JP3929648B2 - 遠紫外線露光用ポジ型フォトレジスト組成物 - Google Patents

遠紫外線露光用ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP3929648B2
JP3929648B2 JP21136899A JP21136899A JP3929648B2 JP 3929648 B2 JP3929648 B2 JP 3929648B2 JP 21136899 A JP21136899 A JP 21136899A JP 21136899 A JP21136899 A JP 21136899A JP 3929648 B2 JP3929648 B2 JP 3929648B2
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group
acid
positive photoresist
embedded image
carbon atoms
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JP21136899A
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Japanese (ja)
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JP2001042533A (ja
JP2001042533A5 (hr
Inventor
健一郎 佐藤
浩司 白川
利明 青合
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP21136899A priority Critical patent/JP3929648B2/ja
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Publication of JP2001042533A5 publication Critical patent/JP2001042533A5/ja
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP21136899A 1999-07-26 1999-07-26 遠紫外線露光用ポジ型フォトレジスト組成物 Expired - Fee Related JP3929648B2 (ja)

Priority Applications (1)

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JP21136899A JP3929648B2 (ja) 1999-07-26 1999-07-26 遠紫外線露光用ポジ型フォトレジスト組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21136899A JP3929648B2 (ja) 1999-07-26 1999-07-26 遠紫外線露光用ポジ型フォトレジスト組成物

Publications (3)

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JP2001042533A JP2001042533A (ja) 2001-02-16
JP2001042533A5 JP2001042533A5 (hr) 2005-07-07
JP3929648B2 true JP3929648B2 (ja) 2007-06-13

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JP21136899A Expired - Fee Related JP3929648B2 (ja) 1999-07-26 1999-07-26 遠紫外線露光用ポジ型フォトレジスト組成物

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9250517B2 (en) 2012-06-26 2016-02-02 Shin-Etsu Chemical Co., Ltd. Polymer, positive resist composition and patterning process

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7244542B2 (en) * 2002-05-30 2007-07-17 Shipley Company, L.L.C. Resins and photoresist compositions comprising same
JP2007101715A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp パターン形成方法及びそれに用いるレジスト組成物
JP4954576B2 (ja) * 2006-03-15 2012-06-20 東京応化工業株式会社 厚膜レジスト積層体およびその製造方法、レジストパターン形成方法
JP2010102336A (ja) * 2008-09-29 2010-05-06 Fujifilm Corp パターン形成方法
JP5427436B2 (ja) * 2009-02-26 2014-02-26 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP5277022B2 (ja) * 2009-02-26 2013-08-28 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP5537829B2 (ja) * 2009-03-31 2014-07-02 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9250517B2 (en) 2012-06-26 2016-02-02 Shin-Etsu Chemical Co., Ltd. Polymer, positive resist composition and patterning process

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JP2001042533A (ja) 2001-02-16

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