JP3962778B2 - Electron beam detector, electron beam writing method and electron beam writing apparatus using the same - Google Patents

Description

  The present invention relates to an electron beam drawing technique used for processing and drawing of a semiconductor integrated circuit and the like.

  A semiconductor integrated circuit represented by an LSI is rapidly increasing in density and integration, and accordingly, a circuit pattern to be formed is rapidly miniaturized. In particular, pattern formation of 100 nm node or less is considered to be very difficult by extension of conventional optical lithography.

  On the other hand, electron beam drawing is an effective means for forming a fine pattern. However, in order to apply to mass production, higher drawing speed improvement is required while maintaining high drawing accuracy.

  In recent years, two major methods have been researched and developed as means for improving the drawing speed of electron beam drawing. The first method is a method of forming a pattern by reducing projection or proximity irradiation of an electron beam using a stencil mask. Although this method can be expected to have a high throughput, it is expected that the mask fabrication is difficult and costly. The second method is a method of performing drawing at the same time using a plurality of point beams and variable rectangular beams, which is a conventional electron beam drawing method. Here, one electron beam is assigned to one electron optical system consisting of an electron lens and a deflector, a multi-column system using a plurality of the electron optical systems, and a multi-beam system using a plurality of beams through one electron optical system. It is defined as a method.

  As multi-beam electron beam drawing, for example, there is a method described in JP-A-9-245708. An electron beam radiated from one electron source is formed into a parallel beam by a condenser lens, and is divided into a plurality of electron beams by an aperture array. From this beam, an intermediate image is formed by a lens array and a deflector array, on / off is controlled independently by a blanking array, and then drawing is performed by projecting the intermediate image onto a sample by a projection optical system including a deflector. This method can preliminarily correct curvature of field and distortion generated in the projection optical system by the lens array and deflector array, and the design of the projection optical system becomes easy, so high resolution and high throughput can be achieved. It is an epoch-making method to realize.

  Regardless of which drawing method is used, in order to perform drawing, it is necessary to measure the beam profile in advance before drawing, and to feed back the obtained results to beam control (referred to as beam calibration). It is. Here, the profile refers to blur due to aberration of the electron optical system, blur due to deviation of focus or astigmatism, distortion, beam position, beam intensity, and the like. In order to improve the drawing accuracy, it is essential to accurately measure these at the stage of adjusting the optical system and also when determining the change in profile due to deflection.

  For high-precision measurement of the beam profile, for example, a method using transmitted electrons is effective as described in JP-A-6-275500. As an application of transmission electron detection, there is one described in Japanese Patent Application Laid-Open No. 2002-110533, for example, which is applied to the multi-column system.

Japanese Patent Laid-Open No. 9-245708

JP-A-6-275500 JP 2002-110533 A

  In the multi-column method and multi-beam method, which perform drawing at the same time using multiple electron beams, measuring multiple beam profiles simultaneously is effective in reducing the total drawing time including beam calibration. It is. Therefore, a plurality of transmission electron detectors for detecting transmission electrons are arranged in the vicinity of the sample to be drawn.

  Most semiconductor electron detectors, so-called photodiodes, effective for detecting transmitted electrons are silicon. For example, the penetration depth when silicon is irradiated with a 50 kV electron beam is about 20 μm. Electrons are scattered in the silicon and penetrate to a depth of about 20 μm. This distance is almost the same in the direction perpendicular to the beam incidence. Therefore, when photodiodes are arranged at intervals of 20 μm or less, when one electron beam is irradiated with an electron beam having a beam diameter less than the size of the photodiode, the electrons scattered in the photodiode enter the adjacent photodiode. To do. As a result, the detection current flows also in the adjacent photodiode, and the electron beam cannot be detected accurately. This means that there is a lower limit to the interval at which the transmission electron detectors are arranged. For example, the multi-beam drawing method has a problem that simultaneous measurement with a beam interval of 20 μm or less cannot be performed.

  The present invention has been made in view of the above points, and provides a transmission electron beam detector that simultaneously measures the profiles of a plurality of adjacent electron beams, and enables high-precision drawing using the same. An object of the present invention is to provide an electron beam lithography technique.

  In order to achieve the above object, the present invention has the following characteristics.

  (1) An electron beam detector of the present invention is provided corresponding to a plurality of aperture marks, means for converting an electron beam that has passed through the plurality of aperture marks into light, and the plurality of aperture marks. A plurality of light detecting elements for detecting the light, and scanning the electron beam on the opening mark to detect the electron beam, and means for converting the electron beam into light. Means for optically separating the converted light is provided between the plurality of light detection elements.

  (2) In the electron beam detector according to (1), the means for optically separating the light includes a transparent member and a separation wall, and all of the light passes through the transparent member and enters the light detection element. Or a part of the light passes through the transparent member and reaches the light detection element, and another part of the light is reflected and absorbed by the separation wall and reaches the light detection element. It is comprised so that it may carry out.

  (3) The electron beam detector of the present invention is provided corresponding to the plurality of aperture marks, means for converting the electron beam that has passed through the plurality of aperture marks into light, and the plurality of aperture marks. A plurality of light detecting elements for detecting the light, and scanning the electron beam on the opening mark to detect the electron beam, and means for converting the electron beam into light. Optical means including an optical lens for focusing the converted light on the light detection elements is provided between the plurality of light detection elements.

  (4) In the electron beam detector according to (1) or (3), the aperture mark is formed of a scatterer and has a diaphragm for limiting electrons scattered by the scatterer. To do.

  (5) The electron beam drawing method of the present invention includes a step of obtaining a beam profile signal from the electron beam detectors of (1) to (4), and an electron optical system of an electron beam drawing apparatus from the obtained beam profile signal. And a step of adjusting the control system, and a step of drawing a pattern using the adjusted electron optical system and the control system.

  (6) An electron beam drawing apparatus according to the present invention comprises the electron beam detectors (1) to (4), and means for adjusting an electron optical system based on a beam profile signal from the electron beam detector; And a means for adjusting a control system based on a beam profile signal from the electron beam detector, and a means for drawing a pattern using the adjusted electron optical system and the control system. .

  According to the present invention, it is possible to realize a transmission electron beam detector that simultaneously measures the profiles of a plurality of adjacent electron beams, and to adjust the electron optical system and the control system of the electron beam drawing apparatus using this detector. Therefore, highly accurate drawing can be performed.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

Example 1
First, the configuration of the electron beam drawing apparatus used in the present invention will be described. FIG. 2 is an example of a multi-beam type electron beam drawing apparatus.

  The electron beam 202 emitted from the electron gun 201 is converted into a substantially parallel electron beam by the condenser lens 203. The electron beam 206 separated by the aperture array 204 forms an electron gun crossover intermediate image 209 in the vicinity of the blanking stop 208 by the lens array 205. The positions of these intermediate images 209 can be individually changed by the alignment deflector 216 driven by the alignment control circuit 220 in the direction perpendicular to the optical axis. The alignment deflectors 216 are two sets of orthogonal deflectors, and can be aligned independently in the X and Y directions.

  Further, by applying a voltage to the blanking array 207, the intermediate image 209 is moved in the direction perpendicular to the optical axis and is blocked by the blanking stop 208, and on / off control can be performed for each separated electron beam 206. .

  These intermediate images 209 are projected onto the sample 217 on the sample stage 218 by the projection optical system including the first projection lens 210 and the second projection lens 214. The projection optical system is driven by the lens control circuit 222 so as to share the back focal position of the first projection lens 210 and the front focal position of the second projection lens 214. This arrangement is called a symmetric magnetic doublet configuration and allows projection with low aberrations.

LaB _{6, which} is most frequently used as an electron source for electron beam drawing, has an electron gun crossover size of about 10 μm. In order to make the beam size on the sample 10 nm, it is necessary to reduce it to 1/1000. Now, assuming that the magnification of the lens array is 1/20, the projection optical system needs a magnification of 1/50. This may be difficult to achieve with a set of projection lenses. At that time, using two sets of projection lenses, for example, the first stage is set to 1/10 and the second stage to 1/5. A projection lens is installed between the blanking stop 208 and the first projection lens 210 shown in FIG. This projection lens also uses a symmetric magnetic doublet configuration.

  At this time, the plurality of electron beams constituting each intermediate image 209 are collectively deflected and positioned by the main deflector 213 and the sub deflector 215. For example, the main deflector 213 uses a wide deflection width, and the sub deflector 215 uses a narrow deflection width. The main deflector 213 is an electromagnetic type, and the sub deflector 215 is an electrostatic type. Defocus caused by deflection aberration generated when the deflector is operated to deflect the beam is corrected by the dynamic focus corrector 211, and deflection astigmatism generated by deflection is corrected by the dynamic astigmatism corrector 212. Both the focus corrector and the astigmatism corrector are composed of coils. These configurations are collectively referred to as an electron optical system.

  Drawing is performed by moving the sample 217 mounted on the sample stage 218. Reference numeral 219 denotes an electron beam detector according to the present invention. The electron beam detector 219 is mounted on the sample stage and positioned in conjunction with a stage control circuit 225 including a coordinate measuring function (not shown) such as a laser interferometer. In addition to measuring the electron beam on the same plane as the sample formed by projecting each intermediate image, it is possible to measure not only on the central axis of the beam but also by measuring the electron beam in synchronization with the deflection. I can do it. The output from the electron beam detector 219 is processed by the signal processing circuit 224 and sent to the CPU 226 to be fed back to electro-optic adjustment and drawing.

  Drawing is performed by synchronizing on / off of the beam by the dose control circuit 221 based on the pattern data stored in the CPU 226 and the deflection operations of the main deflector 213 and the sub deflector 215 driven by the deflection control circuit 223. At this time, the sample stage 218 moves through the stage control circuit 225 by continuous movement or step movement. The CPU 226 controls all of the above series of operations. These parts other than the electron optical system are collectively referred to as a control system.

  Next, the configuration of the electron beam detector of the present invention will be described.

  FIG. 1 is a sectional view of an electron beam detector according to a first embodiment of the present invention.

  The plurality of electron beams 101 for measuring the electron beam detector profile of the present invention are beams A, B, and C, and the interval is 10 μm. All of these electron beams 101 are deflected simultaneously, and scanning is performed on the aperture mark 102 as shown by the arrows in FIG. The opening mark is formed using a metal material (for example, Mo or Si) that can be processed into a desired shape. This mark is a so-called knife edge. If the electron beam is at the opening, it passes downstream, and if it is at the knife edge, it is blocked and does not go downstream.

  Now, the beam C of the electron beam 101 will be described as an example. The electron beam 101 that has passed through the opening of the opening mark 102 is irradiated onto the phosphor 103, and light 105 is generated. The generated light 105 passes through the transparent substrate 104, and only the light that has passed through the separation diaphragm 106 reaches the light detection element 107. The role of the separation diaphragm 106 is to prevent the light 105 from reaching the adjacent light detection element 107. For more precise separation, two separation diaphragms 106 may be installed. The light detection element 107 converts it into a current signal according to the amount of light. This current signal is taken out of the substrate through signal transmission means or wiring (not shown) in the substrate 108. Here, the obtained signal currents are independently separated as signals corresponding to the elements A, B, and C of the light detection element 107 corresponding to the beams A, B, and C of the electron beam 101, respectively. A signal transmission means or wiring is provided so that it can be taken out.

  The phosphor 103 only needs to emit light when irradiated with an electron beam. For example, the transparent substrate 104 may be made of glass and coated thereon. At this time, since the phosphor 103 has a so-called blur (emits light larger than the beam diameter), it is desirable to make it as thin as possible in consideration of beam energy (acceleration voltage) and light emission efficiency. For this reason, it is necessary to select a material having a small particle size and apply it thinly (about several μm) and uniformly. Further, instead of the coating type, a crystal such as YAG may be used. At this time, a transparent substrate having a lattice constant close to that of the crystalline phosphor and a high light transmittance is used.

  The thickness of the transparent substrate 104 needs to be a thickness that blocks the incident electron beam and prevents it from directly entering the light detection element 107. For example, when the transparent substrate is made of glass with an electron beam of 50 kV, the thickness should be several tens of μm or more. If an insulator is used to block the electron beam, charges may accumulate. For this reason, it is effective to use a conductive material or to apply a conductive material to the upper and lower surfaces or one surface of the transparent substrate. Here, a coating-type phosphor was applied to a glass plate with a thickness of 10 μm.

  Next, FIG. 3 shows a top view of the aperture mark and separation diaphragm. An opening mark 301 illustrated in FIG. 3A is a single substrate in which an opening 302 is formed. Although an L-shaped opening is illustrated here, it may be a cross or a rectangle. The purpose is that a knife edge is formed in two directions of X and Y for one electron beam. The opening mark 102 shown in FIG. 1 is a cross section of the broken line part of the opening mark 301 shown in FIG. In this embodiment, the silicon substrate having a thickness of 20 μm is patterned by photolithography and dry etching is performed. The same applies to the separation diaphragm 303 shown in FIG. On one separation diaphragm substrate, diaphragm apertures 304 are formed at the same intervals as the mark apertures. The diameter of the stop is determined by the distance and size between the separation stop and the light detection element. In this example, a Mo plate with holes with a diameter of several μm was used. The shape may not be circular, and may be L-shaped, cross-shaped, or rectangular depending on the shape of the opening 302.

  As the light detection element 107, an array of photodiodes was used. An important point in the present invention is to independently extract current signals from a plurality of light detection elements. If the number of elements is as small as about 10, the wiring may be taken out independently. However, if the number of elements is large, a CCD (Charge Coupled Devices) which is a representative of a photodiode array in which photodiodes are arranged may be used. CCDs having a pixel size of 10 μm or less have already been developed and can be applied to the present invention.

  Next, beam profile measurement will be described with reference to FIG. 4 shows the beam A (signal current output of element A), beam B (signal current output of element B), and beam C (signal current output of element C) of FIG. 1 from above. The horizontal axes of the three graphs are common and indicate the beam scanning distance, and the horizontal positions indicate the same distance. The vertical axis indicates the signal current output (here, amplified by an electric circuit) of each photodetecting element as signal intensity (arbitrary unit). Here, the beams A, B, and C are point beams (generally Gaussian beams).

  In either case, the start of scanning (left end) changes from the state where the beam is blocked by the mark (low level signal) to the end of scanning (right end) from the state where the signal passes through the aperture (high level signal). ing. A part in the middle of this change becomes a beam profile by a knife edge. In the graph of the beam A, since it is a point beam, the middle point of the signal intensity (low level and high level) is the center position of the beam A. This position corresponds to the scanning distance Pa point, and it is measured that the center position of the beam A is Pa. Similarly, in the beam B graph, the center position of the beam B is Pb. As described above, since the beams A, B, and C are simultaneously deflected and scanned by one deflector, the difference between Pa and Pb is the difference between the relative positions of the beams A and B. If the distance between the aperture marks corresponding to the beams A and B is measured in advance, the absolute value of the distance between the beams AB can be obtained.

  Further, assuming that the low level of the signal intensity is 0% and the high level is 100%, the intersections of the signal intensity are obtained at the levels of 12% and 88%, and the difference in scanning distance between these points becomes the approximate half width of the beam. . The half width of the beam B is measured as Φb, and similarly the half width of the beam C is measured as Φc. In this case, it can be seen that Φc is larger than Φb and the beam C is blurred. Further, if there is a difference between scanning in the X direction and scanning in the Y direction, it is understood that the beam shape is a so-called astigmatism. For example, if the measurement is repeated by changing the focus and astigmatism of the electron optical system that forms these beams, the dependence on the focus and astigmatism can be obtained.

  Next, a procedure for feeding back the beam profile data obtained by using the electron beam detector of the present embodiment to drawing will be described with reference to FIG. The components of the electron beam drawing apparatus will be described using the reference numerals in FIG.

  The measurement of the beam profile of the present invention is performed at an optimum interval for operating the drawing apparatus. The measurement start of the beam profile is given by a specific time interval, a specific drawing amount (for example, for each wafer processing lot), or an operator (step 1).

  Procedures such as stage movement to the electron beam detector of the present invention and generation of a deflection signal are programmed in advance in the CPU 226 shown in FIG. 2 and automatically executed. The processing of the detection signal is performed by the signal processing circuit 224 shown in FIG. 2, is taken into the CPU 226, and is stored as a measurement result regarding the beam diameter of each beam (step 2).

  The measurement result regarding the beam diameter of each beam obtained here is compared with the design value of the electron optics and the like, and it is determined whether or not it is within an allowable value necessary for drawing (step 3).

  If it is outside the allowable value, the CPU 226 calculates an optimal optical condition, controls the first projection lens 210 and the second projection lens 214 through the lens control circuit 222, and dynamically focuses through the deflection control circuit 223. The electron optical system is adjusted using the corrector 211 and the dynamic astigmatism corrector 212. For example, optimal drawing conditions are set so that the blur between the beams is uniform (step 4).

  After adjusting in step 4, the measurement is performed again in step 2.

  If it is within the allowable value in step 3, the beam position is measured (step 5).

  Individual beam positions are measured to determine whether the beam spacing is within an acceptable value (step 6).

  When the beam interval is different from the design value and deviates from the allowable value, the alignment deflector 216 is adjusted via the alignment control circuit 220 so as to become a specified value. Apart from this, the irradiation amount control circuit 221 is controlled in synchronization with the deflection control circuit 223 so as to shift the drawing pattern data which each beam handles. In this way, the control system can be adjusted to correct the deviation of the beam interval. Further, the alignment deflector and the pattern data shift may be used together (step 7).

  When the measurement of each beam position is within the allowable value, the measurement is finished and drawing is started (step 8).

  By performing drawing after adjusting the electron optical system and control system of the multi-beam drawing apparatus using this electron beam detector, high-speed and high-precision drawing utilizing the features of the multi-beam drawing apparatus can be realized. .

  In the above embodiments, an example of a 3 × 3 (9) array of beams is given, but an electron beam detector of the array may be configured in accordance with the number of beams used in the multi-beam drawing system. Further, for example, three detectors in one row may be configured, and measurement may be performed sequentially while moving the sample stage.

(Example 2)
FIG. 5 shows a second embodiment of the present invention. In this embodiment, a transparent member and a separation wall are used instead of the transparent substrate of the first embodiment shown in FIG.

  A plurality of electron beams 501 for measuring the profile are all deflected simultaneously, and scanning is performed on the aperture mark 502 as shown by the arrows in FIG. The opening mark 502 is the same as that in the first embodiment. The electron beam that has passed through the opening is irradiated onto the phosphor 503, and light 505 is generated. The generated light 505 passes through the transparent member 504 and reaches the light detection element 507. At this time, light emitted at an angle hits the separation wall 506 and is partially reflected, and part of the light enters the separation wall 506 and is absorbed. This principle is explained below.

  Here, an optical fiber in which the transparent member 504 and the separation wall are integrated is used. The transparent member 504 corresponds to the core glass, and the separation wall 506 corresponds to the clad glass. Light having a specific incident angle or less determined by the refractive index of both is pre-reflected and reaches the opposite surface. In this embodiment, an absorber that absorbs light is mixed in the clad glass, so that light having a specific incident angle or more reaches the adjacent core glass to the minimum. A so-called FOP (Fiber Optic Plate) in which the optical fibers are bundled was used. In this embodiment, the phosphor 503 is applied to the end face of the FOP. However, if the transparent member 504 is moved backward with respect to the separation wall 506 to form a recess and the phosphor is embedded in that portion, the adjacent detectors can be connected. Interference is minimized. The current signal converted by the light detection element 507 is taken out through the substrate 508. The subsequent measurement procedure is the same as the procedure shown in FIG. 8 in the first embodiment.

(Example 3)
FIG. 6 shows a third embodiment of the present invention. A plurality of electron beams 601 for measuring the profile are all deflected simultaneously, and scanning is performed on the thin film opening mark 602 as shown by the arrows in FIG. In this embodiment, silicon having a thickness of 2 μm is used for the thin film opening mark 602. In the transmission electron detection method using a knife edge, it is essential to thin a member to be a mark in order to process a minute shape or a knife edge shape with little edge roughness. When the member is thinned, some of the incident electrons pass through the thin film and leak. However, the transmitted electrons have a specific angular distribution due to the interaction with the atoms constituting the member. Such a member is called a scatterer. Here, the scatterer is a structure made of a material that is thinner than the range (depth of penetration) of the irradiated electron beam and that is partially shielded without being completely shielded by the electron beam.

  The electrons transmitted in this way have a specific scattering angle distribution due to the interaction between the structure and the electron beam. For this reason, it has already been demonstrated that the thin film opening mark 602 functions as a knife edge and a sufficient contrast can be obtained by using the scattered electron limiting aperture 610 that limits the electrons 609 scattered by the thin film opening mark 602. The scattered electron limiting aperture 610 has a thickness sufficient to block scattered electrons. Electrons that pass through the opening of the thin film opening mark 602 or scattered by the thin film opening mark 602 are irradiated to the phosphor 603, and light 605 is generated. The generated light 605 passes through the transparent substrate 604, and only the light that has passed through the separation diaphragm 606 reaches the light detection element 607. The current signal converted by the light detection element 607 is taken out through the substrate 608. The subsequent measurement procedure is the same as the procedure shown in FIG. 8 in the first embodiment.

Example 4
FIG. 7 shows a fourth embodiment of the present invention. A plurality of electron beams 701 for measuring profiles are all deflected simultaneously, and scanning is performed on the opening mark 702 as shown by the arrows in FIG. The opening mark 702 is the same as in the first embodiment. The electron beam that has passed through the opening is irradiated onto the phosphor 703 to generate light 705. The generated light 705 passes through the transparent member 704 and reaches the light detection element 707 via the optical lens 709 which is an optical means. At this time, the light generated on the phosphor 703 spreads at an angle, but is converged by the optical lens 709 and reaches the light detection element 707. For this reason, the light generated on the phosphor 703 by each electron beam forms an image on each light detection element 707 without interference. The current signal converted by the light detection element 707 is taken out through the substrate 708. The subsequent measurement procedure is the same as the procedure shown in FIG. 8 in the first embodiment.

  The optical aperture angle (NA) can be limited by inserting a stop (not shown) having an aperture in the vicinity of the front stage or the rear stage of the optical lens 709. In the optical lens 709 shown in FIG. 7, the projection magnification is approximately 1, but the distance between the optical lens 709 and the light detection element 707 may be increased to be used as an enlargement optical system. At this time, if there is an arrangement restriction on the sample stage of the electron beam drawing apparatus, the optical path may be bent once using an optical means such as a mirror or a prism. Further, it is not necessary to completely focus the light detection element 707 by the optical lens 709, and the light may be blurred to the extent that it does not cover the adjacent light detection element.

  In the present invention, the combination of the embodiments described above may be changed. For example, the thin film aperture mark and the scattered electron limiting aperture using the scatterer shown in FIG. 6 may be applied to the second and fourth embodiments shown in FIG. 5 and FIG.

  As described above, according to the present invention, a transmission electron beam detector can be configured even at a beam interval of 20 μm or less, and a plurality of beam profiles can be measured simultaneously by using this, whereby a plurality of electron beams can be measured. It is possible to realize an electron beam drawing technique that enables drawing at once using the.

The figure explaining the 1st Example of this invention. The figure which shows an example of the electron beam drawing apparatus of a multi-beam system. The top view which shows the aperture mark and separation aperture_diaphragm | restriction in this invention. The figure which shows the beam profile measurement by this invention. The figure explaining the 2nd Example of this invention. The figure explaining the 3rd Example of this invention. The figure explaining the 4th Example of this invention. The figure which shows the procedure which feeds back the beam profile data in drawing in drawing.

Explanation of symbols

101 ... Electron beam, 102 ... Opening mark, 103 ... Phosphor, 104 ... Transparent substrate,
DESCRIPTION OF SYMBOLS 105 ... Light, 106 ... Separation stop, 107 ... Photodetection element, 108 ... Substrate, 201 ... Electron gun, 202 ... Electron beam, 203 ... Condenser lens, 204 ... Aperture array, 205 ... Lens array, 206 ... Separated electron Beam, 207 ... Blanking array, 208 ... Blanking stop, 209 ... Intermediate image, 210 ... First projection lens, 211 ... Dynamic focus corrector, 212 ... Dynamic astigmatism corrector, 213 ... Main deflector, 214 ... second projection lens, 215 ... sub deflector, 216 ... alignment deflector, 217 ... sample, 218 ... sample stage, 219 ... electron beam detector, 220 ... alignment control circuit, 221 ... irradiation dose control circuit, 222 ... lens Control circuit, 223 ... deflection control circuit, 224 ... signal processing circuit, 225 ... stage control circuit, 226 ... CPU, 30 ...... Opening mark, 302, opening, 303, separation aperture, 304, aperture opening, 501, electron beam, 502, opening mark, 503, phosphor, 504, transparent member, 505, light, 506, separation wall, 507,. Photodetector, 508... Substrate, 601... Electron beam, 602... Thin film opening mark, 603... Phosphor, 604 .. Transparent substrate, 605 ... Light, 606 ... Separation stop, 607. Scattered electrons, 610 ... scattered electron limiting aperture 701 ... electron beam, 702 ... aperture mark, 703 ... phosphor, 704 ... transparent substrate, 705 ... light, 707 ... light detection element, 708 ... substrate, 709 ... optical lens.

Claims (5)

A plurality of aperture marks; means for converting an electron beam that has passed through the plurality of aperture marks into light; and a plurality of photodetectors that are provided corresponding to the plurality of aperture marks and detect the converted light. has, by scanning the electron beam onto the opening mark, in an electron beam detector for detecting the electron beam, between the means for converting the electron beam into light and said plurality of light detecting elements, wherein An electron beam detector comprising a separation diaphragm having openings formed at the same interval as the opening of the opening mark . The electron beam detector according to claim 1.
An electron beam detector comprising a transparent substrate having a phosphor on the incident side of the electron beam as means for converting the electron beam into light. 2. The electron beam detector according to claim 1, wherein the aperture mark is made of a scatterer, and is scattered by the scatterer between the aperture mark and the means for converting the electron beam into light. An electron beam detector comprising an aperture for limiting electrons. Obtaining a beam profile signal from the electron beam detector according to claim 1, 2, or 3;
Adjusting the electron optical system and the control system of the electron beam drawing apparatus from the obtained beam profile signal;
And a pattern drawing process using the adjusted electron optical system and the control system. A means for adjusting an electron optical system based on a beam profile signal from the electron beam detector, comprising the electron beam detector according to claim 1, 2, or 3.
Means for adjusting a control system based on a beam profile signal from the electron beam detector;
An electron beam drawing apparatus comprising: means for performing pattern drawing using the adjusted electron optical system and the control system.

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