JP3916676B2 - Multi-layer magnetic exchange stabilization for MR heads - Google Patents

Multi-layer magnetic exchange stabilization for MR heads Download PDF

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JP3916676B2
JP3916676B2 JP54693198A JP54693198A JP3916676B2 JP 3916676 B2 JP3916676 B2 JP 3916676B2 JP 54693198 A JP54693198 A JP 54693198A JP 54693198 A JP54693198 A JP 54693198A JP 3916676 B2 JP3916676 B2 JP 3916676B2
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layer
permanent magnet
sensor
magnetoresistive
wing region
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JP2002511177A (en
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フェルナンデス−デ−カストロ，ジュアン，ジェイ．
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Seagate Technology LLC
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発明の背景
本発明は、一般的には、ディスクドライブデータ記憶システムに使うための磁気抵抗（ＭＲ）ヘッドに関する。更に詳しくは、本発明は、ＭＲセンサ層と軟隣接層（ＳＡＬ）を安定化するために別々の永久磁石（ＰＭ）層を有するＭＲヘッドに関する。
磁気記録用途で必要なヘッド性能を得るためには、ＭＲ素子（ＭＲＥ）またはセンサ層を単磁区に安定化することが望ましい。このＭＲＥ層の単磁区への安定化は、典型的にはセンサ形状、反強磁性層、ＰＭ静磁結合層、またはＰＭ強磁性結合層の組合せを使うことによって達成する。垂直バイアス用にＳＡＬを使う設計で、最高のヘッド性能を得るためには、ＭＲヘッドのＳＡＬとＭＲ層の両方を単磁区状態に安定化すべきである。
ＰＭをオーバレイした設計では、ＳＡＬとＭＲＥ層を共にこのＰＭ層に強磁性的に結合する。しかし、これらのＰＭをオーバレイした設計では、ヘッド安定性に影響せずに低抵抗層は使えないので、ヘッド抵抗が高い。これは、安定化のためには、ＭＲセンサ層とＳＡＬの両方がＰＭと接触していなければならないと言う事実による。従って、ＳＡＬとオーバレイしたＰＭ安定化を利用する低抵抗ＭＲヘッドは、この技術での有意義な改善であろう。
発明の概要
データ記憶システムに使うための磁気抵抗（ＭＲ）ヘッドを開示する。このＭＲヘッドは、ＭＲセンサ層およびこのＭＲセンサ層の長さに沿って配置され、このＭＲセンサ層を垂直にバイアスすようようにされた軟隣接層（ＳＡＬ）を含む。スペーサ層をＭＲヘッドの中央領域でＭＲセンサ層とＳＡＬの間に作る。ＭＲセンサ層とＳＡＬは、第１および第２永久磁石（ＰＭ）層によって独立に安定化される。これらのＰＭ層は、ＭＲヘッドのウィング領域でＳＡＬとＭＲ層に接触している。これは、ＭＲヘッドの抵抗を低めるために、第１および第２ウィング領域で第１および第２ＰＭ層の間に低抵抗材料の層を置けるようにする。
【図面の簡単な説明】
図１は、本発明の好適実施例によるＭＲヘッドの、空気軸受面（ＡＢＳ）の見方で見た線図である。
図２は、図１に示すＭＲヘッドの制作方法の最初の工程を示す線図である。
図３は、図１に示すＭＲヘッドの制作方法の第２工程を示す線図である。
図４は、図１に示すＭＲヘッドの制作方法の第３工程を示す線図である。
図５は、図１に示すＭＲヘッドの制作方法の第４工程を示す線図である。
図６は、図１に示すＭＲヘッドの制作方法の第５工程を示す線図である。
好適実施例の詳細な説明
本発明は、一部、もしＳＡＬのＰＭ安定化をＳＡＬバイアスしたＭＲヘッドのＭＲセンサ層のＰＭ安定化と無関係に達成するならば、低抵抗層を含めてヘッドの抵抗を下げることができるという認識に基づく。このため、本発明のＭＲヘッドでは、二つの別々のＰＭ層を使ってＳＡＬとＭＲセンサ層を独立に安定化する。このＳＡＬと二つのＰＭ層の一つとを強磁性的に結合し、一方ＭＲセンサ層と他のＰＭ層を強磁性的に結合する。追加の低抵抗層をこれら二つのＰＭ層の間にサンドイッチし、それによって安定性と低抵抗性を同時にもたらすことができる。
図１に示すように、本発明のＭＲヘッド１００は、第１読取り装置間隙１１０、ＳＡＬ１２０、スペーサ層１３０、第１ＰＭ層１４０（ＭＲヘッド１００のウィング領域に１４０Ａおよび１４０Ｂで示す）、低抵抗層１５０（ウィング領域に１５０Ａおよび１５０Ｂで示す）、第２ＰＭ層１６０（ウィング領域に１６０Ａおよび１６０Ｂで示す）、ＭＲセンサ層またはＭＲＥ１７０、キャップ層１８０および第２読取り装置間隙１８５を含む。ここで使うように、層１４０、１５０および１６０を参照することは、ＭＲヘッドのウィング領域または能動センサ区域でのこれらの層と類似の表示を含めることを意図する。例えば、層１４０を参照することは、１４０Ａおよび１４０Ｂとして表示する層１４０の部分を含めることを意図する。
第１読取り装置間隙１１０は、例えば、Ａｌ2Ｏ3またはその他の既知の間隙材料の層でも良い。ＳＡＬ１２０は、ＮｉＦｅＣｒまたはＭＲＥのＳＡＬ垂直バイアスに有用であるとして知られる、低飽和保磁力および高透磁率を有する多種多様なその他の材料のどれかの層でも良い。ＳＡＬ１２０を作るために使用できる他の材料の例は、ＮｉＦｅＲｈおよびＮｉＦｅＲｅである。
スペーサ層１３０は、Ｔａまたは垂直バイアス技術でＭＲＥ層とＳＡＬの間に典型的に使用する、その他の絶縁スペーサ材料でも良い。例えば、スペーサ層１３０は、ＳｉＯ2またはＡｌ2Ｏ3でも良い。ＰＭ層１４０および１６０は、例えば、約４００Å（400×10-10ｍ）の厚さを有するＣｏＣｒＰｔの層でも良い。しかし、ＰＭ層１４０および１６０は、ＣｏＰｔまたはＣｏＮｉＰのような他の材料でも良い。更に、ＰＭ層１４０および１６０は、各々別のＰＭ材料で作っても良く、４００Å（400×10-10ｍ）以外の厚さがあっても良い。低抵抗層１５０は、例えば、ＣｒまたはＴｉＷ／Ｔａの６００Å（600×10-10ｍ）の厚さの層でも良い。層１５０は、ＡｕおよびＭｏのような他の低抵抗材料で作っても良く、特定の用途に対して厚さが変っても良い。
ＭＲセンサ層１７０は、多種多様なＭＲ材料のどれでも良い。好適実施例では、ＭＲセンサ層１７０がＮｉＦｅである。キャップ層１８０は、ＭＲヘッドにキャップとして普通使う多種多様な材料のどれでも良い。好適実施例では、層１８０がＴａである。第１および第２読取り装置間隙１１０および１８５は、多種多様な材料のどれでも良いが、好適実施例では、読取り装置間隙１１０および１８５がアルミナである。
ＰＭ層１４０は、ＳＡＬ１２０をこれらの二つの層の間の強磁性結合を使って単磁区に安定化する。ＰＭ層１６０は、ＭＲセンサ層１７０をやはりこれらの二つの層の間の強磁性結合を使って単磁区に安定化する。この独立のＰＭ安定化アプローチは、ヘッド全体の抵抗を下げるために、二つのＰＭ層１４０および１６０の間にサンドイッチした低抵抗層１５０の使用を可能にする。それで、単一ＰＭ層をＭＲセンサ層とＳＡＬの両方に隣接して作る先行技術と違って、本発明は、安定性と低抵抗性を同時にもたらす。
図２〜図６は、本発明のある好適実施例に従ってＭＲヘッド１００を製作する方法の種々の工程を示す。図１は、この方法の更に他の工程を示す。これらの図には示さないが、この方法は、例えば、５μｍＡｌ2Ｏ3ベースコートで覆ったＡｌｓｉｍａｇ基板、およびセンダスト（Sendust）、ＮｉＦｅまたはその他の材料の磁気シールドで始めることができる。この構造体の上に、第１読取り装置間隙１１０を堆積する。次に、第１読取り装置間隙１１０の上にＳＡＬ１２０およびスペーサ層１３０を堆積する。これを図２に示す。
次に、図３に示すように、フォトレジスト１９０をスペーサ層１３０の上に、ＭＲヘッド１００の活性領域またはセンサ区域２００になる区域に堆積する。従来、自己整合エッチングおよび剥離法を使ってセンサ区域２００の外側のスペーサ層を除去し、そしてＰＭ層を残りのスペーサ層に隣接して右および左ウィング領域２１０および２２０に堆積した。しかし、本発明のＭＲヘッド１００を作る好適方法は、この点でかなり違う。
図４に示すように、先行技術の方法で使ったのと類似のエッチング法を使ってウィング領域２１０および２２０からスペーサ層１３０を除去する。フォトレジスト１９０がセンサ区域２００でスペーサ層１３０を保護し、この区域でのスペーサ層の除去を防ぐ。次に、図５に示すように、層１４０、１５０および１６０を、ウィング領域２１０および２２０でＳＡＬ１２０の上に、並びにセンサ区域２００でフォトレジスト１９０の上に逐次堆積する。それで、ウィング領域２１０および２２０では、従来の単一のＰＭ層が：第１ＰＭ層１４０、低抵抗金属層１５０および第２ＰＭ層１６０の三層で置換えらる。この三層をフォトレジスト１９０の上にも堆積する。
次に、図６に示すように、剥離法を使ってフォトレジスト１９０およびその上に堆積した層１４０、１５０および１６０の部分を除去する。その結果、第１ＰＭ層１４０が領域２１０および２２０で部分１４０Ａおよび１４０Ｂに分けられ、低抵抗層１５０が領域２１０および２２０で部分１５０Ａおよび１５０Ｂに分けられ、並びに第２ＰＭ層１６０が領域２１０および２２０で部分１６０Ａおよび１６０Ｂに分けられる。
最後に、ＭＲセンサ層１７０、キャップ層１８０および第２読取り装置間隙１８５をセンサ区域２００でスペーサ層１３０の上に、並びに領域２１０および２２０で第２永久磁石層１６０の上に堆積する。ＭＲ層とキャップ層は、当該技術で知られる種類のフォトマスクおよびミル作業でセンサの高さを決める前にこの構造体の上に堆積する。これらの層を全て堆積した構造体を図１に示す。
ＳＡＬ１２０およびＭＲセンサ層１７０に関するＰＭ層１４０および１６０の厚さに特別の注意を払うべきである。ＰＭ層の厚さは、ＳＡＬおよびＭＲセンサ層の安定性がＰＭとＳＡＬまたはＭＲセンサ層の間のＢｒ＊ｔ（磁気モーメントと厚さの積）の比に依るので、重要である。該ＰＭ下層の構造は、ＰＭ特性が該下層の特性に影響されるので、重要である。
本発明は、非常に多くの利点をもたらす。第１に、ＳＡＬおよびＭＲ層に単磁区を達成するが、このＳＡＬおよびＭＲ層の安定化が独立に制御可能である。更に、活性領域またはセンサ区域２００の外側の抵抗を、低抵抗金属層１５０を含める能力によって減少する。事実、センサ区域の外側の抵抗は、主としてこの新しい低抵抗金属層によって決る。もし、このＰＭ層が適正な配向を達成するために他の材料を要するなら、低抵抗金属層１５０の上に追加のＰＭ下層を加えることができることに注意すべきである。本発明は、トラック上ビット誤り率（ＢＥＲ）またはトラック外ＢＥＲに損失なく、ＳＡＬおよびＭＲ層の磁区安定化を独立に制御可能であるという利点をもたらす。更に、本発明は、追加のマスキング工程が何も必要ないので、製作複雑度を増すことなく、その利点を達成する。
本発明を好適実施例を参照して説明したが、当業者には、この発明の精神および範囲から逸脱することなく、形および詳細に変更が出来ることが分るだろう。例えば、層１５０は、その抵抗特性のために選択した単層でよいが、もし望むならＰＭ層１６０の下層としても作用するように選ぶこともでき、他の実施例では層１５０が多層の堆積で、個々の層を低抵抗性のために選択し、他の層をＰＭ層１６０の磁気特性を改善するために選択してもよい。本発明の設計では、ウィング領域の多層がＭＲセンサのトラック上およびトラック外性能を低下しないことにも注意すべきである。 BACKGROUND OF THE INVENTION The present invention relates generally to magnetoresistive (MR) heads for use in disk drive data storage systems. More particularly, the present invention relates to an MR head having separate permanent magnet (PM) layers to stabilize the MR sensor layer and the soft adjacent layer (SAL).
In order to obtain the head performance required for magnetic recording applications, it is desirable to stabilize the MR element (MRE) or sensor layer in a single magnetic domain. This stabilization of the MRE layer to a single domain is typically achieved by using a combination of sensor geometry, antiferromagnetic layer, PM magnetostatic coupling layer, or PM ferromagnetic coupling layer. In designs that use SAL for vertical bias, to obtain the best head performance, both the SAL and MR layer of the MR head should be stabilized in a single domain state.
In a PM overlay design, both the SAL and MRE layers are ferromagnetically coupled to this PM layer. However, in the design in which these PMs are overlaid, the head resistance is high because the low resistance layer cannot be used without affecting the head stability. This is due to the fact that for stabilization, both the MR sensor layer and the SAL must be in contact with the PM. Therefore, a low resistance MR head that utilizes PM stabilization overlaid with SAL would be a significant improvement in this technology.
SUMMARY OF THE INVENTION A magnetoresistive (MR) head for use in a data storage system is disclosed. The MR head includes an MR sensor layer and a soft adjacent layer (SAL) disposed along the length of the MR sensor layer and adapted to bias the MR sensor layer vertically. A spacer layer is formed between the MR sensor layer and the SAL in the central region of the MR head. The MR sensor layer and SAL are independently stabilized by first and second permanent magnet (PM) layers. These PM layers are in contact with the SAL and MR layers in the wing region of the MR head. This allows a layer of low resistance material to be placed between the first and second PM layers in the first and second wing regions to reduce the MR head resistance.
[Brief description of the drawings]
FIG. 1 is a diagram of an MR head according to a preferred embodiment of the present invention as seen from the perspective of an air bearing surface (ABS).
FIG. 2 is a diagram showing the first step of the method for producing the MR head shown in FIG.
FIG. 3 is a diagram showing a second step of the method for producing the MR head shown in FIG.
FIG. 4 is a diagram showing a third step of the method for producing the MR head shown in FIG.
FIG. 5 is a diagram showing a fourth step of the method for producing the MR head shown in FIG.
FIG. 6 is a diagram showing a fifth step of the method for producing the MR head shown in FIG.
Detailed Description of Preferred Embodiments The present invention, in part, provides a low resistance layer if the PM stabilization of the SAL is achieved independently of the PM stabilization of the MR sensor layer of the SAL biased MR head. This is based on the recognition that the resistance of the head can be lowered. For this reason, in the MR head of the present invention, two separate PM layers are used to stabilize the SAL and MR sensor layers independently. The SAL and one of the two PM layers are ferromagnetically coupled, while the MR sensor layer and another PM layer are ferromagnetically coupled. An additional low resistance layer can be sandwiched between these two PM layers, thereby providing both stability and low resistance.
As shown in FIG. 1, the MR head 100 of the present invention includes a first reader gap 110, a SAL 120, a spacer layer 130, a first PM layer 140 (indicated by 140A and 140B in the wing region of the MR head 100), a low resistance layer. 150 (indicated by 150A and 150B in the wing region), a second PM layer 160 (indicated by 160A and 160B in the wing region), an MR sensor layer or MRE 170, a cap layer 180, and a second reader gap 185. As used herein, reference to layers 140, 150 and 160 is intended to include a display similar to these layers in the wing area or active sensor area of the MR head. For example, reference to layer 140 is intended to include the portion of layer 140 that is displayed as 140A and 140B.
The first reader gap 110 may be, for example, a layer of Al 2 O 3 or other known gap material. SAL 120 may be any layer of a wide variety of other materials with low coercivity and high permeability known to be useful for SAL vertical bias of NiFeCr or MRE. Examples of other materials that can be used to make SAL120 are NiFeRh and NiFeRe.
The spacer layer 130 may be Ta or other insulating spacer material typically used between the MRE layer and the SAL with a vertical bias technique. For example, the spacer layer 130 may be SiO 2 or Al 2 O 3 . The PM layers 140 and 160 may be, for example, a CoCrPt layer having a thickness of about 400 mm (400 × 10 −10 m). However, the PM layers 140 and 160 may be other materials such as CoPt or CoNiP. Furthermore, the PM layers 140 and 160 may be made of different PM materials, and may have a thickness other than 400 mm (400 × 10 −10 m). The low resistance layer 150 may be, for example, a layer having a thickness of 600 mm (600 × 10 −10 m) of Cr or TiW / Ta. Layer 150 may be made of other low resistance materials such as Au and Mo and may vary in thickness for a particular application.
The MR sensor layer 170 may be any of a wide variety of MR materials. In the preferred embodiment, the MR sensor layer 170 is NiFe. The cap layer 180 can be any of a wide variety of materials commonly used as a cap for MR heads. In the preferred embodiment, layer 180 is Ta. The first and second reader gaps 110 and 185 can be any of a wide variety of materials, but in the preferred embodiment, the reader gaps 110 and 185 are alumina.
The PM layer 140 stabilizes the SAL 120 into a single domain using ferromagnetic coupling between these two layers. The PM layer 160 stabilizes the MR sensor layer 170 in a single domain, again using ferromagnetic coupling between these two layers. This independent PM stabilization approach allows the use of a low resistance layer 150 sandwiched between the two PM layers 140 and 160 to reduce the overall resistance of the head. Thus, unlike the prior art, where a single PM layer is made adjacent to both the MR sensor layer and the SAL, the present invention provides stability and low resistance simultaneously.
2-6 illustrate various steps of a method of fabricating MR head 100 in accordance with a preferred embodiment of the present invention. FIG. 1 shows yet another step of the method. Although not shown in these figures, the method can begin with, for example, an Alsimag substrate covered with a 5 μm Al 2 O 3 base coat and a magnetic shield of Sendust, NiFe or other material. A first reader gap 110 is deposited on the structure. Next, a SAL 120 and a spacer layer 130 are deposited over the first reader gap 110. This is shown in FIG.
Next, as shown in FIG. 3, a photoresist 190 is deposited on the spacer layer 130 in an area that becomes the active area or sensor area 200 of the MR head 100. Conventionally, a spacer layer outside the sensor area 200 was removed using a self-aligned etch and strip method, and a PM layer was deposited in the right and left wing regions 210 and 220 adjacent to the remaining spacer layer. However, the preferred method of making the MR head 100 of the present invention is quite different in this respect.
As shown in FIG. 4, the spacer layer 130 is removed from the wing regions 210 and 220 using an etching method similar to that used in the prior art method. Photoresist 190 protects spacer layer 130 in sensor area 200 and prevents removal of the spacer layer in this area. Next, as shown in FIG. 5, layers 140, 150 and 160 are sequentially deposited on SAL 120 in wing regions 210 and 220 and on photoresist 190 in sensor area 200. Thus, in the wing regions 210 and 220, a conventional single PM layer can be replaced with three layers: a first PM layer 140, a low resistance metal layer 150, and a second PM layer 160. These three layers are also deposited on the photoresist 190.
Next, as shown in FIG. 6, the photoresist 190 and the portions of the layers 140, 150 and 160 deposited thereon are removed using a stripping method. As a result, the first PM layer 140 is divided into regions 140A and 140B in regions 210 and 220, the low resistance layer 150 is divided into regions 150A and 150B in regions 210 and 220, and the second PM layer 160 is divided into regions 210 and 220. Divided into portions 160A and 160B.
Finally, MR sensor layer 170, cap layer 180, and second reader gap 185 are deposited on spacer layer 130 in sensor area 200 and on second permanent magnet layer 160 in regions 210 and 220. The MR layer and cap layer are deposited on this structure prior to determining the height of the sensor with a photomask and mill operation of the type known in the art. A structure with all these layers deposited is shown in FIG.
Special attention should be paid to the thickness of the PM layers 140 and 160 with respect to the SAL 120 and MR sensor layer 170. The thickness of the PM layer is important because the stability of the SAL and MR sensor layers depends on the ratio of Br * t (the product of magnetic moment and thickness) between the PM and the SAL or MR sensor layer. The structure of the PM lower layer is important because PM characteristics are affected by the lower layer characteristics.
The present invention provides numerous advantages. First, a single domain is achieved in the SAL and MR layers, but the stabilization of the SAL and MR layers can be controlled independently. Furthermore, the resistance outside the active region or sensor area 200 is reduced by the ability to include a low resistance metal layer 150. In fact, the resistance outside the sensor area is mainly determined by this new low resistance metal layer. It should be noted that an additional PM underlayer can be added over the low resistance metal layer 150 if this PM layer requires other materials to achieve proper orientation. The present invention provides the advantage that the domain stabilization of the SAL and MR layers can be independently controlled without loss to on-track bit error rate (BER) or off-track BER. Furthermore, the present invention achieves its advantages without increasing fabrication complexity since no additional masking steps are required.
Although the present invention has been described with reference to preferred embodiments, workers skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention. For example, layer 150 may be a single layer selected for its resistance characteristics, but may also be selected to act as an underlayer for PM layer 160 if desired, in other embodiments layer 150 is a multi-layer deposition. Thus, individual layers may be selected for low resistance, and other layers may be selected to improve the magnetic properties of the PM layer 160. It should also be noted that in the design of the present invention, multiple layers in the wing area do not degrade the on-track and off-track performance of the MR sensor.

Claims (9)

データ記憶システムに使うための磁気抵抗ヘッドであって：
磁気抵抗センサ層；
該磁気抵抗センサ層の長さに沿って配置され、該磁気抵抗センサ層を垂直にバイアスするようにされた軟隣接層；
前記磁気抵抗ヘッドの活性領域で前記磁気抵抗センサ層と軟隣接層の間に作られたスペーサ層；
前記磁気抵抗ヘッドの活性領域の第１側および第２側で前記活性領域に隣接して配置された第１ウィング領域および第２ウィング領域において、前記磁気抵抗センサ層と接触して作られた第１永久磁石層；
前記磁気抵抗ヘッドの第１ウィング領域および第２ウィング領域で前記軟隣接層と接触して作られた第２永久磁石層；並びに
前記第１ウィング領域および第２ウィング領域で前記第１永久磁石層と第２永久磁石層の間に作られた低抵抗材料の層
を含み、該低抵抗材料の層の抵抗が前記第１永久磁石層および第２永久磁石層の抵抗より低く、それによって前記第１ウィング領域および第２ウィング領域で前記磁気抵抗ヘッドの抵抗を低めるようになっているヘッド。A magnetoresistive head for use in a data storage system:
Magnetoresistive sensor layer;
A soft adjacent layer disposed along the length of the magnetoresistive sensor layer and adapted to bias the magnetoresistive sensor layer vertically;
A spacer layer formed between the magnetoresistive sensor layer and a soft adjacent layer in an active region of the magnetoresistive head;
A first wing region and a second wing region disposed adjacent to the active region on the first side and the second side of the active region of the magnetoresistive head are formed in contact with the magnetoresistive sensor layer. 1 permanent magnet layer ;
The second permanent magnet layer made in contact with the soft adjacent layer in the first wing region and a second wing region of the magneto-resistive head; and
A layer of low resistance material formed between the first permanent magnet layer and the second permanent magnet layer in the first wing region and the second wing region.
And the resistance of the layer of low resistance material is lower than the resistance of the first permanent magnet layer and the second permanent magnet layer, thereby reducing the resistance of the magnetoresistive head in the first wing region and the second wing region. The head that has become . 請求項１の磁気抵抗ヘッドに於いて、前記第１永久磁石層および第２永久磁石層の各々が第１ウィング領域および第２ウィング領域で前記磁気抵抗センサ層と軟隣接層の間に作られたヘッド。2. The magnetoresistive head according to claim 1, wherein each of the first permanent magnet layer and the second permanent magnet layer is formed between the magnetoresistive sensor layer and the soft adjacent layer in the first wing region and the second wing region. Head. 請求項１の磁気抵抗ヘッドに於いて、前記磁気抵抗ヘッドの活性領域に直ぐ隣接する第１ウィング領域および第２ウィング領域の部分で、前記第１永久磁石層、低抵抗材料の層および第２永久磁石層の組合せ厚さが前記スペーサ層の厚さと実質的に等しいヘッド。2. The magnetoresistive head according to claim 1, wherein the first permanent magnet layer, the low resistance material layer, and the second wing region are adjacent to the first wing region and the second wing region immediately adjacent to the active region of the magnetoresistive head. A head in which the combined thickness of the permanent magnet layers is substantially equal to the thickness of the spacer layer. 請求項３の磁気抵抗ヘッドに於いて、前記第２永久磁石層およびスペーサ層を直接前記軟隣接層の上に作り、前記低抵抗材料の層を直接前記第２永久磁石層の上に作り、前記第１永久磁石層を直接前記低抵抗材料の層の上に作り、かつ前記磁気抵抗センサ層を直接前記第１永久磁石層の上に作るヘッド。4. The magnetoresistive head of claim 3, wherein said second permanent magnet layer and spacer layer are made directly on said soft adjacent layer, and said layer of low resistance material is made directly on said second permanent magnet layer. A head that makes the first permanent magnet layer directly on the layer of low resistance material and makes the magnetoresistive sensor layer directly on the first permanent magnet layer. 磁気抵抗センサであって：Magnetoresistive sensor:
当該センサの中央領域におよび当該センサの中央領域の第１側および第２側に隣接する該センサの第１ウィング領域および第２ウィング領域に作られた磁気抵抗素子層；Magnetoresistive element layers formed in a first wing region and a second wing region of the sensor adjacent to the central region of the sensor and to the first side and the second side of the central region of the sensor;
該磁気抵抗素子層を垂直にバイアスするようにされ、並びに当該センサの中央領域に、かつ該センサの第１ウィング領域および第２ウィング領域の少なくとも一部に作られた軟隣接層；A soft adjacent layer adapted to vertically bias the magnetoresistive element layer and formed in a central region of the sensor and in at least a portion of the first and second wing regions of the sensor;
当該センサの中央領域で前記磁気抵抗素子層および前記軟隣接層の各々に接触し且つそれらの間に作られたスペーサ層；A spacer layer in contact with and formed between each of the magnetoresistive element layer and the soft adjacent layer in a central region of the sensor;
当該センサの第１ウィング領域および第２ウィング領域で前記磁気抵抗素子層と軟隣接層の間に作られ、前記軟隣接層と強磁性的に結合する第１永久磁石層；A first permanent magnet layer formed between the magnetoresistive element layer and the soft adjacent layer in the first wing region and the second wing region of the sensor and ferromagnetically coupled to the soft adjacent layer;
当該センサの第１ウィング領域および第２ウィング領域で前記磁気抵抗素子層と軟隣接層の間に作られ、前記磁気抵抗素子層と強磁性的に結合する第２永久磁石層；並びにA second permanent magnet layer formed between the magnetoresistive element layer and the soft adjacent layer in the first wing region and the second wing region of the sensor and ferromagnetically coupled to the magnetoresistive element layer; and
前記第１ウィング領域および第２ウィング領域で前記第１永久磁石層と第２永久磁石層の間に作られた低抵抗材料の層A layer of low resistance material formed between the first permanent magnet layer and the second permanent magnet layer in the first wing region and the second wing region.
を含み、該低抵抗材料の層の抵抗が前記第１永久磁石層および第２永久磁石層の抵抗より低く、それによって前記第１ウィング領域および第２ウィング領域で前記磁気抵抗センサの抵抗を低めるようになっているセンサ。And the resistance of the layer of low resistance material is lower than the resistance of the first permanent magnet layer and the second permanent magnet layer, thereby reducing the resistance of the magnetoresistive sensor in the first wing region and the second wing region. Sensor. 請求項５の磁気抵抗センサに於いて、前記第２永久磁石層を前記磁気抵抗素子層と直接接触して作り、前記第１永久磁石層を前記軟隣接層と直接接触して作るセンサ。6. The sensor according to claim 5, wherein the second permanent magnet layer is formed in direct contact with the magnetoresistive element layer, and the first permanent magnet layer is formed in direct contact with the soft adjacent layer. 請求項６の磁気抵抗センサに於いて、前記低抵抗材料の層を直接前記第１永久磁石層の上に作り、かつ前記第２永久磁石層を直接前記低抵抗材料の層の上に作るセンサ。7. The magnetoresistive sensor of claim 6, wherein the layer of low resistance material is made directly on the first permanent magnet layer and the second permanent magnet layer is made directly on the layer of low resistance material. . 請求項５の磁気抵抗センサに於いて、当該磁気抵抗センサの中央領域に直ぐ隣接する第１ウィング領域および第２ウィング領域の部分で、前記第１永久磁石層、低抵抗材料の層および第２永久磁石層の組合せ厚さが前記スペーサ層の厚さと実質的に等しいセンサ。6. The magnetoresistive sensor according to claim 5, wherein the first permanent magnet layer, the layer of low resistance material, and the second wing region are adjacent to the central region of the magnetoresistive sensor at the first wing region and the second wing region. A sensor in which the combined thickness of the permanent magnet layers is substantially equal to the thickness of the spacer layer. 請求項５の磁気抵抗センサに於いて、前記第２永久磁石層の磁気特性を改善するために、前記低抵抗材料の層が前記第２永久磁石層の下層として作用するセンサ。6. The sensor of claim 5, wherein the layer of low resistance material acts as a lower layer of the second permanent magnet layer to improve the magnetic properties of the second permanent magnet layer.
JP54693198A 1997-09-02 1997-09-02 Multi-layer magnetic exchange stabilization for MR heads Expired - Fee Related JP3916676B2 (en)

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