JP3804570B2 - Semiconductor device manufacturing method and semiconductor device manufacturing apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a technique for forming an insulating film on a defective element electrode of a wafer using an ultraviolet curable resin.
[0002]
[Prior art]
First, the relationship around the semiconductor element electrodes on which the insulating coating is formed will be described with reference to FIGS. A plurality of semiconductor elements are arranged in the semiconductor element region 2 of the wafer 1 as shown in the explanatory view of the arrangement of the wafer and semiconductor elements in FIG. Further, as shown in the drawing for explaining the relationship between the semiconductor element and the scribe lane in FIG. 2, the scribe lane 4 which is a cutting margin for making the semiconductor element 3 into a single piece state after completion of all the inspections performed in the wafer state is the semiconductor element. 3 is provided in the periphery of the area. Furthermore, as shown in the drawing for explaining the arrangement of the elements and electrodes in FIG. 3, an electrode 5 for forming an insulating film is disposed in the semiconductor element 3 so as to surround the insulating protective film (circuit portion) 6.
[0003]
The prior art for forming an insulating film on the surface of the electrode 5 includes an X, Y, Z table for positioning a semiconductor wafer at a predetermined position, a resin coating nozzle provided perpendicular to the semiconductor wafer surface, and a control. 4, after positioning the defective element electrode in the semiconductor wafer placed on the X, Y, Z table at a predetermined position, the X, Y, Z table is raised and the conventional coating shown in FIG. As shown in the figure for explaining the state, the tip of the nozzle 7 is brought into contact with the surface of the electrode 5 and a predetermined amount of the ultraviolet curable resin 9 is dropped, and then the X, Y and Z tables are lowered to complete one process. By performing this operation on all the corresponding electrodes of the defective element, the resin coating process for forming the insulating film on the first defective element is completed. By performing the above operation on all defective elements in the wafer, the resin coating process for forming an insulating film on the defective elements of one wafer is completed. Thereafter, the entire wafer is irradiated with ultraviolet rays to cure the resin, thereby completing the formation of the insulating film.
[0004]
[Problems to be solved by the invention]
However, the conventional technique has the following problems. In other words, as the semiconductor element is miniaturized, the electrode area is also reduced. On the other hand, it is difficult to further reduce the size of the nozzle for dropping the resin because of the dripping property. Nozzle diameter tolerance is disappearing. Therefore, as shown in the drawing for explaining the conventional application state of FIG. 4, when the tip of the nozzle 7 comes into contact with the surface of the electrode 5, the ultraviolet curable resin 9 is applied in a state of protruding from the surface of the electrode 5 as shown in FIG. The UV curable resin 9 is dripped also on the surface of the dam 8, and then the UV curable resin 9 penetrates to the adjacent element beyond the scribe lane 4 due to the permeability, thereby deteriorating the non-defective element. become. Further, the thickness of the insulating coating layer is required to be 3 μm to 5 μm in order to withstand the contact pressure of the measuring terminal at the time of inspection, but the ultraviolet curable resin 9 after application forms the center side of the electrode 5. It penetrates into the insulation protective film (circuit part) 6 over time, and finally the thickness of the insulating coating layer on the surface of the electrode 5 becomes 1 μm or less, and the measurement terminal at the time of inspection breaks through the insulating coating and becomes conductive with the electrode 5 This will cause problems. Further, as described above, the resin coating process for forming the insulating film on the semiconductor wafer is cured by ultraviolet irradiation after being applied to all the defective element electrodes in one wafer. Due to the peculiarity of permeation into the insulating protective film, when viewed on one wafer, the thickness dimension of the insulating coating layer in the first applied portion becomes thinner and the thickness dimension of the insulating coating layer in the end portion becomes thicker. Will occur. For this reason, in the prior art, as shown in the diagram for explaining the conventional resin coating process in FIG. 5, the insulating film forming process is divided into a plurality of blocks every 10 minutes when the thickness of the insulating film layer does not vary. In the first block, the process from step S01 to step S03 is repeated to apply a resin to the electrode of the defective element, and then the insulating film formation is completed by the ultraviolet curing process in step S04. By performing the above processing on all blocks, the thickness of the insulating coating per wafer is secured at a certain level. Therefore, in the present invention, in order to ensure the quality of the insulation film for defective elements of the entire wafer, a method of dropping the resin on a limited area on the fine electrode and the resin on the electrode due to the permeability of the insulation protective film It is a problem that the film is absorbed as time passes and the film thickness is hardly reduced. In addition, measures to reduce productivity in the insulating coating forming process by ultraviolet curing treatment by blocking are also an issue.
[0005]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, in the semiconductor manufacturing apparatus and manufacturing method of the present invention, the nozzle for resin coating is set at an angle of 45 ° with respect to the semiconductor wafer surface, and a part of the tip of the nozzle is in contact with the electrode The resin application to the fine electrode was realized by dripping the resin. Further, as shown in FIG. 3 for explaining the arrangement of the elements and electrodes, the electrodes 5 are arranged along the four sides of the elements. Therefore, when the fixed nozzle inclined at 45 ° is used, the nozzles are arranged for each side. The positional relationship between the inclination and the scribe lane 4 and the insulating protective film (circuit portion) 6 in FIG. 3 changes, and the dripping conditions cannot be fixed. For this reason, in the present invention, a rotating device is provided in the nozzle so that the relationship between the nozzle inclination direction and the scribe lane 4 and the insulating protective film (circuit portion) 6 around the electrode 5 is the same, and under certain conditions. By allowing the resin to be dripped, the resin coating conditions can be greatly expanded. In addition, in order to improve the film quality and the productivity of the insulation film formation process, a resin with high viscosity is introduced to delay the penetration of the resin into the insulation protective film, and after applying the resin to all defective elements in the wafer. The entire wafer was heated by a hot plate to soften the resin and spread the resin on the electrode to a uniform thickness, and then irradiated with ultraviolet rays to form an insulating film. By this method, after applying a resin to the corresponding electrodes of all defective elements of one wafer, an insulating film can be formed by performing UV curing only once, so that productivity can be improved.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. As shown in FIG. 6, in the coating method of the present invention, the angle of the nozzle 7 is inclined by 45 ° with respect to the surface of the electrode 5, and the direction of the nozzle 7 is set to the center direction of the element. In this state, the X, Y, Z table is raised, and the ultraviolet curable resin 9 is dropped while keeping a part of the tip of the nozzle 7 in contact with the surface of the electrode 5, and then the X, Y, Z table is lowered to 1 Complete the batch of resin application. By adopting such a resin coating method, the dripping state of the ultraviolet curable resin 9 is concentrated and dripped onto a limited area on the surface of the electrode 5 as compared with the conventional method, and thereafter the surface of the electrode 5 is gently spread. It is possible to prevent the ultraviolet curable resin 9 from being blocked by the dam 8 provided on the scribe lane 4 side of the electrode 5 and penetrating into the scribe lane 4. Further, by setting the nozzle 7 direction to the center direction of the element, when the ultraviolet curable resin 9 is dropped, the nozzle 7 and the electrode 5 surface are ejected in a large amount forward from the contact portion, without overflowing the scribe lane 4. Thus, it becomes possible to apply the ultraviolet curable resin 9 four times as much as that of the conventional method. As a result, the resin absorption state in the insulating protective film quickly becomes saturated, so that the insulating film thickness on the surface of the electrode 5 does not become thin even after a lapse of time, and the ultraviolet curing that has been blocked is eliminated. In addition, the required insulation film thickness can be secured on the surface of the electrode 5. Next, a method for directing the nozzle 7 direction toward the element center will be described using the description of the apparatus for changing the nozzle direction of the present invention in FIG. This apparatus is composed of a data unit 10, a control unit 11, a rotation mechanism 12, a resin supply unit 13, an XYZ table 14, and a nozzle 7, and sequentially receives position data from a data unit 10 storing semiconductor element position data. The control unit 11 drives the rotation mechanism 12 according to the data to rotate the nozzle 7 in a predetermined direction. By doing so, the dripping direction of the ultraviolet resin 9 from the nozzle 7 can be maintained in the element center direction regardless of the position of the electrode, so that the amount of one resin is increased at any electrode position as described above. It became possible.
[0007]
Further, a coating method using a high viscosity type ultraviolet resin 9 having a viscosity of 1000 cps will be described with reference to FIGS. First, FIG. 8 is a diagram for explaining the resin coating process of the present invention, in which the processes from steps S11 to S13 are repeated to apply the ultraviolet resin 9 to the electrodes of all defective elements in the wafer. The state is a high-viscosity resin as shown in C11 of FIG. 9 for explaining the change in the state of the coated ultraviolet resin 9 of the present invention, so that it does not spread over the entire surface of the electrode 5 but is concentrated at one point. In the next step S14 in FIG. 8, the entire surface of the back surface of the wafer is heated by a hot plate at 40 ° C. for about 2 minutes, so that the ultraviolet resin 9 is softened and the viscosity becomes about 100 cps. The UV resin 9 spreads uniformly. Finally, by irradiating ultraviolet rays for 5 seconds in the process of step S15 in FIG. 8, the ultraviolet resin 9 is cured and an insulating film is formed as shown in C13 of FIG. By adopting this method, the process of spreading the ultraviolet resin 9 to the surface of the electrode 5 and the ultraviolet curing process is performed collectively on the entire wafer, so that the insulating film thickness is uniform and the ultraviolet resin 9 is heated until the wafer is heated. Does not spread on the surface of the electrode 5 and does not penetrate into the insulating protective film, so that it is not necessary to block the ultraviolet curing treatment.
[0008]
【The invention's effect】
As described above, the semiconductor manufacturing method and manufacturing apparatus according to the present invention have the following effects. That is, by using a coating nozzle inclined at 45 ° as in the present invention, it is possible to perform resin coating that forms a uniform insulating film even on fine electrodes. Also, by providing a rotation mechanism that changes the direction of the nozzle, the amount of resin can be increased at one time, and penetration into the insulating protective film can be delayed. Furthermore, by using a high-viscosity resin and adopting a batch resin softening / curing process using a hot plate, it is possible to form a homogeneous insulating film, and only one UV curing treatment is required, which greatly improves productivity. be able to.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining the arrangement of a wafer and a semiconductor device. FIG. 2 is a diagram for explaining the relationship between the semiconductor device and a scribe lane. FIG. FIG. 5 is a diagram illustrating a conventional resin coating process. FIG. 6 is a diagram illustrating a coating method according to the present invention. FIG. 7 is a diagram illustrating an apparatus for changing the direction of a nozzle according to the present invention. FIG. 9 is a diagram for explaining the resin coating process of the invention. FIG. 9 is a diagram for explaining a change in the state of the coated resin of the present invention.
DESCRIPTION OF SYMBOLS 1 Wafer 2 Semiconductor element area | region 3 Semiconductor element 4 Scribe lane 5 Electrode 6 Insulation protective film (circuit part)
7 Nozzle 8 Dam 9 UV curable resin 10 Data unit 11 Control unit 12 Rotating mechanism 13 Resin supply unit 14 XYZ table

Claims (4)

And voltage is applied to each inspection electrodes of the semiconductor integrated circuit device formed on a semiconductor wafer, in the case of collectively inspecting in the electrical characteristics wafer state of the plurality of semiconductor integrated circuit devices, by bad elements A method of manufacturing a semiconductor device in which an ultraviolet curable resin is applied to the surface of the defective element electrode in advance so as not to affect other elements ,
A method of manufacturing a semiconductor device, wherein an ultraviolet curable resin is applied by tilting a resin coating nozzle by 45 ° with respect to the surface of the defective element electrode . 2. The method of manufacturing a semiconductor device according to claim 1, wherein the applied ultraviolet curable resin is irradiated with ultraviolet rays. Before irradiating the ultraviolet to the ultraviolet curing resin coated on the surface of all the defective element electrodes, a semiconductor according to claim 2, wherein the softening on a hot plate at once the coated ultraviolet curable resin Device manufacturing method. When a voltage is applied to each inspection electrode of a plurality of semiconductor integrated circuit elements formed on a semiconductor wafer and the electrical characteristics of the plurality of semiconductor integrated circuit elements are collectively inspected in the wafer state, other elements caused by defective elements An apparatus for manufacturing a semiconductor device in which an ultraviolet curable resin is applied to the surface of the defective element electrode in advance so as not to affect the element,
A resin coating nozzle inclined by 45 ° with respect to the surface of the defective element electrode;
An apparatus for manufacturing a semiconductor device, wherein an ultraviolet curable resin is applied to the surface of the defective element electrode from the resin application nozzle.

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