JP3813135B2 - Wire bonding method - Google Patents

Wire bonding method Download PDF

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JP3813135B2
JP3813135B2 JP2003115123A JP2003115123A JP3813135B2 JP 3813135 B2 JP3813135 B2 JP 3813135B2 JP 2003115123 A JP2003115123 A JP 2003115123A JP 2003115123 A JP2003115123 A JP 2003115123A JP 3813135 B2 JP3813135 B2 JP 3813135B2
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wire
bonding point
capillary
point
bonding
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JP2004319921A (en
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美仁 萩原
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Shinkawa Ltd
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Shinkawa Ltd
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  • Wire Bonding (AREA)

Abstract

PURPOSE: A wire bonding method is provided to fully secure a clearance between a wire and an edge of a die, to prevent the short between adjacent wires and to restrain the deformation of the wires by obtaining an improved wire structure. CONSTITUTION: A wire(3) is connected to a first bonding point(A). A first reverse motion for moving slightly the wire to a reverse direction of a second bonding point(K) is performed on the wire by using a capillary. A second reverse motion and a third reverse motion are sequentially performed on the wire by using the capillary. A clamper is closed and the capillary is horizontally moved to the reverse direction of the second bonding point. The clamper is opened and the capillary is horizontally moved to a second bonding point direction. The wire is connected to the second bonding point.

Description

【０００１】
【発明の属する技術分野】
本発明は、第１ボンディング点と第２ボンディング点との間をワイヤで接続するワイヤボンディング方法に係り、特にワイヤループ形成方法に関する。
【０００２】
【従来の技術】
半導体装置の小型化、軽量化、高性能の要求に応じるものに、複数個のダイ（半導体チップ）を積層させたスタックドパッケージがある。スタックドパッケージは、複数個のダイを積層させているので、積層されたダイの高さが必然的に高くなる。このようなスタックドパッケージにおけるダイのバンプ電極と回路基板の配線間をワイヤで接続して多層ワイヤループを形成するワイヤボンディング方法として次の２つの方法が知られている。
【０００３】
第１の方法は、ダイのバンプ電極を第１ボンディング点としてワイヤの先端に形成されたボールをボンディングし、ワイヤを回路基板の配線の方向にルーピングして該配線を第２ボンディング点としてワイヤをボンディングする。第２の方法は、予めダイのバンプ電極上にバンプを形成しておき、回路基板の配線を第１ボンディング点としてワイヤの先端に形成されたボールをボンディングし、ワイヤをダイのバンプ電極の方向にルーピングしてバンプ電極上のバンプを第２ボンディング点としてワイヤをボンディングする。（例えば特許文献１及び２参照）
【０００４】
【特許文献１】
特開平１１−２０４７２０公報
【特許文献２】
特開２０００−３０７０５７公報
【０００５】
【発明が解決しようとする課題】
ダイのバンプ電極を第１ボンディング点とし、回路基板の配線を第２ボンディング点とする第１の方法は、バンプ電極よりワイヤが立ち上がるので、ダイのエッジにワイヤが接触しにくい。回路基板の配線を第１ボンディング点とし、ダイのバンプ電極を第２ボンディング点とする第２の方法は、バンプ電極に対してワイヤが斜めに接続されるので、ダイのエッジにワイヤが接触し易くなる。しかし、多層ワイヤループ形成においては、生産性の向上及び半導体装置の小型化等により第１の方法と第２の方法を組み合わせた方法又は第２の方法のみを採用することが行われている。
【０００６】
上記従来技術の前記第２の方法は、多層ワイヤループを単に連続した曲線形状に形成したのみであるので、特に配線（第１ボンディング点）とバンプ電極（第２ボンディング点）との平面距離（上面から見た平面的距離）が例えば０．３ｍｍ程度で、かつ積層されたダイの高さ（配線からバンプ電極までの高さ）が例えば１．０ｍｍ程度の場合には、ダイのエッジに接触し易いという問題があった。またワイヤループは隣接するワイヤループとの接触を避けるために膨らませており、また膨らませない場合も単なる連続した曲線であるので、ワイヤの腰が弱く、後工程の樹脂封止によって多層ワイヤループが変形するという問題があった。
【０００７】
本発明の課題は、ダイのエッジとのクリアランスを十分に確保でき、また積層されたダイの多層ワイヤループ上で隣接するワイヤループにショートすることなく形成できると共に、ワイヤの腰が強くて変形しにくいワイヤボンディング方法を提供することにある。
【０００８】
【課題を解決するための手段】
上記課題を解決するための本発明の第１の手段は、第１ボンディング点と第２ボンディング点との間をワイヤで接続するワイヤボンディング方法において、
第１ボンディング点にワイヤを接続する工程と、
次にキャピラリを少し上昇させ、続いて第２ボンディング点と反対方向に僅かに移動させる第１のリバース動作を行う工程と、
次にキャピラリを上昇させ、続いて第２ボンディング点と反対方向に移動させる第２のリバース動作を行う工程と、
次にキャピラリを上昇させ、続いて第２ボンディング点と反対方向で斜め下方に移動させる第３のリバース動作を行う工程と、
次にクランパが閉じ、キャピラリを第２ボンディング点の反対の方向に水平移動させる工程と、
次にクランパが開き、キャピラリを第２ボンディング点の方向に僅かに戻して水平移動する工程と、
次にキャピラリを第１ボンディング点のほぼ上方まで上昇させてワイヤを繰り出し、第２ボンディング点の方向に移動させてワイヤを第２ボンディング点に接続する工程とを行うことを特徴とする。
【０００９】
【発明の実施の形態】
本発明のワイヤボンディング方法を図１及び図２により説明する。図２に示すように、セラミック基板やプリント基板等又はリードフレームよりなる回路基板１上には、積層されて厚さの厚いダイ２がマウントされている。本実施の形態は、回路基板１の配線又はリード等の第１ボンディング点Ａに第１ボンディングを行い、ダイ２の第２ボンディング点Ｋに第２ボンディングを行って第１ボンディング点Ａと第２ボンディング点Ｋ間をワイヤ３により電気的に接続する。４はバンプを示し、ワイヤ３を接続する前に予め公知のワイヤボンディング方法によってダイ２のバンプ電極上に形成されている。
【００１０】
まず、図１（ａ）に示すように、ワイヤ３をクランプするクランパ（図示せず）は開状態で、キャピラリ５が下降して第１ボンディング点Ａにワイヤ先端に形成されたボールをボンディングした後、キャピラリ５はＢ点まで上昇してワイヤ３を繰り出す。次に図１（ｂ）に示すように、キャピラリ５を第２ボンディング点Ｋと反対方向のＣ点まで水平移動させる第１のリバース動作を行う。この図１（ａ）から（ｂ）の工程により、ワイヤ３の部分に屈折部６１が付けられる。またＡ点からＣ点までの工程で繰り出されたワイヤ３は、図２に示すネック高さ部７１となる。
【００１１】
次に図１（ｃ）に示すように、キャピラリ５はＤ点まで上昇してワイヤ３を繰り出す。その後、図１（ｄ）に示すように、キャピラリ５を再び第２ボンディング点Ｋと反対方向のＥ点まで水平移動させる第２のリバース動作を行う。この図１（ｃ）から（ｄ）の工程により、ワイヤ３の部分に屈折部６２が付けられる。またＣ点からＥ点までの工程で繰り出されたワイヤ３は、図２に示すほぼ垂直に伸びた垂直ワイヤ部７２となる。
【００１２】
次に図１（ｅ）に示すように、キャピラリ５はダイ２より高いＦ点まで上昇してワイヤ３を繰り出す。その後、図１（ｆ）に示すように、キャピラリ５を第２ボンディング点Ｋと反対方向でかつ斜め下方のＧ点まで移動させる第３のリバース動作を行う。ここで、キャピラリ５を斜め下方に移動させるのは、後記する屈折部６３に強い癖を付けることにある。
【００１３】
前記Ｇ点でクランパは閉じ、図１（ｇ）に示すように、キャピラリ５は再び第２ボンディング点Ｋの反対の方向のＨ点まで水平移動する。この図１（ｅ）から（ｇ）の工程により、ワイヤ３の部分に屈折部６３が付けられる。またＥ点からＧ点までの工程で繰り出されたワイヤ３は、図２に示す上昇傾斜部７３となる。このように、Ｇ点からＨ点まではクランパは閉じて水平移動するので、この動作によって屈折部６２と屈折部６３間の上昇傾斜部７３は膨らむことがなく強い屈折部６３が付き、また屈折部６３の位置が安定すると共に、形状保持力が高いワイヤループ形状が形成される。
【００１４】
次に前記Ｈ点でクランパは開き、図１（ｈ）に示すように、キャピラリ５はＧ点とＨ点のほぼ中間のＩ点まで第２ボンディング点Ｋの方向に水平移動する。このようにキャピラリ５をＨ点よりＩ点まで戻すのは、前記したように強い屈折部６３が形成されているので、キャピラリ５をＨ点より上昇させてワイヤ３を繰り出すと、屈折部６３がキャピラリ５の下端のホールエッジ部に引っ掛かってワイヤ３が正常に繰り出されない虞がある。前記した戻し工程を行うと、屈折部６３がキャピラリ５の下端のホールエッジ部より離れる。
【００１５】
次に図１（ｉ）に示すように、キャピラリ５は第１ボンディング点Ａのほぼ上方のＪ点まで上昇して図２に示す下降傾斜部７４分だけワイヤ３を繰り出す。その後は従来と同様に、クランパ（図示せず）は閉じ、図２に示すように、キャピラリ５は円弧運動又は円弧運動後に下降して第２ボンディング点Ｋに位置し、ワイヤ３をバンプ４上に第２ボンディングする。なお、Ｊ点から第２ボンディング点Ｋまでの動作は、本発明の要旨と直接関係はないので、前記した円弧動作を行わせても、またはその他の種々の動作を行わせても良いことは言うまでもない。
【００１６】
このように、第１ボンディング点Ａよりほぼ垂直に立ち上がった垂直ワイヤ部７２が形成され、また上昇傾斜部７３と下降傾斜部７４とで山形形状に形成され、かつ第２ボンディング点Ｋ直前の屈折部６３は、前記した方法によって強い屈折に形成されているので、ダイ２のエッジとのクリアランスを確保でき、ダイ２エッジショートを回避できる。またワイヤ３の腰が強く形成されるので、多層ワイヤループにおいても隣接するワイヤループとの干渉を防止できると共に、樹脂封止等の外力によってワイヤループが変形しにくい。本実施の形態は、特に第１ボンディング点Ａと第２ボンディング点Ｋとの平面距離（上面から見た平面的距離）が短く、かつ第１ボンディング点Ａから第２ボンディング点Ｋまでの高さが高い場合には効果的である。
【００１７】
【発明の効果】
本発明は、第１ボンディング点にワイヤを接続する工程と、次にキャピラリを少し上昇させ、続いて第２ボンディング点と反対方向に僅かに移動させる第１のリバース動作を行う工程と、次にキャピラリを上昇させ、続いて第２ボンディング点と反対方向に移動させる第２のリバース動作を行う工程と、次にキャピラリを上昇させ、続いて第２ボンディング点と反対方向で斜め下方にに移動させる第３のリバース動作を行う工程と、次にクランパが閉じ、キャピラリを第２ボンディング点の反対の方向に水平移動させる工程と、次にクランパが開き、キャピラリを第２ボンディング点の方向に僅かに戻して水平移動する工程と、次にキャピラリを第１ボンディング点のほぼ上方まで上昇させてワイヤを繰り出し、第２ボンディング点の方向に移動させてワイヤを第２ボンディング点に接続する工程とを行うので、ダイのエッジとのクリアランスを十分に確保でき、また積層されたダイの多層ワイヤループ上で隣接するワイヤループにショートすることなく形成できると共に、ワイヤの腰が強くて変形しにくい。
【図面の簡単な説明】
【図１】本発明ワイヤボンディング方法の一実施の形態を示す工程図である。
【図２】図１の工程で得られたワイヤループ形状の一例を示す正面図である。
【符号の説明】
Ａ 第１ボンディング点
Ｋ 第２ボンディング点
１ 回路基板
２ ダイ
３ ワイヤ
４ バンプ
５ キャピラリ
６１、６２、６３ 屈折部
７１ ネック高さ部
７２ 垂直ワイヤ部
７３ 上昇傾斜部
７４ 下降傾斜部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wire bonding method in which a wire is connected between a first bonding point and a second bonding point, and more particularly to a wire loop forming method.
[0002]
[Prior art]
A stacked package in which a plurality of dies (semiconductor chips) are stacked is one that meets the demands for smaller, lighter, and higher performance semiconductor devices. In the stacked package, since a plurality of dies are stacked, the height of the stacked dies is inevitably increased. The following two methods are known as wire bonding methods for forming a multilayer wire loop by connecting the bump electrodes of the die and the wiring of the circuit board in such a stacked package with wires.
[0003]
The first method is to bond the ball formed at the tip of the wire with the bump electrode of the die as the first bonding point, loop the wire in the direction of the wiring on the circuit board, and use the wire as the second bonding point. Bond. In the second method, bumps are formed in advance on the bump electrodes of the die, balls formed at the tips of the wires are bonded using the wiring on the circuit board as the first bonding points, and the wires are directed to the bump electrodes of the die. The wire is bonded using the bump on the bump electrode as a second bonding point. (For example, see Patent Documents 1 and 2)
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 11-204720 [Patent Document 2]
Japanese Patent Laid-Open No. 2000-307057
[Problems to be solved by the invention]
In the first method in which the bump electrode of the die is used as the first bonding point and the wiring on the circuit board is used as the second bonding point, the wire rises from the bump electrode, so that the wire is difficult to contact the edge of the die. In the second method in which the wiring of the circuit board is the first bonding point and the bump electrode of the die is the second bonding point, the wire is obliquely connected to the bump electrode, so that the wire contacts the edge of the die. It becomes easy. However, in the formation of a multilayer wire loop, a method combining the first method and the second method or only the second method is employed for improving productivity and downsizing the semiconductor device.
[0006]
In the second method of the above-described prior art, the multilayer wire loop is simply formed in a continuous curved shape, and in particular, the planar distance between the wiring (first bonding point) and the bump electrode (second bonding point) ( When the planar distance (viewed from the top surface) is about 0.3 mm, for example, and the height of the stacked dies (height from the wiring to the bump electrode) is about 1.0 mm, for example, contact the edge of the die. There was a problem that it was easy to do. In addition, the wire loop is inflated to avoid contact with the adjacent wire loop, and when it does not inflate, it is just a continuous curve, so the wire is weak and the multilayer wire loop is deformed by resin sealing in the subsequent process There was a problem to do.
[0007]
The object of the present invention is to ensure sufficient clearance from the die edge, and can be formed on the multilayered wire loop of the stacked die without short-circuiting to the adjacent wire loop, and the wire waist is strong and deformed. It is to provide a difficult wire bonding method.
[0008]
[Means for Solving the Problems]
The first means of the present invention for solving the above problem is a wire bonding method for connecting a first bonding point and a second bonding point with a wire.
Connecting a wire to the first bonding point;
Next, a step of performing a first reverse operation in which the capillary is slightly raised and subsequently moved slightly in the direction opposite to the second bonding point;
Next, performing a second reverse operation for raising the capillary and subsequently moving it in the direction opposite to the second bonding point;
Next, performing a third reverse operation in which the capillary is raised and subsequently moved obliquely downward in the opposite direction to the second bonding point;
Next, the clamper is closed and the capillary is moved horizontally in the direction opposite to the second bonding point;
Next, the clamper is opened and the capillary is slightly moved back in the direction of the second bonding point and moved horizontally,
Next, the step of raising the capillary to substantially above the first bonding point to pay out the wire and moving it toward the second bonding point to connect the wire to the second bonding point is performed.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
The wire bonding method of the present invention will be described with reference to FIGS. As shown in FIG. 2, a thick die 2 is mounted on a circuit board 1 made of a ceramic substrate, a printed board or the like or a lead frame. In the present embodiment, the first bonding is performed at the first bonding point A such as the wiring or the lead of the circuit board 1, and the second bonding is performed at the second bonding point K of the die 2. The bonding points K are electrically connected by the wire 3. Reference numeral 4 denotes a bump, which is formed on the bump electrode of the die 2 in advance by a known wire bonding method before connecting the wire 3.
[0010]
First, as shown in FIG. 1A, a clamper (not shown) for clamping the wire 3 is in an open state, and the capillary 5 is lowered to bond a ball formed at the tip of the wire to the first bonding point A. Thereafter, the capillary 5 rises to the point B and feeds the wire 3. Next, as shown in FIG. 1B, a first reverse operation is performed in which the capillary 5 is horizontally moved to a point C in the direction opposite to the second bonding point K. Through the steps of FIGS. 1A to 1B, the refracting portion 61 is attached to the wire 3 portion. Further, the wire 3 fed out in the process from the point A to the point C becomes a neck height portion 71 shown in FIG.
[0011]
Next, as shown in FIG.1 (c), the capillary 5 raises to D point and pays out the wire 3. FIG. Thereafter, as shown in FIG. 1D, a second reverse operation is performed in which the capillary 5 is horizontally moved again to the point E in the direction opposite to the second bonding point K. Through the steps of FIGS. 1C to 1D, the refracting portion 62 is attached to the wire 3 portion. Further, the wire 3 fed out in the process from the point C to the point E becomes a vertical wire portion 72 extending substantially vertically as shown in FIG.
[0012]
Next, as shown in FIG. 1 (e), the capillary 5 rises to a point F higher than the die 2 and feeds the wire 3. Thereafter, as shown in FIG. 1 (f), a third reverse operation is performed in which the capillary 5 is moved to the point G which is opposite to the second bonding point K and obliquely below. Here, the reason why the capillary 5 is moved obliquely downward is to attach a strong wrinkle to the refracting portion 63 described later.
[0013]
The clamper closes at the point G, and the capillary 5 again moves horizontally to the point H in the direction opposite to the second bonding point K, as shown in FIG. 1 (e) to (g), the refracting portion 63 is attached to the wire 3 portion. Further, the wire 3 fed out in the process from the point E to the point G becomes the rising inclined portion 73 shown in FIG. In this way, the clamper is closed and horizontally moved from the point G to the point H, so that the rising inclined portion 73 between the refracting portion 62 and the refracting portion 63 does not swell by this operation, and the strong refracting portion 63 is attached and refracted. The position of the part 63 is stabilized, and a wire loop shape having a high shape retention force is formed.
[0014]
Next, the clamper opens at the point H, and the capillary 5 moves horizontally in the direction of the second bonding point K to the point I approximately halfway between the points G and H, as shown in FIG. In this way, the capillary 5 is returned from the H point to the I point because the strong refracting portion 63 is formed as described above. Therefore, when the capillary 5 is raised from the H point and the wire 3 is fed out, the refracting portion 63 is There is a possibility that the wire 3 may not be drawn out normally by being caught by the hole edge portion at the lower end of the capillary 5. When the returning step described above is performed, the refracting portion 63 is separated from the hole edge portion at the lower end of the capillary 5.
[0015]
Next, as shown in FIG. 1 (i), the capillary 5 rises to a point J substantially above the first bonding point A and feeds the wire 3 by the descending inclined portion 74 shown in FIG. Thereafter, as in the conventional case, the clamper (not shown) is closed, and as shown in FIG. 2 , the capillary 5 descends after the arc motion or the arc motion and is positioned at the second bonding point K, and the wire 3 is placed on the bump 4. Second bonding is performed. The operation from the point J to the second bonding point K is not directly related to the gist of the present invention, so that it is possible to perform the above-described arc operation or other various operations. Needless to say.
[0016]
In this way, the vertical wire portion 72 rising substantially perpendicularly from the first bonding point A is formed, the rising slope portion 73 and the falling slope portion 74 are formed in a mountain shape, and the refraction immediately before the second bonding point K is formed. Since the part 63 is formed with strong refraction by the above-described method, a clearance with the edge of the die 2 can be secured, and a die 2 edge short circuit can be avoided. Further, since the waist of the wire 3 is strongly formed, interference with the adjacent wire loop can be prevented even in the multilayer wire loop, and the wire loop is not easily deformed by an external force such as resin sealing. In the present embodiment, in particular, the planar distance between the first bonding point A and the second bonding point K (planar distance as viewed from the upper surface) is short, and the height from the first bonding point A to the second bonding point K is high. It is effective when is high.
[0017]
【The invention's effect】
The present invention includes a step of connecting a wire to the first bonding point, a step of performing a first reverse operation in which the capillary is then lifted slightly, and then moved slightly in a direction opposite to the second bonding point, A step of performing a second reverse operation in which the capillary is raised and subsequently moved in the direction opposite to the second bonding point; and then the capillary is raised and subsequently moved obliquely downward in the direction opposite to the second bonding point Performing a third reverse operation, then closing the clamper and horizontally moving the capillary in the direction opposite the second bonding point, and then opening the clamper and slightly moving the capillary in the direction of the second bonding point. The process of returning and horizontally moving, and then raising the capillary to almost above the first bonding point and feeding the wire in the direction of the second bonding point And connecting the wire to the second bonding point to ensure sufficient clearance from the die edge and without shorting to adjacent wire loops on the stacked die multilayer wire loop It can be formed and the wire is strong and difficult to deform.
[Brief description of the drawings]
FIG. 1 is a process diagram showing an embodiment of a wire bonding method of the present invention.
FIG. 2 is a front view showing an example of a wire loop shape obtained in the step of FIG.
[Explanation of symbols]
A 1st bonding point K 2nd bonding point 1 Circuit board 2 Die 3 Wire 4 Bump 5 Capillary 61, 62, 63 Refraction part 71 Neck height part 72 Vertical wire part 73 Ascending slope part 74 Ascending slope part

Claims (1)

第１ボンディング点と第２ボンディング点との間をワイヤで接続するワイヤボンディング方法において、
第１ボンディング点にワイヤを接続する工程と、
次にキャピラリを少し上昇させ、続いて第２ボンディング点と反対方向に僅かに移動させる第１のリバース動作を行う工程と、
次にキャピラリを上昇させ、続いて第２ボンディング点と反対方向に移動させる第２のリバース動作を行う工程と、
次にキャピラリを上昇させ、続いて第２ボンディング点と反対方向で斜め下方に移動させる第３のリバース動作を行う工程と、
次にクランパが閉じ、キャピラリを第２ボンディング点の反対の方向に水平移動させる工程と、
次にクランパが開き、キャピラリを第２ボンディング点の方向に僅かに戻して水平移動する工程と、
次にキャピラリを第１ボンディング点のほぼ上方まで上昇させてワイヤを繰り出し、第２ボンディング点の方向に移動させてワイヤを第２ボンディング点に接続する工程とを行うことを特徴とするワイヤボンディング方法。In the wire bonding method of connecting the first bonding point and the second bonding point with a wire,
Connecting a wire to the first bonding point;
Next, a step of performing a first reverse operation in which the capillary is slightly raised and subsequently moved slightly in the direction opposite to the second bonding point;
Next, performing a second reverse operation for raising the capillary and subsequently moving it in the direction opposite to the second bonding point;
Next, performing a third reverse operation in which the capillary is raised and subsequently moved obliquely downward in the opposite direction to the second bonding point;
Next, the clamper is closed and the capillary is moved horizontally in the direction opposite to the second bonding point;
Next, the clamper is opened and the capillary is slightly moved back in the direction of the second bonding point and moved horizontally,
Next, a step of raising the capillary to substantially above the first bonding point to pay out the wire and moving it toward the second bonding point to connect the wire to the second bonding point is performed. .
JP2003115123A 2003-04-21 2003-04-21 Wire bonding method Expired - Fee Related JP3813135B2 (en)

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