrated) only by the semiconductor layer (Si layer) projecting portion 12A, and the semiconductor layer (Si layer) projecting portion 12A and the gate metal projecting portion 7 are hardly short-circuited. Under the same conditions (laser power) as the laser irradiation to the corners of the overlapping portion 7a of the semiconductor layer (Si layer) protruding portion 12A and the gate metal protruding portion 7 as shown by the laser spot R in FIG. As shown by the laser spot R in FIG. 2B, when the central portion of the overlapping portion 7a of the Si protrusion 12A and the gate metal protrusion 7 is irradiated with laser, the semiconductor layer (Si layer) protrusion 12A and the gate The metal protrusion 7 could not be short-circuited reliably.

  Therefore, if the laser irradiation is applied to the corner of the overlapping portion 7a, the semiconductor layer (Si layer) protruding portion 12A and the gate metal are reduced with less laser power than in the case of laser irradiation to the central portion of the overlapping portion 7a. The protrusion 7 can be short-circuited. Further, when the laser power is increased as compared with the laser irradiation to the corner of the overlapping portion 7a, the overlapping portion 7a of the Si protruding portion 12A and the gate metal protruding portion 7 as shown in FIG. Even if the central portion is irradiated with laser, the Si protrusion 12A and the gate metal protrusion 7 can be short-circuited. However, if the laser power is increased too much, the adverse effect of the laser irradiation on the region other than the laser irradiation portion becomes large, and there is a possibility that the element portions other than the Si protruding portion 12A and the gate metal protruding portion 7 are affected. This will be described with reference to FIGS. 7A and 7B.

  FIG. 7B shows an influence portion S2 caused by laser irradiation when the laser spot R is made the same size and only the laser power is increased with respect to the influence portion S1 caused by laser irradiation of FIG. 7A. FIG. In the affected area indicated by L (L1 or L2) in FIG. 7, scattering of Si or gate metal occurs, and if another element enters the region, there is a possibility that a defect due to laser irradiation may occur. . Therefore, it is preferable to perform laser irradiation with a laser power as small as possible, and the position of the laser spot R at the corner of the tip of the overlapping portion 7a of the Si protrusion 12A and the gate metal protrusion 7 (FIG. 6A). ) Is preferably irradiated with a laser. Note that, at the corners other than the corner of the front end portion of the overlapping portion 7a (for example, a position closer to the source bus line 2 than the irradiation position of the laser spot R1), the influence of the laser irradiation position is closer to the source bus line 2. It becomes a problem.

  In this way, the semiconductor layer protruding portion 12A and the gate metal protruding portion 7 are short-circuited, and the cutting portion P of the drain region D of the TFT 4 is cut, so that a defect in the TFT 4 is caused by the pixel electrode 3 or the source bus line. 2, and the source signal (image signal) from the source bus line 2 is directly input to the pixel electrode 3 as it is regardless of the gate signal from the gate bus line 1. become. As a result, the defective picture element portion is in a display state that is neither a perfect luminescent spot nor a black spot. As a result, the defective pixel element that has undergone the above correction process (melt process) does not operate normally, but is in an intermediate display state that is very difficult to visually detect as a defect, and is displayed on the screen. Above, it can be said to be a normal picture element part.

  As described above, according to the second embodiment, even when a pixel defect occurs, a single laser is used to short-circuit the source bus line 2 and the pixel electrode 3 compared to the conventional three times of laser irradiation. It is possible to obtain an active matrix substrate 110 that can easily repair a defective picture element by irradiation with a laser beam with less power. Thereby, the manufacturing yield can be improved and the manufacturing cost can be reduced. Further, by cutting the cut portion P of the drain region D of the TFT 4, a defect in the TFT 4 does not affect the pixel electrode 3, the source bus line 2, and the like.

(Embodiment 3)
In the first and second embodiments, the top gate structure in which the gate metal layer (gate electrode 1a) is disposed on the channel layer 12a of the TFT 4 via the gate insulating film 13 has been described. In the third embodiment, FIG. As shown in FIGS. 9A and 8B and FIGS. 9A and 9B, the gate metal layer (gate electrode 1a) is disposed on the lower layer side of the channel layer 12a via the gate insulating film 13. The bottom gate structure made will be described.

  FIG. 8A shows another configuration example of one of the active matrix substrates of the pair of substrates arranged to face each other with the liquid crystal layer interposed therebetween in the third embodiment of the active liquid crystal display device of the present invention. 8B is a cross-sectional view taken along the line AA ′ in FIG. 9A is a cross-sectional view taken along line X-X ′ in FIG. 8A, and FIG. 9B is a cross-sectional view taken along line Y-Y ′ in FIG.

  8 (a) and 8 (b) and FIGS. 9 (a) and 9 (b), in the active matrix substrate 120 of the active liquid crystal display device in which the TFT 4 has a bottom gate structure, the gate bus line 1, the additional capacitor bus line 5 and A semiconductor layer (including the extending portion 12) having the drain region 12c of the TFT 4 and the semiconductor layer (Si layer) protruding portion 12A is provided on the gate metal layer constituting the gate metal protruding portion 7 via the gate insulating film 13. It has been. Other than that, the configuration is the same as that of the active matrix substrate 110 shown in FIG.

  Also in the active liquid crystal display device using this active matrix substrate 120, the gate insulating film 13 is insulated by irradiating the corner portion of the overlapping portion 7a of the gate metal protruding portion 7 and the semiconductor layer protruding portion 12A only once. It can be easily repaired by destroying and making the defective pixel inconspicuous by short-circuiting the gate metal protrusion 7 and the semiconductor layer protrusion 12A.

(Embodiment 4)
In the second and third embodiments, the gate metal protruding portion 7 made of a conductive metal layer and the overlapping portion 7a of the semiconductor layer protruding portion 12A made of a semiconductor layer are short-circuited during repair. In the fourth embodiment, at the time of repair, the overlapping portion 7b of the gate metal protruding portion 7 made of a conductive metal layer and the conductive material layer protruding portion 12B connected to the extended portion 12 of the semiconductor (Si) layer. Will be described.

  FIG. 10A shows still another example of the configuration of one active matrix substrate of a pair of substrates disposed opposite to each other with the liquid crystal layer interposed therebetween in the fourth embodiment of the active liquid crystal display device of the present invention. FIG. 10B is a cross-sectional view taken along the line BB ′ in FIG.

  In FIG. 5, the semiconductor layer protrusion 12 </ b> A is formed using the same semiconductor (Si) layer as the semiconductor layer extension 12 as the first protrusion connected to the drain region 12 c of the TFT 4. Instead, the first material is made of a semiconductor other than the semiconductor (Si) layer, a metal material such as Ta, W, Ti, Mo, Al, or Cu, or an alloy material or a compound material containing these metal elements as a main component. The protruding portion can be the conductive material layer protruding portion 12B.

  In FIG. 5, the gate metal protrusion 7 is formed using the same metal layer as the gate bus line 1 as the second protrusion connected to the source bus line 2 via the contact hole 2A. The second protrusion 7B is formed of a semiconductor such as Si, a metal material such as Ta, W, Ti, Mo, Al, or Cu, or an alloy material or a compound material containing these metal elements as a main component. Is also possible.

The positions and sizes of the first protrusion 12B and the second protrusion 7B are not limited to the positions and sizes shown in FIGS. 5, 8, and 9, and the first protrusion 12 B is a drain region of the TFT 4. The second protrusion 7b is connected to the source bus line 2 via the contact hole portion 2A. The second protrusion 7b is connected to the extension portion 12 extending from the semiconductor layer having a width to the lower portion of the wide portion 5A of the additional capacitor bus line 5. And the gate insulating film 13 is provided between the two so as to overlap each other. For example, the first protruding portion 12B protrudes downward from the extending portion 12 of the semiconductor layer, or not at the left end portion of the extending portion 12 of the semiconductor layer as shown in FIG. The width of the protruding portion may be wider than that in this case, or the portion further protruding from the overlapping portion 7b may be lengthened. Similarly, the second projecting portion 7B is provided near the gate bus line 1 or near the additional capacity bus line 5 instead of being located at the center position between the gate bus line 1 and the additional capacity bus line 5. It is also possible to make the width of the protruding portion wider than in this case, or to make the portion further protruding from the overlapping portion 7b longer.
(Embodiment 5)
In the first embodiment, the first conductive material layer protruding portion (first protruding portion) 12D protruding from the drain region D of the TFT 4 serving as the switching element and the second layer conductive protruding from the source bus line 2 are used. In the fifth embodiment, the first layer is formed of a switching element, in which the overlapping portion with the active material layer protruding portion (second protruding portion) 7D is short-circuited by dielectric breakdown of the interlayer film 14 therebetween. Superimposition of the first layer 12E that is not directly connected but connected to the pixel electrode 3 and the second conductive material layer protrusion (second protrusion) 7D that is connected to the source bus line 2 This is a case where the part is short-circuited by dielectric breakdown of the insulating film therebetween.

  FIG. 12 (a) shows another configuration of an active matrix substrate, which is one of a pair of substrates opposed to each other with a liquid crystal layer interposed therebetween, as a fifth embodiment of the active liquid crystal display device of the present invention. FIG. 12B is a circuit diagram schematically showing an example of the plan view. In addition, the same code | symbol is attached | subjected to the structural member which show | plays the effect similar to the structural member of FIG. 1 and FIG. In FIG. 12A, the TFT 4 is represented by a single gate, and in FIG. 12B, the TFT 4 is represented by a dual gate.

  In FIG. 12A and FIG. 12B, the first layer 12E made of a conductive material layer (or a semiconductor layer) is formed separately from the conductive material layer protruding portion 12D, and is electrically conductive. The pixel electrode 3 is connected by a unique contact hole 3B different from the contact hole 3A of the conductive material layer 12D.

  In the active liquid crystal display device using the active matrix substrate shown in FIG. 12A, an abnormality occurs in the TFT 4, or the gate bus line 1, the source bus line 2, the pixel electrode 3, and the additional capacitance electrode 12 (additional capacitance electrode). 5A), current leakage occurs between the first layer 12E and the conductive material protrusion 7D including the overlapping portion (short-circuit portion) 7E, which is short-circuited by laser irradiation. In addition, the drain cutting site P and the auxiliary capacitance cutting site Q of the TFT 4 are similarly cut by laser irradiation. At the time of repairing the defective picture element, the active matrix substrate already having the TFT 4 and the counter substrate are bonded together, and laser irradiation is performed from the glass surface side (the back surface side of the TFT 4) of the active matrix substrate.

  Thus, when the source bus line 2 and the pixel electrode 3 are short-circuited, the source signal from the source bus line 2 is not connected to the pixel electrode 3 regardless of the gate signal (scanning signal) from the gate bus line 1. Is entered as is. This is neither a perfect bright spot nor a black spot. For example, in the case of full-color black display, a black display potential is input to the source bus line 2, and a black display voltage is applied to the pixel portion. Since the white display is similarly performed in the case of the entire white display, the picture element portion (the picture element electrode 3) subjected to the above correction processing does not operate normally, but is visually defective. As a result, the display state is extremely difficult to distinguish. Further, by cutting the auxiliary capacitance cutting portion Q, a defect in the auxiliary capacitance electrode 12 (opposite the auxiliary capacitance electrode 5A) does not affect the pixel electrode 3 and the source bus line 2. Further, by cutting the cutting site P of the drain region D of the TFT 4, a defect in the TFT 4 does not affect the pixel electrode 3, the source bus line 2, and the like.

  In FIG. 12A, the correcting element constituted by the contact hole 3B, the first layer 12E, the conductive material layer protruding portion 7D, and the contact hole 2A can be arranged independently of the TFT 4 as the switching element. Therefore, the degree of freedom in design is high, and it is possible to easily cope with designs with many restrictions.

In the fifth embodiment, the first layer 12E connected to the pixel electrode 3 via the contact hole 3B, and the second conductive material layer connected to the source bus line 2 via the contact hole 2A. The case where the overlapping portion with the protruding portion (second protruding portion) 7D is short-circuited by dielectric breakdown of the insulating film therebetween is not limited to this, and the connection between the first layer 12E and the pixel electrode 3 is not limited thereto. In addition, at least one of the connection of the second conductive layer protrusion (second protrusion) 7D and the source bus line (signal wiring) 2 may be connected via the contact hole.
(Embodiment 6)
In the first to fifth embodiments, the case where the pixel electrode uniformly covers the pixel (pixel) has been described. However, in the sixth embodiment, a slit is formed in the pixel electrode such as a vertical alignment mode or an IPS mode. This is a case where the formed structure or the pixel electrode is a structure composed of a plurality of electrodes, and a bright display can be realized by optimizing the positional relationship between the correction element and the slit or electrode.

  FIG. 13 shows an active liquid crystal display device according to a sixth embodiment of the present invention, in the normally black vertical alignment mode, in which one of a pair of substrates opposed to each other with a liquid crystal layer interposed therebetween is active. It is a top view which shows the structural example of a matrix substrate. In addition, the same code | symbol is attached | subjected to the structural member which show | plays the effect similar to the structural member of FIG.

  In FIG. 13, the picture element electrode 3 is provided with a slit 3C for defining the alignment control direction of the liquid crystal layer. In the slit 3C portion, the liquid crystal molecules in the liquid crystal layer are tilted by being affected by the electric field of the neighboring pixel electrode 3 portion when a voltage is applied, so that the alignment direction of the liquid crystal molecules can be controlled. In this configuration, since the liquid crystal molecules in the slit 3C portion do not fall down, the transmittance is low and the influence on the display is small.

  Therefore, as shown in FIG. 13, by disposing a part of the conductive material layer protrusion (second layer) 7D in the slit 3C portion, it is possible to suppress a decrease in transmittance due to the arrangement of the correction element. That is, the pixel electrode 3 is made of a transparent conductive film, and a part of the conductive material layer protruding portion (second layer) 7D is arranged immediately below (or below) the slit 3C provided in the pixel electrode 3. Yes. The conductive material layer protruding portion (first layer) 12E is also preferably arranged so as to extend to a position below the slit 3C. Here, immediately below (or below) the slit 3C, the first layer 12E connected to the pixel electrode 3 and the conductive material layer protrusion (second protrusion; second protrusion) connected to the source bus line 2 are used. Layer) The overlapping part with 7D is also arranged.

  In the slit 3C portion, since the display is darkest in the vicinity of the center, it is preferable that the center line of the slit 3C is closer to the center line of the conductive material layer protrusion 7D. For example, the distance between both center lines is in the range of 0 μm to 3 μm. It is preferable to be within. More preferably, both center lines coincide with each other, and in this case, the decrease in transmittance can be minimized.

  In FIG. 13, a part of the conductive material layer protruding portion (second layer) 7 </ b> D is disposed below the slit 3 </ b> C provided in the pixel electrode 3. A part of the conductive material layer protrusion (second layer) 7D may be disposed above the provided slit. In addition, a part of at least one of the first layer 12E and the second layer 7D may be disposed above or below the slit provided in the pixel electrode 3.

  FIG. 14 shows an active matrix which is one of a pair of substrates disposed opposite to each other in the normally black IPS mode in Embodiment 6 of the active liquid crystal display device of the present invention. It is a top view which shows the structural example of a board | substrate. In addition, the same code | symbol is attached | subjected to the structural member which show | plays the effect similar to the structural member of FIG.

  In FIG. 14, the pixel electrode 3 is configured by a first electrode 3D and a second electrode 3E as a plurality of electrodes to which different potentials can be applied, and between the first electrode 3D and the second electrode 3E. The liquid crystal layer is driven by the lateral electric field.

  When a voltage is applied, the liquid crystal molecules operate under the influence of the transverse electric field between the first electrode 3D and the second electrode 3E, and light is transmitted. However, the liquid crystal molecules are aligned with each other at the portion on the electrode. The display is dark because does not move. Here, when the electrode is not transparent, light is not transmitted.

  Therefore, as shown in FIG. 14, by disposing the first layer 12E immediately below (or below) the first electrode 3D, it is possible to suppress a decrease in transmittance due to the arrangement of the correction element. That is, the pixel electrode 3 is made of a transparent conductive film, and a part of the conductive material layer protruding portion (first layer) 12E is arranged immediately below (or below) the first electrode 3D of the pixel electrode 3. . The conductive material layer protrusion (second layer) 7D is also preferably arranged so as to extend below the first electrode 3D where the first electrode 3D is located. Here, immediately below (or below) the first electrode 3D, the first layer 12E connected to the first electrode 3D of the pixel electrode 3 and the conductive material layer protruding portion (the first layer connected to the source bus line 2) 2 protrusions; second layer) 7D is also arranged.

  In the portion of the first electrode 3D, since the display is darkest around the center, the center line of the first electrode 3D (center line extending in the longitudinal direction) and the center line of the conductive material layer protruding portion (first layer) 12E For example, the distance between both center lines is preferably in the range of 0 μm to 3 μm. More preferably, both center lines coincide with each other, and in this case, the decrease in transmittance can be minimized.

  Although not shown in FIG. 14 of the sixth embodiment, the first layer 12E may be disposed below the second electrode 3E. Thereby, the transmittance | permeability fall by arrangement | positioning of the element for correction can be suppressed small. Furthermore, it is preferable that the conductive material layer protruding portion (second layer) 7D is also arranged so as to extend below the second electrode 3E with the first layer 12E.

  In FIG. 14 of the sixth embodiment, a part of the conductive material layer protruding portion (first layer) 12E is disposed below the first electrode 3D. However, the present invention is not limited to this, and the upper portion of the first electrode 3D is not limited thereto. A part of the conductive material layer protruding portion (first layer) 12E may be disposed at the position. In addition, a part of at least one of the first layer 12E and the second layer 7D may be disposed above or below the first electrode 3D. In this case, the first layer 12E and the second layer 7D are assumed to be opaque materials, but even if this is a transparent material, the display is darkened by the amount of light transmitted through the first layer 12E and the second layer 7D. Since it is certain, it is preferable to dispose the first layer 12E and the second layer 7D in a portion (slit portion or multiple electrode portion) that does not contribute to display in order to display brighter.

13 and 14 of the sixth embodiment, as in the case of FIG. 12 of the fifth embodiment, the switching element (TFT4) and the first layer 12E made of a semiconductor layer or a conductive material layer are directly connected. However, as shown in FIG. 1, the conductive material layer protruding portion (first step) protruding from the drain region D of the TFT 4 serving as a switching element is connected to the pixel electrode 3D via the contact hole portion. (1 protrusion) 12D is the first layer, and this overlaps the conductive material layer protrusion (second protrusion) 7D protruding from the source bus line 2, and the interlayer film 14 therebetween is dielectrically broken down. Similarly, when applying the short-circuiting configuration to the vertical alignment mode or the IPS mode, it is possible to achieve bright display by optimizing the positional relationship between the correction element and the slit or electrode. The ability.
In the first to sixth embodiments, the liquid crystal display device using the liquid crystal as the display medium has been described as the display device. It is. In the first to fourth embodiments, an active liquid crystal display device using a thin film transistor (TFT 4) as a switching element has been described. However, the present invention is not limited to this, and a liquid crystal display device using an MIM element, a diode element, a MOS transistor, or the like. The present invention can also be applied to various display devices such as. Further, in the fourth embodiment, the case where the switching element structure such as the TFT 4 is a dual gate top gate structure has been described, but it may be a bottom gate structure or a single gate or a triple gate or more.

  In the first to sixth embodiments, the first protrusion and the second protrusion are short-circuited by irradiating the corner including the overlapping portion of the first protrusion and the second protrusion with YAG laser light. However, the present invention is not limited to this, and the first protrusion and the second protrusion can be short-circuited by applying thermal energy such as laser light (laser beam) other than YAG laser light.

  Furthermore, in the first to sixth embodiments, the gate metal layer made of a conductive material is configured as a second protruding portion with a laminated structure of tantalum nitride and tungsten, but Ta, W, Ti, Mo, Al, and Cu Alternatively, a metal material such as these, or an alloy material or a compound material containing these metal elements as a main component may be used. In short, the material of the second protrusion may be any material that has good compatibility with the short circuit and the electrical connection with the first protrusion, and can efficiently and reliably be short-circuited and electrically connected.

  Further, in the first embodiment, the conductive material of the source bus line 2 and the conductive material protrusion 12D is disposed on the interlayer film 14, and the resin layer 15 is disposed between the conductive material and the pixel electrode 3. Although not limited to this, the source bus line 2 and the conductive material protrusion 12D are provided on the interlayer film 14, and the pixel electrode 3 is directly disposed only on the conductive material protrusion 12D. There may be a configuration in which there is no resin layer 15 between the active substance projecting portion 12D and the pixel electrode 3 and these are electrically connected to each other. In this case, the source bus line 2 and the pixel electrode 3 are separated from each other. The interlayer film 14 may have a multi-layer structure such as two layers.

  Although not particularly described in the second embodiment, in FIG. 5B, the contact hole 6A is formed only in the interlayer film 14, and the source metal 6 is provided directly on the interlayer film 14. The extended portion 12 of the semiconductor layer and the source metal 6 may be electrically connected via the contact hole portion 6A. In this case, a new contact hole portion is formed in the resin layer 15 on the source metal 6, the pixel electrode 3 is provided on the resin layer 15, and the source metal 6 and the picture are connected through the new contact hole portion. The elementary electrode 3 is electrically connected. As a result, the contact hole portion used here can be made shallow, the area occupied by one contact hole portion can be reduced, and the contact stability of the upper and lower layers via the contact hole portion can also be improved.

  In the first to sixth embodiments, the first protruding portion protruding from the extending portion 12 is connected to the source bus line 2 via the contact hole portion, and the source bus line 2 is connected to the first protruding portion side. Although the second protruding portion partially overlapped has been described, at least one of the first protruding portion and the second protruding portion may not be the protruding portion.

  In the first to sixth embodiments, the width and thickness of the line cutting portion are not changed in the cutting portions P and Q. However, in order to facilitate cutting by laser irradiation, the relationship with the current capacity is also provided. It is possible to reduce the width and thickness of the cut portion. In this case, not only the cutting by laser irradiation is facilitated, but also a mark as to which part is cut, and the success rate can be improved. In order to change the line width, the shape can be devised, for example, a semicircular cutout. Even if a colored resin member is positioned behind it, it is effective as a mark.

  As mentioned above, although this invention has been illustrated using preferable Embodiment 1-6 of this invention, this invention should not be limited and limited to this Embodiment 1-6. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range based on the description of the present invention and the common general technical knowledge from the description of specific preferred embodiments 1 to 6 of the present invention. Patents, patent applications, and documents cited herein should be incorporated by reference in their entirety, as if the contents themselves were specifically described herein. Understood.

  For example, in the field of image display devices such as liquid crystal televisions and computer terminal display devices, repair according to the type of pixel defect so that the defective pixel is more difficult to see without being adversely affected by defective parts with fewer laser irradiation processes. Can be performed more easily, and the manufacturing yield can be improved.

(A) is a circuit diagram schematically showing a unit configuration example of an active matrix substrate in Embodiment 1 of the active liquid crystal display device of the present invention, and (b) is a switching element portion and a source bus line short-circuit portion of (a). FIG. FIG. 1A is a main part sectional view schematically showing a state after laser irradiation in the active matrix substrate of FIG. 1A, and FIG. (A) is a top view which shows the principal part structure of the active matrix substrate of Fig.1 (a), (b) is the elements on larger scale of (a). FIG. 2 is a circuit diagram schematically showing another unit configuration example different from the active matrix substrate of FIG. 1. (A) is a top view which shows the structural example of one active-matrix board | substrate among a pair of board | substrates opposingly arranged on both sides of a liquid crystal layer in Embodiment 2 of the active type liquid crystal display device of this invention. (B) is sectional drawing of the AA 'line | wire part of (a). It is an enlarged view of the principal part of this invention enclosed with (circle) shown by the arrow Z of Fig.1 (a), Comprising: (a) shows the case where the laser spot R is irradiated to a corner as a laser irradiation position at the time of defect correction. FIG. 6B is a diagram showing a case where a laser spot R is irradiated to the center of the overlapping portion as a laser irradiation position at the time of defect correction. (A) And (b) is a figure for demonstrating the influence which arises by laser irradiation at the time of defect correction, respectively. (A) is a top view which shows the other structural example of one active-matrix board | substrate among a pair of board | substrates opposingly arranged on both sides of a liquid-crystal layer in Embodiment 3 of the active type liquid crystal display device of this invention. (B) is sectional drawing of the AA 'line | wire part of (a). (A) is sectional drawing of the X-X 'line part of Fig.8 (a), (b) is sectional drawing of the Y-Y' line part of Fig.8 (a). (A) is a plane showing still another configuration example of one active matrix substrate of a pair of substrates opposed to each other with a liquid crystal layer interposed therebetween in Embodiment 4 of the active liquid crystal display device of the present invention. FIG. 4B is a cross-sectional view taken along the line BB ′ in FIG. 1 is a schematic diagram illustrating a partial cross-sectional configuration of an active liquid crystal display device according to Embodiment 1. FIG. (A) is another configuration example of an active matrix substrate which is one of a pair of substrates opposed to each other with a liquid crystal layer interposed therebetween in Embodiment 5 of the active liquid crystal display device of the present invention. The top view to show, (b) is a circuit diagram which shows it typically. Of Embodiment 6 of the active liquid crystal display device of the present invention, in the normally black vertical alignment mode, the configuration of an active matrix substrate, which is one of a pair of substrates opposed to each other with a liquid crystal layer interposed therebetween It is a top view which shows an example. Of Embodiment 6 of the active liquid crystal display device of the present invention, in the normally black IPS mode, a configuration example of an active matrix substrate which is one of a pair of substrates disposed to face each other with a liquid crystal layer interposed therebetween FIG. (A) is a top view which shows the structural example of the basic unit in one active matrix board | substrate of a pair of board | substrates opposingly arranged on both sides of a liquid crystal layer in the conventional active type liquid crystal display device, (b) (A) is sectional drawing of the XX 'line part, (c) is sectional drawing of the YY' line part of (a). (A) is a top view which shows the example of a structure of the basic unit in one active matrix board | substrate of a pair of board | substrates opposingly arranged on both sides of a liquid crystal layer in other conventional active type liquid crystal display devices, b) is an enlarged view showing a portion surrounded by a circle in (a). In another conventional active liquid crystal display device, it is a top view which shows the structural example of the basic unit in one active matrix board | substrate among a pair of board | substrates opposingly arranged on both sides of a liquid crystal layer.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Gate bus line 2 Source bus line 3 Picture element electrode 3C Slit 3D 1st electrode 3E 2nd electrode 4 Switching element 5 Auxiliary capacity bus line 7 Gate metal protrusion part 7B 2nd protrusion part 7D which consists of a semiconductor or an electroconductive substance, 12D Conductive substance protrusion 7E Short-circuit part 12 Semiconductor layer (including additional capacitance electrode)
12E 1st layer 13 Gate insulating film 14 Interlayer film P Drain cutting part Q Additional capacity cutting part

Claims (35)

In an active substrate in which a plurality of picture element portions each having a switching element in which a signal wiring is connected to one driving region and a picture element electrode connected to the other driving region of the switching element are arranged two-dimensionally,
By applying energy, the other driving region cutting portion that enables the semiconductor layer constituting the other driving region of the switching element to be separated from the pixel electrode, and the additional connected to the semiconductor layer constituting the other driving region of the switching element At least one of additional capacity cutting sites that allow the capacitive part to be separated from the pixel electrode;
A first layer made of a conductive material layer or a semiconductor layer connected to the pixel electrode, and a metal layer connected to the signal wiring, the same metal as the scanning wiring connected to the control region of the switching element active substrate having sandwiching an insulating film between the second layer having a layer, the shorted portions that are partially overlapped so as to be short-circuited by the application of energy. In an active substrate in which a plurality of picture element portions each having a switching element in which a signal wiring is connected to one driving region and a picture element electrode connected to the other driving region of the switching element are arranged two-dimensionally,
By applying energy, the other drive region cutting portion that enables the semiconductor layer constituting the other drive region of the switching element to be separated from the pixel electrode, and the addition connected to the semiconductor layer constituting the other drive region of the switching element At least one of additional capacity cutting sites that allow the capacitive part to be separated from the pixel electrode;
A first layer composed of a semiconductor layer constituting the other drive region of the switching element or a conductive material layer connected to the semiconductor layer, and a metal layer connected to the signal wiring, the control region of the switching element An active substrate having a short-circuit portion partially overlapped so as to be short-circuited by energy application with a scanning wiring connected to the second layer made of the same metal layer sandwiching an insulating film therebetween. In an active substrate in which a plurality of picture element portions each having a switching element in which a signal wiring is connected to one driving region and a picture element electrode connected to the other driving region of the switching element are arranged two-dimensionally,
By applying energy, the other drive region cutting portion that enables the semiconductor layer constituting the other drive region of the switching element to be separated from the pixel electrode, and the addition connected to the semiconductor layer constituting the other drive region of the switching element At least one of additional capacity cutting sites that allow the capacitive part to be separated from the pixel electrode;
A first layer composed of a conductive material layer or a semiconductor layer connected to the pixel electrode and a second layer composed of a conductive material layer or a semiconductor layer connected to the signal wiring sandwich an insulating film therebetween. , possess a shorted portions that are partially overlapped so as to be short-circuited by the application of energy,
An active substrate in which at least one of the first layer and the second layer is made of a semiconductor silicon layer . In an active substrate in which a plurality of picture element portions each having a switching element in which a signal wiring is connected to one driving region and a picture element electrode connected to the other driving region of the switching element are arranged two-dimensionally,
By applying energy, the other drive region cutting portion that enables the semiconductor layer constituting the other drive region of the switching element to be separated from the pixel electrode, and the addition connected to the semiconductor layer constituting the other drive region of the switching element At least one of additional capacity cutting sites that allow the capacitive part to be separated from the pixel electrode;
A first layer composed of a semiconductor layer constituting the other drive region of the switching element or a conductive material layer connected to the semiconductor layer, and a second layer composed of a conductive material layer or a semiconductor layer connected to the signal wiring Doo is across the insulating film between, possess a shorted portions that are partially overlapped so as to be short-circuited by the application of energy,
An active substrate in which at least one of the first layer and the second layer is made of a semiconductor silicon layer . A plurality of scanning wirings are provided in parallel, a plurality of the signal wirings are provided in parallel so as to cross the plurality of scanning wirings, and the pixel electrodes are arranged in a matrix for each crossing portion of both wirings, The active substrate according to claim 1, wherein a scanning wiring is connected to a control region of the switching element. Active substrate according to any one of claims 1 to 5 extending portion extended the semiconductor layer constituting the other drive region of the switching element is connected to the pixel electrode via a contact hall. An extended portion of a semiconductor layer constituting the other drive region of the switching element is connected to a conductive material layer through a first contact hole portion, and the conductive material layer is connected to the conductive material layer through a second contact hole portion. active substrate according to any one of claims 1 to 5, which is connected to the picture element electrode. The scanning lines parallel to the additional capacitor lines are provided for each of the scanning lines, the extended portion of at least a part of the additional capacity lines of the wide portion and the insulating film interposed therebetween disposed opposite to and claims 6 or 7 Active substrate as described in The first layer is a first protruding portion protruding from the extending portion, and the second layer is connected to the signal wiring through a third contact hole portion, and the first wiring is connected to the first wiring from the signal wiring. 8. The active substrate according to claim 6 , wherein the active substrate is a second protrusion that protrudes so as to partially overlap the protrusion. The active substrate according to claim 9 , wherein the first projecting portion is a conductive material layer in which the extending portion is connected via a first contact hole portion. The active substrate according to claim 1, wherein the insulating film is made of the same material as the gate insulating film of the switching element. The active substrate according to claim 1, wherein the insulating film is an interlayer film. The active substrate according to claim 1, wherein the first layer is made of the same metal layer as the signal wiring, and the second layer is made of the same metal layer as the scanning wiring. The active substrate according to claim 9 , wherein each of the first protrusion and the second protrusion protrudes from the overlapping portion by a predetermined amount. The active substrate according to claim 1, wherein the switching element is any one of a thin film transistor element, an MIM element, a MOS transistor element, and a diode. The active substrate according to claim 15 , wherein the thin film transistor element is a polycrystalline silicon thin film transistor using a polycrystalline silicon layer as the semiconductor layer. The active substrate according to claim 15 , wherein the thin film transistor element has a top gate structure in which a control region is provided on an upper layer side of a channel layer connected to the semiconductor layer via the insulating layer. The active substrate according to claim 15 , wherein the thin film transistor element has a bottom gate structure in which a control region is provided on the lower layer side of a channel layer connected to the semiconductor layer via the insulating layer. At least one of the first layer and the second layer is a metal material of any one of Ta, W, Ti, Mo, Al, and Cu, and an alloy material mainly containing at least one of these metal elements Or the active substrate in any one of Claims 1-4 which consists of compound materials. The active substrate according to claim 5 , wherein a part or all of the switching element is provided on a lower layer side of the signal wiring in a plan view, and the scanning wiring portion intersecting with the signal wiring is also used as a gate region of the switching element.   21. The switching device according to claim 20, wherein a part of the switching element is provided on a lower side of the signal wiring in a plan view lower layer side, and the remaining part is provided on a lower side of the pixel electrode in a plan view lower layer side. The active substrate as described. Wherein a connection of the first layer and the pixel electrode, the active substrate according to claim 1 or 3 is connected via a contact hole portion of at least either of said second layer and the signal line connection.    The pixel electrode is made of a transparent conductive film, and a part of at least one of the first layer and the second layer is disposed below or above a slit provided in the pixel electrode. Item 23. The active substrate according to any one of Items 1 to 22.    24. The active substrate according to claim 23, wherein any one of the layers and the slit is linear, and an interval between the center line of any one of the layers and the center line of the slit is in a range of 0 μm or more and 3 μm or less.    25. The active substrate according to claim 24, wherein a center line of the slit coincides with a center line of any one of the layers.    The pixel electrode is composed of a plurality of electrodes having different potentials, and a part of at least one of the first layer and the second layer is disposed below or above at least one of the plurality of electrodes. The active substrate according to claim 1, wherein the active substrate is disposed.    27. The one of the layers and one electrode are both linear, and the distance between the center line of the one electrode and the center line of the one of the layers is in the range of 0 μm to 3 μm. Active board.    28. The active substrate according to claim 27, wherein a center line of the one electrode coincides with a center line of any one of the layers.   An active substrate according to any one of claims 1 to 28 and a display medium disposed between the active substrate and the active substrate, the counter electrode being opposed to the plurality of pixel electrodes of the active substrate. And a display device capable of displaying a screen by driving the display medium by a display signal applied between the pixel electrode and the counter electrode.   When at least one of the plurality of picture element parts is a defective picture element part, the insulating film between the first layer and the second layer of the defective picture element part is destroyed by energy irradiation, and the first layer and the second layer The display device according to claim 29, wherein and are short-circuited.   30. The display device according to claim 29, wherein the display medium is one of a liquid crystal, an EL light emitting layer, and a plasma light emitter. 32. A defect detection step of detecting a point defect of the picture element portion by applying a predetermined signal from the scanning wiring and the signal wiring between the picture element electrode and the counter electrode of the display device according to claim 29. When,
The defective pixel portion where the point defect is detected is irradiated with energy from the outside of the substrate to destroy the insulating film between the first layer and the second layer, thereby short-circuiting the first layer and the second layer. A short circuit process,
At least one of the other drive region cutting portion and the additional capacitance cutting portion of the switching element is irradiated with energy from the outside of the substrate, and the semiconductor layer constituting the other driving region, the pixel electrode, and the additional capacitance portion A display device manufacturing method comprising: a cutting step of separating at least one of the above.   In the short-circuiting step, energy irradiation is performed on both protruding portions protruding from the overlapping portion of the first protruding portion of the first layer and the second protruding portion of the second layer and the corner including the overlapping portion. The manufacturing method of the display apparatus of Claim 32 performed.   The method for manufacturing a display device according to claim 32, wherein a laser beam is used as the energy. Provided for each pixel electrode, each switching element constituting a scanning signal driving circuit capable of outputting a scanning signal to the scanning wiring, and a signal wiring driving circuit capable of outputting a display signal to the signal wiring. 33. The method of manufacturing a display device according to claim 32, wherein each switching element for driving a pixel part is formed in the same process using the same material.

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