JP3886405B2

JP3886405B2 - Solder bump forming method and solder bump forming apparatus

Info

Publication number: JP3886405B2
Application number: JP2002111189A
Authority: JP
Inventors: 武佐野; 務坂津; 秀章大倉
Original assignee: Ricoh Co Ltd
Current assignee: Ricoh Co Ltd
Priority date: 2002-04-12
Filing date: 2002-04-12
Publication date: 2007-02-28
Anticipated expiration: 2022-04-12
Also published as: JP2003309140A

Description

【０００１】
【発明の属する技術分野】
本発明は、はんだバンプ形成方法及びはんだバンプ形成装置に関し、詳細には、はんだバンプ形成用電極上に簡単かつ高精度に高さの揃ったはんだバンプを形成するはんだバンプ形成方法及びはんだバンプ形成装置に関する。
【０００２】
【従来の技術】
従来、半導体素子の電極は、一般に、ＡｌあるいはＡｌを主体とする合金からなっている。これらのＡｌを用いた電極表面には、非常に安定な自然酸化膜が形成されており、この酸化膜は、溶接ハンダとの濡れ性が悪いため、酸化膜が形成されている状態では、バンプ形成を行うことができない。
【０００３】
そこで、従来、転写用キャリア基板に一回目のはんだ層を形成して、ＬＤの電極と位置合わせし、はんだを溶接して電極上にはんだバンプを形成する。さらに二回目のはんだ層を形成した第二の転写用キャリア基板を用いて、一回目のはんだバンプにはんだ層を位置合わせして溶融し、所望の大きさの第二のはんだバンプを得るはんだバンプの接続方法が提案されている（特開平１０−２４２１４９号公報参照）。
【０００４】
【発明が解決しようとする課題】
しかしながら、上記公報記載の技術にあっては、はんだ濡れ性に劣る転写用キャリア基板上にはんだ層を形成し、そのはんだ層を溶融転写する工程を複数回行うことでばらつきの小さいはんだバンプ高さを得ていたため、複数回はんだ層を形成する必要があり、多くのバンプ形成工数を必要とし、作業性が悪いという問題があった。
【０００５】
また、はんだ濡れ性の劣る転写用キャリア基板上に、はんだ層を形成する方法としては、真空蒸着法等ドライプロセスにより形成する必要があるため、転写キャリアへのはんだ層形成コストが高くなるという問題があった。
【０００６】
そこで、本発明は、安価かつより一層高精度に高さの揃ったはんだバンプを形成することのできるはんだバンプ形成方法及びはんだバンプ形成装置を提供することを目的とする。
【００１７】
【課題を解決するための手段】
請求項１記載の発明のはんだバンプ形成方法は、はんだバンプ形成用電極基板に複数形成されているはんだバンプ形成用電極上に、所定高さのはんだバンプを形成するはんだバンプ形成方法において、複数のバンプ高さ補正用電極が形成されたバンプ高さ補正用電極基板の該バンプ高さ補正用電極の電極面積を前記はんだバンプ形成用電極の電極面積よりも小さく形成し、前記はんだバンプ形成用電極上に予めはんだバンプを形成した後、前記バンプ高さ補正用電極基板と前記はんだバンプ形成用電極基板とを、相対的な間隔を管理した状態で、所定間隔に接近させて、前記はんだバンプ形成用電極上のはんだバンプの過剰な量のはんだを前記バンプ高さ補正用電極に転写させて、前記複数のはんだバンプ形成用電極上のはんだバンプの高さを揃えることにより、上記目的を達成している。
【００１８】
上記構成によれば、はんだバンプ形成用電極基板に複数形成されているはんだバンプ形成用電極上に、所定高さのはんだバンプを形成するに際して、複数のバンプ高さ補正用電極が形成されたバンプ高さ補正用電極基板の該バンプ高さ補正用電極の電極面積をはんだバンプ形成用電極の電極面積よりも小さく形成し、はんだバンプ形成用電極上に予めはんだバンプを形成した後、バンプ高さ補正用電極基板とはんだバンプ形成用電極基板とを、相対的な間隔を管理した状態で、所定間隔に接近させて、はんだバンプ形成用電極上のはんだバンプの過剰な量のはんだをバンプ高さ補正用電極に転写させて、複数のはんだバンプ形成用電極上のはんだバンプの高さを揃えているので、簡単かつ容易に複数のはんだバンプ形成用電極上のはんだバンプの高さ、すなわち、バンダ量のバラツキを調整することができ、更に、はんだバンプ形成用電極からバンプ高さ補正用電極に転写されるはんだの転写量をより一層細かく制御し、安価かつより一層高精度に高さの揃ったはんだバンプを形成することができる。
【００１９】
請求項２記載の発明のはんだバンプ形成装置は、はんだバンプ形成用電極基板に複数形成されているはんだバンプ形成用電極上に、所定高さのはんだバンプを形成するはんだバンプ形成装置において、複数のバンプ高さ補正用電極が形成されたバンプ高さ補正用電極基板の該バンプ高さ補正用電極の電極面積を前記はんだバンプ形成用電極の電極面積よりも小さく形成して、前記バンプ高さ補正用電極基板と前記はんだバンプ形成用電極上に予めはんだバンプの形成された前記はんだバンプ形成用電極基板とを、相対的な間隔を管理した状態で、所定間隔に接近させて、前記はんだバンプ形成用電極上のはんだバンプの過剰な量のはんだを前記バンプ高さ補正用電極に転写させて、前記複数のはんだバンプ形成用電極上のはんだバンプの高さを揃えることにより、上記目的を達成している。
【００２０】
上記構成によれば、はんだバンプ形成用電極基板に複数形成されているはんだバンプ形成用電極上に、所定高さのはんだバンプを形成するに際して、複数のバンプ高さ補正用電極が形成されたバンプ高さ補正用電極基板の該バンプ高さ補正用電極の電極面積をはんだバンプ形成用電極の電極面積よりも小さく形成して、バンプ高さ補正用電極基板とはんだバンプ形成用電極上に予めはんだバンプの形成されたはんだバンプ形成用電極とを、相対的な間隔を管理した状態で、所定間隔に接近させて、はんだバンプ形成用電極上のはんだバンプの過剰な量のはんだをバンプ高さ補正用電極に転写させて、複数のはんだバンプ形成用電極上のはんだバンプの高さを揃えているので、簡単かつ容易に複数のはんだバンプ形成用電極上のはんだバンプの高さ、すなわち、バンダ量のバラツキを調整することができ、更に、はんだバンプ形成用電極からバンプ高さ補正用電極に転写されるはんだの転写量をより一層細かく制御し、安価かつより一層高精度に高さの揃ったはんだバンプを形成することができる
【００３９】
【発明の実施の形態】
以下、本発明の好適な実施の形態を添付図面に基づいて詳細に説明する。なお、以下に述べる実施の形態は、本発明の好適な実施の形態であるから、技術的に好ましい種々の限定が付されているが、本発明の範囲は、以下の説明において特に本発明を限定する旨の記載がない限り、これらの態様に限られるものではない。
【００４０】
図１〜図３は、本発明のはんだバンプ形成方法及びはんだバンプ形成装置の第１の実施の形態を示す図であり、図１は、本発明の第１の実施の形態のはんだバンプ形成方法及びはんだバンプ形成装置の適用されるはんだバンプ形成用電極基板の正面図、図２は、図１のはんだバンプ形成用電極基板上のはんだバンプの高さのバラツキをバンプ高さ補正用電極基板で補正している状態の正面図である。
【００４１】
本実施の形態のはんだバンプ形成方法及びはんだバンプ形成装置は、図１に示すように、まず、はんだバンプ形成用電極基板１０の各はんだ形成用電極１１上に、安価なはんだバンプ形成方法ではんだバンプ１２を形成した後、このはんだバンプ１２の高さのバラツキを、図２に示すように、バンプ高さ補正用電極基板２０を使用して、補正する。
【００４２】
すなわち、まず、図１に示すように、はんだバンプ形成用電極基板１０のはんだ形成用電極１１上に、はんだボール搭載工法またははんだメッキ工法等の安価なはんだバンプ形成方法で、はんだバンプ１２を形成する。
【００４３】
このように安価なはんだバンプ形成方法ではんだバンプ１２を形成すると、図１に示すように、はんだ形成用電極１１上に形成されるはんだバンプ１２は、その高さにバラツキが発生し、高精度なはんだバンプを形成することができない。
【００４４】
そこで、本実施の形態のはんだバンプ形成方法及びはんだバンプ形成装置は、図２に示すように、はんだバンプ１２の高さのバラツキを、バンプ高さ補正用電極基板２０を使用して、補正する。
【００４５】
すなわち、バンプ高さ補正用電極基板２０には、図２に示すように、複数のバンプ高さ補正用電極２１が形成されており、このバンプ高さ補正用電極２１は、その面積が、はんだ形成用電極基板１０に形成されているはんだ形成用電極１１の面積よりも所定量小さく形成されている。
【００４６】
そして、上記はんだバンプ形成用電極基板１０の各はんだバンプ形成用電極１１上に形成されたはんだバンプ１２を溶融状態とし、バンプ高さ補正用電極２１とはんだバンプ１２とのギャップ（間隔）を管理した状態で、バンプ高さ補正用電極基板２０をはんだバンプ形成用電極基板１０に所定間隔まで近づける。
【００４７】
このとき、はんだバンプ高さの高いはんだバンプ１２とバンプ高さ補正用電極２１との距離がはんだバンプ高さの低いはんだバンプ１２とバンプ高さ補正用電極２１との距離よりも短いため、はんだバンプ高さの高いはんだバンプ１２の過剰なはんだ３０のみが、バンプ高さ補正用電極２１に接触し、当該はんだバンプ高さの高いはんだバンプ１２のはんだ３０が、バンプ高さ補正電極２１に濡れるとともにはんだバンプ高さの高いはんだバンプ１２の過剰なはんだ３０がバンプ高さ補正電極２１に転写される。
【００４８】
この場合、はんだバンプ１２の高さ補正は、はんだの酸化を防止するために、窒素雰囲気中にて実施することが望ましい。
【００４９】
そして、バンプ高さ補正用電極２１の面積をはんだバンプ形成用電極１１の面積よりも小さくしているので、バンプ高さ補正用電極２１へのはんだの転写量を少なくし、はんだバンプ高さの制御を精度よく行うことができる。
【００５０】
例えば、はんだバンプ形成用電極１１の面積が１００μｍφである場合、バンプ高さ補正用電極２１の面積も１００μｍφとすると、必要以上にはんだの転写が発生しやすく、はんだバンプ高さが低くなりすぎるおそれがある。
【００５１】
ところが、はんだバンプ形成用電極１１の面積が１００μｍφである場合、バンプ高さ補正用電極２１の面積を５０μｍφとすると、はんだの転写量が、バンプ高さ補正用電極２１の電極面積により制限され、安定して精度よくはんだの転写除去を行うことができる。
【００５２】
そして、この場合、バンプ高さ補正電極２１の面積を小さくすると、はんだ転写量を少なく抑えることができ、バンプ高さ補正用電極２１の面積を徐々に小さくすることにより、転写効率の向上とはんだバンプの高精度な形状制御を行うことができる。
【００５３】
また、はんだバンプ形成用電極１１とバンプ高さ補正用電極２１とのギャップを徐々に狭くすると、はんだバンプ高さのばらつきを補正することができるとともに、バンダバンプ１２のバンプ高さを所定のバンプ高さに形成することができる。
【００５４】
このように、本実施の形態においては、はんだバンプ形成用電極基板１０に複数形成されているはんだバンプ形成用電極１１上に、所定高さのはんだバンプ１２を形成するに際して、はんだバンプ形成用電極１１上に予めはんだバンプ１２を形成した後、複数のバンプ高さ補正用電極２１の形成されたバンプ高さ補正用電極基板２０とはんだバンプ形成用電極基板１０とを、相対的な間隔（ギャップ）を管理した状態で、所定間隔に接近させて、はんだバンプ形成用電極１１上のはんだバンプ１２の過剰な量のはんだ３０をバンプ高さ補正用電極２１に転写させて、複数のはんだバンプ形成用電極１１上のはんだバンプ１２の高さを揃えている。
【００５５】
したがって、簡単かつ容易に複数のはんだバンプ形成用電極１１上のはんだバンプ１２の高さ、すなわち、バンダ量のバラツキを調整することができ、安価かつ高精度に高さの揃ったはんだバンプ１２を形成することができる。
【００５６】
また、本実施の形態においては、バンプ高さ補正用電極２１の電極面積を、はんだバンプ形成用電極１１の電極面積よりも小さく形成している。
【００５７】
したがって、はんだバンプ形成用電極１１からバンプ高さ補正用電極２１に転写されるはんだ３０の転写量を細かく制御することができ、安価かつより一層高精度に高さの揃ったはんだバンプ１２を形成することができる。
【００５８】
さらに、本実施の形態においては、バンプ高さ補正用電極２１の電極面積を、はんだバンプ形成用電極１１の電極面積よりも小さく形成するとともに、当該バンプ高さ補正用電極２１の電極面積を徐々に小さくして、はんだバンプ形成用電極１１上の過剰な量のはんだ３０を当該徐々に小さくなるはんだバンプ高さ補正用電極２１に転写させている。
【００５９】
したがって、はんだバンプ形成用電極１１からバンプ高さ補正用電極２１に転写されるはんだ３０の転写量をより一層細かく制御することができ、安価かつより一層高精度に高さの揃ったはんだバンプ１２を形成することができる。
【００６０】
また、本実施の形態においては、バンプ高さ補正用電極基板２０とはんだバンプ形成用電極基板１０との間隔を徐々に狭めて、はんだバンプ形成用電極１１上の過剰な量のはんだ３０をはんだバンプ高さ補正用電極２１に転写させている。
【００６１】
したがって、はんだバンプ形成用電極１１からバンプ高さ補正用電極２１に転写されるはんだの転写量をより一層細かく制御することができ、安価かつより一層高精度に高さの揃ったはんだバンプ１２を形成することができる。
【００６２】
そして、本実施の形態の場合、バンプ高さ補正用電極基板２０のバンプ高さ補正用電極２１の形成面に、図３に示すように、フラックス４０を供給してもよい。
【００６３】
すなわち、図３に示すように、はんだ３０の転写前に、バンプ高さ補正用電極基板２０のバンプ高さ補正用電極２１の形成されている面に、フラックス４０を供給する。このようにすると、バンプ高さ補正用電極２１へのはんだ濡れ性を向上させることができる。
【００６４】
例えば、はんだバンプ形成用電極１１にフラックスを供給した後、バンプ高さ補正用電極２１を接触させると、はんだバンプ形成用電極１１上の表面張力が低下するため、バンプ高さ補正用電極２１へはんだバンプのほとんどが転写されてしまう現象が発生する。
【００６５】
一方、バンプ高さ補正用電極基板２０のバンプ高さ補正用電極２１の形成されている面に、フラックス４０を供給すると、はんだバンプ１２へのフラックス供給を必要最低限に抑えることができ、はんだバンプ形成用電極１１上の表面張力低下を防止することができる。
【００６６】
このフラックス４０をバンプ高さ補正用電極基板２０に供給する方式としては、フラックス４０の塗布量を少なく抑える上で、スプレーフラクサ方式が望ましい。
【００６７】
このようにすると、バンプ高さ補正用電極２１へのはんだ濡れ性を向上させることができるとともに、はんだバンプ形成用電極１１側のはんだ表面張力の低減を抑えることができ、安定してはんだバンプ１２の形成を制御して、安価かつより一層高精度に高さの揃ったはんだバンプ１２を形成することができる。
【００６８】
図４は、本発明のはんだバンプ形成方法及びはんだバンプ形成装置の第２の実施の形態の適用されたはんだバンプ形成装置５０の正面概略構成図である。
【００６９】
なお、本実施の形態の説明においては、上記第１の実施の形態と同様の構成部分には、同一の符号を付して、その詳細な説明を省略する。
【００７０】
図４において、はんだバンプ形成装置５０は、バンプ形成用電極加熱装置５１、バンプ高さ補正用電極５２が多数形成されたバンプ高さ補正用電極ロール板５３、バンプ高さ補正用電極ロール板５３を送り出す送り出しローラ５４、バンプ高さ補正用電極ロール板５３を巻き取る巻き取りローラ５５、バンプ高さ補正用電極ロール板５３を予備加熱するバンプ高さ補正用電極予備加熱装置５６及びバンプ高さ補正用電極ロール板５３にフラックス５７を供給するフラックス供給装置５８等を備えている。
【００７１】
バンプ形成用電極加熱装置５１上には、上記第１の実施の形態と同様のはんだバンプ形成用電極基板１０が載置され、はんだバンプ形成用電極基板１０のはんだバンプ形成用電極１１上には、安価なはんだバンプ形成方法ではんだバンプ１２が形成されている。
【００７２】
バンプ形成用電極加熱装置５１は、はんだバンプ形成用電極基板１０のはんだバンプ形成用電極１１上に形成されているはんだバンプ１２を常時当該はんだバンプ１２が溶融する温度まで加熱し、はんだ転写を容易なものとする。
【００７３】
バンプ高さ補正用電極ロール板５３は、ロール状に送り出しローラ５４に巻き付けられており、この送り出しローラ５４からバンプ形成用電極加熱装置５１上のはんだバンプ形成用電極基板１０の上部を通って、所定のテンションがかけられた状態で、巻き取りローラ５５に巻き取られる。
【００７４】
フラックス供給装置５８は、送り出しローラ５４の近傍に配設されており、送り出しローラ５４から巻き取りローラ５５に送り出されるバンプ高さ補正用電極ロール板５３のバンプ高さ補正用電極５２の形成面にフラックス５７を供給して、はんだの濡れ性及び適度なはんだボールの酸化防止を行う。
【００７５】
バンプ高さ補正用電極予備加熱装置５６は、送り出しローラ５４から巻き取りローラ５５に巻き取られるバンプ高さ補正用電極ロール板５３のはんだバンプ形成用電極基板１０とは反対側の面に配設されており、１００℃以上であって、バンプ高さ補正用電極ロール板５３に供給されたフラックス５７が活性力を失わない程度の温度にバンプ高さ補正用電極ロール板５３を予備加熱する。
【００７６】
このはんだバンプ形成装置５０は、バンプ形成用電極加熱装置５１の上面に、そのバンプ形成用電極１１上にはんだバンプ１２の形成されたはんだバンプ形成用電極基板１０が載置され、このはんだバンプ１２は、上述のように、その高さにバラツキが発生している。
【００７７】
そして、はんだバンプ形成装置５０は、バンプ高さ補正用電極ロール板５３とバンプ形成用電極基板１０とのギャップ、具体的には、バンプ高さ補正用電極ロール板５３上のバンプ高さ補正用電極５２とバンプ形成用電極基板１０のバンプ形成用電極１１上のはんだバンプ１２とのギャップを高精度に管理しつつ、バンプ高さ補正用電極ロール板５３をバンプ高さ補正用電極予備加熱装置５６で予備加熱した状態で、バンプ高さ補正用電極板５３を送り出しローラ５４から巻き取りローラ５５に巻き取って、所定速度でバンプ形成用電極基板１０上を移動させる。
【００７８】
このとき、バンプ高さ補正用電極ロール板５３のバンプ高さ補正用電極５２の形成されている面に、フラックス５７を供給して、はんだの濡れ性及び適度なはんだボールの酸化防止を行う。
【００７９】
このようにして、バンプ高さ補正用電極ロール板５３をバンプ形成用電極基板１０と所定のギャップを管理しつつ移動させると、バンプ形成用電極基板１０のバンプ形成用電極１１上のはんだバンプ１２の過剰はんだが、バンプ高さ補正用電極ロール板５３のバンプ高さ補正用電極５２に転写され、バンプ形成用電極１１上のはんだバンプ１２が精度よく均一な高さに補正される。
【００８０】
そして、このとき、バンプ高さ補正用電極予備加熱装置５６でバンプ高さ補正用電極ロール板５３をバンプ高さ補正用電極ロール板５３に供給されたフラックス５７が活性力を失わない程度の温度にバンプ高さ補正用電極ロール板５３を予備加熱しているため、バンプ形成用電極１１上のはんだバンプ１２の過剰はんだを、効率よくバンプ高さ補正用電極ロール板５３のバンプ高さ補正用電極５２に転写することができる。
【００８１】
すなわち、バンプ高さ補正用電極ロール板５３を予備加熱しないと、はんだ濡れまでに時間がかかり、フラックス５７がバンプ形成用基板１０の過熱により活性力が落ちてくるため、バンプ高さ補正用電極５２上にツララ状のはんだが形成されてしまう。
【００８２】
一方、バンプ高さ補正用電極ロール板５３の予備加熱温度が高すぎると、フラックス５７の活性力がなくなり、はんだ濡れ性が低下するとともに、ツララ状のはんだが形成されてしまう。
【００８３】
ところが、本実施の形態では、バンプ高さ補正用電極予備加熱装置５６でバンプ高さ補正用電極ロール板５３をバンプ高さ補正用電極ロール板５３に供給されたフラックス５７が活性力を失わない程度の温度にバンプ高さ補正用電極ロール板５３を予備加熱しているため、バンプ形成用電極１１上のはんだバンプ１２の過剰はんだを、効率よくバンプ高さ補正用電極ロール板５３のバンプ高さ補正用電極５２に転写することができる。そして、この予備加熱温度としては、１００℃〜１７０℃が望ましい。
【００８４】
このように、本実施の形態においては、バンプ高さ補正用電極基板をロール状のバンプ高さ補正用電極ロール板５３とし、バンプ高さ補正用電極ロール板５３の表面にバンプ高さ補正用電極５２を複数形成して、当該バンプ高さ補正用電極ロール板５３を、所定方向に回転させつつ、はんだバンプ形成用電極基板１０との相対的な間隔を管理した状態で、所定間隔に接近させて、はんだバンプ形成用電極１１上のはんだバンプ１２の過剰な量のはんだをバンプ高さ補正用電極５２に転写させている。
【００８５】
したがって、はんだバンプ形成用電極１１からバンプ高さ補正用電極５２により簡単にかつ連続的に過剰な量のはんだを転写させることができ、より一層安価かつ高精度に高さの揃ったはんだバンプ１２を形成することができる。
【００８６】
また、本実施の形態においては、バンプ高さ補正用電極ルール板５３のバンプ高さ補正用電極５２の形成されている面に、フラックス５７を塗布して、当該バンプ高さ補正用電極基板５３とはんだバンプ形成用電極基板１０とを接近させている。
【００８７】
したがって、バンプ高さ補正用電極５２へのはんだ濡れ性を向上させることができるとともに、はんだバンプ形成用電極１１側のはんだ表面張力の低減を抑えることができ、安定してはんだバンプ１２の形成を制御して、安価かつより一層高精度に高さの揃ったはんだバンプ１２を形成することができる。
【００８８】
さらに、本実施の形態においては、少なくともはんだバンプ形成用電極１１上のはんだバンプ１２の過剰な量のはんだをバンプ高さ補正用電極５２に転写する期間は、バンプ形成用電極基板１０を、はんだバンプ形成用電極１１上のはんだバンプ１２の溶融温度までバンプ形成用電極加熱装置５１で加熱し、バンプ高さ補正用電極ロール板５３を、１００℃以上であって、当該バンプ高さ補正用電極５２に塗布されているフラックス５７が活性力を維持する温度範囲に、バンプ高さ補正用電極予備加熱装置５６で予備加熱している。
【００８９】
したがって、はんだバンプ形成用電極１１からバンプ高さ補正用電極５２へのはんだの転写性を向上させることができるとともに、バンプ高さ補正用電極５２上にツララ状のはんだが形成されることを防止することができ、安価かつより一層高精度に高さの揃ったはんだバンプ１２を形成することができる。
【００９０】
図５は、本発明のはんだバンプ形成方法及びはんだバンプ形成装置の第３の実施の形態の適用されたはんだバンプ形成装置６０の正面概略構成図である。
【００９１】
なお、本実施の形態の説明においては、上記第１の実施の形態と同様の構成部分には、同一の符号を付して、その詳細な説明を省略する。
【００９２】
図５において、はんだバンプ形成装置６０は、バンプ形成用電極加熱装置６１、バンプ高さ補正用電極６２が多数形成されているバンプ高さ補正用電極ローラ６３、バンプ高さ補正用電極ローラ６３にフラックス６４を供給するフラックス供給装置（フラックス塗布手段）６５、はんだ除去装置（除去手段）６６、電極ローラ洗浄機（洗浄手段）６７等を備えている。
【００９３】
バンプ形成用電極加熱装置６１上には、上記第１の実施の形態と同様のはんだバンプ形成用電極基板１０が載置され、はんだバンプ形成用電極基板１０のはんだバンプ形成用電極１１上には、安価なはんだバンプ形成方法ではんだバンプ１２が形成されている。
【００９４】
バンプ形成用電極加熱装置６１は、はんだバンプ形成用電極基板１０のはんだバンプ形成用電極１１上に形成されているはんだバンプ１２を常時当該はんだバンプ１２が溶融する温度まで、加熱し、はんだの転写を容易なものとする。
【００９５】
はんだ高さ補正用電極ローラ６３は、ローラ状に形成されており、表面の基板にバンプ高さ補正用電極６２が多数形成されている。はんだ高さ補正用電極ローラ６３は、バンプ形成用電極加熱装置６１上のはんだバンプ形成用電極基板１０の上部に配設されており、図５に矢印で示す反時計方向に回転される。
【００９６】
このはんだ高さ補正用電極ローラ６３のはんだ高さ補正用電極６２は、その電極面積が、はんだバンプ形成用電極基板１０のはんだバンプ形成用電極１１の電極面積よりも小さく形成されている。
【００９７】
フラックス供給装置６５は、はんだ高さ補正用電極ローラ６３の近傍であって、バンプ形成用電極加熱装置６１上のはんだバンプ形成用電極基板１０よりもはんだ高さ補正用電極ローラ６３の回転方向に手前側に配設されており、当該はんだ高さ補正用電極ローラ６３の表面にフラックス６４を供給して、はんだの濡れ性及び適度なはんだボールの酸化防止を行う。
【００９８】
はんだ除去装置６６は、はんだ高さ補正用電極ローラ６３のはんだ高さ補正用電極６２上のはんだ７０を除去する。このはんだ除去装置６６によるはんだ高さ補正用電極６２上からのはんだの除去方法は、例えば、はんだ形成用電極１１上からはんだ高さ補正用電極ローラ６３のはんだ高さ補正用電極６２に転写されたはんだ７０を、回転研磨により機械的に除去する方法、はんだ濡れ性の良い細線ワイヤを加熱した状態で接触させて除去する方法または加熱溶融状態ではんだ７０を吸い取って除去する方法等を用いることができるが、これらの方法に限るものではない。
【００９９】
電極ローラ洗浄機６７は、溶剤を含浸させた研磨テープ６８と当該研磨テープ６８をはんだ高さ補正用電極ローラ６３に押しつけるローラ６９等を備えており、ローラ６９により研磨テープ６８をはんだ高さ補正用電極ローラ６３に押しつけて、フラックス残さ等を除去する。
【０１００】
このはんだバンプ形成装置６０は、バンプ形成用電極加熱装置６１の上面に、そのバンプ形成用電極１１上にはんだバンプ１２の形成されたはんだバンプ形成用電極基板１０が載置され、このはんだバンプ１２は、上述のように、その高さにバラツキが発生している。
【０１０１】
そして、はんだバンプ形成装置６０は、バンプ高さ補正用電極ローラ６３とバンプ形成用電極基板１０とのギャップ（間隔）、具体的には、バンプ高さ補正用電極ローラ６３上のバンプ高さ補正用電極６２とバンプ形成用電極基板１０のバンプ形成用電極１１上のはんだバンプ１２とのギャップを高精度に管理しつつ、バンプ高さ補正用電極ローラ６３を図５の矢印で示す反時計方向に回転させながら、例えば、図５に矢印で示す方向に、所定速度でバンプ形成用電極基板１０上を、そのはんだ高さ補正用電極６２を移動させる。
【０１０２】
このとき、バンプ高さ補正用電極ローラ６３のバンプ高さ補正用電極６２の形成されている表面に、フラックス供給装置６４からフラックス６４を供給して、はんだの濡れ性及び適度なはんだボールの酸化防止を行う。
【０１０３】
このようにして、バンプ高さ補正用電極ローラ６３をバンプ形成用電極基板１０と所定のギャップを管理しつつ回転させると、バンプ形成用電極基板１０のバンプ形成用電極１１上のはんだバンプ１２の過剰はんだが、バンプ高さ補正用電極ローラ６３のバンプ高さ補正用電極６２に転写され、バンプ形成用電極１１上のはんだバンプ１２が精度よく均一な高さに補正される。
【０１０４】
このように、本実施の形態によれば、バンプ高さ補正用電極ローラ６３の回転に伴って、当該バンプ高さ補正用電極ローラ６３のバンプ高さ補正用電極６２の形成されている面へのフラックス６４の塗布、はんだバンプ形成用電極１１からはんだ高さ補正用電極６２に転写されたはんだ７０の除去及び当該はんだ７０の除去されたはんだ高さ補正用電極６２の洗浄、を当該バンプ高さ補正用電極ローラ６３の近傍であって、回転方向に沿って順次配設されたフラックス供給装置６５、はんだ除去装置６６及び電極ローラ洗浄機６７で順次処理している。
【０１０５】
したがって、フラックス６４の塗布処理、はんだ高さ補正用電極６２上のはんだ７０の除去処理及びはんだ高さ補正用電極６２の洗浄処理を連続的に行って、より一位層効率的にかつコンパクトにはんだバンプ１２の高さ調整処理を行うことができ、より一層安価かつより一層高精度に高さの揃ったはんだバンプ１２を形成することができる。
【０１０６】
図６は、本発明のはんだバンプ形成方法及びはんだバンプ形成装置の第４の実施の形態の適用されたはんだバンプ形成用電極基板８０とはんだ供給用基板９０の概略正面図である。
【０１０７】
図６において、はんだバンプ形成用電極基板８０の表面には、はんだバンプ形成用電極８１が多数形成されており、このはんだバンプ形成用電極８１上に、はんだ供給用基板９０を用いて、はんだバンプ８２が形成される。
【０１０８】
はんだ供給用基板９０の表面には、多数のはんだ供給用電極９１が形成されており、はんだ供給用電極９１は、その電極面積がはんだバンプ形成用電極８１上の電極面積に比較して、相対的に小さく形成されている。
【０１０９】
はんだ供給用基板９０は、はんだ供給用電極９１上に供給された供給用はんだ９２をはんだバンプ形成用電極基板８０のはんだバンプ形成用電極８１上に供給し、はんだバンプ形成用電極８１上にはんだバンプ８２を形成する。
【０１１０】
このはんだ供給用電極９１上への供給用はんだ９２の供給は、例えば、はんだメッキやはんだペースト印刷等で行うことができる。
【０１１１】
このはんだ供給用電極基板９０を用いてはんだバンプ形成用電極基板８０のはんだバンプ形成用電極８１上にはんだバンプ８２を形成するには、まず、はんだバンプ形成用電極８１上に、例えば、はんだメッキやはんだペースト印刷等の方法で供給用はんだ９２を供給し、はんだバンプ形成用電極基板８０とはんだ供給用電極基板９０とのギャップ（間隔）、具体的には、はんだバンプ形成用電極基板８０のはんだバンプ形成用電極８１とはんだ供給用電極基板９０のはんだ供給用電極９１とのギャップを精度よく管理して近づけ、はんだ供給用電極９１上の供給用はんだ９２をはんだバンプ形成用電極８１上に転写する。
【０１１２】
このとき、はんだ供給用電極９１の電極面積が、はんだバンプ形成用電極８１よりも小さく形成されているため、はんだ供給用電極９１上への供給用はんだ９２の供給量にばらつきがあっても、はんだバンプ形成電極８１に転写されて、はんだバンプ８２となる際には、そのばらつきが相対的に小さくなる。
【０１１３】
そして、はんだ供給用電極９１からはんだバンプ形成用電極８１へのはんだ供給量を高精度に制御するためには、例えば、はんだバンプ形成用電極基板８０とはんだ供給用基板９０を所定方向に相対移動させて、当該相対移動方向に対して、はんだ供給用電極９１の電極面積を徐々に小さくすると、供給用はんだ９２のはんだバンプ形成用電極８１への転写供給効率を向上させることができるとともに、はんだバンプの形状精度を向上させることができる。
【０１１４】
このように、本実施の形態のはんだバンプ形成方法は、はんだバンプ形成用電極基板８０に複数形成されているはんだバンプ形成用電極８１上に、所定高さのはんだバンプ８２を形成するに際して、はんだバンプ形成用電極８１の電極面積よりも小さい電極面積のはんだ供給用電極９１が多数形成されたはんだ供給用電極基板９０の当該はんだ供給用電極９１上に供給用はんだ９２を予め形成し、当該はんだ供給用電極基板９０とはんだバンプ形成用電極基板８０との間隔を所定間隔（ギャップ）に管理して、はんだ供給用電極９１上の供給用はんだ９２をはんだバンプ形成用電極８１に転写供給し、はんだバンプ形成用電極８１上にはんだバンプ８２を形成している。
【０１１５】
したがって、簡易な方法ではんだ供給用電極９１上に形成した供給用はんだ９２を表面張力を利用してはんだバンプ形成用電極８１上に転写することができ、安価かつ高精度に高さの揃ったはんだバンプ８２を形成することができる。
【０１１６】
また、本実施の形態においては、はんだ供給用電極基板９０のはんだ供給用電極９１の電極面積を、徐々に小さくして、供給用はんだ９２をはんだバンプ形成用電極８１に転写供給して、はんだバンプ形成用電極８１上にはんだバンプ８２を形成している。
【０１１７】
したがって、簡易な方法ではんだ供給用電極９１上に形成した供給用はんだ９２を表面張力を利用してはんだバンプ形成用電極８１上により精度よく転写することができ、安価かつより一層高精度に高さの揃ったはんだバンプ８２を形成することができる。
【０１１８】
以上、本発明者によってなされた発明を好適な実施の形態に基づき具体的に説明したが、本発明は上記のものに限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能であることはいうまでもない。
【０１１９】
【発明の効果】
上記したように本発明に係るはんだバンプ形成方法及びはんだバンプ形成装置によれば、安価かつより一層高精度に高さの揃ったはんだバンプを形成することができる。
【図面の簡単な説明】
【図１】本発明のはんだバンプ形成方法及びはんだバンプ形成装置の第１の実施の形態のはんだバンプ形成方法及びはんだバンプ形成装置の適用されるはんだバンプ形成用電極基板の正面図。
【図２】図１のはんだバンプ形成用電極基板上のはんだバンプの高さのバラツキをバンプ高さ補正用電極基板で補正している状態の正面図。
【図３】図２のバンプ高さ補正用電極基板のバンプ高さ補正用電極の形成面にフラックスを供給した状態の正面図。
【図４】本発明のはんだバンプ形成方法及びはんだバンプ形成装置の第２の実施の形態の適用されたはんだバンプ形成装置の正面概略構成図。
【図５】本発明のはんだバンプ形成方法及びはんだバンプ形成装置の第３の実施の形態の適用されたはんだバンプ形成装置の正面概略構成図。
【図６】本発明のはんだバンプ形成方法及びはんだバンプ形成装置の第４の実施の形態の適用されたはんだバンプ形成用電極基板とはんだ供給用基板の概略正面図。
【符号の説明】
１０はんだバンプ形成用電極基板
１１はんだ形成用電極
１２はんだバンプ
２０バンプ高さ補正用電極基板
２１バンプ高さ補正用電極
３０はんだ
４０フラックス
５０はんだバンプ形成装置
５１バンプ形成用電極加熱装置
５２バンプ高さ補正用電極
５３バンプ高さ補正用電極ロール板
５４送り出しローラ
５５巻き取りローラ
５６バンプ高さ補正用電極予備加熱装置
５７フラックス
５８フラックス供給装置
６０はんだバンプ形成装置
６１バンプ形成用電極加熱装置
６２バンプ高さ補正用電極
６３バンプ高さ補正用電極ローラ
６４フラックス
６５フラックス供給装置
６６はんだ除去装置
６７電極ローラ洗浄機
６８研磨テープ
６９ローラ
７０はんだ
８０はんだバンプ形成用電極基板
８１はんだバンプ形成用電極
８２はんだバンプ
９０はんだ供給用基板
９１はんだ供給用電極
９２供給用はんだ[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a solder bump forming method and a solder bump forming apparatus, and more specifically, a solder bump forming method and a solder bump forming apparatus for forming solder bumps having a uniform height on a solder bump forming electrode with high accuracy. About.
[0002]
[Prior art]
Conventionally, an electrode of a semiconductor element is generally made of Al or an alloy mainly composed of Al. A very stable natural oxide film is formed on the electrode surface using these Al. Since this oxide film has poor wettability with welding solder, in the state where the oxide film is formed, bumps are formed. Can't form.
[0003]
Therefore, conventionally, a first solder layer is formed on the transfer carrier substrate, aligned with the electrode of the LD, and solder is welded to form solder bumps on the electrode. Furthermore, using the second transfer carrier substrate on which the second solder layer is formed, the solder layer is aligned with the first solder bump and melted to obtain a second solder bump of a desired size. Has been proposed (see Japanese Patent Laid-Open No. 10-242149).
[0004]
[Problems to be solved by the invention]
However, in the technique described in the above publication, the solder bump height is small by forming a solder layer on a transfer carrier substrate inferior in solder wettability and performing the process of melting and transferring the solder layer a plurality of times. Therefore, it is necessary to form the solder layer a plurality of times, which requires a large number of bump forming steps, and there is a problem that workability is poor.
[0005]
In addition, as a method for forming a solder layer on a transfer carrier substrate having poor solder wettability, it is necessary to form the solder layer by a dry process such as a vacuum evaporation method, which increases the cost of forming a solder layer on the transfer carrier. was there.
[0006]
There So, the present invention Solder bump forming method capable of forming solder bumps having a uniform height at a lower cost and with higher accuracy And solder bump forming apparatus The purpose is to provide.
[0017]
[Means for Solving the Problems]
The solder bump forming method according to the first aspect of the present invention is a solder bump forming method for forming a solder bump having a predetermined height on a plurality of solder bump forming electrodes formed on the solder bump forming electrode substrate. Forming an electrode area of the bump height correcting electrode of the bump height correcting electrode substrate on which a plurality of bump height correcting electrodes are formed smaller than an electrode area of the solder bump forming electrode; Solder bumps were previously formed on the solder bump forming electrodes Before and after The excessive amount of solder bumps on the solder bump forming electrode by bringing the bump height correcting electrode substrate and the solder bump forming electrode substrate close to a predetermined distance in a state where the relative distance is controlled. The above-described object is achieved by transferring the solder to the bump height correcting electrode and aligning the heights of the solder bumps on the plurality of solder bump forming electrodes.
[0018]
According to the above configuration, when forming solder bumps of a predetermined height on the solder bump forming electrodes formed on the solder bump forming electrode substrate, Forming an electrode area of the bump height correcting electrode of the bump height correcting electrode substrate on which a plurality of bump height correcting electrodes are formed, smaller than an electrode area of the solder bump forming electrode; Solder bumps were previously formed on the solder bump forming electrodes After With the relative distance between the electrode substrate for correcting the bump height and the electrode substrate for forming the solder bumps approaching the predetermined interval, an excessive amount of solder bumps on the solder bump forming electrode are removed. Since it is transferred to the bump height correcting electrode and the height of the solder bumps on the plurality of solder bump forming electrodes is aligned, the height of the solder bumps on the plurality of solder bump forming electrodes can be easily and easily In other words, the variation of the banda amount can be adjusted, Furthermore, the transfer amount of the solder transferred from the solder bump forming electrode to the bump height correcting electrode is controlled more finely, Inexpensive and Even more Solder bumps having a uniform height can be formed with high accuracy.
[0019]
The solder bump forming apparatus according to claim 2 is a solder bump forming apparatus for forming solder bumps of a predetermined height on a plurality of solder bump forming electrodes formed on the solder bump forming electrode substrate. Forming an electrode area of the bump height correcting electrode of the bump height correcting electrode substrate on which a plurality of bump height correcting electrodes are formed smaller than an electrode area of the solder bump forming electrode; Bump height correction electrode substrate and the solder bump forming electrode substrate in which solder bumps are formed in advance on the solder bump forming electrode, in a state where the relative interval is controlled, approaching a predetermined interval, By transferring an excessive amount of solder in the solder bump on the solder bump forming electrode to the bump height correcting electrode and aligning the height of the solder bump on the plurality of solder bump forming electrodes, The goal has been achieved.
[0020]
According to the above configuration, when forming solder bumps of a predetermined height on the solder bump forming electrodes formed on the solder bump forming electrode substrate, Forming an electrode area of the bump height correcting electrode of the bump height correcting electrode substrate on which a plurality of bump height correcting electrodes are formed smaller than an electrode area of the solder bump forming electrode; Bump height correction electrode substrate and solder bump forming electrode on which solder bumps have been previously formed are brought close to a predetermined distance while the relative distance is controlled to form a solder bump. Since an excessive amount of solder bumps on the soldering electrodes are transferred to the bump height correction electrode, the solder bump heights on the solder bump forming electrodes are aligned, so that multiple solder bumps can be easily and easily The height of the solder bump on the solder bump forming electrode, that is, the variation in the amount of the solder can be adjusted. Furthermore, the transfer amount of the solder transferred from the solder bump forming electrode to the bump height correcting electrode is controlled more finely, Inexpensive and Even more Capable of forming solder bumps with uniform height
[0039]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described in detail with reference to the accompanying drawings. The embodiments described below are preferred embodiments of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention is particularly limited in the following description. As long as there is no description which limits, it is not restricted to these aspects.
[0040]
1 to 3 are diagrams showing a first embodiment of a solder bump forming method and a solder bump forming apparatus according to the present invention, and FIG. 1 is a solder bump forming method according to the first embodiment of the present invention. FIG. 2 is a front view of a solder bump forming electrode substrate to which the solder bump forming apparatus is applied, and FIG. 2 shows the variation in the height of the solder bump on the solder bump forming electrode substrate of FIG. It is a front view of the state which is correct | amending.
[0041]
As shown in FIG. 1, the solder bump forming method and the solder bump forming apparatus according to the present embodiment are first soldered on each solder forming electrode 11 of the solder bump forming electrode substrate 10 by an inexpensive solder bump forming method. After the bump 12 is formed, the variation in the height of the solder bump 12 is corrected using the bump height correcting electrode substrate 20 as shown in FIG.
[0042]
That is, first, as shown in FIG. 1, the solder bump 12 is formed on the solder forming electrode 11 of the solder bump forming electrode substrate 10 by an inexpensive solder bump forming method such as a solder ball mounting method or a solder plating method. To do.
[0043]
When the solder bumps 12 are formed by such an inexpensive solder bump forming method, as shown in FIG. 1, the solder bumps 12 formed on the solder forming electrodes 11 have variations in their heights, and high accuracy. It is impossible to form a solder bump.
[0044]
Therefore, as shown in FIG. 2, the solder bump forming method and the solder bump forming apparatus of the present embodiment correct the variation in the height of the solder bump 12 by using the bump height correcting electrode substrate 20. .
[0045]
That is, as shown in FIG. 2, a plurality of bump height correction electrodes 21 are formed on the bump height correction electrode substrate 20, and the bump height correction electrode 21 has an area of solder. A predetermined amount is formed smaller than the area of the solder forming electrode 11 formed on the forming electrode substrate 10.
[0046]
Then, the solder bumps 12 formed on the solder bump forming electrodes 11 of the solder bump forming electrode substrate 10 are melted, and the gap (interval) between the bump height correcting electrode 21 and the solder bump 12 is managed. In this state, the bump height correcting electrode substrate 20 is brought close to the solder bump forming electrode substrate 10 to a predetermined interval.
[0047]
At this time, the distance between the solder bump 12 having a high solder bump height and the bump height correcting electrode 21 is shorter than the distance between the solder bump 12 having a low solder bump height and the bump height correcting electrode 21. Only the excessive solder 30 of the solder bump 12 having a high bump height contacts the bump height correcting electrode 21, and the solder 30 of the solder bump 12 having the high solder bump height gets wet with the bump height correcting electrode 21. At the same time, the excessive solder 30 of the solder bump 12 having a high solder bump height is transferred to the bump height correcting electrode 21.
[0048]
In this case, the height correction of the solder bumps 12 is desirably performed in a nitrogen atmosphere in order to prevent solder oxidation.
[0049]
Since the area of the bump height correcting electrode 21 is smaller than the area of the solder bump forming electrode 11, the amount of solder transferred to the bump height correcting electrode 21 is reduced, and the solder bump height is reduced. Control can be performed with high accuracy.
[0050]
For example, when the area of the solder bump forming electrode 11 is 100 μmφ, if the area of the bump height correcting electrode 21 is also 100 μmφ, solder transfer is likely to occur more than necessary, and the solder bump height may be too low. There is.
[0051]
However, when the area of the solder bump forming electrode 11 is 100 μmφ, if the area of the bump height correcting electrode 21 is 50 μmφ, the transfer amount of solder is limited by the electrode area of the bump height correcting electrode 21, It is possible to transfer and remove the solder stably and accurately.
[0052]
In this case, if the area of the bump height correction electrode 21 is reduced, the amount of solder transfer can be reduced. By gradually reducing the area of the bump height correction electrode 21, the transfer efficiency can be improved and the solder can be reduced. The shape control of the bumps can be performed with high accuracy.
[0053]
Further, when the gap between the solder bump forming electrode 11 and the bump height correcting electrode 21 is gradually narrowed, variations in the solder bump height can be corrected, and the bump height of the bumper bump 12 is set to a predetermined bump height. Can be formed.
[0054]
As described above, in the present embodiment, when the solder bumps 12 having a predetermined height are formed on the plurality of solder bump forming electrodes 11 formed on the solder bump forming electrode substrate 10, the solder bump forming electrodes are formed. After the solder bumps 12 are previously formed on the bump 11, the bump height correction electrode substrate 20 on which the plurality of bump height correction electrodes 21 are formed and the solder bump formation electrode substrate 10 are separated from each other by a relative distance (gap). ) In a controlled state, an excessive amount of solder 30 on the solder bump 12 on the solder bump forming electrode 11 is transferred to the bump height correcting electrode 21 to form a plurality of solder bumps. The heights of the solder bumps 12 on the working electrode 11 are made uniform.
[0055]
Therefore, it is possible to easily and easily adjust the height of the solder bumps 12 on the plurality of solder bump forming electrodes 11, that is, the variation in the amount of the vander, and the solder bumps 12 having a uniform height can be obtained at low cost and with high accuracy. Can be formed.
[0056]
Further, in the present embodiment, the electrode area of the bump height correcting electrode 21 is formed smaller than the electrode area of the solder bump forming electrode 11.
[0057]
Accordingly, the transfer amount of the solder 30 transferred from the solder bump forming electrode 11 to the bump height correcting electrode 21 can be finely controlled, and the solder bump 12 having a uniform height can be formed at a lower cost and with higher accuracy. can do.
[0058]
Furthermore, in the present embodiment, the electrode area of the bump height correcting electrode 21 is formed smaller than the electrode area of the solder bump forming electrode 11 and the electrode area of the bump height correcting electrode 21 is gradually increased. Thus, an excessive amount of solder 30 on the solder bump forming electrode 11 is transferred to the gradually decreasing solder bump height correcting electrode 21.
[0059]
Therefore, the transfer amount of the solder 30 transferred from the solder bump forming electrode 11 to the bump height correcting electrode 21 can be controlled more finely, and the solder bumps 12 having the same height can be controlled at low cost and with higher accuracy. Can be formed.
[0060]
Further, in the present embodiment, the gap between the bump height correcting electrode substrate 20 and the solder bump forming electrode substrate 10 is gradually narrowed, and an excessive amount of solder 30 on the solder bump forming electrode 11 is soldered. It is transferred to the bump height correcting electrode 21.
[0061]
Therefore, the transfer amount of the solder transferred from the solder bump forming electrode 11 to the bump height correcting electrode 21 can be more finely controlled, and the solder bumps 12 having a uniform height can be obtained at a lower cost and with higher accuracy. Can be formed.
[0062]
In the case of the present embodiment, flux 40 may be supplied to the bump height correction electrode 21 forming surface of the bump height correction electrode substrate 20 as shown in FIG.
[0063]
That is, as shown in FIG. 3, before transferring the solder 30, the flux 40 is supplied to the surface of the bump height correcting electrode substrate 20 where the bump height correcting electrode 21 is formed. In this way, the solder wettability to the bump height correcting electrode 21 can be improved.
[0064]
For example, when the flux height is supplied to the solder bump forming electrode 11 and then the bump height correcting electrode 21 is brought into contact, the surface tension on the solder bump forming electrode 11 is lowered. A phenomenon occurs in which most of the solder bumps are transferred.
[0065]
On the other hand, when the flux 40 is supplied to the surface on which the bump height correcting electrode 21 of the bump height correcting electrode substrate 20 is formed, the supply of the flux to the solder bumps 12 can be suppressed to the minimum necessary. A decrease in surface tension on the bump forming electrode 11 can be prevented.
[0066]
As a method of supplying the flux 40 to the bump height correcting electrode substrate 20, a spray fluxer method is desirable in order to reduce the amount of the flux 40 applied.
[0067]
In this way, the solder wettability to the bump height correcting electrode 21 can be improved, and the reduction of the solder surface tension on the solder bump forming electrode 11 side can be suppressed, and the solder bump 12 can be stably formed. The solder bumps 12 having a uniform height can be formed at a lower cost and with higher accuracy.
[0068]
FIG. 4 is a schematic front view of a solder bump forming apparatus 50 to which the solder bump forming method and the solder bump forming apparatus according to the second embodiment of the present invention are applied.
[0069]
In the description of the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.
[0070]
In FIG. 4, a solder bump forming device 50 includes a bump forming electrode heating device 51, a bump height correcting electrode roll plate 53 on which a large number of bump height correcting electrodes 52 are formed, and a bump height correcting electrode roll plate 53. , A take-up roller 55 for winding up the bump height correcting electrode roll plate 53, a bump height correcting electrode preheating device 56 for preheating the bump height correcting electrode roll plate 53, and a bump height. A flux supply device 58 for supplying the flux 57 to the correction electrode roll plate 53 is provided.
[0071]
A solder bump forming electrode substrate 10 similar to that of the first embodiment is placed on the bump forming electrode heating device 51, and on the solder bump forming electrode 11 of the solder bump forming electrode substrate 10. The solder bumps 12 are formed by an inexpensive solder bump forming method.
[0072]
The bump forming electrode heating device 51 constantly heats the solder bumps 12 formed on the solder bump forming electrodes 11 of the solder bump forming electrode substrate 10 to a temperature at which the solder bumps 12 melt, thereby facilitating solder transfer. It shall be
[0073]
The bump height correcting electrode roll plate 53 is wound around a feed roller 54 in a roll shape, and passes through the upper part of the solder bump forming electrode substrate 10 on the bump forming electrode heating device 51 from the feed roller 54. In a state where a predetermined tension is applied, the film is wound around the winding roller 55.
[0074]
The flux supply device 58 is disposed in the vicinity of the feed roller 54, and is provided on the bump height correction electrode 52 forming surface of the bump height correction electrode roll plate 53 fed from the feed roller 54 to the take-up roller 55. A flux 57 is supplied to prevent solder wettability and appropriate solder ball oxidation.
[0075]
The bump height correcting electrode preheating device 56 is disposed on the surface of the bump height correcting electrode roll plate 53 that is wound around the take-up roller 55 from the feed roller 54 on the side opposite to the solder bump forming electrode substrate 10. The bump height correcting electrode roll plate 53 is preheated to a temperature that is 100 ° C. or higher and does not lose the active force of the flux 57 supplied to the bump height correcting electrode roll plate 53.
[0076]
In this solder bump forming apparatus 50, the solder bump forming electrode substrate 10 having the solder bumps 12 formed on the bump forming electrodes 11 is placed on the upper surface of the bump forming electrode heating apparatus 51. As described above, the height varies.
[0077]
The solder bump forming apparatus 50 corrects the gap between the bump height correcting electrode roll plate 53 and the bump forming electrode substrate 10, specifically, the bump height correcting electrode roll plate 53 on the bump height correcting electrode roll plate 53. While controlling the gap between the electrode 52 and the solder bump 12 on the bump forming electrode 11 of the bump forming electrode substrate 10 with high accuracy, the bump height correcting electrode roll plate 53 is used as the bump height correcting electrode preheating device. In the state preliminarily heated at 56, the bump height correcting electrode plate 53 is taken up from the feed roller 54 onto the take-up roller 55 and moved on the bump forming electrode substrate 10 at a predetermined speed.
[0078]
At this time, flux 57 is supplied to the surface of the bump height correcting electrode roll plate 53 on which the bump height correcting electrode 52 is formed, so as to perform solder wettability and appropriate solder ball oxidation prevention.
[0079]
In this way, when the bump height correcting electrode roll plate 53 is moved from the bump forming electrode substrate 10 while managing a predetermined gap, the solder bumps 12 on the bump forming electrodes 11 of the bump forming electrode substrate 10 are moved. The excess solder is transferred to the bump height correcting electrode 52 of the bump height correcting electrode roll plate 53, and the solder bumps 12 on the bump forming electrode 11 are accurately corrected to a uniform height.
[0080]
At this time, the bump height correcting electrode roll plate 53 is heated by the bump height correcting electrode preheating device 56 at a temperature at which the flux 57 supplied to the bump height correcting electrode roll plate 53 does not lose its activity. Since the bump height correcting electrode roll plate 53 is preheated, the excessive solder of the solder bumps 12 on the bump forming electrode 11 is efficiently used to correct the bump height of the bump height correcting electrode roll plate 53. It can be transferred to the electrode 52.
[0081]
In other words, if the bump height correcting electrode roll plate 53 is not preheated, it takes time until the solder gets wet, and the flux 57 becomes active due to overheating of the bump forming substrate 10. A gritty solder is formed on 52.
[0082]
On the other hand, if the preheating temperature of the bump height correcting electrode roll plate 53 is too high, the active force of the flux 57 is lost, solder wettability is reduced, and a icicle-shaped solder is formed.
[0083]
However, in the present embodiment, the bump height correction electrode roll plate 53 and the flux 57 supplied to the bump height correction electrode roll plate 53 by the bump height correction electrode preheating device 56 do not lose their active power. Since the bump height correcting electrode roll plate 53 is preheated to a temperature of about, the excess solder of the solder bumps 12 on the bump forming electrode 11 is efficiently transferred to the bump height of the bump height correcting electrode roll plate 53. It can be transferred to the correction electrode 52. And as this preheating temperature, 100 to 170 degreeC is desirable.
[0084]
As described above, in the present embodiment, the bump height correcting electrode substrate is a roll-shaped bump height correcting electrode roll plate 53, and the bump height correcting electrode roll plate 53 is provided on the surface of the bump height correcting electrode roll plate 53. A plurality of electrodes 52 are formed, and the bump height correcting electrode roll plate 53 is rotated in a predetermined direction, and the relative distance from the solder bump forming electrode substrate 10 is controlled, approaching the predetermined interval. Thus, an excessive amount of solder of the solder bump 12 on the solder bump forming electrode 11 is transferred to the bump height correcting electrode 52.
[0085]
Therefore, an excessive amount of solder can be easily and continuously transferred from the solder bump forming electrode 11 to the bump height correcting electrode 52, and the solder bumps 12 having a uniform height can be obtained at a lower cost and with higher accuracy. Can be formed.
[0086]
In the present embodiment, flux 57 is applied to the surface of the bump height correcting electrode rule plate 53 on which the bump height correcting electrode 52 is formed, and the bump height correcting electrode substrate 53 is applied. And the solder bump forming electrode substrate 10 are brought close to each other.
[0087]
Therefore, the solder wettability to the bump height correcting electrode 52 can be improved, and the reduction of the solder surface tension on the solder bump forming electrode 11 side can be suppressed, so that the solder bump 12 can be formed stably. It is possible to control and form the solder bumps 12 having the same height at a lower cost and with higher accuracy.
[0088]
Furthermore, in the present embodiment, at least during the period in which an excessive amount of solder on the solder bump 12 on the solder bump forming electrode 11 is transferred to the bump height correcting electrode 52, the bump forming electrode substrate 10 is soldered. The bump forming electrode heating plate 51 is heated to the melting temperature of the solder bumps 12 on the bump forming electrode 11, and the bump height correcting electrode roll plate 53 is at 100 ° C. or higher, and the bump height correcting electrode Preheating is performed by the bump height correcting electrode preheating device 56 in a temperature range in which the flux 57 applied to 52 maintains the active force.
[0089]
Therefore, it is possible to improve the transferability of the solder from the solder bump forming electrode 11 to the bump height correcting electrode 52, and to prevent the formation of icicle-shaped solder on the bump height correcting electrode 52. Thus, the solder bumps 12 having the same height can be formed at a lower cost and with higher accuracy.
[0090]
FIG. 5 is a schematic front view of a solder bump forming apparatus 60 to which a third embodiment of the solder bump forming method and the solder bump forming apparatus of the present invention is applied.
[0091]
In the description of the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.
[0092]
In FIG. 5, a solder bump forming device 60 includes a bump forming electrode heating device 61, a bump height correcting electrode roller 63 in which a large number of bump height correcting electrodes 62 are formed, and a bump height correcting electrode roller 63. A flux supply device (flux application unit) 65 for supplying the flux 64, a solder removal device (removal unit) 66, an electrode roller cleaning machine (cleaning unit) 67, and the like are provided.
[0093]
A solder bump forming electrode substrate 10 similar to that of the first embodiment is placed on the bump forming electrode heating device 61, and on the solder bump forming electrode 11 of the solder bump forming electrode substrate 10. The solder bumps 12 are formed by an inexpensive solder bump forming method.
[0094]
The bump forming electrode heating device 61 constantly heats the solder bumps 12 formed on the solder bump forming electrodes 11 of the solder bump forming electrode substrate 10 to a temperature at which the solder bumps 12 melt, thereby transferring the solder. Is easy.
[0095]
The solder height correcting electrode roller 63 is formed in a roller shape, and a large number of bump height correcting electrodes 62 are formed on the surface substrate. The solder height correcting electrode roller 63 is disposed above the solder bump forming electrode substrate 10 on the bump forming electrode heating device 61 and is rotated counterclockwise as indicated by an arrow in FIG.
[0096]
The electrode area of the solder height correcting electrode 62 of the solder height correcting electrode roller 63 is formed to be smaller than the electrode area of the solder bump forming electrode 11 of the solder bump forming electrode substrate 10.
[0097]
The flux supply device 65 is in the vicinity of the solder height correcting electrode roller 63 and in the rotational direction of the solder height correcting electrode roller 63 more than the solder bump forming electrode substrate 10 on the bump forming electrode heating device 61. A flux 64 is supplied to the surface of the electrode roller 63 for correcting the solder height so as to prevent the solder wettability and appropriate solder ball oxidation.
[0098]
The solder removal device 66 removes the solder 70 on the solder height correcting electrode 62 of the solder height correcting electrode roller 63. The solder removal method by the solder removal device 66 is, for example, transferred from the solder forming electrode 11 to the solder height correcting electrode 62 of the solder height correcting electrode roller 63. A method of removing the solder 70 mechanically by rotary polishing, a method of removing a wire with good solder wettability by contacting it in a heated state, or a method of sucking and removing the solder 70 in a heated and melted state. However, it is not limited to these methods.
[0099]
The electrode roller cleaning machine 67 includes a polishing tape 68 impregnated with a solvent and a roller 69 that presses the polishing tape 68 against the electrode roller 63 for correcting the solder height. The roller 69 corrects the polishing tape 68 with the solder height. It is pressed against the electrode roller 63 for removing flux residue and the like.
[0100]
In this solder bump forming device 60, the solder bump forming electrode substrate 10 on which the solder bumps 12 are formed is placed on the bump forming electrode 11 on the upper surface of the bump forming electrode heating device 61. As described above, the height varies.
[0101]
The solder bump forming device 60 corrects the gap (interval) between the bump height correcting electrode roller 63 and the bump forming electrode substrate 10, specifically, the bump height correction on the bump height correcting electrode roller 63. The bump height correcting electrode roller 63 is counterclockwise as indicated by the arrow in FIG. 5 while managing the gap between the electrode 62 for solder and the solder bump 12 on the bump forming electrode 11 of the bump forming electrode substrate 10 with high accuracy. For example, the solder height correcting electrode 62 is moved on the bump forming electrode substrate 10 at a predetermined speed in a direction indicated by an arrow in FIG.
[0102]
At this time, the flux 64 is supplied from the flux supply device 64 to the surface of the bump height correcting electrode roller 63 where the bump height correcting electrode 62 is formed, so that the solder wettability and appropriate solder ball oxidation are performed. Prevent it.
[0103]
In this way, when the bump height correcting electrode roller 63 is rotated with the bump forming electrode substrate 10 while managing a predetermined gap, the solder bumps 12 on the bump forming electrodes 11 of the bump forming electrode substrate 10 are rotated. Excess solder is transferred to the bump height correcting electrode 62 of the bump height correcting electrode roller 63, and the solder bump 12 on the bump forming electrode 11 is accurately corrected to a uniform height.
[0104]
Thus, according to the present embodiment, as the bump height correcting electrode roller 63 rotates, the surface of the bump height correcting electrode roller 63 on which the bump height correcting electrode 62 is formed. Application of the flux 64, removal of the solder 70 transferred from the solder bump forming electrode 11 to the solder height correcting electrode 62, and cleaning of the solder height correcting electrode 62 from which the solder 70 has been removed. In the vicinity of the height correction electrode roller 63, the flux supply device 65, the solder removal device 66, and the electrode roller cleaning device 67 are sequentially disposed along the rotation direction.
[0105]
Therefore, the application process of the flux 64, the removal process of the solder 70 on the solder height correcting electrode 62, and the cleaning process of the solder height correcting electrode 62 are continuously performed to make the first layer more efficient and compact. The height adjustment process of the solder bump 12 can be performed, and the solder bump 12 having a uniform height can be formed at a lower cost and with higher accuracy.
[0106]
FIG. 6 is a schematic front view of a solder bump forming electrode substrate 80 and a solder supply substrate 90 to which a solder bump forming method and a solder bump forming apparatus according to a fourth embodiment of the present invention are applied.
[0107]
In FIG. 6, a large number of solder bump forming electrodes 81 are formed on the surface of the solder bump forming electrode substrate 80, and a solder bump is formed on the solder bump forming electrode 81 using a solder supply substrate 90. 82 is formed.
[0108]
A large number of solder supply electrodes 91 are formed on the surface of the solder supply substrate 90, and the electrode area of the solder supply electrode 91 is relatively smaller than the electrode area on the solder bump forming electrode 81. Is formed small.
[0109]
The solder supply substrate 90 supplies the supply solder 92 supplied on the solder supply electrode 91 onto the solder bump formation electrode 81 of the solder bump formation electrode substrate 80, and the solder bump is formed on the solder bump formation electrode 81. Bumps 82 are formed.
[0110]
The supply of the supply solder 92 onto the solder supply electrode 91 can be performed by, for example, solder plating or solder paste printing.
[0111]
In order to form the solder bump 82 on the solder bump forming electrode 81 of the solder bump forming electrode substrate 80 using the solder supply electrode substrate 90, first, for example, solder plating is performed on the solder bump forming electrode 81. The supply solder 92 is supplied by a method such as solder paste printing, and the gap (interval) between the solder bump forming electrode substrate 80 and the solder supplying electrode substrate 90, specifically, the solder bump forming electrode substrate 80 The gap between the solder bump forming electrode 81 and the solder supplying electrode 91 of the solder supplying electrode substrate 90 is accurately controlled and brought close, and the supplying solder 92 on the solder supplying electrode 91 is placed on the solder bump forming electrode 81. Transcript.
[0112]
At this time, since the electrode area of the solder supply electrode 91 is formed smaller than the solder bump forming electrode 81, even if the supply amount of the supply solder 92 on the solder supply electrode 91 varies, When transferred to the solder bump forming electrode 81 to become the solder bump 82, the variation becomes relatively small.
[0113]
In order to control the amount of solder supplied from the solder supply electrode 91 to the solder bump formation electrode 81 with high accuracy, for example, the solder bump formation electrode substrate 80 and the solder supply substrate 90 are relatively moved in a predetermined direction. If the electrode area of the solder supply electrode 91 is gradually reduced with respect to the relative movement direction, the transfer supply efficiency of the supply solder 92 to the solder bump forming electrode 81 can be improved, and the solder The shape accuracy of the bump can be improved.
[0114]
As described above, the solder bump forming method according to the present embodiment is configured so that the solder bumps 82 having a predetermined height are formed on the solder bump forming electrodes 81 formed on the solder bump forming electrode substrate 80. A supply solder 92 is formed in advance on the solder supply electrode 91 of the solder supply electrode substrate 90 on which a large number of solder supply electrodes 91 having an electrode area smaller than the electrode area of the bump forming electrode 81 are formed. The gap between the supply electrode substrate 90 and the solder bump forming electrode substrate 80 is controlled to a predetermined interval (gap), and the supply solder 92 on the solder supply electrode 91 is transferred and supplied to the solder bump forming electrode 81. Solder bumps 82 are formed on the solder bump forming electrodes 81.
[0115]
Therefore, the supply solder 92 formed on the solder supply electrode 91 by a simple method can be transferred onto the solder bump forming electrode 81 using the surface tension, and the height is aligned with low cost and high accuracy. Solder bumps 82 can be formed.
[0116]
Further, in the present embodiment, the electrode area of the solder supply electrode 91 of the solder supply electrode substrate 90 is gradually reduced, and the supply solder 92 is transferred and supplied to the solder bump forming electrode 81. Solder bumps 82 are formed on the bump forming electrodes 81.
[0117]
Therefore, the supply solder 92 formed on the solder supply electrode 91 by a simple method can be transferred onto the solder bump forming electrode 81 with high accuracy by utilizing the surface tension. A uniform solder bump 82 can be formed.
[0118]
The invention made by the present inventor has been specifically described based on the preferred embodiments. However, the present invention is not limited to the above, and various modifications can be made without departing from the scope of the invention. Needless to say.
[0119]
【The invention's effect】
As described above, the solder bump forming method and the solder bump forming apparatus according to the present invention. According to cheap and Than It is possible to form solder bumps having a uniform height with higher accuracy.
[Brief description of the drawings]
FIG. 1 is a front view of a solder bump forming electrode substrate to which a solder bump forming method and a solder bump forming apparatus according to a first embodiment of a solder bump forming method and a solder bump forming apparatus of the present invention are applied.
FIG. 2 is a front view of a state in which a variation in the height of solder bumps on the solder bump forming electrode substrate of FIG. 1 is corrected by the bump height correcting electrode substrate;
3 is a front view showing a state in which flux is supplied to a bump height correcting electrode forming surface of the bump height correcting electrode substrate of FIG. 2;
FIG. 4 is a schematic front view of a solder bump forming apparatus to which a second embodiment of the solder bump forming method and solder bump forming apparatus of the present invention is applied.
FIG. 5 is a schematic front view of a solder bump forming apparatus to which a third embodiment of the solder bump forming method and solder bump forming apparatus of the present invention is applied.
FIG. 6 is a schematic front view of a solder bump forming electrode substrate and a solder supply substrate to which a fourth embodiment of the solder bump forming method and solder bump forming apparatus of the present invention is applied.
[Explanation of symbols]
10 Electrode substrate for solder bump formation
11 Solder forming electrode
12 Solder bump
20 Bump height correction electrode substrate
21 Bump height correction electrode
30 Solder
40 flux
50 Solder bump forming equipment
51 Electrode heating device for bump formation
52 Bump height correction electrode
53 Bump height correction electrode roll plate
54 Feeding roller
55 Winding roller
56 Electrode Preheating Device for Bump Height Correction
57 Flux
58 Flux supply device
60 Solder bump forming device
61 Electrode heating device for bump formation
62 Bump height correction electrode
63 Bump height correction electrode roller
64 flux
65 Flux supply device
66 Desoldering equipment
67 Electrode roller washer
68 Abrasive tape
69 Laura
70 solder
80 Electrode substrate for solder bump formation
81 Electrodes for forming solder bumps
82 Solder bump
90 Solder supply board
91 Solder supply electrode
92 Solder for supply

Claims

Bump height in which a plurality of bump height correcting electrodes are formed in a solder bump forming method in which a plurality of solder bump forming electrodes are formed on a solder bump forming electrode substrate. After forming the electrode area of the bump height correcting electrode of the correcting electrode substrate smaller than the electrode area of the solder bump forming electrode and forming the solder bump in advance on the solder bump forming electrode, the bump Solder with an excessive amount of solder bumps on the solder bump forming electrode by bringing the height correcting electrode substrate and the solder bump forming electrode substrate close to a predetermined distance in a state where the relative distance is controlled. Solder bump formation method, wherein the height of the solder bumps on the plurality of solder bump formation electrodes is made uniform by transferring the bumps to the bump height correction electrodes .

Bump height in which a plurality of bump height correcting electrodes are formed in a solder bump forming apparatus that forms a solder bump having a predetermined height on a plurality of solder bump forming electrodes formed on a solder bump forming electrode substrate An electrode area of the bump height correction electrode of the correction electrode substrate is formed smaller than an electrode area of the solder bump formation electrode, and the bump height correction electrode substrate and the solder bump formation electrode are formed on the bump height correction electrode substrate. Solder with an excessive amount of solder bumps on the electrode for forming solder bumps is brought close to a predetermined interval while the relative interval is controlled with the electrode substrate for forming solder bumps on which solder bumps are formed in advance. Is transferred to the bump height correcting electrode, and the height of the solder bumps on the plurality of solder bump forming electrodes is made uniform. .

Bump height in which a plurality of bump height correcting electrodes are formed in a solder bump forming method in which a plurality of solder bump forming electrodes are formed on a solder bump forming electrode substrate. The electrode area of the bump height correcting electrode of the correction electrode substrate is formed smaller than the electrode area of the solder bump forming electrode, and the electrode area of the bump height correcting electrode is gradually reduced, After the solder bumps are formed in advance on the solder bump forming electrodes, the bump height correcting electrode substrate and the solder bump forming electrode substrate are brought close to a predetermined distance in a state where the relative distance is controlled. And transferring an excessive amount of solder bumps on the solder bump forming electrodes to the bump height correcting electrodes, and then on the plurality of solder bump forming electrodes. Forming solder bumps wherein the aligning the height of the solder bumps.

Bump height in which a plurality of bump height correcting electrodes are formed in a solder bump forming apparatus that forms a solder bump having a predetermined height on a plurality of solder bump forming electrodes formed on a solder bump forming electrode substrate While forming the electrode area of the bump height correcting electrode of the correction electrode substrate smaller than the electrode area of the solder bump forming electrode, gradually reducing the electrode area of the bump height correcting electrode, The bump height correcting electrode substrate and the solder bump forming electrode substrate in which solder bumps are previously formed on the solder bump forming electrode are brought close to a predetermined interval in a state where the relative interval is controlled. A plurality of solder bump forming electrodes by transferring an excessive amount of solder on the solder bump forming electrodes to the bump height correcting electrode. Solder bump forming apparatus characterized by aligning the height of the solder bumps.

The solder bump forming how, the said bump height correcting electrode substrate gradually narrowed the distance between the solder bump forming electrode substrates, an excess amount of the solder solder bumps on the solder bump forming electrodes forming solder bumps how according to claim 1 or claim 3, characterized in that to transfer the height correcting electrode.

The solder bump forming apparatus gradually narrows a gap between the bump height correcting electrode substrate and the solder bump forming electrode substrate to remove an excessive amount of solder on the solder bump forming electrode. The solder bump forming apparatus according to claim 2, wherein the solder bump forming apparatus transfers the height to the height correction electrode.

In a solder bump forming method of forming a solder bump having a predetermined height on a plurality of solder bump forming electrodes formed on the solder bump forming electrode substrate, after the solder bump is previously formed on the solder bump forming electrode , While rotating the roll-shaped bump height correction electrode substrate formed on the surface, provided in a position facing the solder bump forming electrode substrate, in a predetermined direction, In a state where the relative distance from the solder bump forming electrode substrate is controlled, the solder bump is brought close to a predetermined distance, and an excessive amount of solder bump on the solder bump forming electrode is applied to the bump height correcting electrode. A method for forming solder bumps, wherein the solder bump heights are uniformed by transferring the solder bumps on the plurality of solder bump forming electrodes.

In a solder bump forming apparatus for forming a solder bump having a predetermined height on a plurality of solder bump forming electrodes formed on a solder bump forming electrode substrate, the solder bump is previously formed on the solder bump forming electrode. , While rotating the roll-shaped bump height correction electrode substrate formed on the surface, provided in a position facing the solder bump forming electrode substrate, in a predetermined direction, In a state where the relative distance from the solder bump forming electrode substrate is controlled, the solder bump is brought close to a predetermined distance, and an excessive amount of solder bump on the solder bump forming electrode is applied to the bump height correcting electrode. A solder bump forming apparatus, wherein the height of the solder bumps on the plurality of solder bump forming electrodes is made uniform by transfer.

The solder bump forming how is the surface which is formed of the bump height correcting electrode of the rolled bump height correcting electrode substrate, flux is applied, and the electrode substrate for the bump height correction forming solder bumps how according to claim 7, characterized in that to approach and said solder bump forming electrode substrate.

The solder bump forming apparatus applies a flux to the surface of the roll-shaped bump height correction electrode substrate on which the bump height correction electrode is formed, and the bump height correction electrode substrate and the bump height correction electrode substrate The solder bump forming apparatus according to claim 8, wherein the solder bump forming electrode substrate is brought close to the solder bump forming electrode substrate.

The solder bump forming how the period of transferring the solder excessive amount of solder bumps on at least said solder bump forming electrodes on the bump height correcting electrode, the bump forming electrode substrate, the solder bumps When the solder bump on the forming electrode is heated to the melting temperature of the solder bump and the bump height correcting electrode is 100 ° C. or higher and the flux is applied to the bump height correcting electrode, the flux is forming solder bumps how according to claim 7 or claim 9, characterized in that preheating to a temperature range to maintain the activity force.

In the solder bump forming apparatus, at least a solder bump on the solder bump forming electrode is transferred to the bump height correcting electrode with an excessive amount of solder bumps on the solder bump forming electrode. The solder bump on the electrode for heating is heated to the melting temperature of the solder bump, and the bump height correcting electrode is 100 ° C. or higher, and the flux is activated when the flux is applied to the bump height correcting electrode. The solder bump forming apparatus according to claim 8 or 10, wherein preheating is performed within a temperature range in which force is maintained.

In a solder bump forming method of forming a solder bump having a predetermined height on a plurality of solder bump forming electrodes formed on the solder bump forming electrode substrate, after the solder bump is previously formed on the solder bump forming electrode The roller-shaped bump height correcting electrode substrate provided on the surface with a plurality of bump height correcting electrodes provided at a position facing the solder bump forming electrode substrate, while rotating in a predetermined direction, In a state where the relative distance from the solder bump forming electrode substrate is controlled, the solder bump is brought close to a predetermined distance, and an excessive amount of solder bump on the solder bump forming electrode is applied to the bump height correcting electrode. A method for forming solder bumps, wherein the solder bump heights are uniformed by transferring the solder bumps on the plurality of solder bump forming electrodes.

In a solder bump forming apparatus for forming a solder bump having a predetermined height on a plurality of solder bump forming electrodes formed on a solder bump forming electrode substrate, the solder bump is previously formed on the solder bump forming electrode. The roller-shaped bump height correcting electrode substrate provided on the surface with a plurality of bump height correcting electrodes provided at a position facing the solder bump forming electrode substrate, while rotating in a predetermined direction, In a state where the relative distance from the solder bump forming electrode substrate is controlled, the solder bump is brought close to a predetermined distance, and an excessive amount of solder bump on the solder bump forming electrode is applied to the bump height correcting electrode. A solder bump forming apparatus, wherein the height of the solder bumps on the plurality of solder bump forming electrodes is made uniform by transfer.

The solder bump forming how, in accordance with the rotation of the roller-shaped bump height correcting electrode substrate, the surface being formed of the roller-shaped bump height correcting electrode substrate wherein the bump height correcting electrode The bump height correction includes the application of flux to the solder, the removal of the solder transferred from the solder bump forming electrode to the solder height correction electrode, and the cleaning of the solder height correction electrode from which the solder has been removed. a vicinity of the use electrode substrate, said sequential disposed a flux applying means along the rotational direction, removing means and processed sequentially forming solder bumps how according to claim 13, characterized in that in the cleaning means.

The solder bump forming apparatus moves to the surface of the roller-shaped bump height correcting electrode substrate on which the bump height correcting electrode is formed as the roller-shaped bump height correcting electrode substrate rotates. For the application of the flux, the removal of the solder transferred from the solder bump forming electrode to the solder height correction electrode, and the cleaning of the solder height correction electrode from which the solder has been removed. 15. The solder bump forming apparatus according to claim 14, wherein the solder bump forming apparatus is sequentially processed by a flux applying means, a removing means and a cleaning means which are arranged in the vicinity of the electrode substrate along the rotation direction.

In a solder bump forming method of forming a solder bump having a predetermined height on a plurality of solder bump forming electrodes formed on a solder bump forming electrode substrate, an electrode area smaller than the electrode area of the solder bump forming electrode is formed. A supply solder is formed in advance on the solder supply electrode of the solder supply electrode substrate on which a large number of solder supply electrodes are formed, and the interval between the solder supply electrode substrate and the solder bump forming electrode substrate is set to a predetermined interval. The electrode area of the solder supply electrode of the solder supply electrode substrate is gradually reduced, and the supply solder on the solder supply electrode is transferred and supplied to the solder bump forming electrode. A method for forming a solder bump, comprising forming the solder bump on the solder bump forming electrode.