JP3898649B2 - Plasma processing equipment - Google Patents

Plasma processing equipment Download PDF

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Publication number
JP3898649B2
JP3898649B2 JP2003038741A JP2003038741A JP3898649B2 JP 3898649 B2 JP3898649 B2 JP 3898649B2 JP 2003038741 A JP2003038741 A JP 2003038741A JP 2003038741 A JP2003038741 A JP 2003038741A JP 3898649 B2 JP3898649 B2 JP 3898649B2
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Prior art keywords
vacuum
plasma
inner cylinder
container
cylinder member
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JP2004247262A (en
Inventor
博 秋山
昭孝 牧野
勝次 亦野
陽助 唐島
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Description

【0001】
【発明の属する技術分野】
本発明はプラズマ処理装置にかかり、特にプラズマを均一にかつ安定に生成することのできるプラズマ処理装置に関する。
【0002】
【従来の技術】
真空処理室内にプラズマを発生させて試料の処理を行なうプラズマ処理装置においては、前記真空処理室の内壁等が直接プラズマに晒される場合、処理室内壁あるいは処理室を構成する部品が消耗する。また、この部品等の損耗に伴い処理室内に配置した試料は金属汚染される。この金属汚染に対しては、従来、処理室内にプラズマを囲むように誘電体製の内筒を設置し、処理室内壁をプラズマから保護している。
【0003】
このとき、誘電体製の内筒が真空処理室に対して偏芯して設置されるとプラズマを均一、あるいは軸対称に生成することが困難になる。
【0004】
特許文献1には、処理室内に誘電体性の内筒を設置する場合、処理室内にアース電位に接続した導電体製の円筒を設け、かつ、前記誘電体製の内筒と導電体製円筒の重なり部分の長さを10mm以上とすることにより、プラズマを均一あるいは軸対称に生成することが示されている。
【0005】
【特許文献1】
特開2000−208496号公報
【0006】
【発明が解決しようとする課題】
前述のように、アース電位に固定された導電体製の円筒を設け、かつ、前記誘電体製の内筒と導電体製の円筒の重なり部分の長さを10mm以上とすることにより、前記誘電体製の内筒が真空処理室に対して偏芯して設置した場合においても、プラズマを均一あるいは軸対称に生成することは可能である。しかしながら、誘電体製の内筒を真空処理室に対して偏芯して設置すると、前記誘電体製の内筒と導電体製の真空処理室内壁間の間隙を均一に保持することができない。前記間隙を均一に保持できない場合(例えば間隙寸法が所定値以下となる場合)には、この間隙に異常放電が発生し、プラズマ処理に悪影響を与える。
【0007】
本発明は、これらの問題点に鑑みてなされたもので、プラズマを均一あるいは軸対称に安定に生成して、試料面を均一に安定して加工することのできるプラズマ処理装置を提供する。
【0008】
【課題を解決するための手段】
本発明は、上記の課題を解決するために次のような手段を採用した。
【0009】
略円筒形状を有する導電材料製の真空処理容器と、この真空処理容器内に配置されその上面に試料を載置する試料台と、前記真空容器の内壁面と隙間を開けてこれを覆って配置された誘電体製の内筒部材と、前記真空容器内に取り付けられて配置され前記内筒部材がその上に載せられるアース部材とを備え、前記内筒部材の内側に生成したプラズマを用いて前記試料を処理するプラズマ処理装置であって、
前記アース部材は、前記真空処理容器の内壁面からこの真空処理容器内側に突出して前記内筒部材が載せられる突出部及びこの突出部の前部から上方に屈曲して延在し前記プラズマに接する屈曲部とを有し、
この屈曲部と前記真空容器内壁との間で前記屈曲部の上端より下方かつ前記突出部の上方に位置してこの真空容器内壁から突起した複数の突起部を有して、前記内筒部材が前記屈曲部と前記突起部との間に配置される。
【0010】
【発明の実施の形態】
以下、本発明の実施形態を添付図面を参照しながら説明する。図1は、本発明の実施形態にかかるプラズマ処理装置を説明する図である。図において、101は、例えば円筒状の導電体からなる真空処理容器である。102は磁気コイルであり、真空処理容器101内にECR(Electron Cyclotron Resonance)が成立する条件を満足する大きさの磁場(例えば16mT)を生成する。103は高周波電源であり、例えばUHF波(450MHz)の高周波を同軸導波管104を介してアンテナ105に供給する。アンテナ105は前記高周波を誘電体部材である石英板106を通して真空処理容器内に放射する。これにより真空容器内には電子サイクロトロン共鳴(ECR)が発生する。
【0011】
真空処理容器101内には、予めプロセスガスを所定圧力で導入してあり、前記電子サイクロトロン共鳴によりプラズマ化して、プラズマ107を生成する。プラズマ107により生成されるイオンあるいはラジカルは試料台108上に載置したウエハ等の試料109を照射して、エッチング処理を行なう。
【0012】
110は真空処理容器101の側壁内面側に配置した石英等の誘電体製内筒部材であり、処理容器101内壁面が直接プラズマに晒されないようにする。111はアース部材であり、真空処理容器内壁面から容器内方に突出した突出部111aおよび突出部先端から上方に屈曲する屈曲部111bを備え、前記突出部111a上に前記内筒部材110を載置する。また、アース部材の屈曲部111bおよび誘電体内筒部材110は互いに重なる部分(重なり部分)112を設ける。アース部材の屈曲部111bは真空処理容器101内に生成したプラズマ107に接し、接する部分のプラズマ電位を接地電位に固定する。これにより、プラズマの均一性あるいは軸対称性をより向上することができる。なお、アース部材111は、例えば円筒状の真空処理容器101の内周に沿って連続して形成することができる。また、内周に沿って略等間隔に複数箇所(例えば3箇所)設けることもできる。
【0013】
図2は、真空処理容器内に備えたアース部材付近の詳細を説明する図である。図において、201は真空処理容器101内面の前記屈曲部111bに対向する部分、すなわち、前記屈曲部111bの上端よりも下方でかつ突出部111aの上方部分に形成した突起部であり、円筒部材の偏りを止める偏り止め部材として機能する。この突起部201は、例えば円筒状の真空処理容器101の内周に沿って連続して形成することができる。また、内周に沿って略等間隔に複数箇所(例えば3箇所)設けることもできる。また、突起部201は真空処理容器101内面の前記重なり部分111bよりも上方に形成することができる。
【0014】
このように、前記突起部201を備えることにより、誘電体製内筒110を真空処理容器101に対して同心に設置することができる。また、真空処理容器101内壁面と内筒部材110との間隙を均一に保持することができる。これにより、プラズマを均一あるいは軸対称に生成することができる。また、内筒及び真空処理室内壁間の間隙を均一に保持することができる。これにより前記間隙に発生する異常放電を抑制することができ、試料(ウエハ)を安定して加工することができる。
【0015】
図3は、真空処理容器内に内筒部材を挿入配置する際の処理を説明する図である。図において、301は内筒部材110を真空容器101内に挿入配置した状態で搬送する際に使用する治具である。治具301は、真空処理容器101内面と内筒部材110外面の間隙を保持するための間隙保持部302を備える。
【0016】
まず、円筒部材110を真空容器101内に挿入配置した後、真空処理容器内面と内筒部材外面の間隙に略等間隔に複数(例えば3つ)の治具301を挿入し、この状態で円筒部材110を仮固定する。このとき前記各治具301は間隙保持部302の寸法(A)が略同一の治具を用いる。
【0017】
搬送後は、治具301を全て取り外した後、真空処理容器を組み立てる。これにより、真空処理容器101と内筒部材110との間隙を所定値に保持した状態で搬送することができる。
【0018】
【発明の効果】
以上説明したように本発明によれば、プラズマを均一あるいは軸対称に生成して、試料面を均一に安定して加工することのできるプラズマ処理装置を提供することができる。
【図面の簡単な説明】
【図1】本発明の実施形態にかかるプラズマ処理装置を説明する図である。
【図2】真空処理室内に備えたアース部材付近の詳細を説明する図である。
【図3】真空処理容器内に内筒部材を挿入配置して搬送する際の処理を説明する図である。
【符号の説明】
101 真空処理容器
102 磁気コイル
103 高周波電源
104 同軸導波管
105 アンテナ
106 石英板
107 プラズマ
108 試料台
109 試料
110 内筒部材
111 アース部材
112 重なり部分
201 突起部
301 治具
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus capable of generating plasma uniformly and stably.
[0002]
[Prior art]
In a plasma processing apparatus for processing a sample by generating plasma in a vacuum processing chamber, when the inner wall or the like of the vacuum processing chamber is directly exposed to plasma, parts of the processing chamber wall or the processing chamber are consumed. In addition, the sample placed in the processing chamber is contaminated with metal due to the wear of the components. Conventionally, with respect to this metal contamination, an inner cylinder made of a dielectric is provided so as to surround the plasma in the processing chamber to protect the processing chamber wall from the plasma.
[0003]
At this time, if the dielectric inner cylinder is installed eccentrically with respect to the vacuum processing chamber, it becomes difficult to generate plasma uniformly or axially symmetrically.
[0004]
In Patent Document 1, when a dielectric inner cylinder is installed in a processing chamber, a conductive cylinder connected to the ground potential is provided in the processing chamber, and the dielectric inner cylinder and the conductive cylinder are provided. It is shown that the plasma is generated uniformly or axially symmetrical by setting the length of the overlapping portion to 10 mm or more.
[0005]
[Patent Document 1]
Japanese Patent Laid-Open No. 2000-208496
[Problems to be solved by the invention]
As described above, by providing a conductive cylinder fixed to the ground potential and setting the length of the overlapping portion of the dielectric inner cylinder and the conductive cylinder to 10 mm or more, the dielectric Even when a body-made inner cylinder is installed eccentrically with respect to the vacuum processing chamber, it is possible to generate plasma uniformly or symmetrically. However, if the dielectric inner cylinder is installed eccentrically with respect to the vacuum processing chamber, the gap between the dielectric inner cylinder and the conductor vacuum processing chamber wall cannot be maintained uniformly. When the gap cannot be maintained uniformly (for example, when the gap dimension is a predetermined value or less), abnormal discharge occurs in the gap and adversely affects the plasma processing.
[0007]
The present invention has been made in view of these problems, and provides a plasma processing apparatus capable of stably generating plasma uniformly or axially symmetric and processing a sample surface uniformly and stably.
[0008]
[Means for Solving the Problems]
The present invention employs the following means in order to solve the above problems.
[0009]
A vacuum processing container made of a conductive material having a substantially cylindrical shape, a sample stage placed in the vacuum processing container and placing a sample on the upper surface thereof, and a gap between the inner wall surface of the vacuum container and a covering thereof. An inner cylinder member made of a dielectric material, and a grounding member mounted and disposed in the vacuum vessel, on which the inner cylinder member is placed, and using plasma generated inside the inner cylinder member A plasma processing apparatus for processing the sample,
The ground member protrudes from the inner wall surface of the vacuum processing container to the inside of the vacuum processing container and is bent upward from the front portion of the protrusion and the protrusion on which the inner cylinder member is placed, and contacts the plasma. A bent portion,
A plurality of protrusions protruding from the inner wall of the vacuum container located below the upper end of the bending part and above the protrusion between the bent part and the inner wall of the vacuum container; It arrange | positions between the said bending part and the said projection part.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a diagram illustrating a plasma processing apparatus according to an embodiment of the present invention. In the figure, reference numeral 101 denotes a vacuum processing container made of, for example, a cylindrical conductor. Reference numeral 102 denotes a magnetic coil, which generates a magnetic field (for example, 16 mT) having a magnitude that satisfies the condition for establishing ECR (Electron Cyclotron Resonance) in the vacuum processing vessel 101. Reference numeral 103 denotes a high-frequency power source that supplies, for example, a high-frequency UHF wave (450 MHz) to the antenna 105 via the coaxial waveguide 104. The antenna 105 radiates the high frequency into the vacuum processing container through the quartz plate 106 which is a dielectric member. As a result, electron cyclotron resonance (ECR) is generated in the vacuum chamber.
[0011]
A process gas is introduced into the vacuum processing vessel 101 at a predetermined pressure in advance, and is converted into plasma by the electron cyclotron resonance to generate plasma 107. Ions or radicals generated by the plasma 107 irradiate a sample 109 such as a wafer placed on the sample stage 108 to perform an etching process.
[0012]
Reference numeral 110 denotes an inner cylinder member made of a dielectric material such as quartz disposed on the inner surface of the side wall of the vacuum processing container 101 so that the inner wall surface of the processing container 101 is not directly exposed to plasma. Reference numeral 111 denotes a ground member, which includes a protruding portion 111a protruding inward from the inner wall surface of the vacuum processing vessel and a bent portion 111b bent upward from the tip of the protruding portion, and the inner cylinder member 110 is mounted on the protruding portion 111a. Put. The bent portion 111b of the ground member and the dielectric cylinder member 110 are provided with a portion (overlapping portion) 112 that overlaps each other. The bent portion 111b of the ground member is in contact with the plasma 107 generated in the vacuum processing container 101, and fixes the plasma potential of the contact portion to the ground potential. Thereby, the uniformity or axial symmetry of plasma can be further improved. The ground member 111 can be formed continuously along the inner periphery of the cylindrical vacuum processing vessel 101, for example. A plurality of locations (for example, 3 locations) can be provided at substantially equal intervals along the inner periphery.
[0013]
FIG. 2 is a diagram for explaining details of the vicinity of the ground member provided in the vacuum processing container. In the figure, 201 is a portion of the inner surface of the vacuum processing container 101 facing the bent portion 111b, that is, a protrusion formed below the upper end of the bent portion 111b and above the protruding portion 111a. It functions as an anti-bias member that stops the deviation. The protrusion 201 can be formed continuously along the inner periphery of the cylindrical vacuum processing vessel 101, for example. A plurality of locations (for example, 3 locations) can be provided at substantially equal intervals along the inner periphery. Further, the protruding portion 201 can be formed above the overlapping portion 111 b on the inner surface of the vacuum processing container 101.
[0014]
Thus, by providing the protrusion 201, the dielectric inner cylinder 110 can be installed concentrically with the vacuum processing vessel 101. Further, the gap between the inner wall surface of the vacuum processing container 101 and the inner cylinder member 110 can be kept uniform. Thereby, plasma can be generated uniformly or axisymmetrically. Further, the gap between the inner cylinder and the vacuum processing chamber wall can be kept uniform. Thereby, abnormal discharge generated in the gap can be suppressed, and the sample (wafer) can be processed stably.
[0015]
FIG. 3 is a view for explaining processing when the inner cylinder member is inserted and arranged in the vacuum processing container. In the figure, reference numeral 301 denotes a jig used when the inner cylinder member 110 is transported while being inserted and arranged in the vacuum vessel 101. The jig 301 includes a gap holding portion 302 for holding a gap between the inner surface of the vacuum processing container 101 and the outer surface of the inner cylinder member 110.
[0016]
First, after the cylindrical member 110 is inserted and arranged in the vacuum vessel 101, a plurality of (for example, three) jigs 301 are inserted into the gap between the inner surface of the vacuum processing vessel and the outer surface of the inner cylinder member at approximately equal intervals. The member 110 is temporarily fixed. At this time, each jig 301 uses a jig whose dimension (A) of the gap holding portion 302 is substantially the same.
[0017]
After transportation, all the jigs 301 are removed, and then the vacuum processing container is assembled. Thereby, it can convey in the state with which the clearance gap between the vacuum processing container 101 and the inner cylinder member 110 was hold | maintained to the predetermined value.
[0018]
【The invention's effect】
As described above, according to the present invention, it is possible to provide a plasma processing apparatus capable of generating plasma uniformly or axially symmetrically and processing a sample surface uniformly and stably.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a plasma processing apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating details of the vicinity of a ground member provided in a vacuum processing chamber.
FIG. 3 is a diagram illustrating a process when an inner cylinder member is inserted and arranged in a vacuum processing container and conveyed.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 101 Vacuum processing container 102 Magnetic coil 103 High frequency power supply 104 Coaxial waveguide 105 Antenna 106 Quartz plate 107 Plasma 108 Sample stand 109 Sample 110 Inner cylinder member 111 Ground member 112 Overlapping part 201 Projection part 301 Jig

Claims (3)

略円筒形状を有する導電材料製の真空処理容器と、この真空処理容器内に配置されその上面に試料を載置する試料台と、前記真空容器の内壁面と隙間を開けてこれを覆って配置された誘電体製の内筒部材と、前記真空容器内に取り付けられて配置され前記内筒部材がその上に載せられるアース部材とを備え、前記内筒部材の内側に生成したプラズマを用いて前記試料を処理するプラズマ処理装置であって、
前記アース部材は、前記真空処理容器の内壁面からこの真空処理容器内側に突出して前記内筒部材が載せられる突出部及びこの突出部の前部から上方に屈曲して延在し前記プラズマに接する屈曲部とを有し、
この屈曲部と前記真空容器内壁との間で前記屈曲部の上端より下方かつ前記突出部の上方に位置してこの真空容器内壁から突起した複数の突起部を有して、前記内筒部材が前記屈曲部と前記突起部との間に配置されるプラズマ処理装置。
A vacuum processing container made of a conductive material having a substantially cylindrical shape, a sample stage placed in the vacuum processing container and placing a sample on the upper surface thereof, and a gap between the inner wall surface of the vacuum container and a covering thereof. An inner cylinder member made of a dielectric material, and a grounding member mounted and disposed in the vacuum vessel, on which the inner cylinder member is placed, and using plasma generated inside the inner cylinder member A plasma processing apparatus for processing the sample,
The ground member protrudes from the inner wall surface of the vacuum processing container to the inside of the vacuum processing container and is bent upward from the front portion of the protrusion and the protrusion on which the inner cylinder member is placed, and contacts the plasma. A bent portion,
A plurality of protrusions protruding from the inner wall of the vacuum container located below the upper end of the bending part and above the protrusion between the bent part and the inner wall of the vacuum container; The plasma processing apparatus arrange | positioned between the said bending part and the said projection part.
略円筒形状を有する導電材料製の真空処理容器と、この真空処理容器内に配置されその上面に試料を載置する試料台と、前記真空容器の内壁面と隙間を開けてこれを覆って配置された誘電体製の内筒部材と、前記真空容器内に取り付けられその内壁の全周に配置されて前記内筒部材がその上に載せられるアース部材とを備え、前記内筒部材の内側に生成したプラズマを用いて前記試料を処理するプラズマ処理装置であって、
前記アース部材は、前記真空処理容器の内壁面からこの真空処理容器内側に突出して前記内筒部材が載せられる突出部及びこの突出部の前部から上方に屈曲して延在し前記プラズマに接する屈曲部とを有し、
この屈曲部と前記真空容器内壁との間で前記屈曲部の上端より下方かつ前記突出部の上方に位置してこの真空容器内壁から突起した複数の突起部を有して、前記内筒部材が前記屈曲部と前記突起部との間に配置されるプラズマ処理装置。
A vacuum processing container made of a conductive material having a substantially cylindrical shape, a sample stage placed in the vacuum processing container and placing a sample on the upper surface thereof, and a gap between the inner wall surface of the vacuum container and a covering thereof. An inner cylinder member made of a dielectric material, and a grounding member that is attached to the inside of the vacuum vessel and arranged on the entire circumference of the inner wall, and on which the inner cylinder member is placed. A plasma processing apparatus for processing the sample using generated plasma,
The ground member protrudes from the inner wall surface of the vacuum processing container to the inside of the vacuum processing container and is bent upward from the front portion of the protrusion and the protrusion on which the inner cylinder member is placed, and contacts the plasma. A bent portion,
A plurality of protrusions protruding from the inner wall of the vacuum container located below the upper end of the bending part and above the protrusion between the bent part and the inner wall of the vacuum container; The plasma processing apparatus arrange | positioned between the said bending part and the said projection part.
略円筒形状を有する導電材料製の真空処理容器と、この真空処理容器内に配置されその上面に試料を載置する試料台と、前記真空容器の内壁面と隙間をあけて該内壁面を覆って配置された誘電体製の内筒部材と、前記真空容器内に取り付けられその内壁の全周に配置されて前記内筒部材がその上に載せられるアース部材とを備え、前記内筒部材の内側に生成したプラズマを用いて前記試料を処理するプラズマ処理装置であって、
前記アース部材は、前記真空処理容器の内壁面からこの真空処理容器内側に突出して前記内筒部材が載せられる突出部及びこの突出部の前部から上方に屈曲して延在し前記プラズマに接する屈曲部とを有し、
この屈曲部と前記真空容器内壁との間で前記屈曲部の上端より下方かつ前記突出部の上方に位置してこの真空容器の内壁の全周に配置されこの内壁から突起した突起部を有して、前記内筒部材が前記屈曲部と前記突起部との間に配置されるプラズマ処理装置。
A vacuum processing container made of a conductive material having a substantially cylindrical shape, a sample stage disposed in the vacuum processing container and placing a sample on the upper surface thereof, and covering the inner wall surface with a gap between the inner wall surface of the vacuum container. An inner cylinder member made of a dielectric material, and a grounding member that is attached to the inside of the vacuum vessel and arranged on the entire circumference of the inner wall of the inner cylinder member. A plasma processing apparatus for processing the sample using plasma generated inside,
The ground member protrudes from the inner wall surface of the vacuum processing container to the inside of the vacuum processing container and is bent upward from the front portion of the protrusion and the protrusion on which the inner cylinder member is placed, and contacts the plasma. A bent portion,
Between the bent portion and the inner wall of the vacuum vessel, there is a protruding portion that is located on the entire circumference of the inner wall of the vacuum vessel and is located below the upper end of the bent portion and above the protruding portion. A plasma processing apparatus in which the inner cylinder member is disposed between the bent portion and the protruding portion.
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