JP3802795B2 - Semiconductor manufacturing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor manufacturing apparatus provided with a current introduction terminal used for a substrate support for heating a substrate to be processed.
[0002]
[Prior art]
Some semiconductor manufacturing apparatuses have a vacuum chamber that is depressurized to a predetermined degree of vacuum, and various electric devices are generally installed in the vacuum chamber. The supply of electricity to such an electric device is generally performed via a cable from a current introduction terminal that is airtightly fixed to the wall surface of the vacuum chamber. As an example, FIG. 6 shows a configuration of a conventional general semiconductor manufacturing apparatus including an electrostatic chuck.
[0003]
As shown in the figure, the semiconductor manufacturing apparatus 1 has a vacuum chamber 2 that is depressurized to a predetermined degree of vacuum, and a substrate support device 3 installed in the vacuum chamber 2. The substrate support device 3 includes a ceramic substrate support 4 on which a semiconductor wafer W is mounted, a stainless steel stage 5 that supports the substrate support 4, and an insulating plate 6 that is disposed between them to insulate heat. It consists of and.
[0004]
An electrode 4 a is embedded on the upper surface side of the substrate support 4. One end of the electrode 4 a extends to the lower surface of the substrate support 4 and is connected to an electrode terminal 4 b provided on the lower surface of the substrate support 4. The electrode terminal 4 b is connected to a current introduction terminal 7 which is airtightly attached to the wall surface of the vacuum chamber 2 by a cable 8, and the current introduction terminal 7 is connected to a power source 9 provided outside the vacuum chamber 2. Yes. Thereby, when electricity is supplied to the electrode 4a via the cable 8, a potential difference is generated between the electrode 4a and the semiconductor wafer W, and the substrate support 4 attracts the semiconductor wafer W with the electrostatic force generated by the potential difference. Functions as an electrostatic chuck.
[0005]
[Problems to be solved by the invention]
However, when supplying electricity to the electrical equipment as described above, since the cable is in the vacuum chamber, operations such as cable handling and maintenance are troublesome.
[0006]
Therefore, the present invention has been made in view of such circumstances, and a current introduction terminal capable of reducing the labor for installation, maintenance, and the like and easily performing electrical connection, and such a current introduction terminal. An object of the present invention is to provide a semiconductor manufacturing apparatus using the.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the current introduction terminal in the semiconductor manufacturing apparatus according to the present invention is a current introduction terminal provided with a columnar body made of a conductive material, and the columnar body is orthogonal to the longitudinal direction of the columnar body. It is characterized in that a slit extending in the direction to be formed is formed.
[0008]
In the semiconductor manufacturing apparatus according to the present invention , if the current introduction terminal configured as described above is disposed between the first electrode terminal and the second electrode terminal, the first electrode terminal, the second electrode terminal, Even if they are displaced without facing each other, since the slit is formed in the columnar body, the columnar body bends and absorbs the displacement, and the first electrode terminal is provided at one end of the columnar body. Can be electrically connected by bringing the second electrode terminal into contact with the other end. Therefore, the first electric device and the second electric device can be easily electrically connected without using a cable in a semiconductor manufacturing apparatus or the like.
[0009]
The slits are a first slit extending in a first direction orthogonal to the longitudinal direction of the columnar body, and a second direction perpendicular to the first direction and perpendicular to the longitudinal direction of the columnar body. It is preferable to include the 2nd slit extended to. This is because the columnar body bends about the direction in which the slits extend, so if the slits extending in two directions perpendicular to each other are formed, the columnar body is easily bent in each direction.
[0010]
In addition, a plurality of first slits may be alternately formed along the longitudinal direction of the columnar body, and a plurality of second slits may be alternately formed along the longitudinal direction of the columnar body. This is because the columnar body can be easily bent in all directions.
[0011]
Moreover, it is preferable that the cylindrical insulator is provided so that the outer periphery of a columnar body may be enclosed. This is for preventing discharge between the conductive columnar body and the surrounding conductive portion.
[0012]
The first electric device includes a heater that is embedded in a substrate support on which a substrate to be processed is placed and heats the substrate support. A power source is generally used as the second electric device.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF EMBODIMENTS Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the drawings. In the present specification, terms such as “upper” and “lower” are based on the state shown in the drawings and are for convenience. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted.
[0014]
FIG. 1 is a schematic view showing a configuration of a semiconductor manufacturing apparatus 10 according to an embodiment of the present invention, and FIG. 2 is a temperature measurement according to an embodiment of the present invention attached to the semiconductor manufacturing apparatus 10 of FIG. 4 is a schematic diagram showing the configuration of the device 12. FIG. The semiconductor manufacturing apparatus 10 is, for example, a thermal CVD apparatus or the like, and has a vacuum chamber 14 that is depressurized to a predetermined degree of vacuum as shown in FIG. In this vacuum chamber 14, a substrate support device 16 for supporting a semiconductor wafer W as a substrate to be processed is installed.
[0015]
The substrate support device 16 includes a ceramic substrate support 18 on which a semiconductor wafer W as a substrate to be processed is placed on an upper surface, a stainless stage 20 that supports the substrate support 18, and the substrate support 18 and the stage 20. An insulating plate 22 made of a material having excellent thermal insulation such as SiO ₂ , and a heater 24 (first electric device) embedded in the substrate support 18 and heating the substrate support 18; An electrode terminal 26 (first electrode terminal) for the heater 24 is provided. A cylindrical portion 28 extends downward from the stage 20, and the lower end of the cylindrical portion 28 surrounds an opening 30 formed at the bottom of the vacuum chamber 14 and is airtightly attached to the bottom surface of the vacuum chamber 14. It has been.
[0016]
As shown in FIG. 2, a through hole 32 is formed at a position of the insulating plate 22 facing the electrode terminal 26 for the heater 24 embedded in the substrate support 18. A recess 34 is formed on the upper surface of the stage 20 at a position facing the electrode terminal 26. An electrode terminal 38 (second electrode terminal) connected to a power source (second electrical device) 36 provided outside the vacuum chamber 14 is airtightly attached to the bottom of the recess 34. The electrode terminal 38 is provided with a bolt member 40 that protrudes upward into the recess 34.
[0017]
The current introduction terminal 12 is disposed in the recess 34 of the stage 20. The current introduction terminal 12 includes a columnar body 42 that extends in the vertical direction. The columnar body 42 is formed with, for example, eight slits extending in the longitudinal direction, that is, in a direction orthogonal to the vertical direction. A perspective view of the columnar body 42 is shown in FIG. Further, FIG. 4 shows a cross-sectional view along the line IV-IV in FIG. 3, and FIG. 5 shows a cross-sectional view along the line V-V. 3, 4, and 5, xy coordinates are set as illustrated. Here, the direction in which the slit extends refers to the direction in which the bottom surface (the vertical wall surface of the columnar body 42) that defines the slit extends in the illustrated embodiment. The columnar body 42 is easily bent with the formed slit as an axis in the direction in which the bottom surface of the slit extends.
[0018]
As shown in FIG. 3, slits 44 a, 44 b, 48 a and 48 b are formed in order from the top on the upper end side of the columnar body 42. Further, similarly, slits 44a, 44b, 48a and 48b are formed on the lower end side of the columnar body 42 in order from above. These eight slits are formed at equal intervals along the vertical direction.
[0019]
As shown in FIG. 4, the slit 44 a (first slit) has a bottom surface 46 a extending in the y direction (a first direction orthogonal to the longitudinal direction of the columnar body 42). The slits 44b are formed alternately with respect to the slits 44a, and the bottom surfaces 46b extend in the y direction in the same manner as the slits 44a.
[0020]
As shown in FIG. 5, the slit 48 a (second slit) has a bottom surface 50 a extending in the x direction (second direction orthogonal to the longitudinal direction of the columnar body 42). The slits 48b are formed alternately with respect to the slits 48a, and the bottom surfaces 50b extend in the x direction in the same manner as the slits 48a.
[0021]
Thus, if the slits extending in two directions perpendicular to each other are formed alternately, the columnar body 42 can be easily bent in all directions.
[0022]
Further, the columnar body 42 is made of a conductive material, and as shown in FIG. 2, a female screw portion 52 and a female screw portion 54 are formed at the upper end portion and the lower end portion thereof, respectively. A bolt 56 is screwed into the threaded portion 52 through a hole formed in the electrode terminal 26 for the heater 24 so that the electrode terminal 26 and the columnar body 42 are electrically connected. Yes. In addition, the bolt member 40 of the electrode terminal 38 connected to the power source 36 is screwed into the screw portion 54 because it is formed at the lower end, and the electrode terminal 38 and the columnar body 42 are electrically connected. . A hexagon nut 58 is screwed into the bolt member 40 below the columnar body 42. The hexagon nut 58 is fastened upward, that is, toward the lower end of the columnar body 42, functions as a lock nut, and the columnar body 42 is fixed to the bolt member 40.
[0023]
According to the semiconductor manufacturing apparatus 10 and the current introduction terminal 12 configured as described above, the stage 20 is airtightly attached to the vacuum chamber 14 and the electrode terminal 38 connected to the power source 36 is airtightly attached to the recess 34 of the stage 20. In addition, since the current introduction terminal 12 is disposed in the recess 34, the airtightness in the vacuum chamber 14 is not broken.
[0024]
Further, a cylindrical insulator 60 is provided in the gap between the columnar body 42 and the inner wall surface of the through hole 32 of the insulating plate 22 and the inner wall surface of the recess 34 of the stage 20. Thereby, it is possible to easily and reliably prevent discharge between the columnar body 42 made of a conductive material and the stainless stage 20.
[0025]
Next, assembly of the substrate support device 16 will be described. Before the substrate support 18 is installed on the insulating plate 22, the insulator 60 is installed in the recess 34 of the stage 20 through the through hole 32 of the insulating plate 22. Further, a hexagon nut 58 is screwed into the bolt member 40 of the electrode terminal 38 provided at the bottom of the recess 34. Then, the female thread portion 54 at the lower end of the columnar body 42 is screwed into the bolt member 40 of the electrode terminal 38 until the upper end of the columnar body 42 is recessed from the upper surface of the insulating plate 22. In this state, the hexagon nut 58 screwed into the bolt member 40 is tightened upward, that is, toward the lower end of the columnar body 42, and the columnar body 42 is fixed to the bolt member 40.
[0026]
Thereafter, the substrate support 18 is mounted on the insulating plate 22, the bolt 56 is inserted from the hole 62 formed on the upper surface of the substrate support 18, and the bolt 56 is formed in a column shape through the hole formed in the electrode terminal 26 for the heater 24. The body 42 is screwed into the female thread portion 52 at the upper end portion. At this time, even if the electrode terminal 26 for the heater 24 and the electrode terminal 38 connected to the power source 36 are shifted without facing each other, the columnar body 42 is bent by the slit, so that the columnar shape By tightening the bolt 56 until the upper end of the body 42 contacts the lower surface of the substrate support 18, the electrode terminal 26 and the columnar body 42 can be reliably connected. Therefore, severe alignment between the electrode terminal 38 and the electrode terminal 26 is not necessary. In tightening the bolt 56, the columnar body 42 is fixed to the bolt member 40 of the electrode terminal 38 by the hexagon nut 58, so that the columnar body 42 does not rotate.
[0027]
As described above, in assembling the substrate support 16, the heater 24 and the power source 36 can be electrically connected very easily without using a cable. It becomes possible to do.
[0028]
Next, a case where the semiconductor manufacturing apparatus 10 is a thermal CVD apparatus, for example, and the substrate support 18 is heated by the heater 24 will be described. When the substrate support 18 is heated by the heater 24, the electrode terminal 26 embedded in the substrate support 18 is shifted in the horizontal direction with respect to the columnar body 42 due to the difference in thermal expansion. However, since the slits are formed in the columnar body 42, the columnar body 42 can be bent and absorb the difference in thermal expansion. Therefore, it is possible to reduce stress due to the difference in thermal expansion that occurs in the electrode terminal 26, the electrode terminal 38, and the like, and it is possible to prevent these damages.
[0029]
As mentioned above, although one suitable embodiment of the present invention was described in detail, it cannot be overemphasized that the present invention is not limited to the above-mentioned embodiment.
[0030]
In the above embodiment, the case where eight slits are formed in the columnar body has been described, but the present invention is not limited to this. In the above embodiment, the slit is defined by a pair of upper and lower planes parallel to each other and a flat bottom surface, but the shape of the slit is not limited to this. For example, the pair of upper and lower planes may be non-parallel to each other, and the bottom surface may be curved. When the bottom surface is curved, the direction in which the slit extends refers to a direction serving as an axis when the columnar body is bent by the slit. It should be noted that the depth of each slit, the interval between slits, the number of slits, and the like are required in consideration of required current values and voltage values of electric devices such as heaters, and are also required when there is a difference in thermal expansion. It is determined appropriately in consideration of the amount.
[0031]
In the above embodiment, the case where the heater and the power source are electrically connected has been described. However, according to the present invention, since the airtightness in the vacuum chamber is not broken as described above, there are various cases. In a semiconductor manufacturing apparatus, it is possible to electrically connect an electric device installed in a vacuum chamber and a power source provided outside the vacuum chamber. Further, the present invention is not limited to the connection between the electric devices in the semiconductor manufacturing apparatus, and can be applied to the connection between various electric devices.
[0032]
【The invention's effect】
As described above, according to the present invention, the first electrode terminal included in the first electrical device and the second electrode terminal included in the second electrical device are shifted from each other without facing each other. Even so, the columnar body provided in the current introduction terminal is formed with slits extending in the direction perpendicular to the longitudinal direction thereof, so that the columnar body can be bent to absorb the deviation. Therefore, the first electrode terminal can be securely connected to one end of the columnar body, and the second electrode terminal can be securely connected to the other end, and the first electric device and the second electric device can be easily connected. Can be electrically connected. Further, in the semiconductor manufacturing apparatus, since no cable is used in the vacuum chamber, it is possible to reduce labor and time for installation and maintenance, and to shorten the working time.
[Brief description of the drawings]
FIG. 1 is a schematic view showing a configuration of a semiconductor manufacturing apparatus.
FIG. 2 is a schematic diagram showing a configuration of a current introduction terminal attached to the semiconductor manufacturing apparatus of FIG. 1;
FIG. 3 is a perspective view of a columnar body.
4 is a cross-sectional view taken along the line IV-IV in FIG. 3;
5 is a cross-sectional view taken along line VV in FIG. 3. FIG.
FIG. 6 is a schematic view showing a configuration of a conventional semiconductor manufacturing apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Semiconductor manufacturing apparatus, 12 ... Current introduction | transduction terminal, 14 ... Vacuum chamber, 24 ... Heater, 36 ... Power supply, 26, 38 ... Electrode terminal, 42 ... Columnar body, 44a, 44b, 48a, 48b ... Slit.

Claims (5)

A vacuum chamber; a first electrical device having a first electrode terminal installed in the vacuum chamber; and a second electrode terminal of a second electrical device different from the first electrical device. in the semiconductor manufacturing apparatus,
A current introduction terminal is disposed between the first electrode terminal and the second electrode terminal,
The current introduction terminals, with its first end is electrically connected in contact with the first electrode terminal, Ru are electrically connected and the other end is in contact with the second electrode terminal, the conductive A columnar body made of materials
The semiconductor manufacturing apparatus, wherein the columnar body is formed with a slit extending in a direction orthogonal to the longitudinal direction of the columnar body. The semiconductor manufacturing apparatus according to claim 1 , wherein the first electric device is a heater that is embedded in a substrate support on which a substrate to be processed is placed and heats the substrate support. The slit is a first slit extending in a first direction orthogonal to the longitudinal direction of the columnar body, and a second direction that is orthogonal to the longitudinal direction of the columnar body and is perpendicular to the first direction. The semiconductor manufacturing apparatus according to claim 1 , further comprising: a second slit extending in the direction of . A plurality of the first slits are alternately formed along the longitudinal direction of the columnar body, and a plurality of the second slits are alternately formed along the longitudinal direction of the columnar body. The semiconductor manufacturing apparatus according to claim 3. The semiconductor manufacturing apparatus according to claim 1, wherein a cylindrical insulator is provided so as to surround an outer periphery of the columnar body .

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