JP3770755B2 - Substrate processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention relates to a substrate processing apparatus such as a substrate cleaning apparatus or a substrate cleaning / drying apparatus having a function of cleaning a cleaning surface of a substrate such as one or a plurality of semiconductor wafers with a cleaning liquid such as pure water, a chemical solution, or an etching solution.
[0002]
[Prior art]
  For example, as shown in FIG. 19, a conventional substrate processing apparatus of this type holds a plurality of substrates W in a parallel state, and irradiates these substrates W with droplets of cleaning liquid from nozzles 100. While supplying, each substrate W is integrally rotated to clean both front and back surfaces of the substrate W as a cleaning surface.
[0003]
  That is, the conventional apparatus arranges the nozzles 100 in the arrangement direction of the substrates W at intervals wider than the pitch P of the substrates W, and the cleaning liquid droplets QS are obliquely applied to the cleaning surface of the substrates W. The droplets QS of the cleaning liquid sprayed and sprayed on the cleaning surface of the substrate W are connected to each other on the cleaning surface of the substrate W, and gradually increase, flow down the cleaning surface of the substrate W due to gravity, and the entire cleaning surface of the substrate W is cleaned with the cleaning liquid. It is configured to be washed.
[0004]
[Problems to be solved by the invention]
  However, the conventional example having such a configuration has the following problems.
  First, since the conventional apparatus sprays the cleaning liquid droplets QS from an oblique direction with respect to the cleaning surface of each substrate W, the cleaning liquid droplets QS from the nozzle 100 are only in the peripheral portion of the cleaning surface of each substrate W. Can only be sprayed directly on. Further, there is a difference in cleaning power between the portion where the cleaning liquid droplet QS from the nozzle 100 is directly sprayed and the portion where the cleaning liquid flows due to gravity. Therefore, in the conventional apparatus, there is a problem in that the cleaning accuracy differs between the vicinity of the peripheral portion and the central portion of the cleaning surface of the substrate W, and uniform cleaning cannot be performed on the entire cleaning surface of the substrate W.
[0005]
  Further, the locus of the cleaning liquid that flows down the cleaning surface of the substrate W due to gravity is very irregular. Therefore, the cleaning liquid may not be uniformly supplied to the entire cleaning surface of the substrate W, and a portion where the cleaning liquid is not supplied may be formed on the cleaning surface of the substrate W. Therefore, the entire cleaning surface of the substrate W is reliably cleaned with the cleaning liquid. There is also a problem that it is not guaranteed to do. In particular, when a hydrophilic part and a hydrophobic part are formed in the cleaning surface of the substrate W, for example, when a pattern is formed on the surface of the substrate W, the cleaning surface of the substrate W is moved by gravity. The cleaning liquid that flows down easily flows into the hydrophilic portion and hardly flows into the hydrophobic portion, and the entire cleaning surface of the substrate W cannot be reliably cleaned with the cleaning liquid.
[0006]
  Further, in the conventional apparatus, the portion to which the liquid droplets QS of the cleaning liquid from the nozzle 100 are directly sprayed is different for each cleaning surface of each substrate W due to the positional relationship of each cleaning surface of each substrate W with respect to the nozzle 100. Therefore, there is a difference in the cleaning accuracy for each cleaning surface of each substrate W, and there is a problem that uniform cleaning cannot be performed between the cleaning surfaces of each substrate W.
[0007]
  The present invention has been made in view of such circumstances, and the entire cleaning surface of the substrate can be uniformly cleaned. Also, when a plurality of substrates are cleaned simultaneously, each cleaning of each substrate is performed. It is an object of the present invention to provide a substrate processing apparatus that can evenly clean even between surfaces.
[0008]
[Means for Solving the Problems]
  In order to achieve such an object, the present invention has the following configuration.
  That is, the invention described in claim 1 is a substrate processing apparatus having a function of cleaning a cleaning surface of a substrate with a cleaning liquid, a substrate holding means for holding a substrate, a rotating means for rotating the substrate holding means, Cleaning liquid flow supply means for supplying a continuous cleaning liquid flow to the substrate so as to form a cleaning liquid flow that continuously flows along the cleaning surface of the substrate from the edge of the substrate, and the cleaning liquid flow supply The substrate holding means holding the substrate is rotated while supplying the continuous cleaning liquid flow from the means to the substrate held by the substrate holding means. At this time, the continuous cleaning liquid flow is applied to the cleaning surface of the substrate. The cleaning surface of the substrate passes through the center of rotation and is cleaned with a cleaning liquid, and one continuous cleaning liquid flow supplied from the cleaning liquid flow supply means to the substrate held by the substrate holding means At the edge of the board The continuous and distributed to the substrate so as to form a flow of cleaning liquid that is distributed on the front and back surfaces of the plate and flows continuously from the edge of the substrate along the cleaning surface of the substrate on each of the front and back surfaces of the substrate. A clean flow of cleaning liquid.
[0009]
  The invention described in claim 2 is a substrate processing apparatus having a function of cleaning a cleaning surface of a substrate with a cleaning liquid, a substrate holding means for holding the substrate in an upright posture, and a rotating means for rotating the substrate holding means; A cleaning liquid flow supplying means for supplying a continuous cleaning liquid flow to the substrate from the edge of the substrate along the cleaning surface of the substrate, and driving control of the rotating means. And cleaning control means for adjusting the supply condition of the cleaning liquid flow by adjusting the rotation condition of the substrate and adjusting and controlling the cleaning liquid flow supply means, and the cleaning control means stops the rotating means, When the substrate held in a standing posture on the substrate holding means is in a non-rotating state, the continuous cleaning liquid flow supplied to the substrate from the cleaning liquid flow supplying means isThe position that passes vertically above the center of rotation of the cleaning surface of the substrate is closer to the center of rotation of the cleaning surface of the substrate and the degree of hydrophobicity of the cleaning surface of the substrate is greater as the degree of hydrophilicity of the cleaning surface of the substrate is larger. The larger the distance, the farther from the center of rotation of the cleaning surface of the substrateWhen the substrate is rotated by rotating the rotating means by adjusting the supply condition of the cleaning liquid flow and adjusting the rotation condition of the substrate according to the supply condition of the cleaning liquid flow, the cleaning liquid flow is changed to the cleaning surface of the substrate. The cleaning surface of the substrate is cleaned with a cleaning liquid so as to pass through the center of rotation.
[0010]
  (Delete)
[0011]
  Claim 3The substrate processing apparatus having a function of cleaning the cleaning surface of the substrate with a cleaning liquid, the substrate holding means for holding the substrate, the rotating means for rotating the substrate holding means, and the end of the substrate A cleaning liquid flow supplying means for supplying a continuous cleaning liquid flow to the substrate so as to form a continuous cleaning liquid flow along the cleaning surface of the substrate; and a rotation condition of the substrate by driving and controlling the rotating means. And a cleaning control means for adjusting the supply condition of the cleaning liquid flow by adjusting and controlling the cleaning liquid flow supply means, and the cleaning control means holds the substrate from the cleaning liquid flow supply means when the substrate rotates. In the case of having a blocking member for temporarily interrupting the supply of the continuous cleaning liquid flow to the substrate across the continuous cleaning liquid flow supplied to the substrate held by the means, first, the continuous cleaning liquid The flow washes the substrate A first cleaning is performed in which the cleaning surface of the substrate is cleaned with a cleaning liquid, passing through the center of rotation of the surface, and then in the first cleaning, the continuous cleaning liquid flow supplied to the cleaning surface of the substrate is The supply condition of the cleaning liquid flow and / or the rotation condition of the substrate is set so that the continuous cleaning liquid flow flows with respect to the non-supplying portion of the cleaning liquid on the cleaning surface of the substrate that does not flow due to being blocked by the blocking member. By changing and adjusting, control is performed to perform the second cleaning in which the cleaning surface of the substrate is cleaned with the cleaning liquid.
[0012]
  Claim 4The invention described inAny one of claims 1 to 3In the substrate processing apparatus described above, the substrate holding unit is configured to hold a plurality of substrates, and the cleaning liquid flow supply unit is configured to perform the continuous cleaning for each cleaning surface of each substrate held by the substrate holding unit. It is configured to supply a simple cleaning liquid flow.
[0013]
  Claim 5The invention described inClaim 2 or 3In the described substrate processing apparatus, one continuous cleaning liquid flow supplied from the cleaning liquid flow supplying unit to the substrate held by the substrate holding unit is applied to only one cleaning surface on either the front or back side of the substrate. The continuous cleaning liquid flow is supplied to the substrate from the unit so as to form a cleaning liquid flow that flows continuously along the cleaning surface of the substrate.
[0014]
  Claim 6The invention described inClaim 1 or 2In the substrate processing apparatus described above, when the substrate is rotated, the continuous cleaning liquid flow to the substrate across the continuous cleaning liquid flow supplied from the cleaning liquid flow supply unit to the substrate held by the substrate holding unit. In the case of having a blocking member for temporarily blocking supply, after the blocking member crosses the continuous cleaning liquid flow supplied to the substrate, the continuous cleaning liquid flow supplied to the substrate becomes the blocking member. The cleaning surface of the substrate is cleaned with the cleaning liquid so that the cleaning liquid does not flow due to being blocked by the flow of the cleaning liquid on the cleaning surface of the substrate.
[0015]
  Claim 7The invention described inAny one of claims 1 to 6In the described substrate processing apparatus,
  A drying means for drying the substrate is further provided.
[0016]
[Action]
  Claim 1 and Claim 2Claim 3The operations common to the inventions described above are as follows.
  The substrate is held by the substrate holding means, and the cleaning liquid flow that continuously flows from the edge of the substrate along the cleaning surface of the substrate is formed on the substrate held by the substrate holding means from the cleaning liquid flow supply means. While supplying a continuous cleaning liquid flow, the substrate holding means and the substrate held thereby are rotated by the rotating means to clean the cleaning surface of the substrate with the cleaning liquid.
[0017]
  Here, with the rotation of the substrate, the trajectory of the cleaning liquid flowing along the cleaning surface of the substrate changes due to the centrifugal force and the surface tension generated between the cleaning surface of the substrate and the cleaning liquid. Therefore, by adjusting the supply condition of the cleaning liquid flow supplied to the cleaning surface of the substrate from the cleaning liquid flow supply means and the rotation condition of the substrate (substrate holding means) by the rotation means, the continuous cleaning liquid flow is applied to the cleaning surface of the substrate. The cleaning surface of the substrate is cleaned with a cleaning liquid so as to pass through the rotation center.
[0018]
  Although the cleaning liquid flow has a substantial width, it is only necessary that some part of the width of the cleaning liquid flow passes through the center of rotation of the cleaning surface of the substrate.
[0019]
  As a result, the cleaning liquid flow forms a continuous flow from one end of the cleaning surface of the substrate along the cleaning surface that passes through the center of rotation, and in this state, the substrate rotates. The cleaning liquid can be reliably supplied, and the entire cleaning surface of the substrate can be uniformly cleaned with the cleaning liquid.
[0020]
  The supply condition of the cleaning liquid flow includes the position of the cleaning liquid flow supply means, the supply direction of the continuous cleaning liquid flow supplied from the cleaning liquid flow supply means to the substrate, the flow rate of the cleaning liquid flow, and the like. The rotation condition includes a rotation direction and a rotation speed (rotation speed).
[0021]
  Depending on the supply conditions of the cleaning liquid flow, the trajectory of the cleaning liquid flow flowing on the cleaning surface of the substrate when the substrate is not rotating can be adjusted. Further, the direction in which the trajectory of the cleaning liquid flow changes with the rotation of the substrate can be adjusted by the rotation direction of the substrate, and the amount of change in the trajectory of the cleaning liquid flow with the rotation of the substrate can be adjusted by the number of rotations of the substrate. Note that the amount of change in the locus of the cleaning liquid flow accompanying the rotation of the substrate can also be adjusted by the flow rate of the cleaning liquid flow.
[0022]
  Furthermore, according to the first aspect of the present invention, one continuous cleaning liquid flow supplied from the cleaning liquid flow supplying means to the substrate held by the substrate holding means is formed by the front and back surfaces of the substrate at the edge of the substrate. A continuous cleaning liquid flow is supplied to the substrate so as to continuously flow along the front and back surfaces so as to pass through the center of rotation of each cleaning surface from one end of the substrate on each of the front and back surfaces of the substrate. .
[0023]
  Thus, one continuous cleaning liquid flow can be supplied for each substrate, and both the front and back surfaces of the substrate can be cleaned simultaneously as cleaning surfaces.
[0024]
  The operation of the invention described in claim 2 is as follows.
  The substrate holding means holds the substrate in an upright position, and when the substrate held in the standing position on the substrate holding means is in a non-rotating state, the continuous cleaning liquid flow supplied to the substrate from the cleaning liquid flow supplying means The supply condition of the cleaning liquid flow is adjusted so as to pass above the rotation center of the cleaning surface of the substrate on the vertical imaginary line passing through the rotation center of the surface, and the rotation condition of the substrate is adjusted according to the supply condition of the cleaning liquid flow The substrate is rotated while the cleaning surface of the substrate is cleaned with the cleaning liquid while supplying a continuous cleaning liquid flow to the substrate.
[0025]
  With respect to the cleaning liquid flow supply condition described above, the rotation direction of the substrate rotation condition is such that the cleaning liquid flow along the cleaning surface until it passes on the vertical imaginary line is changed downward. In this case, the cleaning liquid flow that continuously flows along the cleaning surface of the substrate during the rotation of the substrate can change the trajectory of the cleaning liquid flow in the direction toward the rotation center of the cleaning surface of the substrate. If the number of rotations of the substrate is adjusted appropriately, the cleaning liquid flow trajectory is adjusted so that the cleaning liquid flow that continuously flows along the cleaning surface of the substrate during the rotation of the substrate passes through the center of rotation of the cleaning surface of the substrate. Can be changed.
[0026]
  Here, depending on whether the surface state of the cleaning surface of the substrate is hydrophilic or hydrophobic as a whole, the trajectory of the cleaning liquid flow when the substrate is not rotating and the trajectory of the cleaning liquid flow accompanying the rotation of the substrate are changed. The amount is different.
[0027]
  That is, when the substrate is in a non-rotating state as described above, the cleaning liquid flow supply condition is such that the continuous cleaning liquid flow supplied to the substrate passes above the rotation center of the cleaning surface of the substrate on the vertical imaginary line. In this case, as the degree of hydrophilicity of the cleaning surface of the substrate increases, the kinetic energy in the horizontal direction of the cleaning liquid flowing along the cleaning surface is strongly reduced by the surface tension between the cleaning surface and the cleaning liquid. Therefore, the position where the continuous cleaning liquid flow supplied to the substrate passes on the vertical imaginary line is above the cleaning surface of the substrate and approaches the rotation center of the cleaning surface.
[0028]
  On the other hand, when the substrate is in a rotating state, the amount of change in the locus of the cleaning liquid flow accompanying the rotation of the substrate decreases as the cleaning liquid flow trajectory supplied to the substrate increases as the degree of hydrophilicity of the cleaning surface of the substrate increases. As the degree of sex increases, the amount of change increases.
[0029]
  Therefore, hydrophilicFor substrates with a high degree, when the substrate is not rotating, the continuous cleaning liquid flow supplied to the substrate passes on a vertical imaginary line above the center of rotation of the cleaning surface of the substrate and close to the center of rotation of the cleaning surface. In the rotation state, the trajectory of the cleaning liquid flow that flows along the cleaning surface of the substrate can be changed to pass through the rotation center of the cleaning surface of the substrate. On the other hand, in the case of a non-rotating state, in a substrate having a low hydrophilicity (high hydrophobicity), the continuous cleaning liquid flow supplied to the substrate is above the rotational center of the cleaning surface of the substrate on the vertical imaginary line. In this case, the trajectory of the cleaning liquid flowing along the cleaning surface of the substrate can be greatly changed to pass through the rotation center of the cleaning surface of the substrate when passing through a position far from the rotation center of the cleaning surface. . That is, by adjusting the supply condition of the cleaning liquid flow and the rotation condition of the substrate to a certain condition, the cleaning liquid flow is transferred to the substrate during the rotation of the substrate in both cases where the cleaning surface of the substrate is hydrophilic and hydrophobic. It is possible to adjust the cleaning surface to pass through the center of rotation. Further, even in a substrate in which a highly hydrophobic portion and a highly hydrophilic portion are mixed on the cleaning surface, the trajectory of the cleaning liquid flow can be adjusted so as to pass through the center of rotation of the cleaning surface.
[0030]
  Claim 3In the invention described in (4), for example, the substrate holding means is configured to hold a plurality of positions on the peripheral edge of the substrate with a plurality of holding members. The present invention relates to an apparatus having a blocking member (for example, a holding member) that temporarily interrupts the supply of the continuous cleaning liquid flow to the substrate across the continuous cleaning liquid flow supplied to the held substrate. In such a caseClaim 1 or 2When the cleaning surface of the substrate is cleaned according to the invention described in, each time the blocking member crosses the continuous cleaning liquid flow supplied to the substrate, the blocking member temporarily blocks the supply of the continuous cleaning liquid flow to the substrate. As a result, a cleaning liquid non-supply portion where the cleaning liquid does not partially flow is formed on the cleaning surface of the substrate, and the cleaning liquid may not be supplied uniformly to the cleaning surface of the substrate.
[0031]
  Claim 3According to the present invention, the supply condition of the cleaning liquid flow and / or the rotation condition of the substrate can be changed, and the cleaning control means first passes the continuous cleaning liquid flow through the rotation center of the cleaning surface of the substrate. Then, the first cleaning is performed to clean the cleaning surface of the substrate with the cleaning liquid. Next, in the first cleaning, the cleaning liquid is blocked by the blocking member blocking the continuous cleaning liquid flow supplied to the cleaning surface of the substrate. Change the supply condition of the cleaning liquid flow and / or the rotation condition of the substrate so that the continuous cleaning liquid flow will flow to the part where the cleaning liquid is not supplied on the cleaning surface of the substrate where the substrate is not supplied. It controls to perform the 2nd washing | cleaning wash | cleaned with a washing | cleaning liquid.
[0032]
  By cleaning the cleaning surface of the substrate in two stages as described above, the cleaning liquid can be uniformly supplied to the cleaning surface of the substrate.
[0033]
  Note that the cleaning liquid flow that flows on the cleaning surface of the substrate during the second cleaning is not limited to the cleaning surface of the substrate because a continuous cleaning liquid flow may flow in the cleaning liquid non-supply portion of the cleaning surface of the substrate. It is not necessary to pass through the center of rotation, and an optimal cleaning liquid flow trajectory that allows a continuous cleaning liquid flow to flow through a portion of the cleaning surface of the substrate not supplied with the cleaning liquid can be freely selected. Further, the second cleaning may be performed while changing and adjusting the supply condition of the cleaning liquid flow and the rotation condition of the substrate to various conditions.
[0034]
  Claim 4The invention described in 1 is an apparatus for simultaneously cleaning a plurality of substrates, and the operation thereof is as follows.
[0035]
  A plurality of substrates are held by the substrate holding means, and a continuous flow from one end of the substrate along the cleaning surface of the substrate is performed for each cleaning surface of each substrate held by the substrate holding means from the cleaning liquid flow supplying means. The substrate holding means and the plurality of substrates held by the rotating means are integrally rotated while supplying a continuous cleaning liquid flow so as to form a continuous flow along the cleaning surface of each substrate. The supply conditions of the cleaning liquid flow and the rotation conditions of the substrate are adjusted so that the cleaning liquid flow passes through the center of rotation of the cleaning surface of the substrate, and the cleaning surface of each substrate is simultaneously cleaned with the cleaning liquid.
[0036]
  Since each substrate is held and rotated integrally with the substrate holding means, the rotation conditions of each substrate can be made the same, and the supply condition of the continuous cleaning liquid flow supplied to the cleaning surface of each substrate, respectively. Can be adjusted so that the continuous cleaning liquid flow flowing along the cleaning surface of each substrate passes through the center of rotation of the cleaning surface of the substrate.
[0037]
  Claim 5According to the invention described in (1), one continuous cleaning liquid flow supplied from the cleaning liquid flow supplying means to the substrate held by the substrate holding means is applied to the edge portion of the substrate only on one of the front and back cleaning surfaces. Then, a continuous cleaning liquid flow is supplied to the substrate so as to form a continuous flowing cleaning liquid flow along the cleaning surface (front surface or back surface) of the substrate.
[0038]
  Thus, one continuous cleaning liquid stream can be individually supplied for each cleaning surface of the substrate.
[0039]
  In addition,Claim 5When the front and back surfaces of the substrate are simultaneously cleaned as the cleaning surfaces in the invention described in, the continuous cleaning liquid flow that flows continuously along only the front surface of the substrate and the continuous cleaning surface along only the back surface of the substrate. A continuous stream of cleaning fluid flowing through
[0040]
  Claim 6According to the invention described in (3), after the blocking member crosses the continuous cleaning liquid flow (the cleaning liquid flow passing through the rotation center of the cleaning surface of the substrate) supplied to the substrate, the continuous cleaning liquid supplied to the substrate The cleaning surface of the substrate is cleaned with the cleaning liquid such that the cleaning liquid flow is caused to flow through the cleaning liquid non-supplying portion of the cleaning surface of the substrate where the cleaning liquid flow does not flow due to the blocking member blocking.
[0041]
  Accordingly, even when the blocking member is provided, the cleaning liquid flow supply condition and the substrate rotation condition are adjusted to one predetermined condition, and the substrate is rotated while the continuous cleaning liquid flow is supplied to the substrate. The cleaning liquid can be uniformly supplied to the cleaning surface of the substrate by one cleaning.
[0042]
  Claim 7When the cleaning of the cleaning surface of the substrate is finished, the wet substrate to which the cleaning liquid is attached is dried by the drying means.
[0043]
DETAILED DESCRIPTION OF THE INVENTION
  Embodiments of the present invention will be described below with reference to the drawings.
  FIG. 1 is a longitudinal sectional view showing a configuration of a main part of a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a plan view thereof, and FIG. 3 is a sectional view showing a configuration of a holding member.
[0044]
  In this embodiment, a plurality of substantially circular substrates W such as semiconductor wafers are simultaneously cleaned and dried.
[0045]
  That is, the substrate holding mechanism 1 corresponding to the substrate holding means is configured to hold a plurality of substrates W in a standing state in a parallel state with an equal pitch. The substrate holding mechanism 1 includes a plurality (three in the figure) of rod-like holding members 2 that hold a plurality of locations at the peripheral edge of each substrate W. Each holding member 2 is configured such that a plurality of grooves 2a are formed at equal pitches on the inner surface, and the peripheral edge of the substrate W is inserted into each groove 2a so as to sandwich the substrate W from the periphery. At least one of the holding members 2 is configured to be switchable between a holding state in which the substrate W is held and a released state in which the holding of the substrate W is released away from the peripheral edge of the substrate W.
[0046]
  Each holding member 2 is supported between two flanges 3 arranged to face each other so as to be rotatable about an axis J in the horizontal direction. Each flange 3, each holding member 2, and each substrate W held by the substrate holding mechanism 1 are integrally rotated around the axis J by a motor 4 corresponding to a rotating means via a belt transmission mechanism BM and the like. It is configured as follows. Note that the belts may be directly connected without using the belt transmission mechanism BM. The motor 4 is configured to be able to arbitrarily change and adjust the rotation direction and the number of rotations. The center WC of the cleaning surface (front surface and / or back surface) of the substrate W held by the substrate holding mechanism 1 is aligned with the axis J, that is, the center WC of the cleaning surface and the rotation center of the substrate W are aligned. The held substrate W may be rotated around the center WC of the cleaning surface so as to coincide with WJ, or the center WC of the cleaning surface of the held substrate W may be changed from the rotation center WJ of the substrate W. The held substrate W may be slightly shifted (several millimeters) to be eccentric with respect to the center WC of the cleaning surface and rotated. When the held substrate W is decentered with respect to the center WC of the cleaning surface and rotated, vibration of the substrate W can be suppressed during the rotation.
[0047]
  Further, for each cleaning surface of each substrate W held by the substrate holding mechanism 1, a continuous cleaning liquid flow Q that continuously flows along the cleaning surface of the substrate W from one end portion of the substrate W to another end portion. Is provided with a cleaning liquid flow supply mechanism 5 corresponding to a cleaning liquid flow supply means.
[0048]
  The cleaning liquid flow supply mechanism 5 includes a supply head 6 disposed at a peripheral position of the substrate W held by the substrate holding mechanism 1, a supply pipe 7, an on-off valve 8, a flow rate adjusting valve 9, and the like. Yes.
[0049]
  The supply head 6 of the embodiment shown in FIGS. 1 and 2 has a plurality of discharge holes 6b formed in a hollow tubular member 6a closed at both ends, and each of the cleaning liquids filled in the tubular member 6a is discharged. Each of the holes 6b is pushed out, and a continuous cleaning liquid flow Q is individually discharged from each discharge hole 6b. Thus, a continuous cleaning liquid flow Q is supplied to each cleaning surface of each substrate W held by the substrate holding mechanism 1.
[0050]
  A cleaning liquid is supplied into the tubular member 6 a from a cleaning liquid supply source (not shown) via the supply pipe 7. Examples of the cleaning liquid include pure water (for rinse cleaning), chemical liquid (for chemical liquid cleaning), etching liquid (for thin film removal cleaning), and the like.
[0051]
  The supply pipe 7 is provided with an on-off valve 8 and a flow rate adjusting valve 9. By opening / closing the on-off valve 8, the supply and stop of the cleaning liquid into the tubular member 6a (the supply and stop of the cleaning liquid flow Q from each discharge hole 6b to each substrate W) are switched. Further, by adjusting the flow rate of the cleaning liquid supplied into the tubular member 6a by the flow rate adjusting valve 9, the flow rate of the continuous cleaning liquid flow Q supplied to each substrate W from each discharge hole 6b can be adjusted. . In addition, when the flow rate adjustment valve 9 is configured to be capable of adjusting the flow rate so that the supply of the cleaning liquid into the tubular member 6a can be stopped and can also function as the on-off valve 8, the on-off valve 8 may be omitted. .
[0052]
  Further, the cleaning liquid flow supply means is not limited to the above configuration. For example, as shown in FIG. 4, the supply head 6 includes a plurality of nozzles 6c configured to discharge a continuous cleaning liquid flow Q, and supplies the cleaning liquid individually to the nozzles 6c. The configuration may be such that the cleaning liquid flow Q is individually supplied from each nozzle 6c to each substrate W. In addition, the code | symbol 7, 8, 9 in FIG. 4 shows a supply pipe | tube, an on-off valve, and a flow regulating valve similarly to FIG. 1, FIG. In addition, as shown in FIG. 4, when the continuous cleaning liquid flow Q is individually supplied from each nozzle 6c to each substrate W, there are the following advantages.
[0053]
  When the substrate holding mechanism 1 holds and cleans a smaller number of substrates W (for example, 50) than the maximum number of substrates held (for example, 50), when the supply head 6 is constituted by the tubular member 6a provided with the discharge holes 6b, each discharge Since the supply / stop of the cleaning liquid flow Q from the hole 6b is performed integrally, the cleaning liquid flow Q is supplied also to the holding position of the substrate W that is not actually held by the substrate holding mechanism 1, and the cleaning liquid is wasted. May be used for On the other hand, in the configuration shown in FIG. 4, since supply / stop of the cleaning liquid flow Q from each nozzle 6c can be switched individually, the cleaning liquid flow is applied only to the substrate W actually held in the substrate holding mechanism 1. Q can be supplied, and useless use of the cleaning liquid can be eliminated.
[0054]
  Here, the supply form of the cleaning liquid flow Q to the substrate W will be described with reference to FIG. FIG. 5 shows a supply form in the case where the cleaning liquid flow Q is supplied to both the front and back surfaces of the substrate W.
[0055]
  FIG. 5A shows a first supply form. In this first supply mode, one continuous cleaning liquid flow Q supplied from the supply head 6 constituting the cleaning liquid flow supply mechanism 5 to the substrate W held by the substrate holding mechanism 1 is the substrate at the edge of the substrate W. Distributed to the front surface and the back surface of W, and continuously flows to the substrate W so that the front and back surfaces of the substrate W continuously flow from one end of the substrate W to the other end along the front and back surfaces. A cleaning liquid flow Q is supplied.
[0056]
  In the case of implementing this first supply mode, in order to distribute the cleaning liquid flow Q to the front and back surfaces of the substrate W approximately equally, the thickness QW of the cleaning liquid flow Q (the dimension of the substrate W in the thickness WW direction) direction. It is preferable to make the center QWC substantially coincide with the center WWC in the thickness WW direction of the held substrate W. Further, in order to prevent the cleaning liquid flow Q hitting the edge of the substrate W from scattering to the surroundings, the thickness QW of the cleaning liquid flow Q is increased (for example, thicker than the thickness WW of the substrate W). It is preferable to make the flow rate as slow as possible.
[0057]
  According to the first supply mode, by supplying one continuous cleaning liquid flow Q for each substrate W, both the front and back surfaces of the substrate W can be simultaneously cleaned as the cleaning surfaces. If one ejection hole 6b and one nozzle 6c are provided for each, both the front and back surfaces of the substrate W can be cleaned at the same time, compared with the case where the front and back surfaces of the substrate W are simultaneously cleaned in the second supply mode described below. Thus, the number of the discharge holes 6b and the nozzles 6c can be reduced to half, the structure of the cleaning liquid flow supply mechanism 5 can be simplified, and the front and back surfaces of the substrate W can be cleaned simultaneously.
[0058]
  FIG. 5B shows a second supply form. In this second supply mode, one continuous cleaning liquid flow Q supplied from the supply head 6 constituting the cleaning liquid flow supply mechanism 5 to the substrate W held by the substrate holding mechanism 1 is supplied from one end of the substrate W. A continuous cleaning liquid flow Q is supplied to the substrate W so as to continuously flow along only one cleaning surface toward another end.
[0059]
  FIG. 5B shows a case where both the front and back surfaces of the substrate W are simultaneously cleaned as the cleaning surfaces. In this case, as shown in the drawing, the substrate W is directed from one end portion to another end portion. A continuous cleaning liquid flow Q that flows continuously along only the front surface of W, and a continuous cleaning liquid flow Q that flows continuously along only the back surface of the substrate W from one end of the substrate W to another end. And supply separately.
[0060]
  In the case of an apparatus for cleaning only one surface of the substrate W, only one cleaning liquid flow Q of the two cleaning liquid flows Q supplied to one substrate W shown in FIG. It may be configured to supply to the substrate W.
[0061]
  In the second supply mode, the discharge holes 6b and the nozzles 6c for individually supplying the cleaning liquid flow Q are provided for each cleaning surface of each substrate W.
[0062]
  When the front and back surfaces of the substrate W are simultaneously cleaned in this second supply mode, the cleaning liquid flow Q is individually supplied to the front and back surfaces of each substrate W by one cleaning liquid flow supply mechanism 5. Alternatively, the cleaning liquid flow supply mechanism 5 that supplies the cleaning liquid flow Q individually to the front surface of each substrate W and the cleaning liquid flow supply mechanism 5 that supplies the cleaning liquid flow Q individually to the back surface of each substrate W are separated. The supply head 6 of each cleaning liquid flow supply mechanism 5 may be installed at different positions.
[0063]
  That is, when the supply head 6 is constituted by the tubular member 6a provided with the discharge holes 6b, the discharge holes 6b for individually supplying the cleaning liquid flow Q to the front and back surfaces of each substrate W may be provided in one tubular member 6a. Alternatively, the tubular member 6a provided with the discharge holes 6b for supplying the cleaning liquid flow Q individually to the front surface of each substrate W and the discharge holes 6b for supplying the cleaning liquid flow Q individually to the back surface of each substrate W were provided. The tubular member 6a may be formed separately, and may be configured to be installed at a position different from each tubular member 6a (supply head 6).
[0064]
  In the configuration shown in FIG. 4, the group of nozzles 6c that individually supply the cleaning liquid flow Q to the front and back surfaces of each substrate W may be handled integrally to determine the installation position of the group of nozzles 6c. A group of nozzles 6c that individually supply the cleaning liquid flow Q to the front surface of each substrate W and a group of nozzles 6c that individually supply the cleaning liquid flow Q to the back surface of each substrate W are divided into groups of nozzles 6c. You may decide the installation position of each.
[0065]
  When the front and back supply heads 6 are installed at different positions, the cleaning liquid flow Q flowing on the surface of the substrate W and the cleaning liquid flow flowing on the back surface of the substrate W when the substrate W is not rotated. The locus of Q is different. As will be described later, at the time of cleaning, the substrate W is rotated to change the trajectory of the cleaning liquid flow Q flowing along the cleaning surface (front and back surfaces) of the substrate W, so that the cleaning liquid flow Q is the rotation center of the cleaning surface of the substrate W. Even if the trajectory of the cleaning liquid flow Q is different between the front surface and the back surface of the non-rotating substrate W by adjusting the supply condition of the cleaning liquid flow Q described later, the rotation of the substrate W is performed. It is sometimes possible to adjust the cleaning liquid flow Q to pass through the center of rotation WJ of each surface of the substrate W on each surface.
[0066]
  According to the second supply mode, the continuous cleaning liquid flow Q supplied to each cleaning surface of the substrate W can be individually adjusted. For example, the continuous cleaning liquid flow Q is applied to both the front and back surfaces of the substrate W. When supplying, each cleaning liquid flow Q can be adjusted with high accuracy. Further, since the continuous cleaning liquid flow Q is not applied to the edge of the substrate W as in the first supply form, it is possible to suppress the cleaning liquid from scattering from the edge of the substrate W to the surroundings.
[0067]
  Further, if the front surface cleaning liquid flow supply mechanism 5 and the rear surface cleaning liquid flow supply mechanism 5 are configured separately, the supply of the cleaning liquid flow Q to the front and back surfaces, only the front surface, and only the back surface of each substrate W can be switched. A single apparatus can be switched between front and back surface cleaning, front surface cleaning, and back surface cleaning.
[0068]
  FIG. 6 is a block diagram showing the configuration of the control system of the apparatus.
  The controller 10 composed of a computer or the like controls the holding and releasing of the substrate W by the substrate holding mechanism 1 and the driving control of the motor 4 (rotation / stop and control of rotation direction and number of rotations during rotation), By performing opening / closing control of the opening / closing valve 8, adjustment control of the supply flow rate by the flow rate adjusting valve 9, etc., cleaning and drying of each substrate W described later are executed. In addition, this controller 10 isClaim 7In the case of having the function of the drying means in the invention described in the above and implementing the second cleaning mode described later,Claim 3It has the function of the washing | cleaning control means in invention described in (1).
[0069]
  Next, the operation of the embodiment apparatus having the above configuration will be described.
  First, the controller 10 controls each part as follows to clean the cleaning surface of the substrate W with the cleaning liquid.
[0070]
  That is, the substrate W carried into the apparatus is held by the substrate holding mechanism 1, and from one end of the substrate W to another end for each cleaning surface of each substrate W held by the substrate holding mechanism 1 from the cleaning liquid flow supply mechanism 5. The substrate holding mechanism 1 and a plurality of substrates W held by the motor 4 are integrally rotated by the motor 4 while supplying a continuous cleaning liquid flow Q that continuously flows along the cleaning surface of the substrate W toward the portion. Thus, the cleaning surface of each substrate W is simultaneously cleaned with the cleaning liquid.
[0071]
  Here, the cleaning liquid flow Q flowing along the cleaning surface of the substrate W due to the surface tension and centrifugal force with the substrate W rotating with the rotation of the substrate W is a non-rotating locus indicated by TS in FIG. The trajectory changes as depicted in the trajectory during rotation indicated by TR.
[0072]
  Therefore, the supply conditions of the cleaning liquid flow Q supplied from the supply head 6 of the cleaning liquid flow supply mechanism 5 to the cleaning surface of each substrate W and the rotation conditions of the substrate W (substrate holding mechanism 1) by the motor 4 will be described later. The continuous cleaning liquid flow Q flowing along the cleaning surface of each substrate W is adjusted to pass through the rotation center WJ of each substrate W, and the cleaning surface of each substrate W is cleaned with the cleaning liquid. .
[0073]
  Note that the cleaning liquid flow Q substantially has a width QD (a dimension extending in the direction of the cleaning surface of the substrate W), but somewhere in the width QD of the cleaning liquid flow Q is the rotation center of the cleaning surface of the substrate W. It only needs to pass WJ.
[0074]
  Accordingly, the cleaning liquid flow Q continuously flows along the cleaning surface from one end portion of the cleaning surface of the substrate W to the other end portion through the rotation center WJ, and rotates the substrate W in this state. Therefore, the cleaning liquid can be reliably supplied to the entire cleaning surface of the substrate W, and the entire cleaning surface of the substrate W can be uniformly cleaned with the cleaning liquid.
[0075]
  In addition, in the conventional apparatus, since the supply of the cleaning liquid to the entire cleaning surface of the substrate W is uncertain, if the cleaning liquid is to be reliably supplied to the entire cleaning surface of the substrate W, the cleaning time must be lengthened. Along with this, the amount of cleaning liquid used increases, and many of them are wasted. On the other hand, according to this embodiment, it is possible to reliably supply the cleaning liquid to the entire cleaning surface of the substrate W in a short time, with a small amount of cleaning liquid, and by reducing the use of unnecessary cleaning liquid. It becomes possible.
[0076]
  Furthermore, according to this embodiment, the cleaning of a plurality of substrates W can be performed simultaneously. In addition, since the cleaning liquid flow Q is individually supplied to each cleaning surface of each substrate W, the cleaning surfaces of each substrate W can be uniformly cleaned, and the cleaning surfaces between the cleaning surfaces of each substrate W can be uniform. Cleaning can be made uniform.
[0077]
  The supply condition of the cleaning liquid flow Q includes the position of the supply head 6 constituting the cleaning liquid flow supply mechanism 5 and the continuous cleaning liquid supplied to the substrate W from the supply head 6 (discharge hole 6b and nozzle 6c). The rotation direction of the substrate W includes the rotation direction and the number of rotations, including the supply direction of the flow Q, the flow rate of the cleaning liquid flow Q, and the like.
[0078]
  Depending on the supply conditions of the cleaning liquid flow Q, the trajectory TS of the cleaning liquid flow Q flowing on the cleaning surface of the substrate W when the substrate W is not rotated can be adjusted. Further, the change direction F between the trajectory TS-TR of the cleaning liquid flow Q accompanying the rotation of the substrate W can be adjusted by the rotation direction WR of the substrate W, and the cleaning liquid flow Q accompanying the rotation of the substrate W can be adjusted by the rotation speed of the substrate W. The amount of change E between the tracks TS-TR can be adjusted. Note that the amount of change E between the trajectory TS-TR of the cleaning liquid flow Q accompanying the rotation of the substrate W can also be adjusted by the flow rate of the cleaning liquid flow Q.
[0079]
  Here, an example of the relationship between the trajectory TS of the cleaning liquid flow Q when the substrate W is not rotating, the rotational direction WR of the substrate W, and the change direction F between the trajectory TS-TR of the cleaning liquid flow Q accompanying the rotation of the substrate W. Is shown in FIGS.
[0080]
  7 and 8 show an example in which the cleaning liquid flow Q is supplied from the side of the substrate W held in a standing posture on the substrate holding mechanism 1.
[0081]
  FIGS. 7A and 7B show the rotation center WJ of the cleaning surface of the substrate W when the cleaning liquid flow Q flowing through the cleaning surface of the substrate W is viewed toward the cleaning surface of the substrate W when the substrate W is not rotating. A locus TS is formed that passes above the rotation center WJ of the cleaning surface of the substrate W from the right side toward the left side on the vertical imaginary line VL passing through. 7C and 7D show that the cleaning liquid flow Q flowing on the cleaning surface of the substrate W when the substrate W is not rotating is above the rotation center WJ of the cleaning surface of the substrate W on the vertical imaginary line VL. The case where the locus | trajectory TS which passes the side toward the right side from the left side is shown is shown.
[0082]
  FIGS. 8A to 8D show that the cleaning liquid flow Q flowing on the cleaning surface of the substrate W when the substrate W is not rotating is below the rotation center WJ of the cleaning surface of the substrate W on the vertical imaginary line VL. FIGS. 8A and 8B show a case where a trajectory TS that passes is passed, and FIGS. 8C and 8B show the case where the cleaning liquid flow Q passes the vertical imaginary line VL from the right side to the left side. (D) and (d) respectively show the case where the cleaning liquid flow Q passes through the vertical imaginary line VL from the left side to the right side.
[0083]
  7A, 7B, 8C, and 8D, when the rotation direction WR of the substrate W is viewed toward the cleaning surface of the substrate W, the rotation direction rotates clockwise. In the case of FIGS. 7C, 7D, 8A, and 8B, the rotation of the substrate W is reversed if the rotation direction WR of the substrate W is the rotation direction that rotates counterclockwise. At this time, the cleaning liquid flow Q flowing through the cleaning surface of the substrate W can change the trajectory in the direction of passing through the center of rotation WJ through the cleaning surface of the substrate W.
[0084]
  Further, the cleaning liquid flow Q is not limited to the case where the cleaning liquid flow Q is supplied from the side of the substrate W held in the standing posture by the substrate holding mechanism 1, but is supplied (flowed down) from above the substrate W as shown in FIG. It may be configured. In this case, the cleaning liquid flow Q is supplied so that the cleaning liquid flow Q flowing on the cleaning surface of the substrate W when the substrate W is not rotated flows from a position shifted to the left and right with respect to the vertical imaginary line VL. FIG. 9A shows a case where the cleaning liquid flow Q is caused to flow down at a position shifted to the left with respect to the vertical imaginary line VL. In this case, if the substrate W is rotated clockwise, the substrate W The trajectory can be changed in the direction in which the cleaning liquid flow Q flowing through the cleaning surface of the substrate W passes through the rotation center WJ of the cleaning surface of the substrate W at the time of rotation. FIG. 9B shows a case where the cleaning liquid flow Q is caused to flow down at a position shifted to the right side with respect to the vertical imaginary line VL. In this case, the substrate W can be rotated counterclockwise. For example, the trajectory of the cleaning liquid flow Q flowing through the cleaning surface of the substrate W during the rotation of the substrate W can be changed in a direction passing through the cleaning center of the substrate W through the rotation center WJ.
[0085]
  Based on the above, the rotation of the substrate W for changing the cleaning liquid flow Q in the direction of passing the rotation center WJ of the cleaning surface when the substrate W rotates according to the trajectory TS of the cleaning liquid flow Q when the substrate W is not rotating. The direction WR can be determined. Conversely, the rotation direction WR of the substrate W may be determined in advance, and the trajectory TS (the supply condition of the cleaning liquid flow Q) of the cleaning liquid flow Q when the substrate W is not rotating may be adjusted accordingly.
[0086]
  Further, the amount of change E between the traces TS-TR of the cleaning liquid flow Q accompanying the rotation of the substrate W increases as the number of rotations of the substrate W increases (the rotation speed increases), and as the flow rate of the cleaning liquid flow Q decreases. growing.
[0087]
  Therefore, according to the trajectory TS of the cleaning liquid flow Q at the time of non-rotation, the trajectory of the cleaning liquid flow Q is changed by an amount of change that changes the cleaning liquid flow Q so as to pass the rotation center WJ of the cleaning surface when the substrate W rotates. Conditions such as the number of rotations of the substrate W and the flow rate of the cleaning liquid flow Q can be obtained experimentally, for example. Conversely, conditions such as the number of rotations of the substrate W and the flow rate of the cleaning liquid flow Q may be determined in advance, and the trajectory TS of the cleaning liquid flow Q when the substrate W is not rotating may be adjusted accordingly.
[0088]
  Based on the above, the arrangement position of the supply head 6 and the supply direction of the continuous cleaning liquid flow Q supplied from the supply head 6 to the substrate W are adjusted, and the controller 10 sets the flow rate of the cleaning liquid flow Q to a desired flow rate. If the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W are adjusted by controlling the flow rate adjusting valve 9 and driving the motor 4 in a desired rotation direction WR and rotation speed, the substrate W is rotated. The cleaning liquid flow Q can be adjusted so as to pass through the rotation center WJ of the cleaning surface. When the cleaning liquid flow supply mechanism 5 is configured as shown in FIG. 4, the flow rates of the cleaning liquid flow Q supplied from the nozzles 6c are adjusted to be the same flow rate.
[0089]
  By the way, considering the surface condition of the cleaning surface of the substrate W, the amount of change E between the trajectory TS of the cleaning liquid flow Q when the substrate W is not rotating and the trajectory TS-TR of the cleaning liquid flow Q accompanying the rotation of the substrate W is calculated. Considering, for example, the entire cleaning surface of the substrate W is hydrophilic or averagely hydrophilic (overall hydrophilic), or the entire cleaning surface is hydrophobic or averagely hydrophobic. Depending on whether the substrate W is non-rotating or not (the entire surface is hydrophobic), the trajectory TS of the cleaning liquid flow Q when the substrate W is not rotating and the variation E between the trajectory TS-TR of the cleaning liquid flow Q accompanying the rotation of the substrate W are different. .
[0090]
  That is, as the degree of hydrophilicity of the cleaning surface of the substrate W increases, the surface tension of the cleaning liquid flow Q with respect to the cleaning surface of the substrate W increases, and the amount of decrease in the horizontal kinetic energy of the cleaning liquid flow Q increases. To go.
[0091]
  As a result, for example, as shown in FIGS. 7 and 8, when supplying the cleaning liquid flow Q from the side of the substrate W held in the standing posture to the substrate holding mechanism 1, when the supply conditions of the cleaning liquid flow Q are the same, The position of the cleaning liquid flow Q when the substrate W is not rotated passes on the vertical imaginary line VL downward as the degree of hydrophilicity of the cleaning surface of the substrate W increases.
[0092]
  On the other hand, as the degree of hydrophilicity of the cleaning surface of the substrate W increases due to the surface tension of the cleaning liquid flow Q with respect to the cleaning surface of the substrate W, the amount of change E between the traces TS-TR of the cleaning liquid flow Q accompanying the rotation of the substrate W is increased. Becomes smaller.
[0093]
  Here, for example, when the substrate W is not rotated, the cleaning liquid flow Q is always the center of rotation of the cleaning surface of the substrate W on the vertical virtual line VL as shown in FIG. 8 regardless of the surface state of the cleaning surface. Considering the case of passing below the WJ, as shown in FIG. 10A, the trajectory TSA of the cleaning liquid flow Q during non-rotation of the substrate W whose cleaning surface is entirely hydrophilic is the cleaning surface. Compared to the trajectory TSB of the cleaning liquid flow Q when the substrate W, which is entirely hydrophobic, is below the rotation center WJ of the cleaning surface of the substrate W on the vertical imaginary line VL, the cleaning surface The trajectory goes away from the center of rotation WJ. On the other hand, in FIG. 10A, when the substrate W is rotated counterclockwise, the amount of change EA between the trajectories TSA-TRA of the cleaning liquid flow Q accompanying the rotation of the substrate W whose cleaning surface is entirely hydrophilic is The amount of change EB between the traces TSB-TRB of the cleaning liquid flow Q accompanying the rotation of the substrate W whose cleaning surface is entirely hydrophobic is smaller (EA <EB).
[0094]
  Therefore, for example, as shown in FIG. 10A, the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W are the same as those when the substrate W is rotated with respect to the substrate W whose cleaning surface is entirely hydrophobic. When the track TRB of the cleaning liquid flow Q is adjusted so as to pass through the rotation center WJ of the cleaning surface of the substrate W, the substrate W whose cleaning surface is entirely hydrophilic is cleaned under the same condition. The trajectory TRA of the cleaning liquid flow Q at that time passes below the rotation center WJ of the cleaning surface of the substrate W on the vertical imaginary line VL, and does not pass the rotation center WJ of the cleaning surface of the substrate W.
[0095]
  Conversely, the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W are as follows. The trajectory TRA of the cleaning liquid flow Q when the substrate W rotates is the substrate W with respect to the substrate W whose cleaning surface is entirely hydrophilic. When the substrate W whose cleaning surface is entirely hydrophobic is cleaned under the same conditions when the condition is adjusted so as to pass the rotation center WJ of the cleaning surface, the locus of the cleaning liquid flow Q when the substrate W rotates The TRB passes above the rotation center WJ of the cleaning surface of the substrate W at the vertical imaginary line VL and does not pass the rotation center WJ of the cleaning surface of the substrate W.
[0096]
  Further, the trajectory of the cleaning liquid flow Q at the time of non-rotation of the substrate W whose cleaning surface is entirely hydrophilic passes below the rotation center WJ of the cleaning surface of the substrate W on the vertical imaginary line VL. The trajectory of the cleaning liquid flow Q when the substrate W whose cleaning surface is entirely hydrophobic does not rotate passes above the rotation center WJ of the cleaning surface of the substrate W on the vertical imaginary line VL. When the position of the cleaning liquid flow Q when the substrate W is not rotating varies on the vertical imaginary line VL varies up and down across the rotation center WJ of the cleaning surface, depending on the surface state of the cleaning surface of W. This makes it impossible to change the cleaning liquid flow Q so as to pass through the rotation center WJ of the cleaning surface of the substrate W in the same rotation direction.
[0097]
  Further, as shown in FIG. 9, when the cleaning liquid flow Q is caused to flow down from above the substrate W, the substrate W is not rotated regardless of whether the cleaning surface is entirely hydrophilic or hydrophobic. The trajectory of the cleaning liquid flow Q does not change. However, when the substrate W is rotated, the substrate W whose cleaning surface is entirely hydrophilic is compared with the substrate W whose cleaning surface is generally hydrophobic. The amount of change E of the locus of the cleaning liquid flow Q at the time of rotation is small. Therefore, for example, when the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W are adjusted according to the substrate W whose cleaning surface is entirely hydrophilic (or hydrophobic), the cleaning surface When the substrate W that is entirely hydrophobic (or hydrophilic) is cleaned, the trajectory of the cleaning liquid flow Q during rotation does not pass through the rotation center WJ of the cleaning surface of the substrate W.
[0098]
  Here, at the time of non-rotation, the cleaning liquid flow Q is always above the rotation center WJ of the cleaning surface of the substrate W on the vertical imaginary line VL as shown in FIG. 7 regardless of the surface state of the cleaning surface. As shown in FIG. 10B, the trajectory TSA of the cleaning liquid flow Q during non-rotation of the substrate W whose cleaning surface is hydrophilic as a whole is hydrophobic as shown in FIG. Compared with the trajectory TSB of the cleaning liquid flow Q when the substrate W is not rotating, it is above the rotation center WJ of the cleaning surface of the substrate W and above the rotation center WJ of the substrate W on the vertical imaginary line VL. It will take a close track. On the other hand, in FIG. 10B, when the substrate W is rotated clockwise, the amount of change EA between the traces TSA-TRA of the cleaning liquid flow Q accompanying the rotation of the substrate W whose cleaning surface is entirely hydrophilic is The amount of change EB between the traces TSB-TRB of the cleaning liquid flow Q accompanying the rotation of the substrate W whose cleaning surface is entirely hydrophobic is smaller (EA <EB).
[0099]
  Therefore, in this case, in the substrate W whose cleaning surface is hydrophilic as a whole, the cleaning liquid flow Q is above the rotation center WJ of the cleaning surface of the substrate W on the vertical phantom line VL when in the non-rotating state. When passing through a position close to the rotation center WJ of the cleaning surface and in a rotating state, the trajectory TSA of the cleaning liquid flow Q can be changed slightly to pass the rotation center WJ of the cleaning surface of the substrate W. On the other hand, in the substrate W whose cleaning surface is entirely hydrophobic, in the non-rotating state, the cleaning liquid flow Q is above the rotation center WJ of the cleaning surface of the substrate W on the vertical virtual line VL and When passing through a position far from the rotation center WJ and in a rotating state, the trajectory TSB of the cleaning liquid flow Q can be greatly changed to pass the center of the cleaning surface of the substrate W.
[0100]
  That is, when the substrate W is not rotated, the cleaning liquid flow Q is always the rotation center WJ of the cleaning surface of the substrate W on the vertical imaginary line VL, as shown in FIG. 10B, regardless of the surface state of the substrate W. In the case where the trajectory TS passes through the upper side, the cleaning condition of the cleaning surface of the substrate W is made hydrophobic by adjusting the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W to certain conditions. In both cases, the cleaning liquid flow Q can be adjusted so as to pass through the rotation center WJ of the cleaning surface of the substrate W at the time of cleaning. Further, even in the case of a substrate W in which a highly hydrophobic portion and a highly hydrophilic portion are mixed on the cleaning surface, the locus of the cleaning liquid flow Q can be adjusted so as to pass through the rotation center WJ of the cleaning surface.
[0101]
  More precisely, the distance between the passing position of the cleaning liquid flow Q passing over the vertical imaginary line VL when the substrate W is not rotating and the rotation center WJ of the cleaning surface, and the cleaning liquid flow accompanying the rotation of the substrate W The change amount E between the trajectories TS-TR of Q is not linearly related to the degree of hydrophilicity of the cleaning surface. For example, as shown in FIG. 11A, three degrees C1 (high degree of hydrophilicity), C2 (medium degree of hydrophilicity), and C3 (low degree of hydrophilicity) having different degrees of hydrophilicity of the cleaning surface: Considering the substrate W which is hydrophobic, the following results are obtained. Note that a trajectory TS1 in FIG. 11A indicates a trajectory of the cleaning liquid flow Q when the substrate W whose cleaning surface has a degree of hydrophilicity C1 is not rotating, and similarly, the trajectories TS2 and TS3 are the surface of the cleaning surface. The locus | trajectory of the washing | cleaning liquid flow Q at the time of the non-rotation of the board | substrate W whose hydrophilicity degree is C2 and C3 is shown.
[0102]
  In FIG. 11A, for example, for each of the substrates W having two degrees C1 and C3 having different degrees of hydrophilicity on the cleaning surface, the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W are set under certain conditions. 11 (b) and 11 (c), for example, the center QDC in the width QD of the cleaning liquid flow Q during the cleaning passes through the rotation center WJ of the cleaning surface of the substrate W as shown in FIGS. Although it is possible to change the cleaning liquid flow Q of each substrate W, under the same conditions, when the substrate W having a degree of hydrophilicity of the cleaning surface different from the above two degrees C1 and C3 is cleaned, As shown in FIG. 11D, the center QDC within the width QD of the cleaning liquid flow Q passes through a position deviating from the rotation center WJ of the cleaning surface of the substrate W during cleaning.
[0103]
  However, since the cleaning liquid flow Q has a width QD, the variation in the passing position of the cleaning liquid flow Q during cleaning with respect to various degrees of hydrophilicity of the cleaning surface can be absorbed in the width QD. Therefore, if the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W are adjusted to certain conditions, the width QD of the cleaning liquid flow Q during cleaning can be obtained even when the substrate W having different degrees of hydrophilicity on the cleaning surface is cleaned. It is possible to change the cleaning liquid flow Q of each substrate W so that some of them pass through the rotation center WJ of the cleaning surface of the substrate W.
[0104]
  In consideration of the above, when the substrate W is cleaned while being held in an upright position, the cleaning liquid flow Q is cleaned on the vertical imaginary line VL when the substrate W is not rotated, as shown in FIG. The supply condition of the cleaning liquid flow Q is adjusted so that the trajectory TS passes through the upper side of the rotation center WJ, and the rotation condition of the substrate W can be adjusted according to the supply condition of the cleaning liquid flow Q. preferable.
[0105]
  The rotation direction WR of the rotation conditions of the substrate W with respect to the supply condition of the cleaning liquid flow Q described above is the cleaning liquid flow Q that continuously flows along the cleaning surface of the substrate W before passing over the vertical imaginary line VL. The substrate W so that the portion of the substrate W in contact with the cleaning liquid flow Q moves downward before the cleaning liquid flow Q passes through the vertical imaginary line VL. Specifically, it is determined in accordance with the direction of the flow of the cleaning liquid flow Q that passes on the vertical imaginary line VL as described above with reference to FIG.
[0106]
  In this way, by adjusting the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W, the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W with respect to the substrate W on the cleaning surface having different overall hydrophilicity levels. Can be adjusted so that the cleaning liquid flow Q passes through the center of rotation WJ of the cleaning surface of the substrate W during cleaning, and the supply condition of the cleaning liquid flow Q depends on the surface state of the cleaning surface of the substrate W. In addition, uniform cleaning can be performed without changing and adjusting the rotation conditions of the substrate W.
[0107]
  Moreover, when the state at the time of cleaning in the configuration of the embodiment shown in FIG. 1 and FIG. 2 is more strictly examined, the substrate W is held at a plurality of positions on the peripheral edge of the substrate W by the plurality of holding members 2. Each of these holding members 2Claims 3 and 6The continuous cleaning liquid flow Q that is supplied to the substrate W held by the substrate holding mechanism 1 from the supply head 6 of the cleaning liquid flow supply mechanism 5 when the substrate W rotates is successively applied when the substrate W is rotated. The supply of the continuous cleaning liquid flow Q across the substrate W is temporarily interrupted, and the cleaning liquid is not supplied so that the cleaning liquid does not partially flow on the cleaning surface of the substrate W, as shown by hatching in FIGS. The portion NQ is formed, and the cleaning liquid cannot be uniformly supplied to the cleaning surface of the substrate W.
[0108]
  FIG. 12 shows a state in which one blocking member (the holding member 2 in the above embodiment) forms the cleaning liquid non-supply portion NQ in time series, and the trajectory TRt1 in FIG. The locus of the cleaning liquid flow Q that has flowed through the cleaning surface of the substrate W at the timing of a) (immediately before the cleaning liquid flow Q to the substrate W is blocked by the blocking member (holding member 2)) is shown in FIG. The trajectory of the cleaning liquid flow Q flowing through the cleaning surface of the substrate W at the timing of c) (when the blocking of the cleaning liquid flow Q to the substrate W by the blocking member (holding member 2) is released) is shown. FIG. 13 illustrates the cleaning liquid non-supply portion NQ formed by all the blocking members (holding members 2).
[0109]
  In the case of an apparatus having such a blocking member (holding member 2), it may be cleaned in the following first cleaning mode or second cleaning mode.
[0110]
  First, as a first cleaning mode, (1) the continuous cleaning liquid flow Q passes through the rotation center WJ of the cleaning surface of the substrate W, and (2) the continuous cleaning liquid flow Q is supplied to the substrate W. After the blocking member (each holding member 2) crosses the substrate, the continuous cleaning liquid flow Q supplied to the substrate W is blocked by the blocking member (each holding member 2), so that the cleaning liquid flow Q does not flow. The cleaning surface of the substrate W is cleaned with the cleaning liquid by adjusting the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W so as to flow through the cleaning liquid non-supply portion NQ on the cleaning surface of W.
[0111]
  Since the condition satisfying (1) has already been described, the condition satisfying (2) will be described here.
[0112]
  In the case of this embodiment, as shown in FIGS. 12 and 13, each of the blocking members (holding members 2) is not formed with a cleaning liquid formed by temporarily blocking the supply of the continuous cleaning liquid flow Q to the substrate W. Each of the supply portions NQ includes a first cleaning liquid non-supply portion NQ1 formed in a region from one end of the substrate W on the supply side of the cleaning liquid flow Q to the rotation center WJ of the cleaning surface of the substrate W, and the substrate W The second cleaning liquid non-supply portion NQ2 is formed in a region between the rotation center WJ of the cleaning surface and another end of the substrate W on the discharge side of the cleaning liquid flow Q.
[0113]
  In the case shown in FIGS. 12 and 13, focusing on one blocking member (holding member 2), after the blocking member (holding member 2) crosses the continuous cleaning liquid flow Q supplied to the substrate W, first, As shown in FIG. 14, in the vicinity of the supply position IP where the cleaning liquid flow Q is supplied to the cleaning surface of the substrate W, the second portion of the cleaning liquid non-supply portion NQ formed by the blocking member (holding member 2). Since the cleaning liquid non-supply portion NQ2 passes, as shown in time series in FIG. 14, while the second cleaning liquid non-supply portion NQ2 passes near the supply position IP, another blocking member (holding member 2) is passed. The continuous cleaning liquid flow Q may be supplied to the substrate W without blocking. Next, as shown in FIG. 15, the vicinity of the discharge position OP where the cleaning liquid flow Q is discharged from the cleaning surface of the substrate W is above the cleaning liquid non-supply portion NQ formed by the blocking member (holding member 2). Since the first cleaning liquid non-supply portion NQ1 passes, the other blocking member (holding member 2) continues without being blocked while the first cleaning liquid non-supply portion NQ1 passes near the discharge position OP. A typical cleaning liquid flow Q may be supplied to the substrate W.
[0114]
  Thus, the cleaning liquid flow Q that passes through the rotation center WJ of the cleaning surface of the substrate W can flow through the cleaning liquid non-supply portion NQ (NQ1, NQ2) formed by one blocking member (holding member 2). The cleaning liquid flow Q may be caused to flow in the same manner with respect to the non-cleaning liquid supply portion NQ (NQ1, NQ2) formed by the other blocking member (holding member 2).
[0115]
  That is, in order to realize the first cleaning mode, the cleaning liquid flow Q is applied to the substrate W in consideration of the number of blocking members (holding members 2) and the arrangement positions of all the blocking members (holding members 2). While satisfying the condition of passing through the rotation center WJ of the cleaning surface and each of the first cleaning liquid non-supply portions NQ1 formed by each blocking member (holding member 2) passes near the discharge position OP, None of the blocking members (holding members 2) supply the continuous cleaning liquid flow Q to the substrate W without blocking the continuous cleaning liquid flow Q supplied to the substrate W, and each blocking member (holding member 2). Each blocking member (holding member 2) has a continuous cleaning liquid flow Q supplied to the substrate W while each of the second non-cleaning liquid supply portions NQ2 formed by the nozzle passes through the vicinity of the supply position IP. Continuous cleaning liquid flow Q without interruption The cleaning liquid flow Q that satisfies the condition to be supplied to the substrate W is adjusted to the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W that can be supplied to the substrate W during cleaning (during rotation of the substrate W), The cleaning surface of the substrate W is cleaned with a cleaning liquid.
[0116]
  According to the first cleaning mode, the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W are adjusted to one predetermined condition, and the continuous cleaning liquid flow Q is supplied to the substrate W while the substrate W is supplied. The cleaning liquid can be uniformly supplied to the cleaning surface of the substrate W by one cleaning performed by rotating the substrate.
[0117]
  Next, the second cleaning mode will be described. In the second cleaning mode, as in the above-described embodiment, the flow rate adjusting valve 9 is provided, or the rotational direction and the rotational speed of the motor 4 can be arbitrarily changed and adjusted. / And the rotation condition of the substrate is configured to be changeable. Then, the controller 10 corresponding to the cleaning control means first adjusts the supply conditions of the cleaning liquid flow Q and the rotation conditions of the substrate W so that the continuous cleaning liquid flow Q passes through the rotation center WJ of the cleaning surface of the substrate W. Then, control is performed so as to perform the first cleaning for cleaning the cleaning surface of the substrate W with the cleaning liquid. This first cleaning has already been described. Next, in the first cleaning, the controller 10 was not supplied with the cleaning liquid because the continuous cleaning liquid flow Q supplied to the cleaning surface of the substrate W was blocked by the blocking member (each holding member 2). The supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W are changed and adjusted so that the continuous cleaning liquid flow Q is supplied to the cleaning liquid non-supply portion NQ (see FIG. 13) on the cleaning surface of the substrate W. Control is performed to perform the second cleaning in which the cleaning surface of the substrate W is cleaned with the cleaning liquid.
[0118]
  Thus, by cleaning the cleaning surface of the substrate W in two stages, the cleaning liquid can be supplied uniformly to the cleaning surface of the substrate W. Even if it is difficult to adjust the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W that can realize the first cleaning mode due to the number of the blocking members and the arrangement position, the substrate W The cleaning liquid can be supplied uniformly over the entire cleaning surface for cleaning.
[0119]
  In the second cleaning mode, the cleaning liquid flow Q that flows along the cleaning surface of the substrate W at the time of the second cleaning performed later is continuous with the cleaning liquid non-supply portion NQ of the cleaning surface of the substrate W. Therefore, it is not always necessary to pass the rotation center WJ of the cleaning surface of the substrate W. For example, as shown in FIG. The second cleaning may be performed while supplying the cleaning liquid flow Q to the substrate W such that the trajectory TR passes the position deviating from the rotation center WJ of the cleaning surface of the substrate W. Accordingly, the flow rate of the cleaning liquid flow Q is changed with respect to the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W at the time of the first cleaning, and / or the rotation direction of the motor 4 is changed, or / And by changing the rotation speed of the motor 4, the trajectory TR of the optimum cleaning liquid flow Q that can supply the continuous cleaning liquid flow Q to the cleaning liquid non-supply portion NQ of the cleaning surface of the substrate W is freely set. You can choose.
[0120]
  Further, the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W during the second cleaning may be the same, or the conditions may be appropriately changed during the second cleaning. For example, the supply condition of the cleaning liquid flow Q is such that the path of the cleaning liquid flow Q during the rotation of the substrate W slides sequentially every time the substrate W is rotated at least once between TRS to TRE shown in FIG. The supply condition of the cleaning liquid flow Q is such that the cleaning liquid non-supply part NQ is divided by dividing the cleaning liquid non-supply part NQ by sequentially changing the rotation conditions of the substrate W and the like. Alternatively, the second cleaning may be performed by sequentially changing the rotation conditions of the substrate W.
[0121]
  When the cleaning of the cleaning surface of the substrate W is completed by the operation described above, the wet substrate W to which the cleaning liquid is attached is dried.
[0122]
  The drying of the substrate W is performed by switching the opening / closing valve 8 from open to closed, stopping the supply of the cleaning liquid flow Q to the substrate W, and continuing the rotation of the substrate W (substrate holding mechanism 1). The cleaning liquid adhering to W is shaken off to dry the substrate W.
[0123]
  When the drying is performed for a predetermined time and the substrate W is dried, the driving of the motor 4 is stopped, the holding of the substrate W by the substrate holding mechanism 1 (holding member 2) is released, and then the processed substrate W is the apparatus. It is carried out from. As described above, the substrate W can be carried out of the apparatus in a dry state by performing drying after cleaning with the cleaning liquid.
[0124]
  Note that the rotational speed of the motor 4 when performing the drying of the substrate W is preferably faster than the rotational speed of the motor 4 when performing cleaning of the cleaning surface of the substrate W.
[0125]
  The drying means may be configured by simply rotating the substrate W held by the substrate holding mechanism 1 (at high speed). In addition, the drying means is heated by the substrate W held by the substrate holding mechanism 1. A water vapor supply means for supplying water vapor, a vapor supply means for supplying a water-soluble alcohol vapor such as IPA (isopropyl alcohol) to the substrate W held by the substrate holding mechanism 1 may be provided. By supplying steam or water-soluble alcohol vapor heated to the substrate W in this way, the droplets adhering to the substrate W are replaced with heated water vapor or water-soluble alcohol vapor so that the substrate W can be quickly replaced. Thus, drying of the substrate W can be promoted. Note that drying may be promoted by supplying a dry gas such as nitrogen gas or heated nitrogen gas.
[0126]
  In addition, when a substrate holding mechanism 1, a supply head 6 and the like are accommodated in a chamber and cleaning and drying are performed in a processing space in the chamber as in a specific embodiment apparatus described later, the chamber The drying unit may be configured by further including an inert gas atmosphere replacing unit that replaces the atmosphere in the processing space with an inert gas atmosphere such as nitrogen gas. By performing cleaning and drying in an inert gas atmosphere, the substrate W can be processed without being exposed to oxygen, and the substrate W can be prevented from being oxidized.
[0127]
  In the above operation, the operation of cleaning and drying the substrate W has been described. However, in this embodiment, the holding member 2 can also be cleaned well.
[0128]
  That is, each holding member 2 is switched to the holding state without holding the substrate W, the cleaning liquid flow Q is supplied, and the motor 4 is driven to rotate each holding member 2 around the axis J. Each holding member 2 passes through each of the plurality of cleaning liquid streams Q one after another, and each holding member 2 can be cleaned with the cleaning liquid. At this time, since the cleaning liquid flow Q is directly supplied to each groove 2a of each holding member 2, each groove 2a of each holding member 2 in contact with the substrate W can be reliably cleaned, and the substrate W Contamination can be reliably prevented.
[0129]
  Further, after the cleaning of each holding member 2 is finished, the supply of the cleaning liquid flow Q is stopped, and the rotation of the substrate holding mechanism 1 is continued (it may be switched to high speed rotation), so that each holding member 2 The attached cleaning solution can be shaken off and dried.
[0130]
  Next, the configuration of a specific embodiment apparatus to which the present invention is applied will be described with reference to the drawings. FIG. 17 is a longitudinal sectional view of a substrate processing apparatus according to a specific embodiment of the present invention as seen from the front, and FIG. 18 is a longitudinal sectional view as seen from the side.
[0131]
  The apparatus of this embodiment is an apparatus for cleaning and drying a plurality of substantially circular substrates W at the same time, and a supply head 6 (which constitutes the substrate holding mechanism 1 and the cleaning liquid flow supply mechanism 5 in a substantially cylindrical chamber 20). A tubular member 6a provided with a discharge hole 6b, a nozzle 6c) and the like are accommodated.
[0132]
  An opening 21 for carrying in / out the substrate W is formed above the chamber 20. The opening 21 can be opened and closed by a cover 22 driven by an opening / closing mechanism (not shown).
[0133]
  A drainage exhaust port 23 for discharging and exhausting the cleaning liquid is also provided below the chamber 20.
[0134]
  In this embodiment apparatus, a part of the plurality of (five in the figure) holding members 2 constituting the substrate holding mechanism 1 is configured to be detachable from the flanges 3 and the rest. The holding member 2 </ b> B is provided at the distal end portion of the rotation arm 32 that can rotate around the rotation shaft 31. In addition, the holding member 2 </ b> A is configured to be fixed by a fixture 34 that can rotate around the rotation shaft 33. The pivot shafts 31 and 33 are rotated in synchronization by a link mechanism (not shown) so that the holding / release of each holding member 2A and the fixing / release of the holding member 2A by the fixture 34 are switched synchronously. It has become.
[0135]
  Two elevating members 40 for elevating and lowering the holding member 2A are disposed below the holding member 2A. Each elevating member 40 is moved up and down in synchronization by an air cylinder (not shown), and a plurality of substrates W supported on the holding member 2A are placed between the substrate chuck mechanism of the substrate transport mechanism (not shown) above the opening 21. The holding member 2A is moved up and down between a delivery position for delivery and a standby position shown in the drawing.
[0136]
  Each flange 3 is connected by a plurality of connecting rods 50, and the supply head 6 is disposed outside the connecting rod 50.
[0137]
  Since other configurations are the same as those in the above embodiment, common portions are denoted by the same reference numerals as in FIGS. 1 to 3 and description thereof is omitted.
[0138]
  In the embodiment apparatus having such a configuration, the cleaning and drying of the substrate W are performed in the processing space in the chamber 20 by the operation described in the embodiment shown in FIGS. In this embodiment device, in addition to the holding member 2 (2A, 2B), the connecting rod 50 is alsoContract Claims 3 and 6Therefore, in the cleaning, the first cleaning mode or the second cleaning mode is executed in consideration of the cleaning liquid non-supply portion formed by the holding members 2A and 2B and the connecting rod 50. To do.
[0139]
  In the above apparatus, a nozzle or the like for supplying heated water vapor or water-soluble alcohol vapor may be disposed in the chamber 20.
[0140]
  In the above apparatus, packing is provided on the outer peripheral portion of the opening 21, the cover 22 is configured to close the opening 21 in an airtight state, and a nozzle or the like for supplying an inert gas is provided in the chamber 20. The exhaust gas may be forcibly exhausted from the drainage outlet 23 while supplying the inert gas into the chamber 20 to replace the inside of the chamber 20 with an inert gas atmosphere.
[0141]
  In the above embodiment, the flow rate of the cleaning liquid flow Q and the rotation direction and the rotation speed of the substrate W are changeable. However, either the flow rate of the cleaning liquid flow Q, the rotation direction or the rotation speed of the substrate W is selected. Only one side may be configured to be changeable. Further, when cleaning is performed with the supply condition of the cleaning liquid flow Q and the rotation condition of the substrate W fixed to a certain condition, the apparatus may be configured by fixing the condition adjusted to the condition. Furthermore, the arrangement position of the supply head 6 and the supply direction of the cleaning liquid flow Q from the supply head 6 may be fixed, or may be configured to be changed and adjusted as appropriate.
[0142]
  In the above embodiment, the cleaning liquid flow Q continuously flows along the cleaning surface of the substrate W even after passing through the rotation center WJ of the substrate W and reaching the end of the substrate W and away from the substrate W. However, after passing through the rotation center WJ of the substrate W, it is not necessarily required to continuously flow along the cleaning surface of the substrate W. For example, after passing through the rotation center WJ of the substrate W, the cleaning liquid may not flow along the cleaning surface of the substrate W but may flow away from the cleaning surface, or may not flow continuously but scatter into fine droplets. May be.
[0143]
  However, even after passing through the rotation center WJ of the substrate W, the continuous flow along the cleaning surface of the substrate W as much as possible contributes to the cleaning of the substrate W even after the cleaning liquid flow Q passes through the rotation center WJ of the substrate W. And cleaning efficiency may be increased. Most preferably, as in the above embodiment, the cleaning liquid flow Q may flow continuously from one end of the substrate W to another end along the cleaning surface of the substrate W.
[0144]
  Further, in the above-described embodiment, the description has been given by taking as an example an apparatus for performing cleaning and drying on the substrate W. However, the present invention is not limited to this, and only cleaning or appropriate processing other than cleaning and drying is possible. The present invention can be applied to an apparatus having a function of cleaning the cleaning surface of the substrate W with a cleaning liquid.
[0145]
  Further, in the above-described embodiment, the batch type apparatus that processes a plurality of substrates W at the same time has been described as an example. However, the present invention is not limited to this, and the single wafer type apparatus that processes each substrate W is used. The present invention can also be applied to.
[0146]
  Further, in the above-described embodiment, the description has been given by taking as an example an apparatus that holds and processes the substrate W in an upright position, but the present invention is not limited to this, and an apparatus that holds and processes the substrate W in a horizontal position is also described. The present invention can be applied.
[0147]
  Furthermore, in the said Example, although demonstrated taking the example of the apparatus which hold | maintains and processes the multiple places of the peripheral part of the board | substrate W, this invention is not limited to this. For example, when only the surface of the substrate W is cleaned with a single wafer type apparatus, the surface of the substrate W is cleaned with a cleaning liquid while rotating the central portion of the back surface of the substrate W held by a vacuum suction spin chuck. The present invention can also be applied to.
[0148]
【The invention's effect】
  As is clear from the above description, claims 1 and 2 andClaim 3According to the invention described in the above, the cleaning liquid flow is configured to be cleaned while continuously flowing along the cleaning surface through the rotation center from one end of the cleaning surface of the substrate while rotating the substrate. The cleaning liquid can be reliably supplied to the entire cleaning surface of the substrate, and the entire cleaning surface of the substrate can be uniformly cleaned with the cleaning liquid. Further, compared with the conventional apparatus, the cleaning time can be shortened, the amount of the cleaning liquid used can be reduced, and the wasteful use of the cleaning liquid can be reduced.
[0149]
  Further, according to the first aspect of the present invention, a continuous cleaning liquid flow can be supplied to both the front and back surfaces of the substrate by supplying one continuous cleaning liquid flow to one substrate. Therefore, the structure of the cleaning liquid flow supply means can be simplified and the front and back surfaces of the substrate can be cleaned simultaneously.
[0150]
  According to the second aspect of the present invention, the substrate is held by the substrate holding means in the standing posture, and when the substrate held in the standing posture by the substrate holding means is in the non-rotating state, the substrate is supplied from the cleaning liquid flow supplying means to the substrate. The supply condition of the cleaning liquid flow is adjusted so that the continuous cleaning liquid flow passes on the vertical imaginary line passing through the rotation center of the cleaning surface of the substrate and above the rotation center of the cleaning surface of the substrate. Since the cleaning surface of the substrate is cleaned with the cleaning liquid by adjusting the rotation condition of the substrate according to the supply conditions, the cleaning liquid flow is applied to the hydrophilic cleaning surface substrate and the hydrophobic cleaning surface substrate. Even if cleaning is performed under the same supply conditions and substrate rotation conditions, the cleaning liquid flow trajectory can be changed so that the cleaning liquid flow always passes through the rotation center of the cleaning surface of the substrate during cleaning. Depending on the surface condition of the surface, Feeding conditions and without adjusting changing the rotation conditions of the substrate, it is possible to perform uniform cleaning.
[0151]
  Claims 3 and 6According to the invention described in the above, for example, a blocking member that temporarily blocks the supply of the cleaning liquid flow to the substrate when the substrate is rotated, such as a holding member that holds a plurality of locations on the peripheral edge of the substrate. Even with such an apparatus, the cleaning liquid can be supplied uniformly over the entire cleaning surface of the substrate, and uniform cleaning can be performed.
[0152]
  In particular,Claim 3According to the invention described above, since the cleaning is performed in two stages, the cleaning liquid can be reliably supplied to the entire cleaning surface of the substrate for cleaning. Also,Claim 6Even when it is difficult to adjust the supply conditions of the cleaning liquid flow and the rotation conditions of the substrate that can realize the invention described in (1), the cleaning liquid can be supplied uniformly over the entire cleaning surface of the substrate for cleaning.
[0153]
  Also,Claim 6According to the invention described in (1), the cleaning liquid flow supply condition and the substrate rotation condition are adjusted to a predetermined one condition, and a continuous cleaning liquid is supplied to the substrate while rotating the substrate. Since the cleaning liquid is uniformly supplied to the cleaning surface of the substrate by cleaning,Claim 3The cleaning time can be shortened as compared with the two-stage cleaning as in the invention described in the above.
[0154]
  Claim 4According to the invention described above, the substrate holding unit is configured to hold a plurality of substrates, and the cleaning liquid flow supply unit is configured to provide a continuous cleaning liquid flow for each cleaning surface of each substrate held by the substrate holding unit. In addition to being able to perform cleaning on a plurality of substrates at the same time, the cleaning surface of each substrate can be uniformly cleaned, and cleaning between the cleaning surfaces of each substrate is also possible. It can be made uniform.
[0155]
  Claim 5According to the invention described above, since the continuous cleaning liquid flow is supplied individually for each cleaning surface of the substrate, the cleaning liquid flow supplied for each cleaning surface of the substrate can be accurately adjusted. Further, as in the first aspect of the invention, since the continuous cleaning liquid flow is not applied to the edge of the substrate, it is possible to suppress the cleaning liquid from scattering from the edge of the substrate to the surroundings.
[0156]
  Claim 7According to the invention described in (2), since the drying means for drying the substrate is further provided, after the cleaning of the cleaning surface of the substrate is finished, the wet substrate to which the cleaning liquid is attached can be dried by the drying means. The processed substrate can be unloaded from the apparatus in a dry state.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing a configuration of main parts of a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a plan view of the embodiment device.
FIG. 3 is a cross-sectional view showing a configuration of a holding member.
FIG. 4 is a plan view showing a schematic configuration of a modified example of the cleaning liquid flow supply mechanism.
FIG. 5 is a longitudinal sectional view showing a supply form of a cleaning liquid flow.
FIG. 6 is a block diagram showing a configuration of a control system of the embodiment apparatus.
FIG. 7 is a diagram illustrating an example of a relationship between a trajectory of a cleaning liquid flow when the substrate is not rotated, a rotation direction of the substrate, and a changing direction of the trajectory of the cleaning liquid flow accompanying the rotation of the substrate.
FIG. 8 is a diagram showing another example of the relationship between the trajectory of the cleaning liquid flow during non-rotation, the rotation direction of the substrate, and the change direction of the trajectory of the cleaning liquid flow accompanying the rotation.
FIG. 9 is a diagram showing still another example of the relationship between the trajectory of the cleaning liquid flow during non-rotation, the rotation direction of the substrate, and the changing direction of the trajectory of the cleaning liquid flow accompanying the rotation.
FIG. 10 is a diagram for explaining a cleaning liquid flow trajectory during non-rotation in accordance with a surface state of a cleaning surface of a substrate and a change amount of the cleaning liquid flow trajectory accompanying rotation.
FIG. 11 is a diagram for explaining a cleaning liquid flow trajectory during non-rotation when the degree of hydrophilicity of the cleaning surface of the substrate is different and a change amount of the cleaning liquid flow trajectory accompanying rotation.
FIG. 12 is a diagram showing, in time series, a state where one blocking member forms a cleaning liquid non-supply portion.
FIG. 13 is a view showing a cleaning liquid non-supply portion formed by all the blocking members.
FIG. 14 is a diagram for explaining a first cleaning mode.
FIG. 15 is also a diagram for explaining a first cleaning mode.
FIG. 16 is a diagram for explaining a second cleaning mode.
FIG. 17 is a longitudinal sectional view of a substrate processing apparatus according to a specific embodiment of the present invention as seen from the front.
18 is a longitudinal sectional view of the embodiment apparatus of FIG. 17 as viewed from the side.
FIG. 19 is a front view and a side view showing a schematic configuration of a conventional apparatus.
[Explanation of symbols]
  1: Board holding mechanism
  2: Holding member
  4: Motor
  5: Cleaning liquid flow supply mechanism
  10: Controller
  W: Substrate
  WC: The center of the cleaning surface of the substrate
  WJ: Center of rotation of the substrate
  Q: Continuous cleaning liquid flow
  VL: vertical imaginary line
  NQ (NQ1, NQ2): Cleaning liquid not supplied part

Claims (7)

A substrate processing apparatus having a function of cleaning a cleaning surface of a substrate with a cleaning liquid,
Substrate holding means for holding the substrate;
Rotating means for rotating the substrate holding means;
Cleaning liquid flow supply means for supplying a continuous cleaning liquid flow to the substrate so as to form a continuous cleaning liquid flow from the edge of the substrate along the cleaning surface of the substrate;
With
While supplying the continuous cleaning liquid flow from the cleaning liquid flow supply means to the substrate held by the substrate holding means, the substrate holding means holding the substrate is rotated. At this time, the continuous cleaning liquid flow is transferred to the substrate. The cleaning surface of the substrate is configured to be cleaned with the cleaning liquid, passing through the center of rotation of the cleaning surface.
In addition, one continuous cleaning liquid flow supplied from the cleaning liquid flow supply unit to the substrate held by the substrate holding unit is distributed to the front surface and the back surface of the substrate at the edge of the substrate. The substrate processing apparatus, wherein the continuous cleaning liquid flow is supplied to the substrate so as to form a continuous cleaning liquid flow from the edge of the substrate along the cleaning surface of the substrate. A substrate processing apparatus having a function of cleaning a cleaning surface of a substrate with a cleaning liquid,
Substrate holding means for holding the substrate in an upright position;
Rotating means for rotating the substrate holding means;
Cleaning liquid flow supply means for supplying a continuous cleaning liquid flow to the substrate so as to form a continuous cleaning liquid flow from the edge of the substrate along the cleaning surface of the substrate;
Cleaning control means for driving and controlling the rotating means to adjust the rotation condition of the substrate, adjusting and controlling the cleaning liquid flow supplying means to adjust the supply condition of the cleaning liquid flow;
With
The cleaning control means includes
The continuous cleaning liquid flow supplied to the substrate from the cleaning liquid flow supplying means rotates the cleaning surface of the substrate when the rotating means is stopped and the substrate held in the standing posture by the substrate holding means is in a non-rotating state. The position that passes vertically above the center is closer to the rotation center of the cleaning surface of the substrate as the degree of hydrophilicity of the cleaning surface of the substrate is larger, and the cleaning surface of the substrate is higher as the degree of hydrophobicity of the cleaning surface of the substrate is larger. While adjusting the supply conditions of the cleaning liquid flow so that it is far from the center of rotation ,
By adjusting the rotation condition of the substrate according to the supply condition of the cleaning liquid flow, when the substrate is rotated by rotating the rotating means, the cleaning liquid flow passes through the rotation center of the cleaning surface of the substrate, A substrate processing apparatus for cleaning a cleaning surface of a substrate with a cleaning liquid. A substrate processing apparatus having a function of cleaning a cleaning surface of a substrate with a cleaning liquid,
Substrate holding means for holding the substrate;
Rotating means for rotating the substrate holding means;
Cleaning liquid flow supply means for supplying a continuous cleaning liquid flow to the substrate so as to form a continuous cleaning liquid flow from the edge of the substrate along the cleaning surface of the substrate;
Cleaning control means for driving and controlling the rotating means to adjust the rotation condition of the substrate, adjusting and controlling the cleaning liquid flow supplying means to adjust the supply condition of the cleaning liquid flow;
With
The cleaning control means includes
During the rotation of the substrate, the supply of the continuous cleaning liquid flow to the substrate is temporarily interrupted across the continuous cleaning liquid flow supplied from the cleaning liquid flow supplying means to the substrate held by the substrate holding means. When having a blocking member,
First, the continuous cleaning liquid flow passes through the center of rotation of the cleaning surface of the substrate, and first cleaning is performed to clean the cleaning surface of the substrate with the cleaning liquid. Next, in the first cleaning, the cleaning of the substrate is performed. The cleaning liquid flow is performed such that the continuous cleaning liquid flow flows to a portion where the cleaning liquid is not supplied on the cleaning surface of the substrate that has not flown because the continuous cleaning liquid flow supplied to the surface is blocked by the blocking member. The substrate processing apparatus is characterized in that the second cleaning for cleaning the cleaning surface of the substrate with the cleaning liquid is controlled by changing and adjusting the supply condition and / or the rotation condition of the substrate. The substrate processing apparatus according to any one of claims 1 to 3 ,
The substrate holding means is configured to hold a plurality of substrates,
The substrate processing apparatus, wherein the cleaning liquid flow supply means is configured to supply the continuous cleaning liquid flow for each cleaning surface of each substrate held by the substrate holding means. In the substrate processing apparatus of Claim 2 or 3 ,
One continuous cleaning liquid flow supplied from the cleaning liquid flow supplying means to the substrate held by the substrate holding means is applied to only one cleaning surface of the substrate, from the edge of the substrate to the cleaning surface of the substrate. A substrate processing apparatus for supplying a continuous cleaning liquid flow to the substrate so as to form a continuous flowing cleaning liquid flow along the substrate. The substrate processing apparatus according to claim 1 or 2 ,
During the rotation of the substrate, the supply of the continuous cleaning liquid flow to the substrate is temporarily interrupted across the continuous cleaning liquid flow supplied from the cleaning liquid flow supplying means to the substrate held by the substrate holding means. When having a blocking member,
After the blocking member crosses the continuous cleaning liquid flow supplied to the substrate, the continuous cleaning liquid flow supplied to the substrate is blocked by the blocking member, so that the cleaning liquid flow does not flow. A substrate processing apparatus, wherein a cleaning surface of a substrate is cleaned with a cleaning liquid so as to flow through a cleaning liquid unsupplied portion of the cleaning surface. The substrate processing apparatus according to claim 1 ,
A substrate processing apparatus, further comprising drying means for drying the substrate.

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