JP3837531B2 - Microscope and surface observation method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a surface observation method using the microscope, and the principle of the microscope.
[0002]
[Prior art]
In recent years, microscopes having atomic and molecular resolution such as an atomic force microscope (AFM) and a scanning tunneling microscope (STM) have been developed and are widely used. Since these microscopes are excellent in resolution at the atomic level, they are sufficiently effective for local observation and local modification of the sample surface. However, the above-described microscope cannot perform surface observation or surface modification in the micrometer region or more.
[0003]
In addition, since surface observation and surface modification using the atomic force microscope are performed in an ultra-high vacuum state, there is a problem that work is complicated and a long time is required.
[0004]
[Problems to be solved by the invention]
An object of the present invention is to provide an apparatus and a method capable of performing surface observation and surface modification in the micrometer region or more easily and in a short time.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides:
A microplasma array in which a plurality of probe deep needles are erected on a predetermined substrate;
Gas introduction means for introducing a plasma generation gas in the vicinity of the microplasma array;
A high frequency applying means for generating a plasma jet by converting the plasma generation gas into a plasma by applying a high frequency to the microplasma array;
An induced current measuring means for measuring a plasma induced current generated between the microplasma array and the sample to be observed;
The present invention relates to a microscope.
[0007]
In the microscope of the present invention, a microplasma array in which a plurality of plasma probes are erected is used, and a plasma jet is emitted from the microplasma array toward the sample, whereby the microplasma array and the sample are The plasma induced current generated between them is measured.
[0008]
The plasma induced current flowing through each plasma probe constituting the microplasma array changes depending on the distance between each plasma probe and the sample surface. Specifically, the plasma induced current flowing in each plasma probe varies exponentially with the distance between each plasma probe and the sample surface, and exponentially with the increase in the distance. Decrease. Accordingly, the distance between each probe probe and the sample surface can be indirectly measured by measuring the plasma induced current value flowing through each probe probe.
[0009]
Since the above-described microplasma array has a plurality of the probe probes described above, by measuring the plasma induced currents flowing through the plurality of probe probes constituting the microplasma array, It becomes possible to simultaneously measure the distance from the sample surface where each is located. Therefore, the uneven state of the sample surface can be observed, and surface observation over the micrometer region can be performed.
[0010]
In the microscope of the present invention , since the plasma generating gas is used, the operating environment pressure can be set to a relatively high state near atmospheric pressure. Therefore, since it is not necessary to realize an ultrahigh vacuum state as in a conventional atomic force microscope, the actual work is simplified and the work time can be shortened.
[0011]
Further, in the microscope of the present invention, since the plasma jet is irradiated toward the sample, the intensity of the plasma jet, the gas species constituting the plasma jet, the distance between the microplasma array and the sample surface, etc. are appropriately set. Thus, the surface modification of the sample can be performed in a size larger than the micrometer region.
[0012]
The surface observation and the surface modification described above can be performed separately, but can also be performed simultaneously.
[0013]
The “surface modification” means etching, surface cleaning, and the like in addition to the original modification that changes the composition and structure of the sample surface.
Other features of the present invention are described in detail below.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a diagram schematically showing the configuration of the microscope of the present invention, and FIG. 2 is an enlarged view showing the inverted state of the microplasma array in FIG.
[0015]
A microscope 80 shown in FIG. 1 includes a microplasma array 10, a gas introduction pipe 20 for introducing a plasma generation gas into a lower region of the microplasma array 10, a supply source 30 of the plasma generation gas, and a microplasma array. 10 includes a high-frequency power source 50 and a matching circuit system 60 for applying a high frequency to 10 and an induced current detection system 70 for detecting the generated plasma induced current. Further, a mass flow controller 40 for controlling the flow rate of the plasma generation gas supplied from the supply source 30 to the microplasma array 10 is provided in the middle of the gas introduction pipe 20.
[0016]
In the microscope 80 shown in FIG. 1, the sample X to be subjected to surface observation or surface modification is disposed below the microplasma array 10.
[0017]
As shown in FIG. 2, the microplasma array 10 is configured such that a plurality of probe probes 13 are erected on a predetermined substrate 11 via a conductive plate 12. Further, a shielding plate 14 is provided around the probe probe 13 so that the plasma generation gas introduced through the gas introduction tube 20 is confined in the vicinity of the probe probe 13. 2 shows the inverted state of the microplasma array 10. Therefore, when the microplasma array 10 is placed in the microscope 80 shown in FIG. 1, the probe probe 13 faces the sample X side. In this way, it is attached downward.
[0018]
In the microplasma array 10 shown in FIG. 2, the high frequency from the high frequency power supply 50 is configured to be introduced into the conductive plate 12 via the matching circuit system 60. Therefore, the high frequency can be introduced uniformly and easily to the plurality of probe probes 13 only by providing a single introduction terminal. Note that a general-purpose RF power source or the like can be used as the high-frequency power source 50.
[0019]
The diameter of the probe tip 13 is preferably 100 μm or less. As a result, a fine plasma jet can be generated, and a plasma induced current from a minute region on the surface of the sample X can be obtained. Therefore, highly accurate information on the surface of the sample X can be obtained for each probe probe 13, and the surface state of the sample X beyond the micrometer region can be observed with high accuracy as the entire microplasma array 10. Furthermore, it becomes possible to perform a highly accurate modification process on the surface of the sample X that is equal to or larger than the micrometer region.
[0020]
The lower limit value of the diameter of the probe probe 13 is not particularly limited, but is preferably set to 1 μm. It is difficult to obtain a probe probe having a smaller diameter than this, and even if the diameter of the probe probe 13 is reduced beyond the lower limit value, a superior result cannot be obtained.
[0021]
The standing density of the probe probe 13 is preferably 100 × 100 pieces / mm ^{2 to} 1000 × 1000 pieces / mm ² . As a result, the interference of the plasma jet generated by the adjacent probe probe 13 can be suppressed, and a fine plasma jet can be generated. It can be executed with accuracy.
[0022]
The probe probe 13 can be made of stainless steel, tungsten, tungsten carbide, or the like. The conductive plate 12 can be made of a conductive material such as copper and stainless steel. Further, the substrate 11 can be made of various metal materials, conductive materials such as silicon and glass.
[0023]
The kind of plasma generation gas is selected according to surface observation and surface modification to be performed. When performing surface observation, it is composed of a gas having low reactivity such as argon or helium. When surface modification is performed, it is composed of a relatively reactive gas such as oxygen or nitrogen. Even in argon gas or helium gas, surface modification such as etching and cleaning is performed by appropriately adjusting the intensity of the plasma jet generated from these gases and the distance between the microplasma array 10 and the sample X. be able to.
[0024]
Surface observation and surface modification using the microscope 80 shown in FIG. 1 are performed as follows. First, a predetermined gas is introduced from the supply source 30 into the lower region of the microplasma array 10 through the gas introduction tube 20. The gas supply amount is controlled by the mass flow controller 40. Next, a high frequency is introduced from the high frequency power supply 50 to the microplasma array 10 through the matching circuit system 60, a plasma jet is generated from each probe probe 13 constituting the microplasma array 10, and is emitted toward the sample X To do.
[0025]
When the surface of the sample X is irradiated with the plasma jet, the surface of the sample X is excited, so that each probe probe 13 and a portion of the surface of the sample X where the probe probe 13 is located are In the meantime, plasma induced current is generated. The magnitude of the plasma induced current depends on the distance between the probe tip 13 and the surface of the sample X, and decreases as the distance increases. Therefore, the plasma induced current generated as described above is detected by the induced current detection system 70 via each probe probe 13 so that the uneven state on the surface of the sample X can be measured in the micrometer region or more. Become.
[0026]
Further, the surface modification of the sample X can be performed by appropriately setting the kind of the plasma generation gas and the intensity of the plasma jet, or by appropriately setting the distance between the microplasma array 10 and the surface of the sample X. This can be done in the micrometer range or higher.
[0027]
Since the surface observation method and the surface modification method described above use a plasma generation gas, the operating environment pressure can be set to a relatively high state near atmospheric pressure. Therefore, since it is not necessary to realize an ultrahigh vacuum state as in a conventional atomic force microscope, the actual work is simplified and the work time can be shortened.
[0028]
If the sample X is arranged on the XY stage or the like, surface observation and surface modification over the entire surface of the sample X can be performed. Further, the surface observation and surface modification described above can be performed simultaneously.
[0029]
As described above, the present invention has been described in detail based on the embodiments of the invention with specific examples. However, the present invention is not limited to the above-described contents, and various modifications are possible without departing from the scope of the present invention. And changes are possible.
[0030]
【The invention's effect】
As described above, according to the present invention, surface observation and surface modification in the micrometer region and above can be performed easily and in a short time.
[Brief description of the drawings]
FIG. 1 is a diagram schematically showing the configuration of a microscope according to the present invention.
FIG. 2 is an enlarged view showing an inverted state of the microplasma array in FIG. 1;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Microplasma array 11 Board | substrate 12 Conductive plate 13 Probe probe 14 Shielding plate 20 Gas introduction pipe 30 Gas supply source 40 Mass flow controller 50 High frequency power supply 60 Matching circuit system 70 Inductive current detection system 80 Microscope

Claims (11)

A microplasma array in which a plurality of probe deep needles are erected on a predetermined substrate;
Gas introduction means for introducing a plasma generation gas in the vicinity of the microplasma array;
A high frequency applying means for generating a plasma jet by converting the plasma generation gas into a plasma by applying a high frequency to the microplasma array;
An induced current measuring means for measuring a plasma induced current generated between the microplasma array and the sample to be observed;
A microscope characterized by comprising:   The microscope according to claim 1, wherein the plurality of probe probes are provided on the substrate via a conductive plate for introducing the high frequency into the microplasma array.   The microscope according to claim 1, wherein an inner diameter of the probe probe is 100 μm or less. The microscope according to any one of claims 1 to 3, wherein the probe probe has a standing density of 100 x 100 pieces / mm ^{2 to} 1000 x 1000 pieces / mm ² . And performing observation of the micrometer region at the surface of the sample, microscope according to any one of claims 1 to 4. Introducing a plasma generating gas in the vicinity of the plasma probe and applying a high frequency to the plasma probe to generate a plasma jet and launching it toward a predetermined sample;
Measuring a plasma induced current generated between the plasma probe and the sample, and observing irregularities on the sample surface from the magnitude of the plasma induced current;
A method for observing a surface, comprising: The surface observation method according to claim 6 , wherein the plasma probe includes a microplasma array in which a plurality of probe deep needles are erected on a predetermined substrate. The surface observation method according to claim 7 , wherein the plurality of probe probes are provided on the substrate via a conductive plate for introducing a high frequency. 9. The surface observation method according to claim 7 , wherein an inner diameter of the probe probe is 100 μm or less. 10. The surface observation method according to claim 7 , wherein a standing density of the probe probes is 100 × 100 pieces / mm ^{2 to} 1000 × 1000 pieces / mm ² . The surface observation method according to claim 7 , wherein a micrometer region is observed on the surface of the sample.

Images