JP3967479B2

JP3967479B2 - Plating equipment

Info

Publication number: JP3967479B2
Application number: JP34261198A
Authority: JP
Inventors: 文夫栗山; 浩幸上山; 純逸山川
Original assignee: Ebara Corp
Current assignee: Ebara Corp
Priority date: 1998-12-02
Filing date: 1998-12-02
Publication date: 2007-08-29
Anticipated expiration: 2018-12-02
Also published as: JP2000160399A

Description

【０００１】
【発明の属する技術分野】
本発明はめっき装置に関し、特に被めっき体を洗浄した洗浄液中に含まれる金属イオンを除去して一般排水とする金属イオン除去機能を具備するめっき装置に関するものである。
【０００２】
【従来の技術】
半導体製造プロセスでは、めっき工程は配線用又は膜付用として多用されている。図６は従来のこの種のめっき装置の構成を示す図である。めっき装置は図示するように、めっき部１と管理部２とからなり、めっき部１にはめっき槽１−２が、管理部２に補充槽２−２と補充槽２−３が設置されている。
【０００３】
めっき槽１−２にはめっき液１−１が収容され、該めっき液１−１中には治具に装着された被めっき基板１−４と陽極電極（溶解性）１−３とが対向して配置され、該被めっき基板１−４と陽極電極１−３との間にはめっき電源１−５が接続されている。また、ポンプ１−１４及び温度調節器１−１５が設けられ、ポンプ１−１４によりめっき液１−１が温度調節器１−１５に送られ、該温度調節器１−１５でめっきを行なうに最適な液温に調整されてめっき槽１−２に戻されるようになっている。
【０００４】
補充槽２−３には所定濃度のめっき液（例えば所定濃度の硫酸銅を主体とした溶液）２−８が収容されて、めっき液２−８はポンプ２−１１により配管３を通してめっき槽１−２に供給されるようになっており、補充槽２−２には添加剤液２−７が収容され、ポンプ２−９により配管４を通してめっき槽１−２に供給されるようになっている。運転時には図示しない分析装置でめっき槽１−２内のめっき液１−１の組成及び濃度を分析し、該組成及び濃度が所定の値に維持されるように、補充槽２−２や補充槽２−３から添加剤液２−７やめっき液２−８がめっき槽１−２に供給される。
【０００５】
被めっき基板１−４と陽極電極１−３の間にめっき電源１−５からめっき電流を通電すると、溶解性の陽極電極（例えば、含リン銅電極）１−３から放出された金属イオン（例えば、Ｃｕ²⁺）は被めっき基板１−４の表面に付着し、金属めっき膜が形成される。陽極電極１−３はめっき液１−１中に金属イオンを放出して消耗していくから、定期的に該陽極電極１−３を交換する必要がある。
【０００６】
上記構成のめっき装置において、めっき後の被めっき基板１−４を洗浄するには多くの洗浄水が排出される。特に被めっき基板１−４が半導体ウエハ等の半導体用基板である場合、多くの洗浄水や純水を消費する。また、この洗浄水にはめっき液が含まれているために金属イオン除去等の処理を必要とするため排水処理設備に大きな負担がかかる。また、めっき液の劣化によるめっき液の廃液処理を行なう場合にも同様のことがいえる。
【０００７】
そこで、めっき装置に洗浄水処理機能及びめっき廃液再生機能を持たせ、めっき液及びめっき液を含む液の処理について自己完結的な専用処理機能を持たせることは、一般設備の負荷軽減を考慮すると効率的な方法といえる。このとき、めっき液を調整・管理するめっき液調整機能、洗浄に使用済みの洗浄水から金属イオンを取り除く金属イオン除去機能、めっき廃液を再調整・再生するめっき液再生機能をクリーン度が要求されるめっき部１が設置されている部屋とは異なる部屋に設置し、めっき液の管理やめっき液の処理及び洗浄水の処理を行なうことはメンテナンス上大きなメリットがあるが、従来このような要望に答えるめっき装置が開発されていない。
【０００８】
【発明が解決しようとする課題】
本発明は上述の点に鑑みてなされたもので、めっき装置に洗浄水処理機能及びめっき廃液再生機能、めっき液及びめっき液を含む液の処理について自己完結的な専用処理機能を持たせ、且つこれらの諸機能をクリーン度が要求されるめっき部が設置されている部屋とは異なる部屋で行なわれるようにし、効率的でメンテナンス上も好適なめっき装置を提供することを目的とする。
【０００９】
【課題を解決するための手段】
上記課題を解決するため請求項１に記載の発明は、被めっき体にめっきを行なうめっき部と、めっき液及びめっき液を含む液の調整を行う管理部とからなるめっき装置において、めっき部はめっき液を収容すると共に、陽極電極と陰極としての被めっき体を対向して配置しめっきを行なうめっき槽、被めっき体をめっき後に洗浄する洗浄装置を具備し、管理部はめっき液の成分及び／又は濃度を調整する調整槽、該調整槽にめっき液及び補充剤液を注入する補充機構、該調整槽のめっき液の一部を抽出して該めっき液の成分分析又は／及び濃度測定をする分析装置、洗浄装置で被めっき体を洗浄した洗浄液中に含まれる金属イオンを取り除いて一般排水とする装置、一般排水を排出する排水機構を具備し、めっき部と前記管理部をそれぞれ別々の部屋に設置できるように別体として構成し、管理部の調整槽とめっき部のめっき槽を配管で接続し、該調整槽からめっき部へ、めっき部から調整槽にめっき液を循環させる液循環機構を設け、めっき部を管理部が設置された第２の部屋よりクリーン度の高い第１の部屋に設置したことを特徴とする。
【００１０】
上記のように、管理部にめっき液の成分及び／又は濃度を調整する調整槽、該調整槽にめっき液及び補充剤液を注入する補充機構、該調整槽のめっき液の一部を抽出して該めっき液の成分分析又は／及び濃度測定をする分析装置、洗浄装置で被めっき体を洗浄した洗浄液中に含まれる金属イオンを取り除いて一般排水とする装置、一般排水を排出する排水機構を具備し、めっき部と前記管理部をそれぞれ別々の部屋に設置できるように別体として構成し、管理部の調整槽とめっき部のめっき槽を配管で接続し、該調整槽からめっき部へ、めっき部から調整槽にめっき液を循環させる液循環機構を設け、めっき部を管理部が設置された第２の部屋よりクリーン度の高い第１の部屋に設置したので、洗浄水処理及びめっき廃液再生、めっき液及びめっき液を含む液の処理からなる自己完結的な専用処理機能を有することなる。従って、これらの処理が効率的に行われると同時に、めっき装置の殆どのメンテナンス作業を管理部が設置されているクリーン度の低い第２の部屋で行うことができ、メンテナンス作業が向上すると共にめっき部が設置されているクリーン度の高い第１の部屋の汚染を防止できる。
【００１１】
また、請求項２に記載の発明は、請求項１に記載のめっき装置において、第１の部屋はクリーンルームであり、第２の部屋は該クリーンルームよりクリーン度の低いユーティリティルームであることを特徴とする。
【００１２】
また、請求項３に記載の発明は、請求項１又は２に記載のめっき装置において、第１の部屋に設置されるめっき部が複数であるのに対し、第２の部屋に設置される管理部は１つであることを特徴とする。
【００１３】
【発明の実施の形態】
以下、本発明の実施の形態例を図面に基づいて説明する。図１は本発明に係るめっき装置の構成例を示す図である。図１において、図６と同一符号を付した部分は同一又は相当部分を示す。本めっき装置は図示するように、めっき部１と管理部２とからなる。
【００１４】
めっき部１には、めっき槽１−２と洗浄装置１−６が設けられている。めっき槽１−２内にはめっき液１−１が収容され、該めっき液１−１中に陽極電極１−３と陰極となる治具に装着された被めっき基板（例えば、半導体ウエハ）１−４が対向して配置されている。陽極電極１−３と被めっき基板１−４の間にはめっき電源１−５が接続され、該めっき電源１−５から陽極電極１−３と被めっき基板１−４の間にめっき電流を通電することにより、被めっき基板１−４の表面に金属めっき膜（例えば、銅めっき膜）を形成する。
【００１５】
洗浄装置１−６はめっき後の被めっき基板１−４’を洗浄するための装置で、めっき後の被めっき基板１−４’に向けて洗浄水（例えば、純水）１−７を噴射する洗浄ノズル１−８と、該洗浄ノズル１−８から噴射された使用済みの洗浄水１−７’を受けて収容する洗浄水槽１−９と、該洗浄水槽１−９の洗浄済みの洗浄水１−７’を管理部２に送るポンプ１−１０を具備する。
【００１６】
管理部２は調整槽２−１、補充槽２−２、補充槽２−３、めっき液再生装置２−４、金属イオン採取器２−５及び分析装置２−６を具備する。調整槽２−１には調整されためっき液１−１が収容され、補充槽２−２には添加剤液２−７が収容され、補充槽２−３には所定濃度のめっき液（例えば所定濃度の硫酸銅を主体とした溶液）２−８が収容されている。添加剤液２−７はポンプ２−９により配管２−１０を通して調整槽２−１に供給されるようになっており、めっき液２−８はポンプ２−１１により配管２−１２を通して調整槽２−１に供給されるようになっている。
【００１７】
調整槽２−１とめっき槽１−２とは配管３及び配管４で接続されており、調整槽２−１のめっき液１−１はポンプ２−１３によりフィルタ２−１４及び配管３を通してめっき槽１−２に送られ、めっき槽１−２のめっき液１−１はポンプ１−１１により配管４を通って調整槽２−１に送られるようになっている。つまり配管３、ポンプ２−１３、フィルタ２−１４、配管４及びポンプ１−１１は、調整槽２−１とめっき槽１−２の間をめっき液１−１を循環させるめっき液循環機構を構成している。
【００１８】
調整槽２−１のめっき液１−１はポンプに２−１５によりめっき液再生装置２−４に送られ、該液再生装置２−４でめっき液１−１中の老かい物の除去及び金属イオン濃度や水素イオン指数等が調整される。該老かい物の除去及び金属イオン濃度や水素イオン指数等が調整されためっき液１−１はポンプ２−１６によりフィルタ２−１７を通って調整槽２−１に送られる。つまり、ポンプ２−１５、ポンプ２−１６及びフィルタ２−１７は調整槽２−１とめっき液再生装置２−４の間をめっき液１−１を循環させる循環機構を構成している。
【００１９】
めっき部１の洗浄水槽１−９の洗浄に使用済みの洗浄水１−７’はポンプ１−１０により配管１−１２を通して管理部２の金属イオン採取器２−５に送られ、該金属イオン採取器２−５で洗浄水１−７’から金属イオン（例えば、Ｃｕ²⁺）を採取（除去）して、該金属イオンを除去した使用済みの洗浄水１−７’を一般排水２−１８として排出する。また、２−１９は温度調節器であり、調整槽２−１のめっき液１−１はポンプ２−２０により該温度調節器２−１９を通って液温が調整され、所定の液温に維持されるようになっている。
【００２０】
また、ポンプ２−１３で調整槽２−１から送り出されためっき液１−１の一部は分析装置２−６に送られ、めっき液の成分及び／又は濃度が分析される。その分析結果に基づいて、ポンプ２−９やポンプ２−１１を起動し、補充槽２−２内の添加剤液２−７や補充槽２−３内のめっき液２−８を調整槽２−１に補充し、調整槽２−１内のめっき液１−１の成分及び／又は濃度を調整するようになっている。
【００２１】
上記構成のめっき装置において、めっき電源１−５から所定値の電圧を印加することにより、溶解性の陽極電極（例えば、含リン銅電極）１−３から放出された金属イオン（例えば、Ｃｕ²⁺）は被めっき基板１−４の表面に付着し、金属めっき膜が形成される。めっき運転の継続と被めっき基板１−４の処理枚数に伴い、めっき液１−１の組成、濃度及びめっき液量が変化する。その変化の状態に応じて、調整槽２−１に補充槽２−２の添加剤液２−７や補充槽２−３のめっき液２−８を補充し、めっき液１−１の組成成分及び濃度を所定の値に維持する。なお、補充槽２−２の添加剤液２−７としては、有機添加剤液（ポリマー、レベラー、キャリア及びＨＣｌの混合溶液）が用いられる。
【００２２】
上記構成のめっき装置のめっき部１をクリーンルーム等のクリーン度の高い第１の部屋に設置し、管理部２をユーティリティルーム等のクリーン度の低い第２の部屋に設置する。これにより、めっき部１の洗浄装置１−６の洗浄水槽１−９中の洗浄に使用済みの洗浄水１−７’はポンプ１−１０により管理部２の金属イオン採取器２−５に送られ、金属イオンが除去され、一般排水２−１８となって排出される。
【００２３】
図２は本発明に係るめっき装置の他の構成例を示す図である。図２において、図１と同一符号を付した部分は同一又は相当部分を示す。本めっき装置が図１に示すめっき装置と異なる点は、管理部２に金属イオン採取器２−５に替えて洗浄水再生装置２−２１を設け、めっき部１のポンプ１−１０により配管１−１２を通して洗浄水槽１−９中の洗浄に使用済みの洗浄水１−７’を該洗浄水再生装置２−２１に送り、該洗浄水再生装置２−２１で洗浄水１−７’中の金属イオン及び異物を除去して洗浄水を再生している点である。そして再生した洗浄水を配管１−１３を通して、めっき部１の洗浄ノズル１−８に供給し、洗浄水１−７として利用する。また、洗浄水再生装置２−２１には必要に応じて純水２−２２が補給される。
【００２４】
図３は金属イオン採取器２−５の構成例を示す図である。金属イオン採取器２−５はｐＨ調整槽１２及びキレート樹脂塔１４を具備し、図１のめっき部１の洗浄水槽１−９の洗浄に使用済みの洗浄水１−７’はポンプ１−１０により配管１−１２を通ってｐＨ調整槽１２に送られ収容される。ここでｐＨ調整槽１２に中和剤が注入され、洗浄水１−７’のｐＨ値が調整される。ｐＨ値が調整された洗浄水１−７’はポンプ１３によりキレート樹脂塔１４に送られる。
【００２５】
洗浄水１−７’がキレート樹脂塔１４を通ると、洗浄水１−７’中に例えば金属イオンとしてＣｕ²⁺イオンが含まれていると、化学反応（Ｒ＝Ｃａ＋Ｃｕ²⁺→Ｒ＝Ｃｕ＋Ｃａ²⁺ 但し、Ｒは官能基を示す）により、Ｃａ²⁺より選択性の強いＣｕ²⁺イオンは該キレート樹脂塔１４のＣａ型キレート樹脂のＣａ²⁺と置き換わり、Ｃｕ²⁺イオンが官能基の末端に吸着し、洗浄水中のＣｕ²⁺イオンが除去される。このようにキレート樹脂塔１４で金属イオンの除去された洗浄水１−７’は一般排水２−１８となって排出される。
【００２６】
図４は洗浄水再生装置２−２１の構成例を示す図である。本洗浄水再生装置２−２１は洗浄排水貯蔵槽２１、界面活性剤塔２２、紫外線殺菌塔２３、アニオン交換樹脂塔２４、カチオン交換樹脂塔２５を具備する。図２のめっき部１の洗浄水槽１−９の洗浄に使用済みの洗浄水１−７’はポンプ１−１０により、配管１−１２を通して洗浄排水貯蔵槽２１に貯留される。
【００２７】
洗浄排水貯蔵槽２１の洗浄水１−７’はポンプ２６はフィルタ２７を通し異物を除去した後、界面活性剤塔２２を通ることにより有機添加の分解物や老かい物を吸着除去してから、紫外線殺菌塔２３を通して雑菌の繁殖を抑え、更にアニオン交換樹脂塔２４とカチオン交換樹脂塔２５を通ることにより、それぞれ洗浄水１−７’陰イオンと陽イオンとを水酸イオンＯＨ⁻と水素イオンＨ^＋とに置き換え、樹水に再生する。この後フィルタ２８を通って異物が除去され、再生された純水となって三方弁２９から配管１−１３を通って、めっき部１の洗浄ノズル１−８に供給される。なお、洗浄排水貯蔵槽２１には必要に応じて、純水３０が開閉弁３１を介して補給される。
【００２８】
図５はめっき液再生装置２−４の構成例を示す図である。めっき液再生装置２−４は界面活性剤塔４１、界面活性剤塔４２、めっき液再生槽４３、添加剤液槽４４、添加剤液槽４５、硫酸銅溶液槽４６、硫酸槽４７及び塩酸槽４８を具備する。図１又は図２の調整槽２−１からの老かい物等を含んだめっき液１−１がフィルタ４９を通過することによって固形パーティクルが除去される。更に特性の異なる界面活性剤塔４１及び４２に通すことによって有機添加剤の分解物等の老かい物が除去される。ここで特性の異なる２つの界面活性剤塔４１及び４２を設ける理由は、有機添加物の分解物や老かい物は分子量の大きいものから小さいものまであり、これを効率良く吸着するためには、複数の種類の界面活性剤塔を必要とするからである。
【００２９】
次に、異なる界面活性剤塔４２を通っためっき液１−１はめっき液再生槽４３に貯留される。めっき液再生槽４３には添加剤液槽４４からポンプ５５により第１の添加剤５０が、添加剤液槽４５からポンプ５６により第２の添加剤５１が、硫酸銅溶液槽４６からポンプ５７により硫酸銅溶液５２が、硫酸槽４７からポンプ５８により硫酸溶液５３が、塩酸槽４８からポンプ５９により塩酸溶液５４がそれぞれ供給されるようになっている。
【００３０】
ここでめっき液を適正な成分組成にするために濃度の高い硫酸銅溶液５２を追加し、銅イオン濃度を適正値にする。そして硫酸溶液５３や塩酸溶液５４を加え、水素イオン指数（ｐＨ値）と塩素イオン濃度を調整する。そして、有機添加剤である第１の添加剤５０、有機添加剤である第２の添加剤５１を加えてめっき液１−１を調整する。調整されためっき液１−１はポンプ２−１６によりフィルタ２−１７を通して調整槽２−１に送られる。なお、めっき再生槽４３には開閉弁６０を介して純水６１が必要に応じて補給されるようになっている。
【００３１】
また、上記例では図１及び図２に示す構成のめっき装置において、めっき部１を設置する第１の部屋をクリーンルームとする例を示したが、クリーンルームに限定されるものではなく、クリーンブース、クリーンベンチ、クリーンボックス等のクリーン度の高い部屋又は領域であればよい。
【００３２】
また、上記図１及び図２に示すめっき装置の構成例では、めっき電源１−５を該めっき部１に設け第１の部屋に設置するように図示しているが、このめっき電源１−５を管理部２が設置されている第２の部屋に設け、ここから給電するように構成してもよい。こうすることにより、めっき電源１−５のメンテナンス作業も管理部２が設置される第２の部屋で行なうことができる。特にめっき電源１−５に蓄電池を用いる場合は、ダーティな蓄電池のメンテナンス作業をクリーン度の低い第２の部屋で行なうことになり、好ましい。
【００３３】
また、上記図１及び図２に示すめっき装置の構成例では、１個のめっき部１に対して１個の管理部を設けるように構成しているが、複数個のめっき部１に対して、１個の管理部２を設け、複数個のめっき部１を第１の部屋に設置し、１個の管理部２を第２の部屋に設け、１個の管理部で複数個のめっき部を管理できるように構成してもよい。
【００３４】
また、上記図１乃至図２に示すめっき装置の構成例では、省略したが、めっき液や電解液等の液の流量を測定するフローメータ、圧力を測定する圧力計、温度計等、メンテナンスを必要とする機器は管理部２の設置されるクリーン度の低い第２の部屋へ設置する。これにより、めっき部１が設置されたクリーン度の高い第１の部屋をこれらのメンテナンスで汚染させる心配がなくなる。
【００３５】
なお、上記実施形態例では被めっき体として、半導体ウエハ等の半導体用の被めっき基板１−４に金属めっき膜を形成する場合を例に説明したが、被めっき体はこれに限定されるものではない。
【００３６】
【発明の効果】
以上説明したように、各請求項に記載の発明によれば、管理部にめっき液の成分及び／又は濃度を調整する調整槽、該調整槽にめっき液及び補充剤液を注入する補充機構、該調整槽のめっき液の一部を抽出して該めっき液の成分分析又は／及び濃度測定をする分析装置、洗浄装置で被めっき体を洗浄した洗浄液中に含まれる金属イオンを取り除いて一般排水とする装置、一般排水を排出する排水機構を具備し、めっき部と管理部をそれぞれ別々の部屋に設置できるように別体として構成し、管理部の調整槽とめっき部のめっき槽を配管で接続し、該調整槽からめっき部へ、めっき部から調整槽にめっき液を循環させる液循環機構を設け、めっき部を管理部が設置された第２の部屋よりクリーン度の高い第１の部屋に設置したので、下記のような優れた効果が得られる。
【００３７】
（１）洗浄処理からなる自己完結的な専用処理機能を有することにより、排水処理を効率的に行うことができる。
【００３８】
（２）めっき装置の殆どのメンテナンス作業を管理部が設置されているクリーン度の低い第２の部屋で行うことができ、メンテナンス作業効率が向上すると共にめっき部が設置されているクリーン度の高い第１の部屋の汚染を防止できる。
【図面の簡単な説明】
【図１】本発明に係るめっき装置の構成例を示す図である。
【図２】本発明に係るめっき装置の構成例を示す図である。
【図３】金属イオン採取器の構成例を示す図である。
【図４】洗浄水再生装置の構成例を示す図である。
【図５】めっき液再生装置の構成例を示す図である。
【図６】従来のめっき装置の構成例を示す図である。
【符号の説明】
１めっき部
１−１めっき液
１−２めっき槽
１−３陽極電極
１−４被めっき基板
１−５めっき電源
１−６洗浄装置
１−７洗浄水
１−８洗浄ノズル
１−９洗浄水槽
１−１０ポンプ
１−１１ポンプ
２管理部
２−１調整槽
２−２補充槽
２−３補充槽
２−４めっき液再生装置
２−５金属イオン採取器
２−６分析装置
２−７添加剤液
２−８めっき液
２−９ポンプ
２−１１ポンプ
２−１３ポンプ
２−１４フィルタ
２−１５ポンプ
２−１６ポンプ
２−１７フィルタ
２−１８一般排水
２−１９温度調節器
２−２０ポンプ
２−２１洗浄水再生装置
２−２２純水
１１
１２ｐＨ調整槽
１３ポンプ
１４キレート樹脂塔
２１洗浄排水貯蔵槽
２２界面活性剤塔
２３紫外線殺菌塔
２４アニオン交換樹脂塔
２５カチオン交換樹脂塔
２６ポンプ
２７フィルタ
２８フィルタ
２９三方弁
３０純水
３１開閉弁
４１界面活性剤塔
４２界面活性剤塔
４３めっき液再生槽
４４添加剤液槽
４５添加剤液槽
４６硫酸銅溶液槽
４７硫酸槽
４８塩酸槽
４９フィルタ
５０第１の添加剤
５１第２の添加剤
５２硫酸銅溶液
５３硫酸溶液
５４塩酸溶液
５５ポンプ
５６ポンプ
５７ポンプ
５８ポンプ
５９ポンプ
６０開閉弁
６１純水[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plating apparatus, and more particularly, to a plating apparatus having a metal ion removing function for removing metal ions contained in a cleaning solution for cleaning an object to be plated to obtain general waste water .
[0002]
[Prior art]
In the semiconductor manufacturing process, the plating process is frequently used for wiring or for attaching a film. FIG. 6 is a diagram showing the configuration of this type of conventional plating apparatus. As shown in the figure, the plating apparatus is composed of a plating unit 1 and a management unit 2. The plating unit 1 is provided with a plating tank 1-2, and the management unit 2 is provided with a replenishment tank 2-2 and a replenishment tank 2-3. Yes.
[0003]
A plating bath 1-1 is accommodated in the plating tank 1-2, and the substrate to be plated 1-4 mounted on a jig and the anode electrode (solubility) 1-3 are opposed to each other in the plating solution 1-1. A plating power source 1-5 is connected between the substrate to be plated 1-4 and the anode electrode 1-3. Further, a pump 1-14 and a temperature controller 1-15 are provided, and the plating solution 1-1 is sent to the temperature controller 1-15 by the pump 1-14, and the temperature controller 1-15 performs plating. It is adjusted to the optimum liquid temperature and returned to the plating tank 1-2.
[0004]
The replenishing tank 2-3 contains a plating solution 2-8 having a predetermined concentration (for example, a solution mainly composed of a predetermined concentration of copper sulfate) 2-8. The plating solution 2-8 is supplied to the plating tank 1 through the pipe 3 by the pump 2-11. -2 is supplied to the replenishing tank 2-2, and the additive liquid 2-7 is accommodated in the replenishing tank 2-2 and supplied to the plating tank 1-2 through the pipe 4 by the pump 2-9. Yes. During operation, the composition and concentration of the plating solution 1-1 in the plating tank 1-2 are analyzed by an analysis device (not shown), and the replenishing tank 2-2 and the replenishing tank are maintained so that the composition and concentration are maintained at predetermined values. From 2-3, the additive solution 2-7 and the plating solution 2-8 are supplied to the plating tank 1-2.
[0005]
When a plating current is applied from the plating power source 1-5 between the substrate to be plated 1-4 and the anode electrode 1-3, metal ions released from the soluble anode electrode (for example, phosphorous-containing copper electrode) 1-3 ( For example, Cu ²⁺ ) adheres to the surface of the substrate to be plated 1-4, and a metal plating film is formed. Since the anode electrode 1-3 is exhausted by releasing metal ions into the plating solution 1-1, it is necessary to periodically replace the anode electrode 1-3.
[0006]
In the plating apparatus having the above-described configuration, a large amount of cleaning water is discharged to clean the plated substrate 1-4 after plating. In particular, when the substrate to be plated 1-4 is a semiconductor substrate such as a semiconductor wafer, a large amount of cleaning water or pure water is consumed. In addition, since the cleaning water contains a plating solution, it requires a treatment such as removal of metal ions, which places a heavy burden on the wastewater treatment facility. The same can be said for the case where the plating solution waste solution is processed due to the deterioration of the plating solution.
[0007]
Therefore, giving the plating equipment a cleaning water treatment function and a plating waste liquid regeneration function, and a self-contained dedicated treatment function for the treatment of the plating solution and the solution containing the plating solution, in consideration of reducing the load on general equipment. This is an efficient method. At this time, cleanliness is required for the plating solution adjustment function that adjusts and manages the plating solution, the metal ion removal function that removes metal ions from the cleaning water used for cleaning, and the plating solution regeneration function that reconditions and regenerates the plating waste solution. Although there is a significant merit in terms of maintenance, installing the plating unit in a room different from the room where the plating unit 1 is installed and performing the treatment of the plating solution, the treatment of the plating solution, and the cleaning water have been in the past. An answering plating system has not been developed.
[0008]
[Problems to be solved by the invention]
The present invention has been made in view of the above points, and has a plating water treatment function, a plating waste liquid regeneration function, a plating solution and a dedicated treatment function that is self-contained for the treatment of a solution containing a plating solution, and An object of the present invention is to provide a plating apparatus that is efficient and suitable for maintenance by performing these functions in a room different from a room in which a plating unit requiring cleanliness is installed.
[0009]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, the invention according to claim 1 is a plating apparatus comprising a plating unit that performs plating on an object to be plated, and a management unit that adjusts a plating solution and a solution containing a plating solution. A plating tank for containing the plating solution and arranging the object to be plated as the anode electrode and the cathode facing each other and plating, and a cleaning device for cleaning the object to be plated after plating, the management unit includes the components of the plating solution and Adjusting tank for adjusting concentration, replenishment mechanism for injecting plating solution and replenisher solution into adjusting tank, extracting part of plating solution in adjusting tank and analyzing component or / and measuring concentration of plating solution analyzer, apparatus for general waste water to remove the metal ions contained in the washing solution washing the plated body with cleaning device, comprising a flush mechanism for discharging the general drainage, by the managing unit and the plating portion respectively to Configured as separate bodies so as to be installed in a room, a plating tank of the adjustment tank and the plating unit of the management unit are connected to one another through pipes, the plating unit from the conditioning tank, liquid circulating plating solution adjustment tank from the plating unit A circulation mechanism is provided, and the plating unit is installed in the first room having a higher degree of cleanliness than the second room in which the management unit is installed.
[0010]
As described above, adjustment tank for adjusting the components and / or concentration of the plating solution to the management unit, replenishing mechanism for injecting the plating solution and the replenisher solution to the conditioning tank, to extract a portion of the plating solution of the conditioning tank Analyzing device for component analysis or / and concentration measurement of the plating solution, device for removing the metal ions contained in the cleaning solution for cleaning the object to be plated by the cleaning device , and draining mechanism for discharging the general waste water Comprising, as a separate unit so that the plating part and the management part can be installed in separate rooms , connecting the adjustment tank of the management part and the plating tank of the plating part by piping, from the adjustment tank to the plating part, Since there is a liquid circulation mechanism that circulates the plating solution from the plating unit to the adjustment tank, and the plating unit is installed in the first room with a higher degree of cleanliness than the second room in which the management unit is installed, washing water treatment and plating waste liquid Regeneration, plating solution and Made it with a self-contained dedicated processing functions consists of processing of liquid, including Tsu Ki liquid. Accordingly, these processes can be performed efficiently, and at the same time, most of the maintenance work of the plating apparatus can be performed in the second room with a low degree of cleanliness where the management unit is installed. Contamination of the first room having a high degree of cleanliness where the section is installed can be prevented.
[0011]
The invention according to claim 2 is characterized in that, in the plating apparatus according to claim 1, the first room is a clean room, and the second room is a utility room having a lower cleanness than the clean room. To do.
[0012]
Further, the invention according to claim 3 is the plating apparatus according to claim 1 or 2, wherein there are a plurality of plating units installed in the first room, whereas the management is installed in the second room. The number of parts is one.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a configuration example of a plating apparatus according to the present invention. In FIG. 1, the same reference numerals as those in FIG. 6 denote the same or corresponding parts. The plating apparatus includes a plating unit 1 and a management unit 2 as illustrated.
[0014]
The plating unit 1 is provided with a plating tank 1-2 and a cleaning device 1-6. A plating solution 1-1 is accommodated in the plating tank 1-2, and a substrate to be plated (for example, a semiconductor wafer) 1 mounted on a jig serving as an anode 1-3 and a cathode in the plating solution 1-1. -4 are arranged to face each other. A plating power source 1-5 is connected between the anode electrode 1-3 and the substrate to be plated 1-4, and a plating current is supplied from the plating power source 1-5 to the anode electrode 1-3 and the substrate to be plated 1-4. By energizing, a metal plating film (for example, a copper plating film) is formed on the surface of the substrate to be plated 1-4.
[0015]
The cleaning device 1-6 is a device for cleaning the plated substrate 1-4 ′ after plating, and sprays cleaning water (for example, pure water) 1-7 toward the plated substrate 1-4 ′ after plating. Cleaning nozzle 1-8, cleaning water tank 1-9 for receiving and storing used cleaning water 1-7 'sprayed from the cleaning nozzle 1-8, and cleaning of the cleaning water tank 1-9 A pump 1-10 for sending water 1-7 ′ to the management unit 2 is provided.
[0016]
The management unit 2 includes an adjusting tank 2-1, a replenishing tank 2-2, a replenishing tank 2-3, a plating solution regenerating apparatus 2-4, a metal ion collector 2-5, and an analyzing apparatus 2-6. The adjustment tank 2-1 contains the adjusted plating solution 1-1, the replenishment tank 2-2 contains the additive solution 2-7, and the replenishment tank 2-3 has a predetermined concentration of plating solution (for example, 2-8) containing a solution mainly composed of copper sulfate of a predetermined concentration. The additive liquid 2-7 is supplied to the adjustment tank 2-1 through the pipe 2-10 by the pump 2-9, and the plating liquid 2-8 is supplied to the adjustment tank through the pipe 2-12 by the pump 2-11. 2-1.
[0017]
The adjustment tank 2-1 and the plating tank 1-2 are connected by the pipe 3 and the pipe 4, and the plating solution 1-1 in the adjustment tank 2-1 is plated through the filter 2-14 and the pipe 3 by the pump 2-13. It is sent to the tank 1-2, and the plating solution 1-1 of the plating tank 1-2 is sent to the adjustment tank 2-1 through the pipe 4 by the pump 1-11. That is, the piping 3, the pump 2-13, the filter 2-14, the piping 4, and the pump 1-11 have a plating solution circulation mechanism that circulates the plating solution 1-1 between the adjustment tank 2-1 and the plating tank 1-2. It is composed.
[0018]
The plating solution 1-1 in the adjustment tank 2-1 is sent to the plating solution regenerating device 2-4 by a pump 2-15, and the solution regenerating device 2-4 removes the old matter in the plating solution 1-1. Metal ion concentration, hydrogen ion index, etc. are adjusted. The plating solution 1-1 in which the removal of the old material and the metal ion concentration, the hydrogen ion index, etc. are adjusted is sent to the adjusting tank 2-1 through the filter 2-17 by the pump 2-16. That is, the pump 2-15, the pump 2-16, and the filter 2-17 constitute a circulation mechanism that circulates the plating solution 1-1 between the adjusting tank 2-1 and the plating solution regenerator 2-4.
[0019]
Washing water 1-7 ′ used for washing the washing water tank 1-9 of the plating unit 1 is sent to the metal ion collector 2-5 of the management unit 2 through the pipe 1-12 by the pump 1-10. Metal ions (for example, Cu ²⁺ ) are collected (removed) from the washing water 1-7 ′ by the collector 2-5, and the used washing water 1-7 ′ from which the metal ions have been removed is removed from the general waste water 2- 18 is discharged. Reference numeral 2-19 denotes a temperature controller, and the plating solution 1-1 in the adjusting tank 2-1 is adjusted by the pump 2-20 through the temperature controller 2-19, so that the liquid temperature is adjusted to a predetermined temperature. To be maintained.
[0020]
A part of the plating solution 1-1 sent out from the adjustment tank 2-1 by the pump 2-13 is sent to the analyzer 2-6, and the components and / or concentrations of the plating solution are analyzed. Based on the analysis result, the pump 2-9 and the pump 2-11 are started, and the additive solution 2-7 in the replenishing tank 2-2 and the plating solution 2-8 in the replenishing tank 2-3 are adjusted to the adjusting tank 2. -1 is replenished to adjust the component and / or concentration of the plating solution 1-1 in the adjustment tank 2-1.
[0021]
In the plating apparatus having the above configuration, by applying a voltage of a predetermined value from the plating power source 1-5, metal ions (for example, Cu ² ) released from the soluble anode electrode (for example, phosphorous-containing copper electrode) 1-3. ⁺ ) Adheres to the surface of the substrate to be plated 1-4 to form a metal plating film. With the continuation of the plating operation and the number of processed substrates 1-4, the composition, concentration, and amount of the plating solution 1-1 change. According to the state of the change, the adjustment tank 2-1 is supplemented with the additive liquid 2-7 in the replenishing tank 2-2 or the plating liquid 2-8 in the replenishing tank 2-3, and the composition component of the plating liquid 1-1. And maintain the concentration at a predetermined value. In addition, as the additive liquid 2-7 of the replenishing tank 2-2, an organic additive liquid (a mixed solution of polymer, leveler, carrier and HCl) is used.
[0022]
The plating unit 1 of the plating apparatus having the above-described configuration is installed in a first room with a high degree of cleanness such as a clean room, and the management unit 2 is installed in a second room with a low degree of cleanness such as a utility room. As a result, the cleaning water 1-7 ′ used for cleaning in the cleaning water tank 1-9 of the cleaning device 1-6 of the plating unit 1 is sent to the metal ion collector 2-5 of the management unit 2 by the pump 1-10. The metal ions are removed and discharged as general wastewater 2-18.
[0023]
FIG. 2 is a view showing another configuration example of the plating apparatus according to the present invention. 2, the same reference numerals as those in FIG. 1 denote the same or corresponding parts. The present plating apparatus is different from the plating apparatus shown in FIG. 1 in that a cleaning water regeneration device 2-21 is provided in the management unit 2 in place of the metal ion collector 2-5, and the piping 1 is provided by a pump 1-10 of the plating unit 1. -12 is used to send the cleaning water 1-7 ′ used for cleaning in the cleaning water tank 1-9 to the cleaning water regenerator 2-21. The cleaning water is regenerated by removing metal ions and foreign matters. Then, the regenerated cleaning water is supplied to the cleaning nozzle 1-8 of the plating unit 1 through the pipe 1-13 and used as the cleaning water 1-7. The cleaning water regenerator 2-21 is replenished with pure water 2-22 as necessary.
[0024]
FIG. 3 is a diagram illustrating a configuration example of the metal ion collector 2-5. The metal ion collector 2-5 includes a pH adjusting tank 12 and a chelate resin tower 14, and the cleaning water 1-7 ′ used for cleaning the cleaning water tank 1-9 of the plating unit 1 in FIG. Is sent to and stored in the pH adjusting tank 12 through the pipe 1-12. Here, a neutralizing agent is injected into the pH adjusting tank 12 to adjust the pH value of the washing water 1-7 ′. The washing water 1-7 ′ having the adjusted pH value is sent to the chelate resin tower 14 by the pump 13.
[0025]
When the washing water 1-7 ′ passes through the chelate resin tower 14, if the washing water 1-7 ′ contains, for example, Cu ²⁺ ions as metal ions, a chemical reaction (R = Ca + Cu ²⁺ → R = Cu + Ca). ²⁺ Here, R is a represents a functional group), a strong Cu ²⁺ ion selective than Ca ²⁺ is replaced with Ca ²⁺ of Ca-type chelate resin of the chelate resin tower 14, Cu ²⁺ ions functional group The Cu ²⁺ ions in the washing water are removed. Thus, the washing water 1-7 ′ from which the metal ions have been removed by the chelate resin tower 14 is discharged as general drainage 2-18.
[0026]
FIG. 4 is a diagram illustrating a configuration example of the washing water regenerating apparatus 2-21. The cleaning water regenerating apparatus 2-21 includes a cleaning waste water storage tank 21, a surfactant tower 22, an ultraviolet sterilization tower 23, an anion exchange resin tower 24, and a cation exchange resin tower 25. The washing water 1-7 ′ used for washing the washing water tank 1-9 of the plating unit 1 in FIG. 2 is stored in the washing drainage storage tank 21 through the pipe 1-12 by the pump 1-10.
[0027]
The washing water 1-7 ′ in the washing waste water storage tank 21 is removed from the pump 26 through the filter 27 and then removed from the foreign matter. By suppressing the propagation of various bacteria through the ultraviolet sterilization tower 23 and further passing through the anion exchange resin tower 24 and the cation exchange resin tower 25, the washing water 1-7 ′ anion and cation are converted into hydroxide ion OH ⁻ and hydrogen, respectively. Replace with ion H ⁺ and regenerate into tree water. Thereafter, foreign matters are removed through the filter 28, and regenerated pure water is supplied from the three-way valve 29 to the cleaning nozzle 1-8 of the plating section 1 through the pipe 1-13. In addition, the pure water 30 is replenished to the washing waste water storage tank 21 through the on-off valve 31 as necessary.
[0028]
FIG. 5 is a diagram illustrating a configuration example of the plating solution regenerating apparatus 2-4. The plating solution regenerating apparatus 2-4 includes a surfactant tower 41, a surfactant tower 42, a plating solution regeneration tank 43, an additive liquid tank 44, an additive liquid tank 45, a copper sulfate solution tank 46, a sulfuric acid tank 47, and a hydrochloric acid tank. 48. The solid particles are removed by passing the plating solution 1-1 including the old material from the adjustment tank 2-1 in FIG. Further, old substances such as decomposition products of the organic additive are removed by passing through the surfactant towers 41 and 42 having different characteristics. The reason why the two surfactant towers 41 and 42 having different characteristics are provided here is that the decomposition product and the old product of the organic additive have a large molecular weight to a small one. In order to efficiently adsorb this, This is because a plurality of types of surfactant towers are required.
[0029]
Next, the plating solution 1-1 that has passed through the different surfactant tower 42 is stored in the plating solution regeneration tank 43. In the plating solution regeneration tank 43, the first additive 50 is supplied from the additive liquid tank 44 by the pump 55, the second additive 51 is supplied from the additive liquid tank 45 to the pump 56, and the copper sulfate solution tank 46 is supplied from the pump 57. The copper sulfate solution 52 is supplied from the sulfuric acid tank 47 by the pump 58 and the hydrochloric acid solution 54 from the hydrochloric acid tank 48 by the pump 59.
[0030]
Here, in order to make the plating solution have an appropriate component composition, a copper sulfate solution 52 having a high concentration is added to adjust the copper ion concentration to an appropriate value. Then, a sulfuric acid solution 53 and a hydrochloric acid solution 54 are added to adjust the hydrogen ion index (pH value) and the chlorine ion concentration. And the 1st additive 50 which is an organic additive, and the 2nd additive 51 which is an organic additive are added, and the plating solution 1-1 is adjusted. The adjusted plating solution 1-1 is sent to the adjustment tank 2-1 through the filter 2-17 by the pump 2-16. The plating regeneration tank 43 is supplied with pure water 61 via an on-off valve 60 as necessary.
[0031]
In the above example, in the plating apparatus having the configuration shown in FIGS. 1 and 2, an example in which the first room in which the plating unit 1 is installed is a clean room is not limited to a clean room, a clean booth, Any room or area with a high degree of cleanness such as a clean bench or a clean box may be used.
[0032]
Further, in the configuration example of the plating apparatus shown in FIG. 1 and FIG. 2, the plating power source 1-5 is illustrated as being provided in the plating unit 1 and installed in the first room. May be provided in a second room in which the management unit 2 is installed, and power may be supplied from here. By doing so, the maintenance work of the plating power source 1-5 can also be performed in the second room in which the management unit 2 is installed. In particular, when a storage battery is used for the plating power source 1-5, the maintenance work of the dirty storage battery is performed in the second room with a low cleanliness, which is preferable.
[0033]
Further, in the configuration example of the plating apparatus shown in FIG. 1 and FIG. 2, one management unit is provided for one plating unit 1, but for a plurality of plating units 1. One management unit 2 is provided, a plurality of plating units 1 are installed in the first room, one management unit 2 is provided in the second room, and one management unit is provided with a plurality of plating units. You may comprise so that it can manage.
[0034]
Although omitted in the configuration examples of the plating apparatus shown in FIGS. 1 and 2, maintenance such as a flow meter for measuring the flow rate of a plating solution or an electrolytic solution, a pressure gauge for measuring pressure, a thermometer, etc. is performed. Necessary equipment is installed in the second room where the management unit 2 is installed and the degree of cleanliness is low. Thereby, there is no worry that the first room having a high degree of cleanliness where the plating unit 1 is installed is contaminated by these maintenances.
[0035]
In the above embodiment, the case where a metal plating film is formed on a substrate to be plated 1-4 for a semiconductor such as a semiconductor wafer has been described as an example. However, the object to be plated is limited to this. is not.
[0036]
【The invention's effect】
As described above, according to the invention described in the claims, adjustment tank for adjusting the components and / or concentration of the plating solution to the management unit, replenishing mechanism for injecting the plating solution and the replenisher solution to the conditioning tank, General drainage by removing a part of the plating solution in the adjustment tank and removing the metal ions contained in the cleaning solution for cleaning the object to be plated with the cleaning device and analyzing the component or / and measuring the concentration of the plating solution It has a drainage mechanism that discharges general wastewater, and is configured as a separate unit so that the plating part and the management part can be installed in separate rooms, and the adjustment tank of the management part and the plating tank of the plating part are connected by piping. A first chamber having a higher degree of cleanliness than the second chamber in which the management section is installed, provided with a liquid circulation mechanism for connecting and circulating the plating solution from the adjustment tank to the plating section and from the plating section to the adjustment tank. Since it was installed in Excellent effect can be obtained.
[0037]
(1) Ri by have a self-contained dedicated processing functions consisting of cleaning, the waste water treatment can be efficiently line Ukoto.
[0038]
(2) most of the maintenance work of the plating apparatus can be carried out in the second chamber a low cleanliness management unit is installed, high cleanliness plating portion is Ru Tei is installed with improved maintenance work efficiency Contamination of the first room can be prevented.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration example of a plating apparatus according to the present invention.
FIG. 2 is a diagram showing a configuration example of a plating apparatus according to the present invention.
FIG. 3 is a diagram showing a configuration example of a metal ion collector.
FIG. 4 is a diagram illustrating a configuration example of a cleaning water recycling apparatus.
FIG. 5 is a diagram showing a configuration example of a plating solution regenerating apparatus.
FIG. 6 is a diagram showing a configuration example of a conventional plating apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Plating part 1-1 Plating solution 1-2 Plating tank 1-3 Anode electrode 1-4 Substrate to be plated 1-5 Plating power source 1-6 Cleaning device 1-7 Cleaning water 1-8 Cleaning nozzle 1-9 Cleaning water tank 1 -10 Pump 1-11 Pump 2 Manager 2-1 Adjustment tank 2-2 Replenishment tank 2-3 Replenishment tank 2-4 Plating solution regenerating device 2-5 Metal ion collector 2-6 Analyzer 2-7 Additive solution 2-8 Plating solution 2-9 Pump 2-11 Pump 2-13 Pump 2-14 Filter 2-15 Pump 2-16 Pump 2-16 Pump 2-17 Filter 2-18 General drainage 2-19 Temperature controller 2-20 Pump 2- 21 Washing water recycling device 2-22 Pure water 11
12 pH adjustment tank 13 Pump 14 Chelate resin tower 21 Washing waste water storage tank 22 Surfactant tower 23 UV sterilization tower 24 Anion exchange resin tower 25 Cation exchange resin tower 26 Pump 27 Filter 28 Filter 29 Three-way valve 30 Pure water 31 On-off valve 41 Surfactant tower 42 Surfactant tower 43 Plating solution regeneration tank 44 Additive liquid tank 45 Additive liquid tank 46 Copper sulfate solution tank 47 Sulfuric acid tank 48 Hydrochloric acid tank 49 Filter 50 First additive 51 Second additive 52 Copper sulfate solution 53 Sulfuric acid solution 54 Hydrochloric acid solution 55 Pump 56 Pump 57 Pump 58 Pump 59 Pump 60 On-off valve 61 Pure water

Claims

In a plating apparatus composed of a plating section that performs plating on the object to be plated and a management section that adjusts a plating solution and a solution containing the plating solution,
The plating unit contains a plating solution, and includes a plating tank for performing plating by arranging the object to be plated as an anode electrode and a cathode, and a cleaning device for cleaning the object to be plated after plating.
The management unit adjusts the composition and / or concentration of a plating solution, a replenishment mechanism that injects a plating solution and a replenisher solution into the adjustment vessel, extracts a part of the plating solution in the adjustment vessel, and extracts the plating solution. An analysis device for analyzing the component or / and measuring the concentration, a device for removing the metal ions contained in the cleaning solution for cleaning the object to be plated by the cleaning device , and making the general waste water, a drainage mechanism for discharging the general waste water And
The plating part and the management part are configured as separate bodies so that they can be installed in separate rooms, and the adjustment tank of the management part and the plating tank of the plating part are connected by piping, from the adjustment tank to the plating part, A liquid circulation mechanism that circulates the plating solution from the plating part to the adjustment tank is provided.
The plating apparatus, wherein the plating unit is installed in a first room having a higher degree of cleanliness than a second room in which the management unit is installed.

The plating apparatus according to claim 1,
The plating apparatus according to claim 1, wherein the first room is a clean room, and the second room is a utility room having a lower degree of cleanness than the clean room.

In the plating apparatus according to claim 1 or 2,
The plating apparatus according to claim 1, wherein there are a plurality of plating units installed in the first room, but one management unit is installed in the second room.