JP3902342B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP3902342B2
JP3902342B2 JP28662998A JP28662998A JP3902342B2 JP 3902342 B2 JP3902342 B2 JP 3902342B2 JP 28662998 A JP28662998 A JP 28662998A JP 28662998 A JP28662998 A JP 28662998A JP 3902342 B2 JP3902342 B2 JP 3902342B2
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JP
Japan
Prior art keywords
wire
semiconductor device
wires
alignment mark
semiconductor
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Expired - Fee Related
Application number
JP28662998A
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Japanese (ja)
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JP2000114307A (en
Inventor
光彦 遠藤
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NEC Electronics Corp
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NEC Electronics Corp
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Publication date
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Priority to JP28662998A priority Critical patent/JP3902342B2/en
Publication of JP2000114307A publication Critical patent/JP2000114307A/en
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Publication of JP3902342B2 publication Critical patent/JP3902342B2/en
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns

Description

【０００１】
【発明の属する技術分野】
本発明はオン抵抗を可及的に低減した半導体装置に関する。
【０００２】
【従来の技術】
高速動作が要求される電子回路装置、例えば自動車の衝突安全装置として用いられるエアバッグの制御装置は衝突した時の衝撃を衝撃センサで検出しこの出力によりガス発生装置を作動させてエアバッグを膨らませ衝突の反動で前方に飛び出そうとする乗員を支えて安全を図っている。
この衝撃センサからの信号は一旦マイクロコンピュータを用いた制御回路に入力されて誤動作を防止しているが信号処理時間を可及的に短縮するためパルス応答速度が高速の半導体スイッチング素子が用いられる。
またコントローラ上のジョイステイックなどのマニピュレータや操作ボタンを操作して被制御部を遠隔操作するとき操作に対して被制御部を敏感に応答させることができるとコントローラの操作と被制御部の動作とを一体化させることができるためこのような部分にも高速の半導体スイッチング素子が一般的に用いられている。
このような高速半導体スイッチング素子は素子本体のパルス応答速度が高速であることが必要であるが素子本体を外装した状態での動作も重要である。
半導体スイッチング素子としてトランジスタの一例を図４及び図５から説明する。
図において１は半導体ペレットで、内部にトランジスタ素子が形成された半導体ペレット本体２の一方の面にコレクタ領域と接続されたコレクタ電極３を形成し他の面にベース領域とエミッタ領域にそれぞれ接続された導電ランド２ａ、２ｂを形成し、さらにこの導電ランド２ａ、２ｂ部分を窓明けして絶縁被膜５で被覆して窓明け部分に露呈した導電ランド２ａ、２ｂ部分でベース電極６、エミッタ電極７を形成している。
８は半導体ペレット１を接着剤（図示せず）を介してマウントしたアイランド、９は３本一組のリードで、図示例では一本のリード９ａはアイランド８に電気的に接続され他のリード９ｂ、９ｃは一端がアイランド８の近傍に配置されている。
１０、１１はそれぞれ半導体ペレット１上のベース電極６とリード９ｂ間エミッタ電極７とリード９ｃ間を接続するワイヤ、１２は半導体ペレット１を含む主要部分を外装した樹脂を示す。
この半導体装置に用いられる半導体ペレット１はパルス応答特性が高速のものが用いられる。
また主電流が流れるワイヤ１１は動作電流に対して十分大きな径のワイヤが用いられる。
例えばセンサやマニュピレータの出力を伝達する場合、動作電流値が０．３ｍＡのものでは金線の場合直径２５μｍで十分でアルミニウム線でも直径５０μｍで十分である。
ところで半導体装置のスイッチング動作は完全に導通、遮断するものと導通領域で電流変化させるものとがあり、前者は消費電力が小さくて済むが動作速度がやや劣るという欠点があり、後者は常に電流が流れるため消費電力が大きいが高速動作できるという特徴がある。
一方自動車のように外部ノイズが大きい環境では最大振幅で信号をスイッチングさせ外部ノイズに対する信頼性を高めている。
そのため小電流動作の半導体装置でもオンオフ動作させているが半導体ペレット１として十分高速動作可能なものを用いても樹脂外装されたものではリード９ａ、９ｃ間のオン抵抗が大きく回路時定数が高くなって高速動作できないことがあった。
この原因を調べたところリード９ａとリード９ｃの間で直列接続されたアイランド８、コレクタ電極３、半導体ペレット１、エミッタ電極７、ワイヤ１１のそれぞれの間の接続部のうち、エミッタ電極７とワイヤ１１の間の抵抗値が大きく、しかもばらつきも大きいことが分かった。
ワイヤ１１自体のの抵抗値が１ｍΩ未満であるのに対して接続部の抵抗値は５０〜１００ｍΩと大きな値を示していた。
そのため図６に示すようにエミッタ電極７の平面形状を大きくし多数本（図示例では３本）のワイヤ１１ａ、１１ｂ、１１ｃをエミッタ電極７とリード９ｃの間で並列接続してエミッタ電極７での接触抵抗を小さくしている。
これにより半導体装置全体のオン抵抗を下げることが出来、高速動作が可能となった。
【０００３】
【発明が解決しようとする課題】
しかしながらこのようにエミッタ電極７を大きくしてワイヤ１１を多数本並列接続することによりオン抵抗の低減はできたがそのばらつきが大きくスイッチング動作させた場合、規格を外れるものがあって更なる改善が望まれていた。
この問題を改善するには並列接続されるワイヤ１１の本数を増加すればよいがワイヤの使用量が増大しコストが上昇するという問題もあった。
また高価な金線に代えて安価なアルミニウム線を用いることもできるがアルミニウムは金に比して電気抵抗が大きいため線径を太くせざるを得ず、エミッタ電極７を更に広くしなければならないという問題もあり直ちにワイヤの本数を増加させることはできなかった。
【０００４】
【課題を解決するための手段】
本発明は上記課題の解決を目的として提案されたもので、半導体ペレット上に形成された少なくとも一つの電極パッドに複数本のワイヤを電気的に接続した半導体装置において、上記半導体ペレット上に、電極パッド上での各ワイヤの接続位置を示す目合わせマークを形成したことを特徴とする半導体装置を提供する。
これにより、複数本のワイヤのそれぞれの接続位置の精度を高めることができ、半導体ペレット本体からエミッタ電極に集電された電流を各ワイヤに均等に配分することが出来、そのばらつきを抑えることができる。
【０００５】
【発明の実施の形態】
本発明による半導体装置は半導体ペレット上に形成された少なくとも一つの電極パッドに複数本のワイヤのそれぞれの接続位置を示す目合わせマークを形成したことを特徴とするが、この目合わせマークは、導電パッド上のワイヤの接続位置が、ワイヤの他端からみた半導体ペレットのオン抵抗が最小となる位置を示すように設定される。
また、半導体ペレット本体の表面を被覆する絶縁被膜の要部を開口させて目合わせマークを形成することができる。
さらにはワイヤとワイヤの間でワイヤの引き出し方向と平行に第１の目合わせマークを形成し、ワイヤ接続部の配列方向端部に第２の目合わせマークを形成することができる。
【０００６】
【実施例】
以下に本発明の実施例を図１から説明する。図において、図４乃至図６と同一物には同一符号を付し重複する説明を省略する。
図中、本発明による装置は主電流が流れるエミッタ電極７の周縁にこの電極７に接続される３本のワイヤ１１ａ、１１ｂ、１１ｃのそれぞれの一端の接続位置を示す目合わせマーク１３ａ、１３ｂ、１３ｃを形成した点で図６装置と明らかに相異する。
この目合わせマーク１３ａ、１３ｂ、１３ｃは絶縁被膜５を窓明けして絶縁被膜５と下地の色のコントラストで表示することができ、アルミニウムの蒸着膜で形成されたエミッタ電極７をこの窓明け部分に露呈させればコントラストを高めることができる。
またこの目合わせマーク１３ａ、１３ｂ、１３ｃの内、２つの目合わせマーク１３ａ、１３ｂは矩形状エミッタ電極７の長辺に配置されて、各ワイヤ１１ａ、１１ｂ、１１ｃに電極７上の電流密度がほぼ均等に分散するように各ワイヤ１１の間隔を指定し、残りの目合わせマーク１３ｃは短辺の中間に形成される。
半導体ペレット本体２内でエミッタ領域を突き抜けてエミッタ電極７に供給される電流はワイヤ１１に集中するため、ワイヤ１１接続部直下に電流が集中し、この接続部から離れた部分では電流はエミッタ電極７を面方向に移動してワイヤ１１に到る。
そのため、エミッタ領域内を通過する電流の密度が不均一となり、エミッタ電極７内の電流の移動経路によっても抵抗値が異なる。
そのため目合わせマーク１３ａ、１３ｂは絶縁被膜５に隠れた部分を含むエミッタ電極の形状や半導体ペレット本体の内部構造などを考慮して配列位置が設定される。 仮に図２点線で示すように均等に分割された３つの領域に、ワイヤ１１が位置ずれして接続された場合、各ワイヤ１１の接続状態が同じであっても、間隔が隔たっているワイヤ１１ａ、１１ｂ間の図示斜線部分はそれぞれのワイヤ１１ａ、１１ｂまでの距離が長くなり電気抵抗が上昇する。
このようにワイヤ１１の接続位置がずれることによって電気抵抗が変化する。
本発明では図３に示すように、目合わせマーク１３ａ、１３ｂによって分割された３つの領域内の目合わせマーク１３ｃで指定された位置にワイヤ１１ａ、１１ｂ、１１ｃを接続することによってエミッタ領域内の電流密度が均一になり、エミッタ電極７から各ワイヤ１１に流入する電流も一様にできるため、エミッタ電極７と各ワイヤ１１の接続抵抗を可及的に減少させそのばらつきを小さくできる。
このようにエミッタ電極７上での各ワイヤ１１の接続位置が正確に設定されるため、ワイヤボンディング位置を画像認識により自動設定する場合だけでなく、予めボンデイング位置を指定してこの指定データにより自動ボンデイングする場合でも、ワイヤの接続位置が正確に設定できそのばらつきがなく、エミッタ電極７から３本のワイヤ１１にほぼ均等に配分でき、接続抵抗のばらつきを抑えることが出来る。
具体的には外径寸法が５×６ｍｍ、エミッタ電極７の寸法が２．０×１．５ｍｍ、耐電圧４０Ｖの半導体ペレットのエミッタ電極７に直径３００μｍのアルミニウム線を３本接続して電流１ｍＡで動作させたとき、目合わせマークがない状態ではオン抵抗が５０〜１００ｍΩと、抵抗値が高い上、ばらつきが大きかったものが、目合わせマーク１３を形成し、この目合わせマーク１３で指定された位置にワイヤ１１を接続することにより、オン抵抗を６〜１１ｍΩに低減でき、しかもそのばらつきを抑えることができ、安定した高速スイッチング動作が可能な半導体装置を実現できた。
尚、本発明は上記実施例にのみ限定されるものではなく、例えばトランジスタだけでなくサイリスタなどスイッチング素子一般に適用できる。
また、目合わせマーク１３を絶縁被膜５の窓明けあるいは切り欠きなどにより形成するだけでなく、絶縁被膜５とは別に印刷やレーザ光による穿孔などによっても形成することが出来る。
【０００７】
【発明の効果】
以上のように本発明によれば、オン抵抗の低減を目的として半導体ペレットと外部リードとを複数本のワイヤで接続した半導体装置のオン抵抗を低減しさらにそのばらつきを抑えることが出来る。
【図面の簡単な説明】
【図１】 本発明の実施例を示す半導体装置の一部断面平面図
【図２】 従来のワイヤの接続状態を示す要部平面図
【図３】 本発明のワイヤの接続状態を示す要部平面図
【図４】 半導体装置の一例を示す側断面図
【図５】 半導体装置の一例を示す側断面図
【図６】 図４半導体装置のオン抵抗を低減する手段を説明する要部平面図
【符号の説明】
１ 半導体ペレット
７ 電極パッド
１１ａ ワイヤ
１１ｂ ワイヤ
１１ｃ ワイヤ
１３ａ 目合わせマーク
１３ｂ 目合わせマーク
１３ｃ 目合わせマーク[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device with reduced on-resistance as much as possible.
[0002]
[Prior art]
Electronic circuit devices that require high-speed operation, such as airbag control devices used as collision safety devices for automobiles, detect impacts when a collision occurs with an impact sensor, and operate the gas generator by this output to inflate the airbag. It supports the occupants who are about to jump forward due to the reaction of the collision to ensure safety.
A signal from the impact sensor is once inputted to a control circuit using a microcomputer to prevent malfunction, but a semiconductor switching element having a high pulse response speed is used to shorten the signal processing time as much as possible.
In addition, when operating the manipulator such as a joystick on the controller and the operation button to remotely control the controlled unit, the controlled unit can respond sensitively to the operation and the operation of the controlled unit Therefore, a high-speed semiconductor switching element is generally used for such a portion.
Such a high-speed semiconductor switching element needs to have a high pulse response speed of the element body, but operation in a state where the element body is packaged is also important.
An example of a transistor as a semiconductor switching element will be described with reference to FIGS.
In the figure, reference numeral 1 denotes a semiconductor pellet. A collector electrode 3 connected to a collector region is formed on one surface of a semiconductor pellet body 2 having a transistor element formed therein, and connected to a base region and an emitter region on the other surface. The conductive lands 2a and 2b are formed, and the portions of the conductive lands 2a and 2b are opened with a window and covered with an insulating film 5, and the portions of the conductive lands 2a and 2b exposed to the window are exposed to the base electrode 6 and the emitter electrode 7 respectively. Is forming.
8 is an island in which the semiconductor pellet 1 is mounted via an adhesive (not shown), 9 is a set of three leads, and in the example shown, one lead 9a is electrically connected to the island 8 and the other leads One end of each of 9 b and 9 c is arranged in the vicinity of the island 8.
Reference numerals 10 and 11 denote wires connecting the base electrode 6 and the emitter electrode 7 between the leads 9b and the leads 9c on the semiconductor pellet 1, respectively, and 12 denotes a resin covering the main part including the semiconductor pellet 1.
The semiconductor pellet 1 used in this semiconductor device has a high pulse response characteristic.
The wire 11 through which the main current flows is a wire having a sufficiently large diameter with respect to the operating current.
For example, when transmitting the output of a sensor or manipulator, a diameter of 25 μm is sufficient for a gold wire if the operating current value is 0.3 mA, and a diameter of 50 μm is sufficient for an aluminum wire.
By the way, the switching operation of the semiconductor device is completely conductive and interrupted, and the current is changed in the conductive region. The former has a drawback that the power consumption is small but the operation speed is slightly inferior, and the latter always has a current. Since it flows, power consumption is large, but it can operate at high speed.
On the other hand, in an environment where there is a large amount of external noise, such as an automobile, the signal is switched at the maximum amplitude to improve the reliability against external noise.
For this reason, even a semiconductor device operating at a small current is turned on / off, but even if a semiconductor pellet 1 that can operate at a sufficiently high speed is used, a resin-coated one has a large on-resistance between the leads 9a and 9c and a high circuit time constant. May not be able to operate at high speed.
As a result of investigating the cause, the emitter electrode 7 and the wire out of the connections between the island 8, the collector electrode 3, the semiconductor pellet 1, the emitter electrode 7 and the wire 11 connected in series between the lead 9a and the lead 9c. It was found that the resistance value between 11 was large and the variation was large.
While the resistance value of the wire 11 itself was less than 1 mΩ, the resistance value of the connection portion was as large as 50 to 100 mΩ.
Therefore, as shown in FIG. 6, the emitter electrode 7 is enlarged in plan view and a large number (three in the illustrated example) of wires 11 a, 11 b, and 11 c are connected in parallel between the emitter electrode 7 and the lead 9 c. The contact resistance is reduced.
As a result, the on-resistance of the entire semiconductor device can be lowered, and high-speed operation is possible.
[0003]
[Problems to be solved by the invention]
However, the on-resistance can be reduced by enlarging the emitter electrode 7 and connecting a number of wires 11 in parallel as described above. However, when the switching operation is greatly varied, there are some cases that deviate from the standard, and further improvement is possible. It was desired.
In order to improve this problem, the number of wires 11 connected in parallel may be increased, but there is also a problem that the amount of wires used increases and the cost increases.
In addition, an inexpensive aluminum wire can be used instead of an expensive gold wire. However, since aluminum has a larger electric resistance than gold, the wire diameter must be increased, and the emitter electrode 7 must be further widened. Due to this problem, the number of wires could not be increased immediately.
[0004]
[Means for Solving the Problems]
The present invention has been proposed for the purpose of solving the above problems. In a semiconductor device in which a plurality of wires are electrically connected to at least one electrode pad formed on a semiconductor pellet, an electrode is formed on the semiconductor pellet. Provided is a semiconductor device characterized in that an alignment mark indicating a connection position of each wire on a pad is formed.
As a result, the accuracy of the connection position of each of the plurality of wires can be increased, and the current collected from the semiconductor pellet body to the emitter electrode can be evenly distributed to each wire, thereby suppressing variations. it can.
[0005]
DETAILED DESCRIPTION OF THE INVENTION
The semiconductor device according to the present invention is characterized in that alignment marks indicating respective connection positions of a plurality of wires are formed on at least one electrode pad formed on a semiconductor pellet. The connection position of the wire on the pad is set so as to indicate a position where the on-resistance of the semiconductor pellet viewed from the other end of the wire is minimized.
Also, the alignment mark can be formed by opening the main part of the insulating coating covering the surface of the semiconductor pellet body.
Furthermore, a first alignment mark can be formed between the wires in parallel to the wire drawing direction, and a second alignment mark can be formed at the end of the wire connection portion in the arrangement direction.
[0006]
【Example】
An embodiment of the present invention will be described below with reference to FIG. In the figure, the same components as those in FIGS. 4 to 6 are denoted by the same reference numerals, and redundant description is omitted.
In the drawing, the apparatus according to the present invention is provided with alignment marks 13a, 13b, indicating the connection position of one end of each of three wires 11a, 11b, 11c connected to the electrode 7 on the periphery of the emitter electrode 7 through which the main current flows. It is clearly different from the apparatus of FIG. 6 in that 13c is formed.
The alignment marks 13a, 13b, and 13c can display the insulating coating 5 with a window and display the contrast of the insulating coating 5 and the color of the base, and the emitter electrode 7 formed of an aluminum deposition film can be displayed on the window opening portion. If it is exposed to the contrast, the contrast can be increased.
Of these alignment marks 13a, 13b and 13c, two alignment marks 13a and 13b are arranged on the long side of the rectangular emitter electrode 7, and the current density on the electrode 7 is set to each wire 11a, 11b and 11c. The interval between the wires 11 is designated so that the wires 11 are almost uniformly distributed, and the remaining alignment mark 13c is formed in the middle of the short side.
The current supplied to the emitter electrode 7 through the emitter region in the semiconductor pellet body 2 is concentrated on the wire 11, so that the current is concentrated immediately below the connecting portion of the wire 11. 7 is moved in the surface direction to reach the wire 11.
Therefore, the density of the current passing through the emitter region becomes non-uniform, and the resistance value varies depending on the current moving path in the emitter electrode 7.
Therefore, the alignment positions of the alignment marks 13a and 13b are set in consideration of the shape of the emitter electrode including the portion hidden in the insulating coating 5, the internal structure of the semiconductor pellet body, and the like. If the wires 11 are connected to three regions evenly divided as shown by the dotted lines in FIG. 2, the wires 11a are spaced apart from each other even if the connection state of the wires 11 is the same. , 11b, the hatched portion shown in the figure increases the distance to the respective wires 11a, 11b and increases the electrical resistance.
As described above, the electrical resistance is changed by shifting the connection position of the wire 11.
In the present invention, as shown in FIG. 3, the wires 11a, 11b, and 11c are connected to the positions specified by the alignment marks 13c in the three areas divided by the alignment marks 13a and 13b. Since the current density becomes uniform and the current flowing into each wire 11 from the emitter electrode 7 can be made uniform, the connection resistance between the emitter electrode 7 and each wire 11 can be reduced as much as possible to reduce the variation.
Thus, since the connection position of each wire 11 on the emitter electrode 7 is accurately set, not only when the wire bonding position is automatically set by image recognition, but the bonding position is specified in advance and the specified data is automatically set. Even in the case of bonding, the connection position of the wire can be set accurately and there is no variation, and it can be distributed almost evenly from the emitter electrode 7 to the three wires 11 and the variation in connection resistance can be suppressed.
Specifically, three aluminum wires having a diameter of 3 μm are connected to the emitter electrode 7 of a semiconductor pellet having an outer diameter of 5 × 6 mm, an emitter electrode of 2.0 × 1.5 mm, and a withstand voltage of 40 V, and a current of 1 mA. In the state where there is no alignment mark, when the on-resistance is 50 to 100 mΩ, the resistance value is high and the variation is large, the alignment mark 13 is formed and designated by the alignment mark 13. By connecting the wire 11 to the position, the on-resistance can be reduced to 6 to 11 mΩ, the variation can be suppressed, and a semiconductor device capable of stable high-speed switching operation can be realized.
The present invention is not limited to the above-described embodiments, and can be applied to general switching elements such as thyristors as well as transistors.
Further, the alignment mark 13 can be formed not only by opening or notching the insulating coating 5 but also by printing or drilling with a laser beam separately from the insulating coating 5.
[0007]
【The invention's effect】
As described above, according to the present invention, it is possible to reduce the on-resistance of the semiconductor device in which the semiconductor pellet and the external lead are connected by a plurality of wires for the purpose of reducing the on-resistance, and to further suppress the variation.
[Brief description of the drawings]
FIG. 1 is a partial cross-sectional plan view of a semiconductor device showing an embodiment of the present invention. FIG. 2 is a plan view of a main part showing a connection state of a conventional wire. FIG. 4 is a side sectional view showing an example of a semiconductor device. FIG. 5 is a side sectional view showing an example of a semiconductor device. FIG. 6 is a plan view of an essential part for explaining means for reducing on-resistance of the semiconductor device. [Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor pellet 7 Electrode pad 11a Wire 11b Wire 11c Wire 13a Alignment mark 13b Alignment mark 13c Alignment mark

Claims (5)

半導体ペレット上に形成された少なくとも一つの電極パッドに複数本のワイヤを電気的に接続した半導体装置において、
上記半導体ペレット上に、電極パッド上での各ワイヤの接続位置を示す目合わせマークを形成したことを特徴とする半導体装置。In a semiconductor device in which a plurality of wires are electrically connected to at least one electrode pad formed on a semiconductor pellet,
A semiconductor device characterized in that an alignment mark indicating a connection position of each wire on the electrode pad is formed on the semiconductor pellet. 一つの導電パッドに接続された複数本のワイヤの他端が共通接続され、目合わせマークが、ワイヤの他端からみた半導体ペレットのオン抵抗が最小となる接続位置を示すように形成されたことを特徴とする請求項１に記載の半導体装置。The other ends of a plurality of wires connected to one conductive pad are commonly connected, and the alignment mark is formed so as to indicate the connection position where the on-resistance of the semiconductor pellet viewed from the other end of the wire is minimized. The semiconductor device according to claim 1. 半導体ペレット本体の表面に形成した導電ランドをその主要部が露呈するように絶縁被膜にて被覆して導電ランドの露呈部で導電パッドを形成した半導体ペレットの絶縁被膜の要部を開口させて目合わせマークを形成したことを特徴とする請求項１に記載の半導体装置。The conductive land formed on the surface of the semiconductor pellet body is covered with an insulating film so that the main part is exposed, and the main part of the insulating film of the semiconductor pellet is formed by opening the conductive pad at the exposed part of the conductive land. The semiconductor device according to claim 1, wherein an alignment mark is formed. ワイヤとワイヤの間でワイヤの引き出し方向と平行に第１の目合わせマークを形成したことを特徴とする請求項１に記載の半導体装置。The semiconductor device according to claim 1, wherein a first alignment mark is formed between the wires in parallel with the wire drawing direction. ワイヤ接続部の配列方向端部に第２の目合わせマークを形成したことを特徴とする請求項４に記載の半導体装置。The semiconductor device according to claim 4, wherein a second alignment mark is formed at an end of the wire connection portion in the arrangement direction.
JP28662998A 1998-10-08 1998-10-08 Semiconductor device Expired - Fee Related JP3902342B2 (en)

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JP28662998A JP3902342B2 (en) 1998-10-08 1998-10-08 Semiconductor device

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JP4591886B2 (en) 2004-07-21 2010-12-01 ローム株式会社 Power supply circuit device using semiconductor device
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