JP3824792B2 - Dielectric porcelain composition - Google Patents
Dielectric porcelain composition Download PDFInfo
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- JP3824792B2 JP3824792B2 JP28087698A JP28087698A JP3824792B2 JP 3824792 B2 JP3824792 B2 JP 3824792B2 JP 28087698 A JP28087698 A JP 28087698A JP 28087698 A JP28087698 A JP 28087698A JP 3824792 B2 JP3824792 B2 JP 3824792B2
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- dielectric
- porcelain composition
- dielectric porcelain
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Description
【０００１】
【発明の属する技術分野】
本発明は、マイクロ波帯域で用いられる誘電体フィルタや共振器等の材料として適した誘電体磁器組成物に関するものである。
【０００２】
【従来の技術】
移動体通信の分野では自動車電話、携帯電話、ＰＨＳ等の急速な普及とともに、それらの機器で用いられる電子部品の小型化、薄型化の要求が益々強くなっている。誘電体共振器や誘電体フィルタの分野でも例外ではなく、そのためには構造のみならず、材料面の改良も必要となる。
【０００３】
誘電体共振器や誘電体フィルタに用いる誘電体材料としては、誘電率が高いことと損失が少ない、すなわちＱが高いことが要求され、さらに共振周波数の温度係数が小さいことも必要となる。また、最近普及している積層構造のものでは、内部に導体を一体に形成して焼成するので、低温で焼結できる材料が望まれている。
【０００４】
従来、誘電率が高く、Ｑが高い材料としては、Ba２Ti１９O２０系のものが知られているが、焼結温度が1300°Ｃ以上と高いので、上記の要求を満たすことができない。その他の系についても検討されているが、すべての要求を満たすものは得られていない。
【０００５】
【発明が解決しようとする課題】
本発明は、誘電率とＱが高く、誘電体フィルタや誘電体共振器の低損失化、小型化を可能にするとともに、温度係数を小さくしてそれらの特性の安定化を可能にするものである。また、添加物を用いることによって、低温焼成を可能とするものである。
【０００６】
【課題を解決するための手段】
本発明は、ビスマス−ニオブ−アルミナ系の材料組成を選択することによって、上記の課題を解決するものである。また、添加物として酸化銅、酸化バナジウムを用いることによって焼成温度の低温化を図るものである。
【０００７】
すなわち、Bi２O３、Nb２O５、Al２O３から成り、これを一般式ｘBi２O３・ｙNb２O５・ｚAl２O３で表したとき、ｘ、ｙ、ｚがmol％でそれぞれ
43.5≦ｘ≦49.5
44.0≦ｙ≦52.0
1.0≦ｚ≦ 8.0
（ただし、ｘ＋ｙ＋ｚ＝１、0.9≦ｘ／ｙ≦1.0）の範囲にあることに特徴を有するものである。
【０００８】
また、Bi２O３、Nb２O５、Al２O３から成り、これを一般式ｘBi２O３・ｙNb２O５・ｚAl２O３で表したとき、ｘ、ｙ、ｚがmol％でそれぞれ
43.5≦ｘ≦49.5
44.0≦ｙ≦52.0
1.0≦ｚ≦ 8.0
（ただし、ｘ＋ｙ＋ｚ＝１、0.9≦ｘ／ｙ≦1.0）の範囲にある組成物100重量％に対し、CuOを0.25−0.50重量部、V２O３を0.50−0.75重量部添加したことに特徴を有するものである。
【０００９】
【発明の実施の形態】
上記の組成範囲において、比誘電率が33−43、Ｑが6500以上、温度係数が0±30ppm／°Ｃ以内の特性を満たす誘電体磁器組成物が得られた。これらは、1000°Ｃ以下の低温焼成が可能であり、添加物の範囲を選択することによって890°Ｃまで焼成温度を下げることができた。
【００１０】
【実施例】
以下、本発明の実施例について説明する。
【００１１】
Bi２O３、Nb２O５、Al２O３を所定量秤量し、ボールミルで16時間湿式混合した後、水分を乾燥させて得られた混合粉末を750°Cで仮焼した。仮焼粉を再びボールミルで20時間湿式粉砕混合を行った。その際に、CuOとV２O５を必要に応じて加えた。乾燥後、ＰＶＡバインダーを適量混合し、ふるいを通して造粒した。
【００１２】
造粒粉を11φ×9mmとなるように、3000kg／cm２の圧力で成形し、300−600°Cでバインダーを抜き、空気中で850−1050°Cで焼成してサンプルを作製した。サンプルをHakki ＆ Coleman法により、５−６GHzで測定し、比誘電率（εｒ）、Ｑ、温度係数（τｆ）を測定した。
【００１３】
前記の三成分のみの組成で添加物を含まないサンプルの結果を表１に示す。
【００１４】
【表１】
誘電体共振器やフィルタとして実用化が可能な範囲として、比誘電率εｒを33から43の範囲、Qを6500以上、温度係数τｆを0±30ppm／°Cと設定し、これらを満足する組成範囲を選んだ。なお、未焼結のものを除き、焼結温度は950から1000°Cであった。なお、BiとNbの比ｘ／ｙが0.9から1.0の間で良好な特性が得られ、0.9より小さいと温度係数が負の方向に移動してしまい、1.0より大きいとＱが著しく低下してしまう問題が生じた。
【００１６】
三成分系で、上記の式のｘ＝47.0、ｙ＝48.0、ｚ＝5.0の基本組成に酸化銅、酸化バナジウムを添加したサンプルについて同様に測定した結果を表２に示した。所定量の添加物によってＱが若干低くなるが、比誘電率と温度係数が改善されたことを示している。
【００１７】
【表２】
【発明の効果】
本発明によれば、マイクロ波帯域で用いられる誘電体共振器や誘電体フィルタに要求される、誘電率、Ｑ、温度係数のいずれをも満足させる誘電体磁器組成物が得られる。
【００１９】
また、添加物を用いることにより焼成温度を900°C程度まで下げられるので、内部に銀等の導体パターンを有する積層タイプの誘電体フィルタ等にも利用できる。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a dielectric ceramic composition suitable as a material for dielectric filters and resonators used in the microwave band.
[0002]
[Prior art]
In the field of mobile communication, with the rapid spread of automobile phones, mobile phones, PHS, and the like, there is an increasing demand for downsizing and thinning of electronic components used in these devices. There are no exceptions in the field of dielectric resonators and dielectric filters. To that end, not only the structure, but also the material aspects need to be improved.
[0003]
A dielectric material used for a dielectric resonator or a dielectric filter is required to have a high dielectric constant, a low loss, that is, a high Q, and a low temperature coefficient of the resonance frequency. Further, in the case of a layered structure that has recently been widely used, since a conductor is integrally formed inside and fired, a material that can be sintered at a low temperature is desired.
[0004]
Conventionally, as a material having a high dielectric constant and a high Q, a Ba 2 Ti 19 O 20- based material is known. However, since the sintering temperature is as high as 1300 ° C. or higher, the above requirement cannot be satisfied. . Other systems have also been studied, but none have met all requirements.
[0005]
[Problems to be solved by the invention]
The present invention has a high dielectric constant and Q, which enables low loss and downsizing of dielectric filters and dielectric resonators, as well as stabilization of their characteristics by reducing the temperature coefficient. is there. Moreover, low temperature baking is enabled by using an additive.
[0006]
[Means for Solving the Problems]
The present invention solves the above problems by selecting a material composition of bismuth-niobium-alumina system. Moreover, the firing temperature is lowered by using copper oxide or vanadium oxide as an additive.
[0007]
That is, it consists of Bi 2 O 3, Nb 2 O 5, Al 2 O 3 , and when this is represented by the general formula xBi 2 O 3 .yNb 2 O 5 .zAl 2 O 3 , x, y and z are mol%. In each
43.5 ≦ x ≦ 49.5
44.0 ≦ y ≦ 52.0
1.0 ≦ z ≦ 8.0
(However, it is characterized by being in the range of x + y + z = 1, 0.9 ≦ x / y ≦ 1.0).
[0008]
Further, it consists of Bi 2 O 3, Nb 2 O 5, Al 2 O 3 , and when this is expressed by the general formula xBi 2 O 3 .yNb 2 O 5 .zAl 2 O 3 , x, y and z are mol%. In each
43.5 ≦ x ≦ 49.5
44.0 ≦ y ≦ 52.0
1.0 ≦ z ≦ 8.0
(However, 0.25 to 0.50 parts by weight of CuO and 0.50 to 0.75 parts by weight of V 2 O 3 are added to 100% by weight of the composition in the range of x + y + z = 1, 0.9 ≦ x / y ≦ 1.0). It is what has.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
In the above composition range, a dielectric ceramic composition satisfying the characteristics of a relative dielectric constant of 33-43, Q of 6500 or more, and a temperature coefficient of 0 ± 30 ppm / ° C or less was obtained. These could be fired at a low temperature of 1000 ° C. or lower, and the firing temperature could be lowered to 890 ° C. by selecting the range of additives.
[0010]
【Example】
Examples of the present invention will be described below.
[0011]
Bi 2 O 3, Nb 2 O 5 and Al 2 O 3 were weighed in predetermined amounts, wet-mixed with a ball mill for 16 hours, and then mixed powder obtained by drying moisture was calcined at 750 ° C. The calcined powder was again wet pulverized and mixed in a ball mill for 20 hours. At that time, CuO and V 2 O 5 were added as needed. After drying, an appropriate amount of PVA binder was mixed and granulated through a sieve.
[0012]
The granulated powder was molded at a pressure of 3000 kg / cm 2 so as to be 11φ × 9 mm, the binder was removed at 300-600 ° C., and fired in air at 850-1050 ° C. to prepare a sample. The sample was measured at 5-6 GHz by Hakki & Coleman method, and the relative dielectric constant (εr), Q, and temperature coefficient (τf) were measured.
[0013]
Table 1 shows the results of the sample having only the above three components and no additive.
[0014]
[Table 1]
As a range that can be put into practical use as a dielectric resonator or filter, a relative permittivity εr is set in a range of 33 to 43, Q is set to 6500 or more, and a temperature coefficient τf is set to 0 ± 30 ppm / ° C to satisfy these Selected a range. The sintering temperature was 950 to 1000 ° C. except for unsintered ones. Good characteristics are obtained when the ratio x / y of Bi and Nb is between 0.9 and 1.0. If the ratio is less than 0.9, the temperature coefficient moves in the negative direction. The problem that ends.
[0016]
Table 2 shows the results of measurement in the same manner with respect to a sample obtained by adding copper oxide and vanadium oxide to the basic composition of x = 47.0, y = 48.0 and z = 5.0 in the above formula. Although the Q is slightly lowered by a predetermined amount of additive, it shows that the relative permittivity and the temperature coefficient are improved.
[0017]
[Table 2]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the dielectric material ceramic composition which satisfy | fills all of the dielectric constant, Q, and temperature coefficient which are requested | required of the dielectric resonator and dielectric filter used by a microwave band is obtained.
[0019]
Further, since the firing temperature can be lowered to about 900 ° C. by using the additive, it can be used for a laminated type dielectric filter having a conductive pattern such as silver inside.
Claims (2)
43.5≦ｘ≦49.5
44.0≦ｙ≦52.0
1.0≦ｚ≦ 8.0
（ただし、ｘ＋ｙ＋ｚ＝１、0.9≦ｘ／ｙ≦1.0）の範囲にあることを特徴とする誘電体磁器組成物。It consists of Bi 2 O 3, Nb 2 O 5, Al 2 O 3 , and when this is expressed by the general formula xBi 2 O 3 .yNb 2 O 5 .zAl 2 O 3 , x, y and z are each in mol%.
43.5 ≦ x ≦ 49.5
44.0 ≦ y ≦ 52.0
1.0 ≦ z ≦ 8.0
(However, x + y + z = 1, 0.9 ≦ x / y ≦ 1.0).
43.5≦ｘ≦49.5
44.0≦ｙ≦52.0
1.0≦ｚ≦ 8.0
（ただし、ｘ＋ｙ＋ｚ＝１、0.9≦ｘ／ｙ≦1.0）の範囲にある組成物100重量％に対し、CuOを0.25−0.50重量部、V２O３を0.50−0.75重量部添加したことを特徴とする誘電体磁器組成物。It consists of Bi 2 O 3, Nb 2 O 5, Al 2 O 3 , and when this is expressed by the general formula xBi 2 O 3 .yNb 2 O 5 .zAl 2 O 3 , x, y and z are each in mol%.
43.5 ≦ x ≦ 49.5
44.0 ≦ y ≦ 52.0
1.0 ≦ z ≦ 8.0
(However, 0.25 to 0.50 parts by weight of CuO and 0.50 to 0.75 parts by weight of V 2 O 3 are added to 100% by weight of the composition in the range of x + y + z = 1, 0.9 ≦ x / y ≦ 1.0) A dielectric ceramic composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28087698A JP3824792B2 (en) | 1998-10-02 | 1998-10-02 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28087698A JP3824792B2 (en) | 1998-10-02 | 1998-10-02 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000109363A JP2000109363A (en) | 2000-04-18 |
| JP3824792B2 true JP3824792B2 (en) | 2006-09-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28087698A Expired - Lifetime JP3824792B2 (en) | 1998-10-02 | 1998-10-02 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3824792B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100349006B1 (en) * | 2000-06-22 | 2002-08-17 | 주식회사 어드밴택 | A dielectric material for microwave |
| DE10325008B4 (en) * | 2003-06-03 | 2007-11-22 | Epcos Ag | Electrical component and its manufacture |
| KR100698440B1 (en) | 2005-08-16 | 2007-03-23 | 한국과학기술연구원 | Process of preparing low- temperature sintered microwave dielectric ceramics |
-
1998
- 1998-10-02 JP JP28087698A patent/JP3824792B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JP2000109363A (en) | 2000-04-18 |
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