JP3948773B2 - Wafer displacement detector - Google Patents

Wafer displacement detector Download PDF

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Publication number
JP3948773B2
JP3948773B2 JP34814796A JP34814796A JP3948773B2 JP 3948773 B2 JP3948773 B2 JP 3948773B2 JP 34814796 A JP34814796 A JP 34814796A JP 34814796 A JP34814796 A JP 34814796A JP 3948773 B2 JP3948773 B2 JP 3948773B2
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JP
Japan
Prior art keywords
wafer
thermometer
temperature
sensor head
detection device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP34814796A
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Japanese (ja)
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JPH10189692A (en
Inventor
弘昭 木村
克弘 山崎
信幸 飯島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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Priority to JP34814796A priority Critical patent/JP3948773B2/en
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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

【0001】
【発明の属する技術分野】
本発明はウェハズレ検出装置に関し、特にエッチング,スパッタ,CVDに有用なウェハズレ検出装置に関する。
【0002】
【従来の技術】
従来、真空容器内にウェハステージを配置し、このウェハステージ上にウェハを載せて回転処理する真空処理装置は、種々の分野、例えばエッチング,スパッタ、CVDなどに用いられている。ところで、こうした真空処理装置では、ウェハが高速で回転するため、回転を始める前にウェハが所定の場所に設置されていることを確認する必要がある。つまり、本来、図2に示すように真空容器(図示せず)に配置されたウェハステージ1の段差2にウェハ3が乗っている状態が正常の状態であるが、図3のようにウェハ3が段差2からずれて異常の状態になっていないかどうかを確認する必要がある。なお、図中の符番4は前記ウェハステージ1と嵌合する回転体、付番5はヒータを示す。
【0003】
【発明が解決しようとする課題】
ところで、図3に示すようにウェハ3が段差2からずれた場合、回転時の遠心力によりウェハ3がウェハステージ1から飛び出し、ウェハ3が真空容器の内壁などに衝突し、ウェハが破損するという課題があった。なお、従来、ウェハがウェハステージの段差からずれているかどうかを確認する手段が存在しなかった。
【0004】
本発明はこうした事情を考慮してなされたもので、ウェハの温度を測定する温度計を設けることにより、ウェハのウェハステージからのズレの有無を的確に把握し、ウェハの破損を防止し得るウェハズレ検出装置を提供することを目的とする。
【0005】
【課題を解決するための手段】
本発明は、内部にウェハが配置される真空容器と、この真空容器内に配置され、前記ウェハを落し込む段差を有したウェハステージと、このウェハステージを回転させる回転機構と、前記ウェハを加熱するヒータと、前記ウェハの温度を測定する温度計と、この温度計に電気的に接続され、該温度計により得られたウェハの温度分布に基づいてウェハのズレを判別する演算器とを具備することを特徴とするウェハズレ検出装置である。
【0006】
本発明において、前記温度計の一例としてはウェハの表面の温度を検知する放射温度計が挙げられる。この放射温度計は、放射温度計本体と、温度計センンサーヘッドと、前記放射温度計本体と温度計センサーヘッドとを接続する光ファイバーとから構成されている。前記温度計センサーヘッドはウェハの周縁部の真上に位置するように設けることが好ましい。前記温度計センサーヘッドはウェハのズレに温度影響を受け易いウェハの周縁部を測定するのが好ましく、ウェハの周縁部の真上に位置するように1つ以上設置する。
【0007】
(作用)
本発明は、温度計を用いてウェハの周方向の温度分布によりウェハのズレを判別するものである。つまり、ウェハがウェハホルダーの段差に正しく乗っている場合は、ウェハの周方向の温度分布はほぼ一定の値となる。しかし、ウェハがウェハホルダーの段差から外れて図3のような状態になった場合は、ウェハが乗りあげた部分でウェハの温度が低く、逆にこの位置と周方向に180°ずれた位置ではウェハの温度が高くなる。従って、この異常の場合、低速で回転するウェハは、例えば図4の曲線(ロ)のように高い温度と低い温度が交互に周期的にくるような特性をもつことになる。このように、温度計によって測定したウェハの温度分布に基づいてウェハのズレを正確には把握することができる。
【0008】
【発明の実施の形態】
以下、この発明の一実施例を図1を参照して説明する。
図中の付番11は、上部にAl製の蓋12が取り付けられたSUS製の真空容器である。前記蓋12は、後述するウェハホルダーの段差の真上に位置する部分に開口部12aを有するとともに、その上にガラス製の窓12bを有している。前記真空容器11内には、ウェハ13を載置するウェハホルダー14及びこのウェハホルダー14とともに空洞部を形成する回転体15が配置されている。前記ウェハホルダー14には、ウェハ13を落し込んで保持する段差16が設けられている。この段差16にはウェハ搬送上の都合から多少の遊びが設けられている。
【0009】
前記空洞部内には、ウェハ13を加熱するヒータ17が配置されている。前記回転体15の下部は、回転導入機構18に接続されている。前記ウェハホルダー14の段差16の真上に位置する真空容器11の外側には、前記ウェハ13の表面温度を測定する温度計センサーヘッド19が配置されている。この温度計センサーヘッド19には、光ファイバー20を介して放射温度計本体21接続されている。ここで、前記温度計センサーヘッド19、光ファイバー20及び放射温度計本体21により放射温度計が構成されている。前記放射温度計本体21には、測定されたウェハ13の温度分布に基づいてウェハ13のズレを判別する演算器22が電気的に接続されている。前記演算器22には、該演算器22からのウェハ13のズレの有無の信号が送られる制御盤23電気的に接続されている。
【0010】
こうした構成の装置において、まず、ウェハ13を例えば30rpm程度で低速回転する。そして、この低速回転時に、放射温度計によるウェハ13の周方向の温度分布が図4の曲線(イ)のようにほぼ一定になる場合は、放射温度計本体21から演算器22に温度のアナログ信号をアナログ信号線24を介して送り、演算器22から制御盤23に“ウェハズレ無し”の信号を送り、ウェハ13を例えば3000rpm程度の高速で回転し、例えばエッチングなどの処理を行う。
【0011】
逆に、低速回転時に、放射温度計によるウェハ13の周方向の温度分布が図4の曲線(ロ)のように大きな温度変化をとる場合は、放射温度計本体21から演算器22に温度のアナログ信号をアナログ信号線24を介して送り、演算器22から制御盤23に“ウェハズレ有り”の信号を送り、ウェハ13のズレを直してから高速回転でエッチングなどの処理を行う。
【0012】
上記実施例によれば、ウェハホルダー14の段差16の真上に位置する真空容器11の外側に前記ウェハ13の表面温度を測定する温度計センサーヘッド19が配置され、更にこの温度計センサーヘッド19に測定されたウェハ13の温度分布に基づいてウェハ13のズレを判別する演算器22が電気的に接続された構成になっているため、ウェハ13がウェハホルダー14の段差16に正常に乗っているか否かを容易に判別できる。つまり、ウェハ13がウェハホルダー14の段差16に正常に乗っている場合は、図4の曲線(イ)に示すようにウェハの周方向の表面温度がほぼ一定になる温度分布を示し、正常に乗っていない場合は図4の曲線(ロ)に示すように低回転数に周期して温度が変化する温度分布を示す。従って、図4の温度分布からウェハ13がウェハホルダー14の段差16に正常に乗っているか否かを確実に判別でき、ウェハ13が前記段差16からはみ出して真空容器の内壁などに衝突し、破損することを回避できる。
【0013】
【発明の効果】
以上詳述した如く本発明によれば、ウェハの温度を測定する温度計を設けることにより、ウェハのウェハステージからズレを的確に把握し、ウェハの破損を防止し得るウェハズレ検出装置を提供できる。
【図面の簡単な説明】
【図1】本発明の一実施例に係るウェハズレ検出装置の全体図。
【図2】ウェハがウェハホルダーの段差に正常に乗っている場合の説明図。
【図3】ウェハがウェハホルダーの段差からはみ出した異常の状態の場合の説明図。
【図4】ウェハがウェハホルダーの段差に正常に乗っている場合及び段差からはみ出した異常の状態の場合の温度と時間との関係を示す特性図。
【符号の説明】
11…真空容器、
12…蓋、
13…ウェハ、
14…ウェハホルダー、
15…回転体、
16…段差、
17…ヒータ、
18…回転導入機構、
19…温度計センサーヘッド、
20…光ファイバー、
21…放射温度計本体、
22…演算器、
23…制御盤、
24…アナログ信号線。
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wafer shift detection device, and more particularly to a wafer shift detection device useful for etching, sputtering, and CVD.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, vacuum processing apparatuses that place a wafer stage in a vacuum vessel and place the wafer on the wafer stage for rotation processing are used in various fields such as etching, sputtering, and CVD. By the way, in such a vacuum processing apparatus, since the wafer rotates at a high speed, it is necessary to confirm that the wafer is installed at a predetermined place before starting the rotation. That is, the state in which the wafer 3 is placed on the step 2 of the wafer stage 1 disposed in the vacuum vessel (not shown) as shown in FIG. 2 is a normal state, but the wafer 3 as shown in FIG. It is necessary to confirm whether or not is shifted from the step 2 to an abnormal state. In the figure, reference numeral 4 denotes a rotating body that fits with the wafer stage 1, and reference numeral 5 denotes a heater.
[0003]
[Problems to be solved by the invention]
By the way, when the wafer 3 deviates from the step 2 as shown in FIG. 3, the wafer 3 jumps out of the wafer stage 1 due to the centrifugal force at the time of rotation, and the wafer 3 collides with the inner wall of the vacuum vessel and the wafer is damaged. There was a problem. Conventionally, there has been no means for confirming whether the wafer is deviated from the level difference of the wafer stage.
[0004]
The present invention has been made in consideration of such circumstances, and by providing a thermometer for measuring the temperature of the wafer, it is possible to accurately grasp the presence or absence of deviation of the wafer from the wafer stage and prevent wafer damage. An object is to provide a detection device.
[0005]
[Means for Solving the Problems]
The present invention includes a vacuum container in which a wafer is disposed, a wafer stage disposed in the vacuum container and having a step for dropping the wafer, a rotating mechanism for rotating the wafer stage, and heating the wafer A heater for measuring the temperature of the wafer, and a calculator electrically connected to the thermometer and discriminating a wafer deviation based on a temperature distribution of the wafer obtained by the thermometer. This is a wafer deviation detecting device.
[0006]
In the present invention, an example of the thermometer is a radiation thermometer that detects the temperature of the surface of the wafer. This radiation thermometer is composed of a radiation thermometer body, a thermometer sensor head, and an optical fiber connecting the radiation thermometer body and the thermometer sensor head. The thermometer sensor head is preferably provided so as to be located immediately above the peripheral edge of the wafer. The thermometer sensor head preferably measures the peripheral edge of the wafer, which is susceptible to temperature effects due to wafer misalignment, and one or more thermometer sensor heads are provided so as to be positioned directly above the peripheral edge of the wafer.
[0007]
(Function)
The present invention discriminates the deviation of the wafer from the temperature distribution in the circumferential direction of the wafer using a thermometer. In other words, when the wafer is correctly on the step of the wafer holder, the temperature distribution in the circumferential direction of the wafer has a substantially constant value. However, when the wafer moves out of the step of the wafer holder and becomes in the state as shown in FIG. 3, the temperature of the wafer is low at the portion where the wafer has traveled, and conversely at this position 180 ° shifted from the circumferential direction. The wafer temperature increases. Therefore, in the case of this abnormality, a wafer that rotates at a low speed has characteristics such that a high temperature and a low temperature alternately and periodically, as shown by a curve (b) in FIG. As described above, the wafer deviation can be accurately grasped based on the temperature distribution of the wafer measured by the thermometer.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention will be described below with reference to FIG.
Reference numeral 11 in the figure denotes a SUS vacuum container having an Al lid 12 attached to the upper part. The lid 12 has an opening 12a at a portion located immediately above a step of a wafer holder, which will be described later, and a glass window 12b on the opening 12a. In the vacuum vessel 11, a wafer holder 14 on which the wafer 13 is placed and a rotating body 15 that forms a cavity together with the wafer holder 14 are arranged. The wafer holder 14 is provided with a step 16 for dropping and holding the wafer 13. The step 16 is provided with some play for the convenience of wafer transfer.
[0009]
A heater 17 for heating the wafer 13 is disposed in the cavity. The lower part of the rotating body 15 is connected to a rotation introducing mechanism 18. A thermometer sensor head 19 for measuring the surface temperature of the wafer 13 is disposed outside the vacuum vessel 11 located immediately above the step 16 of the wafer holder 14. A radiation thermometer main body 21 is connected to the thermometer sensor head 19 via an optical fiber 20. Here, the thermometer sensor head 19, the optical fiber 20 and the radiation thermometer main body 21 constitute a radiation thermometer. The radiation thermometer main body 21 is electrically connected to a calculator 22 that discriminates the deviation of the wafer 13 based on the measured temperature distribution of the wafer 13. The arithmetic unit 22 is electrically connected to a control panel 23 to which a signal indicating whether or not the wafer 13 is shifted from the arithmetic unit 22 is sent.
[0010]
In the apparatus having such a configuration, first, the wafer 13 is rotated at a low speed of, for example, about 30 rpm. When the temperature distribution in the circumferential direction of the wafer 13 by the radiation thermometer becomes substantially constant as shown by the curve (a) in FIG. 4 during this low-speed rotation, the analog temperature is transferred from the radiation thermometer main body 21 to the calculator 22. A signal is sent through the analog signal line 24, a signal of “no wafer misalignment” is sent from the computing unit 22 to the control panel 23, the wafer 13 is rotated at a high speed of about 3000 rpm, for example, and processing such as etching is performed.
[0011]
On the other hand, when the temperature distribution in the circumferential direction of the wafer 13 by the radiation thermometer changes greatly as shown by the curve (b) in FIG. 4 during low-speed rotation, the temperature is transferred from the radiation thermometer body 21 to the calculator 22. An analog signal is sent through the analog signal line 24, a signal indicating “wafer misalignment” is sent from the computing unit 22 to the control panel 23, and after the misalignment of the wafer 13, the processing such as etching is performed at high speed.
[0012]
According to the above embodiment, the thermometer sensor head 19 for measuring the surface temperature of the wafer 13 is arranged outside the vacuum vessel 11 positioned just above the step 16 of the wafer holder 14, and this thermometer sensor head 19 is further arranged. Since the computing unit 22 for discriminating the deviation of the wafer 13 is electrically connected based on the temperature distribution of the wafer 13 measured in step 1, the wafer 13 is normally mounted on the step 16 of the wafer holder 14. It can be easily determined whether or not there is. That is, when the wafer 13 is normally on the step 16 of the wafer holder 14, as shown by the curve (a) in FIG. 4, the temperature distribution in which the surface temperature in the circumferential direction of the wafer becomes almost constant is shown. When the vehicle is not on the vehicle, a temperature distribution is shown in which the temperature changes periodically at a low rotational speed as shown by the curve (b) in FIG. Therefore, from the temperature distribution of FIG. 4, it can be reliably determined whether or not the wafer 13 is normally on the step 16 of the wafer holder 14, and the wafer 13 protrudes from the step 16 and collides with the inner wall of the vacuum vessel and breaks. Can be avoided.
[0013]
【The invention's effect】
As described above in detail, according to the present invention, by providing a thermometer for measuring the temperature of a wafer, it is possible to provide a wafer deviation detecting device capable of accurately grasping the deviation from the wafer stage of the wafer and preventing the wafer from being damaged.
[Brief description of the drawings]
FIG. 1 is an overall view of a wafer shift detection apparatus according to an embodiment of the present invention.
FIG. 2 is an explanatory diagram when the wafer is normally on the step of the wafer holder.
FIG. 3 is an explanatory diagram in the case of an abnormal state in which the wafer protrudes from the level difference of the wafer holder.
FIG. 4 is a characteristic diagram showing the relationship between temperature and time when the wafer is normally on the step of the wafer holder and in an abnormal state that protrudes from the step.
[Explanation of symbols]
11 ... Vacuum container,
12 ... lid,
13 ... wafer,
14 ... Wafer holder,
15 ... Rotating body,
16 ... step,
17 ... Heater,
18 ... Rotation introduction mechanism,
19 ... Thermometer sensor head,
20 ... Optical fiber,
21 ... Radiation thermometer body,
22 ... Calculator,
23 ... Control panel,
24… Analog signal line.

Claims (2)

内部にウェハが配置される真空容器と、この真空容器内に配置され、前記ウェハを落し込む段差を有したウェハステージと、このウェハステージを回転させる回転機構と、前記ウェハを加熱するヒータと、前記ウェハの温度を測定する温度計と、この温度計に電気的に接続され、該温度計により得られたウェハの温度分布に基づいてウェハのズレを判別する演算器とを具備することを特徴とするウェハズレ検出装置。A vacuum container in which a wafer is disposed, a wafer stage disposed in the vacuum container and having a step for dropping the wafer, a rotating mechanism for rotating the wafer stage, a heater for heating the wafer, A thermometer for measuring the temperature of the wafer, and a calculator electrically connected to the thermometer and discriminating a wafer deviation based on a temperature distribution of the wafer obtained by the thermometer. Wafer displacement detection device. 前記温度計は、放射温度計本体と温度計センンサーヘッドと前記放射温度計本体と温度計センサーヘッドとを接続する光ファイバーとから構成され、前記温度計センサーヘッドはウェハの周縁部の真上に位置するように設けられていることを特徴とする請求項1記載のウェハズレ検出装置。The thermometer is composed of a radiation thermometer body, a thermometer sensor head, and an optical fiber connecting the radiation thermometer body and the thermometer sensor head, and the thermometer sensor head is directly above the peripheral edge of the wafer. The wafer shift detection device according to claim 1, wherein the wafer shift detection device is provided so as to be positioned.
JP34814796A 1996-12-26 1996-12-26 Wafer displacement detector Expired - Fee Related JP3948773B2 (en)

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KR100416292B1 (en) * 2001-02-24 2004-01-31 (주)지우텍 Device for detecting wafer positioning failure on semiconductor processing device and method thereof
KR20050050824A (en) * 2003-11-26 2005-06-01 세메스 주식회사 System and method for controlling interlock in bake apparatus
CN101990707B (en) * 2008-09-30 2013-03-06 东京毅力科创株式会社 Method for detecting abnormal placement state of substrate, substrate processing method, computer-readable storage medium and substrate processing apparatus
JP2010088608A (en) * 2008-10-07 2010-04-22 Olympus Corp Warming unit
DE102009010555A1 (en) 2009-02-25 2010-09-02 Siltronic Ag Method for detecting a misalignment of a semiconductor wafer during a thermal treatment
JP5535347B1 (en) * 2013-02-04 2014-07-02 エピクルー株式会社 Imaging apparatus, semiconductor manufacturing apparatus, and semiconductor manufacturing method
JP6611666B2 (en) 2016-05-16 2019-11-27 東京エレクトロン株式会社 Mounting table system, substrate processing apparatus, and temperature control method

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